CN205535597U - Ultra -large -power near -infrared semiconductor laser illuminator - Google Patents
Ultra -large -power near -infrared semiconductor laser illuminator Download PDFInfo
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- CN205535597U CN205535597U CN201620062419.4U CN201620062419U CN205535597U CN 205535597 U CN205535597 U CN 205535597U CN 201620062419 U CN201620062419 U CN 201620062419U CN 205535597 U CN205535597 U CN 205535597U
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Abstract
The utility model discloses an ultra -large -power near -infrared semiconductor laser illuminator, including the main casing body and a plurality of laser instrument module, the laser instrument module comprises single bar strip semiconductor laser and the fixed radiator unit of laser instrument, single bar strip semiconductor laser is used for the lasing to restraint, single bar strip semiconductor laser's front end is provided with convergent lens, before the convergent lens, the rear end is provided with main reflector, secondary reflector, many laser beams are through main reflector reflection post -concentration in secondary reflector's surface, and restraint the laser beam into having good homogenizing effect through secondary reflector's reflection posteroclusion, the light -emitting angle that plastic mirror group adjusted the light beam satisfies lighting requirements. The utility model discloses a semiconductor laser illuminator, light beam that a plurality of laser instruments sent overlaps, has formed the overlapping laser that has better homogenizing effect, and a plurality of illuminator sizes of having brought when having solved last kilowatt of semiconductor laser ware pulse light -emitting are big, with high costs, aim at the problem of overlapping the difficulty, and beneficial effect is showing, is suitable for application promotion.
Description
Technical field
The present invention relates to a kind of semiconductor laser lighting, in particular, particularly relate to the super high power near-infrared semiconductor laser lighting of field of laser illumination.
Background technology
The most traditional laser night vision system, usually continuous illumination imaging system, affected by atmospheric backscatter, operating distance is usually no more than 3000 meters.Even if back scattering also can exist under the conditions of air quality is preferable, one is because in air always having steam and molecule existence, and two is that long distance illumination beam divergence angle is less, and three is that illumination is close together with imaging device.When long-distance night-vision illuminates, target in terms of lighting source position, the back scattering of light beam of light source is easy to be highlighted, and the back scattering at night especially having slight fog can be more serious.Owing to back scattering defines obvious light beam, substantially laser illuminated target cannot be observed.Under conditions of closely back scattering is more weak, the face feature of personage, dressing, the action of limbs etc. just can be captured by video camera clearly, thus beneficially night vision monitoring.
Owing to above-mentioned back scattering problem has a strong impact on the operating distance of continuous wave laser illumination night vision, and pulsed range gating laser night-vision device can fundamentally solve this problem.Gate pulse laser instrument will not be the highest due to dutycycle, it is desirable to peak power to go up kilowatt, generally uses green light solid laser to do illumination apparatus, and peak power is up to upper kilowatt.For laser night vision, it is seen that the laser easy exposure monitoring position of light, human eye is also had injury simultaneously, is not suitable for making laser night vision lighting source.
Laser night vision generally uses human eye invisible near-infrared semiconductor laser to make lighting source, and upper kilowatt high power semi-conductor pulse laser is generally abroad monopolized, and domestic there is no matured product.The domestic impulse semiconductor laser that can do usually two ways realizes, and one is that continuous wave laser does pulse use, usually optical fiber coupling output semiconductor laser, light power is maximum at about 100W, light spot homogenizing is preferable, and later stage shaping is convenient, and price is higher；Another kind is multiple bar bar output lasers, light power up to kilowatt more than, for laser night-vision device, owing to the light-emitting area of array bar bar semiconductor laser is relatively big, later stage shaping difficulty is relatively big, is difficult to use；The most single bar bar semiconductor laser that can use is proper, and cost performance is the highest.
Additionally, due to laser night vision equipment imaging and illumination apparatus generally together with, then have laser night vision for outdoor monopod carrying application, be typically only capable to add air-cooled form with fin and realize heat radiation.Which limits size and the heat-removal modalities of laser instrument.
Single bar bar laser instrument light power up to 2 hectowatts, the peak power that reach kilowatt, at least need 5 laser illuminators to meet.But owing to being independent illumination apparatus, can there is serious interference speckle phenomena, the most multiple illumination apparatuies take up room relatively big, additionally there is also bigger difficulty when hot spot overlap is debugged.
Summary of the invention
The present invention is for the shortcoming overcoming above-mentioned technical problem, it is provided that a kind of super high power near-infrared semiconductor laser lighting.
The super high power near-infrared semiconductor laser lighting of the present invention, it is particular in that: includes main casing and is arranged at multiple laser instrument modules that main casing is peripheral, laser instrument module is fixed radiating subassembly by single bar bar semiconductor laser with the laser instrument being secured to and is formed, single bar bar semiconductor laser is used for producing laser beam, the front end of each single bar bar semiconductor laser is provided with the collecting lens assembling its laser beam sent, the front end of collecting lens is provided with the principal reflection mirror reflecting laser beam, the laser beam foucing position of principal reflection mirror rear end is provided with secondary mirror, multi-stripe laser bundle reflects post-concentration in the surface of secondary mirror through principal reflection mirror, and close after the reflection of secondary mirror and to restraint into there is the laser beam well homogenizing effect；The front end of secondary mirror is provided with the shaping mirror group that the rising angle to laser beam is adjusted, to meet laser lighting requirement.
The super high power near-infrared semiconductor laser lighting of the present invention, the cylindrical mirror that its fast axle sending laser beam is carried out the compression of fast shaft angle degree it is provided with on described single bar bar semiconductor laser, by the regulation of fast shaft angle degree compression cylindrical mirror, the laser beam reshaping that single bar bar semiconductor laser sends is fast axle and square laser bundle that slow axis divergence angle is equal or approximately equal.
The super high power near-infrared semiconductor laser lighting of the present invention, the light emitting end surface of described single bar bar semiconductor laser is to the distance between collecting lens, meet image position relationship from collecting lens distance through principal reflection mirror to secondary mirror, the light emitting end surface of single bar bar semiconductor laser is object plane, and secondary mirror is image planes.
The super high power near-infrared semiconductor laser lighting of the present invention, the number of described laser instrument module is 5, main casing is positive hexagonal prism shape, and 5 laser instrument modules are arranged on 5 faces of main casing except the base remaining, and main casing offers the locating slot for fixed laser module；Seat fixed by the collecting lens that is fixedly arranged at the front end with of main casing, collecting lens is fixed the outer ring of seat and is offered the outer light hole of 5 fixing collecting lenses, inner ring offers the interior light hole that 5 light beams being easy to after principal reflection mirror reflects pass through, and center offers and is easy to the center light hole that the light beam after secondary mirror reflects passes through.
The super high power near-infrared semiconductor laser lighting of the present invention, described collecting lens is fixed the principal reflection mirror that is fixedly arranged at the front end with of seat and is fixed seat, the rear end of main casing is fixed with secondary mirror and fixes seat, principal reflection mirror, secondary mirror are front-surface mirror, and the central authorities of principal reflection mirror offer is easy to the through hole that the light beam after secondary mirror reflects passes through；What principal reflection mirror fixed seat is fixedly arranged at the front end with lens barrel, shaping mirror group is arranged on lens barrel, shaping mirror group is made up of lens one, lens two and the lens three being sequentially arranged along laser beam injection direction, lens one and lens two are negative power spectacle lenses, for laser beam is dissipated further, lens three are positive diopter lens, assemble light beam, make laser beam be formed and assemble or collimated light beam injection.
The super high power near-infrared semiconductor laser lighting of the present invention, described laser instrument is fixed and is fixed with radiator fan at the radiating ribs of radiating subassembly, the fixed groove being provided with fixing single bar bar semiconductor laser on radiating subassembly fixed by laser instrument, and single front side of bar bar semiconductor laser, upside are respectively fixed with front glass cover plate and upper glass cover-plate.
The invention has the beneficial effects as follows: the semiconductor laser lighting of the present invention, the laser beam sent multiple single bar bar semiconductor lasers first with collecting lens is assembled, then the reflection post-concentration of multi-stripe laser Shu Zaijing principal reflection mirror is in secondary mirror, make multi-stripe laser bundle overlapping after the reflection of secondary mirror, define and there is the laser beam well homogenizing effect, after the process of the last shaped mirror group of laser beam, form rising angle and meet the laser illuminator of requirement.The semiconductor laser lighting of the present invention, single bar bar laser array of 5 more than 200 watts power can be combined, ultimately form the power laser illuminator more than 1000 watts, meet the requirement of high power laser illumination, it is easy to obtain iraser image clearly.
The semiconductor laser lighting of the present invention, the light beam finally making multiple laser instrument send is overlapping, has dark stricture of vagina, the effect of speckle in light beam between mutually making up each, defines and have the overlapping laser preferably homogenizing effect；Owing to overlapping light beam only realizes beam angle control by one group of shaping mirror group, effectively solve the problem that the multiple illumination apparatus sizes brought when kilowatt semiconductor laser pulse goes out light are big, cost is high, alignment overlap is difficult, beneficial effect is notable, is suitable to application.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the near-infrared semiconductor laser lighting of the present invention；
Fig. 2 is the structural blast figure of the near-infrared semiconductor laser lighting of the present invention；
Fig. 3 is the structural representation of laser module in the present invention；
Fig. 4 is the structure chart of the near-infrared semiconductor laser lighting of the present invention；
Fig. 5 is the sectional view of the near-infrared semiconductor laser lighting of the present invention.
nullIn figure: 1 laser instrument module one，2 laser instrument modules two，3 laser instrument modules three，4 laser instrument modules four，5 laser instrument modules five，6 single bar bar semiconductor lasers，Radiating subassembly fixed by 7 laser instrument，8 front glass cover plates，Glass cover-plate on 9，10 radiator fans，11 collecting lenses one，12 collecting lenses two，13 collecting lenses three，14 collecting lenses four，15 collecting lenses five，16 main casings，Seat fixed by 17 collecting lenses，18 principal reflection mirrors，19 secondary mirror，20 secondary mirror fix seat，21 collecting lens one trim rings，22 collecting lens two trim rings，23 collecting lens three trim rings，24 collecting lens four trim rings，25 collecting lens five trim rings，26 principal reflection mirrors fix seat，27 lens barrels，28 lens one，29 lens one trim rings，30 lens two，31 lens two trim rings，32 lens three，Seat fixed by 33 lens three，34 lens three trim rings，35 illumination apparatuies fix seat，36 shaping mirror groups，37 fast shaft angle degree compression cylindrical mirrors，38 outer light holes，Light hole in 39，40 center light holes，41 collecting lenses，42 locating slots.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, sets forth schematic diagram and the explosive view of the near-infrared semiconductor laser lighting of the present invention, Fig. 5 gives its sectional view, shown near-infrared semiconductor laser lighting is made up of 16,5 laser instrument modules of main casing, collecting lens 14, principal reflection mirror 18, secondary mirror 19 and shaping mirror group 36, shown main casing 16 is positive hexagonal prism shape, the surface of the lower side of main casing 16 and illumination apparatus are fixed seat 35 and are fixed, and remaining 5 face offers the locating slot 42 for fixed laser module；5 laser die groups are respectively laser instrument module 1, laser instrument module 22, laser instrument module 33, laser instrument module 44 and laser instrument module 55.As shown in Figure 4, it can be seen that 5 laser instrument modules be fixed on main casing 16 after structural representation.
Fig. 3 gives the structural representation of laser instrument module, shown laser instrument module is fixed heat radiation group 7, single bar bar semiconductor laser 6, fast shaft angle degree compression cylindrical mirror 37 and radiator fan 10 by laser instrument and is formed, the groove being provided with fixing single bar bar semiconductor laser 6 in heat radiation group 7 fixed by laser instrument, and radiator fan 10 is fixed on laser instrument to be fixed at the radiating ribs of heat radiation group 7.Single front side of bar bar semiconductor laser 6, upside are respectively fixed with front glass cover plate 8, upper glass cover-plate 9, to realize the sealing to single bar bar semiconductor laser 6 and protective effect.The direction of the square beam of light that 5 single bar bar semiconductor lasers 6 are sent is consistent, all along the axis direction of main casing 16.
The fast axle of semiconductor laser, is also called vertical divergence angle, is the angle opened in vertical PN junctions direction of the luminous zone of semiconductor laser, typically at 15 °～about 40 °.The slow axis of semiconductor laser, is also called horizontal divergence angle, is the angle opened of luminous zone and the PN junction parallel direction of semiconductor laser, typically at 6 °～10 °.If the rectangular light spot that single bar bar semiconductor laser 6 rising angle is 8 ° × 40 °, slow axis 8 °, 40 ° of fast axle.It is compressed processing by fast shaft angle degree through too fast shaft angle degree compression cylindrical mirror 37 so that it is fast axis divergence angle approximates with slow axis angle.Therefore the laser cross section of laser instrument module outgoing is approximately square, and square beam of light is easy to the convergence compression of collecting lens 41, it is achieved the convergence of beam angle.
Seat 17 fixed by the collecting lens that is fixedly arranged at the front end with of single bar bar semiconductor laser 6, collecting lens is fixed the periphery of seat 17 and is offered 5 outer light holes 38,5 collecting lenses (collecting lens 1, collecting lens 2 12, collecting lens 3 13, collecting lens 4 14, collecting lens 5 15) are individually fixed in 5 outer light holes 38, and are fixed by 5 collecting lens trim rings (collecting lens one trim ring 21, collecting lens two trim ring 22, collecting lens three trim ring 23, collecting lens four trim ring 24, collecting lens five trim ring 25).After the concentrated lens of square beam of light that single bar bar semiconductor laser 6 sends, the divergence characterization of light beam is changed into convergence characteristics.
Collecting lens is fixed the principal reflection mirror that is fixedly arranged at the front end with of seat 17 and is fixed seat 26, collecting lens is fixed and is fixed with secondary mirror on the main casing 16 of seat 17 rear end and fixes seat 20, and principal reflection mirror 18, secondary mirror 19 are individually fixed in that principal reflection mirror fixes seat 26, secondary mirror is fixed on seat 20.Principal reflection mirror 18 and secondary mirror 19 are front-surface mirror, and secondary mirror 19 is positioned at the focal position of principal reflection mirror 18, so that the laser beam after principal reflection mirror 18 reflects converges in secondary mirror 19.Light beam overlap after the reflection of secondary mirror 19 is light beam, by dark in light beam between mutually making up each stricture of vagina, speckle effect, can be formed and have the laser beam well homogenizing effect.
What principal reflection mirror fixed seat 26 is fixedly arranged at the front end with lens barrel 27, and shaping mirror group 36 is arranged on lens barrel 27.Lens 1, lens 2 30 and lens 3 32 that shaping mirror group 36 is sequentially arranged by the exit direction along laser beam form, and lens 1, lens 2 30 are fixed on the rear end of lens barrel 27 respectively by lens one trim ring 29, lens two trim ring 31；Seat 33 fixed by the lens three that are fixedly arranged at the front end with of lens barrel 27, and lens 3 32 are fixed on lens three by lens three trim ring 34 to be fixed on seat 33.Lens 1, lens 2 30 are for having negative dioptric lens, and lens 3 32 are the lens with positive diopter；The light beam reflected through secondary mirror 19 dissipates further through lens 1, lens 2 30, and lens 3 32 realize the converging action to light beam, in order to be adjusted the rising angle of light beam.
The operation principle of the semiconductor laser lighting of the present invention: the single bar bar semiconductor laser 6 in 5 laser instrument modules sends laser beam in same direction, the convergence of the most concentrated lens of laser beam processes, and change divergence characterization is convergence characteristics；Then laser beam is reflected by principal reflection mirror 18,5 laser beams are made to converge at the surface of secondary mirror 19,5 light beam overlaps are made after the reflection of secondary mirror 19, due to single fast axle of the sent out laser beam of bar bar semiconductor laser 6, slow-axis direction difference, make it have dark stricture of vagina, the effect of speckle in light beam between mutually making up each, define and there is the overlapping laser preferably homogenizing effect；The rising angle of laser beam is adjusted by last shaping mirror group so that it is meet laser lighting imaging requirements.
Claims (6)
- null1. a super high power near-infrared semiconductor laser lighting，It is characterized in that: include main casing (16) and be arranged at multiple laser instrument modules that main casing is peripheral，Laser instrument module is fixed radiating subassembly (7) by single bar bar semiconductor laser (6) and the laser instrument that is secured to and is formed，Single bar bar semiconductor laser is used for producing laser beam，The front end of each single bar bar semiconductor laser is provided with the collecting lens (14) assembling its laser beam sent，The front end of collecting lens is provided with the principal reflection mirror (18) reflecting laser beam，The laser beam foucing position of principal reflection mirror rear end is provided with secondary mirror (19)，Multi-stripe laser bundle reflects post-concentration in the surface of secondary mirror through principal reflection mirror，And close after the reflection of secondary mirror and to restraint into there is the laser beam well homogenizing effect；The front end of secondary mirror is provided with the shaping mirror group that the rising angle to laser beam is adjusted, to meet laser lighting requirement.
- Super high power near-infrared semiconductor laser lighting the most according to claim 1, it is characterized in that: on described single bar bar semiconductor laser (6), be provided with the cylindrical mirror (37) that its fast axle sending laser beam is carried out the compression of fast shaft angle degree, by the regulation of fast shaft angle degree compression cylindrical mirror, the laser beam reshaping that single bar bar semiconductor laser sends is fast axle and square laser bundle that slow axis divergence angle is equal or approximately equal.
- Super high power near-infrared semiconductor laser lighting the most according to claim 1 and 2, it is characterized in that: distance between the light emitting end surface of described single bar bar semiconductor laser (6) to collecting lens (41), meet image position relationship from collecting lens distance through principal reflection mirror (18) to secondary mirror (19), the light emitting end surface of single bar bar semiconductor laser is object plane, and secondary mirror is image planes.
- Super high power near-infrared semiconductor laser lighting the most according to claim 1 and 2, it is characterized in that: the number of described laser instrument module is 5, main casing (16) is positive hexagonal prism shape, 5 laser instrument modules are arranged on 5 faces of main casing except the base remaining, and main casing offers the locating slot (42) for fixed laser module；Seat (17) fixed by the collecting lens that is fixedly arranged at the front end with of main casing, collecting lens is fixed the outer ring of seat and is offered the outer light hole (38) of 5 fixing collecting lenses, inner ring offers the interior light hole (39) that 5 light beams being easy to after principal reflection mirror (18) reflects pass through, and center offers and is easy to the center light hole (40) that the light beam after secondary mirror (19) reflects passes through.
- Super high power near-infrared semiconductor laser lighting the most according to claim 4, it is characterized in that: described collecting lens is fixed the principal reflection mirror that is fixedly arranged at the front end with of seat (17) and fixed seat (26), the rear end of main casing (16) is fixed with secondary mirror and fixes seat (20), principal reflection mirror (18), secondary mirror (19) are front-surface mirror, and the central authorities of principal reflection mirror offer is easy to the through hole that the light beam after secondary mirror reflects passes through；What principal reflection mirror fixed seat is fixedly arranged at the front end with lens barrel (27), shaping mirror group is arranged on lens barrel, shaping mirror group is made up of lens one (28), lens two (30) and the lens three (32) being sequentially arranged along laser beam injection direction, lens one and lens two are negative power spectacle lenses, for laser beam is dissipated further, lens three are positive diopter lens, assemble light beam, make laser beam be formed and assemble or collimated light beam injection.
- Super high power near-infrared semiconductor laser lighting the most according to claim 1 and 2, it is characterized in that: described laser instrument is fixed and is fixed with radiator fan (10) at the radiating ribs of radiating subassembly (7), the fixed groove being provided with fixing single bar bar semiconductor laser (6) on radiating subassembly fixed by laser instrument, and single front side of bar bar semiconductor laser, upside are respectively fixed with front glass cover plate (8) and upper glass cover-plate (9).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620062419.4U CN205535597U (en) | 2016-01-22 | 2016-01-22 | Ultra -large -power near -infrared semiconductor laser illuminator |
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| CN201620062419.4U CN205535597U (en) | 2016-01-22 | 2016-01-22 | Ultra -large -power near -infrared semiconductor laser illuminator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105627253A (en) * | 2016-01-22 | 2016-06-01 | 山东神戎电子股份有限公司 | Ultrahigh-power near-infrared semiconductor laser illuminator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105627253A (en) * | 2016-01-22 | 2016-06-01 | 山东神戎电子股份有限公司 | Ultrahigh-power near-infrared semiconductor laser illuminator |
| CN105627253B (en) * | 2016-01-22 | 2018-11-30 | 山东神戎电子股份有限公司 | A kind of super high power near-infrared semiconductor laser lighting |
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