CN205488151U

CN205488151U - Solar cell string

Info

Publication number: CN205488151U
Application number: CN201620112921.1U
Authority: CN
Inventors: 李纲; 席军涛; 金鹏; 郭晓珍
Original assignee: SERAPHIM SOLAR SYSTEM CO Ltd
Current assignee: SERAPHIM SOLAR SYSTEM CO Ltd
Priority date: 2016-02-03
Filing date: 2016-02-03
Publication date: 2016-08-17
Anticipated expiration: 2026-02-03

Abstract

The utility model relates to a solar cell string has battery cluster body, battery cluster body includes at least one battery piece cluster, the crystal silicon battery piece that battery piece cluster set up including a plurality of ranges, the front of next crystal silicon battery piece is piled up together and is formed the electricity with the back part of a last crystal silicon battery piece and is connected. The utility model discloses have higher generated power in unit area, realize furthest's light energy utilization.

Description

A kind of solaode string

Technical field

This utility model relates to field of solar thermal power generation, particularly to a kind of solaode string.

Background technology

Solar photovoltaic assembly is the device directly luminous energy being changed into electric energy by photoelectric effect or Photochemical effects.Only Will be shone by light, moment is with regard to exportable voltage and electric current.Solaode in solar photovoltaic assembly can by crystalline state It is divided into system of crystallization diaphragm type and the big class of noncrystalline system diaphragm type two, and the former is divided into unijunction crystal form and polycrystalline shape.

Traditional crystal-silicon battery slice in solaode is all to arrange in the way of matrix, between be connected on by interconnecting strip Together.This kind of set-up mode, between there is certain area loss, it is impossible to accomplish the maximum of luminous energy in effective illuminating area Utilize.The use of the most a large amount of interconnecting strip adds production cost the most to a certain extent.

Meanwhile, the working space of solar photovoltaic assembly is typically all in outdoor, in the course of the work on crystal-silicon battery slice Conduct electricity thin grid often because some extraneous factors rupture.The thin grid that once conduct electricity rupture, certain of crystal-silicon battery slice The electric current that individual region produces just can not carry out delivery.

Utility model content

The purpose of this utility model has more high generation efficiency and can guarantee that electric current delivery is led in being to provide a kind of unit are The solaode string on road.

The technical scheme realizing this utility model purpose is: this utility model has battery strings body；Described battery strings body Including at least one cell piece string；Described cell piece string includes the crystal-silicon battery slice of multiple spread configuration；Next crystal silicon electricity The front of pond sheet is stacked with the back portion of a upper crystal-silicon battery slice and is formed and electrically connects.

Above-mentioned battery strings body includes multiple along Y-axis linearly aligned cell piece string；The crystal-silicon battery slice of described cell piece string Along X-axis linear arrangement.

Above-mentioned crystal-silicon battery slice includes that silicon chip, silicon chip surface are printed with the thin grid group of conduction；Described conduction thin grid group includes many The first direction of parallel arrangement conducts electricity thin grid, and adjacent two first directions conduct electricity and are provided with more than at least one short between thin grid Conduct electricity thin grid；The two ends of the thin grid of described short-range missile electricity are connected with the first direction at its two ends thin grid of conduction respectively.

Adjacent two first directions conduct electricity and form electric current formation district between thin grid, and the thin grid of short-range missile electricity are arranged on electric current and form district In；The thin grid of short-range missile electricity that described adjacent two electric currents are formed in district mutually stagger.

The thin grid of above-mentioned each short-range missile electricity are parallel to each other.

Above-mentioned adjacent two electric currents form the quantity of the thin grid of short-range missile electricity in district and are respectively one and two；Described adjacent two The thin grid of short-range missile electricity that electric current is formed in district mutually stagger.

The thin grid of above-mentioned each short-range missile electricity are vertical with the first direction thin grid of conduction.

Above-mentioned crystal-silicon battery slice is rectangle；The described first direction thin grid of conduction are vertical with the long limit of crystal-silicon battery slice；Described The long limit of each crystal-silicon battery slice is vertical with X-axis.

Above-mentioned crystal-silicon battery slice includes that silicon chip, silicon chip surface are printed with the thin grid group of conduction；Described conduction thin grid group includes many The first direction thin grid of conduction of parallel arrangement and the second direction thin grid of conduction of Duo Gen parallel arrangement；Described first direction conducts electricity Thin grid intersect with the second direction thin grid of conduction and are connected；Described first direction conducts electricity thin grid with the second direction thin grid of conduction not Vertically.

Above-mentioned crystal-silicon battery slice is rectangle；The long limit of described each crystal-silicon battery slice is vertical with X-axis.

This utility model has a positive effect: (1) this utility model stacking by crystal-silicon battery slice, can be in unit The setting of more polycrystalline silicon battery plate is realized so that there is in unit are higher generating efficiency in area；

(2) stacking of this utility model crystal-silicon battery slice can reduce the overall volume of product；

(3) this utility model is electrically connected by contact between crystal-silicon battery slice, substantial amounts of interconnecting strip can be saved, joint Cost-saving；

(4) in this utility model, the thin grid group of conduction on crystal-silicon battery slice can ensure that the path of a plurality of circuit, solves When path disconnects after current cannot the problem of delivery.

Accompanying drawing explanation

In order to make content of the present utility model be easier to be clearly understood, below according to specific embodiment and combine accompanying drawing, This utility model is described in further detail, wherein

Fig. 1 is structural representation of the present utility model；

Fig. 2 is the structural representation of crystal-silicon battery slice stacking in this practicality；

Fig. 3 is the structural representation of crystal-silicon battery slice in this utility model embodiment one；

Fig. 4 is the structural representation of crystal-silicon battery slice in this utility model embodiment two.

Detailed description of the invention

(embodiment one)

See that Fig. 1, Fig. 2 and Fig. 3, this utility model have battery strings body；Described battery strings body includes at least One cell piece string；Described cell piece string includes the crystal-silicon battery slice 1 of multiple spread configuration；Next crystal-silicon battery slice 1 Front be stacked with the back portion of a upper crystal-silicon battery slice 1 and formed and electrically connect；Described battery strings body bag Include multiple along Y-axis linearly aligned cell piece string；The crystal-silicon battery slice 1 of described cell piece string is along X-axis linear arrangement.

Described crystal-silicon battery slice 1 includes that silicon chip 11, silicon chip 11 surface are printed with the thin grid group 12 of conduction；The thin grid of described conduction Group 12 includes the first direction thin grid 121 of conduction of many parallel arrangements, and adjacent two first directions conduct electricity between thin grid 121 Forming electric current and form district 123, the thin grid 122 of short-range missile electricity are arranged on electric current and are formed in district 123；Described adjacent two electric current shapes The quantity becoming the thin grid 122 of the electricity of the short-range missile in district 123 is respectively one and two；Described adjacent two electric currents form district 123 The interior thin grid 122 of short-range missile electricity mutually stagger；The two ends of the thin grid 122 of described short-range missile electricity respectively with the first party guide at its two ends The thin grid 121 of electricity connect.

The thin grid 122 of described each short-range missile electricity are parallel to each other；The thin grid 122 of described each short-range missile electricity and the first direction thin grid 121 of conduction Vertically.

Described crystal-silicon battery slice 1 is rectangle；The thin grid of described first direction conduction 121 hang down with the long limit of crystal-silicon battery slice 1 Directly；The long limit of described each crystal-silicon battery slice 1 is vertical with X-axis.

(embodiment two)

Seeing Fig. 1, Fig. 2 and Fig. 4, in this utility model, crystal-silicon battery slice 1 includes that silicon chip 11, silicon chip 11 surface are printed with Conduct electricity thin grid group 12；Described conduction thin grid group 12 includes the first direction thin grid 121 and Duo Gen of conduction of many parallel arrangements The second direction thin grid 124 of conduction of parallel arrangement；The thin grid of described first direction conduction 121 and the second direction thin grid 124 of conduction Intersect connection；The thin grid of described first direction conduction 121 and second direction thin grid 124 out of plumb of conduction.

Described crystal-silicon battery slice 1 is rectangle；The long limit of described each crystal-silicon battery slice 1 is vertical with X-axis.

Other are identical with embodiment one.

Particular embodiments described above, has been carried out the purpose of this utility model, technical scheme and beneficial effect further Describe in detail, be it should be understood that and the foregoing is only specific embodiment of the utility model, be not limited to This utility model, all within spirit of the present utility model and principle, any modification, equivalent substitution and improvement etc. done, Within should be included in protection domain of the present utility model.

Claims

1. a solaode string, has battery strings body；It is characterized in that: described battery strings body includes at least One cell piece string；Described cell piece string includes the crystal-silicon battery slice (1) of multiple spread configuration；Next crystal-silicon battery slice (1) front is stacked with the back portion of a upper crystal-silicon battery slice (1) and is formed and electrically connects.

A kind of solaode string the most according to claim 1, it is characterised in that: described battery strings body includes Multiple along Y-axis linearly aligned cell piece string；The crystal-silicon battery slice (1) of described cell piece string is along X-axis linear arrangement.

A kind of solaode string the most according to claim 1 and 2, it is characterised in that: described crystal-silicon battery slice (1) include that silicon chip (11), silicon chip (11) surface are printed with the thin grid group (12) of conduction；Described conduction thin grid group (12) Conduct electricity thin grid (121) including the first direction of many parallel arrangements, adjacent two first directions conduct electricity thin grid (121) it Between be provided with the short-range missile thin grid (122) of electricity of more than at least；The two ends of the thin grid (122) of described short-range missile electricity respectively with its two The first direction thin grid of conduction (121) of end connects.

A kind of solaode string the most according to claim 3, it is characterised in that: adjacent two first party guides Forming electric current between the thin grid (121) of electricity and form district (123), the thin grid (122) of short-range missile electricity are arranged on electric current and form district (123) In；The thin grid (122) of short-range missile electricity that described adjacent two electric currents are formed in district (123) mutually stagger.

A kind of solaode string the most according to claim 4, it is characterised in that: the thin grid (122) of described each short-range missile electricity It is parallel to each other.

A kind of solaode string the most according to claim 5, it is characterised in that: described adjacent two electric current shapes The quantity becoming the thin grid (122) of the electricity of the short-range missile in district (123) is respectively one and two；Described adjacent two electric currents are formed The thin grid (122) of short-range missile electricity in district (123) mutually stagger.

A kind of solaode string the most according to claim 6, it is characterised in that: the thin grid (122) of described each short-range missile electricity The thin grid (121) that conduct electricity with first direction are vertical.

A kind of solaode string the most according to claim 7, it is characterised in that: described crystal-silicon battery slice (1) It is rectangle；The described first direction thin grid of conduction (121) is vertical with the long limit of crystal-silicon battery slice (1)；Described each crystal silicon The long limit of cell piece (1) is vertical with X-axis.

A kind of solaode string the most according to claim 1 and 2, it is characterised in that: described crystal-silicon battery slice (1) include that silicon chip (11), silicon chip (11) surface are printed with the thin grid group (12) of conduction；Described conduction thin grid group (12) The first direction thin grid of conduction (121) and the second direction thin grid of conduction of many parallel arrangements including many parallel arrangements (124)；The described first direction thin grid of conduction (121) intersects with the second direction thin grid of conduction (124) and is connected；Institute State the first direction thin grid of conduction (121) and second direction conduction thin grid (124) out of plumb.

A kind of solaode string the most according to claim 9, it is characterised in that: described crystal-silicon battery slice (1) It is rectangle；The long limit of described each crystal-silicon battery slice (1) is vertical with X-axis.