CN205304603U - A LC resonance circuit for boost circuit - Google Patents
A LC resonance circuit for boost circuit Download PDFInfo
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- CN205304603U CN205304603U CN201520625263.1U CN201520625263U CN205304603U CN 205304603 U CN205304603 U CN 205304603U CN 201520625263 U CN201520625263 U CN 201520625263U CN 205304603 U CN205304603 U CN 205304603U
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Abstract
The utility model provides a LC resonance circuit for boost circuit, including rectifier bridge, electric capacity C1, inductance L1, inductance L2, inductance L3, diode D3, diode D4, diode D5, resistance R1, resistance R2, electric capacity C2, electric capacity C3, electric capacity C4 and mos pipe Q1, the utility model relates to a rationally, convenient to use, adoption LC resonance circuit does boost circuit's absorption, and the absorbility is better than traditional snubber circuit, returns to the main circuit with absorptive energy, the efficiency of is improved, reduced calorific capacity, power output is no longer consequently limited, has restrained the voltage stress peak value, reduces the voltage stress that the MOS pipe that steps up bore. The stability of boost circuit is improved and reliability.
Description
Technical field
This utility model is specifically related to a kind of LC resonance circuit for booster circuit.
Background technology
High-frequency direct-current power supply is widely used in wind-power electricity generation, the industry such as new forms of energy and industrial vehicle, along with above several industries are increasing to the power demand of charging, power density requirements is more and more higher, but the design of super high power power supply exists Railway Project: the stability of input voltage; Transformer primary current is big; Secondary commutation output voltage stress is big. For three above problem: problem one and problem two, by adopting booster circuit to solve problem. Problem three solves by adopting the dividing potential drop secondary way of output.
Booster circuit has stable input voltage, improves primary voltage, reduces the advantages such as primary peak point current. Shortcoming is: the absorption pressure of absorbing circuit is very big, if adopting traditional absorption pattern to have several defect: one, be limited to the absorbability of absorbing circuit, power output is restricted, it is impossible to improves power density, does greater power. Two, there is inefficiency in traditional absorbing circuit, serious situation of generating heat. Three, due to voltage spikes is very high, causes that the voltage stress that booster circuit metal-oxide-semiconductor bears is big, it is impossible to select the metal-oxide-semiconductor of low voltage stress low cost. Four, because power is very big, there is the problem that input current spike is very high.
Utility model content
The purpose of this utility model is for solving above-mentioned deficiency, it is provided that a kind of LC resonance circuit for booster circuit.
The purpose of this utility model is achieved through the following technical solutions:
A kind of LC resonance circuit for booster circuit, including rectifier bridge, electric capacity C1, inductance L1, inductance L2, inductance L3, diode D3, , diode D4, , diode D5, resistance R1, resistance R2, electric capacity C2, electric capacity C3, electric capacity C4 and mos pipe Q1, input three-phase electricity is unidirectional current through rectifier bridge rectification, galvanic positive pole connects one end of electric capacity C1 and one end of inductance L1 respectively, galvanic negative pole connects the other end of electric capacity C1 and one end of inductance L3 respectively, the other end of inductance L1 connects one end of electric capacity C3 and the positive pole of diode D4 respectively, the negative pole of diode D4 connects HVDC positive pole, and the other end of inductance L3 connects one end of inductance L2 respectively, the source electrode of mos pipe, one end of electric capacity C3, one end of electric capacity C4 and DD negative pole, the other end of inductance L2 connects one end of electric capacity C2 and the positive pole of diode D3 respectively, and the negative pole of diode D3 connects the other end of electric capacity C3, and the other end of electric capacity C2 connects the drain electrode of mos pipe respectively, the positive pole of diode D5 and the other end of inductance L1, the negative pole of diode D5 connects one end of resistance R1, the other end of resistance R1 connects one end of resistance R2, the other end of resistance R2 connects the other end of electric capacity C3 and the negative pole of diode D3 respectively, one end of electric capacity C4 connects DD negative pole, and the other end of electric capacity C4 connects HVDC positive pole.
This utility model has following beneficial effect:
This utility model is reasonable in design, easy to use, adopts LC resonance circuit to do the absorption of booster circuit, and absorbability is better than conventional suction circuit, and the energy of absorption is returned to main circuit; Improve efficiency, decrease caloric value, power output is no longer therefore limited, it is suppressed that voltage stress peak value, reduces the voltage stress that boosting metal-oxide-semiconductor bears. Improve stability and the reliability of booster circuit.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present utility model.
Detailed description of the invention
Below in conjunction with accompanying drawing, this utility model is further described:
As it is shown in figure 1, a kind of LC resonance circuit for booster circuit, including rectifier bridge 1, electric capacity C1, inductance L1, inductance L2, inductance L3, diode D3, , diode D4, , diode D5, resistance R1, resistance R2, electric capacity C2, electric capacity C3, electric capacity C4 and mos pipe Q1, input three-phase electricity is unidirectional current through rectifier bridge rectification, galvanic positive pole connects one end of electric capacity C1 and one end of inductance L1 respectively, galvanic negative pole connects the other end of electric capacity C1 and one end of inductance L3 respectively, the other end of inductance L1 connects one end of electric capacity C3 and the positive pole of diode D4 respectively, the negative pole of diode D4 connects HVDC positive pole, and the other end of inductance L3 connects one end of inductance L2 respectively, the source electrode of mos pipe, one end of electric capacity C3, one end of electric capacity C4 and DD negative pole, the other end of inductance L2 connects one end of electric capacity C2 and the positive pole of diode D3 respectively, and the negative pole of diode D3 connects the other end of electric capacity C3, and the other end of electric capacity C2 connects the drain electrode of mos pipe respectively, the positive pole of diode D5 and the other end of inductance L1, the negative pole of diode D5 connects one end of resistance R1, the other end of resistance R1 connects one end of resistance R2, the other end of resistance R2 connects the other end of electric capacity C3 and the negative pole of diode D3 respectively, one end of electric capacity C4 connects DD negative pole, and the other end of electric capacity C4 connects HVDC positive pole.
Operation principle: after input 380V alternating current power supply accesses, be unidirectional current by rectifier bridge by input three-phase electricity rectification, after unidirectional current enters booster circuit, GPU automatic decision HVDC+ voltage, drive Q1 to close, L1 and Q1 constitutes circuit. Charge to L1, GPU output low level, Q1 disconnects, and L1 is because the self induction electromotive force of inductance starts electric discharge, and LC resonance absorbing circuit works simultaneously, by in the self induction electromotive force peak absorbing of L1 moment to C2, when the next cycle, when GPU exports high level, drive Q1 Guan Bi, the voltage difference of the both sides of C2 is transformed in L2, and the energy of absorption is returned to main circuit by D3 by L2.
Rectifier bridge, is unidirectional current by input AC electric rectification.
High frequency booster circuit is made up of L1, Q1 and GPU, and the unidirectional current after rectification rises to the high-voltage direct-current meeting demand.
LC resonance circuit is made up of C2, L2, D3: 1, absorbs booster circuit mos pipe Q1 and disconnects the due to voltage spikes of moment, protects metal-oxide-semiconductor, and 2, by LC resonance circuit energy returned to main circuit, reduce heating, improve charger efficiency.
C1, C3, C4 undertake the voltage regulation filtering effect that different condition is little respectively.
The input complete boosting of three-phase alternating current electric rectification: booster circuit is converted to ac square wave by full-bridge circuit after terminating, and is converted to the unidirectional current of needs by the rational no-load voltage ratio of transformator. Advantage is in that: 1, by adopting booster circuit to reduce the peak value of transformer primary current; Reduce the input power interference for output; 3, the power supply pollution for input ac power is reduced;4, improve the power density of unit volume.
Make the absorbing circuit of booster circuit of LC resonance circuit, by LC resonance, the energy absorbed is returned main circuit. Reduce caloric value, improve the efficiency of whole power supply. LC resonance circuit is adopted to do the absorbing circuit of booster circuit, it is possible to reduce the voltage stress that boosting metal-oxide-semiconductor bears, improve the stability of whole booster circuit. Reduce cost, improve the market competitiveness of large power supply. Adopting the absorbing circuit characteristic of LC resonance circuit, the mode slowly absorbing energy continuous energy release by LC resonance circuit in the moment of start protects DC-DC circuit. Reduce the booster circuit starting current spike for input ac power.
Claims (1)
1. for a LC resonance circuit for booster circuit, including rectifier bridge, electric capacity C1, inductance L1, inductance L2, inductance L3, diode D3, , diode D4, , diode D5, resistance R1, resistance R2, electric capacity C2, electric capacity C3, electric capacity C4 and mos pipe Q1, it is characterized in that: input three-phase electricity is unidirectional current through rectifier bridge rectification, galvanic positive pole connects one end of electric capacity C1 and one end of inductance L1 respectively, galvanic negative pole connects the other end of electric capacity C1 and one end of inductance L3 respectively, the other end of inductance L1 connects one end of electric capacity C3 and the positive pole of diode D4 respectively, the negative pole of diode D4 connects HVDC positive pole, and the other end of inductance L3 connects one end of inductance L2 respectively, the source electrode of mos pipe, one end of electric capacity C3, one end of electric capacity C4 and DD negative pole, the other end of inductance L2 connects one end of electric capacity C2 and the positive pole of diode D3 respectively, and the negative pole of diode D3 connects the other end of electric capacity C3, and the other end of electric capacity C2 connects the drain electrode of mos pipe respectively, the positive pole of diode D5 and the other end of inductance L1, the negative pole of diode D5 connects one end of resistance R1, the other end of resistance R1 connects one end of resistance R2, the other end of resistance R2 connects the other end of electric capacity C3 and the negative pole of diode D3 respectively, one end of electric capacity C4 connects DD negative pole, and the other end of electric capacity C4 connects HVDC positive pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520625263.1U CN205304603U (en) | 2015-08-19 | 2015-08-19 | A LC resonance circuit for boost circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520625263.1U CN205304603U (en) | 2015-08-19 | 2015-08-19 | A LC resonance circuit for boost circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205304603U true CN205304603U (en) | 2016-06-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520625263.1U Active CN205304603U (en) | 2015-08-19 | 2015-08-19 | A LC resonance circuit for boost circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205304603U (en) |
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2015
- 2015-08-19 CN CN201520625263.1U patent/CN205304603U/en active Active
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