CN205429121U - Compound range upon range of photonic crystal band elimination filter of terahertz wave section - Google Patents
Compound range upon range of photonic crystal band elimination filter of terahertz wave section Download PDFInfo
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- CN205429121U CN205429121U CN201620290721.5U CN201620290721U CN205429121U CN 205429121 U CN205429121 U CN 205429121U CN 201620290721 U CN201620290721 U CN 201620290721U CN 205429121 U CN205429121 U CN 205429121U
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Abstract
The utility model relates to a compound range upon range of photonic crystal band elimination filter of terahertz wave section, its characterized in that: this wave filter includes and covers the range upon range of photonic crystal structure of the complex of forming by the range upon range of subsides of multilayer photonic crystal structure, and every layer of photonic crystal structure includes the base plate, pastes to be covered at the positive circular monocrystalline silicon piece array of base plate, and every layer of photonic crystal structure is 5 lines 5 totally 25 structures that circular monocrystalline silicon piece interval distribution formed on the substrate surface. An object of the utility model is to provide a stop band scope is near 1THz, and stop band frequency width reaches more than the 0.05THz, and the biggest decay of passband is less than 3dB, and the minimum decay of stop band is greater than 40dB's compound range upon range of photonic crystal band elimination filter of terahertz wave section.
Description
Technical field
This utility model relates to a kind of terahertz wave band composite laminate photonic crystal band elimination filter.
Background technology
Terahertz (Terahertz, THz) electromagnetic wave refers to that frequency is 1012Electromagnetic wave near Hz, in recent years, the mechanism of production of terahertz emission, detection and application technical research have obtained flourish.With the electromagnetic wave phase ratio of its all band, THz wave has a following salient feature:
1. the photon energy of the 98% of Big Bang transmitting is all located at the frequency range of Terahertz；
2. utilize various molecule can complete environmental monitoring and air pollution monitoring at unique spectral line of terahertz wave band；
3. the photon energy of THz wave is relatively low, harmless to biological tissue, is suitable for biological tissue is carried out biopsy；
4., if THz wave can be applied in the communications field, the channel capacity of existing radio communication will be greatly increased.
These characteristics of terahertz electromagnetic wave determine it and have broad application prospects in multiple fields.THz wave transmission and the processing means of excellent performance is badly in need of in the application of THz wave.Band elimination filter is the wave filter that the frequency component of some particular range of input signal can decay to extremely low level, it is possible to suppress spuious output and useless parasitic passband, is widely used in THz wave transmission and processing system.Existing Terahertz equipment for the performance requirement of terahertz wave band band elimination filter is: stopband range is near 1THz, and stop-band frequency width reaches more than 0.05THz, and passband maximum attenuation is less than 3dB, and minimum attenuation in stop band is more than 40dB.
Summary of the invention
The purpose of this utility model is to provide a kind of stopband range near 1THz, and stop-band frequency width reaches more than 0.05THz, and passband maximum attenuation is less than 3dB, the minimum attenuation in stop band terahertz wave band composite laminate photonic crystal band elimination filter more than 40dB.
The purpose of this utility model is achieved through the following technical solutions: a kind of terahertz wave band composite laminate photonic crystal band elimination filter, it is characterized in that: this wave filter includes being folded by multilamellar photonic crystal structure layer pasting the composite laminate photon crystal structure formed, every layer of photon crystal structure includes substrate, is covered in the circular single crystal silicon chip arrays of substrate front side, and every layer of photon crystal structure is that 5 row 5 arrange totally 25 circular single crystal silicon chip structures formed on the surface of the substrate spaced apart.
Preferably, described composite laminate photon crystal structure is folded to paste by 5 layers of photonic crystal structure layer and is formed.
Preferably, every layer of photon crystal structure is divided into 5 25 little square area of row 5 row, and the size of each little square area is 60 μ m 60 μm, and the center of each little square area is covered with the diameter R circular single crystal silicon chip less than the little square area length of side.
Preferably, the diameter R that 5 row 5 in every layer of photon crystal structure arrange totally 25 circular single crystal silicon chips is identical, the diameter R of each circular single crystal silicon chip in ground floor photon crystal structure is 58 μm, the diameter R of each circular single crystal silicon chip in second layer photon crystal structure is 56 μm, the diameter R of each circular single crystal silicon chip in third layer photon crystal structure is 54 μm, the diameter R of each circular single crystal silicon chip in the 4th layer of photon crystal structure is 52 μm, and the diameter R of each circular single crystal silicon chip in layer 5 photon crystal structure is 50 μm.
Preferably, it is provided with signal input point on the circular single crystal silicon chip (the circular single crystal silicon chip in the ground floor photon crystal structure lower left corner) of described composite laminate photon crystal structure fifth line first row in ground floor photon crystal structure, in ground floor photon crystal structure, is provided with signal output point on the circular single crystal silicon chip (the circular single crystal silicon chip in the ground floor photon crystal structure upper right corner) of the first row the 5th row.
Preferably, described substrate is terahertz wave band wave transparent ceramic substrate, and its relative dielectric constant is preferably 9 ± 5%.
Preferably, the relative dielectric constant of described circular single crystal silicon chip is preferably 11 ± 5%.
Preferably, the size of substrate of described 5 layers of photon crystal structure is the most equal, and the shape of every laminar substrate is preferably rectangle, and size is 300 μm ± 5 μ m 300 μm ± 5 μm.
Preferably, the substrate thickness of every layer of photon crystal structure is the most equal, and the thickness of every laminar substrate is 10 μm ± 1 μm.
For prior art, the utility model has the advantage of: the stock that can be operated in low-loss single-crystal semiconductor dielectric material of terahertz wave band and ceramic material as terahertz wave band photon crystal structure can be used in the design, single-crystal semiconductor material is allowed periodically to be arranged in ceramic material, form stopband, the electromagnetic wave in stopband that falls can not pass through photon crystal structure completely, and the electromagnetic wave outside stopband through during photon crystal structure almost without decay.We use composite laminate technology to improve the performance of photonic crystal further, in each layer of photon crystal structure, the diameter of circular single crystal silicon chip is different, and the frequency range of the stopband therefore formed is different, the stopband superposition that multiple frequencies are close, the stopband of meeting forming frequency wider range.Band elimination filter based on the design of composite laminate photon crystal structure has stop-band frequency width compared with the advantage such as big, pass band damping is little, stopband attenuation is big.
Accompanying drawing explanation
Fig. 1 is every layer of photon crystal structure schematic diagram.
Fig. 2 is the schematic cross-section of composite laminate photon crystal structure.
Fig. 3 is the amplitude-frequency characteristic performance map of structure shown in Fig. 1, Fig. 2, abscissa in figure represents frequency Frequency (GHz), and vertical coordinate represents amplitude-frequency characteristic Theamplitudefrequencycharacteristicsoffilter (dB) of wave filter.
Label declaration: 1 substrate, 2 circular single crystal silicon chips.
Detailed description of the invention
Below in conjunction with Figure of description and embodiment, this utility model content is described in detail:
A kind of terahertz wave band composite laminate photonic crystal band elimination filter, it includes being folded by multilamellar photonic crystal structure layer pasting the composite laminate photon crystal structure formed, every layer of photon crystal structure includes substrate 1, is covered in the circular single crystal silicon chip arrays of substrate front side, and described every layer of photon crystal structure is to be arranged totally 25 circular single crystal silicon chips 2 by 5 row 5 to be distributed in substrate 1 surface composition according to 5 × 5 array periodicity.
Described composite laminate photon crystal structure is folded to paste by 5 layers of photonic crystal structure layer and is formed.
Described every layer of photon crystal structure is divided into 5 25 little square area of row 5 row, and the size of each little square area is 60 μ m 60 μm, and the center of each little square area is covered with the diameter R circular single crystal silicon chip 2 less than the square length of side.
The diameter R that 5 row 5 in described every layer of photon crystal structure arrange totally 25 circular single crystal silicon chips 2 is identical, the diameter R of each circular single crystal silicon chip 2 in ground floor photon crystal structure is 58 μm, the diameter R of each circular single crystal silicon chip 2 in second layer photon crystal structure is 56 μm, the diameter R of each circular single crystal silicon chip 2 in third layer photon crystal structure is 54 μm, the diameter R of each circular single crystal silicon chip 2 in the 4th layer of photon crystal structure is 52 μm, and the diameter R of each circular single crystal silicon chip 2 in layer 5 photon crystal structure is 50 μm.
We use low-loss single-crystal semiconductor dielectric material and ceramic material as the stock designing and producing terahertz wave band photon crystal structure.At terahertz wave band, silicon medium absorption coefficient is relatively low, substantially 0.04cm-1, dielectric constant is about 11, is well suited as making the semi-conducting material of photon crystal structure.The terahertz wave band wave-transmitting ceramic material that we select, in the range of dielectric constant 6-100, is less than 0.005 to the loss angle tangent of terahertz wave signal, and this ceramic material is well suited as the base material of terahertz wave band device.
Photon crystal structure is made up of the periodically arrangement in another kind of medium of a kind of medium.We allow being arranged in ceramic material of monocrystal silicon medium period, form photon crystal structure.Reasonable adjusting monocrystal silicon medium and the arrangement mode of ceramic material, allow the stop band frequency range that photon crystal structure is formed near 1THz.We use composite laminate technology, in each layer of photon crystal structure, the diameter of circular single crystal silicon chip is different, the frequency range of the stopband formed is different, the stopband superposition that multiple frequencies are close, the stopband of meeting forming frequency wider range, the stop-band frequency width of the terahertz wave band composite laminate photonic crystal band elimination filter that final design completes is up to more than 0.05THz.
It is provided with signal input point 3 on the circular single crystal silicon chip 2 (the circular single crystal silicon chip 2 in the ground floor photon crystal structure lower left corner) of described composite laminate photon crystal structure fifth line first row in ground floor photon crystal structure, in ground floor photon crystal structure, is provided with signal output point 4 on the circular single crystal silicon chip 2 (the circular single crystal silicon chip 2 in the ground floor photon crystal structure upper right corner) of the first row the 5th row.
Described substrate 1 is terahertz wave band wave transparent ceramic substrate, and its relative dielectric constant is preferably 9 ± 5%.
The relative dielectric constant of described circular single crystal silicon chip is preferably 11 ± 5%.
Substrate 1 size of described 5 layers of photon crystal structure is the most equal, and the shape of every laminar substrate 1 is preferably rectangle, and size is 300 μm ± 5 μ m 300 μm ± 5 μm.
Substrate 1 thickness of described 5 layers of photon crystal structure is the most equal, and the thickness of every laminar substrate 1 is 10 μm ± 1 μm.
An of the present utility model specific embodiment be given below:
Seeing Fig. 1 and Fig. 2, the present embodiment is folded by 5 layers of photonic crystal structure layer and is pasted the composite laminate photon crystal structure formed, and as shown in fig. 1, the cross section of composite laminate photon crystal structure is as shown in Figure 2 for every layer of photon crystal structure.Every layer of photon crystal structure includes substrate, is covered in the circular single crystal silicon chip arrays of substrate front side.Every layer of photon crystal structure is divided into 5 25 little square area of row 5 row, and the size of each little square area is 60 μ m 60 μm, and the center of each little square area is covered with the diameter R circular single crystal silicon chip less than the square length of side.The diameter R that 5 row 5 in every layer of photon crystal structure arrange totally 25 circular single crystal silicon chips is identical, the diameter R of each circular single crystal silicon chip in ground floor photon crystal structure is 58 μm, the diameter R of each circular single crystal silicon chip in second layer photon crystal structure is 56 μm, the diameter R of each circular single crystal silicon chip in third layer photon crystal structure is 54 μm, the diameter R of each circular single crystal silicon chip in the 4th layer of photon crystal structure is 52 μm, and the diameter R of each circular single crystal silicon chip in layer 5 photon crystal structure is 50 μm.Signal input point is arranged on the circular single crystal silicon chip in the ground floor photon crystal structure lower left corner, and signal output point is arranged on the circular single crystal silicon chip in the ground floor photon crystal structure upper right corner.
Substrate is terahertz wave band wave transparent ceramic substrate, and its relative dielectric constant is 9 ± 5%.The relative dielectric constant of circular single crystal silicon chip is 11 ± 5%.The size of substrate of 5 layers of photon crystal structure is the most equal, every laminar substrate be shaped as rectangle, size is 300 μm ± 5 μ m 300 μm ± 5 μm.The substrate thickness of 5 layers of photon crystal structure is the most equal, and the thickness of every laminar substrate is 10 μm ± 1 μm.
See Fig. 3, Fig. 3 and give the amplitude-frequency characteristic performance map of the present embodiment.From figure 3, it can be seen that measured result shows, when amplitude-frequency characteristic is less than-40dB, the stop band frequency range of this band elimination filter is 0.957～1.073THz, stop-band frequency width is 0.116THz, and passband amplitude-frequency characteristic minima is-1.94dB, and stopband amplitude-frequency characteristic minima is-52dB.Measured result shows, this band elimination filter disclosure satisfy that the existing Terahertz equipment performance requirement for terahertz wave band band elimination filter.
Comparing with the conventional band elimination filter for terahertz wave band, this utility model has advantage highlighted below and significant effect: stop-band frequency width reaches 0.116THz, far above the traditional performance requirement of stop-band frequency width 0.05THz；Passband amplitude-frequency characteristic minima is-1.94dB, i.e. passband maximum attenuation is 1.94dB, is better than the traditional performance requirement less than 3dB of the passband maximum attenuation；Stopband amplitude-frequency characteristic minima be-52dB, i.e. minimum attenuation in stop band be 52dB, be far superior to minimum attenuation in stop band more than the traditional performance requirement of 40dB.This money band elimination filter is provided simultaneously with the advantages such as stop-band frequency width is big, pass band damping is little, stopband attenuation is big, has broad application prospects in THz wave transmission and process field.
Claims (10)
1. a terahertz wave band composite laminate photonic crystal band elimination filter, it is characterized in that: this wave filter includes being folded by multilamellar photonic crystal structure layer pasting the composite laminate photon crystal structure formed, every layer of photon crystal structure includes substrate, is covered in the circular single crystal silicon chip arrays of substrate front side, and every layer of photon crystal structure is that 5 row 5 arrange totally 25 circular single crystal silicon chip structures formed on the surface of the substrate spaced apart.
Terahertz wave band composite laminate photonic crystal band elimination filter the most according to claim 1, it is characterized in that: described every layer of photon crystal structure is divided into 5 25 little square area of row 5 row, the size of each little square area is 60 μ m 60 μm, and the center of each little square area is covered with the diameter R circular single crystal silicon chip less than the little square area length of side.
Terahertz wave band composite laminate photonic crystal band elimination filter the most according to claim 2, it is characterised in that: described composite laminate photon crystal structure is folded to paste by 5 layers of photonic crystal structure layer and is formed.
Terahertz wave band composite laminate photonic crystal band elimination filter the most according to claim 3, it is characterized in that: the diameter R that 5 row 5 in every layer of photon crystal structure arrange totally 25 circular single crystal silicon chips is identical, the diameter R of each circular single crystal silicon chip in ground floor photon crystal structure is 58 μm, the diameter R of each circular single crystal silicon chip in second layer photon crystal structure is 56 μm, the diameter R of each circular single crystal silicon chip in third layer photon crystal structure is 54 μm, the diameter R of each circular single crystal silicon chip in the 4th layer of photon crystal structure is 52 μm, the diameter R of each circular single crystal silicon chip in layer 5 photon crystal structure is 50 μm.
Terahertz wave band composite laminate photonic crystal band elimination filter the most according to claim 1, it is characterized in that: in ground floor photon crystal structure, be provided with signal input point on the circular single crystal silicon chip of fifth line first row, in ground floor photon crystal structure, be provided with signal output point on the circular single crystal silicon chip of the first row the 5th row.
6. according to the terahertz wave band composite laminate photonic crystal band elimination filter described in claim 1,2,3,4 or 5, it is characterised in that: described substrate is terahertz wave band wave transparent ceramic substrate.
Terahertz wave band composite laminate photonic crystal band elimination filter the most according to claim 6, it is characterised in that: the relative dielectric constant of described terahertz wave band wave transparent ceramic substrate is 9 ± 5%.
8. according to the terahertz wave band composite laminate photonic crystal band elimination filter described in claim 1,2,3,4 or 5, it is characterised in that: the relative dielectric constant of described circular single crystal silicon chip is 11 ± 5%.
9. according to the terahertz wave band composite laminate photonic crystal band elimination filter described in claim 1,2,3,4 or 5, it is characterized in that: the size of substrate of every layer of photon crystal structure is the most equal, every laminar substrate be shaped as rectangle, size is 300 μm ± 5 μ m 300 μm ± 5 μm.
10. according to the terahertz wave band composite laminate photonic crystal band elimination filter described in claim 1,2,3,4 or 5, it is characterised in that: the substrate thickness of every layer of photon crystal structure is the most equal, and the thickness of every laminar substrate is 10 μm ± 1 μm.
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| CN201620290721.5U CN205429121U (en) | 2016-04-08 | 2016-04-08 | Compound range upon range of photonic crystal band elimination filter of terahertz wave section |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106840386A (en) * | 2017-01-05 | 2017-06-13 | 北京环境特性研究所 | Double-deck photonic crystal 0.325THz quality factor resonators |
| CN108089251A (en) * | 2018-01-24 | 2018-05-29 | 厦门大学嘉庚学院 | Terahertz wave band quadruple photonic crystal bandstop filter |
| CN110048201A (en) * | 2019-05-24 | 2019-07-23 | 中国计量大学上虞高等研究院有限公司 | Multiband Terahertz bandstop filter |
-
2016
- 2016-04-08 CN CN201620290721.5U patent/CN205429121U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106840386A (en) * | 2017-01-05 | 2017-06-13 | 北京环境特性研究所 | Double-deck photonic crystal 0.325THz quality factor resonators |
| CN108089251A (en) * | 2018-01-24 | 2018-05-29 | 厦门大学嘉庚学院 | Terahertz wave band quadruple photonic crystal bandstop filter |
| CN108089251B (en) * | 2018-01-24 | 2023-05-12 | 厦门大学嘉庚学院 | Terahertz wave band quadruple photonic crystal band-stop filter |
| CN110048201A (en) * | 2019-05-24 | 2019-07-23 | 中国计量大学上虞高等研究院有限公司 | Multiband Terahertz bandstop filter |
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