CN205828416U - The device that resistant to elevated temperatures light emitting diode evaporation film figure is formed - Google Patents

Abstract

This utility model provides a kind of resistant to elevated temperatures light emitting diode device that evaporation film figure is formed, including a carrier, a fire resistant magnetic absorbent module, a chip and a nonmagnetic metal mask.Carrier has the first accommodation space and the second accommodation space.Fire resistant magnetic absorbent module is arranged in the first accommodation space.Chip is arranged in the second accommodation space of carrier.Nonmagnetic metal mask covers the second accommodation space of carrier, and wherein the temperature of high temperature is more than 80 DEG C.

Description

The device that resistant to elevated temperatures light emitting diode evaporation film figure is formed

Technical field

This utility model aim to provide a kind of be greatly reduced manufacturing cost and make product facilitate that mass production manufactures is high temperature resistant Light emitting diode evaporation film figure formed device, be especially suitable for application in the manufacture of light-emitting diodes pipe electrode or similar structures.

Background technology

Light emitting diode, owing to power consumption is few, volume is little, is widely used today for the display lamp of electrical home appliances, mobile electricity Back light, traffic signal, advertising billboard and automobile the 3rd brake light of words etc..The preparation method of generally a light emitting diode, First, after producing III-V compound chip, on III-V compound chip, make metal electrode, then cut To form LED crystal particle, finally it is packaged operation, the making of light emitting diode can be completed.

The manufacture method of existing light emitting diode metal electrode, is broadly divided into two kinds, first method be prior to III-V compound chip plated surface last layer metal film, continues and utilizes photolithography techniques to form a patterning photoresist layer, and With this patterning photoresist layer as mask, etch this metal film, to complete the making of metal electrode；Another kind of method be then in III- It is coated with one layer of photoresistance on V compound chip and after carrying out photolithography, plates layer of metal film, then carry out photoresistance and float off technique, Metal imaging is made to complete the making of metal electrode.

But, those methods above-mentioned are both needed to the making utilizing lithography technique just can complete electrode, but lithography work Skill is the most loaded down with trivial details, complicated, make on and there is higher degree of difficulty.

Furthermore, for improving the shortcoming of above-mentioned technique, its magnetic absorption assembly used is being more than 80 DEG C when operating temperature Time, the phenomenon will produce magnetic force decline, degenerating, causing cannot the problem of adsorbed close nonmagnetic metal mask.

Therefore, how to propose one to simplify technique, conveniently manufacture, manufacturing cost is greatly reduced and is applicable to high temperature work Make environment, and to make made light emitting diode have required electrode be purpose of the present utility model.

Utility model content

In view of the above problems, this utility model provides a kind of resistant to elevated temperatures light emitting diode dress that evaporation film figure is formed Put, including a carrier, a fire resistant magnetic absorbent module, a chip and a nonmagnetic metal mask.Carrier has the first appearance Between being empty and the second accommodation space.Fire resistant magnetic absorbent module is arranged in the first accommodation space.Chip is arranged at carrier In second accommodation space.Nonmagnetic metal mask covers the second accommodation space of carrier, and wherein the temperature of high temperature is more than 80 DEG C.

As it has been described above, this utility model discloses the disappearance that the existing lithography technique of improvement is loaded down with trivial details, complicated, and provide one Plant technique to simplify, reduce cost, opposing high temperature (high temperature resistant) and chip electrode can be made to facilitate the high temperature resistant light-emitting diodes of mass production The device that pipe evaporation film figure is formed.

Accompanying drawing explanation

Figure 1A and Figure 1B, the device exploded perspective formed for this utility model resistant to elevated temperatures light emitting diode evaporation film figure Figure and side view；

Fig. 2 is the use state diagram of this utility model evaporation；

Fig. 3 is the fire resistant magnetic absorbent module fading rate comparison diagram compared to general Magnet baking accumulated time.

[symbol description]

10 carriers

11,12 accommodation space

13 hole, location

20 fire resistant magnetic absorbent module

30 nonmagnetic metal masks

40 chips

50 catch

51 locating dowels

52 columns

60 evaporation rotating disks

61 evaporation sources

Detailed description of the invention

Referring to Figure 1A and Figure 1B, it is the device that this utility model resistant to elevated temperatures light emitting diode evaporation film figure is formed Exploded perspective view and side view.This utility model provides a kind of resistant to elevated temperatures light emitting diode device that evaporation film figure is formed, Including carrier 10, fire resistant magnetic absorbent module 20, nonmagnetic metal mask 30 and a chip 40.Carrier 10 has There is the first accommodation space 11 and the second accommodation space 12.Fire resistant magnetic absorbent module 20 is arranged in the first accommodation space 11. Chip 40 is arranged in the second accommodation space 12 of carrier 10.Nonmagnetic metal mask 30 covers the second accommodating sky of carrier 10 Between, wherein the temperature of high temperature is more than 80 DEG C.

Carrier 10 can be circular, square or the arbitrary shape such as triangle, and the upper and lower each extension one of the periphery of carrier 10 is suitable The frame of length, makes the upper and lower of carrier 10 respectively form an accommodation space 11,12, and is provided with number on carrier 10 1 side frame Hole, individual location 13.

Fire resistant magnetic absorbent module 20 is to cooperate with the profile of carrier 10 and designs, in order to be arranged at below carrier 10 In accommodation space 11.Nonmagnetic metal mask 30 includes the foil not having magnetic, the wherein thickness of nonmagnetic metal mask 30 Degree is 10 μm～100 μm, and it is to cooperate with carrier 10 profile and arranges.Additionally, the foil not having magnetic is provided with required Cellular geometric figure.Chip 40 is arranged in the accommodation space 12 above carrier 10.It is fixed that the corresponding carrier 10 of catch 50 is provided with Side at hole 13, position, projecting at least one locating dowel 51, opposite side central authorities arrange column 52.

As it has been described above, actual when manufacturing, fire resistant magnetic absorbent module 20 is placed in catch 50 be provided with locating dowel 51 it Locate, then the side that carrier 10 is provided with hole 13, location down and fastens with locating dowel 51, makes fire resistant magnetic absorbent module 20 put In accommodation space 11 below carrier 10, it addition, chip 40 is placed in the accommodation space 12 above carrier 10, the most again will The nonmagnetic metal mask 30 being provided with required figure is placed in the surface of chip 40, makes nonmagnetic metal mask 30 completely cover chip 40, now, nonmagnetic metal mask 30 is i.e. adsorbed by the magnetic force of the fire resistant magnetic absorbent module 20 of lower section, chip 40 then by Nonmagnetic metal mask 30 is clamped with fire resistant magnetic absorbent module 20 and is fixed, in order to catch 50 is deposited with, and in core Electrode needed for directly being formed on sheet 40.

Referring to Fig. 2, it is the use state diagram of this utility model evaporation.Evaporation rotating disk 60 includes a sphere portion, and with It is oppositely arranged with a preset distance between some evaporation source 61.Furthermore, utilize column 52 set bottom catch 50, with by multiple Catch 50 is incorporated in the sphere portion of evaporation rotating disk 60, makes the chip 40 on each catch 50 be close to into vertical with some evaporation source 61 Angle, so that pattern transfer is complete and reduces the decline of pattern periphery thickness, and facilitates chip 40 plated film imaging.

Referring to table 1 and Fig. 3, table 1 is fire resistant magnetic absorbent module declining compared to general Magnet baking accumulated time Moving back rate comparison sheet, Fig. 3 is the fire resistant magnetic absorbent module fading rate comparison diagram compared to general Magnet baking accumulated time. In this utility model case, fire resistant magnetic absorbent module 20 includes high temperature resistant Magnet, and it refers to bear ambient temperature 80 Magnet more than DEG C.It is noted that the baking temperature tested in table 1 is using 100 DEG C as test temperature, but in this practicality It is not limited thereto in novel.By contrast, general Magnet through identical baking time and identical ambient temperature it After, the amplitude of its magnetic force decline is far longer than the degree of fire resistant magnetic absorbent module 20 decline, thus may have influence on absorption The tightness degree of nonmagnetic metal mask 30.

Table 1

In this utility model, fire resistant magnetic absorbent module 20 includes ndfeb magnet, samarium cobalt magnet and aluminum nickel cobalt Magnet, is not limited thereto in this utility model.According to different operating temperature ranges, user may select the resistance to of different materials High-temperature magnetic absorbent module.Referring to table 2, it is that fire resistant magnetic absorbent module is in the neodymium-iron-boron of various operating temperature ranges Iron material performance plot.Such as, between the operating temperature of 80 DEG C to 240 DEG C, different types of neodymium-iron-boron can be selected according to table 2 Ferrum, including M type, H type, SH type, UH type, EH type and AH type.Additionally, according to other experimental result, in 240 DEG C to 350 DEG C Between operating temperature, the samarium cobalt magnet of optional different mixing proportion, such as between the operating temperature of 240 DEG C to 250 DEG C, can Select the samarium cobalt magnet of 1:5 ratio, between the operating temperature of 250 DEG C to 350 DEG C, can be selected for the samarium cobalt magnet of 2:17 ratio. During operating temperature more than 350 DEG C, optional alnico magnet.It is noted that the above-mentioned operating temperature numerical range defined It is not certain standard, but the control reference selected as user.

Table 2

From the foregoing, it will be observed that have the advantage that 1 with device of the present utility model, change existing chip electrode and need to lose with lithographic The shortcoming carving cumbersome, difficult fabrication techniques, and the making of chip electrode is completed with the technique simplified, therefore system can be greatly reduced Make cost.2, through carrier of the present utility model, magnetic absorption assembly and the use of nonmagnetic metal mask, chip electrode is made Making can facilitate mass production.3, select very thin nonmagnetic metal mask the absorption through magnetic absorption assembly, make non-magnetic Property metal mask adhere well to chip, and the most each chip all angles with near vertical are relative with evaporation source metal, therefore non- The complete pattern periphery thickness that simultaneously reduces of pattern transfer on magnetic metal mask declines.4, select according to different operating temperatures The fire resistant magnetic absorbent module of differing material properties can be further adapted to the working environment of high temperature.

In sum, this utility model discloses the disappearance that the existing lithography technique of improvement is loaded down with trivial details, complicated, and provides one Plant technique to simplify, reduce cost, opposing high temperature (high temperature resistant) and chip electrode can be made to facilitate the high temperature resistant light-emitting diodes of mass production The device that pipe evaporation film figure is formed, has the value in novelty, and industry, proposes utility model patent Shen in accordance with the law Please.

Claims (10)

1. the device that a resistant to elevated temperatures light emitting diode evaporation film figure is formed, it is characterised in that including:

One carrier, has one first accommodation space and one second accommodation space；

One fire resistant magnetic absorbent module, is arranged in this first accommodation space；

One chip, is arranged in this second accommodation space of this carrier；And

One nonmagnetic metal mask, covers this second accommodation space of this carrier；

Wherein, the temperature of this high temperature is more than 80 DEG C.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 1 evaporation film figure is formed, it is characterised in that wherein This nonmagnetic metal mask has porous geometric figure.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 1 evaporation film figure is formed, it is characterised in that wherein The thickness of this nonmagnetic metal mask is between 10 μm～100 μm.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 1 evaporation film figure is formed, it is characterised in that wherein This first accommodation space periphery of this carrier arranges hole, multiple location.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 4 evaporation film figure is formed, it is characterised in that also wrap Including a catch, its one side has at least one locating dowel, and it is combined to cover this first accommodation space with hole, the plurality of location.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 1 evaporation film figure is formed, wherein this high temperature resistant magnetic Property absorbent module select different Magnet according to different operating temperature range.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 6 evaporation film figure is formed, it is characterised in that wherein This fire resistant magnetic absorbent module is to select different types of ndfeb magnet between the operating temperature of 80 DEG C to 240 DEG C.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 6 evaporation film figure is formed, it is characterised in that wherein This fire resistant magnetic absorbent module is to select the samarium cobalt magnet of different mixing proportion between the operating temperature of 240 DEG C to 350 DEG C.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 6 evaporation film figure is formed, it is characterised in that wherein This fire resistant magnetic absorbent module is to select alnico magnet in the operating temperature more than 350 DEG C.

The device that resistant to elevated temperatures light emitting diode the most as claimed in claim 1 evaporation film figure is formed, it is characterised in that also Including an evaporation rotating disk, for repeating to be installed on this by the device that these resistant to elevated temperatures light emitting diodes multiple evaporation film figure is formed In one sphere portion of evaporation rotating disk, make evaporation source metal coating imaging.