CN205465666U - Chemical mechanical polishing device - Google Patents
Chemical mechanical polishing device Download PDFInfo
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- CN205465666U CN205465666U CN201520776912.8U CN201520776912U CN205465666U CN 205465666 U CN205465666 U CN 205465666U CN 201520776912 U CN201520776912 U CN 201520776912U CN 205465666 U CN205465666 U CN 205465666U
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- 238000005498 polishing Methods 0.000 title claims abstract description 250
- 239000000126 substance Substances 0.000 title claims abstract description 27
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 238000012360 testing method Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 description 17
- 239000002002 slurry Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000008676 import Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000019643 circumnutation Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/036—Manufacturing methods by patterning a pre-deposited material
- H01L2224/03602—Mechanical treatment, e.g. polishing, grinding
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model relates to a chemical mechanical polishing device includes: the polishing is dull and stereotyped, and the upper portion face is covered by the polishing pad, and carries out the rotation, the rubbing head to polishing pad pressurization wafer, and rotates, the first sensor sets up on the polishing flat board, and together rotatory with the polishing flat board, when the downside through the wafer, the receive packet contains wafer polishing layer thickness information's output signal, the rotatory position detection part of sensor detects and polishes the dull and stereotyped together rotatory position of rotatory first sensor, the wafer rotates the rotatory position of position detection part, detecting wafer, the control part calculates the polishing layer thickness of the wafer that the orbit that passes through the wafer downside with the first sensor corresponds, and the first sensor comes the detection through the orbit of wafer downside by rotatory position detection part of sensor and the rotatory position detection part of wafer.
Description
Technical field
This utility model relates to a kind of chemical mechanical polishing apparatus, in more detail, relates to the polishing layer thickness distribution of a kind of circumferencial direction detecting wafer in chemical-mechanical polishing process, thus more accurately controls the chemical mechanical polishing apparatus of the polishing layer thickness of wafer.
Background technology
Generally, chemically mechanical polishing (Chemical Mechanical Polishing；CMP) operation refers to rotate with the state contacting the substrates such as wafer on the polishing flat board carrying out rotating, and performs mechanical polishing and make the surface of substrate become smooth operation in the way of reaching preassigned thickness.
To this end, chemical mechanical polishing apparatus is on one side so that the state that polishing pad covers the top polishing flat board carries out rotation, utilizes rubbing head wafer stresses on the surface of polishing pad and rotates, thus the surface of wafer is flatly polished.I.e., as shown in Figure 1, utilize rubbing head 20 while wafer W of pressurizeing on the polishing pad 11 rotated is while rotating 20d, meanwhile, make polishing pad 11 be also carried out rotation 11d, and supply slurry from the supply mouth 32 of slurry supply unit 30 to polishing pad 11, make slurry arrive 30d wafer W, so that the burnishing surface of wafer and polishing pad 11 perform mechanical polishing, and carry out chemical polishing based on slurry simultaneously.
Now, in polishing pad 11, adjustment disk pressurizes downwards, while rotating 40d, and, carry out reciprocal circumnutation 41d for the arm 41 making adjustment disk be positioned at end by the angle specified, thus perform chemical-mechanical polishing process on the surface of polishing pad 11, and it is modified.
Generally, wafer W carries out rotation 20d, while performing chemical-mechanical polishing process, therefore, the thickness distribution of wafer W only changes to radius lateral direction, will not change to circumferencial direction.But, the applicant is found after being measured the wafer polishing layer thickness profile of executed chemical-mechanical polishing process by experiment, even if as in figure 2 it is shown, circumferentially, thickness TL, TR of the polishing layer Lw of left side L and right side L are the most asymmetric, and produce difference.
Thus, on the premise of the thickness of wafer polishing layer Lw is circumferentially uniform, it is useful in the polishing layer thickness measuring wafer during performing chemical-mechanical polishing process, thus control wafer polishing layer thickness profile, it is made to become uniform mode, but owing to the mensuration of polishing layer thickness itself includes mistake, accordingly, there exist the problem controlling to make a mistake for making polishing layer thickness become uniformly.
Therefore, just it is being badly in need of a kind of relative to circumferencial direction composition, is measuring the polishing layer thickness of wafer W the most exactly such that it is able to the polishing layer thickness more accurately performing wafer based on Accurate Determining carrys out the operation of calibration wafer polishing layer thickness.
Item described above includes not disclosed item before the applying date of the application, therefore, will not accept as unavoidable because being recorded in the technological project becoming background before being disclosed in the applying date.
Utility model content
Solve the technical problem that
This utility model is used for solving problem as above, and the purpose of this utility model is, detects exactly in chemical-mechanical polishing process to the polishing layer thickness distribution of the circumferencial direction of wafer.
Thus, the purpose of this utility model is, it is considered to polishing layer thickness distribution deviation and more accurately control the polishing layer thickness of wafer.
Technical scheme
In order to realize purpose as above, this utility model provides chemical mechanical polishing apparatus, as the chemical mechanical polishing apparatus of wafer, it is characterised in that including: polishing flat board, above polished pad cover, and carry out rotation；Rubbing head, to described polishing pad pressurization wafer, and rotates；First sensor, is arranged on described polishing flat board, and rotates together with described polishing flat board, when the downside through described wafer, receives the output signal of the polishing layer thickness information comprising described wafer；Sensor rotation position detection part, for the position of rotation of the described first sensor that detection and described polishing flat board rotate together with；Wafer position of rotation test section, for detecting the position of rotation of described wafer；And control portion, calculate and the described first sensor polishing layer thickness by described wafer corresponding to track time on the downside of described wafer, wherein, described first sensor is detected by described sensor rotation position detection part and described wafer position of rotation test section by track time on the downside of described wafer.
This is because the position of rotation of the position of rotation and wafer that can together detect first sensor grasps the position in the disk of the wafer polishing layer by first sensor mensuration, thus be accordingly used in the polishing layer thickness measuring the circumferencial direction to wafer, the position of rotation of described first sensor rotates and through the downside of wafer together carrying out with polishing pad, being measured the polishing layer thickness distribution of wafer, the position of rotation of described wafer carries out rotation to be polished wafer in chemical-mechanical polishing process.
Now, described sensor rotation position detection part has for detecting the extra sensor that described first sensor enters to the downside of wafer, therefore, from the beginning of the moment detected by described sensor, can consider to polish the rotary speed of flat board, detect the signal being received in first sensor from wafer polishing layer.Meanwhile, described sensor rotation position detection part is formed as the encoder of the position of rotation for detecting polishing flat board, such that it is able in wafer polishing layer, the Shi Ji etc. identical only by the rotating position signal described first sensor received signal being mapped in be used for detecting the encoder of the position of rotation of polishing flat board detects.
On the other hand, in chemical-mechanical polishing process, wafer also is located at the downside of rubbing head to be come and rubbing head together rotation, and the encoder that therefore, it can the position of rotation by being used for detecting rubbing head is configured to wafer position of rotation test section.
Thus, by the signal received by first sensor to identical time base mapping, for detecting the polishing rotating position signal of encoder of position of rotation of flat board, the rotating position signal of rubbing head, can grasp first sensor along which track of wafer polishing layer moves in a specific way, therefore can obtain wafer polishing layer by the polishing layer height of diverse location.
Now, described first sensor can be formed by any one that can detect in the eddy current sensor of wafer polishing layer thickness and optical sensor.
On the other hand, described control portion can draw the polishing layer thickness according to wafer position from receiving signal of first sensor, and in start the multiple measured values separating in the position of the first radius length to radial direction from the center of wafer, the polishing layer thickness distribution averagely calculating wafer of the one-tenth-value thickness 1/10 measured in the first radius length can be utilized within the time (such as, 1 second to 3 seconds) specified.
As it has been described above, the wafer polishing layer thickness profile calculated can obtain with the polishing layer one-tenth-value thickness 1/10 relative to radial direction equalization.Therefore, when the polishing layer thickness distribution of wafer imports the plus-pressure of different radii length of wafer in a different manner in order to arrive target thickness distribution (when terminating chemical-mechanical polishing process as the thickness of polishing layer or the thickness distribution of target), plus-pressure more accurately can be imported based on the wafer polishing layer thickness that the equalization distorted does not occurs, such that it is able to control with having more reliability so that it is arrive target thickness distribution.
I.e., the position of the radius length size identical relative to the spaced on center from wafer, carry out what the COMPREHENSIVE CALCULATING such as arithmetic mean or geometric average went out based on to the polishing layer one-tenth-value thickness 1/10 in mutually different two or more place circumferentially, the polishing layer one-tenth-value thickness 1/10 of equalization, control portion implements to reduce the control of the deviation of the polishing layer thickness of wafer.
Such as, in the case of described rubbing head is formed with the multiple pressure chamber that can independently control pressure in the upside of wafer, in detect the polishing layer thickness of equalization of the described wafer radius length region higher than other regions on the basis of target thickness by described control portion, higher air pressure is supplied to the pressure chamber being positioned on the upside of it, or in detect the polishing layer thickness of equalization of the described wafer radius length region less than other regions on the basis of target thickness by described control portion, to the air pressure that the pressure chamber's supply being positioned on the upside of it is lower, so that the polishing layer thickness distribution of wafer more accurately and rapidly arrives target thickness distribution.
Like this, pair radius length, not based on the polishing layer thickness of the wafer in the three unities, but to a radius length, based on the value of the equalization of the polishing layer thickness of the wafer in plural place, the polishing layer thickness distribution controlling into wafer arrives target thickness distribution, such that it is able to prevent the one-tenth-value thickness 1/10 depending on the locality of wafer polishing layer from controlling wafer polishing layer thickness mistakenly.
nullAnd，This utility model includes actuator，Described actuator is while regulating the plus-pressure of the adjustment disk contacted with the surface of described polishing pad，While making described polishing pad that modification to occur，Therefore，In detect the polishing layer thickness of equalization of the described wafer radius length region higher than other regions on the basis of target thickness by described control portion，Described polishing pad for this radius length region，Utilize described adjustment disk described polishing pad to be pressurizeed less than the stressed plus-pressure being applied to other regions，Or in detect the polishing layer thickness of equalization of the described wafer radius length region less than other regions on the basis of target thickness by described control portion，Described polishing pad for this radius length region，Utilize described adjustment disk described polishing pad to be pressurizeed higher than the stressed plus-pressure being applied to other regions，Such that it is able to the polishing layer thickness distribution more accurately controlling wafer becomes target thickness distribution.
Thus, for the polishing layer thickness of wafer, for a radius length, measure plural place, such that it is able to try to achieve the thickness of the circumferencial direction of wafer polishing layer, the average thickness of wafer polishing layer to a radius length thus can be obtained from the center of wafer.Therefore, utilize the average thickness of the wafer polishing layer calculated by this way to control wafer polishing layer thickness profile such that it is able to more accurately to control wafer polishing layer and make it arrive target thickness distribution.
I.e., preferably, for the first radius length separated to radius lateral direction from the center of described wafer, in the place circumferentially measured, the meansigma methods in the appointment time is utilized to calculate the polishing layer thickness distribution of equalization of radius length for described wafer.Wherein, meansigma methods includes all values of all average concept in arithmetic mean, geometric average etc. are added up.
Term " averagely " described in claims of this specification and utility model refers not only to plural value is carried out arithmetic mean, geometric average, and include the value that the maximum removed in measured value and any one value in minima are averaged, also include all values of the average concept being used in statistics.
And, term " position of rotation " described in claims of this specification and utility model represents the wafer in rotation or the anglec of rotation place residing for locality (such as, the place residing for first sensor) in polishing pad.Therefore, from center of rotation, ignore radial direction composition and be defined as the position of rotation of circumferencial direction.
Further, described in claims of this specification and utility model term " radius length " is then defined as from center of rotation to the length of radial direction.
And, term " polishing layer thickness " described in claims of this specification and utility model and similar term refer to the one-tenth-value thickness 1/10 in the relevant position (relevant radii length and corresponding angle of circumference) of wafer polishing layer.Therefore, it can, for a radius length, there is plural value.
Term " the polishing layer thickness of equalization " described in claims of this specification and utility model and similar term refer in a radius length of wafer, and the polishing layer thickness measured in plural place is implemented multiple one-tenth-value thickness 1/10s of the polishing layer that equalization obtains.Therefore, " the polishing layer thickness of equalization " and similar term have a value for a radius length.
The effect of utility model
As mentioned above, this utility model can obtain following effect: the position of rotation of the position of rotation and wafer that can together detect first sensor grasps the position in the disk of the wafer polishing layer by first sensor mensuration, therefore, a radius length for wafer, the polishing layer thickness of circumferencial direction can be measured in plural place, the position of rotation of described first sensor rotates and through the downside of wafer together carrying out with polishing pad, the polishing layer thickness distribution of wafer is measured, the position of rotation of described wafer carries out rotation to be polished wafer in chemical-mechanical polishing process.
And, this utility model has the advantages that for the polishing layer thickness of wafer, for a radius length, measure plural place, such that it is able to try to achieve the thickness of the circumferencial direction of wafer polishing layer, thus can obtain from the center of wafer the average thickness of wafer polishing layer to a radius length, and utilize the average thickness of the wafer polishing layer calculated by this way to control wafer polishing layer thickness profile such that it is able in the way of arriving target thickness distribution, more accurately control the thickness distribution of wafer polishing layer.
Accompanying drawing explanation
Fig. 1 is the top view of common chemical mechanical polishing apparatus.
Fig. 2 is the sectional view that the chemical mechanical polishing apparatus by Fig. 1 implements the wafer of polishing.
Fig. 3 is the front view of the structure of the chemical mechanical polishing apparatus illustrating an embodiment of the present utility model.
Fig. 4 is the top view of Fig. 3.
Fig. 5 illustrates by the first sensor figure through the path of the downside of the wafer of Fig. 3.
Fig. 6 is the sketch of the structure illustrating that the first sensor of Fig. 3 measures wafer polishing layer thickness.
Fig. 7 is the precedence diagram of the method for work of the chemical mechanical polishing apparatus illustrating an embodiment of the present utility model successively.
Fig. 8 is the half sectional view of the rubbing head of Fig. 2.
The explanation of reference
10: polishing flat board 11: polishing pad
20: rubbing head 21: barrier film
30: actuator 31: adjustment disk
40: slurry supply unit 50: first sensor
70: control portion W: wafer
Le: polishing layer C1, C2, C3, C4, C5: pressure chamber
Detailed description of the invention
Hereinafter, referring to the drawings the chemical mechanical polishing apparatus 100 of an embodiment of the present utility model is described in detail.Simply, during this utility model is illustrated, in order to make main idea of the present utility model definitely, by omitting, known function or structure are illustrated.
The chemical mechanical polishing apparatus 1 of an embodiment of the present utility model includes: polishing flat board 10, and polished pad 11 covers, and described polishing pad 11 burnishing surface with wafer W in the way of being polished contacts；Rubbing head 20, so that the state that wafer W is positioned at bottom surface is pressurizeed, and makes wafer W rotation；Actuator 30, has adjustment disk 31, thus is modified polishing pad 11, and described adjustment disk 31 contacts with the surface of polishing pad 11 with the state of pressurization, and carries out rotating 30r；Slurry supply unit 40, supplies slurry for the chemical polishing of wafer W；First sensor 50, is fixed on polishing flat board 10, rotates together with polishing pad 11, and receives first when by the bottom surface of wafer W and receive signal；First encoder E1, by the position of rotation of detection polishing flat board 10, detects the position of rotation of first sensor 50；Second encoder E2, by detecting the position of rotation of rubbing head 20, detects the position of rotation of wafer W；And control portion 70, receive the first reception signal received from first sensor 50 and the rotating position signal received from encoder E1, E2, detect the polishing layer thickness by diverse location (including thickness variation amount) of wafer W.
Described polishing flat board 10 carries out rotating driving with the state that upper side polished pad 11 covers.First sensor 50 can rotate together with polishing pad 11, and the control loop controlling portion 70 can also rotate together with polishing flat board 10, and can be come to the power supply of first sensor 50 applying and from the signal of first sensor 50 by known unit such as slip rings to the loop transfer that controls of non-rotating state.
On the other hand, in the case of first sensor 50 is formed as optical sensor, the upside of open first sensor 50 is needed in order to arrange the path passed light through, and in the case of first sensor 50 is formed as eddy current sensor, as long as making magnetic field pass through to be sufficient for, therefore, conductor can be formed as hindering the variform in magnetic field.Such as, in the case of being set to eddy current sensor, first sensor 50 could be arranged to be embedded in the form of polishing pad 11.
It is arranged on the anglec of rotation through the detection polishing flat board 10 that comes over time of the first encoder E1 on polishing flat board 10, and transmits to control portion 70.
As shown in Figure 8, described rubbing head 20 includes: body 25, from external reception rotary driving force thus carry out rotate drive；The barrier film 21 of flexible materials, combines with body 25 at the side 21a of the edge bending of the base plate being close to wafer W, and forms pressure chamber between described side 21a and described body 25；And back-up ring 26, in chemical-mechanical polishing process, polishing pad 11 is pressurizeed surrounding the form of the surrounding of barrier film 21, thus prevent wafer from departing from.
Wherein, at the base plate of barrier film 21, multiple next door 21b combine with body 25 with concentric ring form so that pressure chamber C1, C2, C3, C4, C5 are divided into multiple between barrier film base plate and body 25.And, air pressure applies to each pressure chamber C1, C2, C3, C4, C5 independently from air pressure supply unit 90, and the wafer area being pointed to the downside of each pressure chamber C1, C2, C3, C4, C5 pressurizes.Thus, when wafer W polishing layer thickness and uneven time, the air pressure applied to pressure chamber C1, C2, C3, C4, C5 is adjusted, so that the plus-pressure of the zones of different of wafer W there are differences, final guides polishing layer thickness to become required distribution.
Wherein, controlled portion 70 from air pressure supply unit 90 to the air pressure of each pressure chamber C1, C2, C3, C4, C5 supply by air pressure supply pipe 95 to control.
In order to detect the position of rotation of wafer W, it is provided with the second encoder E2 of the position of rotation of body 25 for measuring rubbing head 20.Owing to wafer W carries out rotation with the state being close to the barrier film base plate of flexible materials, therefore, it can centered by the reference position N of wafer W, detect position of rotation based on time process.Wherein, the most easily, the middle position of the otch N that will be formed in the outer peripheral face of wafer is set to the reference position of wafer W.
The the second encoder E2 being arranged on rubbing head 20 anglec of rotation ang detecting rubbing head 20 through coming over time, and transmit to control portion 70.
Described actuator 30 is to carry out rotating 30r drive to the pressurize state of adjustment disk 31 of polishing pad 11, and by arm, adjustment disk 30 is carried out circumnutation 30d, is modified as the environment that slurry can be made to flow into the surface of polishing pad 11.Wherein, the plus-pressure pressurizeing adjustment disk 31 is controlled portion 70 and is controlled, and adjustment disk 31 moves in the way of having the radial direction composition of polishing pad 11, while regulation plus-pressure, thus regulate the surface height deviation of polishing pad 11.
Described slurry supply unit 40 supplies slurry on polishing pad 11 so that slurry to flow into wafer W by being formed at the microflute on the surface of polishing pad 11.Thus, wafer polishing layer Le performs chemical polishing operation based on slurry.
Described first sensor 50 is fixed on polishing flat board 10 and is arranged to rotate together with polishing pad 11.The quantity being arranged on the first sensor 50 on polishing flat board 10 can only arrange 1, but can also arrange multiple separated by a distance the center from polishing pad 11 mutually different, each position fixed rotates, and in multiple paths, tries to achieve the distribution of wafer polishing layer Le.In this case, first sensor 50 receives the first reception signal So1 of the thickness information of the polishing layer Lw comprising wafer W within the period through the underside area of wafer W, and transmits to control portion 70.
Hereinafter, for facility, utilization is arranged on one from the center of polishing pad 11 first sensor 50 separated by a distance and illustrates to the structure detecting the thickness of wafer polishing layer Le.
Accompanying drawing is though it is shown that first sensor 50 is arranged in the structure of a position (formation path P) of the spaced on center from polishing pad 11 but it also may configure plural first sensor 50 from the center of polishing pad 11 to mutually different radius length.And, the path P of first sensor 50 is preferably to configure through the center of wafer W or in the way of the position close to center.Although accompanying drawing is exemplified with polishing plate shaped grooving, and arranges the structure of first sensor 50 in a fixed manner but it also may form groove in the bottom surface of polishing pad 11, it is also possible to formed groove by the degree of depth specified fix position at polishing flat board 10 and polishing pad 11 respectively.
According to an embodiment of the present utility model, first sensor 50 is formed as eddy current sensor (eddy current sensor).Although the upside of the eddy current first sensor 50 of Fig. 6 is formed as open form but it also may be set to the state buried underground by the polishing pad 11 as electrical insulator.Be formed as the first sensor 50 of eddy current sensor in known form, and apply eddy current signal towards electrical conductor in the way of the field region of above-below direction generating through the width 50E that specifies along sensor, thus receive the signal of the change of the resultant impedance of the resistance caused for the reflection thickness te of electric conductor and variation thereof as electric conductor and for measuring object or reactance etc. as receiving signal, measure thickness and the variation value thereof of the conductive layer of wafer W.
As shown in Figure 6, along with the rotation of polishing pad 11, first sensor 50 rotates together with, and applies the first signal Si, and receive at the first reception signal So changed along with the variation of the polishing layer thickness of wafer during the underside area of wafer W, thus transmit to control portion 70.
Hereinafter, with reference to Fig. 7, the operation principle of the present utility model constituted in the manner is described in detail.
First, during the chemical-mechanical polishing process (S110) performing wafer, described control portion 70 receives first rotating position signal (S120) of first sensor from the first encoder E1 for detecting the position of rotation of the first sensor 50 rotated together with polishing pad 11, meanwhile, the second rotating position signal (S130) equipped with the anglec of rotation ang information from the reference position N of wafer W is received from the second encoder E2 for the position of rotation ang of the wafer W rotated together with rubbing head 20 is detected.
Multiple signals owing to transmitting to control portion 70 are the signal obtained in identical time, therefore, it can by mapping to identical time base, obtain by first sensor 50 through track P1, P2, P3 (S140) of wafer W.
I.e., it is possible to detect from the sensor rotation position signalling that the first encoder E1 receives from first sensor 50 enter wafer W downside time to the downside of wafer W outside depart from time.The wafer rotating position signal that second encoder E2 of base receives in time being mapped in identical, if it is considered that first sensor 50 enters the variation of the time extremely position of rotation of the wafer W within the period that the outside of the downside of wafer W departs from of the downside of wafer W, it is possible to specific first sensor 50 is at track P1, P2, P3 of the lower side shifting of wafer W.
The angular velocity of rotation of polishing pad 11 is identical with the angular velocity of rotation of wafer W, and in the case of the reciprocating motion getting rid of wafer W, the track of the downside through wafer of first sensor 50 is designated as one all the time.But, different at the angular velocity of rotation of polishing pad 11 and the angular velocity of rotation of wafer W, or in the case of wafer W only carries out the reciprocating motion of appointment stroke in chemical-mechanical polishing process, as it is shown in figure 5, can be become multiple by track P1, P2, P3 of first sensor 50 process.
Furthermore, it is possible to try to achieve the polishing layer thickness distribution of the wafer W of each track P1, P2, P3 from the first reception signal So that first sensor 50 receives during the downside of wafer W.Therefore, it can try to achieve the polishing layer thickness distribution (S150) the left side of dummy line Lr that the reference position N from wafer W extends to center and right side respectively.
Such as, in the mensuration mode of conventional wafer polishing layer thickness, the most identical polishing layer thickness it is assumed to be in the first radius length R1, and actually, in the first radius length R1, multiple place S1L of left side L and right side R, S2L, S3L, S1R, S2R, S3R presents mutually different polishing layer thickness (wherein, left side and right side refer to that the polishing layer of wafer is asymmetric relative to the dummy line through center, not implying that must be left-right asymmetry to dummy line Lr through otch), therefore, as mentioned above, if polishing layer thickness is measured, just can two place S1L in the first radius length R1, S2L, S3L, S1R, S2R, S3R measures polishing layer thickness respectively.
But, in the first radius length R1, the polishing layer thickness measured at two places S1L, S2L, S3L, S1R, S2R, S3R respectively is different, thus, it is possible to obtain carried out the polishing layer thickness distribution of equalization by their meansigma methods.That is, the polishing layer thickness distribution of equalization is to a radius length, and the polishing layer one-tenth-value thickness 1/10 in multiple places is implemented equalization, is rendered as 1 value.Now, the polishing layer one-tenth-value thickness 1/10 that each two place S1R, S1L in the track P1 of first sensor 50 process for the first time measures can be implemented equalization and obtain the polishing layer thickness distribution of equalization, the time can also specified in the polishing layer thickness variation of consideration time per unit is (such as, 1 second to 3 seconds) in, the polishing layer one-tenth-value thickness 1/10 measured in the first sensor 50 multiple places in track P1, P2, P3 of n time is implemented equalization and obtains the polishing layer thickness distribution of equalization.
Thus, along with the Distributed Implementation equalization of left-right asymmetry polishing layer thickness is calculated the polishing layer thickness distribution according to radius length, it is possible to obtain more accurately measure the effect of polishing layer thickness distribution.
The most important thing is, as mentioned above, the thickness measurement by multiple polishing layers of the circumferencial direction of each radius length if based on wafer W implements equalization, and the polishing layer thickness distribution of the equalization being designated as a value according to radius length is obtained by the different time periods, just can utilize the polishing layer thickness distribution of equalization, in the way of making the polishing layer thickness distribution of wafer W arrive more rapidly target thickness distribution, be corrected the control (S160) of polishing layer difference in thickness.
In other words, in the past because of left-right asymmetry polishing layer difference in thickness during performing chemical-mechanical polishing process, according to circumstances, on the basis of big value, polished amount is controlled bigger, it is also possible to according to circumstances, on the basis of little value, polished amount is controlled less, thus there is the problem being difficult to arrive target thickness distribution because of the control of uneven polished amount.But, as it has been described above, utilize the polishing layer thickness distribution of equalization to arrive target thickness distribution to control wafer polishing layer thickness profile, such that it is able to more quickly and accurately make wafer polishing layer thickness profile arrive target thickness distribution.
Such as, described control portion 70 controls as follows: target polished layer thickness profile and target thickness distribution to the equalization of described wafer compare, and the plus-pressure imported to wafer W is imported in a different manner according to the radius length of wafer, control into and make the thickness distribution of wafer become identical with target thickness distribution.I.e., when the polishing layer thickness distribution of wafer import in a different manner to arrive target thickness distribution (when terminating chemical-mechanical polishing process as the thickness of polishing layer or the thickness distribution of target) wafer by the plus-pressure of different radii length time, the thickness of wafer polishing layer based on the equalization do not distorted imports plus-pressure more accurately so that become to have more reliability for arriving the control of target thickness distribution.
Such as, in the case of target thickness is distributed as the thickness distribution of overall uniform polishing layer, if the target polished layer thickness of the equalization in the first radius length that the very first time of chemical-mechanical polishing process is measured is more than the target polished layer thickness of the equalization in the second radius length, it is accomplished by the second time later, the plus-pressure controlling in the first radius length to pressurize wafer is more than in the second radius length the plus-pressure pressurizeing wafer (wherein, time can be first sensor through wafer time once, it can also be first sensor time through wafer twice in the time range specified).
Therefore, control portion 70 is controlled in the second time in the way of making the pressure being positioned at the pressure chamber of the upside of the wafer corresponding with the first radius length pressure more than the pressure chamber of the upside being positioned at the wafer corresponding with the second radius length.Like this, the polishing layer thickness distribution of the equalization according to radius length according to the wafer measured in the time before, control the plus-pressure pressurizeing wafer, it is hereby achieved that make the polishing layer thickness distribution of wafer can the most more accurately arrive the effect that the target thickness terminating the be considered as target of time point of chemical-mechanical polishing process is distributed the time later.
On the other hand, the polishing layer thickness of wafer depends not only upon the plus-pressure from rubbing head 20 of the wafer that pressurizes downwards, and the height tolerance of the polishing pad 11 contacted because of wafer polishing layer and make the polished amount of time per unit change.Therefore, described control portion 70 can control parallel or the most as follows with the control of rubbing head: compares the target polished layer thickness profile of the equalization of described wafer with target thickness distribution, thus according to the radius length of wafer, and import the plus-pressure that polishing pad 11 is pressurizeed according to position in a different manner, thus control into the thickness distribution making wafer and become identical with target thickness distribution.
I.e., in the very first time, compared to target polished layer thickness, if detecting, the polishing layer thickness of equalization in the first radius length of described wafer is more than the polishing layer thickness of equalization in the second radius length, then for the described polishing pad through the first radius length, make adjustment disk with lower plus-pressure 30F, polishing pad 11 be pressurizeed, higher maintain the apparent height of polishing pad 11, thus increase the polished amount of the time per unit in the first radius length.Equally, in the very first time, compared to target polished layer thickness, if detecting, the polishing layer thickness of equalization in the first radius length of described wafer is less than the polishing layer thickness of equalization in the second radius length, then for the described polishing pad through the first radius length, make adjustment disk with higher plus-pressure 30F, polishing pad 11 be pressurizeed, maintain the apparent height of polishing pad 11 lower, thus reduce the polished amount of the time per unit in the first radius length.
Like this, control portion 70 can control to adjust device 30 by polishing layer one-tenth-value thickness 1/10 based on equalization, and control the plus-pressure 30F that polishing pad 11 is pressurizeed, it is hereby achieved that the effect being more accurately controlled in the way of making the polishing layer thickness distribution of wafer become target thickness distribution.
The chemical mechanical polishing apparatus 100 of the embodiment of the present utility model constituted in the manner can obtain following effect: owing to can grasp the wafer polishing layer measured by first sensor 50 track P1, P2, P3 in disk in each time, therefore, for radius length R1 of wafer W, can be at plural place S1L, S2L, S3L, S1R, S2R, S3R mensuration polishing layer thickness to circumferencial direction.And, this utility model has the advantages that for a radius length, the polishing layer thickness of wafer is measured in plural place, thus calculate the polishing layer thickness relative to radius length equalization, and use this to control the polishing layer thickness distribution of wafer, the most more accurately arrive target thickness distribution such that it is able to control into.
Above, although by preferred embodiment, this utility model carried out exemplary explanation, but this utility model is not limited to this specific embodiment, suitable change can be carried out in category described in this utility model claims.
Claims (7)
1. a chemical mechanical polishing apparatus, as the chemical mechanical polishing apparatus of wafer, it is characterised in that including:
Polishing flat board, above polished pad cover, and carry out rotation；
Rubbing head, to described polishing pad pressurization wafer, and rotates；
First sensor, is arranged on described polishing flat board, and rotates together with described polishing flat board, when the downside through described wafer, receives the output signal of the polishing layer thickness information comprising described wafer；
Sensor rotation position detection part, for the position of rotation of the described first sensor that detection and described polishing flat board rotate together with；
Wafer position of rotation test section, for detecting the position of rotation of described wafer；And
Control portion, calculate and the described first sensor polishing layer thickness by described wafer corresponding to track time on the downside of described wafer, wherein, described first sensor is detected by described sensor rotation position detection part and described wafer position of rotation test section by track time on the downside of described wafer.
Chemical mechanical polishing apparatus the most according to claim 1, it is characterised in that
Described sensor rotation position detection part is, for detecting the encoder of the position of rotation of described polishing flat board.
Chemical mechanical polishing apparatus the most according to claim 1, it is characterised in that
Described wafer position of rotation test section is, for detecting the encoder of the position of rotation of described rubbing head.
Chemical mechanical polishing apparatus the most according to claim 1, it is characterised in that
Described first sensor is, any one in eddy current sensor and optical sensor.
5. according to the chemical mechanical polishing apparatus described in any one in Claims 1-4, it is characterised in that
Described rubbing head has multiple pressure chamber in the upside of described wafer.
6. according to the chemical mechanical polishing apparatus described in any one in Claims 1-4, it is characterised in that
Also including actuator, the plus-pressure of the adjustment disk that the regulation of described actuator contacts with the surface of described polishing pad, while being modified described polishing pad.
7. according to the chemical mechanical polishing apparatus described in any one in Claims 1-4, it is characterised in that
The angular velocity of described rubbing head and the angular velocity of described polishing pad are different.
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| KR10-2015-0027687 | 2015-02-27 | ||
| KR1020150027687A KR101625459B1 (en) | 2015-02-27 | 2015-02-27 | Chemical mechanical polishing apparatus and method thereof |
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| CN201520776912.8U Active CN205465666U (en) | 2015-02-27 | 2015-10-08 | Chemical mechanical polishing device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110355684A (en) * | 2018-03-26 | 2019-10-22 | 凯斯科技股份有限公司 | Substrate board treatment |
| CN112692717A (en) * | 2019-10-03 | 2021-04-23 | 株式会社荏原制作所 | Substrate polishing apparatus, film thickness mapping manufacturing method, and substrate polishing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003334757A (en) * | 2002-05-14 | 2003-11-25 | Sony Corp | Polishing quantity monitoring method and polishing device using the method |
| JP5705093B2 (en) * | 2011-11-21 | 2015-04-22 | 株式会社荏原製作所 | Polishing end point detection method and polishing apparatus |
| KR101459269B1 (en) * | 2013-07-05 | 2014-11-07 | 주식회사 케이씨텍 | Chemical mechanical polishing method and apparatus using same |
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- 2015-02-27 KR KR1020150027687A patent/KR101625459B1/en active IP Right Grant
- 2015-10-08 CN CN201520776912.8U patent/CN205465666U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110355684A (en) * | 2018-03-26 | 2019-10-22 | 凯斯科技股份有限公司 | Substrate board treatment |
| CN110355684B (en) * | 2018-03-26 | 2022-05-13 | 凯斯科技股份有限公司 | Substrate processing apparatus |
| CN112692717A (en) * | 2019-10-03 | 2021-04-23 | 株式会社荏原制作所 | Substrate polishing apparatus, film thickness mapping manufacturing method, and substrate polishing method |
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