CN205880140U - Diode test control circuit and test system - Google Patents
Diode test control circuit and test system Download PDFInfo
- Publication number
- CN205880140U CN205880140U CN201620702684.4U CN201620702684U CN205880140U CN 205880140 U CN205880140 U CN 205880140U CN 201620702684 U CN201620702684 U CN 201620702684U CN 205880140 U CN205880140 U CN 205880140U
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- circuit
- test
- control circuit
- diode
- temperature
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Abstract
The utility model provides a diode test control circuit, includes: DC power supply for provide the direct current, direct current direction switching circuit, with DC power supply connects, is used for switching DC power supply's output and input direction, master control circuit, with direct current direction switching circuit connection, master control circuit be used for with the humid test case is connected, with right the work of humid test case is controlled, and drive circuit, with direct current direction switching circuit connection, drive circuit be used for with the diode that awaits measuring of humid test incasement is connected, in order to incite somebody to action DC conversion drives for behind the drive power supply the diode awaits measuring to carry out power and smelt test or the test of high temperature reverse biased always. Above -mentioned diode test control circuit's the low and efficiency of software testing height of test cost. The utility model discloses still relate to a diode test system.
Description
Technical field
This utility model relates to Test Diode technical field, particularly relates to a kind of Test Diode control circuit and survey
Test system.
Background technology
When diode is tested, it usually needs it is carried out power ageing test and high temperature reverse bias test.Tradition
Test system need the equipment using two platform independent carry out respectively power ageing test and high temperature reverse bias test so that survey
Try relatively costly and testing efficiency is relatively low.
Utility model content
Based on this, it is necessary to provide a kind of testing cost is low and testing efficiency is high Test Diode control circuit and test
System.
A kind of Test Diode control circuit, including: DC source, it is used for providing unidirectional current；Unidirectional current direction switching electricity
Road, is connected with described DC source, for switching output and the input direction of described DC source；Governor circuit, with described directly
Stream electricity direction switching circuit connects；Described governor circuit is for being connected with described temperature test chamber, with to described temperature test chamber
Work be controlled；And drive circuit, it is connected with described unidirectional current direction switching circuit；Described drive circuit is used for and institute
State the diode to be measured in temperature test chamber to connect, to be converted to described unidirectional current drive two poles to be measured described in power supply rear drive
Pipe, thus carry out power ageing test or high temperature reverse bias test.
Wherein in an embodiment, described unidirectional current direction switching circuit is bridge type relay group.
Wherein in an embodiment, described governor circuit includes single-chip microcomputer, analog to digital conversion circuit and current sampling circuit；
Described current sampling circuit, analog-digital conversion circuit as described and described single-chip microcomputer are sequentially connected with；Described current sampling circuit is used for
Leakage current in circuit is sampled and exports analog sampling value；Described analog sampling value is changed through analog-digital conversion circuit as described
For exporting after digital sample values to described single-chip microcomputer；Described single-chip microcomputer is for by described digital sample values and leakage current threshold ratio
Relatively, whether lost efficacy with the diode in exact p-value.
Wherein in an embodiment, described single-chip microcomputer is STM32 single-chip microcomputer or 51 single-chip microcomputers；Described DC source is
Programmable DC power supply.
Wherein in an embodiment, described governor circuit also includes incubator real-time monitoring circuit, is used for gathering described temperature
Each point temperature data exporting to described single-chip microcomputer in degree proof box；Described single-chip microcomputer is used for according to described temperature data described
Temperature in temperature test chamber is controlled.
Wherein in an embodiment, also including: thermal-shutdown circuit, described thermal-shutdown circuit is for described two poles
Pipe test control circuit carries out overheat protector；And overcurrent protection electric current, for described Test Diode control circuit is carried out
Overcurrent protection.
Wherein in an embodiment, also include master control borad and keyset；Described unidirectional current direction switching circuit, described list
Sheet machine, described incubator real-time monitoring circuit, analog-digital conversion circuit as described and described thermal-shutdown circuit are arranged on described master control
On plate；Described current sampling circuit, described current foldback circuit and described drive circuit are arranged on described keyset；Described
Keyset, described master control borad and the separate setting of described DC source.
Wherein in an embodiment, also include optical coupling isolation circuit；Described optical coupling isolation circuit is arranged on described master control
Between circuit and described drive circuit, it is used for isolating described governor circuit and described drive circuit.
Wherein in an embodiment, also include host computer；Described host computer is connected with described governor circuit, for surveying
Examination configuration parameter is sent to described governor circuit, and receives and store the data of described governor circuit output.
A kind of diode test system, including temperature test chamber, also includes the diode as described in aforementioned any embodiment
Test control circuit.
Above-mentioned Test Diode control circuit and test system, by arranging unidirectional current direction at the outfan of DC source
Switching circuit, it is possible to achieve the switching in power supply direction, and then make when DC source forward exports, governor circuit and driving electricity
Road carries out power ageing test under the control of this forward power supply, when DC source reversely exports, and governor circuit and driving electricity
Road carries out high temperature reverse bias test under the control of this reverse electrical source.Above-mentioned Test Diode control circuit and test system are permissible
The power ageing of diode is tested and high temperature reverse bias test by same circuit, thus simplifies test circuit structure, fall
Low testing cost.And in test process, it is not necessary to carry out independent wiring respectively, thus greatly improve testing efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of the diode test system in an embodiment；
Fig. 2 is the circuit theory diagrams of the unidirectional current direction switching circuit in Fig. 1.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to this utility model.Should be appreciated that specific embodiment described herein is only in order to explain
This utility model, is not used to limit this utility model.
Fig. 1 is the structural representation of the diode test system in an embodiment.This diode test system is for two
Pole pipe carries out the test of power ageing and high temperature reverse bias is tested.Diode in the present embodiment can include Zener, rectifier tube, snow
Collapse diode, Voltage Cortrol and voltage reference tube and TVS pipe etc..This diode test system includes that Test Diode controls electricity
Road (hereinafter referred to as test control circuit) 100 and temperature test chamber 200.Test control circuit 100 is for temperature test chamber 200
Work be controlled, as to the switch of temperature test chamber, open duration and temperature etc. be controlled.Temperature test chamber 200
For providing test environment so that diode to be measured to carry out power ageing test or high temperature reverse bias test.
Test control circuit 100 includes DC source 110, unidirectional current direction switching circuit 120, governor circuit and driving
Circuit 140.
DC source 110 is for providing unidirectional current to test control circuit 100.In the present embodiment, DC source 110 is
Programmable DC power supply, drives electric current and voltage such that it is able to provide as needed for diode to be measured.
Unidirectional current direction switching circuit 120 is connected with the outfan of DC source 110, for switching DC source 110
Input and outbound course.Unidirectional current direction switching circuit 120 is bridge type relay group, and concrete structure is as shown in Figure 2.Such as Fig. 2, when
When relay 1 and 4 conducting and relay 2 and 3 disconnect, the first power supply exports extremely positive pole, and second source exports extremely negative pole；When
When relay 1 and 4 disconnects and relay 2 and 3 turns on, the first power supply exports extremely negative pole, and second source exports extremely positive pole, from
And realize the switching in power supply direction, to drive test control circuit to carry out power ageing test or high temperature reverse bias test.
Governor circuit is connected with unidirectional current direction switching circuit 120 and is connected with temperature test chamber 200.Governor circuit is used for
Work to temperature test chamber 200 is controlled, such as to the unlatching duration of temperature test chamber 200, open temperature etc. and control
System.Governor circuit includes single-chip microcomputer 132, current sampling circuit 134, analog to digital conversion circuit 136 and incubator real-time monitoring circuit
138.Single-chip microcomputer 132 is main control unit, is controlled with the work to whole test control circuit 100.In the present embodiment, survey
Examination control circuit 100 also includes host computer 150.Host computer 150 is connected with single-chip microcomputer 132, test configurations parameter etc. to be sent
To single-chip microcomputer 132.Single-chip microcomputer 132 generates corresponding control signal with the work to temperature test chamber 200 according to test configurations parameter
It is controlled.In the present embodiment, single-chip microcomputer 132 uses STM32 single-chip microcomputer or 51 single-chip microcomputers.Relative to traditional employing
For FPGA or CPLD chip, it has the advantages such as cheap, convenient upgrading, highly versatile.
Current sampling circuit 134 is for sampling to the leakage current in circuit and exporting analog sampling value.Current sample
Circuit 133 uses precision resistance to realize current sample.Analog to digital conversion circuit 136 is for being converted to numeral by this analog sampling value
Export after sampled value to single-chip microcomputer 132.This digital sample values is compared by single-chip microcomputer 132 with leakage current threshold, with in exact p-value
Diode whether lost efficacy.When digital sample values namely the leakage current that samples are more than leakage current threshold, can confirm that this two
Pole pipe had lost efficacy.
Incubator real-time monitoring circuit 138 each point temperature data exporting to single-chip microcomputer in collecting temperature proof box 200
132.Incubator real-time monitoring circuit 138 includes thermocouple, by the temperature of each point in thermocouple direct collecting temperature proof box 200
Data.The temperature data that single-chip microcomputer 132 obtains according to incubator real-time monitoring circuit 138 test carries out temperature to temperature test chamber 200
Degree controls, and prevents the temperature control in temperature test chamber 200.
Drive circuit 140 is connected with unidirectional current direction switching circuit 120, and is connected with diode to be measured.Drive circuit 140
For the unidirectional current that unidirectional current direction switching circuit 120 exports being converted to driving power supply rear drive diode to be measured, thus enter
The test of row power ageing or high temperature reverse bias test.In the present embodiment, drive circuit 140 is relay control circuit.
Above-mentioned Test Diode control circuit 100, switches by arranging unidirectional current direction at the outfan of DC source 110
Circuit 120, it is possible to achieve the switching in power supply direction, and then make when DC source 110 forward exports, governor circuit and driving
Circuit 140 carries out power ageing test under the control of this forward power supply, when DC source 110 reversely exports, and governor circuit
Under the control of this reverse electrical source, high temperature reverse bias test is carried out with drive circuit 140.Above-mentioned diode test system can be same
One circuit realizes the test of the power ageing to diode and high temperature reverse bias test, thus simplifies test circuit structure, fall
Low testing cost.And in test process, it is not necessary to carry out independent wiring respectively, thus greatly improve testing efficiency.
In the present embodiment, above-mentioned test control circuit 100 also includes thermal-shutdown circuit 160, overcurrent protection electric current 170
And optical coupling isolation circuit 180.Thermal-shutdown circuit 160 is for carrying out overheat protector to test control circuit 100.Overheat protector
Circuit 160 includes thermocouple, is monitored the temperature of governor circuit and drive circuit 140 by thermocouple, thus realized
Temperature protection.Current foldback circuit 170 is for carrying out overcurrent protection to test control circuit 100.Current foldback circuit 170 can lead to
Cross protective tube and critesistor realizes.Optical coupling isolation circuit 180 is arranged between governor circuit and drive circuit 140, is used for
Isolation governor circuit and drive circuit 140.
In the present embodiment, master control borad 10 and keyset 20 it are provided with in diode test system.Wherein, unidirectional current direction
Switching circuit 120, single-chip microcomputer 132, analog to digital conversion circuit 136, incubator real-time monitoring circuit 138 and thermal-shutdown circuit 160
It is arranged on master control borad 10.Current sampling circuit 134, drive circuit 140, current foldback circuit 170 and light-coupled isolation electricity
Road 180 is arranged on keyset 20.In the present embodiment, the DC source 110 in test system, master control borad 10, keyset
20 and temperature test chamber 200 be independently arranged mutually, and can independently extend, consequently facilitating individually carry out dismounting and safeguarding liter
Level.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic executed in example is all described, but, as long as the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed several embodiments of the present utility model, and it describes more concrete and detailed,
But therefore can not be interpreted as the restriction to utility model patent scope.It should be pointed out that, for the common skill of this area
For art personnel, without departing from the concept of the premise utility, it is also possible to make some deformation and improvement, these broadly fall into
Protection domain of the present utility model.Therefore, the protection domain of this utility model patent should be as the criterion with claims.
Claims (10)
1. a Test Diode control circuit, it is characterised in that including:
DC source, is used for providing unidirectional current；
Unidirectional current direction switching circuit, is connected with described DC source, for switching output and the input side of described DC source
To；
Governor circuit, is connected with described unidirectional current direction switching circuit；Described governor circuit is used for being connected with temperature test chamber, with
Work to described temperature test chamber is controlled；And
Drive circuit, is connected with described unidirectional current direction switching circuit；Described drive circuit for in described temperature test chamber
Diode to be measured connect, to be converted to described unidirectional current drive diode to be measured described in power supply rear drive, thus carry out merit
The test of rate ageing or high temperature reverse bias test.
Test Diode control circuit the most according to claim 1, it is characterised in that described unidirectional current direction switching circuit
For bridge type relay group.
Test Diode control circuit the most according to claim 1, it is characterised in that described governor circuit includes monolithic
Machine, analog to digital conversion circuit and current sampling circuit；Described current sampling circuit, analog-digital conversion circuit as described and described single-chip microcomputer
It is sequentially connected with；Described current sampling circuit is for sampling to the leakage current in circuit and exporting analog sampling value；Described mould
Intend sampled value to export after analog-digital conversion circuit as described is converted to digital sample values to described single-chip microcomputer；Described single-chip microcomputer is used for will
Whether described digital sample values compares with leakage current threshold, lost efficacy with the diode in exact p-value.
Test Diode control circuit the most according to claim 3, it is characterised in that described single-chip microcomputer is STM32 monolithic
Machine or 51 single-chip microcomputers；Described DC source is programmable DC power supply.
Test Diode control circuit the most according to claim 3, it is characterised in that described governor circuit also includes incubator
Real-time monitoring circuit, is used for gathering in described temperature test chamber each point temperature data and exports to described single-chip microcomputer；Described monolithic
Machine is for being controlled the temperature in described temperature test chamber according to described temperature data.
Test Diode control circuit the most according to claim 5, it is characterised in that also include:
Thermal-shutdown circuit, described thermal-shutdown circuit is for carrying out overheat protector to described Test Diode control circuit；With
And
Overcurrent protection electric current, for carrying out overcurrent protection to described Test Diode control circuit.
Test Diode control circuit the most according to claim 6, it is characterised in that also include master control borad and keyset；
Described unidirectional current direction switching circuit, described single-chip microcomputer, described incubator real-time monitoring circuit, analog-digital conversion circuit as described and institute
State thermal-shutdown circuit to be arranged on described master control borad；Described current sampling circuit, described current foldback circuit and described in drive
Galvanic electricity road is arranged on described keyset；Described keyset, described master control borad and the separate setting of described DC source.
Test Diode control circuit the most according to claim 1, it is characterised in that also include optical coupling isolation circuit；Institute
State optical coupling isolation circuit to be arranged between described governor circuit and described drive circuit, be used for isolating described governor circuit and described
Drive circuit.
Test Diode control circuit the most according to claim 1, it is characterised in that also include host computer；Described upper
Machine is connected with described governor circuit, for test configurations parameter is sent to described governor circuit, and receives and stores described master
The data of control circuit output.
10. a diode test system, including temperature test chamber, it is characterised in that also include as arbitrary in claim 1～9
Described Test Diode control circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620702684.4U CN205880140U (en) | 2016-07-05 | 2016-07-05 | Diode test control circuit and test system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620702684.4U CN205880140U (en) | 2016-07-05 | 2016-07-05 | Diode test control circuit and test system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205880140U true CN205880140U (en) | 2017-01-11 |
Family
ID=57695498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620702684.4U Expired - Fee Related CN205880140U (en) | 2016-07-05 | 2016-07-05 | Diode test control circuit and test system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205880140U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106771954A (en) * | 2017-03-09 | 2017-05-31 | 广州市昆德科技有限公司 | The capacitor voltage characteristic tester and its method of testing of automatic measurement are carried out to PN junction |
| CN108320691A (en) * | 2018-03-27 | 2018-07-24 | 苏州佳智彩光电科技有限公司 | A kind of over-current over-voltage protection method and system when the test for OLED screen |
| CN114509656A (en) * | 2022-04-06 | 2022-05-17 | 杭州飞仕得科技有限公司 | Intelligent detection system for IGBT driving single board |
-
2016
- 2016-07-05 CN CN201620702684.4U patent/CN205880140U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106771954A (en) * | 2017-03-09 | 2017-05-31 | 广州市昆德科技有限公司 | The capacitor voltage characteristic tester and its method of testing of automatic measurement are carried out to PN junction |
| CN108320691A (en) * | 2018-03-27 | 2018-07-24 | 苏州佳智彩光电科技有限公司 | A kind of over-current over-voltage protection method and system when the test for OLED screen |
| CN114509656A (en) * | 2022-04-06 | 2022-05-17 | 杭州飞仕得科技有限公司 | Intelligent detection system for IGBT driving single board |
| CN114509656B (en) * | 2022-04-06 | 2022-10-14 | 杭州飞仕得科技有限公司 | Intelligent detection system for IGBT driving single board |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170111 Termination date: 20180705 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |