CN205303942U - High accuracy wide dynamic range's semiconductor laser drive circuit - Google Patents
High accuracy wide dynamic range's semiconductor laser drive circuit Download PDFInfo
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- CN205303942U CN205303942U CN201620064482.1U CN201620064482U CN205303942U CN 205303942 U CN205303942 U CN 205303942U CN 201620064482 U CN201620064482 U CN 201620064482U CN 205303942 U CN205303942 U CN 205303942U
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Abstract
The utility model discloses a high accuracy wide dynamic range's semiconductor laser drive circuit, include: semiconductor laser, at least two way parallel connection's constant current source, multichannel digital analog converter, multichannel adc and microcontroller, at least two way parallel connection's constant current source drives jointly semiconductor laser's work, the output of microcontroller through setting up multichannel adc, control corresponds the drive current of constant current source output, current sampling circuit in each way constant current source with the drive current value in multichannel adc conveys microcontroller, microcontroller adjusts the drive current size of each way constant current source as required or controls each way constant current source and open or close, thus the adjustment the output driver electric current of at least two way parallel connection's constant current source. The utility model provides a semiconductor laser's drive circuit, the drive current's of its output scope broad, the precision is also than higher.
Description
Technical field
The utility model relates to the driving circuit of a kind of semiconductor laser.
Background technology
Semiconductor laser is widely used in optical communication field, and the pump light source as light amplification modules such as EDFA, RAMAN uses.
Semiconductor laser is current sensitive device, and small curent change will cause the very big change of Output optical power, affect the performance of whole light amplification module. This change affects more obvious under small area analysis. It is possible to the control semiconductor laser drive current of high precision, the particularly control accuracy under small area analysis, seem particularly important.
Existing semiconductor laser device driving circuit is all mainly driven by single constant current source circuit, and its direct current path comprises power supply, laser apparatus, triode or the devices in series such as MOS pipe, sampling resistance and becomes.
Due to by the offset voltage of operational amplifier and the restriction of sampling resistance, the electric current dynamicrange of driving circuit has become one to the factor mutually restricted with current precision, although the figure place improving analog to digital converter (DAC) can improve current precision to a certain extent, but after figure place reaches certain figure place, circuit error and noise are easy to be flooded.
Owing to semiconductor laser kind is more, driving electric current from several milliamperes to tens amperes have, existing drive circuit for laser mainly controls for laser apparatus that is a certain or several model, and coverage is very little. The constant current source of small area analysis cannot drive the laser apparatus of big current, and the constant current source of big current exists bigger the blind area of control in small area analysis region.
The constant current source that such as single channel maximum drive current (Imax) is 10A, voltage of supply (VCC) is 3.3V, the conduction voltage drop (Vmos) that semiconductor laser front is 2.2V, MOS pipe to voltage (Vld) is 0.02V.According to calculating, maximum value Rmax=(the VCC-Vld-Vmos)/Imax=0.108 �� of sampling resistance. If the zero bias of analog to digital converter (DAC) and operational amplifier offset voltage summation are 5mV, so imbalance (offset) electric current I off=5mV/0.108 ��=46.3mA of this road constant current source, the galvanic areas lower than 46.3mA is the blind area of control.
Practical novel content
Technical problem underlying to be solved of the present utility model is to provide the driving circuit of a kind of semiconductor laser, and a wider range of its driving electric current exported, precision is also higher.
In order to solve above-mentioned technical problem, the utility model provides the semiconductor laser device driving circuit of a kind of high-precision wide dynamicrange, comprise: constant current source that semiconductor laser, at least two-way are connected in parallel, multi-channel digital and analogue transmodulator, multichannel analog to digital converter and microcontroller; The constant current source that described at least two-way is connected in parallel drives the work of described semiconductor laser jointly;
Microcontroller, by arranging the output of multichannel analog to digital converter, controls the driving electric current that corresponding constant current source exports; Driving current value is sent in microcontroller through multichannel analog to digital converter by the current sampling circuit in the constant current source of each road; Microcontroller adjusts the driving size of current of each road constant current source as required or controls each road constant current source and opens or closes, thus the output driving current of at least constant current source that two-way is connected in parallel described in adjustment.
In a preferred embodiment: each road constant current source comprises an operational amplifier, its electrode input end is connected with multi-channel digital and analogue transmodulator Zhong mono-road output terminal, and output terminal is connected to the grid of switching tube by a switch; The source electrode of described switching tube is connected to the negative input of described operational amplifier by described current sampling circuit; The output terminal of described current sampling circuit is connected with described multichannel analog to digital converter Zhong mono-road input terminus.
In a preferred embodiment: in the constant current source that described at least two-way is connected in parallel, the drain electrode of its each switching tube is interconnected and is connected to the input terminus of described semiconductor laser.
In a preferred embodiment: described switch is by described microprocessor control.
In a preferred embodiment: the current sampling circuit in the constant current source of described each road, its sampling resistance is inequal, makes the precision of the driving electric current of each road constant current source output not identical.
In a preferred embodiment: the maximum drive current that described each road constant current source exports is not identical.
Compared to prior art, the utility model possesses following useful effect:
The utility model adopts two-way or multiple constant current source parallel way to drive same semiconductor laser. Character according to shunt circuit, the driving electric current of semiconductor laser equals the superposition that each road drives electric current. Each road constant current source circuit is all independent control, has independent control voltage, sampling electric current, sampling resistance, trip switch. Difference according to demand can increase or reduce the quantity of constant current source in parallel, opens or closes a certain road constant current source, do not affect the working order on other roads. Different sampling resistance correspond to different range of current and precision, by arranging the sampling resistance value of single channel constant current source, it is possible to expand range of current and the precision of whole driving circuit. Big sampling resistance is set as the first via drives, is responsible for driving the driving of small area analysis, the 2nd tunnel arrange in sampling resistance, the driving of electric current in being responsible for, the 3rd tunnel arranges little sampling resistance, is responsible for driving the driving of big current section; By the superposition in multiple constant current source, the scope driving electric current and precision both can be increased, it is also possible to reduce the blind area of control of constant current source.
Accompanying drawing explanation
Fig. 1 is the overall schematic circuit of the utility model preferred embodiment;
Fig. 2 is the schematic circuit of constant current source part in the utility model preferred embodiment.
Embodiment
Hereafter by the drawings and specific embodiments, the utility model is described further.
With reference to figure 1, the semiconductor laser device driving circuit of a kind of high-precision wide dynamicrange, comprising: constant current source that semiconductor laser, three tunnels are connected in parallel, multi-channel digital and analogue transmodulator, multichannel analog to digital converter and microcontroller; The constant current source that described three tunnels are connected in parallel drives the work of described semiconductor laser jointly;
Microcontroller, by arranging the output of multichannel analog to digital converter, controls the driving electric current that corresponding constant current source exports; Driving current value is sent in microcontroller through multichannel analog to digital converter by the current sampling circuit in the constant current source of each road; Microcontroller adjusts driving size of current and the switch state of each road constant current source as required.
With further reference to Fig. 2, each road constant current source comprises an operational amplifier, and its electrode input end is connected with multi-channel digital and analogue transmodulator Zhong mono-road output terminal, and output terminal is connected to the grid of switching tube by a switch; Described switch is by described microprocessor control.
The source electrode of described switching tube is connected to the negative input of described operational amplifier by described current sampling circuit; The output terminal of described current sampling circuit is connected with described multichannel analog to digital converter Zhong mono-road input terminus. The drain electrode of described switching tube is interconnected with the drain electrode of switching tube in other road constant current sources and is connected to the input terminus of described semiconductor laser.
In the present embodiment, the maximum drive current of first via constant current source is 100mA, and the maximum drive current of first via constant current source is 1000mA, and the maximum drive current of first via constant current source is 10A. The corresponding sampling resistance in current sampling circuit is set to: the sampling resistance in first via constant current source current sampling circuit is 10 ��, sampling resistance in 2nd road constant current source current sampling circuit is 1 ��, and the sampling resistance in the 3rd road constant current source current sampling circuit is 0.1 ��. Due to sampling is the analog to digital converter ADC of digital to analog converter DAC and 12 of 12. So the full accuracy of the driving electric current that first via constant current source exports is 0.024mA, and the full accuracy of the driving electric current that the 2nd road constant current source exports is 0.24mA, and the full accuracy of the driving electric current that the 3rd road constant current source exports is 2.4mA. If the zero bias of analog to digital converter DAC and operational amplifier offset voltage summation are 5mV, the offset current I of first via constant current sourceoff1=5mV/10 ��=0.5mA, the offset current I of the 2nd road constant current sourceoff2=5mA, the offset current I of the 3rd road constant current sourceoff3=50mA; The offset current of whole circuit is 0.5mA. When driving electric current to be less than 100mA, open the first via and drive, close the 2nd road and the 3rd road and drive. Driving electric current when 100mA to 1000mA, open the 2nd road constant current source, close the 3rd road constant current source, first via constant current source can be opened as required and can also close. When driving electric current is when 1000mA to 10A, opening the 3rd road constant current source, first via constant current source and the 2nd road constant current source can be opened as required and can also close. Thus widened width and the precision of whole driving circuit output driving current.
The above; it is only the utility model preferably embodiment; but protection domain of the present utility model is not limited thereto; any it is familiar with those skilled in the art in the technical scope that the utility model discloses; the change that can expect easily or replacement, all should be encompassed within protection domain of the present utility model.Therefore, protection domain of the present utility model should be as the criterion with the protection domain of claim.
Claims (6)
1. the semiconductor laser device driving circuit of a high-precision wide dynamicrange, it is characterised in that comprising: constant current source that semiconductor laser, at least two-way are connected in parallel, multi-channel digital and analogue transmodulator, multichannel analog to digital converter and microcontroller; The constant current source that described at least two-way is connected in parallel drives the work of described semiconductor laser jointly;
Microcontroller, by arranging the output of multichannel analog to digital converter, controls the driving electric current that corresponding constant current source exports; Driving current value is sent in microcontroller through multichannel analog to digital converter by the current sampling circuit in the constant current source of each road; Microcontroller adjusts the driving size of current of each road constant current source as required or controls each road constant current source and opens or closes, thus the output driving current of at least constant current source that two-way is connected in parallel described in adjustment.
2. the semiconductor laser device driving circuit of a kind of high-precision wide dynamicrange according to claim 1, it is characterized in that: each road constant current source comprises an operational amplifier, its electrode input end is connected with multi-channel digital and analogue transmodulator Zhong mono-road output terminal, and output terminal is connected to the grid of switching tube by a switch; The source electrode of described switching tube is connected to the negative input of described operational amplifier by described current sampling circuit; The output terminal of described current sampling circuit is connected with described multichannel analog to digital converter Zhong mono-road input terminus.
3. the semiconductor laser device driving circuit of a kind of high-precision wide dynamicrange according to claim 2, it is characterized in that: in the constant current source that described at least two-way is connected in parallel, the drain electrode of its each switching tube is interconnected and is connected to the input terminus of described semiconductor laser.
4. the semiconductor laser device driving circuit of a kind of high-precision wide dynamicrange according to claim 2, it is characterised in that: described switch is by described microprocessor control.
5. the semiconductor laser device driving circuit of a kind of high-precision wide dynamicrange according to claim 1, it is characterized in that: the current sampling circuit in the constant current source of described each road, its sampling resistance is inequal, makes the precision of the driving electric current of each road constant current source output not identical.
6. the semiconductor laser device driving circuit of a kind of high-precision wide dynamicrange according to claim 1, it is characterised in that: the maximum drive current that described each road constant current source exports is not identical.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620064482.1U CN205303942U (en) | 2016-01-22 | 2016-01-22 | High accuracy wide dynamic range's semiconductor laser drive circuit |
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| CN201620064482.1U CN205303942U (en) | 2016-01-22 | 2016-01-22 | High accuracy wide dynamic range's semiconductor laser drive circuit |
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| CN205303942U true CN205303942U (en) | 2016-06-08 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275923A (en) * | 2017-07-17 | 2017-10-20 | 青岛海信宽带多媒体技术有限公司 | A kind of control method, device and the optical module of the dbr current of laser |
| CN109782662A (en) * | 2019-01-09 | 2019-05-21 | 南通思凯光电有限公司 | A kind of digital laser control power supply |
| CN111180999A (en) * | 2020-01-09 | 2020-05-19 | 太原理工大学 | High-precision double-channel adjustable driving system for different semiconductor lasers |
| CN111864534A (en) * | 2020-08-18 | 2020-10-30 | 广东工业大学 | Semiconductor laser constant current drive circuit |
| CN113966038A (en) * | 2021-11-01 | 2022-01-21 | 深圳市先地图像科技有限公司 | Laser power control circuit and method and laser imaging equipment |
| CN114167112A (en) * | 2021-12-16 | 2022-03-11 | 青岛东软载波智能电子有限公司 | High-precision wide-range low-differential-voltage current measuring circuit |
-
2016
- 2016-01-22 CN CN201620064482.1U patent/CN205303942U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275923A (en) * | 2017-07-17 | 2017-10-20 | 青岛海信宽带多媒体技术有限公司 | A kind of control method, device and the optical module of the dbr current of laser |
| CN109782662A (en) * | 2019-01-09 | 2019-05-21 | 南通思凯光电有限公司 | A kind of digital laser control power supply |
| CN111180999A (en) * | 2020-01-09 | 2020-05-19 | 太原理工大学 | High-precision double-channel adjustable driving system for different semiconductor lasers |
| CN111180999B (en) * | 2020-01-09 | 2021-10-15 | 太原理工大学 | High-precision double-channel adjustable driving system for different semiconductor lasers |
| CN111864534A (en) * | 2020-08-18 | 2020-10-30 | 广东工业大学 | Semiconductor laser constant current drive circuit |
| CN113966038A (en) * | 2021-11-01 | 2022-01-21 | 深圳市先地图像科技有限公司 | Laser power control circuit and method and laser imaging equipment |
| CN114167112A (en) * | 2021-12-16 | 2022-03-11 | 青岛东软载波智能电子有限公司 | High-precision wide-range low-differential-voltage current measuring circuit |
| CN114167112B (en) * | 2021-12-16 | 2024-05-24 | 青岛东软载波智能电子有限公司 | High-precision wide-range low-voltage-difference current measurement circuit |
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