CN205355526U - Semiconductor laser unit - Google Patents
Semiconductor laser unit Download PDFInfo
- Publication number
- CN205355526U CN205355526U CN201620090927.3U CN201620090927U CN205355526U CN 205355526 U CN205355526 U CN 205355526U CN 201620090927 U CN201620090927 U CN 201620090927U CN 205355526 U CN205355526 U CN 205355526U
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- CN
- China
- Prior art keywords
- semiconductor laser
- heat sink
- vbg
- base
- chip
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Abstract
The utility model provides a semiconductor laser, include: it is heat sink, the semiconductor laser chip is installed on heat sink, the collimating mirror, it is right to be used for the light that the chip sent carries out the fast axis collimation, body bragg grating (VBG) is as semiconductor laser's exocoel, the VBG base for the installation sets up VBG, wherein, the front end of VBG base is equipped with U type groove, through gluing in U type groove both sides bottom and heat sink contact surface department's point, makes VBG base and heat sink the connection fix, distance between two inboards in the U type groove is greater than the width of collimating mirror and the width of chip. According to the utility model discloses a semiconductor laser has advantages such as stable performance, simple structure, small, low -cost, easy encapsulation.
Description
Technical field
This utility model relates to field of lasers, particularly relates to a kind of semiconductor laser element.
Background technology
Semiconductor laser, because of the chip structure of its uniqueness, has photoelectric direct and connects the advantages such as conversion, volume is little, life-span length, integrated level are high, be widely used in fields such as optic communication, optical storage, light sensings.Conventional high power semiconductor lasers output spectrum is wider, and along with electric current increases, spectral centroid wavelength can drift about to long wave direction, simultaneously, conventional semiconductor laser device is very sensitive to exterior temperature change, when outside variation of ambient temperature, also bigger drift can be there is in spectral centroid wavelength, and due to the wavelength selectivity of Volume Bragg grating (VBG) and angular selectivity, enable it to narrow live width, and the centre wavelength of spectrum is basically unchanged in big current range and in big temperature range, therefore, VBG would generally be utilized as the exocoel of semiconductor laser, to overcome the problems referred to above, realize the narrow linewidth frequency stabilization output of semiconductor laser.
In order to keep the operating temperature of semiconductor laser; semiconductor laser would generally be packaged in heat sink on; and in order to install VBG; it is typically employed in viscous directly above plate glass one piece relatively thin or other metal derbies of heat sink front end face installing hole; base as VBG element; owing to the thermal coefficient of expansion of base material therefor is different and relatively thin from the thermal coefficient of expansion of heat sink material therefor; very easily cause that its contact surface with VBG element produces bigger deformation when variations in temperature, thus causing the lock ripple inefficacy of VBG element or degradation.And in bonding process, due to adhesive spots and chip hypotelorism, very easily cause colloid pollution chip.Additionally, for the deformation overcoming variations in temperature to cause, it be also possible to use bulk heat sink at the position installation VBG element away from chip, but this structure is typically more complicated, volume is big, and cost is high, and the problem that can bring encapsulation difficulty.
Summary of the invention
In order to overcome the problems referred to above, this utility model provides a kind of semiconductor laser and installation method thereof.Described semiconductor laser, including:
Heat sink；
Semiconductor laser chip, be installed in heat sink on；
Fast axis collimation mirror, carries out fast axis collimation for the light that described chip is sent；
Volume Bragg grating (VBG), as the exocoel of semiconductor laser；
VBG base, for installation settings VBG,
It is characterized in that, the front end of described VBG base is provided with U-type groove, by at U-type groove two side bottom and heat sink contact surface place point glue, making VBG base fix with heat sink connection, the width of the width more than described fast axis collimation mirror of the distance between inside described U-type groove two and chip.
Wherein, the thermal coefficient of expansion of described base is identical with heat sink thermal coefficient of expansion.
Wherein, described base is identical or different with described heat sink material.
Wherein, described base and described heat sink by red copper prepare.
Wherein, thickness is length at least the 30% of described base, it is preferable that at least 40%.Adopt said structure, have that stable performance, simple in construction, volume be little according to laser instrument of the present utility model, low cost, be prone to the advantages such as encapsulation.
Accompanying drawing explanation
Fig. 1 show the side view of the semiconductor laser according to embodiment of the present utility model；
Fig. 2 show the top view of the semiconductor laser according to embodiment of the present utility model；
Fig. 3 and Fig. 4 show the some glue position view of semiconductor laser according to an embodiment of the invention.
Wherein, 1: semiconductor laser chip；2: semiconductor laser thermal sediment, here for C-MOUNT；3:FAC collimating mirror；4:VBG base；5:VBG；6:U type groove；7: heatsink mounting hole.
Detailed description of the invention
Include according to semiconductor laser structure of the present utility model: heat sink 2, it has installing hole；Semiconductor laser chip 1, is installed in the upper surface of heat sink 2；Collimating mirror 3, carries out fast axis collimation for the light that described chip 1 is sent, non-sphere collimation mirror is preferably used herein；VBG5, as the exocoel of semiconductor laser；VBG base 4, for installation settings VBG.The light sent from described chip 1 is via, after fast axis collimation mirror 3 fast axis collimation, arriving VBG5.The incident illumination meeting VBG grating equation will be reflected by VBG, turn again to laser instrument via described collimating mirror 3, constitute new resonator cavity with described chip of laser, form the laser output of arrowband and frequency stable, reach the purpose of wavelength locking.
In the present embodiment, referring to Fig. 1, the front end of VBG base 4 is provided with U-type groove, VBG base 4 by being connected fixing at U-type groove two side bottom with the contact surface place point glue of heat sink 2 with heat sink 2, distance between U-type groove both sides is more than the width of fast axis collimation mirror 3, to avoid the glue stain fast axis collimation mirror 3 and the chip 1 that overflow from contact surface.
Heat sink 2 are generally formed by the red copper that thermal conductivity is high, when the clear glass adopting prior art manufactures base 4, the thermal coefficient of expansion of base 4 is generally and heat sink 2 different, now, the heat produced when chip 1 works can cause the modified difference between heat sink 2 and base 4, thus causing that VBG5 is subjected to displacement so that resonator cavity is lacked of proper care, lock ripple effect lost efficacy.Red copper that the thermal coefficient of expansion of the material preferably employed for this and form heat sink 2 is identical or other metal materials are to form base 4, to reduce the modified difference that temperature impact produces, also can make thickness thickness and the uniformity as far as possible of base 4 simultaneously, at least the 30% of the length that thickness is base 4 of preferred base 4, more preferably at 40%, to guarantee that, when variations in temperature, the deflection between base 4 and the contact surface of VBG is minimum.Heat sink 2 preferably employ C-MOUNT, B-MOUNT, the flat packing forms such as heat sink.
Additionally, above example cannot be only used for the C-MOUNT of installing hole, B-MOUNT, the flat packing forms such as heat sink, it may also be used for without installing hole or by fast axis collimation mirror 3 and the integrated structure of VBG base 4.
Finally it should be noted that, above example is only in order to illustrate that the technical solution of the utility model is not intended to limit, and in application, extend to other amendment, change, application and embodiment, think that all such amendments, change, application, embodiment are all in spirit and scope of the present utility model simultaneously.
Claims (5)
1. a semiconductor laser, including:
Heat sink；
Semiconductor laser chip, be installed in heat sink on；
Collimating mirror, carries out fast axis collimation for the light that described chip is sent；
Volume Bragg grating (VBG), as the exocoel of semiconductor laser；
VBG base, for installation settings VBG,
It is characterized in that, the front end of described VBG base is provided with U-type groove, by at U-type groove two side bottom and heat sink contact surface place point glue, making VBG base fix with heat sink connection, the width of the width more than described collimating mirror of the distance between inside described U-type groove two and chip.
2. semiconductor laser according to claim 1, it is characterised in that the thermal coefficient of expansion of described base is identical with heat sink thermal coefficient of expansion.
3. semiconductor laser according to claim 2, it is characterised in that described base is identical or different with described heat sink material.
4. semiconductor laser according to claim 3, it is characterised in that described base and described heat sink by red copper prepare.
5. semiconductor laser according to claim 3, it is characterised in that thickness is length at least the 30% of described base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620090927.3U CN205355526U (en) | 2016-01-29 | 2016-01-29 | Semiconductor laser unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620090927.3U CN205355526U (en) | 2016-01-29 | 2016-01-29 | Semiconductor laser unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205355526U true CN205355526U (en) | 2016-06-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620090927.3U Expired - Fee Related CN205355526U (en) | 2016-01-29 | 2016-01-29 | Semiconductor laser unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205355526U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106324852A (en) * | 2016-10-27 | 2017-01-11 | 中国电子科技集团公司第十三研究所 | VBG external cavity semiconductor laser fast-axis collimating lens assembly device and method |
| CN106340801A (en) * | 2016-01-29 | 2017-01-18 | 北京杏林睿光科技有限公司 | Semiconductor laser unit and mounting method thereof |
-
2016
- 2016-01-29 CN CN201620090927.3U patent/CN205355526U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340801A (en) * | 2016-01-29 | 2017-01-18 | 北京杏林睿光科技有限公司 | Semiconductor laser unit and mounting method thereof |
| CN106324852A (en) * | 2016-10-27 | 2017-01-11 | 中国电子科技集团公司第十三研究所 | VBG external cavity semiconductor laser fast-axis collimating lens assembly device and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160629 Termination date: 20210129 |