CN205616787U - Optical fiber perform's manufacturing installation - Google Patents
Optical fiber perform's manufacturing installation Download PDFInfo
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- CN205616787U CN205616787U CN201620327642.7U CN201620327642U CN205616787U CN 205616787 U CN205616787 U CN 205616787U CN 201620327642 U CN201620327642 U CN 201620327642U CN 205616787 U CN205616787 U CN 205616787U
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- preform
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Abstract
The utility model provides an optical fiber perform's manufacturing installation, it includes: oxidation dehydration fritting furnace, lie in this fritting furnace the center tube, lie in this fritting furnace and lie in the outer at least heat -generating body of this center tube, lie in this center tube the siO2 body, be used for sealed this center tube the sealed cowling, lie in that this center tube is called the cavity, lie in that this center tube lies in just outward that the fritting furnace is called outer cavity, the vacuum -exhaust that is connected to this outer cavity manages and first trachea, the 2nd vacuum -exhaust that is connected to this fritting furnace manage and the second trachea, wherein, heat -generating body, siO2 body and sealed cowling all are located in the fritting furnace. The utility model discloses optical fiber perform's manufacturing installation through the taking off OH and remove C's method and oxidation dehydration fritting furnace of siO2 body, solves except that carbon and dehydration problem to obtain low C and low OH optical fiber perform, the improved backward centrifugal wind wheel is simple and reliable in structure.
Description
Technical field
This utility model belongs to optical communication technique, particularly relates to the manufacture device of a kind of preform.
Background technology
In the process for making of preform, commonly used Organic Ingredients (type siloxane) or carbonaceous gas
(CH4, CF4, freon etc.) reaction prepares preform base substrate, and the molecular weight gas of carbon raw material or carbon containing is the biggest
It is less susceptible to fully burn, therefore fires inconsumable carbon and easily remain in preform base substrate.
In preform base substrate, the carbon of residual is when high temperature sintering, with SiO2(silicon dioxide) reacts so that vitreous body
Interior siliconoxygen bond (Si-O) ruptures;The CO/CO2 that reaction generates easily forms bubble in vitreous body.Siliconoxygen bond
(Si-O) breaking bonds and intravitreous bubble will directly affect the intensity of optical fiber and the decay of optical signal.
In order to avoid the problem of above-mentioned existence, the depositing operation of preform manufacture should be carried out in the presence of excess of oxygen.
The general method using vacuum-sintering of sintering of large-scale optical fiber prefabricating stick, if logical in sintering furnace in sintering process
Enter oxidizing gas (such as Cl2And O2), will therefore oxide etch inside agglomerating plant.So not only reduce and set
Standby service life and sintering process will also result in the pollution of preform.
Chinese patent CN1076430A and CN1213650A is all disclosed in vaccum sintering device, and its heating and heat preservation member all use
Graphite material, it is impossible to use O2To SiO2Base substrate carries out carbon removal treatment;Meanwhile, Cl2And Cl2The HCl generated is reacted with OH
Also the service life of the corrosion equipment of graphite and metal material can be accelerated.
Chinese patent CN103771697A a kind of stoichiometric oxygen of announcement is compared the oxygen of excess in deposition process and can be led
Cause relatively low sedimentation rate, a kind of normal pressure-sintered mode that this patent uses uses Cl2Carry out being dehydrated not losing, for one
Preferably dewatering type.But being as the raising of the density of preform loose media, the gas molecule outside loose media is difficult
To enter inside loose media, the effect of dehydration also will decline;Meanwhile, the gas molecule within loose media is difficult to discharge, and holds
Easily stay preform and be internally formed bubble, affect the quality of preform.
Utility model content
The purpose of this utility model is to provide a kind of and solves de-carbon and dehydration problem, to obtain low C and low OH predispersed fiber
The manufacture device of the preform of system rod.
This utility model provides the manufacture device of a kind of preform, comprising: aoxidize dehydration-sintering furnace, be positioned at this burning
Central canal in freezing of a furnace, it is positioned at this sintering furnace and at least one heater being positioned at outside this central canal, is positioned at this central canal
SiO2Base substrate, for sealing the seal closure of this central canal, being positioned at this central canal referred to as inner chamber body, be positioned at this central canal
Outer and be positioned at sintering furnace referred to as outer chamber, the first Vacuum exhaust tube being connected to this outer chamber and the first trachea, be connected to
Second Vacuum exhaust tube of this sintering furnace and the second trachea, wherein, described heater, SiO2Base substrate and seal closure are equal
It is positioned at described sintering furnace.
Wherein, also include the first vacuum pump being connected on this first Vacuum exhaust tube and be connected to this second vacuum row
The second vacuum pump on trachea.
Wherein, described first vacuum pump and the second vacuum pump are respectively positioned on outside described outer chamber.
Wherein, also include the first pressure transducer being connected on this first trachea and be connected on this second trachea
Second pressure transducer.
Wherein, described first pressure transducer and the second pressure transducer are respectively positioned on outside described outer chamber.
Wherein, described heater is provided with 2, and these 2 heaters are positioned at described central canal outside.
The manufacture device of this utility model preform, the de-OH by SiO2 base substrate and the method except C and oxidation dehydration
Sintering furnace, solves de-carbon and dehydration problem, to obtain low C and low OH preform;This utility model simple in construction, can
Lean on.
Accompanying drawing explanation
Fig. 1 show the structural representation manufacturing device of this utility model preform;
Fig. 2 show the schematic flow sheet of the manufacture method of this utility model preform.
Figure number illustrates:
1-the first vacuum pump, 2-the first Vacuum exhaust tube, 3-the second pressure transducer, 4-the second trachea, 5-heater,
6-the second vacuum pump, 7-the second Vacuum exhaust tube, 8-the first pressure transducer, 9-the first trachea, 10-SiO2 base substrate,
11-aoxidizes dehydration-sintering furnace, 12-central canal, 13-inner chamber body, 14-seal closure, 15-outer chamber.
Detailed description of the invention
It is illustrated in figure 1 the structural representation manufacturing device of this utility model preform, this preform base substrate
The device that manufactures include that the transparency silica glass aoxidizing dehydration-sintering furnace 11, being positioned at this oxidation dehydration-sintering furnace 11 is made
Central canal 12, be positioned at the heater 5 of these central canal 12 both sides, be positioned at the SiO2 base substrate (dioxy of this central canal 12
SiClx idiosome) 10, for seal this central canal 12 seal closure 14, be positioned at this central canal 12 referred to as inner chamber body 12,
It is positioned at outside this central canal 12 and is positioned at sintering furnace 11 to be referred to as outer chamber 15, be connected to the first vacuum of this outer chamber 15
Exhaustor 2 and the first trachea 9, the first vacuum pump being connected on this first Vacuum exhaust tube 2 and being positioned at outside outer chamber 15
1, the first pressure transducer 8 of being connected on this first trachea 9 and be positioned at outside outer chamber 15, it is connected to this sintering furnace 11
The second Vacuum exhaust tube 7 and the second trachea 4, be connected on this second Vacuum exhaust tube 7 and be positioned at outside outer chamber 15
Second vacuum pump 6 and the second pressure transducer 3 being connected on this second trachea 4 and being positioned at outside outer chamber 15.Its
In, heater 5, SiO2 base substrate (silicon dioxide idiosome) 10 and seal closure 14 are respectively positioned in sintering furnace 11.
Wherein, central canal 12 can be by corrosion oxidation gas and the graphite piece in oxidation dehydration-sintering furnace 11, metal etc.
The parts being prone to oxidation are kept apart;Described heater 5 is provided with 2, and these 2 heaters are positioned at outside described central canal 12
Around, heater 5 is for heating the inner chamber body 13 of oxidation dehydration-sintering furnace 11;First Vacuum exhaust tube 2 is used
In outer chamber 15 vacuum exhaust, the first vacuum pump 1 is for outer chamber 15 evacuation;Second Vacuum exhaust tube 7 is for interior
Cavity 13 vacuum exhaust, the second vacuum pump 6 is for inner chamber body 13 evacuation;First trachea 9 is for outer chamber 15
Interior supply, the first pressure transducer 8 is for outer chamber 15 pressure monitoring, and the second trachea 4 is for supplying in inner chamber body 13
Gas, the second pressure transducer 3 is for inner chamber body 13 pressure monitoring.
In the oxidation dehydration of preform base substrate, use the first pressure transducer 8 monitoring outer chamber 15 pressure
With the second pressure transducer 3 of supervision inner chamber body 13 pressure, reach the pressure reduction inside and outside central monitoring position pipe 12, control with this
System is for due to the first vacuum pump 1 to outer chamber 15 evacuation and the second vacuum pump 6 for inner chamber body 13 evacuation
Vacuum pumping rate;Control for the first trachea 9 to outer chamber 15 ventilation with for the second of inner chamber body 13 ventilation
The flow of gas in trachea 4, carrys out the pressure that the pressure in control centre's pipe 12 is consistently lower than outside this central canal 12, and in
Pressure outside heart pipe 12 is 0-350pa, preferably 50-100pa with the pressure differential in central canal 12, to avoid Cl2And O2
Overflow in sintering furnace 11, thus avoid Cl2, HCl and O2Deng oxide etch gas to graphite piece and the oxygen of metal
Change corrosion.
The manufacture method of this preform, has following steps:
In the oxidation dehydration of preform base substrate, monitor the first pressure transducer 8 and the second pressure transducer 3,
Pressure differential inside and outside central monitoring position pipe 12, obtains the first vacuum pump 1 and vacuum pumping rate of the second vacuum pump 6.
Control the first trachea 9 to outer chamber 15 ventilate body flow, control the second trachea 4 and ventilate body to inner chamber body 13
Flow, keeps the pressure in central canal 12 to be consistently lower than the pressure outside this central canal 12.
As in figure 2 it is shown, the manufacture method of this preform, it comprises the steps:
The first step: be pointed to the SiO in central canal 122Base substrate 10 carries out application of vacuum: particularly, by SiO2Base substrate 10
Interior gas emptying.
Second step: under vacuum conditions, is passed through O in being passed through He gas, inner chamber body 13 in outer chamber 152Gas, Cl2
Gas and He gas, make SiO2Base substrate 10 fully adsorbs.
3rd step: add hot heater 5 so that SiO2The temperature of base substrate 10 is heated to the first preset temperature, SiO2Base substrate
C and O in 102Fully reaction.
4th step: continue to add hot heater 5 so that SiO2The temperature of base substrate 10 is heated to the second preset temperature, SiO2
OH and Cl in base substrate 102Fully reaction.
5th step: stop heater heating, to SiO2Base substrate 10 carries out application of vacuum, makes SiO by the second trachea 42
Gas in base substrate 10 is discharged.
6th step: continue to add hot heater 5 so that SiO2Base substrate 10 temperature is heated to the 3rd preset temperature, to SiO2
Base substrate carries out vitrification process, it is thus achieved that transparent low C, the preform of low OH.
Wherein, the first preset temperature is 800 DEG C;Second preset temperature is 1200 DEG C;3rd preset temperature is 1500 DEG C.
The manufacture method of this preform is compared with the manufacture method of existing fiber prefabricated rods, due to the technical scheme increased
Including: above-mentioned second step: be passed through in He gas, inner chamber body 13 to outer chamber respectively and be passed through O2, Cl2 and He gas;
Above-mentioned three or four step: make OH and Cl2 in SiO2 base substrate sufficiently react.
By such change, the manufacture method of above-mentioned preform is used to prepare low C, the preform of low OH.
This SiO2The manufacture method of base substrate 10, has a following three embodiment:
First embodiment: with CH4And O2For reacting gas and with SiCl4For raw material, obtain density by deposition process
0.4~0.8g/cm3SiO2Base substrate 10.
Second embodiment: with H2And O2For reacting gas and with OMCTS as raw material, obtain density by deposition process
0.4~0.8g/cm3SiO2Base substrate 10.
3rd embodiment: with CH4 and O2 as reacting gas and with OMCTS as raw material, obtains density by deposition process
0.4~0.8g/cm3SiO2 base substrate 10.
The SiO2 base substrate 10 prepared by above-mentioned three kinds of deposition process is placed among oxidation dehydration-sintering furnace 11, and covers sealing
Cover 14, the manufacture method of this preform also has three embodiments.
The first embodiment of the manufacture method of this preform: use manufacturer's legal system of SiO2 base substrate 10 first embodiment
Become SiO2Base substrate 10, the first of the manufacture method of this utility model preform, the particular content of the 3rd step to the 6th step
As follows:
Concretely comprising the following steps of the above-mentioned first step:
Step A1:SiO2 base substrate 10 is placed among sintering furnace 11, and covers seal closure 14.
Step A2: synchronize to reduce inner chamber body 13 and the pressure of outer chamber 15 so that inner chamber body 13 and outer chamber 15 are in vacuum
State, it may be assumed that the pressure in the pressure outside central canal 12 and this central canal 12 is 5pa, and (5pa is an absolute pressure, changes
Being counted as vacuum, 5pa is less than 0.1MPa, and being i.e. equivalent to absolute pressure is 0), and keep the first Preset Time.
This first Preset Time is 30min.
Concretely comprising the following steps of above-mentioned second step:
Step B1: under vacuum conditions, the first trachea 9 is passed through He gas to outer chamber 15, and the second trachea 4 is to inner chamber simultaneously
Body 13 is passed through the O of 3slm2Gas, the Cl of 2slm2The He gas of gas and 3slm, makes SiO2Base substrate 10 fully adsorbs.
Step B2: the pressure in outer chamber 15 outside the first pressure transducer 8 central monitoring position pipe 12, the second pressure passes simultaneously
The pressure in inner chamber body 12 in sensor 3 central monitoring position pipe 12, remains the pressure of outer chamber 15 and the pressure of inner chamber body 13
The pressure differential of power is more than the first preset pressure.
This first preset pressure is 5-250pa.
Step B3: when the pressure of inner chamber body 13 reaches the first preset pressure value, stops leading to inner chamber body 13 and outer chamber 15
Gas, keeps the second Preset Time, makes SiO2Base substrate 10 fully adsorbs.This first preset pressure value is 104pa;Second presets
Time is 90min.
The particular content of above-mentioned 3rd step is: add hot heater 5, presets the firing rate temperature by SiO2 base substrate 10 with first
Degree is heated to the first preset temperature, and keeps the 3rd Preset Time, makes SiO2C and O in base substrate 102Fully reaction.
First to preset firing rate be 3.5 DEG C/min for this;This first preset temperature is 800 DEG C;3rd Preset Time is
120min。
The particular content of above-mentioned 4th step is: continues to add hot heater 5, presets firing rate by SiO with second2Base substrate 10
Temperature be heated to the second preset temperature, make SiO2OH and Cl in base substrate 102Sufficiently reaction.
Second to preset firing rate be 10 DEG C/min for this;This second preset temperature is 1200 DEG C.
The particular content of above-mentioned 5th step is:
Step E1: synchronous averaging the first vacuum pump 1 and the second vacuum pump 6, the pressure making outer chamber 15 outside central canal 12 is big
The pressure of the inner chamber body 13 in central canal 12, and remain the pressure of the pressure of outer chamber 15 and the pressure of inner chamber body 13
Difference is more than the second preset pressure.
This second preset pressure is 50-100pa.
Step E2: synchronize to reduce inner chamber body 13 and the pressure of outer chamber 15 so that inner chamber body 13 and outer chamber 15 are in vacuum
State, it may be assumed that the pressure in the pressure outside central canal 12 and this central canal 12 is 5pa, and (5pa is an absolute pressure, changes
Being counted as vacuum, 5pa is less than 0.1MPa, and being i.e. equivalent to absolute pressure is 0), and keep the 3rd Preset Time.
3rd Preset Time is 120min.
The particular content of above-mentioned 6th step is:
Step F1: continue to add hot heater 5, preset firing rate by SiO with the 3rd2It is pre-that the temperature of base substrate 10 is heated to the 3rd
If temperature, keep the 4th Preset Time, make SiO2The abundant vitrification of base substrate 10.
3rd preset temperature is 1500 DEG C;3rd to preset firing rate be 5 DEG C/min;4th Preset Time is 20min.
Step F2:SiO2Base substrate 10 is preset cooling rate with the 4th and is down to the 4th preset temperature.
4th to preset cooling rate be 5 DEG C/min;4th preset temperature is 400 DEG C.
Step F3: the first trachea 9 is passed through N in outer chamber 152, the second trachea 4 is passed through N in inner chamber body 13 simultaneously2, protect
Hold the pressure outside the pressure that the pressure in central canal 12 is consistently lower than outside this central canal 12, and this central canal 12 and central canal 12
Within the pressure differential of interior pressure is the 3rd preset pressure.
3rd preset pressure is 250pa.
Step F4: when the pressure in inner chamber body 13 increases to 101kpa, by the SiO after vitrification2Base substrate 10 is removed,
Acquisition OH content is 0.6ppm and C content is the preform of 5ppm.
Prior art uses the manufacture method of this first embodiment preform, it is thus achieved that OH content is 143ppm (high-load)
With the preform that C content is 92ppm (high-load).
Second embodiment of the manufacture method of this utility model preform: use the system of SiO2 base substrate 10 second embodiment
The method of making makes SiO2 base substrate 10, and the second embodiment of the manufacture method of this utility model preform is real with above-mentioned first
The difference executing example is as follows:
Step B2: the pressure in outer chamber 15 outside the first pressure transducer 8 central monitoring position pipe 12, the second pressure passes simultaneously
The pressure in inner chamber body 12 in sensor 3 central monitoring position pipe 12, remains the pressure of outer chamber 15 and the pressure of inner chamber body 13
The pressure differential of power is more than the second preset pressure.That is: the pressure of outer chamber 15 is different from the pressure differential of the pressure of inner chamber body 13.
This second preset pressure is 50-100pa.
Step F4: when the pressure in inner chamber body 13 increases to 101kpa, removes the SiO2 base substrate 10 after vitrification,
Acquisition OH content is 1ppm and C content is the preform of 3ppm.That is: the OH content of preform is different with C content.
Prior art uses the manufacture method of this second embodiment preform, it is thus achieved that OH content is 164ppm (high-load)
With the preform that C content is 227ppm (high-load).
3rd embodiment of the manufacture method of this preform: use manufacturer's legal system of SiO2 base substrate 10 the 3rd embodiment
Become SiO2Base substrate 10, the 3rd embodiment of the manufacture method of this utility model preform and the district of above-mentioned first embodiment
As follows:
Step F4: when the pressure in inner chamber body 13 increases to four preset pressure, by the SiO after vitrification2Base substrate 10
Remove, it is thus achieved that OH content is 0.7ppm and C content is the preform of 8ppm.That is: the content of the OH of preform
Different with the content of C.
4th preset pressure is 101kpa.
Prior art uses the manufacture method of this third embodiment preform, it is thus achieved that OH content is 169ppm (high-load)
With the preform that C content is 261ppm (high-load).
The manufacture device of this utility model preform, the de-OH by SiO2 base substrate and the method except C and oxidation dehydration
Sintering furnace, solves de-carbon and dehydration problem, to obtain low C and low OH preform;This utility model simple in construction, can
Lean on.
Illustrating preferred embodiment of the present utility model above by reference to accompanying drawing, those skilled in the art are without departing from this utility model
Scope and spirit, multiple flexible program can be had to realize this utility model.For example, as the portion of an embodiment
The feature illustrating or describing is divided to can be used for another embodiment to obtain another embodiment.These are only that this utility model preferably may be used
The embodiment of row, not thereby limits to interest field of the present utility model, all utilization this utility model description and attached
The equivalence change that figure content is made, within being both contained in interest field of the present utility model.
Preferred implementation of the present utility model described in detail above, but this utility model is not limited to above-mentioned embodiment party
Detail in formula, in technology concept of the present utility model, can be carried out the technical solution of the utility model
Multiple equivalents, these equivalents belong to protection domain of the present utility model.
Claims (6)
1. the manufacture device of a preform, it is characterised in that comprising: aoxidize dehydration-sintering furnace, be positioned at this
Central canal in sintering furnace, it is positioned at this sintering furnace and at least one heater being positioned at outside this central canal, is positioned at this central canal
Interior SiO2Base substrate, for sealing the seal closure of this central canal, being positioned at this central canal referred to as inner chamber body, be positioned at this center
Pipe is outer and is positioned at sintering furnace referred to as outer chamber, the first Vacuum exhaust tube being connected to this outer chamber and the first trachea, connection
To the second Vacuum exhaust tube and second trachea of this sintering furnace, wherein, described heater, SiO2Base substrate and seal closure
It is respectively positioned in described sintering furnace.
The manufacture device of preform the most according to claim 1, it is characterised in that: also include being connected to this
The first vacuum pump on first Vacuum exhaust tube and be connected to the second vacuum pump on this second Vacuum exhaust tube.
The manufacture device of preform the most according to claim 2, it is characterised in that: described first vacuum pump
It is respectively positioned on outside described outer chamber with the second vacuum pump.
The manufacture device of preform the most according to claim 1, it is characterised in that: also include being connected to this
The first pressure transducer on first trachea and be connected to the second pressure transducer on this second trachea.
The manufacture device of preform the most according to claim 4, it is characterised in that: described first pressure passes
Sensor and the second pressure transducer are respectively positioned on outside described outer chamber.
The manufacture device of preform the most according to claim 1, it is characterised in that: described heater is provided with 2
Individual, these 2 heaters are positioned at described central canal outside.
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CN105669019A (en) * | 2016-04-19 | 2016-06-15 | 江苏亨通光导新材料有限公司 | Manufacturing device and manufacturing method of optical fiber preform rod |
CN108249751A (en) * | 2016-12-29 | 2018-07-06 | 中天科技精密材料有限公司 | Attemperator, optical fiber prefabricating sintering furnace and the method for preparing preform |
CN108845551A (en) * | 2018-09-03 | 2018-11-20 | 江苏亨通光导新材料有限公司 | A kind of control method of the glass preform without chlorine deshydroxy |
CN118598501A (en) * | 2024-08-08 | 2024-09-06 | 江苏亨通光导新材料有限公司 | Helium-free sintering device for low-water-peak optical fiber preform and application method thereof |
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2016
- 2016-04-19 CN CN201620327642.7U patent/CN205616787U/en active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105669019A (en) * | 2016-04-19 | 2016-06-15 | 江苏亨通光导新材料有限公司 | Manufacturing device and manufacturing method of optical fiber preform rod |
WO2017181649A1 (en) * | 2016-04-19 | 2017-10-26 | 江苏亨通光导新材料有限公司 | Manufacturing device and manufacturing method for optical fiber preform rod |
CN105669019B (en) * | 2016-04-19 | 2018-08-07 | 江苏亨通光导新材料有限公司 | The manufacturing device and its manufacturing method of preform |
CN108249751A (en) * | 2016-12-29 | 2018-07-06 | 中天科技精密材料有限公司 | Attemperator, optical fiber prefabricating sintering furnace and the method for preparing preform |
CN108845551A (en) * | 2018-09-03 | 2018-11-20 | 江苏亨通光导新材料有限公司 | A kind of control method of the glass preform without chlorine deshydroxy |
CN118598501A (en) * | 2024-08-08 | 2024-09-06 | 江苏亨通光导新材料有限公司 | Helium-free sintering device for low-water-peak optical fiber preform and application method thereof |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191111 Address after: 215200 south of Jintang Road, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu Co-patentee after: Jiangsu Hengtong Photoelectric Co., Ltd. Patentee after: JIANGSU HENGTONG PHOTOCONDUCTIVE NEW MATERIALS CO., LTD. Address before: 215200, No. 100, Heng Tong Road, Wujiang Economic Development Zone, Suzhou, Jiangsu Patentee before: JIANGSU HENGTONG PHOTOCONDUCTIVE NEW MATERIALS CO., LTD. |
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TR01 | Transfer of patent right |