CN205377821U - Switchgear - Google Patents
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- CN205377821U CN205377821U CN201521084369.1U CN201521084369U CN205377821U CN 205377821 U CN205377821 U CN 205377821U CN 201521084369 U CN201521084369 U CN 201521084369U CN 205377821 U CN205377821 U CN 205377821U
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Abstract
The utility model relates to a switchgear, including control end, first end, second end and the first transistor. Switchgear's control end is connected to the control electrode of the first transistor, and switchgear's first end is connected to the first ploe of the first transistor, and switchgear's second end is connected to the second ploe of the first transistor. Switchgear still includes first electric capacity and voltage generation circuit. The first end and the control electrode of the first transistor of first electric capacity are connected, second termination low level voltage. Voltage generation circuit to the first end of first electric capacity provide with the on -state voltage's of the first transistor the voltage that polarity is opposite. According to the utility model discloses an embodiment plays the cushioning effect to switchgear's control voltage. When switchgear received effectual control signal, the first transistor switched on gradually, and the electric current that passes through is crescent. Consequently, it is crescent through the electric current of switch, guaranteed that the voltage at switch both ends can not produce abruptly pressure drop, can effectively protect circuit component.
Description
Technical field
This utility model relates to on-off circuit technical field, particularly relates to transistor switching circuit technical field.
Background technology
At present, transistor is widely used in on-off circuit.Fig. 1 is the circuit diagram of a kind of switching device of the prior art.As it is shown in figure 1, simply use single transistor namely may be constructed contactless switching circuit of power supply.This switching device includes controlling end CP, the first end PI, the second end PO and the first transistor T1.The control end CP, the first end PI of the first pole connecting switch of the first transistor, the second end PO of the second pole connecting switch of the first transistor that control pole connecting switch of the first transistor T1.When applying to make the first transistor T1 voltage turned on to the control end CP of switching device, the first transistor T1 turns on, the circuit of the circuit of connecting switch the first end PI side and the second end PO side of switching device.Switching device the first end PI can connect power supply, and the second end PO of switching device can connect the component of needs power supply.
In the device shown in Fig. 1, during the first transistor T1 conducting, power supply export and pass through the electric current increase of the first transistor T1.Owing to the electric current of power supply output is to increase moment, current instantaneous value is well over the exportable maximum current of power supply.Once so, the output voltage of power supply can reduce suddenly, the voltage applied for component produces vibration, consequently, it is possible to cause component fault.When component comprises computer system, it is possible to can cause that computer system restarts, and also result in internal storage data loss in computer system.
Solution conventional at present includes improving source current fan-out capability or adding energy storage or filter element at the first end PI of switching device and/or the second end PO of switching device.Raising source current fan-out capability needs to improve for power supply, relatively costly, and high current output capability is not required to when normal operation, causes waste.And add the mode of energy storage or filter element at the second end PO of the first end PI of switching device or switching device and can not eliminate the phenomenon of electric power outputting current instantaneous variation, the instantaneous variation impact for component of electric power outputting current can only be reduced as far as possible.Further, the electric current owing to exporting for power supply carries out energy storage or filtering, it is necessary to energy storage that serviceability is higher or filter element, which increases circuit cost.
Utility model content
According to an aspect of the present utility model, switching device can include controlling end, the first end, the second end and the first transistor.The first transistor control pole can the control end of connecting switch, the first pole of the first transistor can the first end of connecting switch, the second pole of the first transistor can the second end of connecting switch.Wherein, switching device may also include the first electric capacity and voltage generation circuit.First end of the first electric capacity can be connected with the control pole of the first transistor, and the second end can connect low level voltage.Voltage generation circuit can provide the opposite polarity voltage of the conducting voltage with the first transistor to the first end of the first electric capacity.
According to embodiment of the present utility model, the control voltage for switching device plays cushioning effect.When switching device receives effective control signal, the first transistor is gradually turned on, and the electric current passed through is gradually increased.Therefore, the electric current by switching is gradually increased, it is ensured that the voltage of switch ends will not produce unexpected pressure drop, it is possible to effectively protects component.Particularly when the circuit being connected with switching device includes capacitive element, when the first transistor is gradually turned on, the electric current passed through can charge to capacitive element in advance, without affecting the state of other element (such as, IC chip) in circuit.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme of embodiment of the present utility model, the accompanying drawing of embodiment will be briefly described below, it should be appreciated that figures described below merely relates to embodiments more of the present utility model, but not to restriction of the present utility model, wherein:
Fig. 1 is the circuit diagram of a kind of switching device of the prior art；
Fig. 2 is the electrical block diagram of the switching device according to embodiment of the present utility model；
Fig. 3 is an illustration for first schematic circuit diagram of the concrete structure of the switching device of embodiment illustrated in fig. 2；
Fig. 4 is an illustration for second schematic circuit diagram of the concrete structure of the switching device of embodiment illustrated in fig. 2；
Fig. 5 is an illustration for the 3rd schematic circuit diagram of the concrete structure of the switching device of embodiment illustrated in fig. 2.
Detailed description of the invention
In order to make the purpose of embodiment of the present utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the technical scheme of embodiment of the present utility model is carried out clear, complete description.Obviously, described embodiment is a part of embodiment of the present utility model, rather than whole embodiments.Based on described embodiment of the present utility model, the every other embodiment that those skilled in the art obtain under the premise without creative work, also belong to the scope of this utility model protection.
Fig. 2 is the electrical block diagram of the switching device according to embodiment of the present utility model.As in figure 2 it is shown, compared with the on-off circuit shown in Fig. 1, the switching device in the present embodiment may also include the first electric capacity C1 and voltage generation circuit VS.First end of the first electric capacity C1 may be connected to the control pole (grid) of the first transistor T1, and second end of the first electric capacity C1 may be connected to low level voltage, for instance, ground connection.Voltage generation circuit VS can provide the opposite polarity voltage of conducting voltage with the first transistor for first end of the first electric capacity C1.
If the first transistor T1 uses P type metal-oxide-semiconductor, then making the first transistor T1 conducting voltage turned on is low level voltage.In this case, voltage generation circuit VS generates high level voltage, and is supplied to first end of the first electric capacity C1.If the first transistor T1 uses N-type metal-oxide-semiconductor, then making the first transistor T1 conducting voltage turned on is high level voltage.In this case, voltage generation circuit VS generates low level voltage, and is supplied to first end of the first electric capacity C1.
Use P type metal-oxide-semiconductor for the first transistor T1 below, the work process of the switching device of the present embodiment is described.In this example, voltage generation circuit VS generates high level voltage, and is supplied to first end of the first electric capacity C1.First end of switching device is connected with power supply, and the second end may be connected to other element.When applying high level voltage at the control end CP of switching device, the first transistor T1 ends, and switching device is off.When controlling end CP and applying low level voltage, owing to the voltage of first end of the first electric capacity C1 is high level voltage, therefore, the first electric capacity C1 starts electric discharge, and the voltage of its first end is gradually lowered.Correspondingly, the voltage in the control pole of the first transistor T1, also with the discharge process of the first electric capacity C1, is gradually lowered as low level from high level.So, the first transistor T1 is gradually turned on, and switching device is in closure state.
Additionally, if the first transistor T1 uses N-type metal-oxide-semiconductor, then its conducting voltage is high level voltage.Voltage generation circuit VS generates low level voltage in this case, and is supplied to first end of the first electric capacity C1.When becoming high level voltage at the voltage controlling end CP applying of switching device from low level voltage, owing to the voltage of first end of the first electric capacity C1 is low level voltage, therefore, the first electric capacity C1 starts to charge up.The voltage of first end of the first electric capacity C1 is gradually varied to high level voltage from low level voltage so that the voltage controlling pole place at the first transistor T1 also gradually becomes high level voltage from low level voltage, thus being gradually turned on the first transistor T1.
Fig. 3 is an illustration for first schematic circuit diagram of the concrete structure of the switching device of embodiment illustrated in fig. 2.As it is shown on figure 3, the first end PI of switching device can be connected with power supply, the second end PO of switching device may be connected to other component.Voltage generation circuit VS can include the first resistance R1, between its first end that can be connected on the first electric capacity C1 and first pole of the first transistor T1, provides the voltage equal to supply voltage value to first end of the first electric capacity C1.
Below, first use P type metal-oxide-semiconductor for the first transistor T1, the work process of this circuit breaker in middle device is described.In the case, the first pole of the first transistor is source electrode, and the second pole of the first transistor is drain electrode.In this example, the first end PI of switching device connects high level power supply, and therefore, the first resistance R1 provides the voltage of high level to first end of the first electric capacity C1.When applying high level voltage at the control end CP of switching device, the first transistor T1 ends, and switching device is off.When controlling end CP and applying low level voltage, owing to the voltage of first end of the first electric capacity C1 is high level voltage, therefore, the first electric capacity C1 starts electric discharge, and the voltage of its first end is gradually lowered.Correspondingly, the voltage in the control pole of the first transistor T1, also with the discharge process of the first electric capacity C1, is gradually lowered as low level from high level.So, the first transistor T1 is gradually turned on, and switching device is in closure state, and electric current flows to the second end PO from the first end PI of switching device.
Additionally, for the first transistor T1 use N-type metal-oxide-semiconductor in the case of illustrate.In the case, the first pole of the first transistor is source electrode, and the second pole of the first transistor is drain electrode.In this example, the first end PI of switching device connects low level power, and therefore, the first resistance R1 provides low level voltage to first end of the first electric capacity C1.When becoming high level voltage at the voltage controlling end CP applying of switching device from low level voltage, owing to the voltage of first end of the first electric capacity C1 is low level voltage, therefore, the first electric capacity C1 is charged.The voltage of first end of the first electric capacity C1 is gradually varied to high level voltage from low level voltage, the voltage controlling pole place at the first transistor T1 is made also to gradually become high level voltage from low level voltage, thus being gradually turned on the first transistor T1, switching device is in closure state, and electric current flows to the first end PI from the second end PO of switching device.
Fig. 4 is an illustration for second schematic circuit diagram of the concrete structure of the switching device of embodiment illustrated in fig. 2.As shown in Figure 4, with the circuit shown in Fig. 3 the difference is that, in switching device, also include another transistor circuit with control the first transistor T1 control pole level.
In this circuit, the first transistor T1 can be P type metal-oxide-semiconductor, and the first end PI of switching device can connect high level power supply, and the first resistance R1 provides the voltage of high level to first end of the first electric capacity C1.The transistor circuit controlling the first transistor T1 level controlling pole can include the transistor seconds T2 (it is of course also possible to being the metal-oxide-semiconductor of N-type) of NPN type, the second resistance R2, the 3rd resistance R3, the 4th resistance R4.First pole of transistor seconds T2 can be connected to the first transistor T1 by the second resistance R2 and control pole, and second pole of transistor seconds T2 can connect low level voltage.The control pole (base stage) of transistor seconds T2 can connect low level voltage by the 3rd resistance R3 and the four resistance R4 connected, and the junction point of the 3rd resistance R3 and the four resistance R4 can the control end CP of connecting switch.In the case, the first pole of transistor seconds is colelctor electrode, and the second pole of transistor seconds is emitter stage.
In this circuit, when the control end CP of switching device applies low level voltage, transistor seconds T2 ends, and it is high level voltage that the first transistor T1 controls end, and the first transistor T1 ends, and switching device is off.When the voltage controlling end CP input high level of switching device, transistor seconds T2 turns on, and first end controlling pole and the first electric capacity C1 of the first transistor T1 is connected to low level voltage.Owing to the voltage of first end of the first electric capacity C1 is high level voltage, therefore, the first electric capacity C1 starts electric discharge, and the voltage of its first end is gradually lowered.Correspondingly, the voltage in the control pole of the first transistor T1, also with the discharge process of the first electric capacity C1, is gradually lowered as low level from high level.So, the first transistor T1 is gradually turned on, and switching device is in closure state, and electric current flows to the second end PO from the first end PI of switching device.
Fig. 5 is an illustration for the 3rd schematic circuit diagram of the concrete structure of the switching device of embodiment illustrated in fig. 2.As it is shown in figure 5, with the circuit shown in Fig. 4 the difference is that, the first transistor T1 can be N-type metal-oxide-semiconductor, and transistor seconds T2 can be PNP transistor (it is of course also possible to being the metal-oxide-semiconductor of P type).First end PI of switching device can connect low level power, and the first resistance R1 provides low level voltage to first end of the first electric capacity C1.Second pole of transistor seconds T2 can connect high level voltage VH.The 3rd resistance R3 and the four resistance R4 that the control pole (base stage) of transistor seconds T2 can be passed through to connect connects high level voltage VH.In the case, the first pole of transistor seconds is colelctor electrode, and the second pole of transistor seconds is emitter stage.In this circuit, when the control end CP of switching device applies high level voltage, transistor seconds T2 ends, and it is low level voltage that the first transistor T1 controls end, and the first transistor T1 ends, and switching device is off.When the voltage controlling end CP input low level of switching device, transistor seconds T2 turns on, and first end controlling pole and the first electric capacity C1 of the first transistor T1 is connected to high level voltage.Owing to the voltage of first end of the first electric capacity C1 is low level voltage, therefore, the first electric capacity C1 starts to charge up, and the voltage of its first end gradually rises.Correspondingly, the voltage in the control pole of the first transistor T1, also with the charging process of the first electric capacity C1, gradually rises as high level from low level.So, the first transistor T1 is gradually turned on, and switching device is in closure state, and electric current flows to the first end PI from the second end PO of switching device.
Industrial applicibility
This utility model is applicable to the circuit conducting of switch to buffer requirements, for instance, power-supplying circuit.Closing to connect the process of power supply and component from being disconnected at switching device, the first electric capacity C1 plays cushioning effect for control voltage so that the control pole tension of the first transistor T1 relatively slowly become conducting voltage.The first transistor T1 is gradually turned on so that be gradually increased without there is peak current by the electric current of the first transistor T1.Therefore, the electric current that power supply exports other element via switching device is gradually increased, and will not produce sudden change.This guarantees the voltage of power supply output and will not produce unexpected pressure drop, it is possible to effectively protect component.Particularly when the circuit being connected with switching device includes capacitive element, when the first transistor is gradually turned on, the electric current passed through can charge to capacitive element in advance, without affecting the state of other element in circuit.Such as, when comprising capacitive element in circuit with integrated circuit die I C, starting before integrated circuit die I C, the capacitive element in circuit slowly can being charged, during to avoid directly initiating, circuit moment consumes excessive electric energy and exceedes the power supply capacity of power supply.
Switching device according to embodiment of the present utility model can eliminate the instantaneous variation of the electric current exporting other element from power supply, and does any improvement without need for power supply itself.
Switching device according to the present embodiment of the present utility model can control the first transistor T1 from by the end of ON time by adjusting the capacity of the first electric capacity C1, thus meeting the power demands of different component.
Switching device according to embodiment of the present utility model can use the first resistance R1 being connected to power supply to provide voltage for first end of the first electric capacity C1, it is possible to realizes voltage generation circuit VS with simple circuit structure.
Switching device according to embodiment of the present utility model can include another transistor circuit to control the level controlling pole of the first transistor T1, it is ensured that the stability of the first transistor T1 conducting and reliability.
It should be noted that in the foregoing description, high level, low level are used only for distinguishing whether voltage enables to transistor turns, do not limit the value of voltage.Such as, low level may refer to the level of ground connection, it is also possible to is negative level.Additionally, selected P type, N-type, NPN type, positive-negative-positive, metal-oxide-semiconductor are schematic explanation, it is not for restriction of the present utility model.According to principle of the present utility model, those skilled in the art can when not paying creative work, and the type for transistor makes suitable selection and adjustment, and these select and adjustment is also considered as protection domain of the present utility model.
It is understood that embodiment of above is merely to illustrate that principle of the present utility model and the illustrative embodiments that adopts, but this utility model is not limited thereto.For those skilled in the art, when without departing from spirit of the present utility model and essence, it is possible to make various modification and improvement, these modification and improvement are also considered as protection domain of the present utility model.
Claims (10)
1. a switching device, including controlling end, the first end, the second end and the first transistor；The pole that controls of described the first transistor connects the control end of described switching device, and the first pole of described the first transistor connects the first end of described switching device, and the second pole of described the first transistor connects the second end of described switching device；It is characterized in that, described switching device also includes the first electric capacity and voltage generation circuit；
First end of described first electric capacity is connected with the control pole of described the first transistor, the second termination low level voltage；Described voltage generation circuit provides the opposite polarity voltage of the conducting voltage with described the first transistor to described first end of described first electric capacity.
2. switching device according to claim 1, it is characterised in that
Described voltage generation circuit includes the first resistance, between its first end being connected on described first electric capacity and the first pole of described the first transistor.
3. switching device according to claim 1 and 2, it is characterised in that described the first transistor is P-type transistor.
4. switching device according to claim 1 and 2, it is characterised in that described the first transistor is P type metal-oxide-semiconductor, and the first pole of the first transistor is source electrode, the second pole of described the first transistor is drain electrode.
5. switching device according to claim 4, it is characterised in that described switching device also includes transistor seconds, the second resistance, the 3rd resistance, the 4th resistance；Described transistor seconds is N-type transistor；
Wherein, first pole of described transistor seconds is connected to the described control pole of described the first transistor by described second resistance, second pole of described transistor seconds connects low level voltage, the pole that controls of described transistor seconds connects low level voltage by described 3rd resistance and described 4th resistance connected, and the junction point of described 3rd resistance and described 4th resistance connects the control end of described switching device.
6. switching device according to claim 5, it is characterised in that described transistor seconds is NPN transistor；First pole of described transistor seconds is colelctor electrode, and the second pole of described transistor seconds is emitter stage.
7. switching device according to claim 1 and 2, it is characterised in that described the first transistor is N-type transistor.
8. switching device according to claim 1 and 2, it is characterised in that described the first transistor is N-type metal-oxide-semiconductor；First pole of described the first transistor is source electrode, and the second pole of described the first transistor is drain electrode.
9. switching device according to claim 8, it is characterised in that described switching device also includes transistor seconds, the second resistance, the 3rd resistance, the 4th resistance；Described transistor seconds is P-type transistor；
Wherein, first pole of described transistor seconds is connected to the described control pole of described the first transistor by described second resistance, second pole of described transistor seconds is connected to high level voltage, the pole that controls of described transistor seconds is connected to high level voltage by described 3rd resistance and described 4th resistance connected, and the junction point of described 3rd resistance and described 4th resistance connects the control end of described switching device.
10. switching device according to claim 9, it is characterised in that described transistor seconds is PNP transistor；First pole of described transistor seconds is colelctor electrode, and the second pole of described transistor seconds is emitter stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521084369.1U CN205377821U (en) | 2015-12-23 | 2015-12-23 | Switchgear |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521084369.1U CN205377821U (en) | 2015-12-23 | 2015-12-23 | Switchgear |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205377821U true CN205377821U (en) | 2016-07-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521084369.1U Active CN205377821U (en) | 2015-12-23 | 2015-12-23 | Switchgear |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205377821U (en) |
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2015
- 2015-12-23 CN CN201521084369.1U patent/CN205377821U/en active Active
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