CN205510403U - MEMS microphone chip and MEMS microphone - Google Patents
MEMS microphone chip and MEMS microphone Download PDFInfo
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- CN205510403U CN205510403U CN201620072017.2U CN201620072017U CN205510403U CN 205510403 U CN205510403 U CN 205510403U CN 201620072017 U CN201620072017 U CN 201620072017U CN 205510403 U CN205510403 U CN 205510403U
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- vibrating diaphragm
- pole plate
- back pole
- conductive layer
- mems microphone
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- 239000000758 substrate Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
The utility model relates to a MEMS microphone chip and MEMS microphone, the second electric capacity structural formation of first electric capacity structure that vibrating diaphragm and a back electrode plate constitute, vibrating diaphragm and the 2nd back electrode plate component difference electric capacity structure, be provided with the first spacing portion that is used for limiting a vibrating diaphragm orientation back electrode plate direction distortion between a back electrode plate and the vibrating diaphragm, be provided with the spacing portion of second that is used for limiting the 2nd back electrode plate direction distortion of vibrating diaphragm orientation between the 2nd back electrode plate and the vibrating diaphragm. The utility model discloses a MEMS microphone chip, pass through the vibrating diaphragm, a back electrode plate, the 2nd back electrode plate has constituted difference electric capacity structure, first spacing portion through lieing in between a back electrode plate and the vibrating diaphragm can prevent that a vibrating diaphragm and the back electrode plate from taking place the problem of adhesion or short circuit, the spacing portion of second through lieing in between the 2nd back electrode plate and the vibrating diaphragm can prevent that vibrating diaphragm and the 2nd back electrode plate from taking place the problem of adhesion or short circuit, when guaranteeing the conversion of MEMS microphone chip acoustic -electric, the performance of MEMS microphone has been improved.
Description
Technical field
This utility model relates to a kind of microphone chip, belongs to acoustic-electric conversion art, more specifically, relate to
And the MEMS microphone chip of a kind of differential type；This utility model further relates to the MEMS of a kind of differential type
Mike.
Background technology
MEMS (Micro Electro Mechanical System) mike is the mike manufactured based on MEMS technology, wherein
Vibrating diaphragm, back pole plate be the vitals in MEMS microphone, vibrating diaphragm, back pole plate constitute capacitor
And integrated on silicon, it is achieved the conversion of acoustic-electric.
At present, MEMS microphone is many to be made up of a sensing vibrating diaphragm and a rigidity backplane, this wheat
The linearity of gram wind is relatively low, and harmonic distortion is bigger.And sense vibrating diaphragm vibration when, or
The when of carrying out drop test, the problem that vibrating diaphragm and backplane adhesion often occur, and then affect MEMS
The performance of mike.
Utility model content
A purpose of the present utility model there is provided a kind of MEMS microphone chip.
According to an aspect of the present utility model, it is provided that a kind of MEMS microphone chip, including having
The back of the body chamber substrate, and be arranged on substrate the first back pole plate, vibrating diaphragm, the second back pole plate, wherein
The first capacitance structure, described vibrating diaphragm and the second back pole plate that described vibrating diaphragm and the first back pole plate are constituted are constituted
The second capacitance structure define differential capacitance structure；
Described first back pole plate includes the first non-conductive layer, and is arranged on the first non-conductive layer adjacent to shaking
First conductive layer of film side；It is provided with for limiting vibrating diaphragm between described first back pole plate and vibrating diaphragm
The first limiting section towards the first back pole plate Direction distortion；
Described second back pole plate includes the second non-conductive layer, and is arranged on the second non-conductive layer adjacent to shaking
Second conductive layer of film side；It is provided with for limiting vibrating diaphragm between described second back pole plate and vibrating diaphragm
The second limiting section towards the second back pole plate Direction distortion.
Preferably, described first limiting section is arranged on the first non-conductive layer, and described first limiting section
Extend through described first conductive layer and to the direction of vibrating diaphragm.
Preferably, described first limiting section is arranged on vibrating diaphragm the side of neighbouring first back pole plate, described
It is provided with the first corresponding position of limiting section on first conductive layer and multiple first non-conductive layer to be exposed
Through hole.
Preferably, described first limiting section is structure as a whole with vibrating diaphragm.
Preferably, described second limiting section is arranged on the second non-conductive layer, and described second limiting section
Extend through described second conductive layer and to the direction of vibrating diaphragm.
Preferably, described second limiting section and the second non-conductive layer are structure as a whole.
Preferably, described second limiting section is arranged on vibrating diaphragm the side of neighbouring second back pole plate, described
It is provided with the second corresponding position of limiting section on second conductive layer and multiple second non-conductive layer to be exposed
Through hole.
Preferably, described first back pole plate is positioned at the lower section of vibrating diaphragm；Described second back pole plate is positioned at vibrating diaphragm
Top.
Preferably, described first back pole plate is supported on substrate by the first supporting part, and described vibrating diaphragm leads to
Crossing the second supporting part to be supported on the first back pole plate, described second back pole plate is supported by the 3rd supporting part
On vibrating diaphragm.
This practicality is novel additionally provides a kind of MEMS microphone, and it includes above-mentioned MEMS microphone
Chip.
MEMS microphone chip of the present utility model, by vibrating diaphragm, the first back pole plate, the second backplane
Plate constitutes differential capacitance structure, can by the first limiting section between the first back pole plate and vibrating diaphragm
To prevent vibrating diaphragm and the first back pole plate from sticking together or the problem of short circuit, by be positioned at the second back pole plate with
The second limiting section between vibrating diaphragm is possible to prevent vibrating diaphragm and the second back pole plate to stick together or the problem of short circuit,
While ensureing the conversion of MEMS microphone chip acoustic-electric, improve the performance of MEMS microphone；And
First back pole plate, the second back pole plate contain respectively can with vibrating diaphragm produce effective capacitance conductive layer,
And thus can not can reduce the parasitism of MEMS microphone chip with the non-conductive layer of vibrating diaphragm generation electric capacity
Electric capacity, improves the sensitivity of MEMS microphone chip.
By detailed description to exemplary embodiment of the present utility model referring to the drawings, this practicality
Novel further feature and advantage thereof will be made apparent from.
Accompanying drawing explanation
The accompanying drawing of the part constituting description describes embodiment of the present utility model, and together with saying
Bright book is used for explaining principle of the present utility model together.
Fig. 1 is the structural representation of this utility model MEMS microphone chip.
Detailed description of the invention
Various exemplary embodiment of the present utility model is described in detail now with reference to accompanying drawing.It should be noted that
Arrive: unless specifically stated otherwise, the relative cloth of the parts illustrated the most in these embodiments and step
Put, numerical expression and numerical value are not intended to scope of the present utility model.
Description only actually at least one exemplary embodiment is illustrative below, never makees
For to this utility model and application thereof or any restriction of use.
May be not discussed in detail for technology and equipment known to person of ordinary skill in the relevant, but
In the appropriate case, described technology and equipment should be considered a part for description.
Shown here with in all examples discussed, any occurrence should be construed as merely example
Property rather than as limit.Therefore, other example of exemplary embodiment can have different
Value.
It should also be noted that similar label and letter represent similar terms, therefore, one in following accompanying drawing
A certain Xiang Yi the accompanying drawing of denier is defined, then need not it is carried out further in accompanying drawing subsequently
Discuss.
With reference to Fig. 1, this utility model provides a kind of MEMS microphone chip, and it includes substrate 1,
And the first back pole plate on substrate 1, vibrating diaphragm the 6, second back pole plate are set.Described substrate 1 has
Having back of the body chamber 1a, the first back pole plate can be supported on substrate 1 by the first supporting part 2, and the first backplane
The central region of plate is suspended at substrate 1 and carries on the back the top of chamber 1a；Described vibrating diaphragm 6 can pass through the second supporting part
3 are supported on the first back pole plate, and the second back pole plate can be supported on vibrating diaphragm 6 by the 3rd supporting part 4.
Described second back pole plate is additionally provided with multiple through hole, in order to extraneous sound can be through from this
Hole enters and acts on vibrating diaphragm 6；Certainly, described first back pole plate can also arrange multiple gas
Pressure via, this belongs to the common knowledge of those skilled in the art, no longer illustrates at this.
First supporting part the 2, second supporting part the 3, the 3rd supporting part 4 of the present utility model all uses absolutely
The material of edge, by the second supporting part 3 make to have between vibrating diaphragm 6 and the first back pole plate certain away from
From, described vibrating diaphragm 6 and the first back pole plate constitute the first capacitance structure of MEMS microphone chip；Logical
Cross the 3rd supporting part 4 and make to have between vibrating diaphragm 6 and the second back pole plate a certain distance, described vibrating diaphragm
6 and second back pole plate constitute the second capacitance structure of MEMS microphone chip.This first capacitance structure,
Second capacitance structure shares a vibrating diaphragm 6, so that described first capacitance structure, the second capacitance structure
May be constructed differential capacitance structure, thus the performance of MEMS microphone chip can be improved.
Needing at this to point out, in above-described embodiment, described first back pole plate is positioned at vibrating diaphragm 6
Lower section, described second back pole plate is positioned at the top of vibrating diaphragm 6.For a person skilled in the art,
First back pole plate can also be arranged on the top of vibrating diaphragm 6, the second back pole plate is arranged on vibrating diaphragm 6
Lower section, both set-up modes all can realize identical effect, no longer illustrate at this.
In one specific embodiment of this utility model, described first back pole plate includes that first non-leads
Electric layer 5, and it is arranged on first non-conductive layer 5, first conductive layer 9 adjacent to vibrating diaphragm 6 side；This is years old
One non-conductive layer 5 can be arranged on substrate 1 by the first supporting part 2, it is achieved thereby that the first backplane
Plate and the connection of substrate 1.First conductive layer 9 can be by mode well-known to those skilled in the art
Be arranged on the upper surface of the first non-conductive layer 5 so that described vibrating diaphragm 6 can with in this first back pole plate
First conductive layer 9 constitutes the first capacitance structure.First conductive layer 9 is arranged on the first non-conductive layer 5
The position that vibrating area effective with vibrating diaphragm 6 is corresponding so that the first conduction in vibrating diaphragm 6 and the first back pole plate
The electric capacity that layer 9 produces is effective capacitance；And the first non-conductive layer 5 in the first back pole plate can not with shake
Film 6 produces electric capacity, thus reduces vibrating diaphragm 6 and the parasitic capacitance of the first back pole plate, improves first
The sensitivity of capacitance structure.
Based on similar principle, the second back pole plate of the present utility model includes the second non-conductive layer 7, with
And it is arranged on second non-conductive layer 7, second conductive layer 8 adjacent to vibrating diaphragm 6 side；Described second non-leads
Electric layer 7 can be arranged on vibrating diaphragm 6 by the 3rd supporting part 4, it is achieved thereby that the second back pole plate
Connect；It is non-that second conductive layer 8 can be arranged on second by mode well-known to those skilled in the art
The lower surface of conductive layer 7 so that described vibrating diaphragm 6 can be with the second conductive layer 8 in this second back pole plate
Constitute the second capacitance structure.Second conductive layer 8 is arranged on the second non-conductive layer 7 effective with vibrating diaphragm 6
The position that vibrating area is corresponding so that the electricity that the second conductive layer 8 in vibrating diaphragm 6 and the second back pole plate produces
Hold for effective capacitance；And the second non-conductive layer 7 in the second back pole plate can not produce electric capacity with vibrating diaphragm 6,
Thus reduce vibrating diaphragm 6 and the parasitic capacitance of the second back pole plate, improve the sensitive of the second capacitance structure
Degree.
MEMS microphone chip of the present utility model is work when, due in the first back pole plate
There is the first conductive layer
MEMS microphone chip of the present utility model, sets between described first back pole plate and vibrating diaphragm 6
It is equipped with the first limiting section 6a for limiting vibrating diaphragm 6 deformation, can be limited by this first limiting section 6a
The degree that damping film 6 deforms towards the first back pole plate direction, such that it is able to prevent vibrating diaphragm 6 and
One back pole plate adhesion or short circuit are together.Be provided with between described second back pole plate and vibrating diaphragm 6 for
Limit the second limiting section 7a of vibrating diaphragm 6 deformation, vibrating diaphragm 6 can be limited by this second limiting section 7a
The degree deformed towards the second back pole plate direction, such that it is able to prevent vibrating diaphragm 6 and the second back pole plate
Adhesion or short circuit are together.
In one specific embodiment of this utility model, described first limiting section 6a is arranged on and shakes
The side of neighbouring first back pole plate on film 6, this first limiting section 6a can be integrated with vibrating diaphragm 6；
Described first conductive layer 9 is provided with multiple through hole exposed the first non-conductive layer 5 relevant position
9a, and the first non-conductive layer 5 exposing this through hole 9a position is corresponding with the first limiting section 6a.When
When vibrating diaphragm occurs towards the moderate finite deformation in the first back pole plate direction, this first limiting section 6a passes through hole
9a also contacts with the first non-conductive layer 5, such that it is able to prevent vibrating diaphragm 6 and the first conductive layer 9
Contact, it is to avoid the generation of the unfavorable conditions such as short circuit, adhesion, it is ensured that vibrating diaphragm 6 normal
Work.
Described second limiting section 7a is arranged on the second non-conductive layer 7, and described second limiting section 7a
Extend through described second conductive layer 8 and to the direction of vibrating diaphragm 6.This second limiting section 7a and second non-
Conductive layer 7 can be integrated.When vibrating diaphragm occurs the moderate finite deformation towards the second back pole plate direction
Time, this second limiting section 7a can contact with vibrating diaphragm 6, such that it is able to prevent vibrating diaphragm 6 and second
Conductive layer 8 contacts, it is to avoid the generation of the unfavorable conditions such as short circuit, adhesion, it is ensured that vibrating diaphragm
The normal work of 6.
Based on above-mentioned similar principle, this utility model another preferred embodiment in, described
One limiting section is also disposed on the first non-conductive layer 5, and described first limiting section is led through described first
Electric layer 9 also extends to the direction of vibrating diaphragm 6；This first limiting section and the first non-conductive layer 5 can be one
Body formed.When vibrating diaphragm generation is towards the moderate finite deformation in the first back pole plate direction, this first limiting section
Can contact with vibrating diaphragm 6, such that it is able to prevent vibrating diaphragm 6 from contacting with the first conductive layer 9,
Avoid the generation of the unfavorable condition such as short circuit, adhesion, it is ensured that the normal work of vibrating diaphragm 6.
Described second limiting section may be provided at the side of neighbouring second back pole plate on vibrating diaphragm 6, this second limit
Position portion can be integrated with vibrating diaphragm 6；Described second conductive layer 8 is provided with multiple by second
The through hole that non-conductive layer 7 exposes, exposes the second non-conductive layer 7 and the second limiting section of this lead to the hole site
Corresponding.When vibrating diaphragm generation is towards the moderate finite deformation in the second back pole plate direction, this second limiting section meeting
With through the through hole on the second conductive layer 8, and contact with the second non-conductive layer 7, thus can
Preventing vibrating diaphragm 6 from contacting with the second conductive layer 8, it is to avoid unfavorable conditions such as short circuit, adhesions
Generation, it is ensured that the normal work of vibrating diaphragm 6.
MEMS microphone chip of the present utility model, by vibrating diaphragm, the first back pole plate, the second backplane
Plate constitutes differential capacitance structure, can by the first limiting section between the first back pole plate and vibrating diaphragm
To prevent vibrating diaphragm and the first back pole plate from sticking together or the problem of short circuit, by be positioned at the second back pole plate with
The second limiting section between vibrating diaphragm is possible to prevent vibrating diaphragm and the second back pole plate to stick together or the problem of short circuit,
While ensureing the conversion of MEMS microphone chip acoustic-electric, improve the performance of MEMS microphone；And
First back pole plate, the second back pole plate contain respectively and the conductive layer of vibrating diaphragm generation effective capacitance, with
And with the non-conductive layer of vibrating diaphragm generation electric capacity, thus can not can reduce the parasitic electricity of MEMS microphone chip
Hold, improve the sensitivity of MEMS microphone chip.
Embodiment of the present utility model additionally provides a kind of MEMS microphone, and it includes MEMS microphone
Chip, wherein, MEMS microphone chip is the MEMS microphone core described by all of the above embodiment
Sheet.
Although specific embodiments more of the present utility model being described in detail by example,
But it should be appreciated by those skilled in the art, above example is merely to illustrate rather than be
Restriction scope of the present utility model.It should be appreciated by those skilled in the art, can be without departing from this reality
In the case of novel scope and spirit, above example is modified.Model of the present utility model
Enclose and be defined by the following claims.
Claims (10)
1. a MEMS microphone chip, it is characterised in that: include the substrate with back of the body chamber (1a)
(1), and it is arranged on the first back pole plate on substrate (1), vibrating diaphragm (6), the second back pole plate,
Wherein said vibrating diaphragm (6) with first back pole plate constitute the first capacitance structure, described vibrating diaphragm (6) with
The second capacitance structure that second back pole plate is constituted defines differential capacitance structure；
Described first back pole plate includes the first non-conductive layer (5), and is arranged on the first non-conductive layer
(5) first conductive layer (9) of neighbouring vibrating diaphragm (6) side；At described first back pole plate and vibrating diaphragm (6)
Between be provided with for limiting the vibrating diaphragm (6) the first limiting section (6a) towards the first back pole plate Direction distortion；
Described second back pole plate includes the second non-conductive layer (7), and is arranged on the second non-conductive layer
(7) second conductive layer (8) of neighbouring vibrating diaphragm (6) side；At described second back pole plate and vibrating diaphragm (6)
Between be provided with for limiting the vibrating diaphragm (6) the second limiting section (7a) towards the second back pole plate Direction distortion.
MEMS microphone chip the most according to claim 1, it is characterised in that: described first
Limiting section is arranged on the first non-conductive layer (5), and described first limiting section is through described first conduction
Layer (9) also extends to the direction of vibrating diaphragm (6).
MEMS microphone chip the most according to claim 1, it is characterised in that: described first
Limiting section (6a) is arranged on the side of upper neighbouring first back pole plate of vibrating diaphragm (6), described first conductive layer
(9) it is provided with multiple by the first non-conductive layer (5) on the first limiting section (6a) corresponding position
The through hole (9a) exposed.
MEMS microphone chip the most according to claim 3, it is characterised in that: described first
Limiting section (6a) is structure as a whole with vibrating diaphragm (6).
MEMS microphone chip the most according to claim 1, it is characterised in that: described second
Limiting section (7a) is arranged on the second non-conductive layer (7), and described second limiting section (7a) passes
Described second conductive layer (8) also extends to the direction of vibrating diaphragm (6).
MEMS microphone chip the most according to claim 5, it is characterised in that: described second
Limiting section (7a) is structure as a whole with the second non-conductive layer (7).
MEMS microphone chip the most according to claim 1, it is characterised in that: described second
Limiting section is arranged on the side of upper neighbouring second back pole plate of vibrating diaphragm (6), described second conductive layer (8)
Second non-conductive layer (7) multiple is exposed by upper be provided with the second limiting section (7a) corresponding position
Through hole.
MEMS microphone chip the most according to claim 1, it is characterised in that: described first
Back pole plate is positioned at the lower section of vibrating diaphragm (6)；Described second back pole plate is positioned at the top of vibrating diaphragm (6).
MEMS microphone chip the most according to claim 8, it is characterised in that: described first
Back pole plate is supported on substrate (1) by the first supporting part (2), and described vibrating diaphragm (6) passes through second
Supporting part (3) is supported on the first back pole plate, and described second back pole plate passes through the 3rd supporting part (4)
It is supported on vibrating diaphragm (6).
10. a MEMS microphone, it is characterised in that: include such as any one of claim 1 to 9
Described MEMS microphone chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620072017.2U CN205510403U (en) | 2016-01-25 | 2016-01-25 | MEMS microphone chip and MEMS microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620072017.2U CN205510403U (en) | 2016-01-25 | 2016-01-25 | MEMS microphone chip and MEMS microphone |
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| Publication Number | Publication Date |
|---|---|
| CN205510403U true CN205510403U (en) | 2016-08-24 |
Family
ID=56722042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620072017.2U Active CN205510403U (en) | 2016-01-25 | 2016-01-25 | MEMS microphone chip and MEMS microphone |
Country Status (1)
| Country | Link |
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| CN (1) | CN205510403U (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106488369A (en) * | 2016-10-31 | 2017-03-08 | 歌尔股份有限公司 | A kind of pair of backplane MEMS sound-producing device and electronic equipment |
| CN107244646A (en) * | 2017-03-09 | 2017-10-13 | 歌尔科技有限公司 | A kind of MEMS chip |
| CN107529121A (en) * | 2017-09-28 | 2017-12-29 | 歌尔股份有限公司 | Electret Condencer Microphone and electronic installation |
| CN107986225A (en) * | 2016-10-26 | 2018-05-04 | 鑫创科技股份有限公司 | MEMS devices and the method for making MEMS |
| CN108347683A (en) * | 2017-01-23 | 2018-07-31 | 英飞凌科技股份有限公司 | Micro electromechanical microphone |
| CN108600928A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN109660927A (en) * | 2018-12-29 | 2019-04-19 | 华景科技无锡有限公司 | A kind of microphone chip and microphone |
| CN113784266A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN113784265A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN113784264A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN114520947A (en) * | 2022-04-20 | 2022-05-20 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
| WO2022104928A1 (en) * | 2020-11-17 | 2022-05-27 | 瑞声声学科技(深圳)有限公司 | Mems microphone chip |
-
2016
- 2016-01-25 CN CN201620072017.2U patent/CN205510403U/en active Active
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107986225A (en) * | 2016-10-26 | 2018-05-04 | 鑫创科技股份有限公司 | MEMS devices and the method for making MEMS |
| CN107986225B (en) * | 2016-10-26 | 2020-06-09 | 鑫创科技股份有限公司 | MEMS device and method of fabricating a MEMS |
| US10798493B2 (en) | 2016-10-26 | 2020-10-06 | Solid State System Co., Ltd. | Micro-electro-mechanical systems (MEMS) device and method for fabricating the MEMS |
| CN106488369A (en) * | 2016-10-31 | 2017-03-08 | 歌尔股份有限公司 | A kind of pair of backplane MEMS sound-producing device and electronic equipment |
| CN108347683A (en) * | 2017-01-23 | 2018-07-31 | 英飞凌科技股份有限公司 | Micro electromechanical microphone |
| CN107244646A (en) * | 2017-03-09 | 2017-10-13 | 歌尔科技有限公司 | A kind of MEMS chip |
| CN107244646B (en) * | 2017-03-09 | 2023-11-17 | 歌尔微电子有限公司 | MEMS chip |
| EP3691294A4 (en) * | 2017-09-28 | 2021-08-04 | Weifang Goertek Microelectronics Co., Ltd. | Condenser microphone and electronic device |
| CN107529121A (en) * | 2017-09-28 | 2017-12-29 | 歌尔股份有限公司 | Electret Condencer Microphone and electronic installation |
| WO2019061618A1 (en) * | 2017-09-28 | 2019-04-04 | 歌尔股份有限公司 | Condenser microphone and electronic device |
| US10932064B2 (en) | 2017-09-28 | 2021-02-23 | Weifang Goertek Microelectronics Co., Ltd | Condenser microphone and electronic device |
| CN108600928A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN109660927A (en) * | 2018-12-29 | 2019-04-19 | 华景科技无锡有限公司 | A kind of microphone chip and microphone |
| CN109660927B (en) * | 2018-12-29 | 2024-04-12 | 华景科技无锡有限公司 | Microphone chip and microphone |
| CN113784266A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN113784265A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN113784264A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN113784265B (en) * | 2020-06-09 | 2022-06-14 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2022104928A1 (en) * | 2020-11-17 | 2022-05-27 | 瑞声声学科技(深圳)有限公司 | Mems microphone chip |
| CN114520947A (en) * | 2022-04-20 | 2022-05-20 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
| CN114520947B (en) * | 2022-04-20 | 2022-07-08 | 苏州敏芯微电子技术股份有限公司 | Microphone assembly and electronic equipment |
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Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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Effective date of registration: 20191113 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co., Ltd Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Gore Co., Ltd. |
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