CN206195607U - Gate protection circuit and power electronic equipment - Google Patents
Gate protection circuit and power electronic equipment Download PDFInfo
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- CN206195607U CN206195607U CN201621255841.8U CN201621255841U CN206195607U CN 206195607 U CN206195607 U CN 206195607U CN 201621255841 U CN201621255841 U CN 201621255841U CN 206195607 U CN206195607 U CN 206195607U
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Abstract
The utility model provides a gate protection circuit and power electronic equipment, wherein, the gate protection circuit includes: main transmission line connects between the grid of gate drive module and MOS pipe, the reference signal module for generate reference signal, compare the module, relatively two inputs of module are connected to gate drive module and reference signal module respectively, voltage -controlled module is connected between main transmission line's output and ground wire, and the drive end of voltage -controlled module is connected in the output that compares the module, and wherein, when gate driving signal was more than or equal to reference signal, relatively the module switched on the signal to the output of voltage -controlled module to controlling voltage -controlled module and switching on, the partial pressure signal of voltage -controlled module exports the grid that MOS managed to as guard signal, and the partial pressure signal is less than gate driving signal. Through the utility model discloses technical scheme has improved the reliability of intelligent power module, reduces the possibility that the grid excessive pressure was become invalid.
Description
Technical field
The utility model is related to gate protection circuit technical field, in particular to a kind of gate protection circuit and one
Plant power electronic equipment.
Background technology
SPM, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity
The power drive device (Deriver Integrated Circuit, i.e. Driver IC) that road technique is combined.Due to collecting with height
The advantages such as Cheng Du, high reliability, SPM wins increasing market, is particularly suitable for the frequency converter of motor
And various inverters, it is the conventional power electronics of frequency control, metallurgical machinery, electric propulsion, servo-drive and frequency-conversion domestic electric appliances
Device.
Wide-band gap material with carborundum and gallium nitride as representative is applied in semiconductor devices, and especially power electronics sets
In standby driving chip (Deriver Integrated Circuit, i.e. Driver IC), due to its energy gap and breakdown field
Silicon materials semiconductor devices is far above by force.
In correlation technique, the main flow Drive Protecting Circuit of driving chip Driver IC includes following two, such as Figure 1A,
The outside of driving chip Driver IC sets protective resistance R1, and the drive signal to grid (the Gate ends shown in Figure 1A) enters
The treatment of row current limliting, or as shown in Figure 1B, protective resistance R2 is set in the inner side of driving chip Driver IC, to grid (in Figure 1B
Shown Gate ends) drive signal carry out current limliting treatment.
But, under the pressure-resistant load of identical, the parasitic capacitance of wide-band gap material MOSFET is much smaller than silicon materials semiconductor
Device, its parasitic parameter to drive circuit is more sensitive, is more suitable for being worked under the driving voltage of -2~+20V, and silicon materials
Semiconductor devices is suitable to be worked under the driving voltage of 0-15V, voltage UGSWhen (voltage between grid and source electrode) is changed into negative value,
The oxidation layer capacitance at grid source two ends can increase, and this can increase the quantity of electric charge required when MOSFET is opened and turned off, so as to influence out
Close speed.Therefore the type of drive of silicon materials semiconductor devices is applied mechanically completely come to drive wide-band gap material MOSFET be irrational.
Utility model content
The utility model is intended at least solve one of technical problem present in prior art or correlation technique.
Therefore, a purpose of the present utility model is to propose a kind of gate protection circuit.
Another purpose of the present utility model is to propose a kind of power electronic equipment.
To achieve the above object, according to the embodiment of first aspect of the present utility model, it is proposed that a kind of gate protection electricity
Road, including：Main transmission line road, is connected between grid electrode drive module and the grid of metal-oxide-semiconductor；Reference signal module, for generating
Reference signal；Comparison module, two inputs of comparison module are respectively connecting to grid electrode drive module and reference signal module, use
It is compared with reference signal in gate drive signal；Voltage-controlled module, be connected to the output end on main transmission line road and ground wire it
Between, the drive end of voltage-controlled module is connected to the output end of comparison module, wherein, in gate drive signal more than or equal to reference to letter
Number when, comparison module exports Continuity signal to voltage-controlled module, to control voltage-controlled module to turn on, the voltage division signal conduct of voltage-controlled module
Protection signal is exported to the grid of metal-oxide-semiconductor, and voltage division signal is less than gate drive signal.
According to the gate protection circuit of embodiment of the present utility model, by setting reference signal in gate protection circuit
Module, comparison module and voltage-controlled module, and when gate drive signal is more than or equal to reference signal, comparison module is to voltage-controlled
Module exports Continuity signal, and to control voltage-controlled module to turn on, the voltage division signal of voltage-controlled module is exported to metal-oxide-semiconductor as protection signal
Grid, voltage division signal is less than gate drive signal, exports adjustable reference signal by reference to signaling module, it is adaptable to various
The raster data model protection of drive circuit, will drive the protection of IC internal over pressure to be combined with external circuit overvoltage protection, namely by adopting
With the pattern of actively voltage-controlled driving, gate protection circuit is at utmost reduced because grid overvoltage is failed, improve SPM
Reliability；At the same time, what whole drive circuit was additional possesses the function of optimization MOSFET parameters, especially to playing wide the taboo
Advantage with device provides strong support.
It is worth it is emphasized that above-mentioned gate protection circuit is not limited to broad stopband MOSFET, by adjusting with reference to letter
The reference signal of number module output, is equally applicable in the raster data model protection scheme of silicon-based semiconductor devices.
According to the gate protection circuit of above-described embodiment of the present utility model, there can also be following technical characteristic：
Preferably, also include：The first protective resistance is provided with main transmission line road；Voltage-controlled module includes：The pressure being connected in series
Control switch and the second protective resistance, the drive end of votage control switch is connected to the output end of comparison module, in the driving of votage control switch
When termination receives Continuity signal, votage control switch conducting, the first protective resistance, votage control switch and the second protective resistance are to raster data model
Signal carries out voltage division processing, and voltage-controlled module exports the partial pressure value of votage control switch and the second protective resistance as protection signal.
According to the gate protection circuit of embodiment of the present utility model, conducting is received by the drive end of votage control switch
During signal, votage control switch conducting, the first protective resistance, votage control switch and the second protective resistance carry out partial pressure to gate drive signal
The partial pressure value for the treatment of, voltage-controlled module output votage control switch and the second protective resistance is used as protection signal.
Specifically, when comparison module judges that gate drive signal is more than or equal to reference signal, the grid of metal-oxide-semiconductor is present
The danger of overvoltage failure, therefore, Continuity signal is exported by comparison module and controls votage control switch to turn on, the electric conduction of votage control switch
Pressure is generally fixed value, therefore, the first protective resistance and the second protective resistance carry out partial pressure, the guarantor of output to gate drive signal
Shield signal is less than gate drive signal, reduces metal-oxide-semiconductor because of the too high and breakdown possibility of the magnitude of voltage of grid.
Preferably, when votage control switch is triode, drive end is the base stage of triode.
Preferably, when votage control switch is metal-oxide-semiconductor, drive end is the grid of metal-oxide-semiconductor.
Preferably, comparison module includes：Comparator, the positive input terminal of comparator is connected to grid electrode drive module, to obtain
Gate drive signal, the negative input end of comparator is connected to reference signal module, to obtain reference signal；Triode is NPN type
Triode, the output end of comparator is connected to the base stage of NPN type triode, wherein, judge that gate drive signal is big in comparator
When reference signal module, the output end of comparator output high level signal, i.e., as Continuity signal controlling NPN type
Triode ON.
According to the gate protection circuit of embodiment of the present utility model, by setting comparator and NPN in comparison module
Type triode, and when comparator judges that gate drive signal is more than or equal to reference signal module, the output end of comparator
Output high level signal, i.e., as Continuity signal to control NPN type triode to turn on, protected by the first protective resistance and second
The partial pressure of resistance exports to reduce the magnitude of voltage of grid, improves the reliability of metal-oxide-semiconductor.
Preferably, comparison module includes：Comparator, the positive input terminal of comparator is connected to grid electrode drive module, to obtain
Gate drive signal, the negative input end of comparator is connected to reference signal module, to obtain reference signal；Metal-oxide-semiconductor is P-channel
Metal-oxide-semiconductor, the output end of comparator is connected to the grid of P-channel MOS pipes, wherein, judge that gate drive signal is more than in comparator
Or during equal to reference signal module, the output end of comparator output high level signal, i.e., as Continuity signal controlling P-channel
Metal-oxide-semiconductor is turned on.
According to the gate protection circuit of embodiment of the present utility model, by setting comparator and P ditches in comparison module
Road metal-oxide-semiconductor, and when comparator judges that gate drive signal is more than or equal to reference signal module, the output end of comparator is defeated
Go out high level signal, i.e., as Continuity signal to control P-channel metal-oxide-semiconductor to turn on, by the first protective resistance and the second protection electricity
The partial pressure of resistance exports to reduce the magnitude of voltage of grid, improves the reliability of metal-oxide-semiconductor.
Preferably, when comparison module judges that gate drive signal is less than reference signal, comparison module is defeated to voltage-controlled module
Go out cut-off signals, to control voltage-controlled module to turn off, gate drive signal is transmitted to the grid of metal-oxide-semiconductor by main transmission line road.
According to the gate protection circuit of embodiment of the present utility model, judge that gate drive signal is small by comparison module
When reference signal, comparison module exports cut-off signals to voltage-controlled module, and to control voltage-controlled module to turn off, gate drive signal leads to
Cross main transmission line road to transmit to the grid of metal-oxide-semiconductor, namely when gate drive signal belongs to working range, voltage-controlled module not work
Make, directly export gate drive signal to the grid of metal-oxide-semiconductor, to ensure metal-oxide-semiconductor normally or shut-off.
Preferably, grid electrode drive module also includes：Drive signal generator, for generating gate drive signal；Built-in guarantor
Shield resistance, is connected to the output end of drive signal generator and grid electrode drive module.
According to the gate protection circuit of embodiment of the present utility model, sent out located at drive signal by by built-in protective resistance
Between raw device and the output end of grid electrode drive module, the grid current to metal-oxide-semiconductor carries out current limliting treatment, reduces metal-oxide-semiconductor by thermal shock
The possibility worn.
Preferably, metal-oxide-semiconductor is gallium nitride MOSFET element or silicon carbide MOSFET device.
Preferably, reference signal module includes：The resistive element and voltage-regulator diode being connected in series, are connected in series in direct current
Between source and ground wire, the common port of resistive element and voltage-regulator diode is connected to voltage-controlled as the output end of reference signal module
The drive end of module.
According to the embodiment of second aspect of the present utility model, it is proposed that a kind of power electronic equipment, including as described above
The gate protection circuit of any one of one side.
Preferably, power electronic equipment is air-conditioner.
Additional aspect of the present utility model and advantage will be set forth in part in the description, partly by from following description
In become obvious, or by it is of the present utility model practice recognize.
Brief description of the drawings
Of the present utility model above-mentioned and/or additional aspect and advantage will from description of the accompanying drawings below to embodiment is combined
Become substantially and be readily appreciated that, wherein：
Figure 1A shows the schematic diagram of one embodiment of Drive Protecting Circuit of the prior art；
Figure 1B shows the schematic diagram of another embodiment of Drive Protecting Circuit of the prior art；
Fig. 2 shows the schematic diagram of the gate protection circuit according to embodiment of the present utility model；
Fig. 3 shows the schematic diagram of the power electronic equipment according to embodiment of the present utility model.
Specific embodiment
In order to be more clearly understood that above-mentioned purpose of the present utility model, feature and advantage, below in conjunction with the accompanying drawings and tool
Body implementation method is further described in detail to the utility model.It should be noted that in the case where not conflicting, this Shen
Feature in embodiment please and embodiment can be mutually combined.
Many details are elaborated in the following description in order to fully understand the utility model, but, this practicality
It is new to be different from other modes described here using other to implement, therefore, protection domain of the present utility model is simultaneously
Do not limited by following public specific embodiment.
Fig. 2 shows the schematic diagram of the gate protection circuit according to embodiment of the present utility model.
As shown in Fig. 2 the gate protection circuit 200 according to embodiment of the present utility model, including：Main transmission line road, even
It is connected between grid electrode drive module IC and the grid G ate of metal-oxide-semiconductor；Reference signal module, for generating reference signal；Compare mould
Block, two inputs of comparison module are respectively connecting to grid electrode drive module IC and reference signal module, for raster data model
Signal is compared with reference signal；Voltage-controlled module 206, is connected between the output end on main transmission line road and ground wire, voltage-controlled mould
The drive end of block 206 is connected to the output end of comparison module, wherein, when gate drive signal is more than or equal to reference signal,
Comparison module exports Continuity signal, to control voltage-controlled module 206 to turn on, the voltage division signal of voltage-controlled module 206 to voltage-controlled module 206
Exported as protection signal to the grid G ate of metal-oxide-semiconductor, voltage division signal is less than gate drive signal.
Gate protection circuit 200 according to embodiment of the present utility model, by setting ginseng in gate protection circuit 200
Signaling module, comparison module and voltage-controlled module 206 are examined, and when gate drive signal is more than or equal to reference signal, is compared
Module exports Continuity signal, to control voltage-controlled module 206 to turn on, the voltage division signal conduct of voltage-controlled module 206 to voltage-controlled module 206
Protection signal is exported to the grid G ate of metal-oxide-semiconductor, and voltage division signal is less than gate drive signal, defeated by reference to signaling module 202
Go out adjustable reference signal, it is adaptable to the raster data model protection of various drive circuits, the protection of IC internal over pressure and outside will be driven
Circuit overvoltage protection is combined, namely by the pattern using actively voltage-controlled driving, at utmost reduces gate protection circuit because of grid
Extremely overvoltage failure, improves the reliability of SPM；At the same time, what whole drive circuit was additional possesses optimization
The function of MOSFET parameters, especially provides strong support to the advantage for playing broad stopband device.
It is worth it is emphasized that above-mentioned gate protection circuit 200 is not limited to broad stopband MOSFET, is referred to by adjusting
The reference signal of the output of signaling module 202, is equally applicable in the raster data model protection scheme of silicon-based semiconductor devices.
Gate protection circuit 200 according to above-described embodiment of the present utility model, can also have following technical characteristic：
Preferably, also include：The first protective resistance R1 is provided with main transmission line road；Voltage-controlled module 206 includes：It is connected in series
Votage control switch S and the drive end of the second protective resistance R2, votage control switch S be connected to the output end of comparison module, opened voltage-controlled
When the drive end for closing S receives Continuity signal, votage control switch S conductings, the first protective resistance R1, votage control switch S and second are protected
Resistance R2 carries out voltage division processing to gate drive signal, and the output of voltage-controlled module 206 votage control switch S's and the second protective resistance R2 divides
Pressure value is used as protection signal.
Gate protection circuit 200 according to embodiment of the present utility model, receives by the drive end of votage control switch S
During Continuity signal, votage control switch S conductings, the first protective resistance R1, votage control switch S and the second protective resistance R2 are believed raster data model
Voltage division processing number is carried out, the partial pressure value of the output of voltage-controlled module 206 votage control switch S and the second protective resistance R2 is used as protection signal.
Specifically, when comparison module judges that gate drive signal is more than or equal to reference signal, the grid G ate of metal-oxide-semiconductor
In the presence of the danger of overvoltage failure, therefore, Continuity signal is exported by comparison module and controls votage control switch S to turn on, votage control switch S's
Conducting voltage is generally fixed value, therefore, the first protective resistance R1 and the second protective resistance R2 are divided gate drive signal
Pressure, the protection signal of output is less than gate drive signal, reduces metal-oxide-semiconductor because of the too high and breakdown possibility of the magnitude of voltage of grid
Property.
Preferably, when votage control switch S is triode, drive end is the base stage of triode.
Preferably, when votage control switch S is metal-oxide-semiconductor, drive end is the grid G ate of metal-oxide-semiconductor.
Preferably, comparison module includes：Comparator 204, the positive input terminal of comparator 204 is connected to grid electrode drive module
IC, to obtain gate drive signal, the negative input end of comparator 204 is connected to reference signal module, to obtain reference signal；Three
Pole pipe is NPN type triode, and the output end of comparator 204 is connected to the base stage of NPN type triode, wherein, sentence in comparator 204
When determining gate drive signal more than or equal to reference signal module, output end output high level signal, the i.e. conduct of comparator 204
Continuity signal is turned on controlling NPN type triode.
Gate protection circuit 200 according to embodiment of the present utility model, by setting comparator 204 in comparison module
And NPN type triode, and when comparator 204 judges that gate drive signal is more than or equal to reference signal module, comparator
204 output end output high level signal, i.e., as Continuity signal to control NPN type triode to turn on, by the first protection electricity
Hinder the partial pressure output of R1 and the second protective resistance R2 to reduce the magnitude of voltage of grid, improve the reliability of metal-oxide-semiconductor.
Preferably, comparison module includes：Comparator 204, the positive input terminal of comparator 204 is connected to grid electrode drive module
IC, to obtain gate drive signal, the negative input end of comparator 204 is connected to reference signal module, to obtain reference signal；
Metal-oxide-semiconductor is P-channel metal-oxide-semiconductor, and the output end of comparator 204 is connected to the grid G ate of P-channel metal-oxide-semiconductor, wherein, in comparator
When 204 judgement gate drive signals are more than or equal to reference signal module, the output end output high level signal of comparator 204,
I.e. as Continuity signal with control P-channel metal-oxide-semiconductor turn on.
Gate protection circuit 200 according to embodiment of the present utility model, by setting comparator 204 in comparison module
With P-channel metal-oxide-semiconductor, and comparator 204 judge gate drive signal be more than or equal to reference signal module when, comparator
204 output end output high level signal, i.e., as Continuity signal to control P-channel metal-oxide-semiconductor to turn on, by the first protective resistance
The partial pressure of R1 and the second protective resistance R2 exports to reduce the magnitude of voltage of grid, improves the reliability of metal-oxide-semiconductor.
Preferably, when comparison module judges that gate drive signal is less than reference signal, comparison module is to voltage-controlled module 206
Output cut-off signals, to control voltage-controlled module 206 to turn off, gate drive signal is transmitted to the grid of metal-oxide-semiconductor by main transmission line road
Pole Gate.
Gate protection circuit 200 according to embodiment of the present utility model, judges that raster data model is believed by comparison module
Number less than reference signal when, comparison module to voltage-controlled module 206 export cut-off signals, to control voltage-controlled module 206 to turn off, grid
Drive signal is transmitted to the grid G ate of metal-oxide-semiconductor, namely when gate drive signal belongs to working range by main transmission line road,
Voltage-controlled module 206 does not work, and directly exports gate drive signal to the grid G ate of metal-oxide-semiconductor, to ensure metal-oxide-semiconductor normally
Or shut-off.
Preferably, grid electrode drive module IC also includes：Drive signal generator, for generating gate drive signal；It is built-in
Protective resistance, is connected to the output end of drive signal generator and grid electrode drive module IC.
Gate protection circuit 200 according to embodiment of the present utility model, believes by by built-in protective resistance located at driving
Number between generator and the output end of grid electrode drive module IC, the grid G ate electric currents to metal-oxide-semiconductor carry out current limliting treatment, reduce
Metal-oxide-semiconductor is by the possibility of thermal breakdown.
Preferably, metal-oxide-semiconductor is gallium nitride MOSFET element or silicon carbide MOSFET device.
Preferably, reference signal module 202 includes：The resistive element and voltage-regulator diode being connected in series, are connected in series in
Between DC source and ground wire, the common port of resistive element and voltage-regulator diode is connected as the output end of reference signal module 202
To the drive end of voltage-controlled module 206.
Preferably, built-in current limiting safeguard resistor R0 is provided with grid electrode drive module IC, to reduce metal-oxide-semiconductor by thermal breakdown
Possibility.
According to the embodiment of power electronic equipment of the present utility model：
Fig. 3 shows the schematic diagram of the power electronic equipment according to embodiment of the present utility model.
As shown in figure 3, power electronic equipment according to embodiment of the present utility model include a gate protection circuit (under
Literary abbreviation Driver IC), raster data model interface is HO1 interfaces, HO2 interfaces, HO3 interfaces, LO1 interfaces, the LO2 of Drive IC
Interface and LO3 interfaces.
According to one embodiment of the present utility model, three upper bridge arm power devices include the first power device MOSFET1,
Second power device MOSFET2 and the 3rd power device MOSFET3, three lower bridge arm power devices include the 4th power device
MOSFET4, the 5th power device MOSFET5 and the 6th power device MOSFET6, first kind gallium nitride diode include the first nitrogen
Change gallium diode D1, the second gallium nitride diode D2 and the 3rd gallium nitride diode D3, Equations of The Second Kind gallium nitride diode includes the
Four gallium nitride diode D4, the 5th gallium nitride diode D5 and the 6th gallium nitride diode D6, wherein, any upper bridge arm power device
The drain electrode of part is connected to the negative electrode of the first kind gallium nitride diode of correspondence sequence number, the source electrode connection of any upper bridge arm power device
To the anode of the first kind gallium nitride diode of correspondence sequence number, the drain electrode of any lower bridge arm power device is connected to correspondence sequence number
The negative electrode of Equations of The Second Kind gallium nitride diode, the source electrode of any lower bridge arm power device is connected to the Equations of The Second Kind gallium nitride of correspondence sequence number
The anode of diode.
According to one embodiment of the present utility model, also include：7th power device MOSFET7, the 7th power device
The grid of MOSFET7 is connected to the PFCOUT interfaces for driving integrated unit (Driver IC as shown in Figure 3)；7th gallium nitride
The negative electrode of diode D7, the 7th gallium nitride diode D7 is connected to the drain electrode of the 7th power device MOSFET7, the 7th gallium nitride two
The anode of pole pipe D7 is connected to the source electrode of the 7th power device MOSFET7；8th gallium nitride diode D8, the pole of the 8th gallium nitride two
The negative electrode of pipe D8 is connected to the positive pole of the high-voltage power supply powered to inverse switch unit of peripheral hardware, and (VCC1 as shown in Figure 3 will pass through
External circuit is connected to VCC2), the anode of the 8th gallium nitride diode D8 is connected to the drain electrode of the 7th power device MOSFET7,
Wherein, the drain electrode of the 7th power device MOSFET7 is connected to the DC power anode of peripheral hardware, the 7th power device MOSFET7's
Source electrode be connected to peripheral hardware DC power cathode and the high-voltage power supply powered to inverse switch unit negative pole (it is as shown in Figure 3-
VCC will be connected to U-, V-, W- by external circuit).
According to the gate protection circuit of embodiment of the present utility model, by the grid for setting the 7th power device MOSFET7
Pole is connected to and drives the corresponding raster data model interface of integrated unit (Driver IC as shown in Figure 3) (as shown in Figure 3
The PFCOUT interfaces of Driver IC), the negative electrode of the 7th gallium nitride diode D7 is connected to the leakage of the 7th power device MOSFET7
Pole, the anode of the 7th gallium nitride diode D7 is connected to the source electrode of the 7th power device MOSFET7, the 8th gallium nitride diode D8
Negative electrode be connected to the positive pole of the high-voltage power supply powered to inverse switch unit of peripheral hardware (VCC1 as shown in Figure 3 will be by outside
Circuit is connected to VCC2), the anode of the 8th gallium nitride diode D8 is connected to the drain electrode of the 7th power device MOSFET7, as
Power factor (PF) alignment unit PFC (Power Factor Correction, PFC), is ensureing low-power consumption, low service time and low
Current noise it is motor-driven simultaneously, improve the stability and reliability of power.
According to one embodiment of the present utility model, the first power device MOSFET1, the second power device MOSFET2 and
The drain electrode of the 3rd power device MOSFET3 is connected to the high-voltage power supply positive pole of peripheral hardware, the 4th power device MOSFET4, the 5th work(
The source electrode of rate device MOSFET5 and the 6th power device MOSFET6 is connected to the high-voltage power supply negative pole of peripheral hardware, the first power device
The source electrode of MOSFET1 is connected to the drain electrode of the 4th power device MOSFET4, and the source electrode of the second power device MOSFET2 is connected to
The drain electrode of the 5th power device MOSFET5, the source electrode of the 3rd power device MOSFET3 is connected to the 6th power device MOSFET6
Drain electrode, wherein, the motor U that the source electrode (U/VS1 as shown in Figure 3) of the first power device MOSFET1 is connected to peripheral hardware connects
Mouthful, the source electrode (V/VS2 as shown in Figure 3) of the second power device MOSFET2 is connected to the motor V interfaces of peripheral hardware, the 3rd work(
The source electrode (W/VS3 as shown in Figure 3) of rate device MOSFET3 is connected to the motor W interfaces of peripheral hardware.
According to one embodiment of the present utility model, raster data model interface (the HO1 interfaces of Drive IC as shown in Figure 3,
HO2 interfaces, HO3 interfaces, LO1 interfaces, LO2 interfaces, LO3 interfaces and PFCOUT interfaces) include that the first driving interface, second drive
Interface, the 3rd driving interface, the 4th driving interface, the 5th driving interface, the 6th driving interface and the 7th driving interface, grid are protected
Protection circuit includes：First grid protection circuit 200, is connected to the grid and the first driving interface of the first power device MOSFET1
Between HO1, second grid protection circuit 200 is connected to the grid and the second driving interface HO2 of the second power device MOSFET2
Between, the 3rd gate protection circuit 200, be connected to the 3rd power device MOSFET3 grid and the 3rd driving interface HO3 it
Between, the 4th gate protection circuit 200 is connected between the grid of the 4th power device MOSFET4 and the 4th driving interface LO1,
5th gate protection circuit 200, is connected between the grid of the 5th power device MOSFET5 and the 5th driving interface LO2, the 6th
Gate protection circuit 200, is connected between the grid of the 6th power device MOSFET6 and the 6th driving interface LO3, the 7th grid
Protection circuit 200, is connected between the grid of the 7th power device MOSFET7 and the 7th driving interface PFCOUT.
According to the gate protection circuit of embodiment of the present utility model, by setting reference signal in gate protection circuit
Module, comparison module and voltage-controlled module, and when gate drive signal is more than or equal to reference signal, comparison module is to voltage-controlled
Module exports Continuity signal, and to control voltage-controlled module to turn on, the voltage division signal of voltage-controlled module is exported to metal-oxide-semiconductor as protection signal
Grid, voltage division signal is less than gate drive signal, exports adjustable reference signal by reference to signaling module, it is adaptable to various
The raster data model protection of drive circuit, will drive the protection of IC internal over pressure to be combined with external circuit overvoltage protection, namely by adopting
With the pattern of actively voltage-controlled driving, gate protection circuit is at utmost reduced because grid overvoltage is failed, improve SPM
Reliability；At the same time, what whole drive circuit was additional possesses the function of optimization MOSFET parameters, especially to playing wide the taboo
Advantage with device provides strong support.
The technical solution of the utility model is described in detail above in association with accompanying drawing, it is contemplated that how is proposition in correlation technique
The breakdown possibility of grid in reduction driving chip, the utility model proposes a kind of grid suitable for variety classes MOSFET
Pole protection circuit, by setting reference signal module, comparison module and voltage-controlled module in gate protection circuit, and in grid
When drive signal is more than or equal to reference signal, comparison module exports Continuity signal to voltage-controlled module, to control voltage-controlled module to lead
Logical, the voltage division signal of voltage-controlled module is exported to the grid of metal-oxide-semiconductor as protection signal, and voltage division signal is less than gate drive signal,
Adjustable reference signal is exported by reference to signaling module, it is adaptable to the raster data model protection of various drive circuits, IC will be driven
Internal over pressure protection is combined with external circuit overvoltage protection, namely by the pattern using actively voltage-controlled driving, is at utmost dropped
Low gate protection circuit fails because of grid overvoltage, improves the reliability of SPM；At the same time, whole drive circuit is attached
Plus possess optimization MOSFET parameters function, especially to play broad stopband device advantage provide strong support.
Preferred embodiment of the present utility model is the foregoing is only, the utility model is not limited to, for this
For the technical staff in field, the utility model can have various modifications and variations.It is all it is of the present utility model spirit and principle
Within, any modification, equivalent substitution and improvements made etc. should be included within protection domain of the present utility model.
Claims (12)
1. a kind of gate protection circuit, is connected between grid electrode drive module and the grid of metal-oxide-semiconductor, the grid electrode drive module to
The grid output gate drive signal of the metal-oxide-semiconductor, it is characterised in that the gate protection circuit includes：
Main transmission line road, is connected between grid electrode drive module and the grid of metal-oxide-semiconductor；
Reference signal module, for generating reference signal；
Comparison module, two inputs of the comparison module are respectively connecting to the grid electrode drive module and the reference signal
Module, for being compared with the reference signal to the gate drive signal；
Voltage-controlled module, is connected between the output end on the main transmission line road and ground wire, the drive end connection of the voltage-controlled module
In the output end of the comparison module,
Wherein, when the gate drive signal is more than or equal to the reference signal, the comparison module is to the voltage-controlled mould
Block exports Continuity signal, and to control the voltage-controlled module to turn on, the voltage division signal of the voltage-controlled module is exported as protection signal
To the grid of the metal-oxide-semiconductor, the voltage division signal is less than the gate drive signal.
2. gate protection circuit according to claim 1, it is characterised in that
The first protective resistance is provided with the main transmission line road；
The voltage-controlled module includes：
The votage control switch being connected in series and the second protective resistance, the drive end of the votage control switch are connected to the comparison module
Output end, when the drive end of the votage control switch receives the Continuity signal, the votage control switch conducting, described first protects
Shield resistance, the votage control switch and second protective resistance carry out voltage division processing to the gate drive signal, described voltage-controlled
Module exports the partial pressure value of the votage control switch and second protective resistance as the protection signal.
3. gate protection circuit according to claim 2, it is characterised in that
When the votage control switch is triode, the drive end is the base stage of the triode.
4. gate protection circuit according to claim 2, it is characterised in that
When the votage control switch is metal-oxide-semiconductor, the drive end is the grid of the metal-oxide-semiconductor.
5. gate protection circuit according to claim 3, it is characterised in that the comparison module includes：
Comparator, the positive input terminal of the comparator is connected to the grid electrode drive module, to obtain the gate drive signal,
The negative input end of the comparator is connected to the reference signal module, to obtain the reference signal；
The triode is NPN type triode, and the output end of the comparator is connected to the base stage of the NPN type triode,
Wherein, when the comparator judges that the gate drive signal is more than or equal to the reference signal module, the ratio
Output end compared with device exports high level signal, i.e., as the Continuity signal controlling the NPN type triode to turn on.
6. the gate protection circuit according to claim 2 or 4, it is characterised in that the comparison module includes：
Comparator, the positive input terminal of the comparator is connected to the grid electrode drive module, to obtain the gate drive signal,
The negative input end of the comparator is connected to the reference signal module, to obtain the reference signal；
The metal-oxide-semiconductor is P-channel metal-oxide-semiconductor, and the output end of the comparator is connected to the grid of the P-channel metal-oxide-semiconductor,
Wherein, when the comparator judges that the gate drive signal is more than or equal to the reference signal module, the ratio
Output end compared with device exports high level signal, i.e., as the Continuity signal controlling the P-channel metal-oxide-semiconductor to turn on.
7. gate protection circuit according to any one of claim 1 to 4, it is characterised in that
When the comparison module judges that the gate drive signal is less than the reference signal, the comparison module is to the pressure
Control module output cut-off signals, to control the voltage-controlled module to turn off, the gate drive signal passes through the main transmission line road
Transmit to the grid of the metal-oxide-semiconductor.
8. gate protection circuit according to any one of claim 1 to 4, it is characterised in that the grid electrode drive module
Also include：
Drive signal generator, for generating the gate drive signal；
Built-in protective resistance, is connected to the output end of the drive signal generator and the grid electrode drive module.
9. gate protection circuit according to any one of claim 1 to 4, it is characterised in that
The metal-oxide-semiconductor is gallium nitride MOSFET element or silicon carbide MOSFET device.
10. gate protection circuit according to any one of claim 1 to 4, it is characterised in that the reference signal module
Including：
The resistive element and voltage-regulator diode being connected in series, are connected in series between DC source and ground wire, the resistive element and
The common port of the voltage-regulator diode is connected to the driving of the voltage-controlled module as the output end of the reference signal module
End.
A kind of 11. power electronic equipments, it is characterised in that including：
Gate protection circuit as any one of claim 1 to 10.
12. power electronic equipments according to claim 11, it is characterised in that
The power electronic equipment is air-conditioner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621255841.8U CN206195607U (en) | 2016-11-18 | 2016-11-18 | Gate protection circuit and power electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621255841.8U CN206195607U (en) | 2016-11-18 | 2016-11-18 | Gate protection circuit and power electronic equipment |
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| CN206195607U true CN206195607U (en) | 2017-05-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106411114A (en) * | 2016-11-18 | 2017-02-15 | 美的集团股份有限公司 | Gate protection circuit and power electronic equipment |
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2016
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106411114A (en) * | 2016-11-18 | 2017-02-15 | 美的集团股份有限公司 | Gate protection circuit and power electronic equipment |
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