CN206118127U - A linear LED drive circuit for silicon controlled rectifier - Google Patents
A linear LED drive circuit for silicon controlled rectifier Download PDFInfo
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- CN206118127U CN206118127U CN201621180867.0U CN201621180867U CN206118127U CN 206118127 U CN206118127 U CN 206118127U CN 201621180867 U CN201621180867 U CN 201621180867U CN 206118127 U CN206118127 U CN 206118127U
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- led
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- drive circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Abstract
The utility model provides a linear LED drive circuit for silicon controlled rectifier, the utility model relates to a LED drive circuit technical field, solve prior art open constantly overshoot the scintillation and when critical voltage reaches the technical problem such as switch scintillation that cause of switching channel repeatedly. The utility model discloses it is main including power, silicon controlled rectifier switch circuit and rectifier bridge, constitute silicon controlled rectifier power supply circuit, integrating circuit, including power supply potential point and sample current potential point that the magnitude of voltage reduces in proper order, the rectifier bridge output is connected to power supply potential point, drive circuit, including the on -off control treatment circuit, the on -off control treatment circuit is released a switch transistor of passageway and the 2nd switch transistor of drive circuit LED passageway through sample current potential point voltage control drive circuit and is switched on or end, the on -off control treatment circuit, including the comparator that stagnates back, the comparator input that stagnates back is connected to the current potential point of taking a sample, the LED lamp, its maximum potential point connection rectifier bridge output. The utility model is used for the LED drive circuit design.
Description
Technical field
The present invention relates to LED drive circuit technical field, and in particular to a kind of linear LED for controllable silicon light modulation drives
Circuit.
Background technology
In LED linear driving structure, the circuit for controllable silicon light modulation is common as shown in figure 12.Controllable silicon leadage circuit
Typically single leadage circuit all the way, releases via BLD passages, and LED current then passes through another passage.Work as controllable silicon
After switch is opened, because the voltage above busbar voltage is not high enough, LED channel can not be turned on, and now BLD passages are conductings,
For providing the maintenance electric current of reverse-blocking tetrode thyristor.As the angle of flow of reverse-blocking tetrode thyristor increases, after busbar voltage is sufficiently high,
LED channel begins to turn on.IC inside can typically arrange that VREF1 voltage ratio VREF2 voltages are low, therefore when the electric current foot of LED channel
Enough big, after CS voltage ratios VREF1 height, BLD paths of releasing will be closed passively, and follow-up LED current will be by LED channel control.
The linear LED driving structures of controllable silicon light modulation are traditionally used for, controllable silicon maintains current circuit to control with LED constant current
The switching of circuit, is passively changed by the height of busbar voltage, and busbar voltage is higher than LED voltage, and LED paths are opened naturally
Open, while controllable silicon maintains current circuit passively to close；Busbar voltage is less than LED voltage, then LED paths are closed naturally, together
When controllable silicon maintain current circuit will passively open.
The fluctuation of busbar voltage, will easily lead to controllable silicon and maintains between electric current and LED constant-current control circuit repeatedly
Open/close, be finally embodied in LED and just can be appreciated that the unstable phenomenon of lamp, be embodied in when reverse-blocking tetrode thyristor is opened
In a flash, LED can moment it is bright under knock out again, when rotation SCR switch dimming, in LED somewhat open stages, it is easy to
There is LED flicker.
For this Linear Driving structure of controllable silicon light modulation, advantage is that circuit is simple, but has obvious shortcoming at two：
1) open in a flash in reverse-blocking tetrode thyristor, due to controllable silicon characteristic, flashy mistake is had above busbar voltage
The reason for rushing voltage, and be used for the BLD pathway reactions speed and relieving capacity for providing controllable silicon maintenance electric current, causes energy not
Can release in time, now LED channel meeting passive open, LED starts to light.After energy has been released, LED can be knocked out again, BLD
Passage normally provides maintenance electric current.User can be so caused to open in a flash, it is seen that lamp is glittering rear once and knocks out.
2) during controllable silicon light modulation, when in leakage path BLD with LED channel transfer process, due to bus
Voltage it is unstable, path and the LED channel of releasing may open and close repeatedly, can be appreciated that the phenomenon that LED flashes.
For the multisection type Linear Driving structure of controllable silicon light modulation, above-mentioned same problem is also faced.
The content of the invention
For above-mentioned prior art, present invention aim at providing a kind of linear LED for controllable silicon light modulation drives electricity
Road, solves prior art in the switch that the overshoot of start-up time flashes and repeatedly switching channel is caused when critical voltage reaches
The technical problems such as flicker.
To reach above-mentioned purpose, the technical solution used in the present invention is as follows：
A kind of linear LED drive circuit for controllable silicon light modulation, including
Power supply, magnetic silicon controlled switch circuit and rectifier bridge, constitute controllable silicon driving power supply circuit；
Integrating circuit, including the power supply potential point that reduces successively of magnitude of voltage and sampling potential point, rectification bridge output end connection
To power supply potential point；
Drive circuit, including switch control rule process circuit, switch control rule process circuit is by the point voltage control of sampling current potential
The first switch transistor of drive circuit leakage path and the second switch transistor turns of drive circuit LED channel or cut-off；
Described switch control rule process circuit, including hysteresis loop comparator, hysteresis loop comparator input is connected to sampling current potential
Point；
LED, its maximum potential point connects rectification bridge output end and by the second switch transistor controls of drive circuit.
In such scheme, described integrating circuit, including magnitude of voltage reduce successively power supply potential point, sampling potential point and
Earth point, three potential points pass sequentially through the divider resistance being connected with rectification bridge output end and arrange, and sampling potential point is also connected with
There is electric capacity, the electric capacity other end is connected to earth point.
In such scheme, described first switch transistor or second switch transistor, from NMOS FETs, second
The potential minimum point of the drain electrode connection LED of switching transistor.
In such scheme, described drive circuit, its leakage path or LED channel include an operational amplifier；
The in-phase input end of the operational amplifier is respectively equipped with different reference voltages, and its inverting input detects respectively
The source voltage of one switching transistor and second switch transistor detects the source voltage of second switch transistor, and its
Output end is respectively connecting to the grid of the grid of first switch transistor and second switch transistor；
The maximum potential point and its source electrode of the drain electrode connection LED of the first switch transistor is connect by load resistance
Ground, constitutes leakage path；
The source electrode of described second switch transistor is constituted also by the load resistance or another load resistance ground connection
LED channel.
In such scheme, described LED, using LED string or LED array.
In such scheme, described drive circuit also includes
3rd switching transistor, its drain electrode connects voltage relatively lower than LED maximum potential point voltage and is relatively higher than LED
The LED intermediate potential point of potential minimum point voltage, its source electrode is grounded by the load resistance or independent load resistance；
Intergrade operational amplifier, its output end is connected to the grid of the 3rd switching transistor, the intergrade computing
The in-phase input end of amplifier is provided with another reference voltage, and the source electrode electricity of inverting input detection second switch transistor
During the source voltage of the 3rd switching transistor of pressure or detection, the 3rd switching transistor and intergrade operational amplifier are constituted
Intercaste leakage path.
In such scheme, the intergrade leakage path, including at least two intergrade leakage paths, described at least two
Intergrade leakage path, it is permanent that the operational amplifier being connected with second switch transistor, second switch transistor collectively forms LED
Flow control circuit.
Compared with prior art, beneficial effects of the present invention：
Due to the presence of sample integration circuit, rushing burr voltage on controllable silicon unlatching moment will effectively be filtered, and be integrated
Voltage LN afterwards will be than relatively low, and control circuit can only allow controllable silicon to maintain current circuit conducting, and LED circuit is all the time in closing
Closed state, not can be appreciated that the flashy glittering phenomenon of unlatching；
When controllable silicon rotates to the border of LED paths unlatching, because switch control rule process circuit has hysteresis to compare, LED
The opening point and closing point of lamp is different, so also avoids the on-off phenomenon repeatedly being likely to occur in handoff procedure
(lamp scintillation), dodges in the switch that the overshoot of start-up time flashes and repeatedly switching channel is caused when critical voltage reaches
It is bright；
The present invention will make LED drive circuit in the case of the complexity for not increasing circuit, realize excellent thyristor regulating
Light effect, in controllable silicon unlatching and dimming process, LED does not have scintillation, and dimming effect will be gentler.
Description of the drawings
Fig. 1 is the basic circuit principle schematic of the present invention；
Fig. 2 is the integrating circuit schematic diagram in the embodiment of the present invention；
Fig. 3 is another kind of integrating circuit schematic diagram in the embodiment of the present invention；
Fig. 4 is the drive circuit module schematic diagram of many intergrades in the embodiment of the present invention；
Fig. 5 is the drive circuit module schematic diagram of multiple load resistances in the embodiment of the present invention；
Fig. 6 is the drive circuit module schematic diagram of many intergrades of correspondence LED string in the embodiment of the present invention；
Fig. 7 is the drive circuit module schematic diagram of single intergrade in the embodiment of the present invention；
Fig. 8 is different potentials point voltage change schematic diagram of the present invention；
Fig. 9 is voltage change schematic diagram in circuit of the present invention in correspondence Fig. 7 embodiments；
Figure 10 is the sense of current when intergrade leakage path of circuit of the present invention in correspondence Fig. 7 embodiments works；
Figure 11 is the sense of current when LED channel of circuit of the present invention in correspondence Fig. 7 embodiments works；
Figure 12 is prior-art illustration.
Specific embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine by any way.
Below in conjunction with the accompanying drawings the present invention will be further described：
Embodiment 1
Main body circuit of the present invention include busbar voltage sample integration circuit, bus voltage signal process circuit,
Controllable silicon maintains current circuit, LED constant-current control circuit.
As shown in figure 1, R1/R2/C1 composition busbar voltage sample integration circuits.The circuit major function is by busbar voltage
After partial pressure, integrated by RC, obtain a stable DC voltage and send into LN ends, signal LN will be used in control controllable silicon and maintain
The switching control of current circuit and LED constant-current control circuit.Can be to be prevented effectively from controllable silicon to open using the benefit of integrating circuit
To open rush on flashy LED caused by voltage and open by mistake and open, it is readily seen that the glittering phenomenon of lamp.Simultaneously in dimming process, if
Process without integrating circuit, LED also occurs the unstable phenomenon of flicker.
Integrating circuit can also adopt the implementation of following Fig. 2, Fig. 3, and application circuit will be more simplified.The integration electricity of Fig. 2
Realize inside IC, by the signal of R1/R2 resistance samplings, be processed into direct current signal in IC internal integrals and reuse in road.Fig. 3's
Integrating circuit is that sample resistance R1/R2 is also dispensed, because BLD ends are also busbar voltage, this voltage will be processed inside IC
Sample integration, obtains a DC voltage LN and reuses.
Through the signal LN of Integral Processing, in sending into switch control rule process circuit.The module mainly by LN signals with it is interior
Portion's reference voltage is made comparisons, to determine the unlatching/closing of BLD and LED paths.When sample integration voltage LN is less than reference voltage
During VREF, signal CTR0 opens in BLD paths, and controllable silicon maintains electric current to be provided by BLD paths.Now signal CTR1 leads to LED
Road is closed, and LED is not turned on, even if busbar voltage has moment higher voltage, LED is also not in instant igniting phenomenon.When adopting
When sample integral voltage LN voltages are higher than reference voltage VREF, signal CTR0 LED paths is opened BLD path blockades, signal CTR1
Open, LED is opened.The comparison of sample integration voltage LN and reference voltage VREF can be realized using hysteresis loop comparator, can effectively kept away
Phenomenon is frequently opened/closed to the BLD passages for exempting to be caused because of interference signal with LED channel, and then avoids LED scintillation.
When LED channel has n, switch control rule process circuit compares LN with multiple reference voltage VREFn, produces multiple
Control signal CTRn.As shown in figure 4, VREF1～VREFn voltages are raised successively, and when LN voltages are less than VREF1, control signal
CTR0 opens in BLD passages, and CTR1～CTRn closes LED1～LEDn.When LN voltages are less than VREF2 higher than VREF1,
CTR0 LED1 passages is opened BLD pathway closures, CTR1, and CTR2～CTRn closes LED2～LEDn.With LN voltage liters
Height, each passages of LED will be opened successively.BLD passages and LED1～LEDn passages, when one of conducting is opened, other passages
It is turned off, there are no two passages while opening phenomenon.When LN voltages change from high to low, each passage unlatching/closing sequence is then
It is just contrary.
Controllable silicon maintains current circuit to be made up of NMOS0/OPAMP0/RCS, and internal reference voltage VCS0 is electric with outer samples
Resistance RCS determines that controllable silicon maintains current value size, I BLD=VCS0/RCS.The setting resistance of generally controllable silicon maintenance electric current can
Shared with arranging resistance with LED current, it is also possible to be used alone and resistance is set, as shown in Figure 5.Its reference voltage VCS0 can compare
LED reference voltages are high, it is also possible to low.
LED constant-current control circuit is made up of NMOS1/OPAMP1/RCS, internal reference voltage VCS1 and outer samples resistance
RCS determines LED current value size, ILED=VCS1/RCS.When LED paths are multichannels, as shown in fig. 6, each section of LED current value
Determined by the reference voltage of each section of OPAMP, the setting for being typically referenced to voltage VCS1～VCSn is ascending.
By taking mono- practical application of Fig. 7 as an example, the circuit is used for controllable silicon light modulation, and LED driving structures are 2 sections of Linear Drivings.
The core component of the present invention is busbar voltage sample integration circuit, switch control rule process circuit, controllable silicon maintenance electric current electricity
Road, LED constant-current control circuit.
Busbar voltage sample integration circuit is made up of R1/R2/C1, and busbar voltage partial pressure is obtained one by R1/R2 divider resistances
The low-voltage signal LN that individual suitable IC is processed.It is the AC letters for reducing certain phase angle through the bus voltage signal of reverse-blocking tetrode thyristor
Number, need after C1 is filtered, to obtain the stable direct current signal LN of comparison.The amplitude size of LN, represents through controllable
The phase angle size of busbar voltage after silicon.Fig. 8 show 110V/AC applications, and a LN electricity is obtained after sample integration circuit
The waveform of pressure.Fig. 2/Fig. 3 sample integration circuits, are similarly and obtain a low-voltage dc signal LN, and specific implementation process will no longer
Narration.
The low-voltage dc signal LN for obtaining, through switch control rule process circuit, makees with internal reference voltage VREF1/VREF2
Compare, and then obtain control signal CTR0/CTR1/CTR2 and go to control the state of NMOS0/NMOS1/NMOS2.At switch control rule
In reason circuit, VREF1/VREF2 can be pre-set inside IC, VREF1<VREF2.When controllable silicon just starts to open, by
Smaller in the angle of flow, the energy ratio for passing over is less, and the amplitude of busbar voltage is also smaller.Voltage LN after integration
It is also that than relatively low, now LN voltages are less than VREF1 voltages.Output logic control signal CTR0 will make controllable silicon maintain electric current electricity
Road keeps work, NMOS0 conductings, controlled maintenance electric current that controllable silicon will be made to keep normal conducting state.Meanwhile, CTR1/
CTR2 will close will LED constant-current control circuit, and NMOS1/NMOS2 is all in closed mode.In the case, even if controllable silicon is opened
Open moment have on rush voltage, LED also will not be opened moment, effectively avoid controllable silicon open moment flashing light phenomenon.With
The increase of thyristor operating angle, LN voltages also can be raised.After LN voltages are higher than VREF1, while LN is still below VREF2.Here
Under state, CTR0 will change state, and then controllable silicon maintains current circuit to close, and NMOS0 is closed.Meanwhile, CTR1 also changes shape
State, makes LED1 channels operations, first paragraph LED to turn on.And now CTR2 will control LED2 passages and be closed.When can
The control silicon angle of flow continues to increase, and LN voltages continue to raise, and after VREF2, CTR1 state changes close LED channel.Together
When, CTR2 states also change, and make LED2 channels operations, first paragraph LED and second segment LED keep it turned on shape by LED2 passages
State.Said process is opened to rotating to during maximum conduction angle from controllable silicon, the logic change procedure of switch control rule process.
When controllable silicon is gradually circled round reduction by maximum conduction angle, change procedure will just in turn.The comparison of LN and VREF1/VREF2
Will be using hysteresis loop comparator, therefore during LN is reduced, comparison point is by the comparison point of slightly below LN uphill process.R1/R2/C1
Sample integration circuit, noise signal will be effectively filtered out, the hysteresis in Simultaneous Switching control process circuit compares, further avoids
The logic of the CTRx that clutter causes repeatedly changes.Such process, can be prevented effectively from dimming process, cut in passage
When changing critical, the scintillation for easily occurring.Fig. 9 will show controllable silicon light modulation by minimum angle to maximum angular and the process of convolution
In, the control change procedure of circuit.
Controllable silicon maintains electric current to be controlled by OPAMP0/NMOS0/RCS circuits, after OPAMP normal works, by OPAMP
Negative feedback control, flow through the maintenance electric current IBLD=VCS0/RCS of NMOS.Smaller in thyristor operating angle, busbar voltage is not
When enough high, it is supplied to controllable silicon to maintain electric current by this circuit, to ensure that controllable silicon being capable of normal work.The unlatching of this circuit
With closing, determined by CTR0.
LED constant-current control circuit is made up of OPAMP1/NMOS1/OPAMP2/NMOS2/RCS, for single hop linear applications,
The combination of one group of OPAMP and NMOS is only needed, if necessary to N sections, then N groups is needed.Only show 2 sections of LED applications in this circuit, when
During LED1 channel conductives, electric current from bus positive pole through first group of LED to LED1 passage, red line path as shown in Figure 10, LED's
Electric current ILED=VCS1/RCS.When LED2 channel conductives, electric current from bus positive pole through first group of LED to second group of LED again
To LED2 passages, blue line path as shown in figure 11, the electric current ILED=VCS2/RCS of LED.For obtain preferable power factor (PF) and
THD, usual VCS1<VCS2.The electric current of LED is after the control of OPAMP, and constant current stability is preferable, as long as meeting NMOS work
In saturation region, the electric current of LED does not change with busbar voltage and changes.
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any
Technician skilled in the art the invention discloses technical scope in, the change or replacement that can be readily occurred in, all should
It is included within the scope of the present invention.
Claims (7)
1. a kind of linear LED drive circuit for controllable silicon light modulation, it is characterised in that include
Power supply, magnetic silicon controlled switch circuit and rectifier bridge, constitute controllable silicon driving power supply circuit；
Integrating circuit, including the power supply potential point that reduces successively of magnitude of voltage and sampling potential point, rectification bridge output end is connected to electricity
Source electric potential point；
Drive circuit, including switch control rule process circuit, switch control rule process circuit is driven by the point voltage control of sampling current potential
The first switch transistor of circuit leakage path and the second switch transistor turns of drive circuit LED channel or cut-off；
Described switch control rule process circuit, including hysteresis loop comparator, hysteresis loop comparator input is connected to sampling potential point；
LED, its maximum potential point connects rectification bridge output end and by the second switch transistor controls of drive circuit.
2. a kind of linear LED drive circuit for controllable silicon light modulation according to claim 1, it is characterised in that described
Integrating circuit, including power supply potential point, the sampling potential point and earth point that magnitude of voltage is reduced successively, three potential points are successively
Arranged by the divider resistance being connected with rectification bridge output end, sampling potential point is also associated with electric capacity, and the electric capacity other end is connected to
Earth point.
3. a kind of linear LED drive circuit for controllable silicon light modulation according to claim 1, it is characterised in that described
First switch transistor or second switch transistor, from NMOS FETs, the drain electrode connection LED of second switch transistor
The potential minimum point of lamp.
4. a kind of linear LED drive circuit for controllable silicon light modulation according to claim 3, it is characterised in that described
Drive circuit, its leakage path or LED channel include an operational amplifier；
The in-phase input end of the operational amplifier is respectively equipped with different reference voltages, and its inverting input detects that respectively first opens
The source voltage for closing transistor and second switch transistor or the source voltage for detecting second switch transistor, and it exports
End is respectively connecting to the grid of first switch transistor and the grid of second switch transistor；
The maximum potential point and its source electrode of the drain electrode connection LED of the first switch transistor is grounded by load resistance, structure
Into leakage path；
The source electrode of described second switch transistor constitutes LED also by the load resistance or another load resistance ground connection
Passage.
5. a kind of linear LED for controllable silicon light modulation according to any one claim in claim 4 drives electricity
Road, it is characterised in that described LED, using LED string or LED array.
6. a kind of linear LED drive circuit for controllable silicon light modulation according to claim 5, it is characterised in that described
Drive circuit, also include
3rd switching transistor, drain electrode connection voltage is relatively lower than LED maximum potential point voltage and to be relatively higher than LED minimum for it
The LED intermediate potential point of current potential point voltage, its source electrode is grounded by the load resistance or independent load resistance；
Intergrade operational amplifier, its output end is connected to the grid of the 3rd switching transistor, the intergrade operation amplifier
The in-phase input end of device is provided with another reference voltage, and the source voltage of inverting input detection second switch transistor or
Person detects the source voltage of the 3rd switching transistor, and the 3rd switching transistor and intergrade operational amplifier constitute intergrade
Leakage path.
7. a kind of linear LED drive circuit for controllable silicon light modulation according to claim 6, it is characterised in that described
Intergrade leakage path, including at least two intergrade leakage paths, at least two intergrades leakage path is opened with second
Close transistor, the operational amplifier that second switch transistor is connected collectively forms LED constant-current control circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621180867.0U CN206118127U (en) | 2016-11-03 | 2016-11-03 | A linear LED drive circuit for silicon controlled rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621180867.0U CN206118127U (en) | 2016-11-03 | 2016-11-03 | A linear LED drive circuit for silicon controlled rectifier |
Publications (1)
| Publication Number | Publication Date |
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| CN206118127U true CN206118127U (en) | 2017-04-19 |
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ID=58525723
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621180867.0U Withdrawn - After Issue CN206118127U (en) | 2016-11-03 | 2016-11-03 | A linear LED drive circuit for silicon controlled rectifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106304512A (en) * | 2016-11-03 | 2017-01-04 | 成都锦瑞芯科技有限公司 | A kind of linear LED drive circuit for controllable silicon light modulation |
-
2016
- 2016-11-03 CN CN201621180867.0U patent/CN206118127U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106304512A (en) * | 2016-11-03 | 2017-01-04 | 成都锦瑞芯科技有限公司 | A kind of linear LED drive circuit for controllable silicon light modulation |
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