CN206211954U - 9 ~ 10GHz high power solid state amplifier blocks - Google Patents
9 ~ 10GHz high power solid state amplifier blocks Download PDFInfo
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- CN206211954U CN206211954U CN201621332438.0U CN201621332438U CN206211954U CN 206211954 U CN206211954 U CN 206211954U CN 201621332438 U CN201621332438 U CN 201621332438U CN 206211954 U CN206211954 U CN 206211954U
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Abstract
The utility model discloses one kind 9 ~ 10GHz high power solid state amplifier blocks, including pre-amplifier, power divider, six final amplifiers and power module；The input of the pre-amplifier is used to connect the radiofrequency signal of input, the output end connection power divider of pre-amplifier, the power divider is provided with six tunnel output ends, it is connected with six final amplifiers respectively, each final amplifier is provided with six tunnel output ends and is exported respectively to pre-amplifier, power divider and final amplifier for providing operating voltage for exporting radiofrequency signal, the power module.The utility model solid-state amplifier component operation pulsewidth is 0.1us~250us, 36 tunnels export, single port output pulse power compares 12% more than 100 watts, maximum functional, with the good linearity.Circuit board arrangement layout uses modularized design, while weight and volume is reduced, is conducive to producing by batch and backs up at random.
Description
Technical field
The utility model is related to solid-state amplifier technical field, and in particular to one kind 9 ~ 10GHz high power solid state amplifiers
Component.
Background technology
At present, be to obtain thousands of watts of even tens kilowatts of power outputs for solid-state amplifier emitter, generally I
Using power combing method, specific method has two kinds：One is using the power synthetic technique based on circuit or waveguide, second
The method of kind is, using the method for Active Arrays, free-space power synthetic technology to be namely based on, by using spatial power
Synthesis, obtains high-power output.Second relative to the first technology due to without synthesis network loss, combined coefficient compared with
Height, is the effective way for producing great-power electromagnetic wave radiation, is widely used.Solid-state power amplifier component is used as having
The important component of source array antenna, is also increasingly taken seriously.For a long time, X-band solid-state amplifier is due to partly leading the country
Body technology technology falls behind and foreign technology block relatively, and its development is relatively delayed.For requiring tens watts of power output extremely
The system of hectowatt, hundreds of delicate to several milliseconds of signal pulsewidth, is even more difficult to.
Utility model content
The purpose of this utility model is to overcome deficiency of the prior art, there is provided one kind 9 ~ 10GHz high power solid states
Amplifier, work pulsewidth is that 0.1us~250us, single port output pulse power compare 12% more than 100 watts, maximum functional, good
The linearity, it is small volume, lightweight.
In order to solve the above technical problems, the utility model provides one kind 9 ~ 10GHz high power solid state amplifier blocks, its
It is characterized in, including pre-amplifier, power divider, six final amplifiers and power module；
The input of the pre-amplifier is used to connect the radiofrequency signal of input, the output end connection work(of pre-amplifier
Rate distributor, the power divider is provided with six tunnel output ends, is connected with six final amplifiers respectively, and each final stage is amplified
Device is provided with six tunnel output ends and is exported respectively to prime for providing operating voltage for exporting radiofrequency signal, the power module
Amplifier, power divider and final amplifier；
The final amplifier includes amplifier unit, the energy capacitance set being connected with amplifier unit respectively and final stage work(
Feed element is put, the amplifier unit includes 30 watts of amplifiers of X-band, 100 watts of amplifiers of several X-bands, the tunnels of Pei Xiang bis-
Power splitter and the road power splitters of Pei Xiang tri-, output end connection 100 watts of amplifiers of the first X-band of 30 watts of amplifiers of X-band, an X
The output end of 100 watts of amplifiers of wave band connects the input of the road power splitters of Pei Xiang bis-, the two-way output end of the road power splitters of Pei Xiang bis-
100 watts of amplifiers of the second X-band are connected respectively, and the tunnels of Pei Xiang tri- are connected respectively per road 100 watts of output ends of amplifier of the second X-band
The input of power splitter, three tunnel output ends of each road power splitter of Pei Xiang tri- connect 100 watts of amplifiers of the 3rd X-band, six respectively
The output end of the 100 watts of amplifiers of X-band of road the 3rd is connected with isolator.
Further, the power output of pre-amplifier is more than 100 watts, each output port output work of final amplifier
Rate is more than 100 watts.
Further, the power module includes converting power source unit and timing control unit, the converting power source list
The output end of unit connects pre-amplifier, power divider and final amplifier, for providing work malleation and negative pressure, when described
Sequence control unit connects converting power source unit, and control converting power source unit provides the sequential of malleation and negative pressure.
Further, the power module also includes negative pressure protection circuit, and negative pressure protection circuit includes that triode Q2, field are imitated
Should pipe Q1, time delay resistance R1, R2, R2 and delay capacitor C1, the output end of power module leads up to gate bias circuit connection
The grid VG of gallium nitride power pipe, separately leads up to the emitter stage of voltage-regulator diode D1 connecting triodes Q2, the base of triode Q2
It is grounded after pole series resistance R1；The grid of FET Q1, scene effect are connected after the collector series resistance R3 of triode Q2
Resistance R2 and electric capacity C1 is parallel between the grid and source electrode of pipe Q1, the drain electrode of FET Q1 is connected by drain bias circuit
The drain electrode VD of gallium nitride power pipe.
Further, the power module also includes temperature-compensation circuit, and the temperature-compensation circuit includes transport and placing device
The positive power source terminal connection connection reference voltage Vref of LM158, transport and placing device LM158, negative power end connects the output end of power module,
Reverse inter-input-ing ending grounding, serial adjustable resistance after first thermistor R3 and resistance R2 in parallel between positive input and output end
Be connected to reference voltage Vref after Rpot, resistance R2 one end series resistance R1, the output end series resistance Rg of transport and placing device LM158 it
The grid VG of gallium nitride power pipe is connected to afterwards.
Further, also including current foldback circuit, the current foldback circuit includes current sense amplifier and electric current
Detection resistance constitutes the circuit of monitoring current.
Further, also including cooling system, the cooling system includes eight blower fans and six cold drawing fin.
Compared with prior art, the beneficial effect that the utility model is reached is：The utility model solid-state amplifier component
Work pulsewidth is that 0.1us~250us, single port output pulse power compare 12% more than 100 watts, maximum functional, with good linear
Degree.Circuit board arrangement layout uses modularized design, while weight and volume is reduced, is conducive to producing by batch and random standby
Part；Can adapt to wide temperature range（- 40~+65 DEG C）, normal work under the harsh environments such as strong vibration.On whole circuit
Negative pressure protection circuit, temperature-compensation circuit and current foldback circuit are provided with, reliability is improve, the power consumption of system is reduced, carried
Security of system high.
Brief description of the drawings
Fig. 1 is the principle schematic of high power solid state amplifier block；
Fig. 2 is the front of high power solid state amplifier block circuit board；
Fig. 3 is the back side of high power solid state amplifier block circuit board；
Fig. 4 is the principle schematic of final amplifier；
Fig. 5 is the schematic diagram of under-voltage protecting circuit；
Fig. 6 is the schematic diagram of temperature-compensation circuit；
Fig. 7 is the schematic diagram of current foldback circuit.
Reference：1st, cooling system；2nd, final amplifier；3rd, power divider.
Specific embodiment
The utility model is further described below in conjunction with the accompanying drawings.Following examples are only used for clearly illustrating this
The technical scheme of utility model, and protection domain of the present utility model can not be limited with this.
A kind of 9 ~ 10GHz high power solid states amplifier block of the present utility model, as shown in figure 1, including pre-amplifier,
Power divider 3, six final amplifiers 2 and power modules；The input of pre-amplifier is used to connect the radio frequency letter of input
Number, the output end connection power divider of pre-amplifier, power divider 3 is provided with six tunnel output ends, respectively with six ends
Level amplifier 2 is connected, and each final amplifier 6 is provided with six tunnel output ends for exporting radiofrequency signal.
Radiofrequency signal is input into from the input of pre-amplifier, and pre-amplifier power output is more than 100 watts, by power
Distributor 3 is divided into six tunnels and goes to drive six final amplifiers 2, and six final amplifier totally 36 road ports outputs are defeated per road port
Go out peak power more than 100 watts.
The schematic diagram of final amplifier 2 is as shown in figure 4, the storage being connected with amplifier unit including amplifier unit, respectively
Energy capacitance group and final stage power amplifier feed element, the amplifier unit include 30 watts of amplifiers of X-band, 100 watts of several X-bands
Amplifier, the road power splitters of Pei Xiang bis- and two road power splitters of Pei Xiang tri-, the output end of 30 watts of amplifiers of X-band connect an X ripples
100 watts of amplifiers of section, the output end of the first 100 watts of X-band amplifier connects the input of the road power splitters of Pei Xiang bis-, the tunnels of Pei Xiang bis-
The two-way output end of power splitter connects 100 watts of amplifiers of the second X-band respectively, per road 100 watts of outputs of amplifier of the second X-band
End connects the input of the road power splitters of Pei Xiang tri- respectively, and three tunnel output ends of each road power splitter of Pei Xiang tri- connect the 3rd X respectively
100 watts of amplifiers of wave band, the output end of six tunnel the 3rd, 100 watts of amplifiers of X-band is connected with isolator.
It is input into from the input of 30 watts of amplifiers of X-band from the radiofrequency signal of power divider output, then through the first X-band
100 watts of amplifiers carry out power amplification, drive 100 watts of amplifiers of the second X-band of two-way respectively by the road power splitters of Pei Xiang bis-, often
100 watts of output ends of amplifier of the second X-band of road drive 100 watts of the 3rd X-band of three tunnels to put respectively by the road power splitters of Pei Xiang tri-
Big device, radiofrequency signal is exported per the output end of the 100 watts of amplifiers of X-band of road the 3rd after isolator.Each final amplifier 2 has
Six tunnel output ends, per road port, output peak power is more than 100 watts.
On the circuit board of final amplifier 2, energy capacitance set abuts 100 watts of amplifiers of X-band, shortens feed line length,
Otherwise drain voltage waveform occurs larger top drop, in topology layout time-division upper and lower two-layer, will the placement of DC feedback part
At the back side of circuit board, 100 watts of amplifier circuits of X-band are placed on circuit board front.
Power module is exported to pre-amplifier, power divider and final amplifier respectively for providing operating voltage.
Power module includes converting power source unit and timing control unit, and the output end connection prime of the converting power source unit is amplified
Device, power divider and final amplifier, for providing work malleation and negative pressure, the timing control unit connects converting power source
Unit, control converting power source unit provides the sequential of malleation and negative pressure, in input positive voltage after as each amplifier input negative pressure
Powering order.
Traditional sequence of power switching has timing device time delay, circuit delay.Respectively put in the utility model solid-state amplifier component
Big device element uses gallium nitride power pipe（GaN）, the working characteristics of gallium nitride power pipe is, during power-up, negative pressure must first add, leakage
Add after pole tension, the method opened using vacuum cavitations drain voltage in the application controls sequence of power switching.Therefore power module is also
Including negative pressure protection circuit.The negative pressure protection circuit connects converting power source unit, for providing negative pressure for converting power source unit
Protection.When negative pressure protection circuit ensures that each amplifier adds negative electricity sequential, it is ensured that in the case of negative grid extreme pressure drain voltage shut-off and
10 milliseconds of time delay.Circuit diagram is as shown in figure 5, the output end of power module leads up to gate bias circuit connection gallium nitride power
The grid of pipe, separately leads up to the emitter stage of voltage-regulator diode D1 connecting triodes Q2, the base series resistor R1 of triode Q2
After be grounded；Connect the grid of FET Q1 after the collector series resistance R3 of triode Q2, the grid of scene effect pipe Q1 and
Resistance R2 and electric capacity C1 is parallel between source electrode, the drain electrode of FET Q1 connects gallium nitride power pipe by drain bias circuit
Drain electrode.
Used as delay capacitor, as time delay resistance, Q1 is opened wherein electric capacity C1 for P-channel field-effect transistor (PEFT) pipe for resistance R1, R2, R3
Close, Q2 is NPN triode.The course of work is that -8V the power supplys that power module is provided first pass through gate bias circuit and are added to gallium nitride
Power tube grid（VG）, then by voltage-regulator diode D1（1N4728）, NPN triode Q2 (2N2222a), time delay resistance R1,
R2 and R3, delay capacitor C1（Optionally use 1 μ F ~ 10uF）, FET Q1 is opened, malleation（+10V~+50V）Add to nitrogen
Change the drain electrode of gallium power tube（VD）.About 10 milliseconds of VG and VD time delays.
During the circuit is using all gallium nitride power device feed circuits in assembly, such as final stage power amplifier in final amplifier
On feeder panel.
Further, in order to ensure amplifier in each unit circuit（Gallium nitride power pipe）In -40 DEG C~+65 DEG C temperature wide
Under the conditions of stabilization operating point, i.e., static working current stabilization under -40 DEG C~+65 DEG C temperature conditionss wide, power module also includes
Temperature-compensation circuit, it is ensured that the utility model amplifier block can smoothly start under cryogenic, work is controlled under high-temperature condition
Making point can not be too high.Its circuit is as shown in Figure 6.Including transport and placing device LM158, the positive power source terminal connection connection ginseng of transport and placing device LM158
Voltage Vref is examined, negative power end connects the output end of power module, reverse inter-input-ing ending grounding, between positive input and output end
First serial adjustable resistance Rpot after parallel connection thermistor R3 and resistance R2, is connected to reference to electricity after resistance R2 one end series resistance R1
Pressure Vref, is connected to the grid of gallium nitride power pipe after the output end series resistance Rg of transport and placing device LM158（VG）.By temperature-sensitive
The sensitive time of resistance versus temperature adjusts the ratio of amplifier, so that power module is exported to grid voltage VG can normally start nitrogen
Change gallium power tube.
During the circuit is using all gallium nitride power device feed circuits in assembly, such as final stage power amplifier in final amplifier
On feeder panel.
Power amplifier component total system peak power is more than 3630 watts, the nearly 130A of peak point current in the present embodiment.Electricity
If there is overcurrent-overvoltage, power tube will be burned out within the extremely short time in source；Because amplifier is by grid negative voltage
The high current of drain electrode is controlled, it is desirable to which negative voltage was loaded on amplifier before positive voltage, to control the work electricity of amplifier
In rated range, otherwise, the electric current being loaded on amplifier is uncontrolled, causes electric current excessive for stream.Therefore, in the present embodiment
Also include current foldback circuit, the current foldback circuit connects pre-amplifier and final amplifier.Current foldback circuit is adopted
The electric current at collection amplifier end, when current is excessive, cuts off the electricity supply in time, it is ensured that in the case of in maloperation or because of high current failure and
When turn off drain voltage, guard amplifier is not damaged, and it is musec order to turn off corresponding time.The mistake flow point of current foldback circuit sets
Put according to the maximum diffipation power of each amplifier and combination radiating condition setting, and will set delay circuit at excessively stream sampling,
Prevent the dash current causing trouble of booting moment from reporting by mistake.
Overcurrent protection Main Function is when current anomaly occurs in any one amplifier module in component, that is, to work as appearance
Short circuit or excessively work are more excessive than causing operating current, and circuit turns off module for power supply in time, and its general principle is as shown in Figure 7.Electricity
Stream detection amplifier and current sense resistor constitute the circuit of timely monitor electric current, when electric current exceedes risk range in circuit,
By comparing amplifying circuit, fet switch is turned off, cut off circuit supply voltage.
Further, also including cooling system 1, the cooling system 1 includes eight blower fans and six cold drawing fin, energy
It is enough to distribute nearly 310 watts in solid-state amplifier component of heat in time, and ensure power amplifier stabilization under+65 DEG C of hot conditions
Work.
On the circuit board of solid-state amplifier component, its front elevation is as shown in figure 3, its back view is as shown in figure 4, in structure
Layout aspect, using modular design, while weight and volume is reduced, is conducive to producing by batch and backs up at random, end
Level amplifier 2 and power divider 3 are arranged on the front of circuit board, and six final amplifiers are separately positioned in the middle of circuit board,
It is arranged in order from top to bottom, eight blower fans are respectively provided with the corner of circuit board in cooling system 1, per each corner, superposition sets two
Blower fan, six cold drawing fin are separately positioned on the back side of final amplifier circuit board.
The utility model can adapt to wide temperature range using solid-state amplifier active array form（- 40~+65 DEG C）, it is strong
Normal work under the harsh environments such as vibration.This solid-state amplifier component operation pulsewidth is 0.1us~250us, single port output
Pulse power compares 12% more than 100 watts, maximum functional, with the good linearity.Negative pressure protection electricity is provided with whole circuit
Road, temperature-compensation circuit and current foldback circuit, improve reliability, reduce the power consumption of system, improve security of system.
The above is only preferred embodiment of the present utility model, it is noted that for the common skill of the art
For art personnel, on the premise of the utility model know-why is not departed from, some improvement and modification can also be made, these change
Enter and protection domain of the present utility model is also should be regarded as with modification.
Claims (7)
1. 9 ~ 10GHz of one kind high power solid states amplifier block, it is characterized in that, including pre-amplifier, power divider, six
Final amplifier and power module；
The input of the pre-amplifier is used to connect the radiofrequency signal of input, the output end connection power point of pre-amplifier
Orchestration, the power divider is provided with six tunnel output ends, is connected with six final amplifiers respectively, and each final amplifier sets
Be equipped with six tunnel output ends is used to provide operating voltage and export respectively to prime to amplify for exporting radiofrequency signal, the power module
Device, power divider and final amplifier；
The final amplifier includes amplifier unit, the energy capacitance set being connected with amplifier unit respectively and final stage power amplifier feedback
Electric unit, the amplifier unit includes 30 watts of amplifiers of X-band, 100 watts of amplifiers of several X-bands, the road work(of Pei Xiang bis- point
Device and the road power splitters of Pei Xiang tri-, output end connection 100 watts of amplifiers of the first X-band of 30 watts of amplifiers of X-band, the first X-band
100 watts of output ends of amplifier connect the input of the road power splitters of Pei Xiang bis-, the two-way output end difference of the road power splitters of Pei Xiang bis-
100 watts of amplifiers of the second X-band are connected, the road work(of Pei Xiang tri- point is connected respectively per road 100 watts of output ends of amplifier of the second X-band
The input of device, three tunnel output ends of each road power splitter of Pei Xiang tri- connect 100 watts of amplifiers of the 3rd X-band, six tunnels respectively
The output end of three 100 watts of amplifiers of X-band is connected with isolator.
2. 9 ~ 10GHz high power solid states amplifier block according to claim 1, it is characterized in that, pre-amplifier it is defeated
Go out power more than 100 watts, each output port power output of final amplifier is more than 100 watts.
3. 9 ~ 10GHz high power solid states amplifier block according to claim 1, it is characterized in that, in the power module
Including converting power source unit and timing control unit, the output end connection pre-amplifier of the converting power source unit, power point
Orchestration and final amplifier, for providing work malleation and negative pressure, the timing control unit connects converting power source unit, control
Converting power source unit provides the sequential of malleation and negative pressure.
4. 9 ~ 10GHz high power solid states amplifier block according to claim 3, it is characterized in that, the power module is also
Including negative pressure protection circuit, negative pressure protection circuit includes triode Q2, FET Q1, time delay resistance R1, R2, R2 and time delay electricity
Hold C1, the output end of power module leads up to the grid VG that gate bias circuit connects gallium nitride power pipe, separately leads up to
The emitter stage of voltage-regulator diode D1 connecting triodes Q2, is grounded after the base series resistor R1 of triode Q2；The collection of triode Q2
The grid of FET Q1 is connected after Electrode Series Resistance R3, resistance R2 is parallel between the grid and source electrode of scene effect pipe Q1
With electric capacity C1, the drain electrode VD drained by drain bias circuit connection gallium nitride power pipe of FET Q1.
5. 9 ~ 10GHz high power solid states amplifier block according to claim 4, it is characterized in that, the power module is also
Including temperature-compensation circuit, the temperature-compensation circuit includes transport and placing device LM158, and the positive power source terminal connection of transport and placing device LM158 connects
Reference voltage Vref is connect, negative power end connects the output end of power module, reverse inter-input-ing ending grounding, positive input and output end
Between first serial adjustable hinders Rpot after parallel connection thermistor R3 and resistance R2, be connected to ginseng after resistance R2 one end series resistance R1
Voltage Vref is examined, the grid VG of gallium nitride power pipe is connected to after the output end series resistance Rg of transport and placing device LM158.
6. 9 ~ 10GHz high power solid states amplifier block according to claim 1, it is characterized in that, also wrapped in power module
Current foldback circuit is included, the current foldback circuit includes that current sense amplifier and current sense resistor constitute monitoring current
Circuit.
7. 9 ~ 10GHz high power solid states amplifier block according to claim 1, it is characterized in that, also including cooling system,
The cooling system includes eight blower fans and six cold drawing fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621332438.0U CN206211954U (en) | 2016-12-06 | 2016-12-06 | 9 ~ 10GHz high power solid state amplifier blocks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621332438.0U CN206211954U (en) | 2016-12-06 | 2016-12-06 | 9 ~ 10GHz high power solid state amplifier blocks |
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| Publication Number | Publication Date |
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| CN206211954U true CN206211954U (en) | 2017-05-31 |
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ID=58751629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201621332438.0U Active CN206211954U (en) | 2016-12-06 | 2016-12-06 | 9 ~ 10GHz high power solid state amplifier blocks |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911087A (en) * | 2017-12-07 | 2018-04-13 | 南京长峰航天电子科技有限公司 | A kind of UHF waveband high power solid state amplifier block |
| CN108923761A (en) * | 2018-07-06 | 2018-11-30 | 中国电子科技集团公司第十三研究所 | A kind of power amplifier that operating mode is changeable |
| CN110460343A (en) * | 2019-08-21 | 2019-11-15 | 中国电子科技集团公司第二十九研究所 | A kind of dualbeam emitting module |
| EP3826173A4 (en) * | 2018-07-19 | 2021-08-25 | ZTE Corporation | Power supply apparatus and method for power amplifier |
| WO2022172074A1 (en) * | 2021-02-09 | 2022-08-18 | Станислав ЗАВЬЯЛОВ | Continuous x-band power amplifier "r-2tn-ur" |
-
2016
- 2016-12-06 CN CN201621332438.0U patent/CN206211954U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911087A (en) * | 2017-12-07 | 2018-04-13 | 南京长峰航天电子科技有限公司 | A kind of UHF waveband high power solid state amplifier block |
| CN108923761A (en) * | 2018-07-06 | 2018-11-30 | 中国电子科技集团公司第十三研究所 | A kind of power amplifier that operating mode is changeable |
| EP3826173A4 (en) * | 2018-07-19 | 2021-08-25 | ZTE Corporation | Power supply apparatus and method for power amplifier |
| CN110460343A (en) * | 2019-08-21 | 2019-11-15 | 中国电子科技集团公司第二十九研究所 | A kind of dualbeam emitting module |
| CN110460343B (en) * | 2019-08-21 | 2020-11-10 | 中国电子科技集团公司第二十九研究所 | Dual-beam transmitting assembly |
| WO2022172074A1 (en) * | 2021-02-09 | 2022-08-18 | Станислав ЗАВЬЯЛОВ | Continuous x-band power amplifier "r-2tn-ur" |
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