CN206041989U - Middling pressure broadband power line carrier communication circuit - Google Patents
Middling pressure broadband power line carrier communication circuit Download PDFInfo
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- CN206041989U CN206041989U CN201621039336.XU CN201621039336U CN206041989U CN 206041989 U CN206041989 U CN 206041989U CN 201621039336 U CN201621039336 U CN 201621039336U CN 206041989 U CN206041989 U CN 206041989U
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Abstract
The utility model discloses a middling pressure broadband power line carrier communication circuit, including the wide band multicarrier chip, the carrier wave amplifying unit, carrier wave receiving element, coupling unit and electrical unit, the wide band multicarrier chip passes through the carrier wave amplifying unit, carrier wave receiving element and coupling unit link to each other, electrical unit and wide band multicarrier chip, the carrier wave amplifying unit, carrier wave receiving element links to each other, the carrier wave amplifying unit enlargies module and carrier wave current amplification module including the carrier voltage of establishing ties, carrier wave current amplification module is including parallelly connected a current amplification submodule piece and the 2nd current amplification submodule piece, the output of a current amplification submodule piece and the 2nd current amplification submodule piece links to each other with the coupling unit respectively. The utility model discloses can regard as the high speed data transmission medium to communicate, can carry out power amplification to the high frequency wide band multicarrier signal of 0~20MHz within range with the 10kV medium voltage electric distribution net, have the advantage that communication speed is high, the communication performance is good, circuit structure is simple, implementation cost is low.
Description
Technical field
This utility model is related to power-line carrier communication, and in particular to press broadband power line carrier communication electricity in one kind
Road, enters row data communication for facilities such as intelligent electric meters by medium voltage power line.
Background technology
Power line carrier communication circuit enters row data communication using electric lines of force, in order to realize the carrying of carrier signal, needs
Carrier signal is amplified, but convention carrier power amplification circuit, due to the restriction of circuit structure and device property, only
Power amplification can be carried out to the low frequency and narrow bandwidth signal in the range of 0 ~ 1MHz, it is impossible in enough satisfactions, press the transfer rate of broadband power line
With the requirement of distance, and there are problems that mostly that traffic rate is low, communication performance is poor, circuit structure is complicated,.
Utility model content
The technical problems to be solved in the utility model：For the problems referred to above of prior art, there is provided one kind can be with 10kV
Medium voltage distribution network carries out communicating as high speed data transfer medium, can be to the high-frequency wideband carrier signal in the range of 0 ~ 20MHz
Carry out power amplification, the middle pressure broadband power line that traffic rate is high, communication performance is good, circuit structure is simple, implementation cost is low is carried
Wave communication circuit.
In order to solve above-mentioned technical problem, the technical solution adopted in the utility model is：
Broadband power line carrier communication circuit is pressed in one kind, is received including bandwidth carrier chip, carrier wave amplifying unit, carrier wave
Unit, coupling unit and power subsystem, the bandwidth carrier chip pass through carrier wave amplifying unit, carrier wave receiving unit and coupling respectively
Close unit to be connected, the power subsystem is connected with bandwidth carrier chip, carrier wave amplifying unit, carrier wave receiving unit respectively, described
Carrier wave amplifying unit includes carrier voltage amplification module and the carrier current amplification module connected, the carrier current amplification module
Including the first Current amplifier submodule in parallel and the second Current amplifier submodule, the first Current amplifier submodule and second
The outfan of Current amplifier submodule is connected with coupling unit respectively.
Preferably, the carrier voltage amplification module includes broadband PLC amplification chips, resistance R23, resistance R24, resistance
R25, electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C6 and electric capacity C7, an input D1_IN+ of the broadband PLC amplification chips
It is connected with output terminals A INP of bandwidth carrier chip by electric capacity C1, another input D2_IN+ is carried by electric capacity C2 and broadband
Output terminals A INN of ripple chip is connected, and the broadband PLC amplification chips include two groups of difference output ends D1 and D2, and the difference is defeated
Pass sequentially through as output terminals A IN_P, cathode output end D1_IN- after the cathode output end D1_OUT serial capacitance C6 for going out to hold D1
Resistance R25, electric capacity C3 are connected with the cathode output end D2_IN- of difference output end D2, and the resistance R23 is arranged in parallel in difference
Between the cathode output end D1_OUT of outfan D1, cathode output end D1_IN-, the cathode output end of the difference output end D2
As output terminals A IN_N after D2_OUT serial capacitance C7, output terminals A IN_P of the carrier voltage amplification module, outfan
AIN_N is connected with carrier current amplification module.
Preferably, the first Current amplifier submodule includes broadband PLC amplification chip N1, resistance R27, resistance R28, electricity
Resistance R35, resistance R36, resistance R37, resistance R41, resistance R42, resistance R45, resistance R47, resistance R61, resistance R64, resistance
R278, resistance R396, electric capacity C12 and electric capacity C13, the first difference electrode input end 1N+ point of the broadband PLC amplification chip N1
It is not connected with output terminals A IN_P of carrier voltage amplification module by resistance R36, is grounded by resistance R27, the broadband PLC
The first difference negative input 1N- of amplification chip N1 respectively by resistance R41 ground connection, it is defeated by resistance R35 and the first positive pole
Go out to hold 1OUT to be connected, the second difference electrode input end 2N+ of the broadband PLC amplification chip N1 passes through resistance R45 and load respectively
Output terminals A IN_P of wave voltage amplification module is connected, by the output terminals A IN_N phase of resistance R396 and carrier voltage amplification module
Even, it is grounded by resistance R28, the second difference negative input 2N- of the broadband PLC amplification chip N1 passes through resistance respectively
R42 ground connection, by resistance R278 and the first difference negative input 1N- be connected, by resistance R37 and the second cathode output end
2OUT is connected, and one end of resistance R64 passes through electric capacity C12, resistance R61 respectively and first positive pole of broadband PLC amplification chip N1 is defeated
Go out to hold 1OUT to be connected, and by electric capacity C13, resistance R47 and the second cathode output end 2OUT phases of broadband PLC amplification chip N1
Even, the other end of resistance R64 is connected with reference voltage output terminals A OUT_P as the first Current amplifier submodule；Described
Two Current amplifier submodules include broadband PLC amplification chip N2, resistance R26, resistance R29, resistance R38, resistance R39, resistance
R40, resistance R43, resistance R44, resistance R46, resistance R48, resistance R62, resistance R63, resistance R65, resistance R276 and resistance
The first difference electrode input end 1N+ of R397, the broadband PLC amplification chip N2 is put by resistance R397 and carrier voltage respectively
Output terminals A IN_P of big module is connected, is connected with output terminals A IN_N of carrier voltage amplification module by resistance R39, by electricity
Resistance R26 ground connection, the first difference negative input 1N- of the broadband PLC amplification chip N2 are grounded by resistance R43 respectively, are led to
Cross resistance R38 and the first cathode output end 1OUT to be connected, the second difference electrode input end 2N of the broadband PLC amplification chip N2
+ be connected with output terminals A IN_N of carrier voltage amplification module by resistance R46 respectively, be grounded by resistance R29, the broadband
The second difference negative input 2N- of PLC amplification chip N2 respectively by resistance R44 ground connection, it is poor by resistance R276 and first
Divide negative input 1N- to be connected, be connected by resistance R40 and the second cathode output end 2OUT, one end of resistance R65 passes through respectively
Electric capacity C14, resistance R63 are connected with the first cathode output end 1OUT of broadband PLC amplification chip N2, and pass through electric capacity C15, resistance
R48 is connected with the second cathode output end 2OUT of broadband PLC amplification chip N2, and the other end of resistance R65 is connected with reference voltage
And as output terminals A OUT_N of the second Current amplifier submodule；The coupling unit respectively with the first Current amplifier submodule
Output terminals A OUT_P, output terminals A OUT_N of the second Current amplifier submodule are connected.
Preferably, the other end of the resistance R64 is provided with afterflow protection diode VD3 and afterflow protection diode VD4, institute
Afterflow protection diode VD3 and afterflow protection diode VD4 arranged in series are stated between+15V and -15V power supplys, the resistance
The other end of R64 is connected between afterflow protection diode VD3 and afterflow protection diode VD4, the other end of the resistance R65
Afterflow protection diode VD5 and afterflow protection diode VD6 is provided with, two poles are protected in afterflow protection diode VD5 and afterflow
Between+15V and -15V power supplys, the other end of the resistance R65 is connected to afterflow protection diode VD5 to pipe VD6 arranged in series
And afterflow protection diode VD6 between.
Preferably, current-limiting protection unit is provided between the outfan of the power subsystem and carrier wave receiving unit.
Preferably, the current-limiting protection unit include audion V1, resistance R16, resistance R18, resistance R20, electric capacity C60,
Resistance R6, resistance R7, electric capacity C59, resistance R12, audion V3, resistance R13, metal-oxide-semiconductor M1 SM4600CSK, resistance R19, resistance
R13, resistance R10, diode VD2, resistance R9, audion V4, resistance R17, resistance R8, resistance R11 and diode VD1, institute
Stating metal-oxide-semiconductor M1 SM4600CSK includes N-MOS pipe M1-1 and P-MOS pipe M1-2, and the audion V1 is PNP type triode, three
The colelctor electrode of pole pipe V1 is sequentially connected in series after resistance R16, resistance R18 as over-current signal outfan OVER_I and bandwidth carrier chip
It is connected, the intermediate connection point between the resistance R16, resistance R18 is grounded by resistance R20, and electric capacity C60 and resistance R20 are in parallel
Connection, resistance R6, resistance R7, one end is connected with the emitter stage of audion V1 after electric capacity C59 three parallel connection, and the other end is by electric
Resistance R12 is connected with the base stage of audion V1, the emitter stage of audion V1 as current-limiting protection unit+12V voltage input ends+
12V_IN is connected with+12V the outfans of power subsystem, audion V3 be NPN type triode, the base stage series resistor of audion V3
It is connected with bandwidth carrier chip as control end TXA_EN after R19, the grounded emitter of audion V3, the colelctor electrode of audion V3
Extremely it is connected with the G of P-MOS pipe M1-2 by resistance R13, the S poles of P-MOS pipe M1-2 are respectively by resistance R12's and audion V1
Base stage is connected, is extremely connected with the G of P-MOS pipe M1-2 by resistance R10, and diode VD2 and resistance R10 are in parallel, P-MOS pipe M1-2
D poles D2 as current-limiting protection unit+12V voltage output end+12V_OUT, and+12V voltage output end+12V_OUT pass through
Resistance R9 is extremely connected with the S of P-MOS pipe M1-2；The audion V4 be PNP type triode, audion V4 emitter stage concatenation electricity
Be connected with bandwidth carrier chip as control end TXA_EN after resistance R17, the G poles phase of base earth, colelctor electrode and N-MOS pipe M1-1
Even, the S poles of N-MOS pipe M1-1 are defeated as the -12V of -12V voltage input end -12V_IN and power subsystem of power switching module
Go out end to be connected, the S poles of N-MOS pipe M1-1 are extremely connected with the G of N-MOS pipe M1-1 by resistance R11, diode VD1 and resistance R11
Parallel connection, the electricity of the D poles D1 of N-MOS pipe M1-1 as the voltage output end -12V_OUT and carrier wave amplifying unit of power switching module
Source input is connected, and the voltage output end -12V_OUT of power switching module is electric by the -12V of resistance R8 and power switching module
Pressure input -12V_IN is connected.
Preferably, the power subsystem includes zero cross detection circuit, AC-DC change-over circuits and DC-DC change-over circuits, described
Bandwidth carrier chip is connected with external power source by zero cross detection circuit, the input and external electrical of the AC-DC change-over circuits
Source is connected, and the outfan of the AC-DC change-over circuits passes through the power input phase of DC-DC change-over circuits and bandwidth carrier chip
Connect, and the outfan of the AC-DC change-over circuits is connected with carrier wave receiving unit.
Preferably, the bandwidth carrier chip is also associated with memory module, indicating lamp module and data transmission interface module,
The data transmission interface module includes serial interface submodule and RJ45 interface sub-modules.
Broadband power line carrier communication circuit tool is pressed to have the advantage that in this utility model：Carrier wave of the present utility model amplifies
Unit includes carrier voltage amplification module and the carrier current amplification module connected, and carrier current amplification module includes the of parallel connection
One Current amplifier submodule and the second Current amplifier submodule, the first Current amplifier submodule and the second Current amplifier submodule
Outfan is connected with coupling unit respectively, according to 10kV medium voltage power lines transmission range farther out with to require message transmission rate higher
The characteristics of, by the first Current amplifier submodule and the second Current amplifier submodule of carrier voltage amplification module and parallel connection to defeated
Entering level first carries out voltage amplification, and output stage carries out Current amplifier using the circuit widened structure of Parallel opertation, to be press-fitted in 10kV
Electrical network is changed into high performance data transmission backbones as high speed data transfer medium medium voltage network, then at a high speed
Data are modulated into the broadband carrier signal of 2 ~ 12MHz frequencies through bandwidth carrier chip, and the carrier wave in this utility model is put
Big circuit carries out power amplification, then the broadband carrier signal of 2 ~ 12MHz is coupled on 10kV electric lines of force by termination power,
High speed meter reading data and control signal transmission is realized, power can be carried out to the high-frequency wideband carrier signal in the range of 0 ~ 20MHz
Amplify, have the advantages that traffic rate is high, communication performance is good, circuit structure is simple, implementation cost is low.
Description of the drawings
Circuit theory schematic diagrams of the Fig. 1 for this utility model embodiment.
Fig. 2 is the circuit theory schematic diagram of this utility model embodiment middle width strip carrier chip and its peripheral circuit.
Fig. 3 is the circuit theory schematic diagram of carrier voltage amplification module in this utility model embodiment.
Fig. 4 is the circuit theory schematic diagram of carrier current amplification module in this utility model embodiment.
Fig. 5 is the circuit theory schematic diagram of carrier wave receiving unit in this utility model embodiment.
Fig. 6 is the circuit theory schematic diagram of current-limiting protection unit in this utility model embodiment.
Fig. 7 is the circuit theory schematic diagram of zero cross detection circuit in this utility model embodiment.
Fig. 8 is the circuit theory schematic diagram of AC-DC change-over circuits in this utility model embodiment.
Fig. 9 is the circuit theory schematic diagram of DC-DC change-over circuit 3.3V parts in this utility model embodiment.
Figure 10 is the circuit theory schematic diagram of DC-DC change-over circuit 1.2V parts in this utility model embodiment.
Figure 11 is the circuit theory schematic diagram of RS232 interface modules in this utility model embodiment.
Figure 12 is the circuit theory schematic diagram of RS485 interface modules in this utility model embodiment.
Figure 13 is the circuit theory schematic diagram of RJ45 interface modules in this utility model embodiment.
Marginal data：1st, bandwidth carrier chip；11st, memory module；12nd, indicating lamp module；13rd, data transmission interface mould
Block；2nd, carrier wave amplifying unit；21st, carrier voltage amplification module；22nd, carrier current amplification module；221st, the first Current amplifier
Module；222nd, the second Current amplifier submodule；3rd, carrier wave receiving unit；4th, coupling unit；5th, power subsystem；51st, zero passage detection
Circuit；52nd, AC-DC change-over circuits；53rd, DC-DC change-over circuits；6th, current-limiting protection unit.
Specific embodiment
As shown in figure 1, the middle pressure broadband power line carrier communication circuit of the present embodiment includes bandwidth carrier chip 1, carrier wave
Amplifying unit 2, carrier wave receiving unit 3, coupling unit 4 and power subsystem 5, bandwidth carrier chip 1 amplify single by carrier wave respectively
Unit 2, carrier wave receiving unit 3 be connected with coupling unit 4, power subsystem 5 respectively with bandwidth carrier chip 1, carrier wave amplifying unit 2,
Carrier wave receiving unit 3 is connected, and carrier wave amplifying unit 2 includes carrier voltage amplification module 21 and the carrier current amplification module connected
22, carrier current amplification module 22 includes the first Current amplifier submodule 221 and the second Current amplifier submodule 222 of parallel connection,
First Current amplifier submodule 221 is connected with coupling unit 4 respectively with the outfan of the second Current amplifier submodule 222.
Referring to Fig. 2,6th generation SSC1664 type carrier chip of the present embodiment middle width strip carrier chip 1 using Qingdao Neusoft
（Hereinafter referred to as SSC1664 chips）, bandwidth carrier chip 1 for generating output to the carrier signal on electric lines of force, believe by the carrier wave
Number may be output on the electric lines of force of 10kV medium voltage distribution networks by carrier wave amplifying unit 2, while bandwidth carrier chip 1 can be with
Carrier signal on the electric lines of force of 10kV medium voltage distribution networks is received by carrier wave receiving unit 3.SSC1664 chips will be simulated
Front end, baseband modulation and demodulation, Digital Signal Processing, CPU core and abundant function peripheral hardware are integrated in one, there is provided physical layer
（PHY）, media access control layer（MAC）, adaptation layer（ADP）, Internet（NET）, application layer（APP）It is logical etc. complete electric lines of force
Letter solution.Compare that traditional arrowband chip signal bandwidth is wider, transfer rate is higher.SSC1664 integrated chips are processed
The interface such as device, local RAM, 2MB SDRAM and UART, I2C, SPI, GPIO, also add the ether of 8MB SDRAM and standard
Net RMII interfaces.
Referring to Fig. 1, bandwidth carrier chip 1 is also associated with memory module 11, indicating lamp module 12（Indicate the system work shape
State）With data transmission interface module 13, data transmission interface module 13 includes serial interface submodule and RJ45 interface sub-modules.
In the present embodiment, memory module 11 adopts 16Mbit flash storage chips, for the storage of medium-voltage carrier program.
The function of carrier voltage amplification module 21 is that the analogue signal exported from carrier chip is amplified, and through letter
After single filtering, it is coupled on electric lines of force by signal coupling circuit, meets the requirement of power line transmission, improves carrier communication
Distance.As shown in figure 3, carrier voltage amplification module 21 include broadband PLC amplification chips, resistance R23, resistance R24, resistance R25,
Electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C6 and electric capacity C7, an input D1_IN+ of broadband PLC amplification chips pass through electric capacity
C1 is connected with output terminals A INP of bandwidth carrier chip 1, another input D2_IN+ passes through electric capacity C2 and bandwidth carrier chip 1
Output terminals A INN be connected, broadband PLC amplification chips include two groups of difference output ends D1 and D2, and the positive pole of difference output end D1 is defeated
Resistance R25, electric capacity C3 are passed sequentially through as output terminals A IN_P, cathode output end D1_IN- after going out to hold D1_OUT serial capacitance C6
It is connected with the cathode output end D2_IN- of difference output end D2, resistance R23 is arranged in parallel the positive pole output in difference output end D1
Between end D1_OUT, cathode output end D1_IN-, conduct after the cathode output end D2_OUT serial capacitance C7 of difference output end D2
Output terminals A IN_N, output terminals A IN_P of carrier voltage amplification module 21,22 phase of output terminals A IN_N and carrier current amplification module
Even.In the present embodiment, the broadband PLC amplification chips of carrier voltage amplification module 21 specifically adopt the special amplification chips of broadband PLC
THS6214（Abbreviation THS6214 chips）.THS6214 chips are for carrying out voltage amplification to carrier signal, electric using differential amplification
Line structure, the difference carrier signal of carrier chip output are coupled to the first Current amplifier submodule through electric capacity C1 and electric capacity C2
221 and the second Current amplifier submodule 222.R23 and R24 is resistance, and R25 is resistance, electric capacity C3, electric capacity C6 and electric capacity C7 be every
Straight electric capacity, the resistance of resistance R4, resistance R5 for THS6214 chips, electric current configuration resistance of the resistance R3 for THS6214 chips, this
Embodiment is exaggerated 8.27 times by the carrier signal of electric capacity C6 and electric capacity C7.
As shown in figure 4, the first Current amplifier submodule 221 include broadband PLC amplification chip N1, resistance R27, resistance R28,
Resistance R35, resistance R36, resistance R37, resistance R41, resistance R42, resistance R45, resistance R47, resistance R61, resistance R64, resistance
R278, resistance R396, electric capacity C12 and electric capacity C13, the first difference electrode input end 1N+ of broadband PLC amplification chip N1 lead to respectively
Cross resistance R36 to be connected with output terminals A IN_P of carrier voltage amplification module 21, be grounded by resistance R27, broadband PLC amplifies core
The first difference negative input 1N- of piece N1 respectively by resistance R41 ground connection, by resistance R35 and the first cathode output end
1OUT is connected, and the second difference electrode input end 2N+ of broadband PLC amplification chip N1 is put by resistance R45 and carrier voltage respectively
Output terminals A IN_P of big module 21 is connected, is connected with output terminals A IN_N of carrier voltage amplification module 21 by resistance R396,
Be grounded by resistance R28, the second difference negative input 2N- of broadband PLC amplification chip N1 respectively by resistance R42 ground connection,
It is connected by resistance R278 and the first difference negative input 1N-, is connected by resistance R37 and the second cathode output end 2OUT,
One end of resistance R64 passes through the first cathode output end 1OUT phases of electric capacity C12, resistance R61 and broadband PLC amplification chip N1 respectively
Even, and it is connected with the second cathode output end 2OUT of broadband PLC amplification chip N1 by electric capacity C13, resistance R47, resistance R64's
The other end is connected with reference voltage output terminals A OUT_P as the first Current amplifier submodule 221；Second Current amplifier
Module 222 include broadband PLC amplification chip N2, resistance R26, resistance R29, resistance R38, resistance R39, resistance R40, resistance R43,
Resistance R44, resistance R46, resistance R48, resistance R62, resistance R63, resistance R65, resistance R276 and resistance R397, broadband PLC are put
The first difference electrode input end 1N+ of large chip N2 passes through the outfan of resistance R397 and carrier voltage amplification module 21 respectively
AIN_P is connected, is connected with output terminals A IN_N of carrier voltage amplification module 21 by resistance R39, is grounded by resistance R26, wide
The first difference negative input 1N- with PLC amplification chip N2 respectively by resistance R43 ground connection, by resistance R38 and first just
Pole outfan 1OUT is connected, and the second difference electrode input end 2N+ of broadband PLC amplification chip N2 passes through resistance R46 and load respectively
Output terminals A IN_N of wave voltage amplification module 21 is connected, is grounded by resistance R29, second difference of broadband PLC amplification chip N2
Negative input 2N- is grounded by resistance R44 respectively, is connected, is passed through by resistance R276 and the first difference negative input 1N-
Resistance R40 and the second cathode output end 2OUT is connected, and one end of resistance R65 passes through electric capacity C14, resistance R63 and broadband PLC respectively
The first cathode output end 1OUT of amplification chip N2 is connected, and by electric capacity C15, resistance R48 and broadband PLC amplification chip N2
Second cathode output end 2OUT is connected, and the other end of resistance R65 is connected with reference voltage and as the second Current amplifier submodule
222 output terminals A OUT_N；Output terminals A OUT_P respectively with the first Current amplifier submodule 221 of coupling unit 4, the second electric current
Output terminals A OUT_N for amplifying submodule 222 is connected.In the present embodiment, broadband PLC amplification chips N1 and broadband PLC amplification chips
N2 specifically adopts the special amplification chip THS6012 of broadband PLC（Abbreviation THS6012 chips）.Signal input after voltage amplification is arrived
THS6012 chips carry out the Current amplifier of carrier signal, and using two THS6012 chips, and adoption rate amplifies and difference is put
Big compatible design, single THS6012 chips acquiescence are first entered to single-ended signal respectively using two-way scaling circuit Parallel opertation
Row Current amplifier, then two THS6012 chips are with the output of difference channel topological structure, wherein resistance R26, resistance R27, resistance
R28, resistance R29 be build-out resistor, resistance R36, resistance R396, resistance R45, resistance R397, resistance R397, resistance R39, resistance
R46 selects resistance for scaling and difference channel, and resistance R35, resistance R37, resistance R38, resistance R40 are feedback resistance, electric
R41, resistance R42, resistance R43, resistance R44 is hindered for gain resistor, resistance R61, resistance R47, resistance R62, resistance R48, resistance
R64, resistance R65 be current-limiting resistance, electric capacity C12, electric capacity C13, electric capacity C14, electric capacity C15, electric capacity C120, electric capacity C122, electric capacity
C123 is coupled capacitor.
As shown in figure 4, the other end of resistance R64 is provided with afterflow protection diode VD3 and afterflow protection diode VD4, continue
, between+15V and -15V power supplys, resistance R64's is another for stream protection diode VD3 and afterflow protection diode VD4 arranged in series
End is connected between afterflow protection diode VD3 and afterflow protection diode VD4, and the other end of resistance R65 is provided with afterflow protection
Diode VD5 and afterflow protection diode VD6, afterflow protection diode VD5 and afterflow protection diode VD6 arranged in series in+
Between 15V and -15V power supplys, the other end of resistance R65 be connected to afterflow protection diode VD5 and afterflow protection diode VD6 it
Between, diode VD3, diode VD4, diode VD5, diode VD6 are afterflow protection diode.
Carrier wave receiving unit 3 is used for filtering the noise jamming on electric lines of force, improves carrier signal receptivity.As schemed
Shown in 5, carrier wave receiving unit 3 be by 3 rank low pass Chebyshev filters and 5 rank high pass Chebyshev filters constitute it is existing
Carrier wave receiving circuit, carrier wave receiving unit 3 for filtering carrier signal out of band signal, improve the signal to noise ratio for receiving signal.Fig. 5
In, on the one hand resistance R49, resistance R52 are current-limiting resistance, on the other hand make impedance matching；Resistance R50, resistance R51 are used for limiting
The overall DC level of receiving circuit；Electric capacity TS6, TS7 electric capacity is used for receiving signal amplitude restriction, when preventing from existing interference, core
Piece receives pin and there is voltge surge, damages chip and receives pin；Inductance L17, inductance L19, electric capacity C83, electric capacity C4 constitute low
Circuit passband, for filtering more than 12MHz High-frequency Interference；Electric capacity C79, electric capacity C80, inductance L18, electric capacity C81, electric capacity C82, inductance
L21, electric capacity C95, electric capacity C96 constitute high pass circuit because the common high-power interference of electric lines of force appear at substantially 1MHz with
Under low-frequency range, therefore need multistage high-pass filtering, filter low-frequency noise.
As shown in figure 1, being provided with current-limiting protection unit 6 between the outfan of power subsystem 5 and carrier wave receiving unit 3.Current limliting
The effect of protection location 6 is the current drain of ± 12V power supplys for limiting carrier wave receiving unit 3, and meeting the accurate power consumption of state's network mark will
Ask, in the present embodiment maximum current consumption not over 260mA, current-limiting protection unit 6 specifically for detecting to electric current, such as
Fruit then turns off the power supply of carrier wave receiving unit 3 more than 260mA, to reach the purpose of current-limiting protection.
As shown in fig. 6, current-limiting protection unit 6 include audion V1, resistance R16, resistance R18, resistance R20, electric capacity C60,
Resistance R6, resistance R7, electric capacity C59, resistance R12, audion V3, resistance R13, metal-oxide-semiconductor M1 SM4600CSK, resistance R19, resistance
R13, resistance R10, diode VD2, resistance R9, audion V4, resistance R17, resistance R8, resistance R11 and diode VD1, MOS
Pipe M1 SM4600CSK include N-MOS pipe M1-1 and P-MOS pipe M1-2, and audion V1 is PNP type triode, the collection of audion V1
Electrode is connected with bandwidth carrier chip 1 as over-current signal outfan OVER_I after being sequentially connected in series resistance R16, resistance R18, resistance
Intermediate connection point between R16, resistance R18 is grounded by resistance R20, and electric capacity C60 and resistance R20 are connected in parallel, resistance R6, electricity
After resistance R7, electric capacity C59 three parallel connection, one end is connected with the emitter stage of audion V1, and the other end passes through resistance R12 and audion
The base stage of V1 is connected, the emitter stage of audion V1+12V voltage input end+12V_IN and power supply list as current-limiting protection unit 6
+ 12V the outfans of unit 5 are connected, and audion V3 is NPN type triode, as control after the base stage series resistor R19 of audion V3
End TXA_EN is connected with bandwidth carrier chip 1, the grounded emitter of audion V3, and the colelctor electrode of audion V3 passes through resistance R13
Extremely it is connected with the G of P-MOS pipe M1-2, the S poles of P-MOS pipe M1-2 are connected with the base stage of audion V1 by resistance R12 respectively, logical
The G that resistance R10 is crossed with P-MOS pipe M1-2 is extremely connected, and diode VD2 and resistance R10 are in parallel, the D poles D2 of P-MOS pipe M1-2（MOS
No. 5 terminals of pipe M1 SM4600CSK）As+12V voltage output end+the 12V_OUT of current-limiting protection unit 6, and+12V voltages
Outfan+12V_OUT is extremely connected with the S of P-MOS pipe M1-2 by resistance R9；Audion V4 be PNP type triode, audion V4
Emitter stage series resistor R17 after be connected with bandwidth carrier chip 1 as control end TXA_EN, base earth, colelctor electrode and N-
The G of metal-oxide-semiconductor M1-1 is extremely connected, the S poles of N-MOS pipe M1-1 as power switching module -12V voltage input end -12V_IN and
- 12V the outfans of power subsystem 5 are connected, and the S poles of N-MOS pipe M1-1 are extremely connected with the G of N-MOS pipe M1-1 by resistance R11,
Diode VD1 and resistance R11 are in parallel, the D poles D1 of N-MOS pipe M1-1（No. 7 terminals of metal-oxide-semiconductor M1 SM4600CSK）As power supply
Voltage output end-the 12V_OUT of switch module is connected with the power input of carrier wave amplifying unit 2, the electricity of power switching module
Pressure outfan -12V_OUT is connected with -12V voltage input end-the 12V_IN of power switching module by resistance R8.When exceeding
During 260mA, when resistance R6//resistance R7//inductance C59 three both end voltage is more than 0.7V, audion V1 conductings, over-current signal are defeated
Go out to hold OVER_I to export high level and give SSC1664 chips, now the control signal output TXA_EN output of SSC1664 chips is high
Level, turns off+12V/-12V the power supplies of carrier wave receiving unit 3, to reach the purpose of current-limiting protection.
As shown in figure 1, power subsystem 5 includes zero cross detection circuit 51, AC-DC change-over circuits 52 and DC-DC change-over circuits
53, bandwidth carrier chip 1 is connected with external power source by zero cross detection circuit 51, the input of AC-DC change-over circuits 52 and outer
Portion's power supply is connected, and the outfan of AC-DC change-over circuits 52 is defeated by the power supply of DC-DC change-over circuits 53 and bandwidth carrier chip 1
Enter end to be connected, and the outfan of AC-DC change-over circuits 52 is connected with carrier wave receiving unit 3.
In the present embodiment, the function of zero cross detection circuit 51 be at zero crossing moment of industrial-frequency alternating current in a pulsed fashion
SSC1664 chips are informed, so that zero passage communication is carried out for SSC1664 chips and phase judgment provides foundation.
As shown in fig. 7, zero cross detection circuit 51 is based primarily upon K1010DS chips realize, stabilivolt VD61 and resistance R251,
The effect of resistance R252 is charged for electric capacity C252 in the positive half cycle of power frequency, gathers the electric flux for optocoupler E61 conductings；Resistance
R251, resistance R252 and electric capacity C251 also constitute RC filter circuits, can effectively eliminate the interference on electric lines of force；Resistance R251, electricity
Resistance R252 and resistance R254 composition bleeder circuits, provide the suitable cut-in voltage moment for audion V61.Resistance R255 and electric capacity
C253 constitutes RC filter circuits, prevents audion V61 from opening by mistake because of interference and opens.Stabilivolt VD63 is the stabilivolt of a 5.1V,
Voltage for clamp capacitor C252 two ends is 5.1V.Audion V61 is used for amplifying the signal of zero crossing generation, drives optocoupler to lead
It is logical.Optocoupler E61 plays Phototube Coupling effect, for isolating forceful electric power and light current.
In the present embodiment, AC-DC change-over circuits 52 are used for providing ± 12 and+5V power supplys for system.
As shown in figure 8, AC-DC change-over circuits 52 are based primarily upon chip VC1 realizations, chip VC1 adopts ESSPS-
A15S051612AC-DC conversion chips and its peripheral circuit realize that chip VC1 output ± 12V ,+5V provide electricity for whole system
Source, wherein ± 12V parts are supplied to carrier wave receiving unit 3, a part of 12V to be exported by DC-DC change-over circuits 53 respectively
3.3V and 1.2V is SSC1664 chip power supplies；+ 5V power supplys are exported is isolated with other power supply outputs, to the periphery of SSC1664 chips
Interface circuit（RS485 serial ports）Power supply.
In the present embodiment, DC-DC change-over circuits 53 are used for providing 3.3V and 1.2V power supplys for system；DC-DC change-over circuits
53 include 3.3V conversion circuit parts and 1.2V conversion circuit parts.As shown in figure 9,3.3V conversion circuit parts are based primarily upon
DC-DC conversion chip TS4（MP2314 chips）Realize, DC-DC conversion chips TS4 is for defeated for 3.3V by 12V Power converts
Go out.As shown in Figure 10,1.2V conversion circuit parts are based primarily upon DC-DC conversion chip TS5（MP2015DJ chips）Realize, DC-
DC conversion chips TS4 for by 12V Power converts be 1.2V output.
In the present embodiment, data transmission interface module 13 includes RS232 interface modules, RS485 interface modules, RJ45 interfaces
As shown in figure 11, the RS232 interface module discrete components of the present embodiment realize serial communication RS232 level conversion to module；It is real
High level ＞ 2.4V are now exported, low level ＜ 0.4V is exported.At room temperature, it is 3.3V to export high level, during output low level
0.2V；Minimum input high level >=2.0V, input low level≤0.8V, noise margin are 0.4V.As shown in figure 12, the present embodiment
RS485 interface modules use special RS485 chips BL3085A, using electrical isolation design, on the one hand under environment under high pressure,
Ensure personal safety the protection with equipment；On the other hand, communication can be made to exist in seriously disturbance and other system-level noises
In the case of uninterrupted, zero defect.As shown in figure 13, the RJ45 interface modules of the present embodiment are using RMII's 10/100
LAN8720 network interfaces.
The above is only preferred implementation of the present utility model, and protection domain of the present utility model is not limited merely to
Above-described embodiment, all technical schemes belonged under this utility model thinking belong to protection domain of the present utility model.Should refer to
Go out, for those skilled in the art, some improvement under the premise of without departing from this utility model principle and
Retouching, these improvements and modifications also should be regarded as protection domain of the present utility model.
Claims (8)
1. broadband power line carrier communication circuit is pressed in one kind, it is characterised in that：Including bandwidth carrier chip（1）, carrier wave amplify
Unit（2）, carrier wave receiving unit（3）, coupling unit（4）And power subsystem（5）, the bandwidth carrier chip（1）Pass through respectively
Carrier wave amplifying unit（2）, carrier wave receiving unit（3）And coupling unit（4）It is connected, the power subsystem（5）Carry with broadband respectively
Ripple chip（1）, carrier wave amplifying unit（2）, carrier wave receiving unit（3）It is connected, the carrier wave amplifying unit（2）Including the load of series connection
Wave voltage amplification module（21）With carrier current amplification module（22）, the carrier current amplification module（22）Including in parallel the
One Current amplifier submodule（221）With the second Current amplifier submodule（222）, the first Current amplifier submodule（221）With
Second Current amplifier submodule（222）Outfan respectively and coupling unit（4）It is connected.
2. it is according to claim 1 it is middle pressure broadband power line carrier communication circuit, it is characterised in that：The carrier voltage is put
Big module（21）Including broadband PLC amplification chips, resistance R23, resistance R24, resistance R25, electric capacity C1, electric capacity C2, electric capacity C3, electricity
Hold C6 and electric capacity C7, an input D1_IN+ of the broadband PLC amplification chips passes through electric capacity C1 and bandwidth carrier chip（1）
Output terminals A INP be connected, another input D2_IN+ passes through electric capacity C2 and bandwidth carrier chip（1）Output terminals A INN phase
Even, the broadband PLC amplification chips include two groups of difference output ends D1 and D2, the cathode output end of the difference output end D1
Resistance R25, electric capacity C3 and difference are passed sequentially through as output terminals A IN_P, cathode output end D1_IN- after D1_OUT serial capacitance C6
The cathode output end D2_IN- of outfan D2 is divided to be connected, the resistance R23 is arranged in parallel the positive pole output in difference output end D1
Between end D1_OUT, cathode output end D1_IN-, after the cathode output end D2_OUT serial capacitance C7 of the difference output end D2
As output terminals A IN_N, the carrier voltage amplification module（21）Output terminals A IN_P, output terminals A IN_N and carrier current put
Big module（22）It is connected.
3. it is according to claim 2 it is middle pressure broadband power line carrier communication circuit, it is characterised in that：First electric current is put
Big submodule（221）Including broadband PLC amplification chip N1, resistance R27, resistance R28, resistance R35, resistance R36, resistance R37, electricity
Resistance R41, resistance R42, resistance R45, resistance R47, resistance R61, resistance R64, resistance R278, resistance R396, electric capacity C12 and electric capacity
The first difference electrode input end 1N+ of C13, the broadband PLC amplification chip N1 passes through resistance R36 respectively and carrier voltage amplifies
Module（21）Output terminals A IN_P be connected, be grounded by resistance R27, the first difference negative pole of the broadband PLC amplification chip N1
Input 1N- is grounded by resistance R41 respectively, is connected by resistance R35 and the first cathode output end 1OUT, the broadband PLC
The second difference electrode input end 2N+ of amplification chip N1 passes through resistance R45 and carrier voltage amplification module respectively（21）Output
End AIN_P be connected, by resistance R396 and carrier voltage amplification module（21）Output terminals A IN_N be connected, connect by resistance R28
Ground, the second difference negative input 2N- of the broadband PLC amplification chip N1 respectively by resistance R42 ground connection, by resistance
R278 and the first difference negative input 1N- is connected, is connected by resistance R37 and the second cathode output end 2OUT, resistance R64's
One end is connected with the first cathode output end 1OUT of broadband PLC amplification chip N1 by electric capacity C12, resistance R61 respectively, and is passed through
Electric capacity C13, resistance R47 are connected with the second cathode output end 2OUT of broadband PLC amplification chip N1, and the other end of resistance R64 connects
It is connected to reference voltage and as the first Current amplifier submodule（221）Output terminals A OUT_P；The second Current amplifier submodule
Block（222）Including broadband PLC amplification chip N2, resistance R26, resistance R29, resistance R38, resistance R39, resistance R40, resistance R43,
Resistance R44, resistance R46, resistance R48, resistance R62, resistance R63, resistance R65, resistance R276 and resistance R397, the broadband
The first difference electrode input end 1N+ of PLC amplification chip N2 passes through resistance R397 and carrier voltage amplification module respectively（21）'s
Output terminals A IN_P be connected, by resistance R39 and carrier voltage amplification module（21）Output terminals A IN_N be connected, by resistance
R26 is grounded, and the first difference negative input 1N- of the broadband PLC amplification chip N2 is grounded, is passed through by resistance R43 respectively
Resistance R38 and the first cathode output end 1OUT is connected, the second difference electrode input end 2N+ of the broadband PLC amplification chip N2
Pass through resistance R46 and carrier voltage amplification module respectively（21）Output terminals A IN_N be connected, be grounded by resistance R29, the width
The second difference negative input 2N- with PLC amplification chip N2 respectively by resistance R44 ground connection, by resistance R276 and first
Difference negative input 1N- is connected, is connected by resistance R40 and the second cathode output end 2OUT, and one end of resistance R65 leads to respectively
The first cathode output end 1OUT that electric capacity C14, resistance R63 are crossed with broadband PLC amplification chip N2 is connected, and passes through electric capacity C15, electricity
Resistance R48 is connected with the second cathode output end 2OUT of broadband PLC amplification chip N2, and the other end of resistance R65 is connected with reference to electricity
Press and as the second Current amplifier submodule（222）Output terminals A OUT_N；The coupling unit（4）Put with the first electric current respectively
Big submodule（221）Output terminals A OUT_P, the second Current amplifier submodule（222）Output terminals A OUT_N be connected.
4. it is according to claim 3 it is middle pressure broadband power line carrier communication circuit, it is characterised in that：The resistance R64's
The other end is provided with afterflow protection diode VD3 and afterflow protection diode VD4, and afterflow protection diode VD3 and afterflow are protected
Between+15V and -15V power supplys, the other end of the resistance R64 is connected to afterflow and protects two poles shield diode VD4 arranged in series
Between pipe VD3 and afterflow protection diode VD4, the other end of the resistance R65 is provided with afterflow protection diode VD5 and afterflow guarantor
Shield diode VD6, afterflow protection diode VD5 and afterflow protection diode VD6 arranged in series are in+15V and -15V power supplys
Between, the other end of the resistance R65 is connected between afterflow protection diode VD5 and afterflow protection diode VD6.
5. the middle pressure broadband power line carrier communication circuit according to claim 1 or 2 or 3 or 4, it is characterised in that：It is described
Power subsystem（5）Outfan and carrier wave receiving unit（3）Between be provided with current-limiting protection unit（6）.
6. it is according to claim 5 it is middle pressure broadband power line carrier communication circuit, it is characterised in that：The current-limiting protection list
Unit（6）Including audion V1, resistance R16, resistance R18, resistance R20, electric capacity C60, resistance R6, resistance R7, electric capacity C59, resistance
R12, audion V3, resistance R13, metal-oxide-semiconductor M1 SM4600CSK, resistance R19, resistance R13, resistance R10, diode VD2, resistance
R9, audion V4, resistance R17, resistance R8, resistance R11 and diode VD1, the metal-oxide-semiconductor M1 SM4600CSK include N-
Metal-oxide-semiconductor M1-1 and P-MOS pipe M1-2, the audion V1 are PNP type triode, and the colelctor electrode of audion V1 is sequentially connected in series resistance
As over-current signal outfan OVER_I and bandwidth carrier chip after R16, resistance R18（1）It is connected, the resistance R16, resistance
Intermediate connection point between R18 is grounded by resistance R20, and electric capacity C60 and resistance R20 are connected in parallel, resistance R6, resistance R7, electricity
After holding C59 three's parallel connection, one end is connected with the emitter stage of audion V1, and base stage of the other end by resistance R12 and audion V1
It is connected, the emitter stage of audion V1 is used as current-limiting protection unit（6）+ 12V voltage input end+12V_IN and power subsystem（5）
+ 12V outfans be connected, audion V3 be NPN type triode, as control end after the base stage series resistor R19 of audion V3
TXA_EN and bandwidth carrier chip（1）It is connected, the grounded emitter of audion V3, the colelctor electrode of audion V3 pass through resistance R13
Extremely it is connected with the G of P-MOS pipe M1-2, the S poles of P-MOS pipe M1-2 are connected with the base stage of audion V1 by resistance R12 respectively, logical
The G that resistance R10 is crossed with P-MOS pipe M1-2 is extremely connected, and diode VD2 and resistance R10 are in parallel, the D poles D2 conducts of P-MOS pipe M1-2
Current-limiting protection unit（6）+ 12V voltage output end+12V_OUT, and+12V voltage output ends+12V_OUT by resistance R9 and
The S of P-MOS pipe M1-2 is extremely connected；The audion V4 is PNP type triode, after the emitter stage series resistor R17 of audion V4
As control end TXA_EN and bandwidth carrier chip（1）It is connected, base earth, colelctor electrode are extremely connected with the G of N-MOS pipe M1-1,
- 12V voltage input end -12V_IN and power subsystem of the S poles of N-MOS pipe M1-1 as power switching module（5）- 12V it is defeated
Go out end to be connected, the S poles of N-MOS pipe M1-1 are extremely connected with the G of N-MOS pipe M1-1 by resistance R11, diode VD1 and resistance R11
Parallel connection, the D poles D1 of N-MOS pipe M1-1 voltage output end -12V_OUT and carrier wave amplifying unit as power switching module（2）
Power input be connected, the voltage output end -12V_OUT of power switching module pass through resistance R8 and power switching module -
12V voltage input ends -12V_IN is connected.
7. it is according to claim 1 it is middle pressure broadband power line carrier communication circuit, it is characterised in that：The power subsystem
（5）Including zero cross detection circuit（51）, AC-DC change-over circuits（52）With DC-DC change-over circuits（53）, the bandwidth carrier chip
（1）By zero cross detection circuit（51）It is connected with external power source, the AC-DC change-over circuits（52）Input and external power source
It is connected, the AC-DC change-over circuits（52）Outfan pass through DC-DC change-over circuits（53）With bandwidth carrier chip（1）Electricity
Source input is connected, and the AC-DC change-over circuits（52）Outfan and carrier wave receiving unit（3）It is connected.
8. the middle pressure broadband power line carrier communication circuit according to claim 1 or 2 or 3 or 4, it is characterised in that：It is described
Bandwidth carrier chip（1）It is also associated with memory module（11）, indicating lamp module（12）With data transmission interface module（13）, it is described
Data transmission interface module（13）Including serial interface submodule and RJ45 interface sub-modules.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621039336.XU CN206041989U (en) | 2016-09-06 | 2016-09-06 | Middling pressure broadband power line carrier communication circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621039336.XU CN206041989U (en) | 2016-09-06 | 2016-09-06 | Middling pressure broadband power line carrier communication circuit |
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| CN206041989U true CN206041989U (en) | 2017-03-22 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195173A (en) * | 2017-07-19 | 2017-09-22 | 南京新联电子股份有限公司 | A kind of power information acquisition module based on broadband power line carrier mechanics of communication |
| CN106169939B (en) * | 2016-09-06 | 2019-02-05 | 国家电网公司 | Broadband power line carrier communication circuit is pressed in one kind |
| CN112039503A (en) * | 2020-08-04 | 2020-12-04 | 广州彩熠灯光股份有限公司 | Transmission circuit with differential signal out-of-band instruction, chip and electronic equipment |
| CN114142891A (en) * | 2021-12-06 | 2022-03-04 | 深圳瑞祺科技有限公司 | P + communication device and control method |
-
2016
- 2016-09-06 CN CN201621039336.XU patent/CN206041989U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106169939B (en) * | 2016-09-06 | 2019-02-05 | 国家电网公司 | Broadband power line carrier communication circuit is pressed in one kind |
| CN107195173A (en) * | 2017-07-19 | 2017-09-22 | 南京新联电子股份有限公司 | A kind of power information acquisition module based on broadband power line carrier mechanics of communication |
| CN112039503A (en) * | 2020-08-04 | 2020-12-04 | 广州彩熠灯光股份有限公司 | Transmission circuit with differential signal out-of-band instruction, chip and electronic equipment |
| CN112039503B (en) * | 2020-08-04 | 2024-03-19 | 广州彩熠灯光股份有限公司 | Transmission circuit, chip and electronic equipment of difference signal out-of-band instruction |
| CN114142891A (en) * | 2021-12-06 | 2022-03-04 | 深圳瑞祺科技有限公司 | P + communication device and control method |
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