CN205985068U - Interior ceramic printed circuit board of establishing reflection layer, being used for LED encapsulation - Google Patents
Interior ceramic printed circuit board of establishing reflection layer, being used for LED encapsulation Download PDFInfo
- Publication number
- CN205985068U CN205985068U CN201620814119.7U CN201620814119U CN205985068U CN 205985068 U CN205985068 U CN 205985068U CN 201620814119 U CN201620814119 U CN 201620814119U CN 205985068 U CN205985068 U CN 205985068U
- Authority
- CN
- China
- Prior art keywords
- layer
- reflection layer
- circuit board
- face
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model provides an interior ceramic printed circuit board of establishing reflection layer, being used for LED encapsulation, is including being used for the electrical insulation and/or being used for heat conduction / radiating ceramic base bottom, with the ceramic base bottom each other on the whole parallel relative both sides surface be called basement A face and basement B face respectively, this one side of basement A face is provided with and is used for fixedly or welds the electronic circuit of LED chip and/or be used for heat conduction, the radiating copper that covers, this one side of basement B face is provided with the reflection layer for it is that reflection LED luminous element sends and see through the light of ceramic base bottom, the another side of reflection layer is direct exposed or be provided with the protective layer. Reflection layer bare surface self takes place the passivation reaction makes the reflection layer obtain the protection or coat the protective layer not prevented oxidation, maintaining good's reflectance characteristics for a long time with air direct contact, the light decay that the protective layer can avoid the physics chemical change in reflection stratum to bring, and can be through the next compound coefficient of heat conductivity and the structural strength that improve package substrate greatly of the thickness that increases the protective layer metal.
Description
Technical field
This utility model is related to semiconductor packages and application, the single or multiple lift that more particularly, to encapsulation LED is used
Ceramic printed-circuit board and its manufacture method, the more particularly to interior ceramic printed-circuit board setting reflection layer and its manufacturer
Method.
Background technology
The printed circuit board (PCB) with pottery as carrier for the prior art, the physical and chemical stability of its base ceramic material, have
The advantages of high-fire resistance, high insulation resistance and low thermal coefficient of expansion etc., industry is made to attract attention.The appearance of ceramic substrate overcomes resin
Tellite is difficult to the shortcoming overcoming, and is widely used for making ceramic printed-circuit board in LED application.
Necessary not only for substrate, there is good heat conduction and heat sinking function in the application of LED in addition it is also necessary to the optics that had
After characteristic makes to weld or secure LED chip, the performance of its overall optical characteristics is excellent.
In the LED encapsulation ceramic printed-circuit board of prior art as shown in Figure 7, some ceramic materials such as three oxidation two
Aluminum or sapphire class material, have the characteristic of printing opacity, and the light that LED sends can be transmitted to non-light direction from ceramic substrate, have few
Part also can be absorbed by substrate, thus increasing light loss, in order to overcome such problem, also has in ceramic electrical in prior art
The one side of road plate weld or fixing LED is provided with reflecting layer, and the light being emitted onto on ceramic circuit board reflects from light direction
Go to reduce overall light loss.
In prior art, the one side in ceramic circuit plate weld or fixing LED is provided with reflecting layer, and these reflecting layer are usual
For the coat of metal；The silica gel due to illumination or with air directly contact or package metals reflected coat layer for these coat of metal one side
Oxygen can also be passed through, therefore these coats of metal are very easy to oxidation and sulfuration leads to reflection efficiency step-down to affect whole LED
The light output characteristic of packaging.
In prior art, the metallic reflector of the one side setting in ceramic circuit plate weld or fixing LED not only needs and pottery
The substrate of porcelain circuit board and circuit directly have the electrical characteristic that good mechanical attachment characteristic is also required for, if desired for and pottery
Circuit part insulation in porcelain circuit board；But the ceramic circuit board with metallic reflection coating also needs to through welding LED core
The processes such as piece are so that metallic reflector is very easy to short-circuit with the circuit part in ceramic circuit board or does not reach safety standard
Require, need the technological measure that special insulating barrier or correlation are set to prevent its short circuit and improve insulation characterisitic；Real in technique
Existing extremely difficult, difficulty is high, and efficiency is low.
Explanation of nouns：
Silicon nitride：Its English is Silicon nitride；Si3N4Pottery is a kind of covalent key compound, basic structure
Unit is [SiN4] tetrahedron, silicon atom is located at tetrahedral center, there being four nitrogen-atoms about, is located at four sides respectively
Four summits of body, then in the form of every three tetrahedrons share an atom, form continuous and firm in three dimensions
Network.A lot of performances of silicon nitride are all attributed to this structure.Si3N4Thermal coefficient of expansion is low, thermal conductivity is high, therefore it is heat-resisting
Impact is splendid.
Aluminium nitride：Its English is Aluminum nitride, is abbreviated as AIN；Covalently key compound, belongs to hexagonal crystal system,
The crystal structure of Pb-Zn deposits type, white or canescence.Aluminium nitride is atomic crystal, belongs to diamond like carbon nitride, highest can be steady
Determine to 2200 DEG C.Room temperature strength is high, and intensity is good compared with slow, heat conductivity with the rising decline of temperature, and thermal coefficient of expansion is little, is good
Heat shock resistance material.The ability of resist melt metal attack is strong, aluminium nitride or electrical insulator, and dielectric properties are good, are potteries
One of preferred material of circuit board support plate.
Aluminium sesquioxide：Namely aluminium oxide, chemical symbol：, pure aluminium oxide is white amorphous powder, custom
Claim Alumina, density 3.9-4.0g/cm3, 2050 DEG C of fusing point, 2980 DEG C of boiling point, water insoluble, it is amphoteric oxide, can be dissolved in no
In machine acid and alkaline solution, mainly there are α type and two kinds of variants of γ type, industrial can extract from bauxite.In alpha-type aluminum oxide
In lattice, oxonium ion is that six sides are tightly packed, and aluminium ion is symmetrically dispersed in the octahedral coordination center that oxonium ion surrounds, lattice
Can be very big, therefore fusing point, boiling point are very high.Alpha-type aluminum oxide is water insoluble and sour, and industrial also referred to as alumina, is the basic of metallic aluminium processed
Raw material；It is also used for making various refractory brick, fire-clay crucible, refractory tube, high temperature resistant experimental apparatus；Grinding agent, fire retardant also can be made, fill out
Charge etc.；High-purity alpha-type aluminum oxide still produces Alundum, synthetic ruby and sapphire raw material；It is additionally operable to produce now
Plate base for large scale integrated circuit.
LED is the abbreviation of English Light Emitting Diode, and Chinese implication is light emitting diode.
COB is the abbreviation of English Chip On Board, and Chinese implication is chip on board；Chip on board encapsulation is bare chip
One of mounting technology, on a printed circuit, chip is electrically connected with lead suture side with substrate for semiconductor chip handing-over attachment
Method is realized, and is covered with resin to guarantee reliability.
COB light source：LED plane light source or integrated optical source are encapsulated also known as COB light source by COB；COB light source is mainly transported at present
In indoor and outdoor lamp lighting, the such as shot-light of interior, Down lamp, Ceiling light, lamp affixed to the ceiling, daylight lamp and light bar, the street lamp of outdoor,
The wall lamp of bulkhead lamp, flood light and current urban landscape, luminescent characters etc..
OSP is the abbreviation for English Organic Solderability Preservatives, and Chinese implication is organic guarantor
Weldering film, also known as copper-protection agent, English is also referred to as Preflux.OSP refers to printed circuit board (PCB) (PCB) Copper Foil in the present patent application
A kind of technique meeting RoHS command request of surface treatment.Briefly, OSP is exactly on clean naked copper surface, to change
The method learned grows one layer of organic coating.This tunic has anti-oxidation, heat shock resistance, and moisture-proof, in order to protect copper surface in normal
Do not continue to get rusty in state environment, aoxidize or vulcanize;But in follow-up welding high temperature, this kind of protecting film must be easy to again
Removed rapidly by scaling powder, the clean copper surface exposed so can be made to be able within the extremely short time with melting scolding tin immediately
It is combined into firm solder joint.
Utility model content
The technical problems to be solved in the utility model is to avoid the pottery of prior art LED encapsulation ceramic printed-circuit board
Porcelain substrate printing opacity, adds plating reflecting layer complex process on LED chip solder side and easy oxidation leads to reflection efficiency to reduce not
In place of foot, a kind of LED encapsulation ceramic printed-circuit board being provided with reflecting layer on non-LED chip solder side is proposed.
This utility model employed technical scheme comprise that for the described technical problem of solution and sets reflection layer in one kind, is used for LED
The ceramic printed-circuit board (100) of encapsulation, including the ceramic base bottom for being electrically insulated and/or for heat conduction/radiating, this is made pottery
Porcelain basal layer mutually parallel on the whole relative both side surface is referred to as substrate A face and substrate B face；On described substrate A face
It is provided with the region for fixing or welding LED chip and the electronic circuit electrically connecting with chip and/or be used for heat conduction, radiating
Cover copper；It is provided with reflection layer, reflection layer is used for penetrating LED each on substrate A face toward non-light direction on described substrate B face
Going out and pass through the light of described ceramic base bottom leakage, reflecting back, thus improving total luminous efficiency toward light direction.
Described reflection layer is covered by metal material cloth and constitutes, and is in aluminum Al, golden Au, silver-colored Ag, rhodium Rh and these metals of copper Cu
Any one or two kinds and two or more combination constitute.
The one side of described reflection layer is closely overlying on the substrate B face of described ceramic base bottom, this reflection layer another
Matcoveredn is then arranged on face.
The thickness of described protective layer is more than or equal to 100 nanometers.
The material of described protective layer is copper Cu or nickel or silicon dioxide SiO2.
When described protective layer is copper Cu, palpus plating oxidation barrier film in its one side with external contact, this antioxidation is thin
The material of film is nickel and/or golden Au.
When described protective layer is copper Cu, the one side with external contact for this protective layer is OPS, that is, covers the organic guarantor of last layer
Weldering film.
The thickness of described reflection layer is 50 nanometers to 0.300 millimeter.
The thickness of described reflection layer is 100 nanometers to 500 nanometers.
The thickness of described ceramic base bottom is 0.100 millimeter to 1.000 millimeters.
The thickness of described ceramic base bottom is 0.100 millimeter to 0.635 millimeter.
It is additionally provided with transition zone 150 between described reflection layer and described protective layer.
The material of described transition zone includes any one or two kinds and two in titanium Ti, tungsten W, chromium Cr and these metals of molybdenum Mo
Plant above combination.
The material of described transition zone includes titanium Ti, tungsten W, chromium Cr and these metals of molybdenum Mo and forms Ti- with metallic copper Cu respectively
Any one or two kinds and two kinds in Cu CTB alloy, W-Cu tungsten-copper alloy and/or Cr-Cu chrome copper, Mo-Cu alloy with
On combination.
The material of described transition zone also includes nonmetallic silicon dioxide SiO2.
The thickness of described transition zone is 10 nanometers to 600 nanometers.
This utility model is to solve the technical scheme that described technical problem adopts and can also be to set reflection layer, use in one kind
Manufacture method in the ceramic printed-circuit board of LED encapsulation comprises the following steps：A1. in one piece of slice-shaped, it is used for being electrically insulated
And/or the ceramic base bottom for heat conduction/radiating, its mutually parallel on the whole relative both side surface is referred to as base
Bottom A face and substrate B face；Region for fixing or welding LED chip is provided with described substrate A face and electrically connects with chip
Electronic circuit and/or for heat conduction, radiating cover copper；And then vacuum plating a layer thickness is received 60 on described substrate B face
The reflection layer of rice to 200 nanometers, for projecting LED each on substrate A face toward non-light direction and passing through described ceramic bases
The light of layer leakage, reflects back, thus improving total luminous efficiency toward light direction；The material of described reflection layer be aluminum Al,
Any one in golden Au, copper Cu, rhodium Rh and/or silver-colored these metals of Ag or two kinds and two or more combinations.
The manufacture method of described ceramic printed-circuit board, also includes step：A3：The one side of described reflection layer is closely overlying on
On the substrate B face of described ceramic base bottom, on the another side of this reflection layer, then vacuum plating a layer thickness is at 400 nanometers extremely
600 nanometers of protective layer；The material of described protective layer is copper Cu or nickel or silicon dioxide SiO2.
The manufacture method of described ceramic printed-circuit board, protects after stating step A1 on the implementation, described in plating in A3 step
Before sheath, also include step A2：Described reflection layer is closely overlying on the substrate B face of described ceramic base bottom, in described light
On the another side in reflecting layer, first vacuum plating a layer thickness is in 400 nanometers to 600 nanometers of transition zone；The material of described transition zone
Matter includes any one or two or more combinations in Titanium Ti, tungsten w, chromium Cr and these metals of molybdenum Mo；Or this mistake
The material crossing layer includes Titanium Ti, tungsten W, chromium Cr and molybdenum Mo Ti-Cu CTB alloy, W-Cu tungsten copper respectively with Ni metal composition
Any one in alloy or Cr-Cu chrome copper, molybdenum copper Mo-Cu alloy or two or more combinations；And described transition zone
Material also include nonmetallic silicon dioxide SiO2；Just implement above-mentioned steps A3 after step A2 so that described transition zone
It is arranged between described reflection layer and protective layer.
Of the present utility model have the technical effect that：1. because the one side of this reflection layer is directly coupled with substrate B face, Bu Huiyu
Air directly contact, it is therefore prevented that the oxidation of reflecting surface or other physicochemical change, oxidation, can allow the long-term maintenance of reflecting surface good
Good reflection characteristic；If the another side of this reflection layer not other layers of plating, also can be passivated in atmosphere, in Surface Creation property
Highly stable aluminium sesquioxide layer, itself has good protective effect.2. protective layer can avoid the physical chemistry in reflecting layer
Change the light decay bringing；On the other hand, when protective layer is high-thermal conductive metal, reach certain thickness and can also greatly improve encapsulation
The composite heat-conducting coefficient of substrate and structural strength；3. on the one hand transition zone increases the adhesion between protective layer and reflecting layer, separately
Outer one side also improves composite heat-conducting coefficient and the structural strength of base plate for packaging to a certain extent.
Brief description
Fig. 1 be this utility model " in set reflection layer, for LED encapsulation ceramic printed-circuit board " each preferred embodiment
Light path schematic diagram；The in figure direction of arrow is the direction of light；
Fig. 2 is the axonometric projection decomposing state schematic diagram of one of described preferred embodiment；
Fig. 3 is the orthographic projection diagrammatic side-view cross-sectional schematic diagram of one of described preferred embodiment；
Fig. 4 is the close-up schematic view of part A in Fig. 3；
Fig. 5 is the orthographic projection diagrammatic side-view cross-sectional schematic diagram of the two of this utility model preferred embodiment；
Fig. 6 is the close-up schematic view of part B in Fig. 5；
Fig. 7 is the light path schematic diagram of prior art LED encapsulation ceramic printed-circuit board, and the in figure direction of arrow is the side of light
To；
The silica gel of printing opacity is coated with that face fixing LED chip in figs. 1 and 7 above ceramic bases, that is, in Fig. 1
In for fixing or welding electronic circuit and/or the described substrate A face 112 of covering copper for heat conduction, radiating of LED chip
The part of printing opacity is additionally provided with LED chip, the part of these printing opacities includes covering the translucent silica gel on LED chip, if doing
The LED product of white light, then be also possible in silica gel be mixed with fluorescent material；If doing the LED product of purple light, quartz glass can be used
Or the lens of permeable purple wave band cover LED chip and cover without silica gel；
Substrate A face 112 in figure 3 is used for fixing or weld the electronic circuit of LED chip and/or is used for heat conduction, radiating
Cover copper, this substrate A face 112 be also referred to as LED chip stationary plane；The one side of protective layer 160 and transition zone 150 in figure 3
Connect, the another side of protective layer 160 is used for the fixed installation of LED encapsulation ceramic printed-circuit board 100 entirety, also referred to as installs
Stationary plane.
Specific embodiment
With reference to each accompanying drawing, content of the present utility model is described in further detail.
In an embodiment of the LED encapsulation ceramic printed-circuit board 100 being provided with reflecting layer as shown in Figures 1 to 4,
This LED encapsulation ceramic printed-circuit board 100 includes the ceramic base bottom 110 for being electrically insulated and/or for heat conduction/radiating,
The mutually parallel on the whole relative both side surface of described ceramic base bottom 110 is referred to as substrate A face 112 and substrate B
Face 114；This side of described substrate A face 112 be provided with electronic circuit for fixing or welding LED chip and/or for heat conduction,
Radiate covers copper；This side of described substrate B face 114 is provided with reflection layer 130, and this reflection layer 130 is used for reflecting LED and lights
Light that body sends and through ceramic base bottom.The one side of described reflection layer 130 is with the substrate of described ceramic base bottom 110
B face 114 couples, and the another side of described reflection layer 130 is additionally provided with protective layer 160.Described reflection layer 130 and described guarantor
It is additionally provided with transition zone 150 between sheath 160.
Method for manufacturing this kind of ceramic printed-circuit board comprises the following steps, C1：Substrate in ceramic base bottom 110
B face 114 side vacuum plating a layer thickness is in 60 nanometers to 100 nanometers of reflection layer 130；Described reflection layer 130 is arranged
On the substrate B face 114 of ceramic base bottom 110；Described reflection layer 130 is the reflecting layer of metal material, described metal material
For any one in this five kinds of metals of aluminum, gold, silver, copper and rhodium or two or more combinations；C2：Described reflection layer 130
Simultaneously couple with the substrate B face 114 of described ceramic base bottom 110；Vacuum plating one on the another side of described reflection layer 130
Thickness degree is in 400 nanometers to 600 nanometers of transition zone 150；The material of described transition zone 150 include metal material titanium Ti, tungsten w,
Any one in these four metals in chromium Cr, molybdenum Mo or two or more combinations；Or the material of described transition zone 150 includes gold
Belong to Ti-Cu CTB alloy, W-Cu tungsten-copper alloy or the conjunction of Cr-Cu chromium-copper that titanium Ti, tungsten w, chromium Cr, molybdenum Mo are formed respectively with Ni metal
In gold or molybdenum copper Mo-Cu alloy any one or two or more combinations；Or the material of described transition zone 150 also includes non-gold
Belong to material silicon dioxide SiO2；C2：The one side of described transition zone 150 is with the connection of described reflection layer 130；In described institute
State the protective layer 160 that vacuum plating a layer thickness on the another side of transition zone 150 is at 400 nanometers to 600 nanometers；Described protective layer
160 material is metallic copper.
It is also covered with silica gel on the substrate A face 112 being used for fix or weld LED chip as shown in Figure 3.Use in figure 3
In fixing or the electronic circuit of welding LED chip and/or the LED core for heat conduction, the described substrate A face 112 covering copper of radiating
The part of printing opacity is additionally provided with piece, the part of these printing opacities includes covering the translucent silica gel on LED chip, if doing white light
LED product, then be also possible in silica gel be mixed with fluorescent material；If doing the LED product of purple light, can be using quartz glass or can be saturating
The lens crossing purple wave band cover LED chip and cover without silica gel.
As shown in FIG. 5 and 6 in embodiment, only it is provided with reflection layer 130, and be not provided with protective layer 160 and transition zone
150.Method for manufacturing the described ceramic printed-circuit board only having reflection layer 130 comprises the following steps, A1：In ceramic base
Substrate B face 114 one layer of reflection layer 130 of side vacuum plating of bottom 110；Described reflection layer 130 is arranged on ceramic bases
On the substrate B face 114 of layer 110；Described reflection layer 130 is the reflecting layer of metal material, and described metal material is aluminum.Described light
The one side in reflecting layer 130 couples with the substrate B face 114 of described ceramic base bottom 110, on the another side of described reflection layer 130
Aluminum is contacted with extraneous air and is passivated into aluminium sesquioxide thus forming one layer of passivation protection layer.Passivation technology can certainly be passed through
It is passivated process in aluminum or other metal surfaces and form passivation protection film layer.When reflecting layer needs and extraneous air directly contact
When it will usually from aluminium material reflecting layer.Certainly the material in reflecting layer and material thickness selection can be according to actual need
Want and integrated cost carries out selecting setting.
Also have in some embodiments not shown in figures, only reflection layer 130 and protective layer 160 can be set, use
Comprise the following steps in the method manufacturing this kind of ceramic printed-circuit board, B1：Substrate B face 114 side in ceramic base bottom 110
Vacuum plating a layer thickness is in 60 nanometers to 100 nanometers of reflection layer 130；Described reflection layer 130 is arranged on ceramic bases
On the substrate B face 114 of layer 110；Described reflection layer 130 be metal material reflecting layer, described metal material be aluminum, gold, silver,
Any one in copper and this five kinds of metals of rhodium or two or more combinations；B2：The one side of described reflection layer 130 is with described pottery
The substrate B face 114 of porcelain basal layer 110 couples；On the another side of described reflection layer 130, vacuum plating a layer thickness is 400
The protective layer 160 of nanometer to 600 nanometers；The material of described protective layer 160 is metallic copper.
In above-mentioned each method, before reflection layer 130 on plating, the substrate A face 112 of described ceramics base PCB plate 100
On can be to have set for fixing or welding the electronic circuit layer 120 of LED chip；Electricity can certainly be not provided with
Sub- line layer 120.Plating reflecting layer can before setting electronic circuit layer 120 can also after it is also possible to simultaneously, that is,
Say, reflecting layer on plating while electronic circuit layer 120 can be set on the substrate A face 112 of described ceramics base PCB plate 100.
Described reflection layer 130 is the reflecting layer of metal material, and described metal material is aluminum, gold, silver, copper and this five kinds of rhodium
Any one in metal or two or more combinations.The thickness of described reflection layer 130 is 10 nanometers to 1000 nanometers.Described
The thickness of reflection layer 130 is 20 nanometers to 500 nanometers.The thickness of described reflection layer 130 is 60 nanometers to 100 nanometers.
The thickness of described reflection layer 130 can be 50 nanometers to 300 microns, and the thickness of described reflection layer 130 also may be used
Being 60 nanometers to 200 nanometers, in addition can also be 10 nanometers, 20 nanometers, 100 nanometers, 500 nanometers, 1000 nanometers, 2 microns,
20 microns, 100 microns, 300 microns or 500 microns.
The thickness of described ceramic base bottom 110 is 1.00 millimeters to 0.10 millimeter.Further described ceramic base bottom 110
Thickness can also be as 0.100 millimeter to 0.635 millimeter, conventional thickness include 1.00 millimeters, 0.500 millimeter 0.635 milli
Rice, 0.380 millimeter, 0.254 millimeter, 0.100 millimeter.Can be selected different thick according to actual radiating, insulation and the demand of printing opacity
The ceramic substrate material layer of degree.
The material of described protective layer 160 is metallic copper.The thickness of described protective layer 160 is more than or equal to 100 nanometers, to be to receive
Such as 200 nanometers of the thickness of meter level, 300 nanometers or 400 nanometers；Described protective layer 160 can also be that micron-sized thickness such as 200 is micro-
Rice, 300 microns or 400 microns.
The material of described transition zone 150 includes metal material titanium Ti, tungsten w, any in these four metals in chromium Cr, molybdenum Mo
One or more combination.Or the material of described transition zone 150 include Titanium Ti, tungsten w, chromium Cr, molybdenum Mo respectively with gold
Belong to any one in Ti-Cu CTB alloy, W-Cu tungsten-copper alloy or Cr-Cu chrome copper or the molybdenum copper Mo-Cu alloy of Cu composition
Plant or two or more combinations.The material of described transition zone 150 also includes non-metallic material silicon dioxide SiO2.Described transition zone
150 thickness is 10 nanometers to 600 nanometers or 400 nanometers, 500 nanometers or 600 nanometers.
It is provided with the LED encapsulation ceramic printed-circuit board 100 in reflecting layer, described ceramic base bottom 110 is mutually overall
Upper parallel relative both side surface is referred to as substrate A face 112 and substrate B face 114；This side of described substrate A face 112 is arranged
Have the electronic circuit for fixing or welding LED chip and/or for heat conduction, radiating cover copper；Described substrate B face 114 this
Side is provided with reflection layer 130, and this reflection layer 130 is used for reflecting that LED illuminator sends and passing through ceramic base bottom
Light.Reflection layer 130 improves the overall reflectance of LED encapsulation ceramic printed-circuit board, and due to this reflection layer 130
One side directly couple with substrate B face 114, will not be with air directly contact it is therefore prevented that the oxidation of reflecting surface or other are physico
Learn change, oxidation, reflecting surface can be allowed to maintain good reflection characteristic for a long time；If the another side of this reflection layer 130 not plating
Other layers, also can be passivated in atmosphere, in the aluminium sesquioxide layer that Surface Creation property is highly stable, itself have and protect well
Effect, back of the body plating homogenous material metallic aluminium has met functional requirement.Reflection layer 130 is from preferred for all band optical wavelength
Highly reflective material, these materials most preferably metallic aluminium Al, the second choice of opimization is silver-colored Ag or copper Cu or golden Au.
This technology is suitable for the ceramic substrate of 1 millimeter and less than 1 millimeter thickness of thickness；Preferably reflecting layer coating film thickness is 60
Nanometer to 200 nanometers, if but in order to composite heat-conducting coefficient or improve board structure intensity needs, penetrating layer coating film thickness can set
Put between 50 nanometers to 300 microns, thickness its composite heat-conducting coefficient thicker and mechanical strength are bigger.If increase composite guide
Hot coefficient or the needs improving board structure intensity, reflecting layer plated film can be more than 1 micron even 300 microns.Described light is anti-
The one side penetrating layer 130 couples with the substrate B face 114 of described ceramic base bottom 110, on the another side of described reflection layer 130 also
Setting matcoveredn 160.One side protective layer 160 can avoid the light decay that the physicochemical change in reflecting layer is brought；The opposing party
Face, when protective layer is high-thermal conductive metal, reaches composite heat-conducting coefficient and the knot that certain thickness can also greatly improve base plate for packaging
Structure intensity；The setting of protective layer simultaneously is typically to when meeting LED chip and being installed on LED encapsulation ceramic printed-circuit board
The needs of Reflow Soldering, protect reflecting layer not to be affected in the technical process of Reflow Soldering.When protective layer material therefor is copper,
Because copper is also oxidizable, generally also need to layers of copper is surface-treated, such as oxidation barrier film, nickel plating Ni gold Au etc., i.e. described guarantor
Also it is coated with the oxidation barrier film for nickel and/or golden Au for the material in sheath 160 and the one side of external contact.
Before plating, in order to increase the adhesion between protective layer and reflecting layer, plus a transition zone can be plated,
It is additionally provided with transition zone 150 between described reflection layer 130 and described protective layer 160.The preferably Ti titanium of this transition zone, w
Tungsten, the metal such as chromium Cr or SiO2 etc. be nonmetallic or the mixing coating of protective layer material and previous materials for example
CTB alloy or tungsten-copper alloy.
Reflecting layer, protective layer and transition zone is plated, preferred plated film mode is PVD, such as magnetic control splashes in above-mentioned technical process
Penetrate.Certainly economically consider, when coating film thickness needs to thicken, it would however also be possible to employ electro-plating method thickeies film layer.Plating
Thicken copper to 300 microns or more.Above-mentioned technical process can also be cleaned before starting in elder generation's pretreatment, keeps treating the clear of surfacing
Clean；Above-mentioned technical process can be carried out after terminating again, dry and anti-oxidation process after packed again.
This utility model in LED package application field, especially high power density LED application have significantly excellent
Gesture, usual thickness is 0.254 millimeter of aluminum oxide ceramic substrate is translucent, has very big as LED package substrate
Light loss, especially after being arranged on radiator by thermal interfacial material, light loss can be bigger, compared to same material for LED encapsulating products
1 millimeters thick ceramic packaging substrate of matter about loses the light more than 60%.According to scheme of the present utility model, 1 millimeters thick ceramic package
After setting reflecting layer on the non-LED chip solder side of substrate, the LED encapsulating products of same packaging technology, light loss can reduce
To 10%.
The LED encapsulation ceramic printed-circuit board high reflectance high thermal conductivity being provided with reflecting layer simultaneously of the present utility model
Ceramic substrate, disregards the copper thickness that front is LED encapsulating face, when ceramic bases thickness is 0.254 millimeter, reflecting layer is copper and has a thickness
For 0.300 millimeter it is, the composite heat-conducting coefficient of its Theoretical Calculation>52W/m.k, is much better than the 1 most millimeters thick of industry
Ceramic printed-circuit board plate, protective layer thicken to 0.3 millimeter of thick copper also considerably increase pottery structural strength simultaneously also big
Improve heat conductivility greatly, be particularly suitable for highly reliable, high power density, the LED of high insulation should be used as base plate for packaging.
The LED encapsulation ceramic printed-circuit board being provided with reflecting layer described in the utility model should be and is provided with reflection
Layer, this reflecting layer is used for reflecting light that LED illuminator sends and through ceramic base bottom；The one side in reflecting layer is with described pottery
The substrate B face connection of porcelain basal layer, the another side in reflecting layer is directly exposed or arranges matcoveredn.Reflecting layer exposed surface itself is sent out
Raw passivation reaction so that reflecting layer is protected or overlying sheath does not prevent oxidation with air directly contact, can remain good for a long time
Reflection characteristic；Protective layer can avoid the light decay that the physicochemical change in reflecting layer is brought, and can be by increasing protective layer gold
Composite heat-conducting coefficient and structural strength to greatly improve base plate for packaging for the thickness belonging to.
In this utility model, in described " connection " one word other documents in the prior art, it is also sometimes used as " connection ",
But the intended scope of " connection " in present specification refers not only to " connection ", part occasion also has the meaning of " joint ".
The foregoing is only embodiment of the present utility model, not thereby limit the scope of the claims of the present utility model, every
The equivalent structure made using utility model description and accompanying drawing content or equivalent flow conversion, or directly or indirectly it is used in it
The technical field of his correlation, is all included in the same manner in scope of patent protection of the present utility model.
Claims (11)
1. a kind of interior ceramic printed-circuit board (100) setting reflection layer, encapsulating for LED, including for being electrically insulated and/or using
In the ceramic base bottom (110) of heat conduction/radiating, by this ceramic base bottom (110) mutually parallel on the whole relative both sides table
Face is referred to as substrate A face (112) and substrate B face (114)；It is characterized in that, described substrate A face (112) is provided with for
The region of fixing or welding LED chip and electronic circuit electrically connect with chip and/or for heat conduction, radiate cover copper；Institute
State and the reflection layer (130) that metal material cloth covers is provided with substrate B face (114), reflection layer (130) is used for substrate
The upper each LED in A face (112) projects toward non-light direction and passes through described ceramic base bottom（110）The light of leakage, anti-toward light direction
It is emitted back towards, thus improving total luminous efficiency.
2. the ceramic printed-circuit board for LED encapsulation according to claim 1（100）It is characterised in that
The one side of described reflection layer (130) is closely overlying on the substrate B face (114) of described ceramic base bottom (110), and this light is anti-
Penetrating and being then provided with material on the another side of layer (130) is copper Cu or nickel or silicon dioxide SiO2Protective layer (160).
3. the ceramic printed-circuit board for LED encapsulation according to claim 2 it is characterised in that
The thickness of described protective layer (160) is more than or equal to 100 nanometers.
4. the ceramic printed-circuit board for LED encapsulation according to claim 3 it is characterised in that
When described protective layer (160) is copper Cu, must plating oxidation barrier film in its one side with external contact.
5. the ceramic printed-circuit board for LED encapsulation according to claim 3 it is characterised in that
When described protective layer (160) is copper Cu, the one side with external contact for this protective layer (160) is OPS, that is, covers last layer
Organic guarantor welds film.
6. the ceramic printed-circuit board for LED encapsulation according to claim 1 it is characterised in that
The thickness of described reflection layer (130) is 50 nanometers to 0.300 millimeter.
7. the ceramic printed-circuit board for LED encapsulation according to claim 6 it is characterised in that
The thickness of described reflection layer (130) is 100 nanometers to 500 nanometers.
8. the ceramic printed-circuit board for LED encapsulation according to claim 1 it is characterised in that
The thickness of described ceramic base bottom (110) is 0.100 millimeter to 1.000 millimeters.
9. the ceramic printed-circuit board for LED encapsulation according to claim 8 it is characterised in that
The thickness of described ceramic base bottom (110) is 0.100 millimeter to 0.635 millimeter.
10. the ceramic printed-circuit board for LED encapsulation according to claim 2 it is characterised in that
It is additionally provided with transition zone (150) between described reflection layer (130) and described protective layer (160).
11. ceramic printed-circuit boards for LED encapsulation according to claim 10 it is characterised in that
The thickness of described transition zone (150) is 10 nanometers to 600 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620814119.7U CN205985068U (en) | 2016-07-31 | 2016-07-31 | Interior ceramic printed circuit board of establishing reflection layer, being used for LED encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620814119.7U CN205985068U (en) | 2016-07-31 | 2016-07-31 | Interior ceramic printed circuit board of establishing reflection layer, being used for LED encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205985068U true CN205985068U (en) | 2017-02-22 |
Family
ID=58027337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620814119.7U Active CN205985068U (en) | 2016-07-31 | 2016-07-31 | Interior ceramic printed circuit board of establishing reflection layer, being used for LED encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205985068U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549091A (en) * | 2016-07-31 | 2017-03-29 | 深圳市微纳科学技术有限公司 | Reflection layer, the ceramic printed-circuit board encapsulated for LED and method are set inside |
-
2016
- 2016-07-31 CN CN201620814119.7U patent/CN205985068U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549091A (en) * | 2016-07-31 | 2017-03-29 | 深圳市微纳科学技术有限公司 | Reflection layer, the ceramic printed-circuit board encapsulated for LED and method are set inside |
| WO2018024070A1 (en) * | 2016-07-31 | 2018-02-08 | 深圳市微纳科学技术有限公司 | Ceramic printed circuit board provided with light reflection layer therein and used for led packaging, and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106549091A (en) | Reflection layer, the ceramic printed-circuit board encapsulated for LED and method are set inside | |
| US20080043444A1 (en) | Wiring Board for Light-Emitting Element | |
| CN101176216B (en) | Porcelain enameled substrate for mounting light-emitting device, light-emitting device module, lighting system, display device, and traffic signal device | |
| US20020070449A1 (en) | Light-emitting device and production thereof | |
| TW200522395A (en) | Power surface mount light emitting die package | |
| EP2416389A1 (en) | Light-emitting device and illumination device | |
| TW200926445A (en) | Fabricating method of photoelectric device and packaging structure thereof | |
| WO2011147124A1 (en) | Led street lamp and high power led device | |
| CN101614333A (en) | High-efficiency radiating LED illumination light source and manufacture method | |
| CN108922869A (en) | A kind of SMD encapsulation base of band TEC- aluminium nitride-metal ternary structural | |
| CN101369615B (en) | Packaging method for low-thermal resistance high-power light-emitting diode | |
| CN205985068U (en) | Interior ceramic printed circuit board of establishing reflection layer, being used for LED encapsulation | |
| WO2018006819A1 (en) | Multi-layer ceramic printed circuit board and manufacturing method therefor | |
| JP2009141219A (en) | Light emitting device | |
| CN100461474C (en) | Crystal-coated light-emitting diodes packing structure and method | |
| CN101509651A (en) | LED highly effective heat radiation light source substrate for illumination and manufacturing method | |
| TW201126765A (en) | Package structure of compound semiconductor and manufacturing method thereof | |
| CN102005510B (en) | Manufacture method of light emitting diode (LED) assembly | |
| CN102969438A (en) | Sapphire bracket for LED (Light-Emitting Diode) | |
| CN203192836U (en) | Packaging support of integrated LED light source | |
| CN104718620B (en) | Light-emitting device | |
| WO2011004928A1 (en) | Light emitting device | |
| CN201412705Y (en) | High-efficiency heat radiating LED lighting light source | |
| CN103107264A (en) | Integrated light-emitting diode (LED) light source capsulation support frame | |
| TW508848B (en) | Light-emitting device and production thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200824 Address after: Room 303, 3rd floor, No.7 Guhe street, Sanjiao Town, Zhongshan City, Guangdong Province Patentee after: Zhongshan Basic Technology Co., Ltd Address before: 518112, Guangdong, Shenzhen, Guangming New District, Gongming street, Laos Road, science and Technology Park, Haida, No. 5, building, building, floor 1 Patentee before: SHENZHEN VACNANO SCIENCE AND TECHNOLOGY Co.,Ltd. |