CN205691270U - A kind of silicon single crystal wafer pressure sensor device - Google Patents
A kind of silicon single crystal wafer pressure sensor device Download PDFInfo
- Publication number
- CN205691270U CN205691270U CN201620645808.XU CN201620645808U CN205691270U CN 205691270 U CN205691270 U CN 205691270U CN 201620645808 U CN201620645808 U CN 201620645808U CN 205691270 U CN205691270 U CN 205691270U
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- CN
- China
- Prior art keywords
- single crystal
- crystal wafer
- silicon single
- conduit
- monocrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model discloses a kind of silicon single crystal wafer pressure sensor device, its structure includes outer tube, conduit, protection circuit device, housing, protecting film, sensing plate, silicon single crystal wafer, Magnet, substrate, monocrystalline silicon layer, monocrystalline silicon thin film, vacuum chamber, described housing connects described conduit, described conduit two ends are connected to described outer tube, described enclosure interior is connected to described protection circuit device, described conduit is connected to described sensing plate, described sensing plate is connected to described protecting film, described sensing plate is connected to described silicon single crystal wafer, described silicon single crystal wafer is provided with substrate, described substrate is provided with described monocrystalline silicon layer, described monocrystalline silicon layer is provided with described monocrystalline silicon thin film, described vacuum chamber is formed between described monocrystalline silicon thin film and described substrate, cross section on described vacuum chamber vertical direction at an arbitrary position is trapezium structure.This utility model product silicon single crystal wafer compressive property is high, is hardly damaged, and transducing signal is not readily susceptible to interference.
Description
Technical field
This utility model relates to electronic induction apparatus field, particularly relates to a kind of silicon single crystal wafer pressure sensor device.
Background technology
Sensor is a kind of detection device, can experience measured information, and the information that can will experience, by a set pattern
Rule is for conversion into the information output of the signal of telecommunication or other desired forms, with meet information transmission, process, store, show, record
With requirements such as controls.
Prior art discloses a kind of detection device of Application No. 201520856831.9, including sensing probe and biography
Sensor main body, described sensing probe is connected with sensor main body, under described sensor main body is provided with in upper cover, fastening and upper cover
Side plate around lid and upper and lower cover, is additionally provided with information generator in the inside of sensor main body；Described information generator includes electricity
Source, microprocessor；It is additionally provided with alarm in the inside of described sensor main body；But compressive property is low, fragile, transducing signal
It is easily subject to interference.
Utility model content
To the problems referred to above, this utility model provides a kind of silicon single crystal wafer pressure sensor device, solves compressive property
Low, fragile, transducing signal be easily subject to interference problem.
For solving above-mentioned technical problem, this utility model be the technical scheme is that a kind of silicon single crystal wafer pressure passes
Induction device, its structure includes outer tube, conduit, protection circuit device, housing, protecting film, sensing plate, silicon single crystal wafer, Magnet, lining
The end, monocrystalline silicon layer, monocrystalline silicon thin film, vacuum chamber, described housing connect described conduit, described conduit two ends be connected to described outside
Pipe, described enclosure interior is connected to described protection circuit device, and described conduit is connected to described Magnet, and described conduit is connected to described
Sensing plate, described sensing plate is connected to described protecting film, and described sensing plate is connected to described silicon single crystal wafer, described monocrystal silicon core
Sheet is provided with substrate, and described substrate is provided with described monocrystalline silicon layer, and described monocrystalline silicon layer is provided with described monocrystalline silicon thin film, described
Described vacuum chamber, the cross section on described vacuum chamber vertical direction at an arbitrary position is formed between monocrystalline silicon thin film and described substrate
It is trapezium structure.
Further, described housing is welding rustless steel.
Further, described conduit runs through the described housing of connection.
Further, described conduit is connected to described protection circuit device.
Further, it is provided with arc linkage section between side end face and the upper surface of described vacuum chamber.
From the above-mentioned description to this utility model structure, compared to the prior art, this utility model has the most excellent
Point:
This utility model product silicon single crystal wafer compressive property is high, is hardly damaged, and transducing signal is not readily susceptible to interference.
Accompanying drawing explanation
The accompanying drawing of the part constituting the application is used for providing being further appreciated by of the present utility model, of the present utility model
Schematic description and description is used for explaining this utility model, is not intended that improper restriction of the present utility model.At accompanying drawing
In:
Fig. 1 is the internal structure schematic diagram of this utility model a kind of silicon single crystal wafer pressure sensor device；
Fig. 2 is the silicon single crystal wafer schematic diagram of this utility model a kind of silicon single crystal wafer pressure sensor device.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to this utility model.Should be appreciated that specific embodiment described herein is only in order to explain
This utility model, is not used to limit this utility model.
Embodiment 1
With reference to Fig. 1 and Fig. 2, a kind of silicon single crystal wafer pressure sensor device, its structure includes outer tube 1, conduit 2, protective wire
Road device 3, housing 4, protecting film 5, sensing plate 6, silicon single crystal wafer 7, Magnet 8, substrate 10, monocrystalline silicon layer 12, monocrystalline silicon thin film 9,
Vacuum chamber 11, described housing 4 connects described conduit 2, and described conduit 2 two ends are connected to described outer tube 1, and described housing 4 is internal to be connected
The most described protection circuit device 3, described conduit 2 is connected to described Magnet 8, and described conduit 2 is connected to described sensing plate 6, described
Sensing plate 6 is connected to described protecting film 5, and described sensing plate 6 is connected to described silicon single crystal wafer 7, and described silicon single crystal wafer 7 is provided with
Substrate 10, is provided with described monocrystalline silicon layer 12 on described substrate 10, described monocrystalline silicon layer 12 is provided with described monocrystalline silicon thin film 9,
Described vacuum chamber 11 is formed, described vacuum chamber 11 at an arbitrary position vertical between described monocrystalline silicon thin film 9 and described substrate 10
Cross section on direction is trapezium structure, and described housing 4 is welding rustless steel, and described conduit 2 runs through the described housing 4 of connection,
Described conduit 2 is connected to described protection circuit device 3, is provided with arc and is connected between side end face and the upper surface of described vacuum chamber 11
Section.This utility model product silicon single crystal wafer compressive property is high, is hardly damaged, and transducing signal is not readily susceptible to interference.
Pressure transducer is to form semiconductor strain pressure at sheet surface, makes thin metal plate produce by external force (pressure)
Raw Piezoelectric Impedance effect, so that the change of impedance is converted into the signal of telecommunication.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all at this
Any amendment, equivalent and the improvement etc. made within the spirit of utility model and principle, should be included in this utility model
Protection domain within.
Claims (6)
1. a silicon single crystal wafer pressure sensor device, it is characterised in that: its structure includes outer tube (1), conduit (2), protective wire
Road device (3), housing (4), protecting film (5), sensing plate (6), silicon single crystal wafer (7), Magnet (8), substrate (10), monocrystalline silicon layer
(12), monocrystalline silicon thin film (9) and vacuum chamber (11), described housing (4) connects described conduit (2), described conduit (2) two ends
Being connected to described outer tube (1), described housing (4) is internal is connected to described protection circuit device (3), and described conduit (2) is connected to institute
Stating Magnet (8), described conduit (2) is connected to described sensing plate (6), and described sensing plate (6) is connected to described protecting film (5), institute
Stating sensing plate (6) and be connected to described silicon single crystal wafer (7), described silicon single crystal wafer (7) is provided with substrate (10), described substrate (10)
On be provided with described monocrystalline silicon layer (12), described monocrystalline silicon layer (12) is provided with described monocrystalline silicon thin film (9), and described monocrystal silicon is thin
Described vacuum chamber (11) is formed between film (9) and described substrate (10).
A kind of silicon single crystal wafer pressure sensor device, it is characterised in that: described vacuum chamber (11) exists
Cross section on the vertical direction of optional position is trapezium structure.
A kind of silicon single crystal wafer pressure sensor device, it is characterised in that: described housing (4) is nothing
Soldering stainless steel.
A kind of silicon single crystal wafer pressure sensor device, it is characterised in that: described conduit (2) runs through
Connect described housing (4).
A kind of silicon single crystal wafer pressure sensor device, it is characterised in that: described conduit (2) connects
Described protection circuit device (3).
A kind of silicon single crystal wafer pressure sensor device, it is characterised in that: described vacuum chamber (11)
Arc linkage section it is provided with between side end face and upper surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620645808.XU CN205691270U (en) | 2016-06-27 | 2016-06-27 | A kind of silicon single crystal wafer pressure sensor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620645808.XU CN205691270U (en) | 2016-06-27 | 2016-06-27 | A kind of silicon single crystal wafer pressure sensor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205691270U true CN205691270U (en) | 2016-11-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620645808.XU Expired - Fee Related CN205691270U (en) | 2016-06-27 | 2016-06-27 | A kind of silicon single crystal wafer pressure sensor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205691270U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113340519A (en) * | 2021-04-27 | 2021-09-03 | 郑志扬 | High-stability monocrystalline silicon differential pressure sensor |
-
2016
- 2016-06-27 CN CN201620645808.XU patent/CN205691270U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113340519A (en) * | 2021-04-27 | 2021-09-03 | 郑志扬 | High-stability monocrystalline silicon differential pressure sensor |
| CN113340519B (en) * | 2021-04-27 | 2022-07-19 | 安徽允昊物联网科技有限公司 | High-stability monocrystalline silicon differential pressure sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161116 Termination date: 20170627 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |