CN205508815U - Frequency division multiplex wireless communication system - Google Patents
Frequency division multiplex wireless communication system Download PDFInfo
- Publication number
- CN205508815U CN205508815U CN201620332676.5U CN201620332676U CN205508815U CN 205508815 U CN205508815 U CN 205508815U CN 201620332676 U CN201620332676 U CN 201620332676U CN 205508815 U CN205508815 U CN 205508815U
- Authority
- CN
- China
- Prior art keywords
- chip
- frequency division
- heat
- power amplification
- division multiplexing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a frequency division multiplex wireless communication system, including power, antenna, frequency division multiplex radio communication circuit board, power amplification module, the power amplification module includes power amplification chip, control chip and switcher chip, still includes thermal pad piece and the RF shielding heat exchanger that looses, and the thermal pad piece is established at power amplification chip, control chip or switcher chip's top, be equipped with the heat conduction membrane between thermal pad piece and power amplification chip, control chip or the switcher chip, the RF shielding scattered heat exchanger cover the power amplification module, be equipped with the heat conduction membrane between the scattered heat exchanger's of thermal pad piece, power amplification chip, control chip or switcher chip and RF shielding the top surface. By the utility model discloses a through the current improvement that packaging technique made, there is not changing circuitry's complexity, ensured the stability of preparation. The utility model discloses a method through the encapsulation increases a heat dissipation path for low -noise amplifier for the temperature reduces, thereby reduces the thermal noise.
Description
Technical field
This utility model relates to a kind of frequency division multiplexing radio communication system.
Background technology
In these frequency division multiplexing radio communication systems of W-CDMA and LTE-FDD, transmitter and receiver works simultaneously, and the reception in-band noise from power amplifier can affect the sensitivity of receiver.Although reception link and transmitting chain being kept apart by antenna tronsfer switch, but it is intended to utilize antenna tronsfer switch to realize enough isolation effects in specific bandwidth and to have low insertion loss in power amplifier to the path of antenna be very difficult.In WCDMA communication protocol, some reception frequencies carried are had to be within close proximity mutually with transmission frequency.Such as at Band11, transmission frequency, at 1427.9-1447.9MHz, receives frequency and only has 48MHz the least at 1475.9-1495.9MHz, the interval between them.In this case, when the isolating power of antenna tronsfer switch does not improve, in-band noise will increase.In-band noise increase the performance that can have a strong impact on low-noise amplifier.Thus in Frequency Division Multiplexing system, in-band noise problem becomes more important.
In a cellular communication system, by 3GPP(third generation Partnership Program agreement) defined in frequency band get more and more.In order to meet developing rapidly of mobile data communication, LTE(Long Term Evolution) have begun to cover the world.Radio-frequency front-end module on mobile phone includes the radio-frequency receiving-transmitting chain more than ten now, and in future soon, the number of radio-frequency receiving-transmitting chain will be present twice.Due to large number of, the most present 3G and the 4G system of radio-frequency receiving-transmitting chain, primary bands being all use Frequency Division Multiplexing system, when transmission frequency is close with reception frequency, the impact for in-band noise will be the biggest.The existing solution to in-band noise typically has two kinds, and one is to improve antenna tronsfer switch, to promote its isolating power so that the impact between each link reduces.Two is by receiving design inductor-capacitor trap circuit on link, lowering the in-band noise in certain frequency band.Both approaches can make in-band noise lower.The method of existing solution in-band noise, either designs new antenna tronsfer switch, or design inductor-capacitor trap circuit, all can make the complexity of design, increase the difficulty of circuit design.Furthermore owing to the difficulty of circuit design increases, more experienced engineer cannot ensure the quality of flow, and this can increase the number of times of flow undoubtedly, thus increases cost of manufacture.The increase of complexity in circuits simultaneously also brings along certain unstability.
Utility model content
In order to solve the deficiency that prior art exists, the purpose of this utility model is to provide a kind of radiating effect that increases to reduce the frequency division multiplexing radio communication system of thermal noise.
For achieving the above object, this utility model be the technical scheme is that
nullA kind of frequency division multiplexing radio communication system，Including power supply、Antenna、Frequency division multiplexing radio communication circuit board、Power amplification module，Power supply、Antenna and power amplification module are all located on frequency division multiplexing radio communication circuit board and electrically connect with frequency division multiplexing radio communication circuit board，Described power amplification module includes power amplifier chip、Control chip and switch chip，Also include heat-conducting pad and radio shielding heat dissipating housing，Heat-conducting pad is located at power amplifier chip、Control chip or the top of switch chip，In order to make power amplifier chip、The end face of control chip and switch chip is at grade，Described heat-conducting pad and power amplifier chip、It is provided with heat conducting film between control chip or switch chip，Power amplification module is covered by radio shielding heat dissipating housing，Described heat-conducting pad、Power amplifier chip、It is provided with heat conducting film between the end face of control chip or switch chip and radio shielding heat dissipating housing.
Further, described power amplifier chip uses GaAs material, the power amplifier chips of heterojunction bipolar transistor；Described control chip uses silicon materials, the controller chip of complementary metal oxide semiconductors (CMOS)；Described switch chip uses GaAs material, the derailing switch chip of HEMT.
Further, described heat-conducting pad is copper sheet or silicon chip.
Further, described heat conducting film is made up of epoxide resin material.
The beneficial effects of the utility model:It is the improvement made by existing encapsulation technology by this utility model, does not change the complexity of circuit, it is ensured that the stability of making.This utility model is to be that low-noise amplifier increases a heat dissipation path by the method for encapsulation so that temperature reduces, thus reduces thermal noise。
Accompanying drawing explanation
With detailed description of the invention, this utility model is described in further detail below in conjunction with the accompanying drawings:
Fig. 1 is circuit structure diagram of the present utility model；
Fig. 2 is the schematic diagram of power amplification module shown in Fig. 1.
In figure: 1, frequency division multiplexing radio communication circuit board；2, power supply；3, antenna；4, power amplification module；5, power amplifier chip；6, control chip；7, switch chip；8, heat-conducting pad；9, radio shielding heat dissipating housing；10, heat conducting film；11, heat conducting film.
Detailed description of the invention
nullSuch as Fig. 1、Shown in 2，A kind of frequency division multiplexing radio communication system，Including power supply 2、Antenna 3、Frequency division multiplexing radio communication circuit board 1 and power amplification module 4，Power supply 2、Antenna 3 and power amplification module 4 are all located on frequency division multiplexing radio communication circuit board 1 and electrically connect with frequency division multiplexing radio communication circuit board 1，Described power amplification module 4 includes power amplifier chip 5、Control chip 6 and switch chip 7，Also include heat-conducting pad 8 and radio shielding heat dissipating housing 9，In the present embodiment，Due to power amplifier chip 5、Control chip 6 is different with the height of switch chip 7，And the height of power amplifier chip 5 is minimum，Switch chip 7 is the highest，Therefore heat-conducting pad 8 is located at power amplifier chip 5 and the top of control chip 6，Make the end face of heat-conducting pad and switch chip at grade，One layer of heat conducting film 10 of paving the most on this plane，Power amplification module is covered by radio shielding heat dissipating housing 9，Radio shielding heat dissipating housing 9 contacts with heat conducting film 10，Heat conducting film 11 it is provided with between described heat-conducting pad and power amplifier chip and control chip.
Further, described power amplifier chip 5 uses the power amplifier chips of GaAs material, heterojunction bipolar transistor；Described control chip 6 uses the controller chip of silicon materials, complementary metal oxide semiconductors (CMOS)；Described switch chip 7 uses the derailing switch chip of GaAs material, HEMT.
Further, described heat-conducting pad 8 is copper sheet or silicon chip.
Further, described heat conducting film 10 and heat conducting film 11 are made up of epoxide resin material.
Operation principle: it is understood that the source of in-band noise is generally divided into two parts, one is derived from the noise of the active device self of power amplifier, and two come from the noise that biasing circuit couples with other grade of circuit active device.Owing to in-band noise mostlys come from the noise of active device self, and the noise of active device mainly has thermal noise and shot noise, so it is proposed that reduce the thermal noise of active device own solution.Increasing because thermal noise is as the increase of temperature, only need to temperature be lowered just can reach the purpose reducing thermal noise.
The packaging technology flow process of this patent: use the mode of Reflow Soldering that power amplifier chip, control chip and switch chip are welded on frequency division multiplexing radio communication circuit board, we are meeting additional one layer of heat conducting film (die attach film on chip, DAF), this layer of Heat Conduction Material is mainly used to improve chip to the capacity of heat transmission between top, if the thickness of different chips is different, shorter chip can increase by one layer of heat-conducting pad (copper sheet or silicon chip) and increase the height of chip, finally makes the highly consistent of three chip blocks.Final height can be somewhat high than without capping cavity.When having arrived encapsulation, encapsulation tool can up push away chip thermal conduction portions, it is ensured that the area of thermal conduction portions above chip will not be override.So radio frequency shielded enclosure still can be with chip by good heat transfer.
When laboratory is tested, we carry out the temperature of measuring circuit plate by thermocouple, thermocouple is the temperature element that temperature survey is conventional, it directly measures temperature, and temperature signal is converted into thermo-electromotive force signal, is converted into the temperature of measured medium by electric meter (secondary meter).
We add the mode of top heat dissipation, so heat will not all flow on circuit board, the temperature of the circuit board before therefore adding and after addition is different, then we just can be by thermal resistance (the Board-to-ambient thermal between test circuit board to external environment
Resistance) effect of our this radiating mode is weighed.
Wherein RBADefinition is circuit board to the thermal resistance between external environment, RBAExpression formula is:
R BA=
( T B – T A ) / P D,T BIt is the temperature of circuit board,T AIt is ambient temperature,P DIt is the power of chip consumption.Definition is over, and we just can be by the resistance of test thermal resistance under equivalent environment different capacity later for thermal resistance.We will test the radiating effect in multi-chip modules encapsulates by same method below.After adding top radio frequency shielded enclosure, heat flows with approximately equalised two-way, so the heat arriving circuit board reduces, therefore the temperature of circuit board can be lower than original, thus the resistance of the thermal resistance obtained under same power supplies can decline.After measured, the value of thermal resistance probably have dropped 50%.
The above is preferred implementation of the present utility model; certainly the interest field of this utility model can not be limited with this; should be understood that; for those skilled in the art; the technical solution of the utility model is modified or equivalent, without departure from the protection domain of technical solutions of the utility model.
Claims (4)
- null1. a frequency division multiplexing radio communication system，Including power supply、Antenna、Frequency division multiplexing radio communication circuit board、Power amplification module，Power supply、Antenna and power amplification module are all located on frequency division multiplexing radio communication circuit board and electrically connect with frequency division multiplexing radio communication circuit board，It is characterized in that: described power amplification module includes power amplifier chip、Control chip and switch chip，Also include heat-conducting pad and radio shielding heat dissipating housing，Heat-conducting pad is located at power amplifier chip、Control chip and the top of switch chip，In order to make power amplifier chip、The end face of control chip and switch chip is at grade，Described heat-conducting pad and power amplifier chip、It is provided with heat conducting film between control chip or switch chip，Power amplification module is covered by radio shielding heat dissipating housing，Described heat-conducting pad、Power amplifier chip、It is provided with heat conducting film between the end face of control chip or switch chip and radio shielding heat dissipating housing.
- Frequency division multiplexing radio communication system the most according to claim 1, it is characterised in that: described power amplifier chip uses GaAs material, the power amplifier chips of heterojunction bipolar transistor；Described control chip uses silicon materials, the controller chip of complementary metal oxide semiconductors (CMOS)；Described switch chip uses GaAs material, the derailing switch chip of HEMT.
- Frequency division multiplexing radio communication system the most according to claim 1, it is characterised in that: described heat-conducting pad is copper sheet or silicon chip.
- Frequency division multiplexing radio communication system the most according to claim 1, it is characterised in that: described heat conducting film is made up of epoxide resin material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620332676.5U CN205508815U (en) | 2016-04-20 | 2016-04-20 | Frequency division multiplex wireless communication system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620332676.5U CN205508815U (en) | 2016-04-20 | 2016-04-20 | Frequency division multiplex wireless communication system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205508815U true CN205508815U (en) | 2016-08-24 |
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ID=56705627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620332676.5U Expired - Fee Related CN205508815U (en) | 2016-04-20 | 2016-04-20 | Frequency division multiplex wireless communication system |
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| Country | Link |
|---|---|
| CN (1) | CN205508815U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789191A (en) * | 2016-04-20 | 2016-07-20 | 广东工业大学 | Frequency division multiplexing wireless communication system |
-
2016
- 2016-04-20 CN CN201620332676.5U patent/CN205508815U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789191A (en) * | 2016-04-20 | 2016-07-20 | 广东工业大学 | Frequency division multiplexing wireless communication system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160824 Termination date: 20170420 |