CN205564735U - Semiconductor wafer aluminium pressure welding point bonded structure - Google Patents
Semiconductor wafer aluminium pressure welding point bonded structure Download PDFInfo
- Publication number
- CN205564735U CN205564735U CN201620348433.0U CN201620348433U CN205564735U CN 205564735 U CN205564735 U CN 205564735U CN 201620348433 U CN201620348433 U CN 201620348433U CN 205564735 U CN205564735 U CN 205564735U
- Authority
- CN
- China
- Prior art keywords
- welding point
- pressure welding
- thickness
- aluminium
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
Abstract
The utility model discloses a semiconductor wafer aluminium pressure welding point bonded structure, include at least the bonded in aluminium lamination on the semiconductor wafer and set up in the outer metal dielectric layer of aluminium lamination, interior nickel dam and the palladium layer of outwards including is in proper order followed on the metal dielectric layer, is the thickness of nickel dam 3 5 mu m, is the thickness on palladium layer 0.1 0.3 mu m. The utility model discloses easily form intermetallic compound and the difficult ke ken of formation dare cavity on semiconductor single crystal circle aluminium pressure welding point.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly relates to a kind of semiconductor crystal wafer aluminium pressure welding point bonding structure.
Background technology
Wire bonding is technology more ripe in the connected mode of device and substrate in semicon industry, especially gold thread bonding techniques on aluminium pad.
But, the most conventional bonding techniques, due under high temperature applied environment (environment temperature is up to 150 ° of more than C), such as in fields such as oil/gas drilling, geothermal exploration and military aviations, gold-the Al intermetallic (Au-Al IMC) formed at bonding process at high temperature can fast-growth, easily form Kirkendall (Kirkendall) cavity, and then cause component failure, affect the reliability of product.According to ITRS route map, in the engine and automatic gear-box of Hyundai Motor, the environment temperature of its electronic device is up to 155 ~ 175 ° of C, and in individual case, temperature is up to 200 ° of C, therefore, the bonding pattern of gold-aluminium can not meet electronic device use requirement in high temperature environments.
Relative to gold thread; copper cash cost is relatively low; and copper cash has good electric conductivity and hot property; copper-aluminium (Cu-Al) is hardly formed intermetallic compound (IMC) in high temperature environments; once form intermetallic compound, its speed of growth at high temperature the most slowly, there is presently no observe due to formed Kirkendall (Kirkendall) cavity and cause the situation of component failure; therefore, use copper cash to substitute gold thread and have become as the technology that industry employing is more.
But, owing to being hardly formed IMC between Cu-Al, and the density of copper is more than the density of aluminium, bonding process needs bigger energy and bonding force, it is susceptible to the problem that aluminium pad overflows, in some instances it may even be possible to destroy sensitive under pressure welding point and the structure of fragility, cause the inefficacy of device.
Therefore, those skilled in the art need badly research a kind of be prone to semiconductor monocrystal circle aluminium pressure welding point on formed intermetallic compound and be not easily formed Kirkendall cavity bonding structure.
Utility model content
Because the drawbacks described above of prior art, the utility model provides a kind of being prone to and forms intermetallic compound in semiconductor monocrystal circle aluminium pressure welding point and be not easily formed the bonding structure in Kirkendall cavity.
For achieving the above object, the utility model provides a kind of semiconductor crystal wafer aluminium pressure welding point bonding structure, at least include the aluminium lamination being bonded on described semiconductor crystal wafer and be arranged at the metallic dielectric layer outside described aluminium lamination, it is characterized in that, described metallic dielectric layer includes nickel dam and palladium layers the most successively；The thickness of described nickel dam is 3-5 μm, and the thickness of described palladium layers is 0.1-0.3 μm.
In some embodiments, described metallic dielectric layer also includes that layer gold, described layer gold are bonded to the outside of described palladium layers, and the thickness of described layer gold is 0.03-0.1 μm.
In some embodiments, the thickness of described nickel dam is 4 μm.
In some embodiments, the thickness of described palladium layers is 0.2 μm.
In some embodiments, the thickness of described layer gold is 0.06 μm.
The beneficial effects of the utility model:
Said structure of the present utility model designs; owing to being provided with metallic dielectric layer between aluminium lamination (i.e. aluminium bonding face) and aluminum steel or gold thread; i.e. nickel dam, palladium layers and layer gold; metallic dielectric layer has been effectively isolated aluminium lamination and gold thread or copper cash; gold thread or copper cash is avoided directly to contact with aluminium lamination; and can will not form Kirkendall cavity by forming good joint between chemistry self-catalyzed reaction and gold thread or copper cash, aluminium bonding face and semiconductor crystal wafer thereof are played a very good protection.
Below with reference to accompanying drawing, the technique effect of design of the present utility model, concrete structure and generation is described further, to be fully understood from the purpose of this utility model, feature and effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model one embodiment；
Fig. 2 is that the window that is bonded of the present embodiment structure is bonded the comparison diagram of window with existing structure.
Detailed description of the invention
As illustrated in figs. 1 and 2, the utility model proposes a kind of semiconductor crystal wafer aluminium pressure welding point bonding structure, including the aluminium lamination 2 being bonded on semiconductor crystal wafer 1 and be arranged at the metallic dielectric layer outside aluminium lamination 2.In the present embodiment, with the side away from semiconductor crystal wafer as outer layer, it is internal layer near the side of semiconductor crystal wafer.
As it is shown in figure 1, metallic dielectric layer includes nickel dam 3, palladium layers 4 and layer gold 5 the most successively, wherein the thickness of nickel dam is 4 μm, and the thickness of palladium layers is 0.2 μm, and the thickness of layer gold is 0.06 μm.
Above-mentioned structure is used to design; owing to being provided with metallic dielectric layer between aluminium lamination (i.e. aluminium bonding face) and aluminum steel or gold thread; i.e. nickel dam, palladium layers and layer gold; metallic dielectric layer has been effectively isolated aluminium lamination and gold thread or copper cash; gold thread or copper cash is avoided directly to contact with aluminium lamination; and can will not form Kirkendall cavity by forming good joint between chemistry self-catalyzed reaction and gold thread or copper cash, aluminium bonding face and semiconductor crystal wafer thereof are played a very good protection.
Fig. 2 is the test result tested according to DOE (experimental design), A is the bonding technology window of Direct Bonding copper cash on aluminium lamination, B is the bonding technology window of Direct Bonding gold thread on aluminium lamination, C is the bonding technology window on the composition metal dielectric layer of the present embodiment after linking copper wire, relative to simple bonding on aluminium lamination, the metallic dielectric layer of the present embodiment has broader bonding technology window, substantially increases production efficiency.
In other embodiments, the thickness range of nickel dam can be between 3-5 μm, and the thickness range of palladium layers can be between 0.1-0.3 μm, and the thickness range of layer gold can be between 0.03-0.1 micron.
Concrete applicable cases of the present utility model is as follows: step one, cleans aluminium lamination.The impurity on cleaning aluminium lamination surface, keeps aluminium lamination cleaning；Step 2, aluminium lamination microetch.Remove the oxide layer on aluminium lamination, recover the activity of aluminium lamination；Step 3, for the first time leaching zinc.Cover the zinc layers of thin layer on aluminium lamination surface, prevent aluminium lamination from aoxidizing, keep the activity of aluminium lamination；Step 4, takes off and washes zinc layers.Remove the zinc layers on aluminium lamination surface；Step 5, second time leaching zinc, optimize zinc layers further, be allowed to be covered in the surface of aluminium lamination uniform and thinly；Step 6, chemical nickel plating, on aluminium lamination surface by chemistry self-catalyzed reaction, generate the nickel dam that thickness is 3～5 μm；Step 7, chemical palladium-plating, on nickel dam, deposit, by chemistry self-catalyzed reaction, the metal palladium layers that a layer thickness is 0.1～0.3 μm, prevent nickel dam from aoxidizing；Step 8, chemistry leaching gold.Palladium layers deposits the layer gold that a layer thickness is 0.03～0.1 μm, increases the solderability of metallic dielectric layer；Step 9, cleans metallic dielectric layer and is baked to.
Completed by chemistry self-catalyzed reaction completely between above-mentioned metallic dielectric layer, need not semiconductor wafer surface and process the PVD(coating machine generally used) and mask equipment (cleaning equipment), also without expensive electroplating device, while saving power cost and electroplating device cost, decrease the electroplating process pollution to environment, it is ensured that the wellness of staff's working environment.
Preferred embodiment of the present utility model described in detail above.Should be appreciated that those of ordinary skill in the art just can make many modifications and variations according to design of the present utility model without creative work.Therefore, all technical staff in the art pass through the available technical scheme of logical analysis, reasoning, or a limited experiment on the basis of existing technology according to design of the present utility model, all should be in the protection domain being defined in the patent claims.
Claims (5)
1. a semiconductor crystal wafer aluminium pressure welding point bonding structure, at least includes the aluminium lamination being bonded on described semiconductor crystal wafer and is arranged at the metallic dielectric layer outside described aluminium lamination, it is characterised in that described metallic dielectric layer includes nickel dam and palladium layers the most successively；The thickness of described nickel dam is 3-5 μm, and the thickness of described palladium layers is 0.1-0.3 μm.
2. semiconductor crystal wafer aluminium pressure welding point bonding structure as claimed in claim 1, it is characterised in that described metallic dielectric layer also includes that layer gold, described layer gold are bonded to the outside of described palladium layers, and the thickness of described layer gold is 0.03-0.1 μm.
3. semiconductor crystal wafer aluminium pressure welding point bonding structure as claimed in claim 2, it is characterised in that the thickness of described nickel dam is 4 μm.
4. semiconductor crystal wafer aluminium pressure welding point bonding structure as claimed in claim 3, it is characterised in that the thickness of described palladium layers is 0.2 μm.
5. semiconductor crystal wafer aluminium pressure welding point bonding structure as claimed in claim 4, it is characterised in that the thickness of described layer gold is 0.06 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620348433.0U CN205564735U (en) | 2016-04-22 | 2016-04-22 | Semiconductor wafer aluminium pressure welding point bonded structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620348433.0U CN205564735U (en) | 2016-04-22 | 2016-04-22 | Semiconductor wafer aluminium pressure welding point bonded structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205564735U true CN205564735U (en) | 2016-09-07 |
Family
ID=56807057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620348433.0U Active CN205564735U (en) | 2016-04-22 | 2016-04-22 | Semiconductor wafer aluminium pressure welding point bonded structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205564735U (en) |
-
2016
- 2016-04-22 CN CN201620348433.0U patent/CN205564735U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8716864B2 (en) | Solderless die attach to a direct bonded aluminum substrate | |
| CN101405863B (en) | Semiconductor devices and electrical parts manufacturing using metal coated wires | |
| CA1189748A (en) | Maskless coating of metallurgical features of a dielectric substrate | |
| JP5669780B2 (en) | Manufacturing method of semiconductor device | |
| CN105009295A (en) | Semiconductor device and manufacturing method for semiconductor device | |
| CN102738116A (en) | Electronic component-embeded board and method for manufacturing same | |
| JP5483906B2 (en) | Semiconductor device and manufacturing method thereof | |
| MX2013010443A (en) | Sheet assembly with aluminum based electrodes. | |
| CN102971840A (en) | Methods, devices, and materials for metallization | |
| KR20050118706A (en) | Integrated circuit die having a copper contact and method therefor | |
| CN102891131A (en) | Semiconductor substrate, package and device and manufacturing methods thereof | |
| CN104451797B (en) | The tin plating processing method of a kind of Tellurobismuthite. matrix and a kind of supplement | |
| TW200930183A (en) | Method of manufacturing printed circuit board and printed circuit board manufactured by the same | |
| CN101276730B (en) | Method of fabricating a semiconductor device employing electroless plating | |
| CN206022345U (en) | A kind of semiconductor structure with composite protection layer | |
| CN205564735U (en) | Semiconductor wafer aluminium pressure welding point bonded structure | |
| CN102723282A (en) | Etching-first and packaging-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit | |
| CN105027272A (en) | Semiconductor device | |
| CN102074487B (en) | Semiconductor assembly structure and forming method thereof | |
| CA2205966A1 (en) | Process for bonding wires to oxidation-sensitive metal substrates which can be soldered | |
| CN105575929A (en) | Electrical connection structure and preparation method thereof | |
| JP7170849B2 (en) | Semiconductor device and its manufacturing method | |
| Lee et al. | Analysis of Ni/Cu metallization to investigate an adhesive front contact for crystalline-silicon solar cells | |
| CN211879377U (en) | Device with a metal layer | |
| US20140308538A1 (en) | Surface treated aluminum foil for electronic circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Liu Yong Inventor before: Zhu Yong |