CN206060701U - III group-III nitride FBAR and wave filter - Google Patents
III group-III nitride FBAR and wave filter Download PDFInfo
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- CN206060701U CN206060701U CN201620809923.6U CN201620809923U CN206060701U CN 206060701 U CN206060701 U CN 206060701U CN 201620809923 U CN201620809923 U CN 201620809923U CN 206060701 U CN206060701 U CN 206060701U
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Abstract
The utility model discloses III group-III nitride FBAR and wave filter, it is related to resonator and wave filter technology field, this utility model includes substrate, Bragg reflecting layer on substrate, the conductive layer on Bragg reflecting layer, piezoelectric layer, upper metal electrode, the conductive layer is III group-III nitride conductive layer, the piezoelectric layer is III group-III nitride piezoelectric layer, produces high mobility two-dimensional electron gas as the passive electrode and transport passage of piezoelectric charge between III group-III nitride conductive layer and III group-III nitride piezoelectric layer.Avoid, prepare the process of piezoelectric layer again on metal electrode, realize the continuous preparation between lower conductive material layer and piezoelectric material layer, technological process is simple, convenient, and it is more preferable to be all the piezoelectric crystal mass prepare on the conductive layer of III group-III nitride, piezoelectric moduluses are higher, and the filtering performance of the wave filter constituted using the resonator of this structure is more preferable.
Description
Technical field
This utility model is related to FBAR and wave filter technology field, more particularly to III group-III nitride thin film
Bulk acoustic wave resonator and wave filter technology field.
Background technology
Miniaturization, integrated, high-performance are requirement of the wireless terminal to frequency device.Conventional radio frequency/microwave frequency band frequency
The solution of device is dielectric ceramic filter, surface acoustic wave（SAW）Wave filter and bulk acoustic wave（BAW）Wave filter.The former has
There is preferable performance, but volume is too big；Although the latter's small volume, have that operating frequency is low, insertion loss is big, power capacity is low
Shortcoming.Bulk acoustic wave BAW filtering devices combine the advantage of dielectric ceramic filter and SAW filter, while and can overcome two
The shortcoming of person, it is considered to be optimal GHZ component solutions.
Traditional BAW resonators are the sandwich-like structures being made up of metal electrode-piezoelectric membrane-metal electrode.BAW is humorous
The electromechanical coupling factor of device of shaking depends primarily on the quality of piezoelectric membrane, and piezoelectric membrane generally selects semi-conducting material, and piezoelectricity is thin
The c-axis preferred orientation of film is better, and the electromechanical coupling factor of BAW resonators is also higher, and the oriented growth of piezoelectric membrane, receive
The impact of primer Lattice Matching and growth conditionss is very big.But as lower metal electrode and piezoelectric membrane have very high crystalline substance
Lattice mismatch, so big lattice mismatch cause very high dislocation density, in the non-radiative recombination that will be made in BAW filtering devices
The heart increases, and limits the further lifting of its internal quantum efficiency, is unfavorable for the transmission of sound wave.Therefore, how meeting BAW device
The high-quality piezoelectric membrane of requirement is incorporated on lower metal electrode the key issue for becoming urgent need to resolve.
Utility model content
The technical problems to be solved in the utility model is for above-mentioned the deficiencies in the prior art, there is provided a kind of III group-III nitride
FBAR, can both meet the collection of piezoelectric charge and transport demand, can ensure that piezoelectric layer and conductive layer again
Between interface it is good, realize the continuous preparation between lower conductiving layer and piezoelectric layer, technological process is simple, convenient.
To solve above-mentioned technical problem, technical solution adopted in the utility model is：III group-III nitride film bulk acoustic
Resonator, comprising substrate, the Bragg reflecting layer on substrate, the conductive layer on Bragg reflecting layer, piezoelectric layer, on
Metal electrode, the conductive layer be III group-III nitride conductive layer, the piezoelectric layer be III group-III nitride piezoelectric layer, III group-III nitride
High mobility two-dimensional electron gas are produced between conductive layer and III group-III nitride piezoelectric layer as the passive electrode of piezoelectric charge and is dredged
Wan access.
The technical scheme for further optimizing is that described substrate is in SiC, Si, sapphire, AlN, GaN or diamond
Kind.
The technical scheme for further optimizing is that described Bragg reflecting layer is made up of the high and low resistance film alternating of multilamellar.
The technical scheme for further optimizing is that described high impedance thin film uses W or Mo, Low ESR thin film to use metal Al.
The technical scheme for further optimizing be III described group-III nitride conductive layer be GaN, AlGaN, InN, InAlN or
InGaN nitride layers.
It is III race's nitrogen with high tension performance that the technical scheme for further optimizing is III described group-III nitride piezoelectric layer
Compound material, its polarization intensity are higher than III group-III nitride conductive layer, including AlN, AlGaN, InAlN, GaN, InGaN or InN
Nitride.
It is Mo, Au, Pt, Al, W, Ti or therein group that the technical scheme for further optimizing is described upper metal electrode
Close.
The technical scheme for further optimizing be III described group-III nitride piezoelectric layer thickness be work sound wave half-wavelength.
It is four points that the technical scheme for further optimizing is the thickness of III described group-III nitride conductive layer and upper metal electrode
One of work sound wave wavelength.
This utility model also provides a kind of III group-III nitride thin-film bulk acoustic wave filter, includes III race's nitrogen described above
Compound FBAR.
Using the beneficial effect produced by above-mentioned technical proposal it is：Resonator of the present utility model utilizes III group-III nitride
The high mobility two-dimensional electron gas produced between conductive layer and III group-III nitride piezoelectric layer as piezoelectric charge passive electrode and
Transport passage, it is to avoid first deposit the process that lower metal electrode prepares deposition tube layer again on metal electrode, realize down
Continuous preparation between conductive material layer and piezoelectric material layer, technological process are simple, convenient；And it is being all leading for III group-III nitride
More preferably, piezoelectric moduluses are higher, using the filtering performance of the wave filter of this structure for the piezoelectric crystal mass prepared in electric layer
More preferably.
Description of the drawings
Fig. 1 is the structural representation of III group-III nitride FBAR.
In figure：1st, substrate；2nd, Bragg reflecting layer；21st, high impedance thin film；22nd, Low ESR thin film；3rd, III group-III nitride is led
Electric layer；4th, III group-III nitride piezoelectric layer；5th, upper metal electrode.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only this utility model a part of embodiment, rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under the premise of creative work is made
Any modification, equivalent and improvement made within spirit of the present utility model and principle etc., belongs to this utility model
The scope of protection.
As shown in figure 1, III group-III nitride FBAR, comprising substrate 1, the Prague on substrate 1 is anti-
Penetrate layer 2, the conductive layer on Bragg reflecting layer 2, piezoelectric layer, upper metal electrode 5, conductive layer, piezoelectric layer, upper metal electrode
5 sandwich structure consistings, conductive layer are III group-III nitride conductive layer 3, replace lower metal electricity using III group-III nitride conductive layer 3
Pole, piezoelectric layer are III group-III nitride piezoelectric layer 4, due to the polarization reaction of III group-III nitride, using III group-III nitride conductive layer 3 with
High mobility two-dimensional electron gas are produced between III group-III nitride piezoelectric layer 4 as the passive electrode and transport passage of piezoelectric charge,
The collection of piezoelectric charge can both be met and demand had been transported, can ensure that III group-III nitride piezoelectric layer 4 and III group-III nitride were led again
Between electric layer 3, interface is good, and the continuous preparation between conductive layer and piezoelectric layer, and technological process is simple, convenient, and is being all
More preferably, piezoelectric moduluses are higher for III group-III nitride piezoelectric layer, 4 crystal mass prepared on the conductive layer 3 of III group-III nitride.
Substrate 1 can select SiC, Si, sapphire, AlN, GaN or diamond.
Bragg reflecting layer 2 is alternatively formed by the high and low resistance film of multilamellar.
Low ESR thin film 22 can use metal Al, high impedance thin film 21 use W or Mo.
III group-III nitride conductive layer 3 is III group-III nitride that two-dimensional electron gas can be produced between III group-III nitride piezoelectric layer
Material, can select the nitride such as GaN, AlGaN, InN, InAlN, InGaN.
III group-III nitride piezoelectric layer 4 is III group nitride material with high tension performance, and its polarization intensity is higher than to be led
Electric layer, including the nitride such as AlGaN, InAlN, GaN, InGaN, InN of AlN, high Al contents, prepare conductive in III group-III nitride
AlN piezoelectric c-axis preferred orientations on layer are good.
Upper metal electrode 5 is Mo, Au, Pt, Al, W, Ti or combination therein.
Piezoelectric layer thickness is the half-wavelength of work sound wave.
The thickness of conductive layer and upper metal electrode 5 is the wavelength of a quarter work sound wave.
Optimum embodiment is：Using Sapphire Substrate, Bragg reflecting layer is the metal Mo thin film and metal being superimposed
Al thin film：Mo-Al-Mo-Al-Mo-Al, III group-III nitride conductive layer are the GaN of c-axis orientation, and III group-III nitride piezoelectric layer is c-axis
The AlN of preferred orientation, upper metal electrode are Ti/Au.
Optimum embodiment technological process：
Using d.c. sputtering depositing operation in the Sapphire Substrate 1 shown in accompanying drawing 1 according to Mo-Al-Mo-Al-Mo-Al's
Sequentially, the Bragg reflecting layer 2 of the metal Mo thin layers and metal Al thin layers composition being superimposed is made successively.Then sink again
The GaN conductive layers 3 of product c-axis orientation, peel off to form figure with negative glue.AlN piezoelectric layers 4 are prepared under Optimizing Technical, with just
Glue makees mask resist layer, Tetramethylammonium hydroxide（TMAH）Aqueous solution be etching agent wet etching AlN thin film, formed piezoelectric layer
Figure.Splash-proofing sputtering metal Ti/Au peels off to form figure with negative glue as upper metal electrode 5.Wherein, 4 thickness of AlN piezoelectric layers
Be the half-wavelength of work sound wave, GaN conductive layers 3 and upper metal electrode 5 thickness be all a quarter work sound wave wavelength, cloth
The area of 3 each layer of glug reflecting layer 2 and GaN conductive layers is 1 × 1 square millimeter, and 4 area of AlN piezoelectric layers is 500 × 500 squares
Micron, 5 area of Top electrode is 500 × 500 square microns.
This utility model also proposes III group-III nitride thin-film bulk acoustic wave filter, and the wave filter contains III race of said structure
Nitride film bulk acoustic wave resonator, the AlN piezoelectric c-axis preferred orientations prepared on III group-III nitride conductive layer are good, BAW
The electromechanical coupling factor of resonator is better, and the performance of the BAW wave filter of composition is more preferable.Concrete structure reference above-described embodiment, by
Contain whole technical schemes of above-mentioned all embodiments, therefore the same technology with above-described embodiment in this bulk accoustic wave filter
All beneficial effects that scheme is brought, this is no longer going to repeat them.
Using above-mentioned technical proposal, in solving prior art, lower metal electrode has very high with deposition tube material
Lattice mismatch, is unfavorable for the shortcoming of the transmission of sound wave, and resonator of the present utility model utilizes III group-III nitride conductive layer and III
The high mobility two-dimensional electron gas produced between group-III nitride piezoelectric layer are kept away as the passive electrode and transport passage of piezoelectric charge
Exempt from first to deposit the process that lower metal electrode prepares piezoelectric layer again on metal electrode, realized lower conductive material layer and piezoresistive material
Continuous preparation between the bed of material, technological process are simple, convenient；And it is being all the piezoresistive material prepare on the conductive layer of III group-III nitride
More preferably, piezoelectric moduluses are higher, and the filtering performance using the wave filter of this structure is more preferable for material crystal mass.
Claims (10)
1. III group-III nitride FBAR, it is characterised in that：Comprising substrate（1）, located at substrate（1）On Prague
Reflecting layer（2）, located at Bragg reflecting layer（2）On conductive layer, piezoelectric layer, upper metal electrode（5）, the conductive layer is III race
Nitride conductive layer（3）, the piezoelectric layer is III group-III nitride piezoelectric layer（4）, III group-III nitride conductive layer（3）Nitrogenize with III race
Thing piezoelectric layer（4）Between produce high mobility two-dimensional electron gas as piezoelectric charge passive electrode and transport passage.
2. III group-III nitride FBAR according to claim 1, it is characterised in that the substrate（1）For
One kind in SiC, Si, sapphire, AlN, GaN or diamond.
3. III group-III nitride FBAR according to claim 1, it is characterised in that the Bragg reflection
Layer（2）By multilamellar high impedance thin film（21）, Low ESR thin film（22）Alternately constitute.
4. III group-III nitride FBAR according to claim 3, it is characterised in that the high impedance thin film
（21）Using W or Mo, Low ESR thin film（22）Using metal Al.
5. III group-III nitride FBAR according to claim 1, it is characterised in that III group-III nitride
Conductive layer（3）For GaN, AlGaN, InN, InAlN or InGaN nitride layer.
6. III group-III nitride FBAR according to claim 1, it is characterised in that III group-III nitride
Piezoelectric layer（4）For III group nitride material, its polarization intensity is higher than III group-III nitride conductive layer（3）.
7. III group-III nitride FBAR according to claim 1, it is characterised in that the upper metal electrode
（5）For Mo, Au, Pt, Al, W or Ti.
8. III group-III nitride FBAR according to claim 1, it is characterised in that III group-III nitride
Piezoelectric layer（4）Thickness is the half-wavelength of work sound wave.
9. III group-III nitride FBAR according to claim 1, it is characterised in that III group-III nitride
Conductive layer（3）With upper metal electrode（5）Thickness be a quarter work sound wave wavelength.
10. III group-III nitride thin-film bulk acoustic wave filter, it is characterised in that comprising just like any one of claim 1-9
III group-III nitride FBAR.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620809923.6U CN206060701U (en) | 2016-07-29 | 2016-07-29 | III group-III nitride FBAR and wave filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620809923.6U CN206060701U (en) | 2016-07-29 | 2016-07-29 | III group-III nitride FBAR and wave filter |
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| CN206060701U true CN206060701U (en) | 2017-03-29 |
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| CN201620809923.6U Withdrawn - After Issue CN206060701U (en) | 2016-07-29 | 2016-07-29 | III group-III nitride FBAR and wave filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130501A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | III group-III nitride FBAR and wave filter |
| WO2020169304A1 (en) * | 2019-02-21 | 2020-08-27 | RF360 Europe GmbH | Baw resonator with improved crystalline quality, rf filter, multiplexer and method of manufacturing |
-
2016
- 2016-07-29 CN CN201620809923.6U patent/CN206060701U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130501A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | III group-III nitride FBAR and wave filter |
| CN106130501B (en) * | 2016-07-29 | 2018-12-11 | 中国电子科技集团公司第十三研究所 | III group-III nitride thin film bulk acoustic wave resonator and filter |
| WO2020169304A1 (en) * | 2019-02-21 | 2020-08-27 | RF360 Europe GmbH | Baw resonator with improved crystalline quality, rf filter, multiplexer and method of manufacturing |
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| GR01 | Patent grant | ||
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Granted publication date: 20170329 Effective date of abandoning: 20181211 |