CN206132700U - Based on mesoporous graphite alkene field effect transistor biosensor - Google Patents
Based on mesoporous graphite alkene field effect transistor biosensor Download PDFInfo
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- CN206132700U CN206132700U CN201620943221.7U CN201620943221U CN206132700U CN 206132700 U CN206132700 U CN 206132700U CN 201620943221 U CN201620943221 U CN 201620943221U CN 206132700 U CN206132700 U CN 206132700U
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Abstract
The utility model relates to a based on mesoporous graphite alkene field effect transistor biosensor, including the stratum basale, locate mesoporous graphite alkene layer on the stratum basale, the interval is equipped with a set of source, drain electrode on the mesoporous graphite alkene layer, be equipped with the biological identification layer on the mesoporous graphite alkene layer between a set of source, the drain electrode, the top on biological identification layer is equipped with reference electrode, a set of source, drain electrode and it is used for the conducting channel that electrically conducts to form one between the biological identification layer, reference electrode with the sample solution plug -in connection is surveyed to quilt in the conducting channel, very big reduction biosensor's manufacturing cost, mesoporous graphite alkene field effect transistor biosensor has opened the band gap of graphite alkene, has great current switch and compares, and the biomolecule of minute quantity can both make the conductivity of graphite alkene conducting channel produce the response that is showing, has promoted the sensitivity that detects greatly.
Description
Technical field
This utility model is related to biosensor, more particularly to a kind of to pass based on mesoporous graphene field effect transistor is biological
Sensor.
Background technology
Graphene is a kind of new two-dimentional material with carbon element, shows excellent electrical properties, the nanometer electricity based on Graphene
Sub- device is considered as the excellent substitute of conventional semiconductors, but, zero band gap of intrinsic Graphene is to limit its deep application
Key factor, such as field-effect transistor is accomplished by the semi-conducting material of non-zero band gap；Therefore, Graphene band gap width tool is regulated and controled
It is significant.
With the development of graphene preparation technology, the Graphene for obtaining structural integrity is comparatively easy, but Graphene
Band gap width is almost nil or very little, be extremely restricted for preparing semiconductor device；At present, Graphene band gap width is regulated and controled
Degree has following several method：
（1）Physical；Physical carries out the regulation and control of Graphene band gap width mainly for Graphene physical dimension etc.；Be compared with
For the regulation and control Graphene band gap width method commonly used, especially by the physical dimension effect of Graphene band gap width is regulated and controled,
Research shows that the limited graphene nanobelt of unidimensional scale has certain band gap；At present, Graphene alkene nano belt is prepared, it is main
There are etching method and cutting CNT method, the former mainly uses etching method, such as photoengraving, beamwriter lithography, focused ion
Beam photoetching etc., by flake graphite alkene quasi-one-dimensional graphene nanobelt is carved into；The latter is mainly with the potassium permanganate of strong oxidizing property
CNT cutting is opened with sulphuric acid, plasma etching, electrochemical method etc., forms graphene nanobelt；Can be with graphite
On alkene piece, form mesoporous, be graphene nanobelt between hole, be limited Graphene unidimensional scale, so as to open band gap；Additionally, sharp
Can also cause the generation of Graphene band gap with impact of the substrate to Graphene；
（2）Chemical doping method；Chemical doping method is divided into impurity and surface adsorption doping；Graphene passes through chemical gaseous phase
Deposition process can be prepared with large area, in preparation process or in post processing, by introducing different reaction sources, can make stone
Part carbon atom in black alkene lattice structure is replaced by other atoms, forms impurity；
（3）Number of plies control methods；Single-layer graphene is difficult to meet the application requirement in some fields, needs development to prepare high-quality
The preparation technology of the few layer of amount and multi-layer graphene；For example, the native band gap of single-layer graphene is zero, is had very in semiconductor applications
Big application limitation；There are some researches show, the bilayer graphene of AB stacking provisions can be one in the presence of extra electric field
Determine to produce continuously adjustable band gap in scope, although for Growing Double-Layer Graphene has done numerous studies, but due to growth
Bilayer graphene cannot accuracy controlling, or for random layer stacking provisions, or the number of plies is uneven, there is more three layer or monolayer region；
How controlling stacking provisions, improving number of plies homogeneity is that current CVD growth is double-deck and multi-layer graphene studies the common difficulty for facing
Topic.
In sum, by Physical, the physical dimension of Graphene is designed regulating and controlling with gaps, simple possible；But, due to
The restriction of photoetching technique, etching method prepares the width of graphene nanobelt, is extremely limited.In addition, cutting CNT,
The homogeneity of graphene nanobelt cannot be ensured, extensive preparation is also unsuitable for；It is to carry out band gap to be formed on Graphene mesoporous
The feasible program of regulation and control, can regulate and control the energy gap of Graphene by the size of mesoporous pore size；Patent 201210032772.4 is sharp
Use anodised aluminium（AAO）Template, prepares graphene nano hole array, but AAO template making techniques are complex, including high-purity
The techniques such as aluminum pre-treatment, once oxidation, secondary oxidation, through hole, are to ensure that the pore size of AAO templates is different with pitch of holes, are needed
Control Arrays Aluminum Films in Acid Solution, concentration, temperature, oxidizing potential and time etc.；Relative to AAO templates, soft template is typically all held very much
Easily construct, it is easy to operate without the need for complicated equipment, it is with low cost etc., cause the extensive concern of people；California, USA university Lip river China fir
The section edge cutting edge of a knife or a sword in rock branch school etc. has prepared mesoporous Graphene by block polymer soft template, successfully opens the with of Graphene
Gap, and the purpose of regulation and control Graphene with gaps can be reached by adjusting pitch of holes；It is well known that Graphene has huge ratio
Surface area, block polymer soft template is covered on Graphene, can increase graphenic surface cleaning difficulty, graphenic surface meeting
The problems such as having polymer residue, impact field-effect transistor performance.
Utility model content
This utility model purpose is to provide a kind of based on mesoporous graphene field effect to overcome the deficiencies in the prior art
Transistor biosensor, with higher current on/off ratio, effectively can detect to the biomolecule of super low loading.
To reach above-mentioned purpose, the technical solution adopted in the utility model is：One kind is brilliant based on mesoporous graphene field effect
Body pipe biosensor, including basal layer, the mesoporous graphene layer on the basal layer, on the mesoporous graphene layer between
Every one group of source, drain electrode is provided with, the described one group mesoporous graphene layer between source, drain electrode is provided with bio-identification layer, described
It is provided with reference electrode above bio-identification layer, one group of source, forms one between drain electrode and the bio-identification layer and be used for
Conductive conducting channel, the reference electrode is connected with the sample solution plug-in type in the conducting channel.
Further improved as this utility model, the basal layer is Si/SiO2Basal layer.
Further improved as this utility model, the mesoporous graphene layer is provided with Jie of multiple uniform intervals arrangements
Hole.
It is further improved as this utility model, one group of source, electric leakage extremely 5-10nmCr and 30-50nmAu structures
Into.
Further improved as this utility model, the conducting channel is a length of 10-20 μm, a width of 20-30 μm.
Due to the utilization of above-mentioned technical proposal, this utility model has compared with prior art following advantages：
This utility model scheme provides a kind of based on mesoporous graphene field effect transistor biosensor, different pore size
Mesoporous Graphene, reaches the purpose of regulation and control Graphene energy gap；With the active oxy radical that oxygen plasma etch Graphene is formed,
Bioactive molecule can be connected；Avoid AuNPs, glutaraldehyde, pyrene butanoic acid, 1- hydroxysuccinimide eater -1- pyrene butanoic acid etc. often
With the use of bridging agent, the manufacturing cost of biosensor is greatly reduced；Mesoporous graphene field effect transistor is biological to be passed
Sensor, opens the with gaps of Graphene, and with larger current on/off ratio, minimal amount of biomolecule leads can Graphene
The electrical conductivity of electric raceway groove produces significant response, greatly improves the sensitivity of detection.
Description of the drawings
Technical solutions of the utility model are described further below in conjunction with the accompanying drawings：
Accompanying drawing 1 is mesoporous graphene-structured schematic diagram；
Accompanying drawing 2 is based on mesoporous graphene field effect transistor biosensor structure schematic diagram for a kind of；
The test of the testing equipment of accompanying drawing 3 is based on mesoporous graphene field effect transistor biosensor result schematic diagram.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment the utility model is described in further detail.
It is described in the utility model a kind of biological based on mesoporous graphene field effect transistor as shown in accompanying drawing 1,2,3
In sensor, using micro-nano technology technique, the field-effect transistor with mesoporous Graphene 11 as conducting channel is made；One kind is based on
Mesoporous graphene field effect transistor biosensor include basal layer 21, the mesoporous graphene layer 22 on basal layer 21,
One group of source electrode 23, drain electrode 24, Jie between one group of source electrode 23, drain electrode 24 are interval with mesoporous graphene layer 22
Hole graphene layer 22 is provided with bio-identification layer 25, and the top of bio-identification layer 25 is provided with reference electrode 26, one group of source electrode 23,
One is formed between drain electrode 24 and bio-identification layer 25 is used for conductive conducting channel, tested in reference electrode and conducting channel
Sample solution plug-in type connects；Wherein source electrode, electric leakage extremely 5-10nmCr and 30-50nmAu are constituted, a length of 10- of conducting channel
20 μm, a width of 20-30 μm, using liquid grid technique, Ag/AgCl electrodes are inserted in sample solution as reference electrode；Oxygen
During plasma etching Graphene, in graphene edge oxy radical is formed（Such as hydroxyl, epoxy radicals, carboxyl, carbonyl）, by carboxylic
Base reagent（Monoxone containing 50-200mmol/L, the sodium hydroxide solution of 100-500mmol/L）It is covered in mesoporous Graphene
On, 2-4h is incubated at room temperature, first rinsed with 0.1-0.5mmol/L hydrochloric acid, then deionized water is rinsed repeatedly, turns oxy radical
It is changed into-COOH, vacuum drying oven drying, and with NHS/EDC activation-COOH；0.1 × PBS buffer solution with pH=7.4 as solvent,
Compound concentration is the PSA of 10-30 μ g/mL（Prostate specific antigen）Antibody-solutions, stand after 2-5h, with pH=7.4's under room temperature
0.1 × PBS solution, deionized water rinsing are clean；1-2h in the ethanolamine solutions of 50-100mM is placed at room temperature, prevents non-spy
Opposite sex absorption；Subsequently with the 0.1 × PBST of pH=7.4（Tween20 volume fractions are the not connected biology of 0.05%, Tween20 closings
The Graphene of identification molecule）Solution is rinsed well, N2Dry up, compound concentration is 0,10,100,1000fg/mL PSA, using certainly
The portable detection equipment of main research and development detects that testing conditions are V to itDS=1V, Vg=0.1V, test result is shown in accompanying drawing 3.
The above is only concrete application example of the present utility model, any limit is not constituted to protection domain of the present utility model
System；All employing equivalents or equivalence replacement and the technical scheme that formed, all fall within this utility model rights protection scope it
It is interior.
Claims (5)
1. it is a kind of to be based on mesoporous graphene field effect transistor biosensor, it is characterised in that including basal layer, located at described
Mesoporous graphene layer on basal layer, is interval with one group of source, drain electrode, one group of source, leakage on the mesoporous graphene layer
Mesoporous graphene layer between electrode is provided with bio-identification layer, and above the bio-identification layer reference electrode is provided with, described
One group of source, one formed between drain electrode and the bio-identification layer be used for conductive conducting channel, the reference electrode with it is described
Sample solution plug-in type connection in conducting channel.
2. according to claim 1 a kind of based on mesoporous graphene field effect transistor biosensor, it is characterised in that
The basal layer is Si/SiO2Basal layer.
3. according to claim 1 a kind of based on mesoporous graphene field effect transistor biosensor, it is characterised in that
The mesoporous graphene layer is provided with the mesoporous of multiple uniform intervals arrangements.
4. according to claim 1 a kind of based on mesoporous graphene field effect transistor biosensor, it is characterised in that
One group of source, electric leakage extremely 5-10nmCr and 30-50nmAu are constituted.
5. according to claim 1 a kind of based on mesoporous graphene field effect transistor biosensor, it is characterised in that
The conducting channel is a length of 10-20 μm, a width of 20-30 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201620943221.7U CN206132700U (en) | 2016-08-25 | 2016-08-25 | Based on mesoporous graphite alkene field effect transistor biosensor |
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| CN201620943221.7U CN206132700U (en) | 2016-08-25 | 2016-08-25 | Based on mesoporous graphite alkene field effect transistor biosensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106198674A (en) * | 2016-08-25 | 2016-12-07 | 无锡盈芯半导体科技有限公司 | A kind of mesoporous Graphene preparation technology and based on mesoporous graphene field effect transistor biosensor |
| CN111707724A (en) * | 2020-07-03 | 2020-09-25 | 深圳市溢鑫科技研发有限公司 | Vertical graphene glucolase working electrode, preparation method and biosensor |
-
2016
- 2016-08-25 CN CN201620943221.7U patent/CN206132700U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106198674A (en) * | 2016-08-25 | 2016-12-07 | 无锡盈芯半导体科技有限公司 | A kind of mesoporous Graphene preparation technology and based on mesoporous graphene field effect transistor biosensor |
| CN106198674B (en) * | 2016-08-25 | 2019-02-15 | 泉州市金太阳电子科技有限公司 | A kind of mesoporous graphene preparation process and it is based on mesoporous graphene field effect transistor biosensor |
| CN111707724A (en) * | 2020-07-03 | 2020-09-25 | 深圳市溢鑫科技研发有限公司 | Vertical graphene glucolase working electrode, preparation method and biosensor |
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Effective date of registration: 20170905 Address after: 362000, 1303, hi tech electronic information industrial park, Jiangnan South Ring Road, Licheng District, Fujian, Quanzhou Patentee after: Quanzhou Golden Sun Electronic Co., Ltd. Address before: 0209, room 0211, building 214000, building 1, No. 311, Yan Xin Road, Huishan Economic Development Zone, Jiangsu, Wuxi Patentee before: WUXI YINGXIN SEMICONDUCTOR TECHNOLOGY CO., LTD. |