CN205580591U - Wafer frequency testing arrangement - Google Patents

Wafer frequency testing arrangement Download PDF

Info

Publication number
CN205580591U
CN205580591U CN201620362589.4U CN201620362589U CN205580591U CN 205580591 U CN205580591 U CN 205580591U CN 201620362589 U CN201620362589 U CN 201620362589U CN 205580591 U CN205580591 U CN 205580591U
Authority
CN
China
Prior art keywords
wafer
frequency
metal
amplitude
sheet metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201620362589.4U
Other languages
Chinese (zh)
Inventor
陈仲涛
彭胜春
阳皓
杨莉
周哲
许卫群
唐平
陈映梅
刘春蓉
王洁
刘祖琴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 26 Research Institute
Original Assignee
CETC 26 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 26 Research Institute filed Critical CETC 26 Research Institute
Priority to CN201620362589.4U priority Critical patent/CN205580591U/en
Application granted granted Critical
Publication of CN205580591U publication Critical patent/CN205580591U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The utility model provides a wafer frequency testing arrangement, the device include metal probe, metal platform face, mount and frequency test instrument, and wherein elastic component connection mount is passed through on metal probe's top, and the bottom is provided with the sheetmetal parallel with the metal platform face, frequency test instrument is used for applying the alternating current power supply of different frequency to the metal platform face to under the alternating current power supply of different frequency, measure the amplitude of placing the wafer between sheetmetal and the metal platform face in, thus the amplitude -frequency curve of shape crystallization piece, with the resonant frequency who confirms the wafer according to the amplitude -frequency curve. Through the utility model discloses, can reduce the damage of wafer capability test in -process to the wafer to the degree of accuracy of wafer frequency test can improve.

Description

Wafer frequency testing device
Technical field
This utility model belongs to wafer and manufactures production technical field, is specifically related to a kind of wafer frequency test dress Put.
Background technology
Along with the development of electronics manufacturing, wafer is widely used in electronic manufacture, how to crystalline substance The performance of sheet is effectively tested, thus obtains qualified wafer and become problem of concern.At present, When the frequency performance of wafer is tested, general " contact " method of testing that uses, i.e. generally first First use two metal probes to push down wafer, then apply alternating current power supply, root respectively to two metal probes The humorous of wafer is determined with the amplitude of the combination of wafer according to two metal probes under different ac power frequencies Vibration frequency.But, wafer may be caused damage when two metal probes are pushed down wafer by the method, And it has been investigated that, the wafer resonant frequency that the method test draws is compared to wafer actual resonance frequency Relatively low, i.e. the accuracy of the wafer resonant frequency that the method test draws is relatively low.And use " air-gap " Method of testing, the metal probe of top leaves wafer surface a certain distance to sense the vibration of wafer, meeting Causing certain energy loss, the amplitude frequency curve response of test on frequency test instrument is more weak, and amplitude is Big corresponding Frequency point is inaccurate, can not accurately test out the resonant frequency of wafer.
Utility model content
This utility model provides a kind of wafer frequency testing device, to solve at present wafer is being carried out frequency Wafer and accuracy relatively low problem it is easily damaged during test.
First aspect according to this utility model embodiment, it is provided that a kind of wafer frequency testing device, including Metal probe, metal table top, fixed mount and frequency test instrument, the top of wherein said metal probe leads to Crossing elastic parts and connect described fixed mount, bottom is provided with the sheet metal parallel with described metal table top;
Described frequency test instrument is for applying difference successively between described metal table top and described sheet metal The alternating current power supply of frequency, and under the alternating current power supply of described different frequency, it is opposite to described sheet metal and institute The amplitude stating the wafer between metal table top measures, thus forms the amplitude frequency curve of described wafer, with The resonant frequency of described wafer is determined according to described amplitude frequency curve.
In the optional implementation of one, the frequency that in described amplitude frequency curve, amplitude peak is corresponding is The resonant frequency of described wafer.
In the optional implementation of another kind, the area of described sheet metal is humorous along with the expection of described wafer Vibration frequency, the increase of electromechanical coupling factor and reduce, reduce and institute along with the reduction of described wafer size State the sheet metal area area less than described wafer.
In the optional implementation of another kind, described metal probe uses threaded mode to be fixed on In described fixed mount.
In the optional implementation of another kind, the measurement end of described frequency test instrument and described elastic group In part, described metal probe and described sheet metal, any one is attached, to be opposite to described sheet metal And the amplitude of the wafer between described metal table top measures.
In the optional implementation of another kind, described frequency test instrument is at described different frequency Under alternating current power supply, it is opposite to the shaking of centered region of the wafer between described sheet metal and described metal table top Width measures.
The beneficial effects of the utility model are:
1, the metal of wafer frequency testing device medium frequency test instrunment pair of the present utility model and contact wafers The alternating current power supply of different frequency is applied successively, therefore at metal between sheet metal directly over table top and wafer Can form the AC field of different frequency between sheet and metal table top, wafer is in the AC field of different frequency Under can vibrate, be fixed on metal probe bottom additionally, due to sheet metal and metal probe top is passed through Elastic parts Connection Bracket, wafer can give metal probe one upwards at vibration processes Elastic assembly Pulling force, therefore can alleviate the impact that wafer is vibrated by metal probe and sheet metal, so that frequency test The amplitude that instrument test goes out can more accurately reflect the actual vibration situation of wafer, and then can carry The test accuracy of high wafer resonant frequency;Additionally, this utility model is by being fixed on metal by sheet metal Probe bottom and metal probe top by elastic parts Connection Bracket, can make wafer be placed in metal After between sheet and metal table top, sheet metal, wafer and metal table top each other can with good contact, but It is unlikely to again wafer is caused damage;
2, this utility model is by making the area expection resonant frequency along with wafer of sheet metal, mechanical-electric coupling The increase of coefficient and reduce, reduce along with the reduction of wafer size, the frequency test of wafer can be improved Accuracy;
3, this utility model is by making the area area less than wafer of sheet metal, can improve the frequency of wafer Rate test accuracy;
4, this utility model by metal probe is used threaded by the way of be fixed in fixed mount, can To facilitate tester to change metal according to expection resonant frequency, electromechanical coupling factor and the size of wafer Sheet, such that it is able to improve the scope of application of this wafer frequency testing device;
5, this utility model can reflect wafer Vibration Condition by being connected by the measurement end of frequency test instrument Elastic parts or metal probe or sheet metal, and indirect connection wafer, amplitude measurement mistake can be reduced The impact that wafer is vibrated by journey;
6, this utility model carries out frequency by being placed between sheet metal and metal table top by the centered region of wafer Rate is tested, and thus can improve the frequency test accuracy of wafer further.
Accompanying drawing explanation
Fig. 1 is an example structure figure of this utility model wafer frequency testing device.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in this utility model embodiment, And it is understandable to enable the above-mentioned purpose of this utility model embodiment, feature and advantage to become apparent from, knot below Close accompanying drawing technical scheme in this utility model embodiment is described in further detail.
In description of the present utility model, unless otherwise prescribed and limit, it should be noted that term " even Connect " should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be two element internals Connection, can be to be joined directly together, it is also possible to be indirectly connected to by intermediary, general for this area For logical technical staff, the concrete meaning of above-mentioned term can be understood as the case may be.
See Fig. 1, for an example structure figure of this utility model wafer frequency testing device.This crystalline substance Sheet frequency testing device can include that metal probe 110, metal table top 120, fixed mount 130 and frequency are surveyed Test instrument 140, wherein elastic parts 150 Connection Bracket 130 can be passed through in the top of metal probe 110, Top can be provided with the sheet metal 160 parallel with metal table top 120, and frequency test instrument 140 is permissible For to applying the alternating current power supply of different frequency between metal table top 120 and sheet metal 160 successively, and Under the alternating current power supply of different frequency, the wafer 170 being opposite between sheet metal 160 and metal table top 120 Amplitude measure, thus form the amplitude frequency curve of this wafer 170, to determine according to this amplitude frequency curve The resonant frequency of this wafer 170.
In the present embodiment, before testing the frequency characteristic of wafer, metal probe 110 top is even The elastic parts 150 connect may be at extended state, and the sheet metal 160 that metal probe 110 bottom connects (this distance preset can be less than corresponding wafer with there is default distance between metal table top 120 Design thickness).So, when wafer 170 is placed between sheet metal 160 and metal table top 120, Sheet metal 160, wafer 170 and metal table top 120 with good contact, but can be unlikely to each other Wafer 170 is caused damage.
When the frequency performance of wafer is tested, first wafer 170 can be placed in sheet metal 160 And between metal table top 120, then controlling frequency test instrument 140 provides different to metal table top 120 The alternating current power supply of frequency, and under the alternating current power supply of different frequency, the amplitude of this wafer 170 is surveyed Amount, thus form the amplitude frequency curve of this wafer 170.Hereafter, can be by the highest for amplitude in this amplitude frequency curve The frequency of some correspondence is as the resonant frequency of this wafer 170.After the resonant frequency determining wafer 170, May determine that the resonant frequency of wafer 170 that test draws whether in expection resonant frequency range, if so, Then represent that the resonant frequency of this wafer 170 meets requirement, otherwise, represent the resonant frequency of this wafer 170 It is unsatisfactory for requirement.
It has been investigated that, when the area of sheet metal is more than the area of wafer, wafer is being carried out frequency survey Be equivalent to increase the mass loading of wafer during examination, may cause testing the wafer resonant frequency drawn and be less than Actual wafer resonant frequency, thus cause the frequency test accuracy of wafer relatively low.Based on this, this reality With novel by making the area area less than wafer of sheet metal, the frequency test that can improve wafer is accurate Degree.
It has been investigated that, sheet metal of the same area for heterogeneous expectations resonant frequency, different materials and When various sizes of wafer carries out frequency test, frequency test accuracy is not quite similar.Generally along with wafer Expection resonant frequency, the increase of electromechanical coupling factor (can be used for characterize wafer material) and reduce metal Sheet area, then can improve the frequency test accuracy of wafer, and subtract along with the reduction of wafer size Lamellule area, it is also possible to improve the frequency test accuracy of wafer.In the present embodiment, metal is visited 110 can by use threaded in the way of be fixed in fixed mount 130, when each metal probe bottom During the sheet metal area difference arranged, different area can be changed in the way of using replacing metal probe Sheet metal.This utility model by metal probe is used threaded by the way of be fixed in fixed mount, Tester can be facilitated to change gold according to expection resonant frequency, electromechanical coupling factor and the size of wafer Belong to sheet, such that it is able to improve the scope of application of this wafer frequency testing device.
It addition, it has been investigated that, the resonant frequency of wafer centered region can preferably reflect whole wafer Resonant frequency, therefore this utility model is when carrying out frequency test to wafer, can be by wafer 170 Centered region is placed between sheet metal 160 and metal table top 120, thus can improve wafer further Frequency test accuracy.It is to be noted that above-mentioned elastic parts 150 can be spring, sponge etc., Owing to sheet metal 160 is by metal probe 110, elastic parts 150 Connection Bracket, wafer 170 exists Also sheet metal 160, metal probe 110 and elastic parts 150 can be driven while vibration to vibrate, Therefore frequency test instrument 140 is when measuring the amplitude of wafer, can be measured end with elastic In assembly 150, metal probe 110 and sheet metal 160, any one is attached.This utility model leads to Cross to connect the measurement end of frequency test instrument and can reflect that the elastic parts of wafer Vibration Condition or metal are visited Head or sheet metal, and indirect connection wafer, can reduce the impact that wafer is vibrated by amplitude measurement process.
As seen from the above-described embodiment, wafer frequency testing device medium frequency test instrunment pair of the present utility model Exchanging of different frequency is applied successively with between the sheet metal directly over the metal table top of contact wafers and wafer Power supply, therefore can form the AC field of different frequency between sheet metal and metal table top, and wafer is not Can vibrate under the AC field of same frequency, be fixed on metal probe bottom additionally, due to sheet metal and Elastic parts Connection Bracket is passed through on metal probe top, and wafer can give gold at vibration processes Elastic assembly Belong to and visit first pulling force upwards, therefore can alleviate the impact that wafer is vibrated by metal probe and sheet metal, So that the amplitude that frequency test instrument tests out can more accurately reflect the actual vibration feelings of wafer Condition, and then the test accuracy of wafer resonant frequency can be improved.Additionally, this utility model is by by gold Genus sheet is fixed on metal probe bottom and elastic parts Connection Bracket is passed through on metal probe top, can make Wafer is after being placed between sheet metal and metal table top, and sheet metal, wafer and metal table top each other may be used With good contact, but it is unlikely to wafer is caused damage.
Those skilled in the art, after considering description and putting into practice utility model disclosed herein, will easily think To other embodiment of the present utility model.The application is intended to any modification of the present utility model, use Way or adaptations, these modification, purposes or adaptations follow of the present utility model typically Property principle also includes the undocumented common knowledge in the art of this utility model or conventional techniques hands Section.Description and embodiments is considered only as exemplary, true scope of the present utility model and spirit by under The claim in face is pointed out.
It should be appreciated that this utility model is not limited to described above and illustrated in the accompanying drawings Precision architecture, and various modifications and changes can carried out without departing from the scope.Model of the present utility model Enclose and only limited by appended claim.

Claims (6)

1. a wafer frequency testing device, it is characterised in that include metal probe, metal table top, consolidate Determining frame and frequency test instrument, the top of wherein said metal probe connects described fixing by elastic parts Frame, bottom is provided with the sheet metal parallel with described metal table top;
Described frequency test instrument is for applying difference successively between described metal table top and described sheet metal The alternating current power supply of frequency, and under the alternating current power supply of described different frequency, it is opposite to described sheet metal and institute The amplitude stating the wafer between metal table top measures, thus forms the amplitude frequency curve of described wafer, with The resonant frequency of described wafer is determined according to described amplitude frequency curve.
Device the most according to claim 1, it is characterised in that in described amplitude frequency curve, amplitude is the highest The frequency that point is corresponding is the resonant frequency of described wafer.
Device the most according to claim 1, it is characterised in that the area of described sheet metal is along with institute State the expection resonant frequency of wafer, the increase of electromechanical coupling factor and reduce, along with described wafer size Reduce and reduce and described sheet metal area is less than the area of described wafer.
Device the most according to claim 1, it is characterised in that described metal probe uses screw thread even The mode connect is fixed in described fixed mount.
Device the most according to claim 1, it is characterised in that the measurement of described frequency test instrument In end and described elastic parts, described metal probe and described sheet metal, any one is attached, with right The amplitude being placed in the wafer between described sheet metal and described metal table top measures.
Device the most according to claim 1 or 5, it is characterised in that described frequency test instrument is used Under the alternating current power supply at described different frequency, it is opposite between described sheet metal and described metal table top The amplitude of the centered region of wafer measures.
CN201620362589.4U 2016-04-26 2016-04-26 Wafer frequency testing arrangement Active CN205580591U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620362589.4U CN205580591U (en) 2016-04-26 2016-04-26 Wafer frequency testing arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620362589.4U CN205580591U (en) 2016-04-26 2016-04-26 Wafer frequency testing arrangement

Publications (1)

Publication Number Publication Date
CN205580591U true CN205580591U (en) 2016-09-14

Family

ID=56861550

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201620362589.4U Active CN205580591U (en) 2016-04-26 2016-04-26 Wafer frequency testing arrangement

Country Status (1)

Country Link
CN (1) CN205580591U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105675120A (en) * 2016-04-26 2016-06-15 中国电子科技集团公司第二十六研究所 Wafer frequency test device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105675120A (en) * 2016-04-26 2016-06-15 中国电子科技集团公司第二十六研究所 Wafer frequency test device

Similar Documents

Publication Publication Date Title
US7912661B2 (en) Impedance analysis technique for frequency domain characterization of magnetoelastic sensor element by measuring steady-state vibration of element while undergoing constant sine-wave excitation
CN107014480A (en) Linear motor displacement amplitude detection method and detection means
CN203083519U (en) Non-contact silicon chip thickness and resistivity detection system
US10180382B2 (en) Viscoelasticity measurement method and viscoelasticity measurement device
CN205580591U (en) Wafer frequency testing arrangement
CN110849314B (en) Dynamic strain calibration method with continuously adjustable frequency
JPH0335613B2 (en)
CN105115858B (en) Viscometer based on electromechanical impedance method and detection method thereof
CN109490417A (en) A kind of metal material plane anisotropic supersonic detection method
CN110308061B (en) Method and system for measuring elastic modulus and density of material based on three-dimensional structure
CN112964242A (en) System and method for testing mechanical coupling error of quartz tuning fork gyroscope gauge head
CN105004633A (en) Nanowire vertical array based fluid viscosity detection device and detection method
CN105675120A (en) Wafer frequency test device
CN110441401A (en) Increasing material manufacturing material structure damped coefficient test method and device
CN105136335A (en) Polymer glass transition temperature measuring device and method based on tuning fork quartz crystal oscillator
CN109579976A (en) A kind of piezoelectric acceleration transducer sensitivity coefficient method of calibration
CN105588772B (en) A kind of pressure sensitive strain factor test device and its method of testing
CN105910530A (en) Wafer parallelism testing method
CN108802195B (en) Test device and method for measuring transverse wave velocity of core sample
Longbiao et al. Comparison between Methods for the Measurement of the d33 Constant of Piezoelectric Materials
Wooldridge et al. Vertical comb drive actuator for the measurement of piezoelectric coefficients in small-scale systems
JP2007071553A (en) Measuring method of thin film, measuring instrument of thin film and contact sensor used therein
CN110068437A (en) The method of calibration of electronic product vibration magnitude
Borozenets et al. Determination of the lower eigenfrequency of vibrations of a piezoelectric accelerometer
CN110057391B (en) Device and method for testing sensing performance of shear type piezoelectric sensor

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant