CN205920423U - A temperature -control circuit for minitype greenhouse - Google Patents

A temperature -control circuit for minitype greenhouse Download PDF

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Publication number
CN205920423U
CN205920423U CN201620839273.XU CN201620839273U CN205920423U CN 205920423 U CN205920423 U CN 205920423U CN 201620839273 U CN201620839273 U CN 201620839273U CN 205920423 U CN205920423 U CN 205920423U
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China
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field effect
effect transistor
audion
temperature
resistance
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Expired - Fee Related
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CN201620839273.XU
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Chinese (zh)
Inventor
王野
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Lishui University
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Lishui University
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Abstract

The utility model discloses a temperature -control circuit for minitype greenhouse, it uses with the microcontroller cooperation, temperature -control circuit is including refrigeration heating unit, refrigeration heating unit includes at least one H bridge circuit, H bridge circuit includes semiconductor refrigeration piece, first to fourth triode, first to fourth field effect transistor, and is first to the 8th resistance. Compared with the prior art, the utility model discloses can utilize the semiconductor refrigeration piece refrigerates or heats, adjusts the temperature in the minitype greenhouse in real time to utilize heat dissipation unit to carry out heat exchange fast, improve the efficiency that heats.

Description

Temperature-control circuit for mini greenhouse
Technical field
This utility model is related to a kind of temperature-control circuit for mini greenhouse.
Background technology
Use plant it will usually arranging some mini greenhouses indoors and viewing and admiring for plantation in Modern Family's life.But The monitoring of traditional mini greenhouse environment all adopts manual type, and this traditional data acquisition method takes time and effort, and accuracy is not high, And easily it is subject to other factors to disturb it is very difficult to get a desired effect.Particularly during cultivating plant, each in environment The factor of kind can affect to the growth of plant, and wherein temperature factor is even more important to plant production.If temperature Day-night change ratio is larger, it will the growth to plant adversely affects.It is therefore desirable to design a kind of temperature-control circuit coming Solve the above problems.
Utility model content
The purpose of this utility model is to provide a kind of temperature control electricity of temperature that can automatically adjust in mini greenhouse Road.
To achieve these goals, the technical scheme that this utility model is adopted is as follows:
A kind of temperature-control circuit for mini greenhouse, it is used cooperatively with microcontroller, described temperature-control circuit Including cooling and warming unit, described cooling and warming unit includes at least one h bridge circuit, and described h bridge circuit includes partly leading Body cooling piece, first to fourth audion, first to fourth field effect transistor, the first to the 8th resistance, wherein:
Described first resistor is connected between the first control end of microcontroller and the base stage of the first audion,
Described second resistance is connected between the first control end of microcontroller and the base stage of the second audion,
Described 3rd resistor is connected between colelctor electrode and the power supply of the first audion,
Described 4th resistance is connected between colelctor electrode and the power supply of the second audion,
Described 5th resistance is connected between the second control end of microcontroller and the base stage of the 3rd audion,
Described 6th resistance is connected between the second control end of microcontroller and the base stage of the 4th audion,
Described 7th resistance is connected between colelctor electrode and the power supply of the 3rd audion,
Described 8th resistance is connected between colelctor electrode and the power supply of the 4th audion,
The emitter stage of described first to fourth audion is all grounded,
The source electrode of described first field effect transistor is connected with power supply, the current collection of the grid of the first field effect transistor and the first audion Pole connects, and the drain electrode of the first field effect transistor is connected with the negative pole of semiconductor chilling plate,
The source electrode of described second field effect transistor is connected with power supply, the current collection of the grid of the second field effect transistor and the 3rd audion Pole connects, and the drain electrode of the second field effect transistor is connected with the positive pole of semiconductor chilling plate,
The source electrode of described 3rd field effect transistor is connected with the drain electrode of the first field effect transistor, the grid of the 3rd field effect transistor and The colelctor electrode of two audions connects, the grounded drain of the 3rd field effect transistor,
The source electrode of described 4th field effect transistor is connected with the drain electrode of the second field effect transistor, the grid of the 4th field effect transistor and The colelctor electrode of four audions connects, the grounded drain of the 4th field effect transistor.
Preferably, described temperature-control circuit also include for quickly carry out heat exchange heat-sink unit, in real time The display unit of temperature and for reminding temperature to exceed the alarm unit of normal range in display mini greenhouse.
Preferably, described first to fourth audion is npn audion, described first field effect transistor and second effect P-channel enhancement mode field effect transistor should be by pipe, described 3rd field effect transistor and the 4th field effect transistor are n-channel enhancement mode field effect Ying Guan.
Compared with prior art, this utility model is used for having the beneficial effects that of the temperature-control circuit of mini greenhouse: this Utility model using described semiconductor chilling plate refrigeration or can heat, the temperature in real-time regulation mini greenhouse, and using scattered Hot cell quickly carries out heat exchange, improves the efficiency of cooling and warming.
Brief description
Fig. 1 is the circuit structure schematic diagram of cooling and warming unit one embodiment described in the utility model.
The each labelling of in figure is as follows: q1, the first audion;Q2, the second audion;Q3, the 3rd audion;Q4, the four or three pole Pipe;Q5, the first field effect transistor;Q6, the second field effect transistor;Q7, the 3rd field effect transistor;Q8, the 4th field effect transistor;R1, the first electricity Resistance;R2, second resistance;R3,3rd resistor;R4, the 4th resistance;R5, the 5th resistance;R6, the 6th resistance;R7, the 7th resistance; R8, the 8th resistance;U, semiconductor chilling plate;A, the first control end of microcontroller;B, the second control end of microcontroller.
Specific embodiment
With reference to specific embodiment, this utility model is further described below.
Refer to shown in Fig. 1, this utility model provides a kind of temperature-control circuit for mini greenhouse, itself and microcontroller Device uses cooperatively, and described temperature-control circuit includes cooling and warming unit, and described cooling and warming unit includes at least one h bridge-type Circuit, described h bridge circuit includes semiconductor chilling plate u, first to fourth audion, first to fourth field effect transistor, and first To the 8th resistance, wherein, described first to fourth audion is npn audion, described first field effect transistor q5 and second Field effect transistor q6 is p-channel enhancement mode field effect transistor, and described 3rd field effect transistor q7 and the 4th field effect transistor q8 are n-channel Enhancement mode field effect transistor.
In described h bridge circuit, the connected mode of each element is:
Described first resistor r1 is connected between the first control end a of microcontroller and the base stage of the first audion q1,
Described second resistance r2 is connected between the first control end a of microcontroller and the base stage of the second audion q2,
Described 3rd resistor r3 is connected between colelctor electrode and the power supply of the first audion q1,
Described 4th resistance r4 is connected between colelctor electrode and the power supply of the second audion q2,
Described 5th resistance r5 is connected between the second control end b of microcontroller and the base stage of the 3rd audion q3,
Described 6th resistance r6 is connected between the second control end b of microcontroller and the base stage of the 4th audion q4,
Described 7th resistance r7 is connected between colelctor electrode and the power supply of the 3rd audion q3,
Described 8th resistance r8 is connected between colelctor electrode and the power supply of the 4th audion q4,
The emitter stage of described first to fourth audion q4 is all grounded,
The source electrode of described first field effect transistor q5 is connected with power supply, the grid of the first field effect transistor q5 and the first audion q1 Colelctor electrode connect, the drain electrode of the first field effect transistor q5 is connected with the negative pole of semiconductor chilling plate u,
The source electrode of described second field effect transistor q6 is connected with power supply, the grid of the second field effect transistor q6 and the 3rd audion q3 Colelctor electrode connect, the drain electrode of the second field effect transistor q6 is connected with the positive pole of semiconductor chilling plate u,
The source electrode of described 3rd field effect transistor q7 is connected with the drain electrode of the first field effect transistor q5, the grid of the 3rd field effect transistor q7 Pole is connected with the colelctor electrode of the second audion q2, the grounded drain of the 3rd field effect transistor q7,
The source electrode of described 4th field effect transistor q8 is connected with the drain electrode of the second field effect transistor q6, the grid of the 4th field effect transistor q8 Pole is connected with the colelctor electrode of the 4th audion q4, the grounded drain of the 4th field effect transistor q8.
In this utility model, described temperature-control circuit also include for quickly carry out heat exchange heat-sink unit, For the display unit of temperature and the alarm unit for reminding temperature to exceed normal range in real-time display mini greenhouse, described Heat-sink unit includes fan.
In the present embodiment, external power source is powered to described temperature-control circuit, and the output voltage of described power supply is 12v.
During use, the first control end a of described microcontroller and the second control end b output control instruct, and make quasiconductor system Cold u energising, and by changing the sense of current of semiconductor chilling plate u, to control semiconductor chilling plate u refrigeration or to heat. Described heat-sink unit can start fan work, accelerates air flow, thus realizing fast cooling or intensification.Using this temperature Control mode, it is not necessary to any cold-producing medium, can continuously work, and does not have polluter, installs easily, long service life.
Below schematically this utility model and embodiments thereof are described, this description does not have restricted, accompanying drawing Shown in be also one of embodiment of the present utility model, actual structure is not limited thereto.So, if this area Those of ordinary skill enlightened by it, without departing from this utility model create objective in the case of, design without creative The frame mode similar to this technical scheme and embodiment, all should belong to protection domain of the present utility model.

Claims (3)

1. a kind of temperature-control circuit for mini greenhouse, it uses cooperatively with microcontroller it is characterised in that described temperature Control circuit includes cooling and warming unit, and described cooling and warming unit includes at least one h bridge circuit, described h bridge circuit Including semiconductor chilling plate, first to fourth audion, first to fourth field effect transistor, the first to the 8th resistance, wherein:
Described first resistor is connected between the first control end of microcontroller and the base stage of the first audion,
Described second resistance is connected between the first control end of microcontroller and the base stage of the second audion,
Described 3rd resistor is connected between colelctor electrode and the power supply of the first audion,
Described 4th resistance is connected between colelctor electrode and the power supply of the second audion,
Described 5th resistance is connected between the second control end of microcontroller and the base stage of the 3rd audion,
Described 6th resistance is connected between the second control end of microcontroller and the base stage of the 4th audion,
Described 7th resistance is connected between colelctor electrode and the power supply of the 3rd audion,
Described 8th resistance is connected between colelctor electrode and the power supply of the 4th audion,
The emitter stage of described first to fourth audion is all grounded,
The source electrode of described first field effect transistor is connected with power supply, and the colelctor electrode of the grid of the first field effect transistor and the first audion is even Connect, the drain electrode of the first field effect transistor is connected with the negative pole of semiconductor chilling plate,
The source electrode of described second field effect transistor is connected with power supply, and the colelctor electrode of the grid of the second field effect transistor and the 3rd audion is even Connect, the drain electrode of the second field effect transistor is connected with the positive pole of semiconductor chilling plate,
The source electrode of described 3rd field effect transistor is connected with the drain electrode of the first field effect transistor, the grid and the two or three of the 3rd field effect transistor The colelctor electrode of pole pipe connects, the grounded drain of the 3rd field effect transistor,
The source electrode of described 4th field effect transistor is connected with the drain electrode of the second field effect transistor, the grid and the four or three of the 4th field effect transistor The colelctor electrode of pole pipe connects, the grounded drain of the 4th field effect transistor.
2. it is used for as claimed in claim 1 the temperature-control circuit of mini greenhouse it is characterised in that described temperature-control circuit Also include heat-sink unit, the display unit for temperature in real-time display mini greenhouse and the use for quickly carrying out heat exchange In the alarm unit reminding temperature to exceed normal range.
3. it is used for as claimed in claim 1 the temperature-control circuit of mini greenhouse it is characterised in that described first to fourth 3 Pole pipe is npn audion, and described first field effect transistor and the second field effect transistor are p-channel enhancement mode field effect transistor, institute State the 3rd field effect transistor and the 4th field effect transistor is n-channel enhancement mode field effect transistor.
CN201620839273.XU 2016-08-04 2016-08-04 A temperature -control circuit for minitype greenhouse Expired - Fee Related CN205920423U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620839273.XU CN205920423U (en) 2016-08-04 2016-08-04 A temperature -control circuit for minitype greenhouse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620839273.XU CN205920423U (en) 2016-08-04 2016-08-04 A temperature -control circuit for minitype greenhouse

Publications (1)

Publication Number Publication Date
CN205920423U true CN205920423U (en) 2017-02-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112694357A (en) * 2021-01-26 2021-04-23 中国科学院合肥物质科学研究院 High-efficient compost fermenting installation based on ultraviolet degradation antibiotic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112694357A (en) * 2021-01-26 2021-04-23 中国科学院合肥物质科学研究院 High-efficient compost fermenting installation based on ultraviolet degradation antibiotic

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CF01 Termination of patent right due to non-payment of annual fee
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Granted publication date: 20170201

Termination date: 20170804