CN206211880U - A kind of semiconductor power generation device - Google Patents
A kind of semiconductor power generation device Download PDFInfo
- Publication number
- CN206211880U CN206211880U CN201621226532.8U CN201621226532U CN206211880U CN 206211880 U CN206211880 U CN 206211880U CN 201621226532 U CN201621226532 U CN 201621226532U CN 206211880 U CN206211880 U CN 206211880U
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- electric capacity
- resistance
- controllable silicon
- semiconductor power
- rectifier
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Abstract
The utility model discloses a kind of semiconductor power generation device, by first resistor to the 4th resistance, first electric capacity, second electric capacity, semiconductor power-generating chip, potentiometer, voltage-stabiliser tube, diode, controllable silicon and rectifier are constituted, the electric current produced by semiconductor power-generating chip is through first resistor current limliting, potentiometer adjusts the size of output current, through voltage-stabiliser tube voltage stabilizing, firing point of the output higher than controllable silicon after the preliminary rectification of diode, controlled silicon conducting, electric current is through second resistance, controllable silicon, 4th resistance passes through, exported to rectifier rectification after the first electric capacity tentatively filtering, the electric current of rectifier output is exported after the second electric capacity secondary filtering.If the conducting electric current of the electric current less than controllable silicon of semiconductor power-generating chip output; when being not enough to triggering controlled silicon conducting; then controllable silicon is closed; play a part of protection circuit; the characteristics of with voltage stabilizing, regulation output, circuit protection; circuit structure is simple, component is few, with low cost, with the value promoted the use of.
Description
Technical field
The utility model is related to a kind of semiconductor generating servicing unit, more particularly to a kind of semiconductor power generation device.
Background technology
Semiconductor thermoelectric generation technology, its operation principle is to set a temperature at two pieces of semiconductor two ends of different nature
Difference, then just generates DC voltage on the semiconductor.Semiconductor thermoelectric generates electricity noiselessness, long lifespan, stable performance etc.
Feature.Can rapidly start in subzero 40 degrees Celsius of cold environment, therefore be increasingly widely applied in practice.But
It is affected by the ambient temperature under some environment, the output of electric current can be caused unstable, accordingly, there exist room for improvement.
Utility model content
The purpose of this utility model is that and a kind of semiconductor power generation device is provided to solve the above problems.
The utility model is achieved through the following technical solutions above-mentioned purpose：
The utility model is by first resistor to the 4th resistance, the first electric capacity, the second electric capacity, semiconductor power-generating chip, current potential
Device, voltage-stabiliser tube, diode, controllable silicon and rectifier composition, first resistor R1 are that 100 Ω, second resistance R2 are 2k Ω, the 3rd electricity
Resistance R3 is that 500 Ω, the 4th resistance R4 are that 400 Ω, the first electric capacity C1 are that 300uf, the second electric capacity C2 are 470uf, semiconductor generating
Chip Type B number be TEC1-06305, potentiometer RP be 10k Ω, voltage-stabiliser tube DW models 2CW1, diode D models IN4001,
Controllable silicon SCR model KP1-2, rectifier DR are four bridge rectifiers of the diode composition of model IN4001.
Specifically, the first end of the semiconductor power-generating chip is connected with the first end of the first resistor, described partly to lead
Second end of body power-generating chip is connected with the first input end of the rectifier, the second end and the current potential of the first resistor
The first end connection of device, the second end of the potentiometer is connected with the first end of the second resistance, and the of the second resistance
Two ends are connected with the negative pole of the controllable silicon, and the sliding end of the potentiometer is connected with the negative pole of the voltage-stabiliser tube, the voltage stabilizing
The positive pole of pipe is connected with the positive pole of the diode, and the negative pole of the diode is connected with the control end of the controllable silicon, described
The positive pole of controllable silicon is connected with the first end of the 4th resistance, the second end of the 4th resistance simultaneously with first electric capacity
First end and the 3rd resistor first end connection, the second end of the 3rd resistor is simultaneously with the of first electric capacity
The second input connection of two ends and the rectifier, after the positive pole of the rectifier is connected with the first end of second electric capacity
Used as cathode output end, the cathode output end of the rectifier is exported after being connected with the second end of second electric capacity as negative pole
End.
The beneficial effects of the utility model are：
The utility model is a kind of semiconductor power generation device, and compared with prior art, the utility model is sent out by semiconductor
Through first resistor current limliting, potentiometer adjusts the size of output current to the electric current that electrical chip is produced, through voltage-stabiliser tube voltage stabilizing, at the beginning of diode
Output is higher than the firing point of controllable silicon after step rectification, and controlled silicon conducting, electric current passes through through second resistance, controllable silicon, the 4th resistance,
Exported after the first electric capacity tentatively filtering to rectifier rectification, the electric current of rectifier output is defeated after the second electric capacity secondary filtering
Go out.If the conducting electric current of the electric current less than controllable silicon of semiconductor power-generating chip output, when being not enough to triggering controlled silicon conducting, then
Controllable silicon is closed, and plays a part of protection circuit, the characteristics of with voltage stabilizing, regulation output, circuit protection, circuit structure is simple,
Component is few, with low cost, with the value promoted the use of.
Brief description of the drawings
Fig. 1 is circuit structure schematic diagram of the present utility model.
Specific embodiment
The utility model is described in further detail below in conjunction with the accompanying drawings：
As shown in Figure 1：The utility model is by the resistance R4 of first resistor R1 to the 4th, the first electric capacity C1, the second electric capacity C2, half
Conductor power-generating chip B, potentiometer RP, voltage-stabiliser tube DW, diode D, controllable silicon SCR and rectifier DR are constituted, and first resistor R1 is
100 Ω, second resistance R2 be 2k Ω, 3rd resistor R3 be 500 Ω, the 4th resistance R4 be 400 Ω, the first electric capacity C1 be 300uf,
Second electric capacity C2 is 470uf, semiconductor power-generating chip model TEC1-06305, potentiometer are 10k Ω, voltage-stabiliser tube model
2CW1, diode model IN4001, controllable silicon model KP1-2, rectifier are four diode compositions of model IN4001
Bridge rectifier.
Specifically, the first end of semiconductor power-generating chip B is connected with the first end of first resistor R1, semiconductor power-generating chip
Second end of B is connected with the first input end of rectifier DR, and second end of first resistor R1 is connected with the first end of potentiometer RP,
Second end of potentiometer RP is connected with the first end of second resistance R2, the second end and the controllable silicon of the second resistance R2
The negative pole connection of SCR, the sliding end of potentiometer RP is connected with the negative pole of voltage-stabiliser tube DW, and the positive pole of voltage-stabiliser tube DW is with diode D's
Positive pole is connected, and the negative pole of diode D is connected with the control end of controllable silicon SCR, and the of the positive pole of controllable silicon SCR and the 4th resistance R4
One end connects, and second end of the 4th resistance R4 is connected with the first end of the first electric capacity C1 and the first end of 3rd resistor R3 simultaneously,
Second end of 3rd resistor R3 is connected with second end of the first electric capacity C1 and second input of rectifier DR simultaneously, rectifier DR
Positive pole be connected with the first end of the second electric capacity C2 after as cathode output end, the cathode output end of rectifier DR and the second electric capacity
As cathode output end after the second end connection of C2.
Operation principle of the present utility model is as follows：
The electric current that semiconductor power-generating chip B is produced adjusts the size of output current through first resistor R1 current limlitings, potentiometer RP,
Through voltage-stabiliser tube DW voltage stabilizings, output is higher than the firing point of controllable silicon SCR, controllable silicon SCR conducting, electric current after the preliminary rectifications of diode D
Pass through through second resistance R2, controllable silicon SCR, the 4th resistance R4, export whole to rectifier DR after the first electric capacity C1 tentatively filtering
Stream, the electric current of rectifier DR outputs is exported after the second electric capacity C2 secondary filterings.If the electric current of semiconductor power-generating chip B outputs
Less than the conducting electric current of controllable silicon SCR, when being not enough to triggering controllable silicon SCR conducting, then controllable silicon SCR is closed, and plays protection electricity
The effect on road.
General principle of the present utility model and principal character and advantage of the present utility model has been shown and described above.One's own profession
The technical staff of industry it should be appreciated that the utility model is not restricted to the described embodiments, described in above-described embodiment and specification
Simply illustrate principle of the present utility model, on the premise of the utility model spirit and scope are not departed from, the utility model is also
Various changes and modifications are had, these changes and improvements are both fallen within the range of claimed the utility model.The utility model
Claimed scope is by appending claims and its equivalent thereof.
Claims (2)
1. a kind of semiconductor power generation device, it is characterised in that：By first resistor to the 4th resistance, the first electric capacity, the second electric capacity, half
Conductor power-generating chip, potentiometer, voltage-stabiliser tube, diode, controllable silicon and rectifier composition, first resistor are 100 Ω, second resistance
For 2k Ω, 3rd resistor be 500 Ω, the 4th resistance be 400 Ω, the first electric capacity be 300uf, the second electric capacity be 470uf, semiconductor
Power-generating chip model TEC1-06305, potentiometer be 10k Ω, voltage-stabiliser tube model 2CW1, diode model IN4001, can
Control silicon model KP1-2, rectifier are four bridge rectifiers of the diode composition of model IN4001.
2. semiconductor power generation device according to claim 1, it is characterised in that：The first end of the semiconductor power-generating chip
First end with the first resistor is connected, the second end of the semiconductor power-generating chip and the first input end of the rectifier
Connection, the second end of the first resistor is connected with the first end of the potentiometer, the second end of the potentiometer and described the
The first end connection of two resistance, the second end of the second resistance is connected with the negative pole of the controllable silicon, the cunning of the potentiometer
Moved end is connected with the negative pole of the voltage-stabiliser tube, and the positive pole of the voltage-stabiliser tube is connected with the positive pole of the diode, the diode
Negative pole be connected with the control end of the controllable silicon, the positive pole of the controllable silicon is connected with the first end of the 4th resistance, institute
The second end of the 4th resistance is stated while be connected with the first end of first electric capacity and the first end of the 3rd resistor, described the
Second end of three resistance is connected with the second end of first electric capacity and the second input of the rectifier simultaneously, the rectification
The positive pole of device be connected with the first end of second electric capacity after as cathode output end, the cathode output end of the rectifier and institute
State the second electric capacity the second end connection after as cathode output end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621226532.8U CN206211880U (en) | 2016-11-15 | 2016-11-15 | A kind of semiconductor power generation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621226532.8U CN206211880U (en) | 2016-11-15 | 2016-11-15 | A kind of semiconductor power generation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206211880U true CN206211880U (en) | 2017-05-31 |
Family
ID=58753356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621226532.8U Expired - Fee Related CN206211880U (en) | 2016-11-15 | 2016-11-15 | A kind of semiconductor power generation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206211880U (en) |
-
2016
- 2016-11-15 CN CN201621226532.8U patent/CN206211880U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170531 Termination date: 20171115 |