CN205220026U - Half tone structure of reducible hourglass thick liquid - Google Patents

Half tone structure of reducible hourglass thick liquid Download PDF

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Publication number
CN205220026U
CN205220026U CN201521029133.8U CN201521029133U CN205220026U CN 205220026 U CN205220026 U CN 205220026U CN 201521029133 U CN201521029133 U CN 201521029133U CN 205220026 U CN205220026 U CN 205220026U
Authority
CN
China
Prior art keywords
half tone
silicon chip
edge
region
male portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201521029133.8U
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Chinese (zh)
Inventor
罗茂盛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGYIN XINHUI SOLAR ENERGY CO Ltd
Original Assignee
JIANGYIN XINHUI SOLAR ENERGY CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGYIN XINHUI SOLAR ENERGY CO Ltd filed Critical JIANGYIN XINHUI SOLAR ENERGY CO Ltd
Priority to CN201521029133.8U priority Critical patent/CN205220026U/en
Application granted granted Critical
Publication of CN205220026U publication Critical patent/CN205220026U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model provides a half tone structure of reducible hourglass thick liquid, it makes problem that the edge leaks the thick liquid reduce substantially, and the life increase substantially of half tone has reduced the cost of half tone. It includes half tone, silicon chip, the image area of half tone is located directly over the silicon chip, the fringe region all around of silicon chip expose in the image area of half tone, the edge all around of half tone covers the fringe region all around of silicon chip, the orientation of edge all around of half tone the one side of silicon chip is protruding under for image area, and is concrete for convex part branch down, the lower protruding thickness of convex part branch is 5 mu m~50 mu m down, the inside area territory of convex part branch is hugged closely down the up end of the corresponding position of fringe region all around of silicon chip.

Description

A kind of screen structure reducing spillage
Technical field
The utility model relates to the technical field of solar cell manufacturing equipment, is specially a kind of screen structure reducing spillage.
Background technology
In solar cell manufacturing process, half tone cost accounts for a part larger in integral battery door manufacturing cost, improves half tone service life, can significantly reduce half tone cost.The general method improving half tone is that people, for sticking the modes such as adhesive tape, can alleviate the decline of half tone tension force around half tone at present, reduces the phenomenon collapsing net.But the spillage phenomenon of half tone is not improved.
In actual production process, it is because spillage that half tone is scrapped over half in reason, especially with the half tone edge spillage of silicon chip contact site.In printing process, because the difference in height between silicon chip and printing table, this step can be met in scraper traveling process, cause half tone and silicon chip edge contact position very easily to wear and tear, cause half tone photoresists to wear and tear and cause spillage.
Summary of the invention
For the problems referred to above, the utility model provides a kind of screen structure reducing spillage, and it makes the problem of edge spillage significantly reduce, and the service life of half tone increases considerably, and reduces the cost of half tone.
A kind of screen structure reducing spillage, its technical scheme is such: it comprises half tone, silicon chip, the graphics field of described half tone is positioned at directly over described silicon chip, the region, edge of described silicon chip exposes to the graphics field of described half tone, the edge of described half tone covers the region, edge of described silicon chip, the edge of described half tone towards the one side of described silicon chip relative to convex under graphics field, be specially lower male portion, the lower convex thickness of described lower male portion is 5 μm ~ 50 μm, the inside region of described lower male portion is close to the upper surface of the correspondence position in the region, edge of described silicon chip.
It is further characterized in that:
The width in the region, edge of described silicon chip is 1.5mm, namely the outward flange of the graphics field of described half tone is 1.5mm to the outer peripheral distance of the described silicon chip of respective side, the inner side original position of described lower male portion is positioned at half tone graphics field and stretches out 1mm place, and the inside region of described lower male portion is close to the Outboard Sections region of the upper surface of the correspondence position in the region, edge of described silicon chip; The 1mm distance reserved can guarantee that scraper traveling process not easily scrapes lower male portion, and then guarantees that lower male portion is not easily worn, and ensures the life-span of half tone further;
The integral thickness of described half tone is 15 μm.
After adopting technique scheme, use the half tone that this edge thickness increases, the problem of edge spillage significantly reduces, the service life of half tone increases considerably, compared with conventional half tone, the problem of edge spillage solves substantially, and the half tone life-span improves more than 20%, half tone cost significantly declines, and significantly reduces battery manufacture cost.
Accompanying drawing explanation
Fig. 1 is plan structure simplified schematic diagram of the present utility model;
Fig. 2 be of the present utility model analyse and observe main look partial enlargement structural representation
Title in figure corresponding to sequence number is as follows:
Half tone 1, silicon chip 2, silicon chip 3, region, edge 4, edge 5, lower male portion 6.
Detailed description of the invention
A kind of screen structure reducing spillage, see Fig. 1, Fig. 2: it comprises half tone 1, silicon chip 2, the graphics field 2 of half tone 1 is positioned at directly over silicon chip 3, the region, edge 4 of silicon chip 3 exposes to the graphics field 2 of half tone 1, the edge 5 of half tone 1 covers the region, edge 4 of silicon chip 3, the edge 5 of half tone 1 is convex relative to graphics field 2 times towards the one side of silicon chip 3, be specially lower male portion 6, the lower convex thickness of lower male portion 6 is 5 μm ~ 50 μm, and the inside region of lower male portion 6 is close to the upper surface of the correspondence position in the region, edge 4 of silicon chip 3.
The width L in the region, edge 4 of silicon chip 3 is 1.5mm, namely the outward flange of the graphics field 2 of half tone 1 is 1.5mm to the outer peripheral distance of the silicon chip 3 of respective side, the graphics field 2 that the inner side original position of lower male portion 6 is positioned at half tone 1 stretches out 1mm place, and the inside region of lower male portion 6 is close to the Outboard Sections region of the upper surface of the correspondence position in the region, edge 4 of silicon chip 3; The 1mm distance reserved can guarantee that scraper traveling process not easily scrapes lower male portion, and then guarantees that lower male portion is not easily worn, and ensures the life-span of half tone further.
Specific embodiment, the size of the graphics field 2 of half tone 1 is generally at 153mm × 153mm, and the size of silicon chip 3 is at 156mm × 156mm, the graphics field 2 of half tone 1 is from the distance of each marginal existence 1.5mm of silicon chip 3, outside the scope of half tone 1 center 155mm × 155mm, 25-40 μm is designed to silicon chip 3 contact surface thickness, and corresponding to graphics field 2 printed pattern region 153mm × 153mm scope, thickness design remains unchanged, still make according to technical requirement, general at about 15 μm, the half tone of such design is reached the standard grade and is normally printed, can find that the phenomenon of edge spillage reduces greatly.
Above specific embodiment of the utility model has been described in detail, but content being only the preferred embodiment that the utility model is created, the practical range created for limiting the utility model can not being considered to.All equalizations done according to the utility model creation application range change and improve, and all should still belong within patent covering scope of the present utility model.

Claims (3)

1. one kind can be reduced the screen structure of spillage, it comprises half tone, silicon chip, the graphics field of described half tone is positioned at directly over described silicon chip, the region, edge of described silicon chip exposes to the graphics field of described half tone, the edge of described half tone covers the region, edge of described silicon chip, it is characterized in that: the edge of described half tone towards the one side of described silicon chip relative to convex under graphics field, be specially lower male portion, the lower convex thickness of described lower male portion is 5 μm ~ 50 μm, the inside region of described lower male portion is close to the upper surface of the correspondence position in the region, edge of described silicon chip.
2. a kind of screen structure reducing spillage as claimed in claim 1, it is characterized in that: the width in the region, edge of described silicon chip is 1.5mm, namely the outward flange of the graphics field of described half tone is 1.5mm to the outer peripheral distance of the described silicon chip of respective side, the inner side original position of described lower male portion is positioned at half tone graphics field and stretches out 1mm place, and the inside region of described lower male portion is close to the Outboard Sections region of the upper surface of the correspondence position in the region, edge of described silicon chip.
3. a kind of screen structure reducing spillage as claimed in claim 1 or 2, is characterized in that: the integral thickness of described half tone is 15 μm.
CN201521029133.8U 2015-12-11 2015-12-11 Half tone structure of reducible hourglass thick liquid Expired - Fee Related CN205220026U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201521029133.8U CN205220026U (en) 2015-12-11 2015-12-11 Half tone structure of reducible hourglass thick liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201521029133.8U CN205220026U (en) 2015-12-11 2015-12-11 Half tone structure of reducible hourglass thick liquid

Publications (1)

Publication Number Publication Date
CN205220026U true CN205220026U (en) 2016-05-11

Family

ID=55895117

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201521029133.8U Expired - Fee Related CN205220026U (en) 2015-12-11 2015-12-11 Half tone structure of reducible hourglass thick liquid

Country Status (1)

Country Link
CN (1) CN205220026U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109130454A (en) * 2018-08-24 2019-01-04 常州亚龙电子科技有限公司 A kind of the adhesive tape attaching method and screen printing screens of screen printing screens

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109130454A (en) * 2018-08-24 2019-01-04 常州亚龙电子科技有限公司 A kind of the adhesive tape attaching method and screen printing screens of screen printing screens

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160511

Termination date: 20181211