CN206020675U - Radiation detector - Google Patents
Radiation detector Download PDFInfo
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- CN206020675U CN206020675U CN201621026097.4U CN201621026097U CN206020675U CN 206020675 U CN206020675 U CN 206020675U CN 201621026097 U CN201621026097 U CN 201621026097U CN 206020675 U CN206020675 U CN 206020675U
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Abstract
The utility model discloses a kind of radiation detector, which has multiple pixels.The radiation detector includes：Substrate；Suprabasil thin film transistor (TFT)；Flash layer, its are located at the side away from substrate of thin film transistor (TFT), for converting radiation into light；And photoelectric sensor, its be located at thin film transistor (TFT) away from substrate and near flash layer side, for converting the light to electric charge.In the layer of two different vertical stackings of the photoelectric sensor with thin film transistor (TFT) in the multiple structure of vertical stacking.Photoelectric sensor includes the photoelectric conversion layer optical coupled with flash layer.
Description
Technical field
This utility model is related to photoelectric technology, more particularly, is related to radiation detector.
Background technology
Directly converted radiation detector generally includes radiation receiver, processor and power supply.Generally, radiation receiver has
By Gd2O2Flash layer, large-area amorphous silicon detector array and reading circuit that S or CsI make.Flash layer will radiate (example
Such as, x-ray photon) it is converted into visible ray.Then, large-scale integrated amorphous silicon detector array will be seen that light is converted into electronics,
Then, these electronics are by reading circuit digitized.Digitized signal is sent to computer and shows for image.
Indirect conversion radiation detector is generally included by Gd2O2Flash layer that S or CsI make, PIN photodiode and thin
Film transistor.Flash layer will radiate (for example, x-ray photon) and be converted into visible ray.PIN photodiode will be seen that light is converted into
The signal of telecommunication shows for image.
Utility model content
This utility model provides a kind of radiation detector, and there are multiple pixels, the radiation detector to include for which：Substrate；
Suprabasil thin film transistor (TFT)；Flash layer, its are located at the side away from substrate of thin film transistor (TFT), for converting radiation into
Light；And photoelectric sensor, its be located at thin film transistor (TFT) away from substrate and near flash layer side, for converting the light to
Electric charge；The layer of two different vertical stackings of the photoelectric sensor with thin film transistor (TFT) in the multiple structure of vertical stacking
In；Photoelectric sensor includes the photoelectric conversion layer optical coupled with flash layer.
Alternatively, radiation detector also includes insulating barrier, and which is located at the side of the close thin film transistor (TFT) of photoelectric conversion layer；
The layer of the three different vertical stackings of photoelectric sensor, thin film transistor (TFT) with insulating barrier in the multiple structure of vertical stacking
In.
Alternatively, photoelectric sensor also includes drive electrode and the sensing electrode with photoelectric conversion layer coupling；Sensing electrode
It is electrically connected to the drain electrode of thin film transistor (TFT).
Alternatively, the via during sensing electrode is by insulating barrier is electrically connected to drain electrode.
Alternatively, sensing electrode is located at the side away from thin film transistor (TFT) of insulating barrier, and photoelectric sensor also includes
Dielectric layer on the side of the close photoelectric conversion layer for being located at sensing electrode.
Alternatively, in the top view of substrate, photoelectric conversion layer is in suprabasil projection and thin film transistor (TFT) in substrate
Projection overlap.
Alternatively, photoelectric conversion layer is configured to substantially receive all light that flash layer is changed.
Alternatively, the area of photoelectric conversion layer is substantially the same with the area of a pixel.
Alternatively, drive electrode and sensing electrode are in same layer.
Alternatively, radiation detector also includes passivation layer, and which is located at the side of the close photoelectric conversion layer of flash layer.
Alternatively, photoelectric conversion layer includes perovskite material.
Alternatively, perovskite material includes CH3NH3PbI3.
Alternatively, substrate is flexible substrates.
Alternatively, radiation detector is x-ray detector.
Description of the drawings
The following drawings is used only for illustrating according to example of the present utility model, rather than limits this utility model
Scope.
Fig. 1 is the diagram of the structure for illustrating conventional indirect conversion radiation detector.
Fig. 2 is the diagram of the structure for illustrating the radiation detector in some embodiments.
Fig. 3 is the diagram of the structure for illustrating the radiation detector in some embodiments.
Specific embodiment
This utility model will be described in further detail referring to the drawings.It should be noted that the description of some embodiments for hereinafter providing
It is used only for example and description, rather than for exhaustive or this utility model is limited to disclosed concrete form.
Conventional radiation detector includes that thin film transistor (TFT) (TFT) array base palte with multiple pixels, each pixel are wrapped
Include TFT.Fig. 1 is the diagram of the structure for illustrating conventional radiation detector.As shown in figure 1, conventional radiation detector includes substrate
101st, the TFT 102 and TFT 102 in substrate 101 lies substantially in photoelectric sensor 104 in same level, TFT 102
With insulating barrier 105 and insulating barrier 105 on the side away from substrate 101 of photoelectric sensor 104 away from substrate 101
Flash layer 103 on side.Generally, photoelectric sensor 104 is PIN photodiode 104.With reference to Fig. 1, PIN photodiode
104 include p type island region domain 106, N-type region domain 108 and the intrinsic region between p type island region domain 106 and N-type region domain 108 107.
Radiation R (for example, X ray) is converted into light L by flash layer 103, and light L is converted into electric charge by PIN photodiode 104.
In conventional radiation detector, as shown in figure 1, photoelectric sensor 104 and TFT 102 are arranged substantially at same water
In plane, for example, transverse shifting of the photoelectric sensor 104 on the horizontal plane will be stopped by TFT 102.Therefore, photoelectric sensing
The photosensitive area of device 104 is limited by the TFT in same level.In conventional radiation detector, larger photosensitive area
Need larger elemental area to mate larger photoelectric sensor, so as to cause aperture opening ratio and detection resolution to reduce.
Therefore, this utility model provides a kind of radiation detector, and which can substantially avoid the limitation due to prior art
Property and shortcoming institute caused by one or more problems.On the one hand, this utility model provides a kind of novel radiation detector, its energy
Limitation and shortcoming institute due to prior art caused by one or more problems are enough substantially avoided.In certain embodiments,
Radiation detector of the present utility model includes multiple pixels, and at least one of the plurality of pixel is with vertical stacking
Multiple structure.In certain embodiments, radiation detector includes：Substrate；Suprabasil thin film transistor (TFT)；Thin film transistor (TFT) remote
Flash layer on the side of substrate, for converting radiation into light；And photoelectric sensor, including positioned at thin film transistor (TFT)
Away from substrate and near flash layer side on photoelectric conversion layer.The photoelectric conversion layer is optical coupled with flash layer, is used for
Convert the light to electric charge.The photoelectric sensor and thin film transistor (TFT) belong to two in the multiple structure of the vertical stacking not
The layer of same vertical stacking.As used herein, term is " optical coupled " represents that at least one coupling element is suitable to directly
Or light is applied to another coupling element indirectly.
As used in originally, between term " vertical stacking " represents that multilamellar or multiple element are arranged in vertical direction
The multilamellar for separating or multiple element, and per layer or each element extend in a certain vertical area or scope of the detector.Can
Selection of land, the multilamellar or multiple element of vertical stacking substantially can align (for example, being arranged to string) in vertical direction.Optional
Ground, the multilamellar or multiple element of vertical stacking overlap each other in suprabasil projection.Alternatively, one or more layers or element can
There is skew in the horizontal relative to other layers or element.Alternatively, one or more layers or element are in suprabasil projection
Not overlap in suprabasil projection with other layers or element.
As used in this, term " flash layer " represents that being configured in radiation detector converts radiation into light
One function layer.Alternatively, flash layer is a cold light layer for including cold light material.
Fig. 2 is the diagram of the structure for illustrating the radiation detector in some embodiments.Fig. 2 is shown in some embodiments
One pixel of radiation detector.With reference to Fig. 2, the radiation detector in the embodiment includes thin in substrate 201, substrate 201
The flash layer for converting radiation into light on film transistor 202, the side away from substrate 201 of thin film transistor (TFT) 202
203 and thin film transistor (TFT) 202 away from substrate 201 and on the side of flash layer 203 for converting the light to electricity
The photoelectric sensor PS of lotus.The multilamellar knot of photoelectric sensor PS and thin film transistor (TFT) 202 in the vertical stacking of radiation detector
In the layer of two different vertical stackings in structure.As shown in Fig. 2 photoelectric sensor PS includes photoelectric conversion layer 204, which is in
Away from substrate 202 and on the side of close flash layer 203 of thin film transistor (TFT) 202.Photoelectric conversion layer 204 is optically coupled to flicker
Layer 203.
In certain embodiments, radiation detector includes the radiation R's for generation such as X ray or gamma ray etc
Radiation source.Radiation detector includes multiple pixels, for example, be used for the light sensitive pixels for sensing radiation R.Radiation R is turned by flash layer 203
A layer light L is changed, and light L is converted into electric charge by photoelectric sensor.Be based on these electric charges, radiation detector export in each pixel with
The corresponding detection signal of amount of radiation.
In certain embodiments, multiple pixels are disposed in substrate.Radiation detector is also included along a first direction
A plurality of grid line and a plurality of data lines along second direction.A plurality of grid line and a plurality of data lines are intersected with each other, form multiple intersections
Point.Grid line is configured to provide scanning signal to corresponding TFT.The detection signal of data wire autoradiolysis in future detector is sent to collection
Into circuit.In response to scanning signal, TFT is turned on, so as to the detection signal from photoelectric sensor is sent to data wire.Each
TFT includes grid, active layer, source electrode, drain electrode and the gate insulation layer between active layer and grid.It is various appropriate to use
Material prepares active layer.The example of appropriate active layer material includes, but not limited to non-crystalline silicon, polysilicon, metal-oxide (example
Such as, ITO, IZTO, IGTO) etc..Source electrode and drain electrode are contacted with active layer.It is alternatively possible between active layer and source electrode, active
Ohmic contact layer is formed between layer and drain electrode, to reduce contact resistance.Alternatively, the sensing of the drain electrode of TFT and photoelectric sensor
Electrode is electrically connected.
Substrate can be prepared using various suitable materials.The example for being suitable to the material of preparation substrate includes, but not limited to
Glass, quartz, polyimides, polyester etc..Alternatively, substrate is flexible substrates (for example, polyimide substrate).Alternatively, base
Substrate (for example, substrate of glass) of the bottom for relative inflexibility.
Flash layer 203 can be prepared using any appropriate scintillation material.In certain embodiments, scintillation material is by spoke
Penetrate (for example, X ray) and be converted into the optical wavelength conversion material of visible ray.The example of scintillation material includes, but not limited to thallium activation
Cesium iodide (CsI (Tl)), the cesium iodide (CsI (Na)) of sodium activation, the sodium iodide (NaI (Tl)) of thallium activation, zinc sulfide or oxygen
Change zinc (ZnS or ZnO), the yttrium aluminum perovskite (YAP (Ce)) of cerium activation, the yttrium-aluminium-garnet (YAG (Ce)) of cerium activation, bismuth germanium oxide
(BGO), europkium-activated calcium fluoride (CaF (Eu)), the Luetcium aluminum garnet (LuAG (Ce)) of cerium activation, the gadolinium siliate of cerium dopping
(GSO), cadmium tungstate (CdWO4；CWO), lead tungstate (PbWO4；PWO), sodium bismuth tungstate (NaBi (WO4) 2；NBWO), tellurium adulterates
Zinc selenide (ZnSe (Te)), the lanthanum bromide (LaBr3 (Ce)) of cerium activation, bromination cerium (CeBr3), the lanthanum chloride (LaCl3 of cerium activation
(Ce)) or its combine.Alternatively, scintillation material is the cesium iodide (CsI (Tl)) of thallium activation.Alternatively, the thickness of flash layer 203
Degree is in the range of about 400 μm to about 1000 μm.
Photoelectric conversion layer 204 can be prepared using any appropriate photoelectric conversion material and any appropriate method.?
In some embodiments, photoelectric conversion material is perovskite material.Alternatively, photoelectric conversion material is organic and inorganic lead halide calcium
Titanium ore material.In certain embodiments, perovskite material is characterised by structural matrix AMX3, with octahedra corner-sharing MX6
The three-dimensional network of formation, wherein M are the metal cation of the octahedral coordination that can adopt X cationes, and A is to be usually located at MX6
The cation in 12 sub-symmetries coordination hole (12-fold coordinated hole) between octahedron.Alternatively, A and M
For metal cation, i.e. perovskite material is perovskite metal oxide material.In certain embodiments, A for organic sun from
Son, M are metal cation, i.e. perovskite material is hybrid inorganic-organic perovskite material.Alternatively, perovskite material is table
It is AMX3, AMX4, A2MX4, A3MX5, the perovskite material of A2A ' MX5 or AMX3-nX ' n up to formula, wherein A and A ' is from organic
Independently selected perovskite material in cation, metal cation and combinations thereof；M is appointing for metal cation or metal cation
Meaning combination；X and X ' is independently selected from the combination in any of anion and anion；N is between 0 to 3.Alternatively, on
State repetition in arbitrary perovskite expression formula or multielement (for example, the A2 or X4 in A2MX4) can be with difference.For example, A2MX4
Structure can essentially be AA ' MXX ' X " X ' ".Alternatively, the repetition in any of the above-described perovskite expression formula or multielement (example
Such as, the A2 or X4 in A2MX4) can be with identical.Cation and anionic group can be any valence mumber.Alternatively, cation and/
Or the valence mumber of anion can be 1,2,3,4,5,6 or 7.Alternatively, cation and/or anion can be monovalent atom.Can
Selection of land, cation and/or anion can be bivalents.Alternatively, cation and/or anion can be triads.
Metal cation can be selected from IIIB, IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA in periodic table of elements d areas
With the metallic element in VA races.Alternatively, metal cation be Li, Mg, Na, K, Rb, Cs, Be, Ca, Sr, Ba, Sc, Ti, V,
Cr、Fe、Ni、Cu、Zn、Y、La、Zr、Nb、Tc、Ru、Mo、Rh、W、Au、Pt、Pd、Ag、Co、Cd、Hf、Ta、Re、Os、Ir、Hg、
B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, P, As, Sb, Bi, O, S, Se, Te, Po or its combination.Alternatively, metal cation
Be d areas in the periodic table of elements IIIB, IVB, VB, VIB, VIIB, VIIIB, IB and Group IIB in transition metal.Can
Selection of land, transition metal be selected from Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Y, Zr, Nb, Tc, Ru, Mo, Rh, W, Au, Pt, Pd,
Ag, Mn, Co, Cd, Hf, Ta, Re, Os, Ir, Hg or its metal in combining.Alternatively, metal cation is selected from IIIA, IVA
With the late transition metal in VA races.Alternatively, metal cation is Al, Ga, In, Tl, Sn, Pb, Bi or its combination.Alternatively,
Metal cation is the semimetal in IIIA, IVA, VA and Group VIA.Alternatively, metal cation be B, Si, Ge, As,
Sb, Po or its combination.Alternatively, metal cation is the alkali metal in IA races.In certain embodiments, metal cation
For alkali metal Li, Mg, Na, K, Rb or Cs.Alternatively, metal cation is the alkaline-earth metal in Group IIA.In some enforcements
In example, metal cation is Be, Ca, Sr or Ba.Alternatively, metal cation be such as Ce, Pr, Gd, Eu, Tb, Dy, Er, Tm,
Nd, Yb or the lanthanide series of its combination.Alternatively, metal cation be Ac, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es,
Fm, Md, No, Lr or the actinidess of its combination.Alternatively, metal cation is divalent metal.Divalent metal non-
Limitative examples include Cu+2、Ni+2、Co+2、Fe+2、Mn+2、Cr+2、Pd+2、Cd+2、Ge+2、Sn+2、Pb+2、Eu+2And Yb+2.Optional
Ground, metal cation is trivalent metal cation.The non-limiting example of trivalent metal includes Bi+3And Sb+3.Alternatively, metal
Cation is Pb+2.Alternatively, organic cation is to include at least one organic group (comprising one or more carbochains or hydrocarbon chain
Or one or more organic groups) cation.The example of appropriate perovskite material includes, but not limited to CH3NH3PbI3、
CH3NH3PbCl3、CH3NH3PbBr3、CH3NH3PbICl2、CH3NH3PbIBr2、CH3NH3PbClI2、CH3NH3PbClBr2、
CH3NH3PbBrI2、CH3NH3PbBrCl2、CH3NH3PbIClBr or its combination.Alternatively, perovskite material is CH3NH3PbI3.
With reference to Fig. 2, the radiation detector in the embodiment also includes the close thin film transistor (TFT) 202 of photoelectric conversion layer 204
Side on insulating barrier 205.The multilamellar of photoelectric sensor PS, thin film transistor (TFT) 202 and insulating barrier 205 in vertical stacking is tied
In the layer of three different vertical stackings in structure.
In certain embodiments, as shown in Fig. 2 photoelectric sensor PS (including photoelectric conversion layer 204) and TFT 202 is hanging down
Nogata is substantially aligned upwards, therefore projections (including the projection of photoelectric conversion layer 204) of the photoelectric sensor PS in substrate 201 with
Projections of the TFT 202 in substrate 201 is overlapped.
In certain embodiments, the area of photoelectric conversion layer 204 is substantially the same with the area of a pixel.For example, exist
In some embodiments, photoelectric sensor PS (including photoelectric conversion layer 204), insulating barrier 205 and TFT 202 base in vertical direction
This alignment, therefore projections (including the projection of photoelectric conversion layer 204) of the photoelectric sensor PS in substrate 201 and TFT 202 and
Projection of the insulating barrier 205 in substrate 201 is overlapped.
Fig. 3 is the diagram of the structure for illustrating the radiation detector in some embodiments.Fig. 3 is shown in some embodiments
One pixel of radiation detector.In certain embodiments, as shown in figure 3, photoelectric sensor PS (including photoelectric conversion layer 204)
In the layer of two different vertical stackings of the TFT 202 in the multiple structure of vertical stacking.However, photoelectric sensor PS
There is skew relative to TFT 202 in (including photoelectric conversion layer 204), therefore photoelectric sensor PS is in substrate 201 in the horizontal
The projection of (including the projection of photoelectric conversion layer 204) with TFT 202 in substrate 201 projection not overlap.
This utility model provides a kind of novel radiation detector, and wherein photoelectric sensor and thin film transistor (TFT) are in vertical
In the layer of two different vertical stackings in the multiple structure of straight stacking.By the vertical area in the region for being different from TFT
Photoelectric sensor is set, it is possible to obtain larger photosensitive area.For example, the opto-electronic conversion in radiation detector of the present utility model
Layer can be prepared to area substantially with the area of a pixel or pixel in insulating barrier area or the face of flash layer
Product is identical.By with larger photosensitive area, the essentially all of light of flash layer conversion can be photoelectrically converted layer reception
Arrive.Therefore, radiation detector of the present utility model is relative to the conventional indirect conversion radiation detector with PIN photodiode
For have higher resolution.
And, the photoelectric conversion layer 204 of larger area can be adopted and easily be prepared based on the painting method of solution.From
And, the manufacturing cost of radiation detector can be reduced.
With reference to Fig. 2, the photoelectric sensor PS of radiation detector of the present utility model also includes drive electrode 206 and and photoelectricity
The sensing electrode 207 of the coupling of conversion layer 204.Sensing electrode 207 is electrically connected to the drain electrode 208 of TFT 202.Alternatively, electricity is driven
Pole 206 provides biasing voltage signal to photoelectric conversion layer 204.
Drive electrode 206 and sensing electrode 207 can be prepared using various appropriate electrode materials.Appropriate electrode material
The example of material includes, but not limited to nanometer silver, Graphene, CNT, molybdenum, aluminum, chromium, tungsten, titanium, tantalum, copper and alloy or contains
The laminate of the material.Drive electrode 206 and sensing electrode 207 can be prepared using various appropriate preparation methoies.For example,
Drive electrode and sensing electrode material (for example, by the coating of sputtering, vapour deposition or solution) can be deposited in substrate；Then
It is patterned (for example, by the photoetching of such as wet etching process) to form drive electrode 206 and sensing electrode
207.Alternatively, drive electrode 206 and sensing electrode 207 can be spun onto in substrate.Alternatively, drive electrode 206 and sense
The thickness of survey electrode 207 is in the range of about 50nm to about 200nm.
Alternatively, drive electrode 206 and sensing electrode 207 may be at same layer.Alternatively, drive electrode 206 and sense
Survey electrode 207 and may be at different layers.For example, sensing electrode 207 can be coupled to the side of photoelectric conversion layer 204, and drive
Electrode 206 can be coupled to the opposite side of photoelectric conversion layer 204.Alternatively, drive electrode 206 and sensing electrode 207 can be with couplings
It is connected to the same side of photoelectric conversion layer 204.
With reference to Fig. 2, radiation detector also includes one or more contact conductor 212, and drive electrode 206 is connected to one by which
Individual or multiple integrated circuits.Alternatively, one or more contact conductor 212 is in same with drive electrode 206 and sensing electrode 207
One layer, as shown in Figure 2.Alternatively, one or more contact conductor 212 can be in drive electrode 206 and sensing electrode 207
Different layers, and drive electrode 206 is connected to by one or more vias.Can be made using various appropriate conductive materials
Standby one or more contact conductor 212.The example of appropriate conductive material include, but not limited to molybdenum, aluminum, silver, chromium, tungsten, titanium,
Tantalum, copper and alloy or the laminate containing the material.
Insulating barrier 205 can be prepared using various appropriate insulant and various appropriate manufacture methods.For example, may be used
To pass through plasma enhanced chemical vapor deposition (PECVD) technique deposition of insulative material in substrate.Appropriate insulant
Example include, but not limited to polyimides, silicon oxide (SiOy), silicon nitride (SiNy, such as Si3N4) and silicon oxynitride
(SiOxNy).
In certain embodiments, sensing electrode 207 is electrically connected to the leakage of TFT 202 by the via 209 in insulating barrier 205
Pole 208.As shown in Fig. 2 sensing electrode 207 is on the side away from thin film transistor (TFT) 202 of insulating barrier 205, and via 209
Extend through the insulating barrier 205.
With reference to Fig. 2, in certain embodiments, photoelectric sensor PS also includes the close photoelectric conversion layer of sensing electrode 207
Dielectric layer 210 on 204 side.Alternatively, drive electrode 206 and sensing electrode 207 are in same layer, and dielectric layer
On the side of the 210 close photoelectric conversion layers 204 for being located at drive electrode 206 and sensing electrode 207.By in photoelectric sensor electricity
(for example, 206) sensing electrode 207 and drive electrode arrange dielectric layer 210 and photoelectric conversion layer 204 between, more can have for pole
Effect ground reduces the leakage current of photoelectric sensor PS.As the leakage current in photoelectric sensor PS is more effectively reduced, therefore may be used
So that photoelectric sensor PS has the signal to noise ratio of lower noise and Geng Gao.In photoelectric sensor electrode and photoelectric conversion layer
The radiation detector that dielectric layer 210 is arranged between 204 can realize higher resolution.
Dielectric layer 210 can be prepared using various appropriate insulant and various appropriate preparation methoies.For example,
Plasma enhanced chemical vapor deposition (PECVD) technique deposit dielectric material in substrate can be passed through.Appropriate electricity Jie
The example of material includes, but not limited to polyimides, silicon oxide (SiOy), silicon nitride (SiNy, such as Si3N4) and nitrogen oxidation
Silicon (SiOxNy).In certain embodiments, dielectric layer 210 have relatively small thickness (for example, with radiation detector its
He compares layer).Alternatively, the thickness of dielectric layer 210 is in the range of about 20nm to 200nm.
With reference to Fig. 2, the radiation detector in the embodiment also includes the close photoelectric conversion layer 204 positioned at flash layer 203
Side on passivation layer 211.Passivation can be prepared using various appropriate passivating materials and various appropriate preparation methoies
Layer 211.For example, it is possible to passing through plasma enhanced chemical vapor deposition (PECVD) technique deposits passivating material in substrate.Suitable
When the example of passivating material include, but not limited to polyimides, silicon oxide (SiOy), silicon nitride (SiNy, such as Si3N4) and
Silicon oxynitride (SiOxNy).
On the other hand, there is provided a kind of method for preparing radiation detector, the radiation detector have multiple pixels, each
Pixel is respectively provided with thin film transistor (TFT).Radiation detector prepared by the method has the multiple structure of vertical stacking.In some enforcements
In example, the method includes：Thin film transistor (TFT) is formed in substrate；Form photoelectric sensor；And photoelectric sensor away from
Flash layer is formed on the side of thin film transistor (TFT).According to the method, photoelectric sensor and thin film transistor (TFT) are formed in vertical stacking
Multiple structure in two different vertical stackings layer in.
In certain embodiments, the step of forming photoelectric sensor is included on the side away from substrate of thin film transistor (TFT)
Form photoelectric conversion layer.Alternatively, flash layer is formed in the side away from thin film transistor (TFT) of photoelectric conversion layer.Can use each
Plant appropriate photoelectric conversion material and various appropriate preparation methoies to prepare photoelectric conversion layer.For example, it is possible to pass through plasma
Body strengthens chemical vapor deposition (PECVD) technique and deposits photoelectric conversion material in substrate.It is alternatively possible to pass through spin coating photoelectricity
Transition material is forming photoelectric conversion layer.Alternatively, photoelectric conversion material is perovskite material.Alternatively, photoelectric conversion material
For organic and inorganic lead halide perovskite material.Alternatively, photoelectric conversion material is CH3NH3PbI3.
In certain embodiments, methods described is additionally included on the side of the close thin film transistor (TFT) of photoelectric conversion layer and is formed
Insulating barrier.Be formed in insulating barrier in the multiple structure of vertical stacking three of photoelectric sensor, thin film transistor (TFT) are different to hang down
In the layer of straight stacking.
Alternatively, photoelectric sensor (including photoelectric conversion layer) and TFT are formed as substantially aligned in vertical direction.Optional
Ground, photoelectric sensor (including photoelectric conversion layer) and TFT are formed as photoelectric sensor in suprabasil projection (including opto-electronic conversion
The projection of layer) Chong Die in suprabasil projection with TFT.
Alternatively, photoelectric sensor (including photoelectric conversion layer), insulating barrier and TFT are formed as substantially right in vertical direction
Together.Alternatively, photoelectric sensor (including photoelectric conversion layer), insulating barrier and TFT are formed as photoelectric sensor in suprabasil throwing
Shadow (including the projection of photoelectric conversion layer) is Chong Die in suprabasil projection with TFT and insulating barrier.
Alternatively, photoelectric sensor (including photoelectric conversion layer) and TFT are formed in the multiple structure of vertical stacking two
In the layer of individual different vertical stacking.Alternatively, however photoelectric sensor (including photoelectric conversion layer) is formed as existing relative to TFT
Transversely there is skew.Alternatively, photoelectric sensor (including photoelectric conversion layer) is formed as photoelectric sensor in suprabasil throwing
Shadow (including the projection of photoelectric conversion layer) is not overlap in suprabasil projection with TFT.
In certain embodiments, the step of forming photoelectric sensor also includes：Form drive electrode and sensing electrode；To drive
Moving electrode and sensing electrode are electrically coupled to photoelectric conversion layer；And sensing electrode is electrically connected to the drain electrode of thin film transistor (TFT).
Alternatively, drive electrode and sensing electrode are formed as thickness in the range of about 50nm to about 200nm.Alternatively, drive
Electrode and sensing electrode can be formed in same layer.Alternatively, drive electrode and sensing electrode can be formed in different layers.Optional
Ground, drive electrode and sensing electrode can be coupled to the same side of photoelectric conversion layer.Alternatively, drive electrode and sensing electrode can
To be coupled to two of photoelectric conversion layer not homonymies.
In certain embodiments, methods described also includes forming one or more contact conductor, and passes through described one
Or drive electrode is electrically connected to one or more integrated circuits by many electrical leads.Alternatively, one or more electrode
Lead can be formed in same layer with drive electrode and sensing electrode.Alternatively, one or more contact conductor 212 can be with
Different layers are formed in from drive electrode and sensing electrode.Alternatively, one or more contact conductor passes through one or many
Individual via is connected to drive electrode.Alternatively, methods described is also included being formed for one or more contact conductor to be connected to
The via of drive electrode.
In certain embodiments, the step of drain electrode that sensing electrode is electrically connected to thin film transistor (TFT), includes：In insulating barrier
Middle formation via；And sensing electrode is electrically connected to the drain electrode of thin film transistor (TFT) by the via.Alternatively, the via shape
Become and extend through insulating barrier.
In certain embodiments, sensing electrode is formed in the side away from thin film transistor (TFT) of insulating barrier.Alternatively, described
Method is additionally included on the side of the close photoelectric conversion layer of sensing electrode and forms dielectric layer.Alternatively, drive electrode and sense
Survey electrode and be formed in same layer, and dielectric layer is formed in the side of the close photoelectric conversion layer of drive electrode and sensing electrode.
By arranging dielectric layer in photoelectric sensor electrode (for example, sensing electrode and drive electrode) and photoelectric conversion layer between, can
More effectively to reduce the leakage current of photoelectric sensor.Due to more effectively reducing the leakage current of photoelectric sensor PS, photoelectricity
Less noise can be produced in sensor PS, it is hereby achieved that higher signal to noise ratio.Turn in photoelectric sensor electrode and photoelectricity
The radiation detector for changing setting dielectric layer between layer can realize higher resolution.
In certain embodiments, methods described is additionally included on the side of the close photoelectric conversion layer of flash layer and forms passivation
Layer.
In order to illustrate to have shown that the above-mentioned description about embodiment of the present utility model with description purpose.Its purpose is not poor
It is exact form disclosed or exemplary embodiment to lift or limit this utility model.Correspondingly, foregoing description should be considered as
It is illustrative and not restrictive.Obviously, many modifications and variations will be apparent for the practitioner of this area
's.The purpose for selecting and describing these embodiments illustrates that the reality of principle of the present utility model and its preferred forms
Application, so that skilled artisan understands that various embodiments of the present utility model and be suitable to special-purpose or contemplated
Embodiment various modifications.Scope of the present utility model be intended to by claims and its equivalent limit, wherein unless
It is otherwise noted, all terms are explained with its most wide reasonable sense.Therefore, term " this utility model ", " current utility model "
Deng interest field is limited to specific embodiment necessarily, and the reference of this utility model exemplary embodiment is not implied right
Restriction of the present utility model, and should not be inferred to this restriction.This utility model is only by spirit and the model of appended claims
Enclose restriction.Additionally, these claim may involve the use of " first ", " second " etc., and it is followed by noun or element.This term
Should be understood to a kind of naming method and be not intended to limit the quantity of the element that is modified by this naming method, unless given
Go out particular number.Described any advantage and benefit are not necessarily suitable whole embodiments of the present utility model.Should recognize
Can be with the case of the scope of the present utility model limited without departing from appended claims to, those skilled in the art
Described embodiment is changed.Additionally, being intended to contribute to the public, nothing without element and constituent in the disclosure
By whether explicitly referring to the element or constituent in appended claims.
Claims (14)
1. a kind of radiation detector, it is characterised in that with multiple pixels, the radiation detector includes：
Substrate；
Suprabasil thin film transistor (TFT)；
Flash layer, its are located at the side away from substrate of thin film transistor (TFT), for converting radiation into light；And
Photoelectric sensor, its be located at thin film transistor (TFT) away from substrate and near flash layer side, for converting the light to electricity
Lotus；In the layer of two different vertical stackings of the photoelectric sensor with thin film transistor (TFT) in the multiple structure of vertical stacking；
Photoelectric sensor includes the photoelectric conversion layer optical coupled with flash layer.
2. radiation detector as claimed in claim 1, it is characterised in that also include insulating barrier, which is located at photoelectric conversion layer
Side near thin film transistor (TFT)；Photoelectric sensor, thin film transistor (TFT) and insulating barrier in vertical stacking multiple structure three
In the layer of individual different vertical stacking.
3. radiation detector as claimed in claim 2, it is characterised in that photoelectric sensor also includes and photoelectric conversion layer coupling
Drive electrode and sensing electrode；Sensing electrode is electrically connected to the drain electrode of thin film transistor (TFT).
4. radiation detector as claimed in claim 3, it is characterised in that sensing electrode is by the via electrical connection in insulating barrier
To drain electrode.
5. radiation detector as claimed in claim 3, it is characterised in that sensing electrode be located at insulating barrier away from film crystal
The side of pipe, and photoelectric sensor also includes the dielectric layer on the side of the close photoelectric conversion layer of sensing electrode.
6. radiation detector as claimed in claim 1, it is characterised in that in the top view of substrate, photoelectric conversion layer is in base
Projection on bottom is Chong Die in suprabasil projection with thin film transistor (TFT).
7. radiation detector as claimed in claim 1, it is characterised in that photoelectric conversion layer is configured to receive flash layer to be changed
Essentially all of light.
8. radiation detector as claimed in claim 1, it is characterised in that the area of the area of photoelectric conversion layer and a pixel
Substantially the same.
9. radiation detector as claimed in claim 5, it is characterised in that drive electrode and sensing electrode are in same layer.
10. radiation detector as claimed in claim 1, it is characterised in that also include passivation layer, which is located at the close of flash layer
The side of photoelectric conversion layer.
11. radiation detectors as claimed in claim 1, wherein photoelectric conversion layer include perovskite material.
12. radiation detectors as claimed in claim 11, it is characterised in that perovskite material includes CH3NH3PbI3.
13. radiation detectors as claimed in claim 11, it is characterised in that substrate is flexible substrates.
14. radiation detectors as claimed in claim 1, it is characterised in that radiation detector is x-ray detector.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621026097.4U CN206020675U (en) | 2016-08-31 | 2016-08-31 | Radiation detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621026097.4U CN206020675U (en) | 2016-08-31 | 2016-08-31 | Radiation detector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018039962A1 (en) * | 2016-08-31 | 2018-03-08 | Boe Technology Group Co., Ltd. | Radiation detector and fabricating method thereof |
| CN111989595A (en) * | 2018-04-19 | 2020-11-24 | 新加坡国立大学 | Perovskite-based nano-scintillators |
| CN115911150A (en) * | 2022-11-15 | 2023-04-04 | 派镀科技(深圳)有限公司 | Array photoelectric laser power meter and preparation method thereof |
-
2016
- 2016-08-31 CN CN201621026097.4U patent/CN206020675U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018039962A1 (en) * | 2016-08-31 | 2018-03-08 | Boe Technology Group Co., Ltd. | Radiation detector and fabricating method thereof |
| CN111989595A (en) * | 2018-04-19 | 2020-11-24 | 新加坡国立大学 | Perovskite-based nano-scintillators |
| CN111989595B (en) * | 2018-04-19 | 2024-03-15 | 新加坡国立大学 | Perovskite-based nano scintillator |
| CN115911150A (en) * | 2022-11-15 | 2023-04-04 | 派镀科技(深圳)有限公司 | Array photoelectric laser power meter and preparation method thereof |
| CN115911150B (en) * | 2022-11-15 | 2024-01-30 | 派镀科技(深圳)有限公司 | Array photoelectric laser power meter and preparation method thereof |
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