CN205654027U - Energy -conserving fast fever type nanometer geothermal floor - Google Patents
Energy -conserving fast fever type nanometer geothermal floor Download PDFInfo
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- CN205654027U CN205654027U CN201620108871.XU CN201620108871U CN205654027U CN 205654027 U CN205654027 U CN 205654027U CN 201620108871 U CN201620108871 U CN 201620108871U CN 205654027 U CN205654027 U CN 205654027U
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Abstract
The utility model provides an energy -conserving fast fever type nanometer geothermal floor, including solid wood layer, coating at the heat conduction nanometer dope layer of solid wood layer upper surface and the substrate layer of laminating with the solid wood layer lower surface, the upper surface and the lower surface of substrate layer are equipped with heat -sink and heat conduction hole. Compare with current geothermal floor, the utility model discloses have the heating rate height, reduce that the heat is piled up and reduce energy consumption's advantage.
Description
Technical field
The invention belongs to floor panel structure technical field, especially relate to a kind of heating floor.
Background technology
Floor heating full name is floor panel heating, is the heat that radiates of the heating source heating floor by laying at below ground, and producing human body skin stimulates, and makes the heating system that people basks.Compared with traditional convection current heating system, floor heating can improve the air quality of indoor, reduces indoor air convection and then reduces airborne dust, and flcating germ reduces, and is conducive to building healthy indoor environment；It is more beneficial for health comfortable.Different from tradition heating system, floor heating makes indoor temperature be gradually lowered from bottom to top, and the temperature of floor surface is higher than the respiratory system temperature of people, to the warm cool comfort of a kind of foot of people；And owing to thermal source (such as heating pipe, carbon fibre electrothermal wire) is laid under floor, effectively save the space placing warming sheet, facilitate putting of indoor furniture and decoration.
The floor of traditional floor heating is of a great variety, but limited by structure and the material on existing floor, these floors reach the time very long (generally requiring more than 3 hours) of expection design temperature, have had a strong impact on the room effect of floor heating, and have easily formed heat build-up and form potential safety hazard.
Summary of the invention
This utility model main purpose is to provide a kind of energy-saving quick heating type nanometer heating floor, and compared with existing heating floor, this utility model has heating rate height, reduces heat build-up and reduce the advantage of energy resource consumption.
For reaching above-mentioned technical purpose, this utility model have employed techniques below scheme: energy-saving quick heating type nanometer heating floor includes solid wood layer, the heat conducting nano dope layer being coated in solid wood layer upper surface and the substrate layer with the laminating of solid wood layer lower surface, and the upper and lower surface of described substrate layer is equipped with thermal trough and thermal hole.
Underfloor heat could need to conduct to room air through floor, and this utility model is provided with thermal trough and thermal hole in floor base sheet material layers, and the heat energy of base material lower floor is flowed by thermal trough and is delivered to solid wood layer lower surface by thermal hole.This is greatly accelerated energy transfer rate, reduces and reaches the required heating-up temperature set of indoor temperature, saves the energy, do not result in the problems of crack that floor causes because of excessive dehydration simultaneously.
As preferably, described nanometer heating floor includes solid wood layer, the heat conducting nano dope layer being coated in solid wood layer upper surface and the substrate layer with the laminating of solid wood layer lower surface, and the upper and lower surface of described substrate layer is provided with thermal trough and thermal hole.Heat energy can quickly be spread by thermal trough and make each spot temperature of base material close, and the heat energy of base material lower surface can be delivered to solid wood layer lower surface by thermal hole, accelerates heating rate.
As preferably, described thermal hole runs through substrate layer, and its both ends open lays respectively in the thermal trough of substrate layer upper and lower surface.
As preferably, between described solid wood layer and substrate layer, it is provided with the first cementing layer.
As preferably, described substrate layer lower surface is provided with the waterproofing membrane layer fitted therewith, is provided with the second cementing layer between substrate layer and waterproofing membrane layer.
As preferably, the thickness of described substrate layer is 4-8cm, a diameter of 1-3cm of thermal trough.
As preferably, a diameter of 0.4-1cm of described thermal hole.
As preferably, between adjacent two thermal holes of described substrate layer, part is provided with thermal conductive cavity.Thermal conductive cavity set by substrate layer can accelerate heat conduction velocity, can play again the effect of quiet noise reduction.
As preferably, in described thermal conductive cavity, it is provided with metallic supports and semiconductor heating sheet.Metallic supports can strengthen floor anti-pressure ability, it is ensured that thermal conductive cavity is indeformable.
As preferably, described semiconductor heating sheet includes the cold end for heat absorption, for hot junction, the N-type semiconductor being arranged between described cold end and hot junction and the P-type semiconductor, the described N-type semiconductor of connection and the metallic conductor of described P-type semiconductor, the power supply that dispel the heat；Described metallic conductor is provided for electrically connecting the positive and negative electrode of described power supply；Described N-type semiconductor arranges graphene layer, or described P-type semiconductor arranges graphene layer, or described N-type semiconductor and described P-type semiconductor are respectively provided with graphene layer.
Graphene in quasiconductor has the high electron mobility of high thermal conductivity and conductivity, it is possible to promote described P-type semiconductor and described N-type semiconductor to be more quickly formed stable P pole or N pole with less energy consumption；Meanwhile, the heat conductivility that Graphene is high can improve the heat transfer velocity in described heating and cooling semiconductor chip and ability.Making the described cold of described heating and cooling semiconductor chip support continuous generation cold, the hot junction of described heating and cooling semiconductor chip persistently produces heat, improves the temperature difference of the described heating and cooling semiconductor chip cold end of heat.Even if described hot junction is also not provided with heating and cooling semiconductor chip described in heat abstractor and also can protect it from burning, it is ensured that it normally works.
As preferably, described heat conducting nano dope layer is lamellar graphite alkene heat conducting nano dope layer.
Graphene is a kind of layer structure material with perfect crystal structure and excellent heat conducting performance, its heat conductivity is up to 5300 W/mK, containing functionalization graphene nano material in this utility model dope layer, can effectively improve the heating rate of floor surface, save the time reaching design temperature, and owing to the heat diffusivity that Graphene is good can make uniformity of temperature profile empty calory pile up, eliminate safe hidden trouble.In sum, this utility model has the advantages that
1, this utility model heating floor is provided with thermal trough, thermal hole and thermal conductive cavity, it is possible to effectively promotes thermal energy conduction efficiency, the most also has the effect of sound insulation and noise reduction.Thermal conductive cavity is provided with metallic supports, it is possible to promote floor anti-pressure ability.
2, this utility model heating floor heat conducting nano dope layer is Graphene heat conducting nano dope layer, can effectively improve the heating rate of floor surface, save the time reaching design temperature, and owing to the heat diffusivity that Graphene is good can make uniformity of temperature profile empty calory pile up, eliminate safe hidden trouble.
Accompanying drawing explanation
Fig. 1 is this utility model one energy-saving quick heating type nanometer heating floor schematic diagram；
Fig. 2 is this utility model semiconductor heating sheet schematic diagram.
Detailed description of the invention
The realization of this utility model purpose, functional characteristics and beneficial effect is further illustrated below in conjunction with specific embodiment and accompanying drawing.This specific embodiment is only to explanation of the present utility model; it is not to restriction of the present utility model; the present embodiment can be made after reading this specification by those skilled in the art as required does not has the amendment of creative contribution, but as long as all being protected by Patent Law in right of the present utility model.
Embodiment
1
A kind of energy-saving quick heating type nanometer heating floor, the heat conducting nano dope layer 2 including solid wood layer 1, being coated in solid wood layer 1 upper surface and the substrate layer 3 fitted with solid wood layer 1 lower surface, the first cementing layer 4 it is provided with between solid wood layer 1 and substrate layer 3, substrate layer 3 lower surface is provided with the waterproofing membrane layer 5 fitted therewith, and is provided with the second cementing layer 6 between substrate layer 3 and waterproofing membrane layer 5.The thickness of substrate layer 3 is 4cm, and its upper and lower surface is equipped with thermal trough 31 and thermal hole 32, a diameter of 1cm of thermal trough 31, and thermal hole 32 then runs through substrate layer 3, a diameter of 0.4.Its both ends open lays respectively in the thermal trough 31 of substrate layer 3 upper and lower surface.Substrate side surface part between adjacent two thermal troughs 31 is provided with thermal conductive cavity 33, is provided with metallic supports 34 in thermal conductive cavity.
Embodiment
2
A kind of energy-saving quick heating type nanometer heating floor, the heat conducting nano dope layer 2 including solid wood layer 1, being coated in solid wood layer 1 upper surface and the substrate layer 3 fitted with solid wood layer 1 lower surface, the first cementing layer 4 it is provided with between solid wood layer 1 and substrate layer 3, substrate layer 3 lower surface is provided with the waterproofing membrane layer 5 fitted therewith, and is provided with the second cementing layer 6 between substrate layer 3 and waterproofing membrane layer 5.The thickness of substrate layer 3 is 6cm, and its upper and lower surface is equipped with thermal trough 31 and thermal hole 32, a diameter of 2cm of thermal trough 31, and thermal hole 32 then runs through substrate layer 3, a diameter of 0.6cm.Its both ends open lays respectively in the thermal trough 31 of substrate layer 3 upper and lower surface.Substrate side surface part between adjacent two thermal troughs 31 is provided with thermal conductive cavity 33, is provided with metallic supports 34 in thermal conductive cavity.
Embodiment
3
A kind of energy-saving quick heating type nanometer heating floor, the heat conducting nano dope layer 2 including solid wood layer 1, being coated in solid wood layer 1 upper surface and the substrate layer 3 fitted with solid wood layer 1 lower surface, the first cementing layer 4 it is provided with between solid wood layer 1 and substrate layer 3, substrate layer 3 lower surface is provided with the waterproofing membrane layer 5 fitted therewith, and is provided with the second cementing layer 6 between substrate layer 3 and waterproofing membrane layer 5.The thickness of substrate layer 3 is 8cm, and its upper and lower surface is equipped with thermal trough 31 and thermal hole 32, a diameter of 3cm of thermal trough 31, and thermal hole 32 then runs through substrate layer 3, a diameter of 1cm.Its both ends open lays respectively in the thermal trough 31 of substrate layer 3 upper and lower surface.Substrate side surface part between adjacent two thermal troughs 31 is provided with thermal conductive cavity 33, is provided with metallic supports 34 and semiconductor heating sheet 35 in thermal conductive cavity.Semiconductor heating sheet 35 include for heat absorption cold end 21, for heat radiation hot junction 22, the N-type semiconductor 23 being arranged between described cold end 21 and hot junction 22 and P-type semiconductor 24, connect described N-type semiconductor 23 and the metallic conductor 25 of described P-type semiconductor 24, power supply 26；Metallic conductor 25 is provided for electrically connecting the positive and negative electrode of described power supply 26；Described N-type semiconductor 23 arranges graphene layer 27, or described P-type semiconductor 24 arranges graphene layer 27, or described N-type semiconductor 23 and described P-type semiconductor 24 are respectively provided with graphene layer 27.
Claims (10)
1. an energy-saving quick heating type nanometer heating floor, it is characterized in that: described nanometer heating floor includes solid wood layer (1), the heat conducting nano dope layer (2) being coated in solid wood layer (1) upper surface and the substrate layer (3) with the laminating of solid wood layer (1) lower surface, and the upper and lower surface of described substrate layer (3) is equipped with thermal trough (31) and thermal hole (32).
2. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: described thermal hole (32) runs through substrate layer (3), and its both ends open lays respectively in the thermal trough (31) of substrate layer (3) upper and lower surface.
3. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: it is provided with the first cementing layer (4) between described solid wood layer (1) and substrate layer (3).
4. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: described substrate layer (3) lower surface is provided with the waterproofing membrane layer (5) fitted therewith.
5. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: it is provided with the second cementing layer (6) between described substrate layer (3) and waterproofing membrane layer (5).
6. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: the thickness of described substrate layer (3) is 4-8cm, a diameter of 1-3cm of thermal trough (31).
7. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: between adjacent two thermal holes (32) of described substrate layer, part is provided with thermal conductive cavity (33).
8. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: it is provided with metallic supports (34) and semiconductor heating sheet (35) in described thermal conductive cavity (33).
9. a kind of energy-saving quick heating type nanometer heating floor, it is characterised in that: described semiconductor heating sheet (35) includes the cold end (21) for heat absorption, the hot junction (22), the N-type semiconductor (23) being arranged between described cold end (21) and hot junction (22) and the P-type semiconductor (24) that are used for heat radiation, connects the metallic conductor (25) of described N-type semiconductor (23) and described P-type semiconductor (24), power supply (26)；Described metallic conductor (25) is provided for electrically connecting the positive and negative electrode of described power supply (26)；Described N-type semiconductor (23) arranges graphene layer (27), or described P-type semiconductor (24) arranges graphene layer (27), or described N-type semiconductor (53) and described P-type semiconductor (24) are respectively provided with graphene layer (27).
10. a kind of energy-saving quick heating type nanometer heating floor as described in any one of claim 1-9, it is characterised in that: described heat conducting nano dope layer (2) is lamellar graphite alkene heat conducting nano dope layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620108871.XU CN205654027U (en) | 2016-02-03 | 2016-02-03 | Energy -conserving fast fever type nanometer geothermal floor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620108871.XU CN205654027U (en) | 2016-02-03 | 2016-02-03 | Energy -conserving fast fever type nanometer geothermal floor |
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| CN205654027U true CN205654027U (en) | 2016-10-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107062686A (en) * | 2016-12-29 | 2017-08-18 | 清华大学 | A kind of modular radiation floor based on semiconductor heating |
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2016
- 2016-02-03 CN CN201620108871.XU patent/CN205654027U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107062686A (en) * | 2016-12-29 | 2017-08-18 | 清华大学 | A kind of modular radiation floor based on semiconductor heating |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201109 Address after: Room 701, building 23, sports community, Jinhu street, Ruian City, Wenzhou City, Zhejiang Province 325200 Patentee after: Xiang Yiming Address before: 313000 room 819, Nanxun science and technology pioneer garden, 666 Chaoyang Road, Nanxun Town, Nanxun District, Zhejiang, Huzhou Patentee before: HUZHOU XUNXI NANOMETER TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right |