CN206195342U - Electric protection circuit and intelligence switch are got to single fire closed state - Google Patents
Electric protection circuit and intelligence switch are got to single fire closed state Download PDFInfo
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- CN206195342U CN206195342U CN201621235914.7U CN201621235914U CN206195342U CN 206195342 U CN206195342 U CN 206195342U CN 201621235914 U CN201621235914 U CN 201621235914U CN 206195342 U CN206195342 U CN 206195342U
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Abstract
The utility model relates to an electric protection circuit is got to single fire closed state, include: anti surge protection circuit, MOS get circuit, relay and intelligent object, and electric circuits parallel connected is got with MOS to anti surge protection circuit, the both ends that anti surge protection circuit and MOS got the circuit link to each other with live wire and intelligent object electrical property respectively, anti surge protection circuit includes silicon controlled rectifier and photosensitive silicon bidirection switch, and the input of silicon controlled rectifier links to each other with the live wire electrical property, and the output links to each other with the relay electrical property, and the control end links to each other with photosensitive silicon bidirection switch electrical property, and photosensitive silicon bidirection switch still gets the circuit electrical property with intelligent object and MOS and links to each other, and the output of relay links to each other with the zero line electrical property. Above -mentioned protection circuit has been owing to introduced the anti surge protection circuit of silicon controlled rectifier, the closed state get the electricity in the twinkling of an eye starting protection strike in order to bear surge current, it is not impaired that the device of circuit is got in the protection. In addition, the utility model provides an intelligence switch of electric protection circuit is got including above -mentioned single fire closed state.
Description
Technical field
The utility model is related to smart machine technology, more particularly to a kind of single fire closed state power taking protection circuit and including the guarantor
The intelligent switch of protection circuit.
Background technology
In intelligent home control system, the power supply mode of domestic electric appliances controller (such as lamp dimmer) needs the zero, feelings of live wire
Condition, newly-decorated user can solve this problem by wiring, but for renovated user, only one live wire
Controller is reached, will be unable to normally use when in face of this user.Single live wire product on the market is simultaneously few now, especially
It is, when single fire switch needs to access high power capacitive load at present, hundreds of amperes of surge current to occur in the moment that is powered,
The high current of moment can be acted on the small contact of relay, cause high temperature and contact material to shift, and finally, beaten by multiple
Fire, can cause contact adhesion, it is impossible to cutoff circuit, cause failure.
Utility model content
In view of this, it is necessary to a kind of single fire closed state power taking protection circuit is provided and the intelligence including the protection circuit is opened
Close, it can solve the problems, such as that surge current is for power taking device failure in the prior art.
A kind of single fire closed state power taking protection circuit, including：Anti-surge protection circuit, MOS power-supply circuits, relay and intelligence
Module；The anti-surge protection circuit is connected in parallel with MOS power-supply circuits, the anti-surge protection circuit and MOS power-supply circuits
Two ends be electrical connected with live wire and intelligent object respectively；The anti-surge protection circuit includes controllable silicon and photosensitive silicon two-way opened
Close, input and the live wire of the controllable silicon be electrical connected, output end is electrical connected with the relay, control end and the light
Quick silicon bilateral switch is electrical connected, and the photosensitive silicon bilateral switch is also electrical connected with intelligent object and MOS power-supply circuits, described
The output end of relay is connected to zero line with being electrical connected with load again.
Used as the further improvement of above-mentioned technical proposal, above-mentioned protection circuit also includes voltage-regulator diode and first resistor,
The negative pole of the voltage-regulator diode is electrical connected with live wire, and positive pole is grounded by the first resistor.
As the further improvement of above-mentioned technical proposal, the positive pole of the voltage-regulator diode also with the photosensitive silicon two-way opened
Pass is electrical connected, and when the relay is closed, the voltage-regulator diode is breakdown, and the partial pressure of the first resistor makes the light
Infrarede emitting diode conducting in quick silicon bilateral switch, so that the controlled silicon conducting is triggered, the live wire, controllable silicon, relay
Device and zero line constitute loop.
Used as the further improvement of above-mentioned technical proposal, above-mentioned protection circuit also includes the first triode and second resistance,
The emitter stage of first triode is electrical connected with the photosensitive silicon bilateral switch, grounded collector, and substrate is by described the
Two resistance eutral groundings are simultaneously electrical connected with the I/O ports of the intelligent object, the intelligent object after surge current is released completely,
The I/O ports are set to high-voltage flat so that first triode ends, the photosensitive silicon bilateral switch disconnects immediately, institute
Controllable silicon is stated to end in input voltage zero crossing.
As the further improvement of above-mentioned technical proposal, above-mentioned protection circuit also include operational amplifier, the first metal-oxide-semiconductor,
Second metal-oxide-semiconductor and 3rd resistor, the in-phase end of the operational amplifier and the input of the first resistor be electrical connected with from
The first resistor power taking pressure, the output pin 1 of the operational amplifier via after the 3rd resistor respectively with described first
The grid of metal-oxide-semiconductor and the second metal-oxide-semiconductor is electrical connected, the source ground of first metal-oxide-semiconductor and the second metal-oxide-semiconductor, a MOS
The drain electrode of pipe is electrical connected with the relay, and drain electrode and the live wire of second metal-oxide-semiconductor are electrical connected.
Additionally, the utility model embodiment also provides a kind of intelligent switch, it includes：Intelligent object, ON state power-supply circuit,
Closed state power-supply circuit and relay, the ON state power-supply circuit and closed state power-supply circuit input are electrical connected with live wire,
Output end is electrical connected with the relay.
The two ends of the anti-surge protection circuit and MOS power-supply circuits respectively with live wire and the electrical phase of the intelligent object
Even；The anti-surge protection circuit includes controllable silicon and photosensitive silicon bilateral switch, and the input of the controllable silicon is electrical with live wire
It is connected, output end is electrical connected with the relay, and control end is electrical connected with the photosensitive silicon bilateral switch, the photosensitive silicon
Two-way switch is also electrical connected with intelligent object and MOS power-supply circuits, and output end and the zero line of the relay are electrical connected.
Used as the further improvement of above-mentioned intelligent switch, it also includes voltage-regulator diode and first resistor, the voltage stabilizing two
The negative pole of pole pipe is electrical connected with live wire, and positive pole is grounded by the first resistor.
As the further improvement of above-mentioned intelligent switch, the positive pole of the voltage-regulator diode also with the photosensitive silicon two-way opened
Pass is electrical connected, and when the relay is closed, the voltage-regulator diode is breakdown, and the partial pressure of the first resistor makes the light
Infrarede emitting diode conducting in quick silicon bilateral switch, so that the controlled silicon conducting is triggered, the live wire, controllable silicon, relay
Device and zero line constitute loop.
Used as the further improvement of above-mentioned intelligent switch, it also includes the first triode and second resistance, the described 1st
The emitter stage of pole pipe is electrical connected with the photosensitive silicon bilateral switch, and grounded collector, base stage is grounded by the second resistance
And be electrical connected with the I/O ports of the intelligent object, the intelligent object after surge current is released completely, by the I/O
Port is set to high-voltage flat so that first triode ends, the photosensitive silicon bilateral switch disconnects immediately, the controllable silicon
End in input voltage zero crossing.
As the further improvement of above-mentioned intelligent switch, its also include operational amplifier, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor and
3rd resistor, the in-phase end of the operational amplifier and the input of the first resistor are electrical connected with from the first resistor
Power taking pressure, the output pin 1 of the operational amplifier via after the 3rd resistor respectively with first metal-oxide-semiconductor and second
The grid of metal-oxide-semiconductor is electrical connected, the source ground of first metal-oxide-semiconductor and the second metal-oxide-semiconductor, the drain electrode of first metal-oxide-semiconductor with
The relay is electrical connected, and drain electrode and the live wire of second metal-oxide-semiconductor are electrical connected.
According to above-mentioned technical proposal, due to introducing controllable silicon anti-surge protection circuit, closed state power taking moment starting protection
To bear inrush current shock, the device of power-supply circuit is protected not to be damaged；And protection circuit is while surge impact is born,
Power taking can be carried out, therefore energy can be provided to drive intelligent object work；Surge current closes antisurge protection electricity after disappearing
Road, normality power taking pattern is entered by intelligent object control.
Brief description of the drawings
Fig. 1 is the circuit module figure of the intelligent switch that embodiment 1 is provided.
Fig. 2 is the intelligent switch closed state power-supply circuit module map of embodiment 1.
Fig. 3 is the circuit diagram of the closed state power-supply circuit of embodiment 1.
Specific embodiment
Further to illustrate that the utility model is to realize technological means and effect that predetermined utility model purpose is taken,
Below in conjunction with accompanying drawing and preferred embodiment, to according to specific embodiment of the present utility model, structure, feature and its effect, in detail
Describe in detail bright as after.
Refering to Fig. 1, embodiment 1 provides a kind of intelligent switch.As shown in figure 1, the control circuit of the intelligent switch includes：Intelligence
Can module 10, ON state power-supply circuit 11, closed state power-supply circuit 12, relay switching circuit 13 and load 14.It is understood that
Intelligent switch herein refers to all Switch products, including simple intelligent switch, socket, socket etc..
In the present embodiment, ON state power-supply circuit 11 and closed state power-supply circuit 12 are used to provide electricity to intelligent object 10,
And taken carrying out closed state power taking pattern and ON state by the disconnection of control relay on-off circuit 13 and closure by intelligent object 10
The switching of power mode.When relay is closed, the power taking of closed state power-supply circuit 12, ON state power-supply circuit 11 does not work, and works as relay
During disconnection, closed state power-supply circuit 12 does not work, by the power taking of ON state power-supply circuit 11.Its input of ON state power-supply circuit 11 and L lines
(live wire) is connected, and output end is connected with power termination, then is connected to N lines (zero line).
Closed state power-supply circuit 12 its input is connected with L lines, and output end is connected with relay, finally connects power termination,
N lines are connected to again, and closed state power-supply circuit 12 includes that MOS power-supply circuits 121 and the antisurge in parallel with the MOS power-supply circuits 121 are protected
Protection circuit 122.Under the work of closed state power-supply circuit 12, anti-surge protection circuit 122 is controlled to be stopped by intelligent object 10,
So that the normal work of MOS power-supply circuits 121.
Intelligent object 10 receives, send wireless signal is communicated with the external world, and performs the signal control relay for receiving
The closure of device, disconnection.The signal is the control signal that relay switching circuit 13 is closed or disconnected.
Refering to Fig. 2, closed state power-supply circuit 12 may include：Controllable silicon 15 and photosensitive silicon bilateral switch 16.Controllable silicon 15 it is defeated
Enter end to be electrical connected with live wire, output end is electrical connected with relay, and control end is electrical connected with photosensitive silicon bilateral switch 16, light
Quick silicon bilateral switch 16 is also electrical connected with intelligent object 10 and MOS power-supply circuits 121, output end and the load of the relay
14 are electrical connected is followed by zero line.
When relay is closed, photosensitive silicon bilateral switch 16 detected signal before the startup of MOS power-supply circuits 121, and
Controllable silicon 15 is driven to turn on, therefore loop of the surge current directly from L lines, controllable silicon 15, relay, N lines composition is released, due to
Anode, cathode drop very little when controllable silicon 15 is turned on, therefore the voltage of MOS power-supply circuits 121 for being connected in parallel on its two ends cannot meet and open
Dynamic condition, after the completion of surge current is released, intelligent object 10 exports the signal for ending photosensitive silicon bilateral switch 16, when photosensitive
When silicon bilateral switch 16 ends, the conducting drive signal of controllable silicon 15 disappears, and ends, now L lines, MOS power-supply circuits 121, after
Electrical equipment, N lines composition conducting loop, make circuit normal work.
Refering to Fig. 3, it is a circuit diagram for specific embodiment of the shown closed state power-supply circuit 12 of Fig. 2.Closed state
Power-supply circuit 12 includes：Voltage-regulator diode D10, its negative pole is electrical connected with L lines, and positive pole is grounded via first resistor R6.Voltage stabilizing
The positive pole of diode D10 is also electrical connected with photosensitive silicon bilateral switch 16, and when relay is closed, voltage-regulator diode D10 is hit
Wear, the partial pressure of first resistor R6 turns on infrarede emitting diode in photosensitive silicon bilateral switch 16, so as to trigger controllable silicon 15 lead
Logical, live wire, controllable silicon 15, relay and zero line constitute loop.
Closed state power-supply circuit 12 also includes the first triode Q8, and its emitter stage is electrical connected with photosensitive silicon bilateral switch 16,
Grounded collector, base stage is grounded by second resistance R3 and is electrical connected with the I/O ports (CT3) of intelligent object 10；Intelligent mould
Block 10 is set to high-voltage flat after Antisurge current is released completely, by I/O ports (CT3) so that the first triode Q8 cut-offs, light
Quick silicon bilateral switch 16 disconnects immediately, controllable silicon 15 ends in input voltage zero crossing.
Closed state power-supply circuit 121 also includes operational amplifier LM358, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q3.Computing is put
The in-phase end of big device LM358 and the input of first resistor R6 are electrical connected with from first resistor R6 power taking pressures, operational amplifier
The output pin 1 of LM358 is electrical connected via the grid after 3rd resistor R7 respectively with the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q3,
The source ground of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q3, the drain electrode of the first metal-oxide-semiconductor Q1 is electrical connected with relay, the 2nd MOS
The drain electrode of pipe Q3 is electrical connected with L lines.
Closed state power-supply circuit 12 also includes the second triode Q4, the 4th resistance R8, the 5th resistance R14 and the 6th resistance
R10.The wherein grounded emitter of the second triode Q4, colelctor electrode is electrical connected with the first end of the 6th resistance R10, base stage and the
Second end of four resistance R8 is electrical connected, the first end of the 4th resistance R8 and first end, the 5th resistance of 3rd resistor R7
Second end of R14 is electrical connected, the first end ground connection of the 5th resistance R14.The first end of the 6th resistance R10 and the operation amplifier
The backward end of device LM358 is electrical connected.The backward end of the operational amplifier LM358 is also via the 7th resistance R9 and 3.3V power supplys
It is electrical connected.
Closed state power-supply circuit 121 may also include：First electric capacity C1, the second electric capacity C2, Transient Suppression Diode D7, the one or two
Pole pipe D6, the second diode D9 and the 3rd diode D8.First electric capacity C1 is in parallel with the first resistor R6.Second electric capacity C2's
Second end is grounded, and first end is electrical connected with 12V power supplys.The plus earth of Transient Suppression Diode D7, negative pole and the pole of voltage stabilizing two
The negative pole of pipe D10 connects.The negative electrode of the first diode D6 connects with L lines, the anode and the 2nd MOS of anode and the 3rd diode D8
The drain electrode of pipe Q3 connects, and the negative electrode of the second diode D9 connects with the anode of the first diode D6, and anode connects with 12V power supplys.
Closed state power-supply circuit may also include：7th resistance R1, the 8th resistance R2 and metal oxide piezo-resistance MOV, the
The first end of seven resistance R1 connects with the input (2) of L lines and controllable silicon 15, the pin of the second end and photosensitive silicon bilateral switch 16
6 connect.The first end of the 8th resistance R2 connects with the output end (3) of controllable silicon 15, the control end (1) of the second end and controllable silicon 15
And the pin 4 of photosensitive silicon bilateral switch 16 connects.The two ends of metal oxide piezo-resistance MOV respectively with L lines and relay phase
Connect.
The workflow of above-mentioned closed state power-supply circuit is as follows：
After relay is closed, because L line voltages are higher than puncturing 12V voltage-regulator diode D10 after 12V, and partial pressure is in first
Resistance R6, when first resistor R6 voltages reach photoelectrical coupler U6 inside GaAs infrarede emitting diode conduction voltage drop, touches
Hair controllable silicon 15 is turned on, and electric current is released from the loop of L lines, controllable silicon 15, relay, N lines composition.Now first resistor R6 loses
Current loop, causes pressure drop to drop at once, and after photoelectrical coupler U6 conduction voltage drops, the control pole of controllable silicon 15 loses conducting must
Condition is wanted, is ended in L line voltage zero crossings, so that voltage starts to be carried in voltage-regulator diode D10, first resistor R6 paths again
On, puncturing after voltage-regulator diode D10 form voltage on first resistor R6 again, so move in circles.
After anti-surge protection circuit 122 starts and ensures that surge current is released completely, intelligent object 10 is by its I/O port
CT3 is set to high level, ends PNP triode Q8, and photoelectrical coupler U6 ends and photosensitive silicon bilateral switch 16 is disconnected immediately,
The control pole of controllable silicon 15 loses conduction voltage drop, ends in input voltage zero crossing.Input voltage punctures after controllable silicon 15 ends
Voltage-regulator diode D10 and the partial pressure on first resistor R6, due to the power taking on first resistor R6 of operational amplifier LM358 in-phase ends
Pressure, when the in-phase end voltage of operational amplifier LM358 is higher than backward voltage, operational amplifier LM358 output pins 1 export height
Level is simultaneously connected to the first metal-oxide-semiconductor Q1, the grid of the second metal-oxide-semiconductor Q3, simultaneously turns on the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q3, this
When L lines, metal-oxide-semiconductor, relay form unique current loop, first resistor R6 voltage fallings simultaneously finally make operational amplifier LM358
In-phase end voltage is less than reverse terminal voltage, so that the output of operational amplifier LM358 output pins 1 low level makes the first metal-oxide-semiconductor Q1
And the second metal-oxide-semiconductor Q3 cut-off, L line voltages to transfer to puncture be carried on first resistor R6 after voltage-regulator diode D10 makes computing again
Amplifier LM358 in-phase ends voltage is higher than backward end, and the first metal-oxide-semiconductor Q1, second are made again after the output high level of output pin 1
Metal-oxide-semiconductor Q3 is turned on, and is so moved in circles.
Technical scheme according to more than, due to introducing controllable silicon anti-surge protection circuit, closed state power taking moment starts protects
Shield protects the device of power-supply circuit not to be damaged to bear inrush current shock；And protection circuit is while surge impact is born,
Power taking can also be carried out, therefore energy can be provided to drive intelligent object work；Surge current closes antisurge protection after disappearing
Circuit, normality power taking pattern is entered by intelligent object control.
The above, is only preferred embodiment of the present utility model, not makees any formal to the utility model
Limitation, although the utility model is disclosed as above with preferred embodiment, but is not limited to the utility model, Ren Heben
Art personnel, are not departing from the range of technical solutions of the utility model, when the technology contents using the disclosure above are made
A little change is modified to the Equivalent embodiments of equivalent variations, as long as being without departing from technical solutions of the utility model content, foundation
Any brief introduction modification, equivalent variations and modification that technical spirit of the present utility model is made to above example, still fall within this
In the range of utility model technical scheme.
Claims (10)
1. a kind of single fire closed state power taking protection circuit, it is characterised in that including：Anti-surge protection circuit, MOS power-supply circuits, after
Electrical equipment and intelligent object；
The anti-surge protection circuit is connected in parallel with MOS power-supply circuits, the anti-surge protection circuit and MOS power-supply circuits
Two ends are electrical connected with live wire and intelligent object respectively；The anti-surge protection circuit includes controllable silicon and photosensitive silicon two-way opened
Close, input and the live wire of the controllable silicon be electrical connected, output end is electrical connected with the relay, control end and the light
Quick silicon bilateral switch is electrical connected, and the photosensitive silicon bilateral switch is also electrical connected with intelligent object and MOS power-supply circuits, described
The output end of relay is electrical connected with zero line.
2. fire closed state power taking protection circuit as claimed in claim 1 single, it is characterised in that also including voltage-regulator diode and first
Resistance, negative pole and the live wire of the voltage-regulator diode are electrical connected, and positive pole is grounded by the first resistor.
3. fire closed state power taking protection circuit as claimed in claim 2 single, it is characterised in that the positive pole of the voltage-regulator diode is also
It is electrical connected with the photosensitive silicon bilateral switch, when the relay is closed, the voltage-regulator diode is breakdown, described first
The partial pressure of resistance turns on infrarede emitting diode in the photosensitive silicon bilateral switch, so that the controlled silicon conducting is triggered, institute
State live wire, controllable silicon, relay and zero line and constitute loop.
4. fire closed state power taking protection circuit as claimed in claim 2 single, it is characterised in that also including the first triode and second
Resistance, the emitter stage of first triode is electrical connected with the photosensitive silicon bilateral switch, grounded collector, and base stage passes through institute
State second resistance ground connection and be electrical connected with the I/O ports of the intelligent object, the intelligent object is let out completely in surge current
After putting, the I/O ports are set to high-voltage flat so that first triode cut-off, the photosensitive silicon bilateral switch are broken immediately
Open, the controllable silicon ends in input voltage zero crossing.
5. fire closed state power taking protection circuit as claimed in claim 4 single, it is characterised in that also including operational amplifier, first
Metal-oxide-semiconductor, the second metal-oxide-semiconductor and 3rd resistor, the in-phase end of the operational amplifier and the electrical phase of the input of the first resistor
First resistor power taking pressure described in Lian Yicong, the output pin 1 of the operational amplifier via after the 3rd resistor respectively with institute
The grid for stating the first metal-oxide-semiconductor and the second metal-oxide-semiconductor is electrical connected, the source ground of first metal-oxide-semiconductor and the second metal-oxide-semiconductor, described
The drain electrode of the first metal-oxide-semiconductor is electrical connected with the relay, and drain electrode and the live wire of second metal-oxide-semiconductor are electrical connected.
6. a kind of intelligent switch, it includes：Intelligent object, ON state power-supply circuit, closed state power-supply circuit and relay, the ON state
The input of power-supply circuit and closed state power-supply circuit is electrical connected with live wire, and output end is electrical connected with the relay；
The closed state power-supply circuit includes：Anti-surge protection circuit, MOS power-supply circuits；
The anti-surge protection circuit is connected in parallel with MOS power-supply circuits, the anti-surge protection circuit and MOS power-supply circuits
Two ends are electrical connected with live wire and the intelligent object respectively；The anti-surge protection circuit includes that controllable silicon and photosensitive silicon are two-way
Switch, input and the live wire of the controllable silicon be electrical connected, and output end is electrical connected with the relay, control end with it is described
Photosensitive silicon bilateral switch is electrical connected, and the photosensitive silicon bilateral switch is also electrical connected with intelligent object and MOS power-supply circuits, institute
The output end and zero line for stating relay are electrical connected.
7. intelligent switch as claimed in claim 6, it is characterised in that also including voltage-regulator diode and first resistor is described steady
The negative pole of diode is pressed to be electrical connected with live wire, positive pole is grounded by the first resistor.
8. intelligent switch as claimed in claim 7, it is characterised in that the positive pole of the voltage-regulator diode also with the photosensitive silicon
Two-way switch is electrical connected, and when the relay is closed, the voltage-regulator diode is breakdown, and the partial pressure of the first resistor makes
Infrarede emitting diode conducting in the photosensitive silicon bilateral switch, it is the live wire, controllable so as to trigger the controlled silicon conducting
Silicon, relay and zero line constitute loop.
9. intelligent switch as claimed in claim 7, it is characterised in that also including the first triode and second resistance, described
The emitter stage of one triode is electrical connected with the photosensitive silicon bilateral switch, grounded collector, and base stage is by the second resistance
It is grounded and is electrical connected with the I/O ports of the intelligent object, the intelligent object, will be described after surge current is released completely
I/O ports are set to high-voltage flat so that first triode ends, the photosensitive silicon bilateral switch disconnects immediately, described controllable
Silicon ends in input voltage zero crossing.
10. intelligent switch as claimed in claim 9, it is characterised in that also including operational amplifier, the first metal-oxide-semiconductor, second
Metal-oxide-semiconductor and 3rd resistor, the in-phase end of the operational amplifier and the input of the first resistor are electrical connected with from described
First resistor power taking pressure, the output pin 1 of the operational amplifier via after the 3rd resistor respectively with first metal-oxide-semiconductor
And second the grid of metal-oxide-semiconductor be electrical connected, the source ground of first metal-oxide-semiconductor and the second metal-oxide-semiconductor, first metal-oxide-semiconductor
Drain electrode is electrical connected with the relay, and drain electrode and the live wire of second metal-oxide-semiconductor are electrical connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621235914.7U CN206195342U (en) | 2016-11-17 | 2016-11-17 | Electric protection circuit and intelligence switch are got to single fire closed state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621235914.7U CN206195342U (en) | 2016-11-17 | 2016-11-17 | Electric protection circuit and intelligence switch are got to single fire closed state |
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| Publication Number | Publication Date |
|---|---|
| CN206195342U true CN206195342U (en) | 2017-05-24 |
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ID=58726740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621235914.7U Active CN206195342U (en) | 2016-11-17 | 2016-11-17 | Electric protection circuit and intelligence switch are got to single fire closed state |
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| Country | Link |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108832920A (en) * | 2018-05-16 | 2018-11-16 | 宁波公牛电器有限公司 | ON state power taking structure, electricity-fetching module, intelligent switch and multiposition intelligent double control switch |
| CN110554233A (en) * | 2019-10-12 | 2019-12-10 | 深圳市欧瑞博科技有限公司 | fault current detection device and method applied to intelligent switch |
| CN111342658A (en) * | 2020-03-05 | 2020-06-26 | 深圳市智米旺电子科技有限公司 | Single live wire electronic switch gets electric circuit topology and intelligent electronic switch who constitutes thereof |
| CN111491423A (en) * | 2020-03-27 | 2020-08-04 | 普联技术有限公司 | Single-fire switch circuit and single-fire switch device |
| CN111885788A (en) * | 2020-07-15 | 2020-11-03 | 深圳市欧瑞博科技股份有限公司 | On-state power taking circuit, intelligent single-live-wire switch module and intelligent single-live-wire switch |
-
2016
- 2016-11-17 CN CN201621235914.7U patent/CN206195342U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108832920A (en) * | 2018-05-16 | 2018-11-16 | 宁波公牛电器有限公司 | ON state power taking structure, electricity-fetching module, intelligent switch and multiposition intelligent double control switch |
| CN108832920B (en) * | 2018-05-16 | 2023-12-15 | 宁波公牛电器有限公司 | On-state electricity taking structure, electricity taking module, intelligent switch and multi-bit intelligent double-control switch |
| CN110554233A (en) * | 2019-10-12 | 2019-12-10 | 深圳市欧瑞博科技有限公司 | fault current detection device and method applied to intelligent switch |
| CN111342658A (en) * | 2020-03-05 | 2020-06-26 | 深圳市智米旺电子科技有限公司 | Single live wire electronic switch gets electric circuit topology and intelligent electronic switch who constitutes thereof |
| CN111342658B (en) * | 2020-03-05 | 2021-11-26 | 深圳市智米旺电子科技有限公司 | Single live wire electronic switch gets electric circuit topology and intelligent electronic switch who constitutes thereof |
| CN111491423A (en) * | 2020-03-27 | 2020-08-04 | 普联技术有限公司 | Single-fire switch circuit and single-fire switch device |
| CN111885788A (en) * | 2020-07-15 | 2020-11-03 | 深圳市欧瑞博科技股份有限公司 | On-state power taking circuit, intelligent single-live-wire switch module and intelligent single-live-wire switch |
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Address after: Nanshan District Xueyuan Road in Shenzhen city of Guangdong province 518055 No. 1001 Nanshan Chi Park A7 building 7 floor Patentee after: Shenzhen euribo Technology Co.,Ltd. Address before: Nanshan District Xueyuan Road in Shenzhen city of Guangdong province 518055 No. 1001 Nanshan Chi Park A7 building 7 floor Patentee before: SHENZHEN ORVIBO TECHNOLOGY Co.,Ltd. Address after: Nanshan District Xueyuan Road in Shenzhen city of Guangdong province 518055 No. 1001 Nanshan Chi Park A7 building 7 floor Patentee after: SHENZHEN ORVIBO TECHNOLOGY Co.,Ltd. Address before: Nanshan District Xueyuan Road in Shenzhen city of Guangdong province 518055 No. 1001 Nanshan Chi Park A7 building 7 floor Patentee before: ORVIBO, Inc. |