CN205220702U - Digital infrared temperature sensors - Google Patents
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- CN205220702U CN205220702U CN201521122872.1U CN201521122872U CN205220702U CN 205220702 U CN205220702 U CN 205220702U CN 201521122872 U CN201521122872 U CN 201521122872U CN 205220702 U CN205220702 U CN 205220702U
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Abstract
Digital infrared temperature sensors. The utility model relates to a digital infrared temperature sensors. Infrared temperature sensors as rail vehicle axle temperature detection system core adopts analog signal to accomplish data transmission and order communication all the time. Analog signal anti -interference ability is poor, the unable data integration that realizes each passageway when using a plurality of sensors, system design dumb. Infrared temperature sensing element one -way transmission signal to signal amplification circuit, the signal amplification circuit one -way transmission signal extremely flush bonding processor, the temperature sensor one -way transmission of unit signal is unit's temperature converting circuit extremely, unit temperature converting circuit one -way transmission signal extremely flush bonding processor, flush bonding processor one -way transmission signal to school zero / shutter circuit, flush bonding processor one -way transmission signal to the circuit that refrigerates, refrigeration circuit one -way transmission signal to the component that refrigerates, flush bonding processor one -way transmission signal to network module. The utility model is used for infrared temperature sensors.
Description
Technical field
The utility model relates to a kind of digital infrared temperature sensor, is particularly applied to rolling stock axle temperature detection system.
Background technology
Rolling stock axle temperature intelligent detecting system (THDS) is as the important component part of vehicle operating safety monitoring system (5T), rail limit high-speed infrared temperature sensor and intelligent tracking device is utilized to detect the bearing temperature of operational vehicle in real time, carry out tracking to report to the police, can Timeliness coverage vehicle hot box, thus prevent overheating of axle bearing, be the important travelling facility guaranteeing safety of railway traffic.
Infrared temperature sensor as rolling stock axle temperature detection system core all adopts analog signal to complete data transmission and command communication all the time.Analog signal obstacle overcome ability is poor, and cannot realize the Data Integration of each passage when applying multiple sensor, system is dumb.
Summary of the invention
The purpose of this utility model is to provide a kind of digital infrared temperature sensor, by the existing infrared temperature sensor total digitalization based on analog signal transmission, the analog voltage signal collected by infrared temperature end instr converts to after digital signal through flush bonding processor and carries out digital data transmission by ethernet, and upper computer is also sent control by ethernet and adjusted order and realizes external control working sensor simultaneously.
above-mentioned object is realized by following technical scheme:
A kind of digital infrared temperature sensor, its composition comprises: infrared temperature end instr, flush bonding processor, unit's temperature sensor, refrigeration circuit, mixed-media network modules mixed-media, described infrared temperature end instr one-way transmission signal is to signal amplification circuit, described signal amplification circuit one-way transmission signal is to described flush bonding processor, described first temperature sensor one-way transmission signal is to first temperature change-over circuit, described unit's temperature change-over circuit one-way transmission signal is to described flush bonding processor, described flush bonding processor one-way transmission signal is to school zero/shutter circuit, described flush bonding processor one-way transmission signal is to refrigeration circuit, described refrigeration circuit one-way transmission signal is to cooling module, described flush bonding processor two-way transmission signals is to described mixed-media network modules mixed-media.
Described digital infrared temperature sensor, described unit temperature change-over circuit accept described in the signal of first temperature sensor to one end of resistance R2, one end of variable resistance RW1, one end of resistance R3 and electric capacity C1 one end, one end of described No. 1, the pin of resistance R2 parallel chip U1, No. 2, the pin of described chip U1 and resistance R1, the other end of the variable resistance RW1 described in other end connection of described resistance R1, the other end of the resistance R3 described in pin No. 6 parallel connections of described chip U1 and the other end of described electric capacity C1;
One end of No. 3, pin variable resistance RW2 in parallel of described chip U1 and one end of resistance R4, one end of the other end contact resistance R5 of described variable resistance RW2, No. 4, the pin of the chip U1 described in other end connection of described resistance R5, No. 4, the pin of the chip U1 described in other end connection of described resistance R4;
One end of one end of pin No. 7 parallel capacitance C2 of described chip U1, one end of resistance R8 and resistance R9, the other end ground connection of described resistance R8, one end of other end shunt resistance R10 of described resistance R9 and the normal phase input end of the U2 of op amp, one end of the equal contact resistance R11 of mouth of the inverting input of the U2 of described op amp and the U2 of described op amp, signal is reached described flush bonding processor by the other end of described resistance R11;
No. 8, the pin of described chip U1 connects the emitter e of NPN type triode Q1, the base stage b of the NPN type triode Q1 described in the connection of No. 9, pin of described chip U1, the collecting electrode c of the NPN type triode Q1 described in pin No. 10 parallel connections of described chip U1 and the other end of described electric capacity C2;
One end of the pin No. 12 contact resistance R6 of described chip U1, one end of the other end contact resistance R7 of described resistance R6, the signal of the first temperature sensor described in other end connection of described resistance R6;
The signal of the first temperature sensor described in No. 13, the pin of described chip U1 is all connected with No. 14, the pin of described chip U1.
Described digital infrared temperature sensor, the inverting input of signal to the U4 of op amp of the described infrared temperature end instr described in signal amplification circuit undertaking and one end of resistance R21, one end of normal phase input end shunt resistance R24 of the U4 of described op amp and one end of resistance R22, one end of the other end contact resistance R25 of described resistance R24, the other end ground connection of described resistance R25, the other end of the resistance R21 described in other end parallel connection of described resistance R22 and one end of resistance R23, the other end ground connection of described resistance R23;
One end of the mouth contact resistance R26 of the U4 of described op amp, one end of the other end shunt resistance R28 of described resistance R26, the inverting input of one end of electric capacity C7 and the U5 of op amp, the normal phase input end series resistance R27 of the U5 of described op amp, the other end of the resistance R28 described in mouth parallel connection of the U5 of described op amp, the other end of described electric capacity C7 and one end of resistance R29, the inverting input of the U6 of the other end concatenation operation amplifier of described resistance R29, resistance R30 and resistance R31, described resistance R30 parallel capacitance C8, described resistance R31 parallel capacitance C9, the normal phase input end contact resistance R32 of the U6 of described op amp, the mouth of U6 of the op amp after the described electric capacity C9 described in resistance R31 parallel connection described in parallel connection and one end of resistance R33, one end of the other end shunt resistance R34 of described resistance R33, one end of resistance R35 and one end of electric capacity C10, the other end ground connection of described resistance R34, one end of the other end contact resistance R36 of described electric capacity C10, the inverting input of the U7 of the other end op amp in parallel of described resistance R36, one end of variable resistance RW3 and one end of electric capacity C11, the normal phase input end of the U7 of the op amp described in other end connection of described resistance R35, the mouth of U7 of the op amp after described variable resistance RW3 is in parallel with described electric capacity C11 again described in parallel connection and one end of resistance R37, one end of the other end shunt resistance R38 of described resistance R37 and described flush bonding processor, the other end ground connection of described resistance R38.
Described digital infrared temperature sensor, described flush bonding processor sends control signal CTR, described control signal CTR passes to one end of resistance R13 in parallel and one end of resistance R12, the other end of described resistance R13 connects the base stage b of PNP type triode Q2, the other end of the resistance R12 described in emitter e connection of described PNP type triode Q2, the collecting electrode c of described PNP type triode Q2 connects the anode of relay K 1, series diode D1 between the anode of described relay K 1 and the negative terminal of described relay K 1, one end of school zero voltage JLV+ shunt resistance RV1 of described relay K 1 and one end of resistance R14, one end of the other end series capacity C3 of described resistance R14, the other end of the resistance RV1 described in other end parallel connection of described electric capacity C3, No. 9, the pin of described relay K 1 and No. 11, the pin of described relay K 1, electric capacity C4 is connected between No. 11, the pin of described relay K 1 and No. 6, the pin of described relay K 1, described electric capacity C4 connects No. 2, the pin of reed relay K2 and No. 6, the pin of described reed relay K2,
One end of the pin No. 1 contact resistance R15 of described reed relay K2, one end of other end parallel capacitance C5 of described resistance R15 and the inverting input of the U3 of op amp, one end of the normal phase input end contact resistance R16 of the U3 of described op amp, the other end ground connection of described resistance R16, the other end and the adjustment output signal JLOUT of the mouth parallel capacitance C5 of the U3 of described amplifier;
The U3 of described amplifier connects the emitter e of PNP type triode Q4, the other end of base stage b shunt resistance R19 of described PNP type triode Q4 and one end of resistance R20, the other end shunt voltage negative terminal of described resistance R20 and the collecting electrode c of described PNP type triode Q4;
The U3 of described amplifier connects the emitter e of NPN type triode Q3, one end of the collecting electrode c shunt resistance R17 of described NPN type triode Q3 and positive voltage terminal, the other end of the resistance R17 described in base stage b parallel connection of described NPN type triode Q3 and one end of resistance R18, the resistance R19 described in other end connection of described resistance R18.
Described digital infrared temperature sensor, described refrigeration circuit comprises integrated power supply module UP1, and the pin 1 of described integrated power supply module UP1, pin 4, pin 5, pin 30, pin 32, pin 33, pin 34 are connected with pin 37;
The pin 16 of described integrated power supply module UP1, pin 17, pin 18, pin 19, pin 20 ground connection equal to pin 40, the pin 27 of the integrated power supply module UP1 that one end of the pin 26 parallel capacitance C15 of described integrated power supply module UP1, electric capacity C14, electric capacity C13, electric capacity C12, resistance R40 and the other end parallel connection of voltage input end VIN, described resistance R40 are stated and resistance R39;
The pin 6 of described integrated power supply module UP1, pin 7, pin 21, pin 22, pin 23, pin 24, pin 38 are connected with pin 41, the pin 31 parallel capacitance C16 of described integrated power supply module UP1 and resistance R41, the pin 9 earth end of described integrated power supply module UP1 and one end of resistance R42, the pin 28 of described integrated power supply module UP1 connects one end of electric capacity C17, the pin 8 of the integrated power supply module UP1 described in the other end of described resistance R42 is connected afterwards with the other end parallel connection of described electric capacity C17;
The pin 36 of described integrated power supply module UP1 connects the pin 8 of digital regulation resistance M1, one end of the pin 35 contact resistance R43 of described integrated power supply module UP1, one end of other end shunt regulator diode DZ1 of described resistance R43 and one end of resistance R44, the other end ground connection of described zener diode DZ1, the other end of described resistance R44 connects voltage input end VIN, the pin 10 of described integrated power supply module UP1, pin 11, pin 12, pin 13, pin 14, parallel capacitance C18 after pin 15 is connected with pin 39, electric capacity C19, electric capacity C20, electric capacity C21, electric capacity C22 and refrigeration voltage output end vo ut, pin 9 and the pin 10 of the digital regulation resistance M1 of described electric capacity C19 also described in parallel connection.
Described digital infrared temperature sensor, described mixed-media network modules mixed-media is ethernet communication DM9000 module.
Described digital infrared temperature sensor, described flush bonding processor is the STM32 treater based on Cortex-M3 kernel.
Described digital infrared temperature sensor, described integrated power supply administration module is power supply apparatus model is LMZ35003.
beneficial effect:
1. the utility model is at the inner integrated embedded treater of traditional infrared temperature sensor, the A/D collecting unit utilizing flush bonding processor to carry completes sensor temperature analog voltage signal and first temperature acquisition of signal, prevent analog signal long-distance transmissions from introducing interference, improve the accuracy of temperature signal.
2. the utility model will can form the host-host protocol of unified standard and power interface is the prerequisite realizing infrared shaft temperature intelligent detecting system modular after infrared temperature sensor digitalisation, can realize the variation of system customization.
3. digital infrared temperature sensor data of the present utility model and control command all adopt TCP/IP network communication protocol, possess data check function, prevent signal distortion, improve the reliability of data and control command.
4. digital infrared temperature sensor of the present utility model can realize the Data Integration of multisensor fast, and each channel sensor signal does not interfere with each other, and system is more flexible.
accompanying drawing illustrates:
Accompanying drawing 1 is functional block diagram of the present utility model.
Accompanying drawing 2 is unit temperature change-over circuit figure of the present utility model.
Accompanying drawing 3 is school zero of the present utility model and shutter circuit diagram.
Accompanying drawing 4 is signal amplification circuit figure of the present utility model.
Accompanying drawing 5 is refrigeration circuit figure of the present utility model.
detailed description of the invention:
embodiment 1
Composition graphs 1 illustrates, a kind of digital infrared temperature sensor, its composition comprises: infrared temperature end instr, flush bonding processor, unit's temperature sensor, refrigeration circuit, mixed-media network modules mixed-media, described infrared temperature end instr one-way transmission signal is to signal amplification circuit, described signal amplification circuit one-way transmission signal is to described flush bonding processor, described first temperature sensor one-way transmission signal is to first temperature change-over circuit, described unit's temperature change-over circuit one-way transmission signal is to described flush bonding processor, described flush bonding processor one-way transmission signal is to school zero/shutter circuit, described flush bonding processor one-way transmission signal is to refrigeration circuit, described refrigeration circuit one-way transmission signal is to cooling module, described flush bonding processor two-way transmission signals is to described mixed-media network modules mixed-media.
embodiment 2
Composition graphs 2 illustrates, digital infrared temperature sensor described in embodiment 1, described unit temperature change-over circuit accept described in the signal of first temperature sensor to one end of resistance R2, one end of variable resistance RW1, one end of resistance R3 and electric capacity C1 one end, one end of described No. 1, the pin of resistance R2 parallel chip U1, No. 2, the pin of described chip U1 and resistance R1, the other end of the variable resistance RW1 described in other end connection of described resistance R1, the other end of the resistance R3 described in pin No. 6 parallel connections of described chip U1 and the other end of described electric capacity C1;
One end of No. 3, pin variable resistance RW2 in parallel of described chip U1 and one end of resistance R4, one end of the other end contact resistance R5 of described variable resistance RW2, No. 4, the pin of the chip U1 described in other end connection of described resistance R5, No. 4, the pin of the chip U1 described in other end connection of described resistance R4;
One end of one end of pin No. 7 parallel capacitance C2 of described chip U1, one end of resistance R8 and resistance R9, the other end ground connection of described resistance R8, one end of other end shunt resistance R10 of described resistance R9 and the normal phase input end of the U2 of op amp, one end of the equal contact resistance R11 of mouth of the inverting input of the U2 of described op amp and the U2 of described op amp, signal is reached described flush bonding processor by the other end of described resistance R11;
No. 8, the pin of described chip U1 connects the emitter e of NPN type triode Q1, the base stage b of the NPN type triode Q1 described in the connection of No. 9, pin of described chip U1, the collecting electrode c of the NPN type triode Q1 described in pin No. 10 parallel connections of described chip U1 and the other end of described electric capacity C2;
One end of the pin No. 12 contact resistance R6 of described chip U1, one end of the other end contact resistance R7 of described resistance R6, the signal of the first temperature sensor described in other end connection of described resistance R6;
The signal of the first temperature sensor described in No. 13, the pin of described chip U1 is all connected with No. 14, the pin of described chip U1.
Flush bonding processor completes infrared pickoff temperature simulation voltage signal and first temperature acquisition of signal by A/D collecting unit; The communication with mixed-media network modules mixed-media is completed by spi bus; I/O mouth is utilized to control school null circuit and shutter circuit working.Described A/D collecting unit, described I/O mouth and described spi bus interface are the parts of flush bonding processor.
embodiment 3
Composition graphs 4 illustrates, digital infrared temperature sensor described in embodiment 1, the inverting input of signal to the U4 of op amp of the described infrared temperature end instr described in signal amplification circuit undertaking and one end of resistance R21, one end of normal phase input end shunt resistance R24 of the U4 of described op amp and one end of resistance R22, one end of the other end contact resistance R25 of described resistance R24, the other end ground connection of described resistance R25, the other end of the resistance R21 described in other end parallel connection of described resistance R22 and one end of resistance R23, the other end ground connection of described resistance R23,
One end of the mouth contact resistance R26 of the U4 of described op amp, one end of the other end shunt resistance R28 of described resistance R26, the inverting input of one end of electric capacity C7 and the U5 of op amp, the normal phase input end series resistance R27 of the U5 of described op amp, the other end of the resistance R28 described in mouth parallel connection of the U5 of described op amp, the other end of described electric capacity C7 and one end of resistance R29, the inverting input of the U6 of the other end concatenation operation amplifier of described resistance R29, resistance R30 and resistance R31, described resistance R30 parallel capacitance C8, described resistance R31 parallel capacitance C9, the normal phase input end contact resistance R32 of the U6 of described op amp, the mouth of U6 of the op amp after the described electric capacity C9 described in resistance R31 parallel connection described in parallel connection and one end of resistance R33, one end of the other end shunt resistance R34 of described resistance R33, one end of resistance R35 and one end of electric capacity C10, the other end ground connection of described resistance R34, one end of the other end contact resistance R36 of described electric capacity C10, the inverting input of the U7 of the other end op amp in parallel of described resistance R36, one end of variable resistance RW3 and one end of electric capacity C11, the normal phase input end of the U7 of the op amp described in other end connection of described resistance R35, the mouth of U7 of the op amp after described variable resistance RW3 is in parallel with described electric capacity C11 again described in parallel connection and one end of resistance R37, one end of the other end shunt resistance R38 of described resistance R37 and described flush bonding processor, the other end ground connection of described resistance R38.
Unit's temperature sensor output signal becomes current signal through excess current conversion chip U1, current signal after aerotron Q1 amplifies is by becoming voltage signal after transfer resistance R8, and voltage signal outputs to the A/D unit of flush bonding processor be input to op amp U2 after dividing potential drop after.
embodiment 4
Composition graphs 3 illustrates, digital infrared temperature sensor described in embodiment 1, described flush bonding processor sends control signal CTR, described control signal CTR passes to one end of resistance R13 in parallel and one end of resistance R12, the other end of described resistance R13 connects the base stage b of PNP type triode Q2, the other end of the resistance R12 described in emitter e connection of described PNP type triode Q2, the collecting electrode c of described PNP type triode Q2 connects the anode of relay K 1, series diode D1 between the anode of described relay K 1 and the negative terminal of described relay K 1, one end of school zero voltage JLV+ shunt resistance RV1 of described relay K 1 and one end of resistance R14, one end of the other end series capacity C3 of described resistance R14, the other end of the resistance RV1 described in other end parallel connection of described electric capacity C3, No. 9, the pin of described relay K 1 and No. 11, the pin of described relay K 1, electric capacity C4 is connected between No. 11, the pin of described relay K 1 and No. 6, the pin of described relay K 1, described electric capacity C4 connects No. 2, the pin of reed relay K2 and No. 6, the pin of described reed relay K2,
One end of the pin No. 1 contact resistance R15 of described reed relay K2, one end of other end parallel capacitance C5 of described resistance R15 and the inverting input of the U3 of op amp, one end of the normal phase input end contact resistance R16 of the U3 of described op amp, the other end ground connection of described resistance R16, the other end and the adjustment output signal JLOUT of the mouth parallel capacitance C5 of the U3 of described amplifier;
The U3 of described amplifier connects the emitter e of PNP type triode Q4, the other end of base stage b shunt resistance R19 of described PNP type triode Q4 and one end of resistance R20, the other end shunt voltage negative terminal of described resistance R20 and the collecting electrode c of described PNP type triode Q4;
The U3 of described amplifier connects the emitter e of NPN type triode Q3, one end of the collecting electrode c shunt resistance R17 of described NPN type triode Q3 and positive voltage terminal, the other end of the resistance R17 described in base stage b parallel connection of described NPN type triode Q3 and one end of resistance R18, the resistance R19 described in other end connection of described resistance R18.
When upper computer by network to infrared temperature sensor send school zero order time, flush bonding processor sends control signal CTR control relay K1 adhesive, and school zero voltage JLV+, JLV-are input to reed relay K2 and make its conducting; The analog voltage signal that infrared temperature end instr exports is introduced by the pin 8 of reed relay K2, and this signal outputs to school null circuit at pin 1 after K2 conducting.The precision operational-amplifier U3 of school null circuit, according to incoming signal size adjustment output signal JLOUT, completes the zero-compensation operation of infrared temperature analog voltage signal school.
embodiment 5
Composition graphs 5 illustrates, digital infrared temperature sensor described in embodiment 1, described refrigeration circuit comprises integrated power supply module UP1, and the pin 1 of described integrated power supply module UP1, pin 4, pin 5, pin 30, pin 32, pin 33, pin 34 are connected with pin 37;
The pin 16 of described integrated power supply module UP1, pin 17, pin 18, pin 19, pin 20 ground connection equal to pin 40, the pin 27 of the integrated power supply module UP1 that one end of the pin 26 parallel capacitance C15 of described integrated power supply module UP1, electric capacity C14, electric capacity C13, electric capacity C12, resistance R40 and the other end parallel connection of voltage input end VIN, described resistance R40 are stated and resistance R39;
The pin 6 of described integrated power supply module UP1, pin 7, pin 21, pin 22, pin 23, pin 24, pin 38 are connected with pin 41, the pin 31 parallel capacitance C16 of described integrated power supply module UP1 and resistance R41, the pin 9 earth end of described integrated power supply module UP1 and one end of resistance R42, the pin 28 of described integrated power supply module UP1 connects one end of electric capacity C17, the pin 8 of the integrated power supply module UP1 described in the other end of described resistance R42 is connected afterwards with the other end parallel connection of described electric capacity C17;
The pin 36 of described integrated power supply module UP1 connects the pin 8 of digital regulation resistance M1, one end of the pin 35 contact resistance R43 of described integrated power supply module UP1, one end of other end shunt regulator diode DZ1 of described resistance R43 and one end of resistance R44, the other end ground connection of described zener diode DZ1, the other end of described resistance R44 connects voltage input end VIN, the pin 10 of described integrated power supply module UP1, pin 11, pin 12, pin 13, pin 14, parallel capacitance C18 after pin 15 is connected with pin 39, electric capacity C19, electric capacity C20, electric capacity C21, electric capacity C22 and refrigeration voltage output end vo ut, pin 9 and the pin 10 of the digital regulation resistance M1 of described electric capacity C19 also described in parallel connection.
For carrying out refrigeration control to infrared temperature sensor internal temperature sensitive element, flush bonding processor controls refrigeration voltage Vout by the resistance size changing the digital regulation resistance M1 output being connected to integrated power supply module UP1 output control terminal and exports size.Cooling module is connected in series to refrigeration voltage mouth, the size of current flowing through described cooling module by adjustment can make it be operated in stable low-temperature condition to improve detector sensitivity, detectivity and stability.
embodiment 6
Digital infrared temperature sensor described in embodiment 1, described mixed-media network modules mixed-media is ethernet communication DM9000 module.
embodiment 7
Digital infrared temperature sensor described in embodiment 1, described flush bonding processor is the STM32 treater based on Cortex-M3 kernel.
embodiment 8
Digital infrared temperature sensor described in embodiment 1, described integrated power supply administration module is power supply apparatus model is LMZ35003.
embodiment 9
Digital infrared temperature sensor described in embodiment 1, the analog voltage signal that infrared temperature end instr exports outputs to the A/D unit of flush bonding processor after amplifying respectively through gain amplifier U4, U5, U6, U7.Described gain amplifier U5 and school zero/shutter circuit form compensation feedback loop.
Certainly; above-mentioned explanation is not to restriction of the present utility model; the utility model is also not limited in above-mentioned citing, the change that those skilled in the art make in essential scope of the present utility model, remodeling, interpolation or replacement, also should belong to protection domain of the present utility model.
Claims (8)
1. a digital infrared temperature sensor, its composition comprises: infrared temperature end instr, flush bonding processor, unit's temperature sensor, refrigeration circuit, mixed-media network modules mixed-media, it is characterized in that: described infrared temperature end instr one-way transmission signal is to signal amplification circuit, described signal amplification circuit one-way transmission signal is to described flush bonding processor, described first temperature sensor one-way transmission signal is to first temperature change-over circuit, described unit's temperature change-over circuit one-way transmission signal is to described flush bonding processor, described flush bonding processor one-way transmission signal is to school zero/shutter circuit, described flush bonding processor one-way transmission signal is to refrigeration circuit, described refrigeration circuit one-way transmission signal is to cooling module, described flush bonding processor two-way transmission signals is to described mixed-media network modules mixed-media.
2. digital infrared temperature sensor according to claim 1, it is characterized in that: described unit temperature change-over circuit accept described in the signal of first temperature sensor to one end of resistance R2, one end of variable resistance RW1, one end of resistance R3 and one end of electric capacity C1, No. 1, the pin of described resistance R2 parallel chip U1, No. 2, the pin of described chip U1 and one end of resistance R1, the other end of the variable resistance RW1 described in other end connection of described resistance R1, the other end of the resistance R3 described in pin No. 6 parallel connections of described chip U1 and the other end of described electric capacity C1,
One end of No. 3, pin variable resistance RW2 in parallel of described chip U1 and one end of resistance R4, one end of the other end contact resistance R5 of described variable resistance RW2, No. 4, the pin of the chip U1 described in other end connection of described resistance R5, No. 4, the pin of the chip U1 described in other end connection of described resistance R4;
One end of one end of pin No. 7 parallel capacitance C2 of described chip U1, one end of resistance R8 and resistance R9, the other end ground connection of described resistance R8, one end of other end shunt resistance R10 of described resistance R9 and the normal phase input end of the U2 of op amp, one end of the equal contact resistance R11 of mouth of the inverting input of the U2 of described op amp and the U2 of described op amp, signal is reached described flush bonding processor by the other end of described resistance R11;
No. 8, the pin of described chip U1 connects the emitter e of NPN type triode Q1, the base stage b of the NPN type triode Q1 described in the connection of No. 9, pin of described chip U1, the collecting electrode c of the NPN type triode Q1 described in pin No. 10 parallel connections of described chip U1 and the other end of described electric capacity C2;
One end of the pin No. 12 contact resistance R6 of described chip U1, one end of the other end contact resistance R7 of described resistance R6, the signal of the first temperature sensor described in other end connection of described resistance R6;
The signal of the first temperature sensor described in No. 13, the pin of described chip U1 is all connected with No. 14, the pin of described chip U1.
3. digital infrared temperature sensor according to claim 1, it is characterized in that: the inverting input of signal to the U4 of op amp of the described infrared temperature end instr described in signal amplification circuit undertaking and one end of resistance R21, one end of normal phase input end shunt resistance R24 of the U4 of described op amp and one end of resistance R22, one end of the other end contact resistance R25 of described resistance R24, the other end ground connection of described resistance R25, the other end of the resistance R21 described in other end parallel connection of described resistance R22 and one end of resistance R23, the other end ground connection of described resistance R23,
One end of the mouth contact resistance R26 of the U4 of described op amp, one end of the other end shunt resistance R28 of described resistance R26, the inverting input of one end of electric capacity C7 and the U5 of op amp, the normal phase input end series resistance R27 of the U5 of described op amp, the other end of the resistance R28 described in mouth parallel connection of the U5 of described op amp, the other end of described electric capacity C7 and one end of resistance R29, the inverting input of the U6 of the other end concatenation operation amplifier of described resistance R29, resistance R30 and resistance R31, described resistance R30 parallel capacitance C8, described resistance R31 parallel capacitance C9, the normal phase input end contact resistance R32 of the U6 of described op amp, the mouth of U6 of the op amp after the described electric capacity C9 described in resistance R31 parallel connection described in parallel connection and one end of resistance R33, one end of the other end shunt resistance R34 of described resistance R33, one end of resistance R35 and one end of electric capacity C10, the other end ground connection of described resistance R34, one end of the other end contact resistance R36 of described electric capacity C10, the inverting input of the U7 of the other end op amp in parallel of described resistance R36, one end of variable resistance RW3 and one end of electric capacity C11, the normal phase input end of the U7 of the op amp described in other end connection of described resistance R35, the mouth of U7 of the op amp after described variable resistance RW3 is in parallel with described electric capacity C11 again described in parallel connection and one end of resistance R37, one end of the other end shunt resistance R38 of described resistance R37 and described flush bonding processor, the other end ground connection of described resistance R38.
4. digital infrared temperature sensor according to claim 1, it is characterized in that: described flush bonding processor sends control signal CTR, described control signal CTR passes to one end of resistance R13 in parallel and one end of resistance R12, the other end of described resistance R13 connects the base stage b of PNP type triode Q2, the other end of the resistance R12 described in emitter e connection of described PNP type triode Q2, the collecting electrode c of described PNP type triode Q2 connects the anode of relay K 1, series diode D1 between the anode of described relay K 1 and the negative terminal of described relay K 1, one end of school zero voltage JLV+ shunt resistance RV1 of described relay K 1 and one end of resistance R14, one end of the other end series capacity C3 of described resistance R14, the other end of the resistance RV1 described in other end parallel connection of described electric capacity C3, No. 9, the pin of described relay K 1 and No. 11, the pin of described relay K 1, electric capacity C4 is connected between No. 11, the pin of described relay K 1 and No. 6, the pin of described relay K 1, described electric capacity C4 connects No. 2, the pin of reed relay K2 and No. 6, the pin of described reed relay K2,
One end of the pin No. 1 contact resistance R15 of described reed relay K2, one end of other end parallel capacitance C5 of described resistance R15 and the inverting input of the U3 of op amp, one end of the normal phase input end contact resistance R16 of the U3 of described op amp, the other end ground connection of described resistance R16, the other end and the adjustment output signal JLOUT of the mouth parallel capacitance C5 of the U3 of described amplifier;
The U3 of described amplifier connects the emitter e of PNP type triode Q4, the other end of base stage b shunt resistance R19 of described PNP type triode Q4 and one end of resistance R20, the other end shunt voltage negative terminal of described resistance R20 and the collecting electrode c of described PNP type triode Q4;
The U3 of described amplifier connects the emitter e of NPN type triode Q3, one end of the collecting electrode c shunt resistance R17 of described NPN type triode Q3 and positive voltage terminal, the other end of the resistance R17 described in base stage b parallel connection of described NPN type triode Q3 and one end of resistance R18, the resistance R19 described in other end connection of described resistance R18.
5. digital infrared temperature sensor according to claim 1, it is characterized in that: described refrigeration circuit comprises integrated power supply module UP1, the pin 1 of described integrated power supply module UP1, pin 4, pin 5, pin 30, pin 32, pin 33, pin 34 are connected with pin 37;
The pin 16 of described integrated power supply module UP1, pin 17, pin 18, pin 19, pin 20 ground connection equal to pin 40, the pin 27 of the integrated power supply module UP1 that one end of the pin 26 parallel capacitance C15 of described integrated power supply module UP1, electric capacity C14, electric capacity C13, electric capacity C12, resistance R40 and the other end parallel connection of voltage input end VIN, described resistance R40 are stated and resistance R39;
The pin 6 of described integrated power supply module UP1, pin 7, pin 21, pin 22, pin 23, pin 24, pin 38 are connected with pin 41, the pin 31 parallel capacitance C16 of described integrated power supply module UP1 and resistance R41, the pin 9 earth end of described integrated power supply module UP1 and one end of resistance R42, the pin 28 of described integrated power supply module UP1 connects one end of electric capacity C17, the pin 8 of the integrated power supply module UP1 described in the other end of described resistance R42 is connected afterwards with the other end parallel connection of described electric capacity C17;
The pin 36 of described integrated power supply module UP1 connects the pin 8 of digital regulation resistance M1, one end of the pin 35 contact resistance R43 of described integrated power supply module UP1, one end of other end shunt regulator diode DZ1 of described resistance R43 and one end of resistance R44, the other end ground connection of described zener diode DZ1, the other end of described resistance R44 connects voltage input end VIN, the pin 10 of described integrated power supply module UP1, pin 11, pin 12, pin 13, pin 14, parallel capacitance C18 after pin 15 is connected with pin 39, electric capacity C19, electric capacity C20, electric capacity C21, electric capacity C22 and refrigeration voltage output end vo ut, pin 9 and the pin 10 of the digital regulation resistance M1 of described electric capacity C19 also described in parallel connection.
6. digital infrared temperature sensor according to claim 1, is characterized in that: described mixed-media network modules mixed-media is ethernet communication DM9000 module.
7. digital infrared temperature sensor according to claim 1, is characterized in that: described flush bonding processor is the STM32 treater based on Cortex-M3 kernel.
8. digital infrared temperature sensor according to claim 5, is characterized in that: described integrated power supply administration module is power supply apparatus model is LMZ35003.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105539503A (en) * | 2015-12-31 | 2016-05-04 | 哈尔滨威克科技有限公司 | Digital infrared temperature sensor |
| CN105539503B (en) * | 2015-12-31 | 2017-11-07 | 哈尔滨威克科技有限公司 | Digital infrared temperature sensor |
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