CN205488150U - Anti PID's silicon nitride antireflection coating - Google Patents
Anti PID's silicon nitride antireflection coating Download PDFInfo
- Publication number
- CN205488150U CN205488150U CN201620219216.1U CN201620219216U CN205488150U CN 205488150 U CN205488150 U CN 205488150U CN 201620219216 U CN201620219216 U CN 201620219216U CN 205488150 U CN205488150 U CN 205488150U
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- pid
- reflecting film
- antireflection coating
- nitride antireflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses an anti PID's silicon nitride antireflection coating, silicon nitride antireflection coating includes the inside and outside two -layer silicon nitride antireflection coating of deposit on the silicon chip, and wherein, inlayer silicon nitride antireflection coating's refracting index is 1.8~2.2, and outer silicon nitride antireflection coating's refracting index is 2.0~2.5. In the aspect of the technique, the utility model designs a bilayer structure's silicon nitride antireflection coating makes it to have the effect of anti PID. Adopt the utility model discloses the anti PID performance of polycrystalline silicon solar cell of double -deck silicon nitride antireflection coating design can reach IEC test requirement. The average conversion efficiency of volume production who has the polycrystalline silicon solar cell piece product of anti PID performance reaches 17.39%, and the yield is high, the performance is good. And encapsulate into the polycrystalline silicon cell product that obtains and carry out the PID test behind 72 standard packages, the subassembly power reduction 2.6%, accord with the product requirement.
Description
Technical field
This utility model relates to technical field of solar cells, particularly relates to the silicon nitride anti-reflecting film of a kind of anti-PID.
Background technology
Potential induction attenuation (Potential Induced Degradation, be abbreviated as PID), be finger assembly under reverse high-tension induction, surface occur polarization phenomena；If applying the relative and forward voltage on ground on assembly, leakage current can flow to ground from battery immediately, battery surface can accumulate negative charge, and positive charge can be attracted to battery surface thus form complex centre by these electric charges, causes the output of assembly to be decayed；If applying the negative voltage relative to ground on assembly, then leakage current can flow to battery, battery surface accumulation positive charge from ground, and the output of assembly will not be produced impact.This phenomenon is to be reported by the Sunpower company of photovoltaic manufacturer of the U.S. for 2005.
Photovoltaic plant is in actual motion, and system bias makes assembly surface generation polarization phenomena, and power can be caused time serious acutely to decay more than 50%.System design, component package and three aspects of cell piece all may cause PID phenomenon, therefore, thoroughly to solve assembly PID problem, improve cell piece making technology, improve component package technology with raising assembly to ambient temperature, humidity and high bias resistance, and the design and installation these three aspect improving electric power station system is indispensable.
The mechanism that the component power that causes high voltage decays is various.The degree of high bias decay is relevant to the leakage current flow through between encapsulating material and glass, silion cell active layer, grounding assembly frame or electricity, and these several factors can be measured by experiment；But, there is also some competition processes so that assembly PID phenomenon presents the non-linear and feature of process dependence.A kind of decay mechanism is thought, causes Na by the electric current of assembly face glass+Accumulate at battery-active layer etc. removable electric charge so that the surface field of semiconductor active layer electrically changes, referred to as polarization.From the point of view of battery aspect, the performance of battery material has modulating action to PID attenuation amplitude.
At present, commercialization crystal-silicon solar cell processing technology use technological process be broadly divided into silicon chip cleaning and texturing, spread, go PSG, make antireflection layer, screen printing electrode, drying sintering, testing, sorting totally seven steps.Although polycrystalline silicon solar cell technological process and most equipment are identical, but, at aspects such as the conversion efficiency of battery, photoelectric characteristics, along with battery structure, the Technology i.e. difference of parameter, the photoelectric properties of crystal-silicon solar cell also present different features.
In high-performance polycrystal silicon cell, in order to avoid p-n junction characteristic is degraded, electrically, SixNyHzMaterial needs to play the dielectric effect of insulation package material and cell piece p-n junction；Physically, SixNyHzMaterial needs to play the effect of the impurity sources such as the removable particle of isolation.
Preferably SixNyHzFilm to have uniform constituent.The chemical reaction occurred in PECVD deposits is more complicated, the component that the component of the film obtained may not require that.One target of depositing operation is intended to there is appropriate number of molecule in the reaction, in order to make the component of the film that deposition obtains close to component ratio corresponding in chemical equation.
SixNyHzThe structure of film is the most critically important, especially the crystallite dimension in film layer.If grain size change in film layer, the electrical and mechanical characteristic of film can change, and this will affect the long-term reliability of thin film, especially electromigration.For polycrystalline silicon solar cell device, antireflective coating is the best with the covering at step of the front silver grating line, has obvious effect for alleviating PID effect.Accordingly, it would be desirable to minimizing membrane damage, select suitable antireflective coating crystallite dimension, make the covering at step good.
Polycrystalline silicon solar cell, in making antireflection layer step, typically takes PECVD method to deposit single or multiple lift SixNyHzThin film, refractive index is about 2.05, and thickness is at about 75 ~ 80nm.This silicon nitride layer is generally used as the passivation protection layer of polycrystalline silicon solar cell, on the one hand can well suppress the diffusion of impurity and moisture due to it, and still further aspect can increase the absorbance of light, but weak for the Performance comparision in terms of anti-PID.This layer of material is considered to improve key one ring of PID.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide the silicon nitride anti-reflecting film of a kind of anti-PID, it is intended to solve the problem that existing silicon nitride anti-reflecting film anti-PID performance is more weak.
The technical solution of the utility model is as follows:
A kind of silicon nitride anti-reflecting film of anti-PID, wherein, described silicon nitride anti-reflecting film includes the inside and outside two-layer silicon nitride anti-reflecting film being deposited on silicon chip, and the refractive index of internal layer silicon nitride anti-reflecting film is 1.8 ~ 2.2, and the refractive index of outer layer silicon nitride anti-reflecting film is 2.0 ~ 2.5.
The silicon nitride anti-reflecting film of described anti-PID, wherein, the thickness of internal layer silicon nitride anti-reflecting film is 18.5 ~ 22.5nm, and the thickness of outer layer silicon nitride anti-reflecting film is 55.5 ~ 65.5nm.
The silicon nitride anti-reflecting film of described anti-PID, wherein, the refractive index of internal layer silicon nitride anti-reflecting film is 2.0, and the refractive index of outer layer silicon nitride anti-reflecting film is 2.2.
The silicon nitride anti-reflecting film of described anti-PID, wherein, the thickness of internal layer silicon nitride anti-reflecting film is 20.5nm, and the thickness of outer layer silicon nitride anti-reflecting film is 61.5nm.
Beneficial effect: the refractive index of the silicon nitride antireflection layer of polycrystal silicon cell is designed by this utility model, thus obtain the silicon nitride antireflection layer with anti-PID performance.
Accompanying drawing explanation
Fig. 1 is the structural representation of the silicon nitride anti-reflecting film preferred embodiment of a kind of anti-PID of this utility model.
Detailed description of the invention
This utility model provides the silicon nitride anti-reflecting film of a kind of anti-PID, for making the purpose of this utility model, technical scheme and effect clearer, clear and definite, further describes this utility model below.Should be appreciated that specific embodiment described herein, only in order to explain this utility model, is not used to limit this utility model.
Fig. 1 is the structural representation of the silicon nitride anti-reflecting film preferred embodiment of a kind of anti-PID of this utility model, as shown in the figure, described silicon nitride anti-reflecting film includes the inside and outside two-layer silicon nitride anti-reflecting film being deposited on silicon chip 1, wherein, the refractive index of internal layer silicon nitride anti-reflecting film 2 is 1.8 ~ 2.2, and the refractive index of outer layer silicon nitride anti-reflecting film 3 is 2.0 ~ 2.5.This utility model devises double-deck silicon nitride anti-reflecting film, by changing the refractive index of silicon nitride anti-reflecting film, is allowed to have anti-PID effect.Preferably, the refractive index of internal layer silicon nitride anti-reflecting film is 2.0, and the refractive index of outer layer silicon nitride anti-reflecting film is 2.2.This utility model is by optimizing the refractive index of inside and outside layer silicon nitride anti-reflecting film, to improve the anti-PID effect of silicon nitride anti-reflecting film further.
Further, the thickness of this utility model internal layer silicon nitride anti-reflecting film is 18.5 ~ 22.5nm, and the thickness of outer layer silicon nitride anti-reflecting film is 55.5 ~ 65.5nm.Silicon nitride anti-reflecting film of the present utility model, by changing the thickness of silicon nitride anti-reflecting film, to improve the anti-PID effect of silicon nitride anti-reflecting film further.Preferably, the thickness of internal layer silicon nitride anti-reflecting film is 20.5nm, and the thickness of outer layer silicon nitride anti-reflecting film is 61.5nm.This utility model is by optimizing the thickness of inside and outside layer silicon nitride anti-reflecting film, to improve the anti-PID effect of silicon nitride anti-reflecting film substantially.Thicknesses of layers and the refractive index of silicon nitride antireflection layer are designed by this utility model, finally give the silicon nitride antireflection layer with anti-PID performance.
Further, the silicon nitride anti-reflecting film of arbitrary described anti-PID is also applied in polycrystalline silicon solar cell by this utility model.The polycrystalline silicon solar cell anti-PID performance using the design of this utility model double-layer silicon nitride anti-reflecting film can reach IEC test request.The average conversion efficiency of volume production of the polycrystalline silicon solar cell flake products with anti-PID performance reaches 17.39%, and yield rate is high, performance is good.
Further, polycrystalline silicon solar cell as above is also packaged by this utility model, makes assembly.This utility model carries out PID test (test condition: 60 ° of C, 85% RH, 96 hours ,-1000V per IEC 62804 Ed.1 after the polycrystalline silicon solar cell product of acquisition is packaged into 72 standard packages
Draft), component power have dropped 2.6%, meets product requirement.The thicknesses of layers of silicon nitride antireflection layer of polycrystal silicon cell, refractive index etc. are designed by this utility model, finally give the polycrystal silicon cell product with anti-PID performance.Carrying out double 85 tests after being packaged into 72 chip modules, power loss is 2.6%, meets the PID testing standard that TUV specifies.
In sum, the silicon nitride anti-reflecting film of a kind of anti-PID that this utility model provides.At technical elements, this utility model devises double-deck silicon nitride anti-reflecting film, is allowed to have anti-PID effect.The polycrystalline silicon solar cell anti-PID performance using the design of this utility model double-layer silicon nitride anti-reflecting film can reach IEC test request.The average conversion efficiency of volume production of the polycrystalline silicon solar cell flake products with anti-PID performance reaches 17.39%, and yield rate is high, performance is good.And carrying out PID test after the polycrystal silicon cell product of acquisition is packaged into 72 standard packages, component power have dropped 2.6%, meets product requirement.
Should be understood that; application of the present utility model is not limited to above-mentioned citing; for those of ordinary skills, can be improved according to the above description or convert, all these modifications and variations all should belong to the protection domain of this utility model claims.
Claims (4)
1. the silicon nitride anti-reflecting film of an anti-PID, it is characterized in that, described silicon nitride anti-reflecting film includes the inside and outside two-layer silicon nitride anti-reflecting film being deposited on silicon chip, and the refractive index of internal layer silicon nitride anti-reflecting film is 1.8 ~ 2.2, and the refractive index of outer layer silicon nitride anti-reflecting film is 2.0 ~ 2.5.
The silicon nitride anti-reflecting film of anti-PID the most according to claim 1, it is characterised in that the thickness of internal layer silicon nitride anti-reflecting film is 18.5 ~ 22.5nm, the thickness of outer layer silicon nitride anti-reflecting film is 55.5 ~ 65.5nm.
The silicon nitride anti-reflecting film of anti-PID the most according to claim 1, it is characterised in that the refractive index of internal layer silicon nitride anti-reflecting film is 2.0, the refractive index of outer layer silicon nitride anti-reflecting film is 2.2.
The silicon nitride anti-reflecting film of anti-PID the most according to claim 2, it is characterised in that the thickness of internal layer silicon nitride anti-reflecting film is 20.5nm, the thickness of outer layer silicon nitride anti-reflecting film is 61.5nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620219216.1U CN205488150U (en) | 2016-03-21 | 2016-03-21 | Anti PID's silicon nitride antireflection coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620219216.1U CN205488150U (en) | 2016-03-21 | 2016-03-21 | Anti PID's silicon nitride antireflection coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205488150U true CN205488150U (en) | 2016-08-17 |
Family
ID=56653789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620219216.1U Active CN205488150U (en) | 2016-03-21 | 2016-03-21 | Anti PID's silicon nitride antireflection coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205488150U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826402A (en) * | 2016-03-21 | 2016-08-03 | 佛山职业技术学院 | Anti-potential induced degradation (PID) silicon nitride antireflection film, preparation method of anti-PID silicon nitride antireflection film and application of anti-PID silicon nitride antireflection film |
-
2016
- 2016-03-21 CN CN201620219216.1U patent/CN205488150U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826402A (en) * | 2016-03-21 | 2016-08-03 | 佛山职业技术学院 | Anti-potential induced degradation (PID) silicon nitride antireflection film, preparation method of anti-PID silicon nitride antireflection film and application of anti-PID silicon nitride antireflection film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Rößler et al. | Impact of the transparent conductive oxide work function on injection-dependent a-Si: H/c-Si band bending and solar cell parameters | |
| TWI438904B (en) | Method for obtaining high performance thin film devices deposited on highly textured substrates | |
| US5389159A (en) | Solar cell module and method for producing the same | |
| Matsui et al. | High‐efficiency thin‐film silicon solar cells with improved light‐soaking stability | |
| US20150096613A1 (en) | Photovoltaic device and method of manufacturing the same | |
| EP3474333B1 (en) | Solar cell and production method therefor, and solar cell module | |
| CN102290448A (en) | Solar cell, solar cell manufacturing method and testing method | |
| KR102449540B1 (en) | Passivation of light-receiving surfaces of solar cells with crystalline silicon | |
| US20140261660A1 (en) | TCOs for Heterojunction Solar Cells | |
| CN102013447B (en) | Electrooptical device and manufacture method thereof | |
| KR20110070541A (en) | Thin film solar cell and method for fabricaitng the same | |
| Zhong et al. | Realization of quasi‐omnidirectional solar cells with superior electrical performance by all‐solution‐processed Si nanopyramids | |
| US20140053889A1 (en) | Solar cell, and solar cell module employing the same | |
| TWI639241B (en) | Photovoltaic element and method of producing the same | |
| Lopez-Garcia et al. | Ultrathin Wide‐Bandgap a‐Si: H‐Based Solar Cells for Transparent Photovoltaic Applications | |
| Choi et al. | Field‐Induced Radial Junction for Dopant‐Free Crystalline Silicon Microwire Solar Cells with an Efficiency of Over 20% | |
| CN101510568A (en) | Amorphous silicon/dye sensitization laminated film solar battery and preparation method thereof | |
| CN205488150U (en) | Anti PID's silicon nitride antireflection coating | |
| Du et al. | Performance enhancement of multicrystalline silicon solar cells and modules using double‐layered SiNx: H antireflection coatings | |
| Mahmood et al. | Impact of anti-soiling coating on potential induced degradation of silicon PV modules | |
| TWI452700B (en) | Photovoltaic device and method of manufacturing the same | |
| CN112103366A (en) | Silicon-based heterojunction solar cell, photovoltaic module and preparation method | |
| de Vrijer et al. | Chemical stability and performance of doped silicon oxide layers for use in thin-film silicon solar cells | |
| CN105826402B (en) | A kind of anti-PID silicon nitride anti-reflecting film and preparation method and application | |
| US20210167238A1 (en) | Heterojunction structure-based solar cell and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |