CN205810864U - A kind of organic semiconductor device thin-film packing structure based on lithium fluoride/polyvinyl alcohol alternate thin films - Google Patents
A kind of organic semiconductor device thin-film packing structure based on lithium fluoride/polyvinyl alcohol alternate thin films Download PDFInfo
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- CN205810864U CN205810864U CN201620030854.9U CN201620030854U CN205810864U CN 205810864 U CN205810864 U CN 205810864U CN 201620030854 U CN201620030854 U CN 201620030854U CN 205810864 U CN205810864 U CN 205810864U
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- lithium fluoride
- polyvinyl alcohol
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Abstract
This utility model provides a kind of organic semiconductor device thin-film packing structure based on lithium fluoride/polyvinyl alcohol alternate thin films, first prepares lithium fluoride cushion, is then sequentially prepared polyvinyl alcohol/lithium fluoride and replaces packaging film.This patent thin-film packing structure mainly possesses following characteristics: 1. lithium fluoride cushion (6) is covered on organic optoelectronic device (5), its yardstick is suitable, so that the electrode of organic semiconductor device to be packaged (2 and 4) is exposed, and the organic semiconductor active layer (3) of organic semiconductor device is entirely encapsulated inside；2. ground floor polyvinyl alcohol encapsulated layer (701) is covered on lithium fluoride cushion (6), ground floor lithium fluoride encapsulated layer (702) is covered on ground floor polyvinyl alcohol encapsulated layer (701), lithium fluoride encapsulated layer and polyvinyl alcohol encapsulated layer are the most alternately stacked to n-th layer lithium fluoride encapsulated layer (NO2), and N is the integer more than or equal to 1.
Description
[technical field]
This utility model belongs to organic semiconductor device encapsulation field, particularly to one based on lithium fluoride/polyvinyl alcohol
The organic semiconductor device thin-film packing structure of alternate thin films.
[background technology]
Organic semiconductor device, in addition to the fundamental characteristics possessing inorganic device, has also acted on organic semiconducting materials matter
Gently, low cost, preparation technology are simple, pliability good, be prone to the advantage such as large area and miniaturization, and organic semiconductor device
The abundant species of middle organic functional material, has broad application prospects.Since the eighties in last century, including IBM, Sony,
Numerous renowned companies, the university research mechanisms such as Samsung, Princeton University and Cambridge University are all in organic semiconductor device field
Carry out substantial amounts of research.At present, organic semiconductor device mainly includes field effect transistors (OFET), organic light emission two
Pole pipe (OLED) and organic photovoltaic battery (OPC) etc..
The speed that organic semiconductor device updates about is come the fastest, and its product is also lighter towards weight, and volume is less, and thickness is more
Thin, that performance is more excellent trend development.But compared to inorganic device, organic semiconductor device then demonstrates the biggest in terms of stability
Deficiency.Scientists by different humidity, different temperatures test environment in organic semiconductor device is measured
Shi Faxian: the principal element affecting the organic electronic device life-span is the water in air, oxygen.They can be from the surface endosmosis of device
Thoroughly, organic semiconductor device is caused the biggest damage, has a strong impact on the performance of organic semiconducting materials and electrode material, from
And make device performance degradation.Therefore, the encapsulation of organic semiconductor device just seems particularly significant.
Traditional glass/metal bonnet method for packing, many times, can basically reach the device requirement to encapsulation,
Life-span and the performance of device can be effectively improved, but along with the development of semiconductor fabrication and to chip package
Technology require improve constantly, traditional method for packing cannot meet device for encapsulation gentlier, the requirement of thinner development,
And the cost of this packaged type is of a relatively high.The novel encapsulated way replacing this conventional package mode uses thin film exactly
Encapsulation, the most the most frequently used thin-film package mode has organic film encapsulation, inorganic thin film encapsulation, organic/inorganic mixed film envelope
Dress, inorganic/inorganic thin film hybrid package etc..
Inorganic thin film typically has good mechanical performance, and thin film is the most all continuous and the finest and close, right
The highest deadening ability is had in steam and oxygen.But inorganic thin film deposition during, can cannot avoid on thin film shape
Become the crackle etc. of defect, such as Pinhole-shaped；Along with the slowly increase of film thickness, can be formed bigger at inorganic thin film encapsulated layer
Internal stress.The formation of these internal stress and the generation of defect, can make steam and oxygen be easy to by inorganic thin film and encapsulate
Layer enters device inside, has a strong impact on the performance of device, and then causes the effect of encapsulation to be substantially reduced.
Compared to inorganic thin film, organic film flexility is good, can perform well in the encapsulation of flexible device；Organic thin
The device weight of film encapsulation is the lightest, and the cost performance of product is higher.But compared with inorganic thin film, organic film is for steam
Poor with the barrier property of oxygen.
Considering organic and these pluses and minuses inorganic thin film, simple employing is organic or inorganic thin film encapsulates organic
Electronic device, all can make steam and oxygen be relatively easy to by thin-film encapsulation layer and enter device inside, have a strong impact on device
Performance, and then cause encapsulation effect be substantially reduced.And use the packaged type of organic/inorganic thin layer stack of alternating simultaneously
Time, in inorganic thin film encapsulated layer, the defect of Pinhole-shaped and the internal stress of thin layer are obtained for and significantly reduce, compared to adopting
Encapsulating with the inorganic thin film of monolayer, the effect of encapsulation and quality are obtained for and are obviously improved.
A kind of based on lithium fluoride/polyvinyl alcohol alternate thin films the organic semiconductor device thin film envelope that this utility model provides
Assembling structure does not limit the kind of organic semiconductor device, and the inorganic material lithium fluoride wherein used serves for the encapsulation of device
Well protective effect, and organic material polyvinyl alcohol can improve the packaging effect of lithium fluoride.This lithium fluoride/polyvinyl alcohol
Alternate thin films encapsulation can be effectively improved life-span and the stability of organic semiconductor device.
[summary of the invention]
The purpose of this utility model is to provide a kind of organic semiconductor device based on lithium fluoride/polyvinyl alcohol alternate thin films
Thin-film packing structure.
Utilize organic semiconductor device thin film based on the lithium fluoride/polyvinyl alcohol alternate thin films envelope that this utility model provides
The device of assembling structure encapsulation, its structure is as it is shown in figure 1, include substrate (1), organic semiconductor device (5), lithium fluoride cushion
(6), the first polyvinyl alcohol encapsulated layer (701), the first lithium fluoride encapsulated layer (702), N polyvinyl alcohol encapsulated layer (N01), N
Lithium fluoride encapsulated layer (N02)；Lithium fluoride cushion is covered on organic semiconductor device, and the first polyvinyl alcohol encapsulated layer covers
On lithium fluoride cushion, the first lithium fluoride encapsulated layer is covered on the first polyvinyl alcohol encapsulated layer, lithium fluoride encapsulated layer
Can be the most alternately stacked to N lithium fluoride encapsulated layer with polyvinyl alcohol encapsulated layer, N is the integer more than or equal to 1.This encapsulating structure
In, the width of organic semiconductor device is less than the width of substrate, and encapsulated layer covers whole organic semiconductor device；Lithium fluoride seals
The preparation method of dress layer is Vacuum sublimation, and the preparation method of polyvinyl alcohol encapsulated layer is solution spin-coating method；Lithium fluoride buffers
Layer is used for preventing polyvinyl alcohol water solution in spin coating process from impacting organic semiconductor device.
Organic semiconductor device thin-film package based on the lithium fluoride/polyvinyl alcohol alternate thin films knot that this utility model provides
Structure, comprises the steps:
1. on organic semiconductor device, use the mode depositing fluorinated lithium cushion of vacuum thermal evaporation；
2. on lithium fluoride cushion, polyvinyl alcohol encapsulated layer is prepared with spin-coating method；
3., after preparing polyvinyl alcohol encapsulation, it is dried process；
4. on polyvinyl alcohol encapsulated layer, use the mode depositing fluorinated lithium encapsulated layer of vacuum thermal evaporation；
5. repeat the above steps 2.-4., lithium fluoride encapsulated layer is prepared the polyvinyl alcohol of (N-1) layer/lithium fluoride again and hands over
For thin film；
6. at a temperature of 200 DEG C, packaging is heated 2 hours, polyvinyl alcohol is cross-linked.
Technical Analysis of the present utility model:
A kind of based on lithium fluoride/polyvinyl alcohol alternate thin films the encapsulating structure that this utility model provides is first organic half
The surface vacuum thermal evaporation methods of conductor device prepares one layer of lithium fluoride thin film, for the polyvinyl alcohol film that spin coating below is smooth
Carry out protection, reduce the aqueous solvent impact on device simultaneously；Then use spin coating method and vacuum thermal evaporation methods preparation poly-
Organic semiconductor device is packaged by vinyl alcohol/lithium fluoride alternate thin films.
[accompanying drawing explanation]
The structural representation of the organic semiconductor device of the thin-film packing structure encapsulation that Fig. 1 provides for using this utility model
Figure.In figure, (1) be substrate, (2) be hearth electrode, (3) be active layer, (4) be top electrode, (5) be organic semiconductor device, (6)
For lithium fluoride cushion, (701) be the first polyvinyl alcohol encapsulated layer, (702) be the first lithium fluoride encapsulated layer, (N01) be that N gathers
Vinyl alcohol encapsulated layer, (N02) are N lithium fluoride encapsulated layer.
[detailed description of the invention]
Below with structure for " tin indium oxide (ITO) glass (conductive substrates)/CuPc (active layer)/aluminum (top electrode) "
As a example by organic semiconductor diodes thin-film package, the utility model is described in further detail.
Embodiment
The present embodiment uses encapsulating structure based on lithium fluoride/polyvinyl alcohol alternate thin films to organic half as steps described below
Conductor device carries out thin-film package:
1) on the ITO cleaned up, phthalocyanine copper film and aluminum thin film are prepared with vacuum thermal evaporation methods successively；
2) using the method for vacuum thermal evaporation to prepare lithium fluoride cushion, vacuum during evaporation is 1 × 10-3Pascal,
The heating source used is molybdenum boat.The evaporation rate of lithium fluoride is 6 angstroms per second, and the time is 1 hour, the lithium fluoride film thickness of preparation
It is 2 μm；
3) using spin-coating method to prepare polyvinyl alcohol packaging film, starting 9 seconds interior rotating speeds of spin coating is 40 revs/min, it
After rotating speed reach 3000 revs/min, spin-coating time is 3 minutes.The polyvinyl alcohol film thickness of preparation is 1.13 μm；
4) after preparing polyvinyl alcohol packaging film, needing to dry in thermostatic drying chamber, vacuum is 10 Pascals, temperature
Degree is 40 DEG C, and the time is 2 hours；
5) using the method for vacuum thermal evaporation to prepare lithium fluoride packaging film, vacuum during evaporation is 1 × 10-3Paasche
Card, the heating source of use is molybdenum boat, and the driving circuit current of heating source is 50A.The evaporation rate of lithium fluoride is 6 angstroms per second, the time
Being 1 hour, the lithium fluoride film thickness of preparation is 2 μm；
6) step 2 is repeated)～5), prepare the polyvinyl alcohol/lithium fluoride packaging film in 5 cycles；
7) device of encapsulation is heated 2 hours at a temperature of 200 DEG C, polyvinyl alcohol is cross-linked.
Claims (1)
1. an organic semiconductor device thin-film packing structure based on lithium fluoride/polyvinyl alcohol alternate thin films, it is characterised in that
Including lithium fluoride cushion and polyvinyl alcohol, lithium fluoride hybrid package layer；Wherein lithium fluoride cushion is covered in organic optoelectronic
On device, the first polyvinyl alcohol encapsulated layer is covered on lithium fluoride cushion, and the first lithium fluoride encapsulated layer is covered in first
On polyvinyl alcohol encapsulated layer, lithium fluoride encapsulated layer and polyvinyl alcohol encapsulated layer are the most alternately stacked to N lithium fluoride encapsulated layer,
N is the integer more than or equal to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620030854.9U CN205810864U (en) | 2016-01-08 | 2016-01-08 | A kind of organic semiconductor device thin-film packing structure based on lithium fluoride/polyvinyl alcohol alternate thin films |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620030854.9U CN205810864U (en) | 2016-01-08 | 2016-01-08 | A kind of organic semiconductor device thin-film packing structure based on lithium fluoride/polyvinyl alcohol alternate thin films |
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| Publication Number | Publication Date |
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| CN205810864U true CN205810864U (en) | 2016-12-14 |
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| CN201620030854.9U Expired - Fee Related CN205810864U (en) | 2016-01-08 | 2016-01-08 | A kind of organic semiconductor device thin-film packing structure based on lithium fluoride/polyvinyl alcohol alternate thin films |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514274A (en) * | 2016-01-08 | 2016-04-20 | 中国计量学院 | Organic semiconductor device thin film packaging technology based on lithium fluoride/polyvinyl alcohol alternative thin film |
| CN109037460A (en) * | 2017-06-08 | 2018-12-18 | 上海和辉光电有限公司 | A kind of flexible substrate and preparation method thereof |
-
2016
- 2016-01-08 CN CN201620030854.9U patent/CN205810864U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514274A (en) * | 2016-01-08 | 2016-04-20 | 中国计量学院 | Organic semiconductor device thin film packaging technology based on lithium fluoride/polyvinyl alcohol alternative thin film |
| CN105514274B (en) * | 2016-01-08 | 2019-10-01 | 中国计量学院 | It is a kind of based on lithium fluoride/polyvinyl alcohol alternate thin films organic semiconductor device thin film encapsulation technology |
| CN109037460A (en) * | 2017-06-08 | 2018-12-18 | 上海和辉光电有限公司 | A kind of flexible substrate and preparation method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161214 Termination date: 20180108 |