CN206211517U - A kind of overvoltage protective system of silicon controlled rectifier - Google Patents
A kind of overvoltage protective system of silicon controlled rectifier Download PDFInfo
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- CN206211517U CN206211517U CN201621326626.2U CN201621326626U CN206211517U CN 206211517 U CN206211517 U CN 206211517U CN 201621326626 U CN201621326626 U CN 201621326626U CN 206211517 U CN206211517 U CN 206211517U
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- silicon controlled
- controlled rectifier
- absorber
- resistance
- parallel
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- 230000001681 protective effect Effects 0.000 title claims abstract description 11
- 239000006096 absorbing agent Substances 0.000 claims abstract description 32
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 229960001296 zinc oxide Drugs 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
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- Emergency Protection Circuit Devices (AREA)
Abstract
A kind of overvoltage protective system of silicon controlled rectifier that the utility model is provided, in the AC of silicon controlled rectifier, the first rc absorber connected in parallel is set, second rc absorber of parallel connection is set by the IGCT in silicon controlled rectifier, and the DC side in silicon controlled rectifier sets the 3rd rc absorber connected in parallel, limitation silicon controlled rectifier is handed over respectively, during the sub-switching operation cut-out inductor loop electric current of DC side, the overvoltage of several times rated voltage can be formed because of inductance release magnetic field energy, and limit the phase conversion overvoltage of IGCT in silicon controlled rectifier, and then, solve the problems, such as that silicon controlled rectifier is highly susceptible to over-voltage protection and damages in use.
Description
Technical field
The utility model is related to silicon controlled rectifier field, more specifically to a kind of overvoltage of silicon controlled rectifier
Protection system.
Background technology
Rectifier is that alternating current is converted into galvanic device, can be used for electric supply installation and detecting wireless electric signal etc..
Silicon controlled rectifier is fast compared with other rectifiers due to its governing speed, such as diode rectifier, therefore, widely should obtain
With.But, silicon controlled rectifier is highly susceptible to the influence of overvoltage and damages in use.
Utility model content
In view of this, the utility model proposes a kind of overvoltage protective system of silicon controlled rectifier, IGCT to be solved is whole
The technical problem that stream device is highly susceptible to over-voltage protection and damages in use.
In order to solve the above-mentioned technical problem, it is proposed that scheme it is as follows：
A kind of overvoltage protective system of silicon controlled rectifier, including：First rc absorber, the second rc absorber and
Three rc absorbers, wherein：
First rc absorber is connected in parallel on the AC of the silicon controlled rectifier；
Second rc absorber is in parallel with the IGCT in the silicon controlled rectifier；
3rd rc absorber is connected in parallel on the DC side of the silicon controlled rectifier.
Preferably, the resistance of second rc absorber piezo-resistance also in parallel.
Preferably, the piezo-resistance is：Metal oxide piezo-resistance.
Preferably, the metal oxide piezo-resistance is：Zinc-oxide piezoresistor or titanium oxide piezo-resistance.
Preferably, the system also includes：It is connected in parallel on the piezo-resistance of the silicon controlled rectifier AC.
Preferably, the system also includes：It is connected in parallel on the piezo-resistance of the silicon controlled rectifier DC side.
Preferably, the system also includes：It is arranged on the arrester of the silicon controlled rectifier AC.
Compared with prior art, the technical solution of the utility model has advantages below：
The overvoltage protective system of the silicon controlled rectifier that above-mentioned technical proposal is provided, sets in the AC of silicon controlled rectifier
The first rc absorber connected in parallel is put, the second resistance-capacitance absorption of parallel connection is set by the IGCT in silicon controlled rectifier
Device, and in the DC side setting of silicon controlled rectifier the 3rd rc absorber connected in parallel, silicon controlled rectifier is limited respectively
During the sub-switching operation cut-out inductor loop electric current of AC and DC side, several times rated voltage can be formed because of inductance release magnetic field energy
Overvoltage, and limitation silicon controlled rectifier in IGCT phase conversion overvoltage.And then, solve silicon controlled rectifier and using
During the problem that is highly susceptible to over-voltage protection and damages.
Brief description of the drawings
In order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or the accompanying drawing to be used needed for description of the prior art is briefly described, it should be apparent that, drawings in the following description are only
It is some embodiments of the present utility model, for those of ordinary skill in the art, is not paying the premise of creative work
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
A kind of structural representation of the overvoltage protective system of silicon controlled rectifier that Fig. 1 is provided for the utility model embodiment
Figure；
The structural representation of the overvoltage protective system of another silicon controlled rectifier that Fig. 2 is provided for the utility model embodiment
Figure.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment for being obtained, belongs to the scope of the utility model protection.
The present embodiment provides a kind of overvoltage protective system of silicon controlled rectifier, shown in Figure 1, and high voltage power supply is through step-down
Transformer-supplied silicon controlled rectifier, the system includes：First rc absorber 1, the second rc absorber 2 and the 3rd capacitance-resistance are inhaled
Device 3 is received, wherein：
First rc absorber 1 is connected in parallel on the AC of the silicon controlled rectifier.Step-down transformer secondary side (i.e.
The AC of silicon controlled rectifier) rc absorber in parallel, the electric capacity in rc absorber can discharge with quick speed transformer
Magnetic field energy, that is, cause the magnetic field energy of overvoltage, the resistance in rc absorber can be consumed in electromagnetic process and caused
The energy of voltage.And then when can limit the sub-switching operation cut-out inductor loop electric current of silicon controlled rectifier AC, because of inductance
Release magnetic field energy and form the overvoltage of several times rated voltage.
Second rc absorber 2 is in parallel with the IGCT in the silicon controlled rectifier.IGCT is in reverse blocking capability
Before recovery, sizable reverse recovery current will be flowed through under backward voltage effect, when blocking ability recovers, because of Reverse recovery
Electric current ends quickly, can produce overvoltage because of high current rate of change by the inductance of restoring current, i.e. phase conversion overvoltage.Can be with
The phase conversion overvoltage of IGCT in limitation silicon controlled rectifier.
3rd rc absorber 3 is connected in parallel on the DC side of the silicon controlled rectifier.When the fuse blows in circuit or
When DC quick switch cuts off, because direct current reactor discharges energy storage, overvoltage can be caused in silicon controlled rectifier DC side；Separately
Outward, during DC quick switch (or fuse) the cut-out load current of DC side, the energy storage of transformer release also produces overvoltage,
Although AC has limited this overvoltage, when its is excessive, it would still be possible to be transferred to direct current by the IGCT for turning on
Side.Rc absorber is set by DC side, the sub-switching operation cut-out inductance that can limit silicon controlled rectifier DC side is returned
During the electric current of road, the overvoltage of several times rated voltage is formed because of inductance release magnetic field energy.
The overvoltage protective system of the silicon controlled rectifier that the present embodiment is provided, by setting the first rc absorber 1, second
The rc absorber 3 of rc absorber 2 and the 3rd, limits the sub-switching operation cut-out inductance of silicon controlled rectifier AC and DC side respectively
During loop current, the overvoltage of several times rated voltage, and limitation thyristor rectifier can be formed because of inductance release magnetic field energy
The phase conversion overvoltage of IGCT in device.And then, solve silicon controlled rectifier and be highly susceptible to over-voltage protection in use
And the problem damaged.
The overvoltage surge of the contingency of power network is invaded due to external factor such as thunderbolts, IGCT damage is will also result in.Not
Overvoltage of different nature is limited, is the resistor coupled in parallel piezo-resistance 4 of the second rc absorber 2, in thyristor rectifier
Device AC parallel connection piezo-resistance 5, and in the silicon controlled rectifier DC side parallel piezo-resistance 6, in the IGCT
Rectifier AC sets arrester 7.It is shown in Figure 2, that is, constitute linearly with heterogeneous linear combined type resistance capaciting absorpting circuit.It is pressure-sensitive
Resistance is symmetrical in origin because of C-V characteristic, therefore with two-way pressure limiting effect.Piezo-resistance is a kind of nonlinear resistive element, is had
Obvious breakdown voltage, when applied voltage is less than breakdown voltage, leakage current is only milliampere level, is lost small；It is super in applied voltage
When crossing breakdown voltage, piezo-resistance punctures, can be by very big surge current.Piezo-resistance can be pressure-sensitive for metal oxide
Resistance.Specifically, being Zinc-oxide piezoresistor or titanium oxide piezo-resistance.
Herein, such as first and second or the like relational terms be used merely to by an entity or operation with it is another
One entity or operation make a distinction, and not necessarily require or imply these entities or there is any this reality between operating
Relation or order.And, term " including ", "comprising" or its any other variant be intended to the bag of nonexcludability
Contain, so that a series of equipment including key elements not only includes those key elements, but also other including being not expressly set out
Key element, or also include the key element intrinsic for this equipment.In the absence of more restrictions, by sentence " including
It is individual ... " limit key element, it is not excluded that also there is other identical element in the equipment including the key element.
Each embodiment is described by the way of progressive in this specification, and what each embodiment was stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
To the described above of utility model the disclosed embodiments, professional and technical personnel in the field are enable to realize or use
The utility model.Various modifications to these embodiments will be apparent for those skilled in the art, this
General Principle defined in text can be in the case where spirit or scope of the present utility model not be departed from, in other embodiments
Realize.Therefore, the utility model is not intended to be limited to the embodiments shown herein, and be to fit to it is disclosed herein
Principle and the consistent scope most wide of features of novelty.
Claims (7)
1. a kind of overvoltage protective system of silicon controlled rectifier, it is characterised in that including：First rc absorber, the second capacitance-resistance
Absorber and the 3rd rc absorber, wherein,
First rc absorber is connected in parallel on the AC of the silicon controlled rectifier；
Second rc absorber is in parallel with the IGCT in the silicon controlled rectifier；
3rd rc absorber is connected in parallel on the DC side of the silicon controlled rectifier.
2. system according to claim 1, it is characterised in that the resistance of second rc absorber pressure-sensitive electricity also in parallel
Resistance.
3. system according to claim 2, it is characterised in that the piezo-resistance is：Metal oxide piezo-resistance.
4. system according to claim 3, it is characterised in that the metal oxide piezo-resistance is：Zinc oxide pressure-sensitive
Resistance or titanium oxide piezo-resistance.
5. system according to claim 1, it is characterised in that the system also includes：It is connected in parallel on the thyristor rectifier
The piezo-resistance of device AC.
6. system according to claim 1, it is characterised in that the system also includes：It is connected in parallel on the thyristor rectifier
The piezo-resistance of device DC side.
7. system according to claim 1, it is characterised in that the system also includes：It is arranged on the thyristor rectifier
The arrester of device AC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621326626.2U CN206211517U (en) | 2016-12-05 | 2016-12-05 | A kind of overvoltage protective system of silicon controlled rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621326626.2U CN206211517U (en) | 2016-12-05 | 2016-12-05 | A kind of overvoltage protective system of silicon controlled rectifier |
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| Publication Number | Publication Date |
|---|---|
| CN206211517U true CN206211517U (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621326626.2U Active CN206211517U (en) | 2016-12-05 | 2016-12-05 | A kind of overvoltage protective system of silicon controlled rectifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658842A (en) * | 2017-11-08 | 2018-02-02 | 华北电力大学 | DC side fault protection system and method based on MMC submodules topology |
-
2016
- 2016-12-05 CN CN201621326626.2U patent/CN206211517U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658842A (en) * | 2017-11-08 | 2018-02-02 | 华北电力大学 | DC side fault protection system and method based on MMC submodules topology |
| CN107658842B (en) * | 2017-11-08 | 2019-11-12 | 华北电力大学 | DC side fault protection system and method based on MMC submodule topology |
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