CN205490221U - Main circuit topology structure of direct current transmission device based on IGBT - Google Patents

Main circuit topology structure of direct current transmission device based on IGBT Download PDF

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Publication number
CN205490221U
CN205490221U CN201620244352.6U CN201620244352U CN205490221U CN 205490221 U CN205490221 U CN 205490221U CN 201620244352 U CN201620244352 U CN 201620244352U CN 205490221 U CN205490221 U CN 205490221U
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China
Prior art keywords
igbt
valve
single valve
voltage source
direct current
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Expired - Fee Related
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CN201620244352.6U
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Chinese (zh)
Inventor
钟权恩
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Wide Electronics (dongguan) Co Ltd
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Wide Electronics (dongguan) Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/60Arrangements for transfer of electric power between AC networks or generators via a high voltage DC link [HVCD]

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  • Power Conversion In General (AREA)

Abstract

The utility model discloses a main circuit topology structure of direct current transmission device based on IGBT, including a direct voltage source, direct voltage source is parallelly connected to have a plurality of IGBT of group single valves, and the every IGBT of group single valve is two, and the every IGBT of group single valve is all connected on same alternating -current system, every the IGBT single valve constitute by two IGBT valves are parallelly connected, the IGBT valve includes a gate pole drive circuit, gate pole drive circuit connects IGBT to provide the ON / OFF pulse for IGBT, it has a diode, an equalizing resistance and a snubber circuit to connect in parallel respectively in the IGBT both ends, snubber circuit is become by an absorption capacitors, a dead reistance and a quick diode cluster, absorption capacitors's one end is connected in IGBT, and the negative pole of equalizing resistance and quick diode is connected to the other end, adopts the IGBT technique, utilizes the rational design of IGBT valve, has solved and has utilized VSC the safety and stability operation problem of device itself should at first be guaranteed to HVDC improvement electric wire netting ability to transmit electricity and reliability.

Description

A kind of main circuit topological structure of direct current transportation device based on IGBT
Technical field
This utility model relates to IGBT applied technical field, is specifically related to the master of a kind of direct current transportation device based on IGBT Circuit topological structure.
Background technology
Along with the continuous expansion of China's electrical network scale, improve system stability, increase transmitting capacity of the electric wire netting, improve reactive power distribution The key technical problem that China's electrical network faces will be become with voltage support.Apply based on the turn-off device with IGBT as representative High power electronic equipment is one of approach solving these problems.
In recent years, the offshore company with ABB AB as representative has developed HVDC Light technology, and this technology is successfully answered For multiple fields.Its core technology be use controlled turn-off type element constitute voltage source converter (voltagesourceconverter, VSC) direct current transportation is carried out.In the world, the title of this technology is voltage source converter D.C. high voltage transmission, domestic custom Referred to as flexible DC power transmission, it has densification, modularized design, it is easy to debugs and safeguards, it is easy to extends and realizes multiterminal The advantages such as direct current transportation, it might even be possible to realize providing back-up source to system by increasing energy storage device.But due to VSC-HVDC The complexity of device self, immature property, its operational reliability also ratio is relatively low, therefore, utilizes VSC-HVDC to improve electrical network defeated First power and reliability thereof should ensure that the safe and stable operation of device itself.
Summary of the invention
For problem above, this utility model provides the main circuit topological structure of a kind of direct current transportation device based on IGBT, Use IGBT technology, utilize the appropriate design of IGBT valve, solve utilize VSC-HVDC improve transmitting capacity of the electric wire netting and Its reliability should first ensure that the safe and stable operation problem of device itself, can effectively solve the problem in background technology.
To achieve these goals, the technical solution adopted in the utility model is as follows: a kind of direct current transportation based on IGBT fills The main circuit topological structure put, including a direct voltage source, described direct voltage source is parallel with some groups of IGBT single valves, often Group IGBT single valve is two, and often group IGBT single valve is all connected in same AC system, and each described IGBT single valve is by two Individual IGBT valve composes in parallel, and described IGBT valve includes a gate drive circuit, and described gate drive circuit connects IGBT, And providing ON/OFF pulse for IGBT, described IGBT two ends are parallel with a diode, an equalizing resistance and one respectively Absorbing circuit, described absorbing circuit is made up of an Absorption Capacitance, an absorption resistance and a fast diode, described suction The one end receiving electric capacity is connected to IGBT, and the other end connects equalizing resistance and the negative pole of fast diode.
As a kind of preferably technical scheme of this utility model, the number of described IGBT single valve is 2-5.
As a kind of preferably technical scheme of this utility model, it is connected between described IGBT single valve and direct voltage source and has electric capacity.
The beneficial effects of the utility model:
This utility model uses IGBT technology, utilizes the appropriate design of IGBT valve, solves and is utilizing VSC-HVDC to improve electrical network Ability to transmit electricity and reliability thereof should first ensure that the safe and stable operation problem of device itself.
Accompanying drawing explanation
Fig. 1 is this utility model main circuit topological structure schematic diagram.
Fig. 2 is the structural representation of this utility model IGBT valve.
Figure is numbered: 1-direct voltage source;2-IGBT single valve;3-AC system;4-IGBT valve;5-gate drive circuit; 6-IGBT;7-diode;8-equalizing resistance;9-absorbing circuit;10-Absorption Capacitance;11-absorption resistance;12-fast diode; 13-electric capacity.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, This utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain this reality With novel, it is not used to limit this utility model.
Embodiment:
As Figure 1-Figure 2, the main circuit topological structure of a kind of direct current transportation device based on IGBT, including a direct voltage source 1, Described direct voltage source 1 is parallel with some groups of IGBT single valves 2, and often group IGBT single valve 2 is two, often group IGBT single valve 2 Being all connected in same AC system 3, each described IGBT single valve 2 is composed in parallel by two IGBT valves 4, described IGBT Valve 4 includes that a gate drive circuit 5, described gate drive circuit 5 connect IGBT6, and provides ON/OFF pulse for IGBT6, Described IGBT6 two ends are parallel with 7, equalizing resistance 8 of a diode and an absorbing circuit 9, described absorption respectively Circuit 9 is made up of 10, absorption resistance 11 of an Absorption Capacitance and a fast diode 12, described Absorption Capacitance 10 One end be connected to IGBT6, the other end connects equalizing resistance 8 and the negative pole of fast diode 12.
On above-described embodiment preferably, the number of described IGBT single valve 2 is 2-5.
On above-described embodiment preferably, it is connected between described IGBT single valve 2 and direct voltage source 1 and has electric capacity 13.
Operation principle: in Fig. 2, gate drive circuit provides open and close pulse for IGBT, and equalizing resistance Rp plays static state voltage equipoise Effect, the absorbing circuit being made up of Absorption Capacitance Cs, absorption resistance Rs and fast diode Ds plays the effect of dynamic voltage balancing.
The operation principle of absorbing circuit is as follows: when IGBT ends, the voltage on Cs and IGBT valve terminal voltage phase in parallel With.When there is due to voltage spikes in IGBT valve two ends, the Ds conducting in absorbing circuit, by Absorption Capacitance is charged, absorb electricity The energy at pointing peak, reaches to protect the effect of IGBT valve.When IGBT opens, the energy stored in electric capacity passes through Rs through opening Logical IGBT release, prepares for absorption process next time.
Based on above-mentioned, this utility model uses IGBT technology, utilizes the appropriate design of IGBT valve, solves and is utilizing VSC-HVDC raising transmitting capacity of the electric wire netting and reliability thereof should first ensure that the safe and stable operation problem of device itself.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all in this practicality Any amendment, equivalent and the improvement etc. made within novel spirit and principle, should be included in protection of the present utility model Within the scope of.

Claims (3)

1. the main circuit topological structure of a direct current transportation device based on IGBT, it is characterised in that include a direct voltage source (1), Described direct voltage source (1) is parallel with some groups of IGBT single valves (2), and often group IGBT single valve (2) is two, often organizes IGBT Single valve (2) is all connected in same AC system (3), and each described IGBT single valve (2) is by two IGBT valves (4) Composing in parallel, described IGBT valve (4) includes a gate drive circuit (5), and described gate drive circuit (5) connects IGBT (6), and be IGBT (6) provide ON/OFF pulse, described IGBT (6) two ends be parallel with respectively a diode (7), one Individual equalizing resistance (8) and an absorbing circuit (9), described absorbing circuit (9) is by an Absorption Capacitance (10), a suction Receiving resistance (11) and fast diode (12) composition, one end of described Absorption Capacitance (10) is connected to IGBT (6), The other end connects equalizing resistance (8) and the negative pole of fast diode (12).
The main circuit topological structure of a kind of direct current transportation device based on IGBT the most according to claim 1, it is characterised in that: The number of described IGBT single valve (2) is 2-5.
The main circuit topological structure of a kind of direct current transportation device based on IGBT the most according to claim 1, it is characterised in that: It is connected between described IGBT single valve (2) and direct voltage source (1) and has electric capacity (13).
CN201620244352.6U 2016-03-25 2016-03-25 Main circuit topology structure of direct current transmission device based on IGBT Expired - Fee Related CN205490221U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620244352.6U CN205490221U (en) 2016-03-25 2016-03-25 Main circuit topology structure of direct current transmission device based on IGBT

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Application Number Priority Date Filing Date Title
CN201620244352.6U CN205490221U (en) 2016-03-25 2016-03-25 Main circuit topology structure of direct current transmission device based on IGBT

Publications (1)

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CN205490221U true CN205490221U (en) 2016-08-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110518786A (en) * 2018-05-22 2019-11-29 日月元科技(深圳)有限公司 A kind of novel absorbent circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110518786A (en) * 2018-05-22 2019-11-29 日月元科技(深圳)有限公司 A kind of novel absorbent circuit

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CF01 Termination of patent right due to non-payment of annual fee
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Granted publication date: 20160817

Termination date: 20190325