CN205992888U - Thin-film body voltage controlled oscillator - Google Patents
Thin-film body voltage controlled oscillator Download PDFInfo
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- CN205992888U CN205992888U CN201620408086.6U CN201620408086U CN205992888U CN 205992888 U CN205992888 U CN 205992888U CN 201620408086 U CN201620408086 U CN 201620408086U CN 205992888 U CN205992888 U CN 205992888U
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- electric capacity
- transistor
- frequency
- signal
- resistance
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Abstract
A kind of thin-film body voltage controlled oscillator, belongs to communication technical field.Thin-film body voltage controlled oscillator includes transistor, the first electric capacity, the second electric capacity, the 3rd electric capacity, FBAR and resistance, wherein, the first end of the first electric capacity is connected to the colelctor electrode of transistor and the first end of the 3rd electric capacity, and the second end is connected to the emitter stage of transistor and the first end of the second electric capacity；Second end of the second electric capacity is connected to the base stage of transistor and the second end of FBAR；Second end of the 3rd electric capacity is connected to the first end of FBAR and is connected to voltage controling end；The first end of resistance is connected to the colelctor electrode of transistor and is connected to power supply, and the second end is connected to the base stage of transistor.The thin-film body voltage controlled oscillator that this utility model provides, can mitigate weight and reduce volume.
Description
Technical field
This utility model is related to a kind of thin-film body voltage controlled oscillator, belongs to communication technical field.
Background technology
Voltage controlled oscillator integrated level in communication module of the prior art is not high, leads to volume larger.
Content of the invention
For overcoming technical problem present in prior art, goal of the invention of the present utility model is to provide a kind of thin-film body pressure
Controlled oscillator, its integrated level is high, volume Miniaturizable.
For realizing described goal of the invention, this utility model provides a kind of thin-film body voltage controlled oscillator, it include transistor, the
One electric capacity, the second electric capacity, the 3rd electric capacity, FBAR and resistance, wherein, the first end of the first electric capacity is connected to crystalline substance
The colelctor electrode of body pipe and the first end of the 3rd electric capacity, the second end is connected to the emitter stage of transistor and the first end of the second electric capacity；
Second end of the second electric capacity is connected to the base stage of transistor and the second end of FBAR；Second end of the 3rd electric capacity
It is connected to the first end of FBAR and be connected to voltage controling end；The first end of resistance is connected to the collection of transistor
Electrode is simultaneously connected to power supply, and the second end is connected to the base stage of transistor.
Compared with prior art, the thin-film body voltage controlled oscillator that this utility model provides, integrated level is high, and volume can be small-sized
Change.
Brief description
Fig. 1 is the composition frame chart of the communication module that this utility model provides；
Fig. 2 is the composition frame chart of the frequency source of communication module that this utility model provides；
Fig. 3 is voltage controlled oscillator (VCO) circuit diagram of the communication module that this utility model provides
Fig. 4 is the circuit diagram of the band filter of communication module that this utility model provides；
Fig. 5 is the circuit diagram of the AGC of communication module that this utility model provides.
Specific embodiment
Fig. 1 is the composition frame chart of this utility model communication module, as shown in figure 1, the communication module that this utility model provides
Including transmitter unit, local frequency generation units 11, frequency source 10 and antenna 1, wherein, frequency source 10 is used for producing fixing frequency
Rate signal；The multiple frequency signal of signal generation that local frequency generation units 11 produce according to frequency source 10, including being supplied to tune
The altofrequency carrier signal of device processed, it is supplied to the high-frequency signal of frequency mixer and is supplied to the intermediate-freuqncy signal of cymoscope；Transmitter unit,
Data message to be sent for data processor is encoded and modulated on high frequency carrier, then electromagnetism is converted to by antenna
Ripple is dealt in the air.Transmitter unit includes encoder 16, manipulator 15, power amplifier 14 and band filter (BPF) 13, its
In, encoder 16 is used for for data message to be sent for data processor carrying out source and channel coding, to be sent to be formed
Baseband signal；Manipulator 15 is used for form modulated signal on modulates baseband signals to be sent to high frequency carrier, and is supplied to
Power amplifier 14, power amplifier 14 carries out power amplification and is filtered through band filter 13, then to modulated signal
Send through switch 16 and antenna 1.
Communication module also includes receiver unit, and receiver unit includes band filter (BPF) 2, small signal amplifier (AMP)
3rd, band filter (BPF) 4, multiplying mixer 5, intermediate-frequency filter (MPF) 6, intermediate frequency amplifier (AMP) 7, multiplication cymoscope 8,
Low pass filter (LPF) 9 and decoder 17, wherein, the signal of telecommunication that band filter 2 is used for reception antenna 1 is received is filtered
Ripple；The signal that small signal amplifier 3 is used for band filter 2 is provided is amplified, and is supplied to band filter 4 to enter one
The filtering of step；Frequency mixer 5 is used for the high-frequency signal that the signal that band filter 4 provides is produced with this frequency generation units 11
It is mixed, and taken out intermediate-freuqncy signal through intermediate-frequency filter 6；The signal that intermediate frequency amplifier 7 is used for intermediate-frequency filter 6 is provided enters
Row intermediate frequency amplifies, and is supplied to multiplication cymoscope 8；Multiplication cymoscope 8 makes the intermediate-freuqncy signal that local frequency generation units 11 produce
The signal being provided with intermediate frequency amplifier 7 is multiplied, and low-pass filtered device 9 takes out baseband signal, and baseband signal is through decoder
The data message that transmission of making a start is taken out in 17 decodings is then supplied to data processor.
Local frequency generation units 11 are used for producing the high-frequency signal being supplied to multiplying mixer 5, and it at least includes frequency multiplication
Number is the doubler 115 of P, phase shifter 116, frequency multiplication are W doubler, phase shifter 117, multiplier 113, multiplier 114, addition
Device is used for the v to the signal that frequency source 10 produces with having the doubler 111 that frequency is H, doubler 1150=V0cos2πf0t
Carry out P frequency multiplication and obtain signal：
v1=V1cos2πPf0t
Phase shifter 116 is to v1=V1cos2πPf0T phase shift, phase shiftObtain v2=V1sin2πPf0t.
The doubler of W is used for the signal v that frequency source 10 is produced0=V0cos2πf0T carries out W frequency multiplication and obtains signal：v3=
V3cos2πWf0t；
Phase shifter 117 is to v3=V3cos2πWf0T phase shift, phase shiftObtain v4=V3sin2πWf0t；
Multiplier 113 makes v3=V3cos2πWf0T and v2=V1sin2πPf0T is multiplied；Multiplier 114 makes v4=V3sin2π
Wf0T and v1=V1cos2πPf0T is multiplied, and is added through adder, obtains：
V3sin2πWf0t·V1cos2πPf0t±V3cos2πWf0t·V1sin2πPf0t
=V3V1sin 2π(Wf0±Pf0)t
Then this signal is supplied to doubler 111, the frequency multiplication through H multiple obtains：
v5=V5sin2π[H(W±P)·f0] t,
Local frequency generation units 11 are additionally operable to produce the high-frequency carrier signal being supplied to manipulator 15
This signal is the high-frequency carrier signal being supplied to manipulator 15 as transmitting terminal.
Local frequency generation units 11 are additionally operable to produce the intermediate-freuqncy signal being supplied to multiplication cymoscope 8, and it at least includes point
Frequency ratio is the frequency divider 112 of R, and frequency divider 112 is in the signal v that frequency source 10 is produced0=V0cos2πf0T carries out R frequency dividing and obtains
It is supplied to the intermediate-freuqncy signal of multiplication cymoscope 8, that is,
The numerical value availability data processor of above-mentioned frequency dividing ratio R and frequency H, E, P, W, S sets according to user and controls
System.
Fig. 2 is the composition frame chart of the frequency source of communication module that this utility model provides, as shown in Fig. 2 this utility model
The frequency source providing includes：Crystal oscillator 101, frequency dividing ratio are the frequency divider 102 of K, phase discriminator 103, low pass filter 104,
Voltage controlled oscillator VCO 105 and frequency dividing ratio are the frequency divider 106 of N, and wherein, crystal oscillator 101 is used for producing fixed frequency signal
And it is supplied to frequency divider 102, frequency divider 102 is divided to crystal oscillator 101 and is supplied to phase discriminator 103；VCO105 root
Produce VCO signal according to reference to the voltage that Vf and low pass filter provide, and divided device 106 divides the mirror then providing
Phase device 103, phase discriminator 103 compares frequency divider 103 and the phase place of signal of frequency divider 106 offer and low-pass filtered device LPF filters
Except high frequency thus producing voltage signal, this voltage signal is superimposed the frequency signal to control VCO to produce further with Vf.
Fig. 3 is the circuit diagram of the voltage controlled oscillator (VCO) of communication module that this utility model provides.As shown in figure 3, this reality
With new offer thin-film body voltage controlled oscillator, it is humorous that it includes transistor T3, electric capacity C5, electric capacity C4, electric capacity C3, conductive film bulk acoustic wave
Shake the R10 of device FBAR3 and resistance, and wherein, the first end of electric capacity C4 is connected to the colelctor electrode of transistor and the first end of electric capacity C3,
Second end is connected to the emitter stage of transistor T3 and the first end of electric capacity C5；Second end of electric capacity C5 is connected to the base stage of transistor
The second end with FBAR FBAR3；Second end of electric capacity C3 is connected to the of FBAR FBAR3
One end is simultaneously connected to voltage controling end through resistance R11；The first end of the R10 of resistance is connected to the colelctor electrode of transistor T3 and connects
In power supply Ec, the second end is connected to the base stage of transistor T3.
Fig. 4 is the circuit diagram of the band filter of communication module that this utility model provides, as shown in figure 4, this practicality is new
The band filter that type provides includes inductance L, electric capacity C, varactor D1 and resistance R1, wherein, electric capacity C and varactor
D1 is in series composition series arm, and series arm is in parallel with inductance L, so can form by voltage-controlled band filter,
The first end of resistance R1 is connected on the intermediate node that electric capacity C and varactor D1 are in series, and second end of resistance R1 connects
Control voltage.
Fig. 5 is the circuit diagram of the AGC of communication module that this utility model provides.As shown in figure 5, what this utility model provided
AGC control voltage includes proportional amplifier, and it includes operational amplifier IC, resistance R5, resistance R6, resistance R7, resistance R8 and steady
Pressure diode D3, wherein, the first end of resistance R7 is connected to the inverting input of operational amplifier IC, and the second end is connected to detection
The outfan of the low pass filter 9 of device is to provide AGC voltage VAGC；Resistance R5 is connected to operational amplifier IC's
Between outfan and inverting input；Resistance R6 and resistance R8 is in series and is connected between power supply ECC and ground, resistance R6 and electricity
The intermediate node that resistance R8 is in series is connected to the same item input of operational amplifier, to provide with reference to electricity to operational amplifier IC
Pressure：The negative pole of Zener diode D3 is connected to power supply, and positive pole is to the power end of operational amplifier IC
Voltage is provided.
AGC control circuit also includes PNP transistor T1, and its emitter stage is connected to the positive pole of Zener diode, base stage warp
Resistance R4 is connected to the outfan of operational amplifier, and colelctor electrode is connected to the base stage of transistor T2 through resistance R3.AGC control circuit
Also include NPN transistor T2, its grounded emitter, colelctor electrode is connected to reference voltage Vf through resistance R9, diode D2 successively,
It is simultaneously coupled to second end of the resistance R1 of wave filter.
Reference voltage Vf value in this utility model is controlled according to program by data processor.
Although below having combined accompanying drawing to have made to elaborate to according to the design of this utility model purpose and example, ability
Field technique personnel it should be appreciated that on the premise of conceiving without departing from this utility model, any are made based on this utility model
Modifications and variations still fall within the content in this utility model protection domain.
Claims (1)
1. a kind of thin-film body voltage controlled oscillator it is characterised in that include transistor, the first electric capacity, the second electric capacity, the 3rd electric capacity,
FBAR and resistance, wherein, the first end of the first electric capacity is connected to the colelctor electrode of transistor and the 3rd electric capacity
First end, the second end is connected to the emitter stage of transistor and the first end of the second electric capacity；Second end of the second electric capacity is connected to crystalline substance
The base stage of body pipe and the second end of FBAR；Second end of the 3rd electric capacity is connected to FBAR
First end is simultaneously connected to voltage controling end；The first end of resistance is connected to the colelctor electrode of transistor and is connected to power supply, the second end
It is connected to the base stage of transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620408086.6U CN205992888U (en) | 2016-04-29 | 2016-04-29 | Thin-film body voltage controlled oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620408086.6U CN205992888U (en) | 2016-04-29 | 2016-04-29 | Thin-film body voltage controlled oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205992888U true CN205992888U (en) | 2017-03-01 |
Family
ID=58101416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620408086.6U Expired - Fee Related CN205992888U (en) | 2016-04-29 | 2016-04-29 | Thin-film body voltage controlled oscillator |
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| CN (1) | CN205992888U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221733A (en) * | 2017-06-06 | 2017-09-29 | 中国科学院声学研究所 | A kind of HBAR resonators and tunable microwave oscillator |
-
2016
- 2016-04-29 CN CN201620408086.6U patent/CN205992888U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221733A (en) * | 2017-06-06 | 2017-09-29 | 中国科学院声学研究所 | A kind of HBAR resonators and tunable microwave oscillator |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170301 Termination date: 20180429 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |