CN205229306U - Measurement device for semi conducting material resistivity and seebeck coefficient - Google Patents
Measurement device for semi conducting material resistivity and seebeck coefficient Download PDFInfo
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- CN205229306U CN205229306U CN201521100404.4U CN201521100404U CN205229306U CN 205229306 U CN205229306 U CN 205229306U CN 201521100404 U CN201521100404 U CN 201521100404U CN 205229306 U CN205229306 U CN 205229306U
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Abstract
The utility model relates to a measurement device for semi conducting material resistivity and seebeck coefficient. Its technical scheme is: measuring device comprises operating system, horizontal migration system and measurement system. The one end in horizon bar (9) is fixed respectively in hot junction electrode (12) and cold junction electrode (24), and the other end of horizon bar (9) passes through nut formula slider (8) and erect straight filament pole (7) to be connected, appearance (36) horizontal migration will be tested to hot junction retractable current potential probe (29) and the cold junction retractable current potential probe (30) under through two direction of motion mutually perpendicular's slider in centre gripping electrode (13). Two outputs of two centre gripping electrode (13) and direct current pulse generator (33) correspond to be connected, hot junction retractable current potential probe (29) and cold junction retractable current potential probe (30) correspond with the anodal of high accuracy digital voltmeter (34) and negative pole and are connected. The utility model discloses can realize to cuboid sample and cylinder sample at the resistivity of different zone and the direct measurement of seebeck coefficient, measurement accuracy height.
Description
Technical field
The utility model belongs to semiconductor material measuring device technical field.Be specifically related to the measurement mechanism of a kind of semiconductor material resistivity and Seebeck coefficient.
Background technology
Resistivity and Seebeck coefficient are the important parameters of semiconductor material.They can not only the electronic transport performance of exosyndrome material, indirectly can reflect the carrier concentration of material internal and the height of mobility simultaneously.Because semiconductor material is different from the conductive mechanism of metal material, the ohmmeter based on two sonde methods cannot be used directly to measure its resistivity.When potential electrode and the semiconductor contact of ohmmeter, there will be contact resistance effect and Minority carrier injection phenomenon, cause the resistivity measurements of semiconductor material significantly to depart from actual value.At present adopt four probe method to measure semiconductor material resistivity (see Sun Yicai. semiconductor measurement technology [M]. Beijing: metallurgical industry publishing house, 1984:7 ~ 24).
The measurement mechanism of the Seebeck coefficient of semiconductor material is divided into two kinds: one is static method device; Another kind is dynamic method device.Static method device produces a fixing temperature difference, and corresponding Seebeck voltage and the ratio of this temperature difference are Seebeck coefficient.Dynamic method device is one end temperature constant keeping sample to be tested, by the other end continuous heating of sample, thus produce a continually varying temperature difference at sample two ends, linear fit is carried out to this temperature difference and corresponding Seebeck voltage, the slope of gained straight line be Seebeck coefficient (see Jia Lei etc. the thermal procession research of thermo-electric generation and the Seebeck coefficient of material measure [J]. Chinese engineering science, 2006,7:31-34).Above-mentioned two kinds of devices are compared, and the defect of static method device is that precision is lower, measurement result poor repeatability; The defect of dynamic method device is relatively time-consuming.
The measurement mechanism of existing precision resister rate and Seebeck coefficient, as the ZEM measurement series device of Japan, the Linseis measurement series device etc. of Germany, sample to be tested requires as lateral cross-sectional dimension is (2 ~ 5) × (2 ~ 5) mm
2, longitudinal size is the rectangular parallelepiped small sample of 5 ~ 15mm, for larger sized bulk sample, just can measure after needing to be cut into the small sample of corresponding size.And the resistivity of bulk sample that domestic production enterprise uses and the measurement mechanism of Seebeck coefficient, resistivity measurement is mostly based on two sonde methods, Seebeck coefficient is measured and is mostly adopted static method, measuring accuracy is lower, measurement result repeatability is poor, accurately cannot measure resistivity and the Seebeck coefficient of different tiny area, have impact on the objective evaluation to properties of product.
Summary of the invention
The purpose of this utility model is the defect overcoming prior art, object is to provide the measurement mechanism of a kind of semiconductor material resistivity and Seebeck coefficient, this device can realize the resistivity in difference region to be measured and the direct measurement of Seebeck coefficient to rectangular parallelepiped sample or cylindrical specimens, and measuring accuracy is high.
For achieving the above object, the technical solution adopted in the utility model is: this device is made up of jacking system, horizontal movement system and measuring system.
Described jacking system is:
Be fixed with two rectangular steel tubes on rear side of the upper surface of base plate symmetrically, in rectangular steel tube, lower bearing, nut type slide block, head bearing and end cap be housed from lower to upper successively.The lower end of vertical screw mandrel is arranged in lower bearing, and the middle part of vertical screw mandrel is threaded with nut type slide block, and the upper end of vertical screw mandrel passes head bearing and is fixedly connected with upper handwheel with end cap.The front side of two rectangular steel tubes vertically has bar hole, the bar hole that one end of two horizon bars is each passed through two corresponding rectangular steel tubes is fixedly connected with nut type slide block, and the other end of two horizon bars is fixedly connected with the upper surface of cold terminal electrodes with corresponding hotter side electrode.
The structure of hotter side electrode is: hotter side electrode housing is built with hot junction extension type potential probes, hot junction thermopair and single head well heater; Hot junction extension type potential probes is positioned at the anterior right side of hotter side electrode housing, hot junction thermopair is positioned at the front left of hotter side electrode housing, single head well heater is fixed on the middle position of hotter side electrode housing, the needle point of hot junction extension type potential probes stretches out hotter side electrode housing downwards, and the length that the needle point of hot junction extension type potential probes stretches out hotter side electrode housing is 5 ~ 8mm.
The structure of cold terminal electrodes is: cold terminal electrodes housing is built with cold junction extension type potential probes and cold junction thermopair; Cold junction extension type potential probes is positioned at the front left of cold terminal electrodes housing, cold junction thermopair is positioned at the anterior right side of cold terminal electrodes housing, the needle point of cold junction extension type potential probes stretches out cold terminal electrodes housing downwards, and the length that the needle point of cold junction extension type potential probes stretches out cold terminal electrodes housing is 5 ~ 8mm.
Described horizontal movement system is:
The upper surface of base plate is fixed with two the first slide rails be parallel to each other along the longitudinal direction, two first slide rails is equipped with symmetrically two piece of first slide block, and the upper surface of four piece of first slide block is fixed with one piece of first insulcrete; Two second slide rails are fixed on the upper surface of the first insulcrete in left-right direction abreast, two piece of second slide block two second slide rails be equipped with symmetrically, the upper surface of four piece of second slide block is fixed with one piece of second insulcrete, and two the 3rd slide rails are fixed on the upper surface of the second insulcrete in left-right direction abreast; Two the 3rd slide rails are equipped with symmetrically two piece of the 3rd slide block, the upper surface of the 3rd slide block is symmetrically equipped with the 3rd insulcrete, and two piece of the 3rd insulcrete is equipped with holding electrode symmetrically.Fixed bar is equipped with symmetrically in two ends, the left and right place of the second insulcrete, fixed bar upper end is provided with threaded hole, and horizontal lead screw is threaded with the threaded hole of fixed bar, and lower handwheel is equipped with in one end of horizontal lead screw, the other end of horizontal lead screw is equipped with disk, and disk is contained in the outer side bayonet slot of holding electrode.
Described measuring system is:
One piece of holding electrode is connected with an output terminal of direct current pulse power source, and another block holding electrode is connected with another output terminal of direct current pulse power source by high accuracy number reometer.The positive pole of hot junction extension type potential probes and cold junction extension type potential probes and high accuracy number voltage table and negative pole is corresponding is connected, hot junction thermopair and cold junction thermopair and the first thermometer and the second thermometer is corresponding is connected.
Utilize this device can realize the resistivity in zones of different and the direct measurement of Seebeck coefficient to rectangular parallelepiped sample or cylindrical specimens.The measuring method of described resistivity is:
First the tested surface of sample to be tested is divided into n region to be measured, then sample to be tested is put between holding electrode clamps; Mobile second insulcrete is or/and the first insulcrete, the 1st of sample to be tested region to be measured is moved to immediately below hot junction extension type potential probes and cold junction extension type potential probes, hot junction extension type potential probes is contacted with the 1st region to be measured of sample to be tested with the needle point of cold junction extension type potential probes.
The positive voltage that the display of record high accuracy number voltage table is corresponding and negative voltage, record forward current corresponding to high accuracy number reometer display and inverse current simultaneously.According to four probe method, obtain the resistivity in electric current forward stage and the resistivity of electric current reversal phase respectively; The mean value of the resistivity in described electric current forward stage and the resistivity of electric current reversal phase is the electricalresistivityρ in the 1st region to be measured
1.
By that analogy, the electricalresistivityρ in the 2nd region to be measured is recorded
2..., the electricalresistivityρ in the n-th region to be measured
n.
The measuring method of described Seebeck coefficient is:
First the tested surface of sample to be tested is divided into n region to be measured, then sample to be tested is put between holding electrode clamps; The 1st of sample to be tested region to be measured, or/and the first insulcrete, moves to immediately below hotter side electrode housing and cold terminal electrodes housing, hotter side electrode housing is contacted with the 1st region to be measured of sample to be tested with the bottom surface of cold terminal electrodes housing by mobile second insulcrete.
Open single head well heater, be first intensification measurement point when being 4 DEG C with the temperature difference of the first thermometer and the second thermometer, often raise 0.5 ~ 1 DEG C is a measurement point later, until terminate when the temperature difference of two deblocking temperature tables is greater than 10 DEG C.Record the temperature difference of two deblocking temperature tables of each measurement point, record the voltage of the high accuracy number voltage table display of each measurement point simultaneously.With the described temperature difference for horizontal ordinate and described voltage for ordinate is mapped, the slope of the straight line of linear fit is intensification Seebeck coefficient.
Close single head well heater, be first temperature measurement point when being 10 DEG C with the temperature difference of the first thermometer and the second thermometer, often reduce by 0.5 ~ 1 DEG C is a measurement point later, until terminate when the temperature difference of two deblocking temperature tables is less than 4 DEG C.Record the temperature difference of two deblocking temperature tables of each measurement point, record the voltage of the high accuracy number voltage table display of each measurement point simultaneously.With the described temperature difference for horizontal ordinate and described voltage for ordinate is mapped, the slope of the straight line of linear fit is cooling Seebeck coefficient.
The mean value of described intensification Seebeck coefficient and cooling Seebeck coefficient is then the Seebeck coefficient α in the 1st region to be measured
1.
By that analogy, then the Seebeck coefficient α in the 2nd region to be measured is recorded
2..., the Seebeck coefficient α in the n-th region to be measured
n.
Owing to adopting technique scheme, the utility model compared with prior art has following good effect:
1) measurement mechanism of traditional precision resister rate and Seebeck coefficient can only measure lateral cross-sectional dimension is (2 ~ 5) × (2 ~ 5) mm
2with the rectangular parallelepiped small sample that longitudinal size is 5 ~ 20mm; and the utility model is not only applicable to rectangular parallelepiped small sample; and be applicable to the cylindrical specimens of large-size and the rectangular parallelepiped sample of large-size; during measurement, sample to be tested is without the need to destroying; the integrality of protection sample to be tested; simplified measurement program, meets measurement demand in enterprise production process.
2) measurement mechanism of traditional precision resister rate and Seebeck coefficient can only measure the single area of sample to be tested tested surface, the utility model directly can measure resistivity and the Seebeck coefficient of the zones of different of sample to be tested tested surface, the homogeneity of the performance of sample to be tested can be characterized, to the evaluation objective reality more of the performance of sample to be tested.
3) adopt direct current pulse power source replace traditional D.C. regulated power supply, can directly obtain forward current and inverse current, without the need to Non-follow control ER effect to, test process is easier.
4) this measurement device precision is high, measurement result is reproducible, simple and reliable and low cost of manufacture.
Therefore, the utility model can realize the resistivity in zones of different and the direct measurement of Seebeck coefficient to rectangular parallelepiped sample and cylindrical specimens, and measuring accuracy is high.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present utility model;
Fig. 2 is the right TV structure schematic diagram of Fig. 1;
Fig. 3 is the schematic top plan view of in Fig. 2 12;
Fig. 4 is the schematic top plan view of in Fig. 2 24;
Fig. 5 is a kind of circuit diagram of the present utility model.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model will be further described, the restriction not to its protection domain.
Embodiment 1
The measurement of a kind of semiconductor material resistivity and Seebeck coefficient.As depicted in figs. 1 and 2, this device is made up of jacking system, horizontal movement system and measuring system.For convenience of description, the present embodiment is with the left side of Fig. 2 for left side, and the left side of Fig. 1 is rear side.
The structure of described jacking system is as depicted in figs. 1 and 2:
Be fixed with two rectangular steel tubes 2 on rear side of the upper surface of base plate 1 symmetrically, in rectangular steel tube 2, lower bearing, nut type slide block 8, head bearing and end cap 10 be housed from lower to upper successively.The lower end of vertical screw mandrel 7 is arranged in lower bearing, and the middle part of vertical screw mandrel 7 is threaded with nut type slide block 8, and the upper end of vertical screw mandrel 7 passes head bearing and is fixedly connected with upper handwheel 11 with end cap 10.The front side of two rectangular steel tubes 2 vertically has bar hole 6, the bar hole 6 that one end of two horizon bars 9 is each passed through two corresponding rectangular steel tubes 2 is fixedly connected with nut type slide block 8, and the other end of two horizon bars 9 is fixedly connected with the upper surface of cold terminal electrodes 24 with corresponding hotter side electrode 12.
The structure of hotter side electrode 12 is as shown in Figure 3: hotter side electrode housing 28 is built with hot junction extension type potential probes 29, hot junction thermopair 26 and single head well heater 27; Hot junction extension type potential probes 29 is positioned at the anterior right side of hotter side electrode housing 28, hot junction thermopair 26 is positioned at the front left of hotter side electrode housing 28, single head well heater 27 is fixed on the middle position of hotter side electrode housing 28, the needle point of hot junction extension type potential probes 29 stretches out hotter side electrode housing 28 downwards, and the length that the needle point of hot junction extension type potential probes 29 stretches out hotter side electrode housing 28 is 5 ~ 8mm.
The structure of cold terminal electrodes 24 is as shown in Figure 4: cold terminal electrodes housing 31 is built with cold junction extension type potential probes 30 and cold junction thermopair 32; Cold junction extension type potential probes 30 is positioned at the front left of cold terminal electrodes housing 31, cold junction thermopair 32 is positioned at the anterior right side of cold terminal electrodes housing 31, the needle point of cold junction extension type potential probes 30 stretches out cold terminal electrodes housing 31 downwards, and the length that the needle point of cold junction extension type potential probes 30 stretches out cold terminal electrodes housing 31 is 5 ~ 8mm.
The structure of described horizontal movement system is as depicted in figs. 1 and 2:
The upper surface of base plate 1 is fixed with the upper surface two the first slide rail 21, two first slide rails 21 be parallel to each other being equipped with symmetrically two piece of first slide block, 3, four piece of first slide block 3 along the longitudinal direction and is fixed with one piece of first insulcrete 20; Two second slide rails 19 are fixed on the upper surface of the first insulcrete 20 in left-right direction abreast, two second slide rails 19 are equipped with two piece of second slide block 4 symmetrically, the upper surface of four piece of second slide block 4 is fixed with the upper surface that one piece of second insulcrete, 18, two the 3rd slide rails 17 are fixed on the second insulcrete 18 in left-right direction abreast; The upper surface two the 3rd slide rails 17 being equipped with symmetrically two piece of the 3rd slide block the 5, three slide block 5 is symmetrically equipped with on the 3rd insulcrete 16, two piece of the 3rd insulcrete 16 and holding electrode 13 is housed symmetrically.Fixed bar 15 is equipped with at two ends, the left and right place of the second insulcrete 18 symmetrically, fixed bar 15 upper end is provided with threaded hole, horizontal lead screw 25 is threaded with the threaded hole of fixed bar 15, lower handwheel 14 is equipped with in one end of horizontal lead screw 25, the other end of horizontal lead screw 25 is equipped with disk 22, and disk is contained in the outer side bayonet slot 23 of holding electrode 13.
The structure of described measuring system is as shown in Figure 5:
One piece of holding electrode 13 is connected with an output terminal of direct current pulse power source 33, and another block holding electrode 13 is connected with another output terminal of direct current pulse power source 33 by high accuracy number reometer 38.The positive pole of hot junction extension type potential probes 29 and cold junction extension type potential probes 30 and high accuracy number voltage table 34 and negative pole is corresponding is connected, hot junction thermopair 26 and cold junction thermopair 32 and the first thermometer 35 and the second thermometer 37 is corresponding is connected.
Utilize this device can realize the resistivity in zones of different and the direct measurement of Seebeck coefficient to rectangular parallelepiped sample or cylindrical specimens.The measuring method of described resistivity is:
First the tested surface of sample to be tested 36 is divided into n region to be measured, then sample to be tested 36 is put into clamping between holding electrode 13; Mobile second insulcrete 18 is or/and the first insulcrete 20, the 1st of sample to be tested 36 region to be measured is moved to immediately below hot junction extension type potential probes 29 and cold junction extension type potential probes 30, hot junction extension type potential probes 29 is contacted with the 1st region to be measured of sample to be tested 36 with the needle point of cold junction extension type potential probes 30.
Record high accuracy number voltage table 34 shows corresponding positive voltage and negative voltage, records high accuracy number reometer 38 simultaneously and shows corresponding forward current and inverse current.According to four probe method, obtain the resistivity in electric current forward stage and the resistivity of electric current reversal phase respectively; The mean value of the resistivity in described electric current forward stage and the resistivity of electric current reversal phase is the electricalresistivityρ in the 1st region to be measured
1.
By that analogy, the electricalresistivityρ in the 2nd region to be measured is recorded
2..., the electricalresistivityρ in the n-th region to be measured
n.
The measuring method of described Seebeck coefficient is:
First the tested surface of sample to be tested 36 is divided into n region to be measured, then sample to be tested 36 is put into clamping between holding electrode 13; Mobile second insulcrete 18 is or/and the first insulcrete 20, the 1st of sample to be tested 36 region to be measured is moved to immediately below hotter side electrode housing 28 and cold terminal electrodes housing 31, hotter side electrode housing 28 is contacted with the 1st region to be measured of sample to be tested 36 with the bottom surface of cold terminal electrodes housing 31.
Open single head well heater 27, be first intensification measurement point when being 4 DEG C with the temperature difference of the first thermometer 35 and the second thermometer 37, often raise 0.5 ~ 1 DEG C is a measurement point later, until terminate when the temperature difference of two deblocking temperature tables is greater than 10 DEG C.Record the temperature difference of two deblocking temperature tables of each measurement point, the voltage that the high accuracy number voltage table 34 simultaneously recording each measurement point shows.With the described temperature difference for horizontal ordinate and described voltage for ordinate is mapped, the slope of the straight line of linear fit is intensification Seebeck coefficient.
Close single head well heater 27, be first temperature measurement point when being 10 DEG C with the temperature difference of the first thermometer 35 and the second thermometer 37, often reduce by 0.5 ~ 1 DEG C is a measurement point later, until terminate when the temperature difference of two deblocking temperature tables is less than 4 DEG C.Record the temperature difference of two deblocking temperature tables of each measurement point, the voltage that the high accuracy number voltage table 34 simultaneously recording each measurement point shows.With the described temperature difference for horizontal ordinate and described voltage for ordinate is mapped, the slope of the straight line of linear fit is cooling Seebeck coefficient.
The mean value of described intensification Seebeck coefficient and cooling Seebeck coefficient is then the Seebeck coefficient α in the 1st region to be measured
1.
By that analogy, then the Seebeck coefficient α in the 2nd region to be measured is recorded
2..., the Seebeck coefficient α in the n-th region to be measured
n.
This embodiment compared with prior art has following good effect:
1) measurement mechanism of traditional precision resister rate and Seebeck coefficient can only measure lateral cross-sectional dimension is (2 ~ 5) × (2 ~ 5) mm
2with the rectangular parallelepiped small sample that longitudinal size is 5 ~ 20mm; and this embodiment is not only applicable to rectangular parallelepiped small sample; and be applicable to the cylindrical specimens of large-size and the rectangular parallelepiped sample of large-size; during measurement, sample to be tested 36 is without the need to destroying; the integrality of protection sample to be tested 36; simplified measurement program, meets measurement demand in enterprise production process.
2) measurement mechanism of traditional precision resister rate and Seebeck coefficient can only measure the single area of sample to be tested tested surface, this embodiment directly can measure resistivity and the Seebeck coefficient of the zones of different of sample to be tested 36 tested surface, the homogeneity of the performance of sample to be tested 36 can be characterized, to the evaluation objective reality more of the performance of sample to be tested 36.
3) adopt direct current pulse power source 33 replace traditional D.C. regulated power supply, can directly obtain forward current and inverse current, without the need to Non-follow control ER effect to, test process is easier.
4) this measurement device precision is high, measurement result is reproducible, simple and reliable and low cost of manufacture.
Therefore, this embodiment can realize the resistivity in zones of different and the direct measurement of Seebeck coefficient to rectangular parallelepiped sample and cylindrical specimens, and measuring accuracy is high.
Claims (1)
1. a measurement mechanism for semiconductor material resistivity and Seebeck coefficient, is characterized in that described measurement mechanism is made up of jacking system, horizontal movement system and measuring system;
The structure of described jacking system is:
Two rectangular steel tubes (2) are fixed with symmetrically on rear side of the upper surface of base plate (1), lower bearing, nut type slide block (8), head bearing and end cap (10) are housed in rectangular steel tube (2) from lower to upper successively, the lower end of vertical screw mandrel (7) is arranged in lower bearing, the middle part of vertical screw mandrel (7) is threaded with nut type slide block (8), and the upper end of vertical screw mandrel (7) passes head bearing and is fixedly connected with upper handwheel (11) with end cap (10); The front side of two rectangular steel tubes (2) vertically has bar hole (6), the bar hole (6) that one end of two horizon bars (9) is each passed through two corresponding rectangular steel tubes (2) is fixedly connected with nut type slide block (8), and the other end of two horizon bars (9) is fixedly connected with the upper surface of corresponding hotter side electrode (12) with cold terminal electrodes (24);
The structure of hotter side electrode (12) is: hotter side electrode housing (28) is built with hot junction extension type potential probes (29), hot junction thermopair (26) and single head well heater (27); Hot junction extension type potential probes (29) is positioned at the anterior right side of hotter side electrode housing (28), hot junction thermopair (26) is positioned at the front left of hotter side electrode housing (28), single head well heater (27) is fixed on the middle position of hotter side electrode housing (28), the needle point in hot junction extension type potential probes (29) stretches out hotter side electrode housing (28) downwards, and the length that the needle point in hot junction extension type potential probes (29) stretches out hotter side electrode housing (28) is 5 ~ 8mm;
The structure of cold terminal electrodes (24) is: cold terminal electrodes housing (31) is built with cold junction extension type potential probes (30) and cold junction thermopair (32); Cold junction extension type potential probes (30) is positioned at the front left of cold terminal electrodes housing (31), cold junction thermopair (32) is positioned at the anterior right side of cold terminal electrodes housing (31), the needle point of cold junction extension type potential probes (30) stretches out cold terminal electrodes housing (31) downwards, and the length that the needle point of cold junction extension type potential probes (30) stretches out cold terminal electrodes housing (31) is 5 ~ 8mm;
The structure of described horizontal movement system is:
The upper surface of base plate (1) is fixed with two the first slide rails (21) be parallel to each other along the longitudinal direction, two piece of first slide block (3) two first slide rails (21) be equipped with symmetrically, the upper surface of four piece of first slide block (3) is fixed with one piece of first insulcrete (20), two second slide rails (19) are fixed on the upper surface of the first insulcrete (20) in left-right direction abreast, two piece of second slide block (4) two second slide rails (19) be equipped with symmetrically, the upper surface of four piece of second slide block (4) is fixed with one piece of second insulcrete (18), two the 3rd slide rails (17) are fixed on the upper surface of the second insulcrete (18) in left-right direction abreast, two the 3rd slide rails (17) are equipped with two piece of the 3rd slide block (5) symmetrically, the upper surface of the 3rd slide block (5) is symmetrically equipped with the 3rd insulcrete (16), two piece of the 3rd insulcrete (16) is equipped with holding electrode (13) symmetrically, fixed bar (15) is equipped with at two ends, the left and right place of the second insulcrete (18) symmetrically, fixed bar (15) upper end is provided with threaded hole, horizontal lead screw (25) is threaded with the threaded hole of fixed bar (15), lower handwheel (14) is equipped with in one end of horizontal lead screw (25), the other end of horizontal lead screw (25) is equipped with disk (22), and disk is contained in the outer side bayonet slot (23) of holding electrode (13),
The structure of described measuring system is:
One piece of holding electrode (13) is connected with an output terminal of direct current pulse power source (33), and another block holding electrode (13) is connected by high accuracy number reometer (38) another output terminal with direct current pulse power source (33); The positive pole of hot junction extension type potential probes (29) and cold junction extension type potential probes (30) and high accuracy number voltage table (34) and negative pole is corresponding is connected, hot junction thermopair (26) and cold junction thermopair (32) and the first thermometer (35) and the second thermometer (37) is corresponding is connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521100404.4U CN205229306U (en) | 2015-12-24 | 2015-12-24 | Measurement device for semi conducting material resistivity and seebeck coefficient |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105486925A (en) * | 2015-12-24 | 2016-04-13 | 武汉科技大学 | Device for measuring resistivity and seebeck coefficient and usage method |
| CN107748291A (en) * | 2017-11-17 | 2018-03-02 | 长江大学 | Rock complex resistivity measurement apparatus and its system |
| CN108459046A (en) * | 2018-05-09 | 2018-08-28 | 哈尔滨工业大学 | The test device of film-type thermoelectric material Seebeck coefficient and conductivity |
| CN111948250A (en) * | 2020-08-13 | 2020-11-17 | 上海大学 | Variable temperature measuring device for high-flux thermoelectric material |
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2015
- 2015-12-24 CN CN201521100404.4U patent/CN205229306U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105486925A (en) * | 2015-12-24 | 2016-04-13 | 武汉科技大学 | Device for measuring resistivity and seebeck coefficient and usage method |
| CN105486925B (en) * | 2015-12-24 | 2018-01-23 | 武汉科技大学 | The device and its application method of a kind of measured resistivity and Seebeck coefficient |
| CN107748291A (en) * | 2017-11-17 | 2018-03-02 | 长江大学 | Rock complex resistivity measurement apparatus and its system |
| CN107748291B (en) * | 2017-11-17 | 2024-04-26 | 长江大学 | Rock complex resistivity measuring device and system thereof |
| CN108459046A (en) * | 2018-05-09 | 2018-08-28 | 哈尔滨工业大学 | The test device of film-type thermoelectric material Seebeck coefficient and conductivity |
| CN111948250A (en) * | 2020-08-13 | 2020-11-17 | 上海大学 | Variable temperature measuring device for high-flux thermoelectric material |
| CN111948250B (en) * | 2020-08-13 | 2023-01-13 | 上海大学 | Variable temperature measuring device for high-flux thermoelectric material |
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