CN205212950U

CN205212950U - Image device with but regionalized bolometer

Info

Publication number: CN205212950U
Application number: CN201390001124.0U
Authority: CN
Inventors: M·纳斯迈耶; E·A·库尔特; N·霍根斯特恩; T·R·赫尔特; K·斯特兰德玛; P·布朗热; B·夏普
Original assignee: Flir Systems Inc
Current assignee: Teledyne Flir LLC
Priority date: 2012-12-26
Filing date: 2013-12-24
Publication date: 2016-05-04
Anticipated expiration: 2023-12-24
Also published as: WO2014105897A1

Abstract

Image device with but regionalized bolometer is disclosed to allow FPA to be configured as various specifications and/or pixel size. For example, according to one or more embodiment, changeable interconnection can be implemented in FPA, wherein changeable interconnection include a plurality of switches, it is suitable for the infrared sensor with FPA to be connected or to break off with column rule, alignment optionally to infrared sensor optionally connection or disconnection each other with FPA. This changeable interconnection can also be including being suitable for another cluster switch that links together neighbouring alignment optionally. Through optionally open with closed changeable interconnection in appropriate switch, two or more a plurality of adjacent infrared sensor can regionalized together to form regionalized's detector. Advantageously, this regionalized's detector and array and relevant circuit can provide the susceptibility of increase, the power consumption of reduction and/or the frame rate of increase.

Description

Having can the imaging device of compartmentalization bolometer

The cross reference of related application

This application claims that on December 31st, 2012 submits to and name is called the U.S. Provisional Patent Application No.61/748 of " INFRAREDDETECTORARRAYWITHSELECTABLEPIXELBINNINGSYSTEMSAN DMETHODS ", the rights and interests of 012, it is incorporated in herein by quoting entirety.

The application submits on December 9th, 2013 and name is called the U.S. Patent application No.14/101 of " LOWPOWERANDSMALLFORMFACTORINFRAREDIMAGING ", and the part continuation application of 245, it is incorporated in herein by quoting entirety.

The application submits on December 6th, 2013 and name is called the U.S. Patent application No.14/099 of " NON-UNIFORMITYCORRECTIONTECHNIQUESFORINFRAREDIMAGINGDEVI CES ", the part continuation application of 818, it is incorporated in herein by quoting entirety.

The application submits on December 9th, 2013 and name is called the U.S. Patent application No.14/101 of " INFRAREDCAMERASYSTEMARCHITECTURES ", and the part continuation application of 258, it is incorporated in herein by quoting entirety.

The application submits on December 21st, 2013 and name is called the part continuation application of the U.S. Patent application of " COMPACTMULTI-SPECTRUMIMAGINGWITHFUSION ", and it is incorporated in herein by quoting entirety.

U.S. Patent application No.14/138,058 requires that on December 31st, 2012 submits to and name is called the U.S. Provisional Patent Application No.61/748 of " COMPACTMULTI-SPECTRUMIMAGINGWITHFUSION ", the rights and interests of 018, it is incorporated in herein by quoting entirety.

The application submits on December 21st, 2013 and name is called the U.S. Patent application No.14/138 of " TIMESPACEDINFRAREDIMAGEENHANCEMENT ", and the part continuation application of 040, it is incorporated in herein by quoting entirety.

U.S. Patent application No.14/138,040 requires that on May 15th, 2013 submits to and name is called the U.S. Provisional Patent Application No.61/792 of " TIMESPACEDINFRAREDIMAGEENHANCEMENT ", the rights and interests of 582, it is incorporated in herein by quoting entirety.

U.S. Patent application No.14/138,040 also requires that on December 26th, 2012 submits to and name is called the U.S. Provisional Patent Application No.61/746 of " TIMESPACEDINFRAREDIMAGEENHANCEMENT ", the rights and interests of 069, it is incorporated in herein by quoting entirety.

The application submits on December 21st, 2013 and name is called the U.S. Patent application No.14/138 of " INFRAREDIMAGINGENHANCEMENTWITHFUSION ", and the part continuation application of 052, it is incorporated in herein by quoting entirety.

U.S. Patent application No.14/138,052 requires that on March 15th, 2013 submits to and name is called the U.S. Provisional Patent Application No.61/793 of " INFRAREDIMAGINGENHANCEMENTWITHFUSION ", the rights and interests of 952, it is incorporated in herein by quoting entirety.

U.S. Patent application No.14/138,052 also requires that on December 26th, 2012 submits to and name is called the U.S. Provisional Patent Application No.61/746 of " INFRAREDIMAGINGENHANCEMENTWITHFUSION ", the rights and interests of 074, it is incorporated in herein by quoting entirety.

Technical field

One or more execution mode of the present utility model relates generally to thermal imaging device, more specifically, relates to the infrared detector array such as with selectable pixel region structure.

Background technology

Micro-metering bolometer structure is prepared usually on one chip silicon substrate, and to form micro-metering bolometer array, wherein each micro-metering bolometer plays the work of pixel in order to produce two dimensional image.The change of each micro-metering bolometer resistance changes into the time-division multiplex signal of telecommunication by being called as the circuit reading integrated circuit (ROIC).The combination of ROIC and micro-metering bolometer array is commonly called microbolometer FPA array (FPA).

Micro-metering bolometer array typically provides the static array of preliminary dimension, and for example, such as have the array that 320 row 256 arrange, it represents the micro-metering bolometer array (that is, 81920 pixels) of 320*256.Therefore, the possible shortcoming of the micro-metering bolometer of this general type is that Pixel Dimensions is fixed together with relevant infrared camera performance parameter with array sizes.Therefore, need to improve the technology for implementing microbolometer FPA array.

Utility model content

Provide two or more infrared sensors that various technology carrys out compartmentalization (such as, cluster or grouping) focal plane array (FPA), formed all size and/or Pixel Dimensions to allow the knot of FPA.Such as, according to one or more execution mode, changeable interconnection can be implemented in FPA, wherein changeable interconnection comprises multiple switch, the plurality of switch is suitable for selectively being connected with alignment, line by the infrared sensor of FPA or disconnecting, and is selectively connected among each other by the infrared sensor of FPA or disconnect.Changeable interconnection can also comprise another group switch, and this another group switch is suitable for contiguous alignment selectively to link together.By the suitable switches of the selectively changeable interconnection of open and close, can by the detector of two or more adjacent infrared sensor compartmentalizations forming region together.Advantageously, the detector of compartmentalization and array and relevant Circuits System can provide the frame rate of the susceptibility of increase, the power consumption of minimizing and/or increase.

In one embodiment, have and the imaging device of compartmentalization bolometer can comprise the focal plane array (FPA) of the picture frame being suitable for capturing scenes, this FPA comprises: multiple bolometer, and it is arranged to array; Multiple alignment, it is suitable for providing bias voltage to bolometer; Multirow line, it is suitable for providing reference voltage level bolometer; Multiple first switch, it is suitable for selectively connecting two or more to divide into groups in bolometer of two or more adjacent alignments, thus the bolometer of forming region in an array.Focal plane array also comprises: multiple second switch, and it is suitable for some in bolometer to be selectively connected to line; Multiple 3rd switch, it is suitable for some in bolometer to be selectively connected to alignment; Multiple 4th switch, it is suitable for selectively being connected in series some in bolometer, wherein first, second, third and fourth switch is suitable for opening or closed with by two or more compartmentalizations every in adjacent bolometer together, thus the detector of forming region.

In another embodiment, the method of the bolometer of a kind of compartmentalization FPA is suitable for the one-tenth picture frame of capturing scenes, the method comprises: use multiple first switch selectable to connect the alignment of the vicinity of FPA with selecting, wherein alignment is suitable for providing bias voltage to bolometer; Use multiple second switch some in bolometer to be selectively connected to the line of FPA, wherein line is suitable for providing reference voltage to bolometer; Use multiple 3rd switch that some in bolometer are selectively connected to alignment; And some using multiple 4th switch selectable to be connected in series in bolometer with selecting, first, second, third and fourth switch is wherein used selectively to link together, every two or more in adjacent bolometer with the detector of forming region.

Scope of the present utility model is defined by the claims, and this part is herein incorporated by way of reference.By detailed description to one or more execution mode below considering, the realization of more complete understanding to the utility model execution mode and wherein additional advantage will be provided to those skilled in the art.Below with reference to the accompanying drawing that first can briefly describe.

Accompanying drawing explanation

Fig. 1 show according to disclosure execution mode, be configured to the infrared imaging module that realizes in the host device.

Fig. 2 show according to disclosure execution mode, assembling after infrared imaging module.

Fig. 3 shows according to embodiment of the present disclosure, the arranged side by side exploded view being placed in the infrared imaging module on socket.

Fig. 4 show according to embodiment of the present disclosure, the block diagram of the infrared sensor package that comprises infrared array sensor.

Fig. 5 show according to disclosure execution mode, the flow chart of determining the various operations of nonuniformity correction (NUC) item.

Fig. 6 show according to disclosure execution mode, difference between neighbor.

Fig. 7 shows the flat field correction technology according to disclosure execution mode.

Fig. 8 show according to disclosure execution mode, the various image processing techniques of the Fig. 5 be applied in image processing pipeline and other operations.

Fig. 9 shows the noise in time domain reduction step according to disclosure execution mode.

Figure 10 show according to disclosure execution mode, the concrete implementation detail of several steps of the image processing pipeline of Fig. 8.

Figure 11 shows the fixed pattern noise (FPN) according to the space correlation in disclosure execution mode, neighbouring pixel.

Figure 12 show according to disclosure execution mode, the block diagram of another implementation of the infrared sensor package that comprises infrared array sensor and low-dropout regulator.

Figure 13 show according to disclosure execution mode, the circuit diagram of the part of the infrared sensor package of Figure 12.

Figure 14 show according to disclosure execution mode, the block diagram of another implementation of the infrared sensor package that comprises infrared array sensor.

Figure 15 show according to disclosure execution mode, the infrared sensor package that uses Figure 14 of compartmentalization technical configuration.

Figure 16 show according to disclosure execution mode, the block diagram of the part of the infrared sensor package of Figure 14.

Figure 17-19 show according to disclosure execution mode, with the circuit diagram of Figure 16 of the first mode operated configuration.

Figure 20 show according to disclosure execution mode, with the circuit diagram of the Figure 16 of the second pattern configurations operated.

Figure 21 show according to disclosure execution mode, with reference to the sequential chart of the first and second patterns for operating of Figure 17-20.

By reference to detailed description below, will better understand execution mode of the present utility model and advantage thereof.Should be understood that, identical reference number is for representing the similar elements shown in a pair or several accompanying drawings.

Embodiment

Fig. 1 show according to disclosure execution mode, be configured in host apparatus 102 realize infrared imaging module 100 (such as, infrared camera or infreared imaging device).In one or more execution mode, according to Wafer level packaging or other encapsulation technologies, the infrared imaging module 100 of little form factor can be realized.

In one embodiment, infrared imaging module 100 can be configured to realize in small-sized portable host apparatus 102, such as, mobile phone, tablet personal computer device, laptop devices, personal digital assistant, visible light camera, music player or any other suitable mobile device.With regard to this respect, infrared imaging module 100 can be used for providing infrared imaging function to host apparatus 102.Such as, infrared imaging module 100 can be configured to catch, process and/or manage infrared image, and this infrared image is supplied to host apparatus 102, host apparatus 102 can use this infrared image (such as, be further processed this infrared image, be stored in memory, show, used by the various application programs operated in host apparatus 102, output to other devices or other application) in any desired way.

In various embodiments, infrared imaging module 100 can be configured to work in low voltage level and wide temperature range.Such as, in one embodiment, infrared imaging module 100 can use the power work of about 2.4 volts, 2.5 volts, 2.8 volts or lower voltage, and can work (such as, providing suitable dynamic range and performance in the ambient temperature range of about 80 DEG C) in the temperature range of about-20 DEG C to about+60 DEG C.In one embodiment, by making infrared imaging module 100 work under low voltage level, compared with the infreared imaging device of other types, the heat that infrared imaging module 100 self produces is less.Therefore, infrared imaging module 100 operationally, can utilize the measure of simplification to compensate this heat self produced.

As shown in Figure 1, host apparatus 102 can comprise socket 104, shutter 105, motion sensor 194, processor 195, memory 196, display 197 and/or miscellaneous part 198.Socket 104 can be configured to reception infrared imaging module 100 as shown by an arrow 101.With regard to this respect, Fig. 2 show according to disclosure execution mode, the infrared imaging module 100 be assemblied in socket 104.

Other suitable devices of motion of host apparatus 102 can be detected to realize motion sensor 194 by one or more accelerometer, gyroscope or can be used for.Processing module 160 or processor 195 can monitor motion sensor 194 and motion sensor 194 provides information, to detect motion to processing module 160 or processor 195.In various embodiments, motion sensor 194 can be embodied as a part (as shown in Figure 1) for host apparatus 102, the part of other devices that also can be embodied as infrared imaging module 100 or be connected to host apparatus 102 or contact with host apparatus 102.

Processor 195 can be embodied as any suitable processing unit (such as, logic device, microcontroller, processor, application-specific integrated circuit (ASIC) (ASIC) or other devices), host apparatus 102 can use above-mentioned processing unit to perform suitable instruction, such as, the software instruction in memory 196 is stored in.Display 197 can be used for display capture and/or process after infrared image and/or other images, data and information.Miscellaneous part 198 can be used for any function realizing host apparatus 102, as the various application (such as, clock, temperature sensor, visible light camera or miscellaneous part) that may expect.In addition, machine readable media 193 can be used for storing non-transitory instruction, can will be performed by processor 195 in this non-transitory instruction load to memory 196.

In various embodiments, can produce infrared imaging module 100 and socket 104 in a large number, to promote their extensive use, such as, it can be applicable in mobile phone or other devices (such as, needing the device of little form factor).In one embodiment, when infrared image-forming module 100 is installed in socket 104, the overall dimensions gone out shown by the combination of infrared imaging module 100 and socket 104 is approximately 8.5mm × 8.5mm × 5.9mm.

Fig. 3 shows according to embodiment of the present disclosure, the arranged side by side exploded view being placed in the infrared imaging module 100 on socket 104.Infrared imaging module 100 can comprise lens barrel 110, shell 120, infrared sensor package 128, circuit board 170, pedestal 150 and processing module 160.

Lens barrel 110 can be at least part of loading optical element 180 (such as, lens), the hole 112 in scioptics lens barrel 110, described optical element 180 in figure 3 part visible.Lens barrel 110 can comprise roughly cylindrical prolongation 114, and it can be used for lens barrel 110 is contacted with the hole 122 in shell 120.

Such as, infrared sensor package 128 can be realized by the cap 130 (such as, lid) be arranged on substrate 140.Infrared sensor package 128 can comprise by row or other modes be arranged on the multiple infrared sensors 132 (such as, Infrared Detectors) covered on substrate 140 and by cap 130.Such as, in one embodiment, infrared sensor package 128 can be embodied as focal plane array (FPA).This focal plane array can be embodied as the assembly (such as, being sealed by cap 130 and substrate 140) of such as Vacuum Package.In one embodiment, infrared sensor package 128 can be embodied as wafer-class encapsulation (such as, infrared sensor package 128 can be and be arranged on the monolithic that on wafer, one group of vacuum packaging assembly is separated).In one embodiment, the power supply that infrared sensor package 128 can be embodied as use about 2.4 volts, 2.5 volts, 2.8 volts or similar voltage carrys out work.

Infrared sensor 132 can be configured to the infrared radiation of detection target scene (such as, infrared energy), described target scene comprises: such as medium-wave infrared wave band (MWIR), long wave infrared region (LWIR) and/or as other desired in a particular application thermal imaging wave bands.In one embodiment, infrared sensor package 128 can be provided according to wafer-class encapsulation technology.

Infrared sensor 132 can be embodied as such as micro-metering bolometer, or is configured to the thermal imaging infrared sensor of the other types providing multiple pixel with the array direction pattern of any desired.In one embodiment, infrared sensor 132 can be embodied as vanadium oxide (VOx) detector with 17 micron pixel spacing.In various embodiments, the infrared sensor 132 of the infrared sensor 132 of about 32 × 32 arrays, about 64 × 64 arrays, the infrared sensor 132 of about 80 × 64 arrays or the array of other sizes can be used.

Substrate 140 can comprise various circuit, and comprising such as reading integrated circuit (ROIC), in one embodiment, the size of this reading integrated circuit (ROIC) is less than about 5.5mm × 5.5mm.Substrate 140 also can comprise bond pad 142, and it can be used for when assembling infrared imaging module 100 as shown in Figure 3, contacts with the complementary tie point on the inner surface being placed on shell 120.In one embodiment, the low-dropout regulator (LDO) performing voltage-regulation can be utilized to realize ROIC, to reduce the noise be incorporated in infrared sensor package 128, thus provide the Power Supply Rejection Ratio (PSRR) of improvement.In addition, by realizing having the LDO (such as, in wafer-level packaging) of ROIC, less die area can be consumed and the discrete tube core (or chip) needed is less.

Fig. 4 show according to embodiment of the present disclosure, the block diagram of the infrared sensor package 128 that comprises infrared sensor 132 array.In the embodiment as shown, infrared sensor 132 is as a part for the elementary cell array of ROIC402.ROIC402 comprises bias voltage and produces and timing control circuit 404, column amplifier 405, row multiplexer 406, row multiplexer 408 and output amplifier 410.The picture frame (that is, heat picture) of being caught by infrared sensor 132 by output amplifier 410 is supplied to processing module 160, processor 195 and/or any other suitable parts, to perform various treatment technology described herein.Although shown in Fig. 4 be 8 × 8 array, the array configurations of any expectation all can be used in other execution modes.ROIC and further describing of infrared sensor in U.S. Patent No. disclosed in 22 days February in 2000 6,028, can be found in 309, it can be used as entirety to be herein incorporated by way of reference.

Infrared array sensor 128 can catch image (such as, picture frame), and provides this image with various speed from its ROIC.Processing module 160 can be used for performing suitable process to the infrared image of catching, and can realize this processing module 160 according to any suitable structure.In one embodiment, processing module 160 can be embodied as ASIC.With regard to this respect, this ASIC can be configured to high performance and/or high efficiency carries out image process.In another embodiment, general Central Processing Unit (CPU) can be utilized to realize processing module 160, described CPU can be configured to perform suitable software instruction, to carry out image procossing, adjustment and to carry out image procossing, mutual and/or other operations of working in coordination between processing module 160 and host apparatus 102 by various image processing block.In another embodiment, field programmable gate array (FPGA) can be utilized to realize processing module 160.In other embodiments, as understood by those skilled in the art, the process of other types and/or logical circuit can be utilized to realize processing module 160.

In these and other execution modes, processing module 160 also can realize by the parts suitable with other, such as, volatile memory, nonvolatile memory and/or one or more interface are (such as, infrared detector interface, internal integrated circuit (I2C) interface, mobile Industry Processor Interface (MIPI), JTAG (JTAG) interface (such as, IEEE1149.1 standard test access port and boundary-scan architecture) and/or other interfaces).

In some embodiments, infrared imaging module 100 can comprise one or more actuator 199 further, and it can be used for the focus adjusting the infrared image frame that infrared sensor package 128 is caught.Such as, the miscellaneous part that actuator 199 can be used for mobile optical element 180, infrared sensor 132 and/or is relative to each other, optionally to focus on according to technology described herein and to defocus infrared image frame.Actuator 199 can be realized according to the motional induction equipment of any type or device, and actuator 199 can be placed on the inner or outside any position of infrared imaging module 100, to adapt to different application.

After infrared imaging module 100 being assembled, infrared sensor package 128, pedestal 150 and processing module 160 can seal by shell 120 subsequently completely.Shell 120 can be convenient to the connection of the various parts of infrared imaging module 100.Such as, in one embodiment, shell 120 can be provided for the electric connecting part 126 connecting various parts, will be described in greater detail below.

When infrared imaging module 100 being assembled, electric connecting part 126 (such as, the electric connecting part of conductive path, electrical trace or other types) can be electrically connected with bond pad 142.In various embodiments, can electric connecting part 126 be embedded in shell 120, be arranged on the inner surface of shell 120 and/or by shell 120 described electric connecting part 126 is provided.As shown in Figure 3, electric connecting part 126 can end in the link 124 of the basal surface protruding from shell 120.When infrared imaging module 100 being assembled, link 124 can be connected with circuit board 170 (such as, in various embodiments, shell 120 can be placed in circuit board 170 top).Processing module 160 is electrically connected with circuit board 170 by suitable electric connecting part.Therefore, infrared sensor package 128 can be such as electrically connected with processing module 160 by conductive path, and described conductive path can be provided by the electric connecting part 126 of the complementary tie point in bond pad 142, shell 120 interior surface, shell 120, link 124 and circuit board 170.Advantageously, the realization of this layout can without the need to arranging bonding wire between infrared sensor package 128 and processing module 160.

In various embodiments, the material of any expectation (such as, copper or any other suitable electric conducting material) can be used to manufacture electric connecting part 126 in shell 120.In one embodiment, the heat that electric connecting part 126 can contribute to infrared imaging module 100 produces dispels the heat.

Other connections can be used in other execution modes.Such as, in one embodiment, sensor cluster 128 is connected to processing module 160 by ceramic wafer, and described ceramic wafer is connected to sensor cluster 128 by bonding wire and is connected to processing module 160 by ball grid array (BGA).In another embodiment, sensor cluster 128 directly can be installed on hard and soft plate and to be electrically connected with bonding wire, and bonding wire or BGA can be utilized processing module 160 to be installed and are connected to hard and soft plate.

The various application of infrared imaging module 100 described in this paper and host apparatus 102 are just in order to illustrate, instead of restriction.With regard to this respect, any one in various technology described herein all may be used on any IR camera system, infrared imaging device or other devices for carrying out infrared/thermal imaging.

The substrate 140 of infrared sensor package 128 can be installed on pedestal 150.In various embodiments, pedestal 150 (such as, base) such as by the copper production formed by metal injection moulding (MIM), and can carry out black oxidation process or nickel coating process to described pedestal 150.In various embodiments, pedestal 150 can by the material manufacture of any expectation, such as, can according to application-specific, by such as zinc, aluminium or magnesium manufacture, and, pedestal 150 is formed by the application flow of any expectation, such as, according to application-specific, such as, can be formed by the quick cast of aluminium casting, MIM or zinc.In various embodiments, pedestal 150 can be used for providing support structure, various circuit paths, heat radiator performance and other suitable functions.In one embodiment, pedestal 150 can be the sandwich construction using ceramic material to realize at least partly.

In various embodiments, circuit board 170 can hold shell 120, thus can support the various parts of infrared imaging module 100 physically.In various embodiments, circuit board 170 can be embodied as printed circuit board (PCB) (such as, the circuit board of FR4 circuit board or other types), the interconnect equipment (such as, the interconnect equipment of interconnection belt or other types) of rigidity or flexibility, flexible circuit board, flexible plastic substrates or other suitable structures.In various embodiments, pedestal 150 can be embodied as various function and the attribute of the circuit board 170 with description, and vice versa.

Socket 104 can comprise the cavity 106 being configured to hold infrared imaging module 100 (view such as, after assembling as shown in Figure 2).Infrared imaging module 100 and/or socket 104 can comprise suitable card, arm, pin, securing member or any other suitable attachment, described attachment can be used for, by friction, tension force, adhesion and/or any other suitable mode, infrared imaging module 100 is fixed to socket 104, or it is inner infrared imaging module 100 to be fixed to socket 104.Socket 104 can comprise attachment 107, and it can when being inserted in the cavity 106 of socket 104 when infrared image-forming module 100, the surface 109 of splice closure 120.The attachment of other types can be used in other execution modes.

Infrared imaging module 100 is electrically connected with socket 104 by suitable electric connecting part (such as, contact, pin, electric wire or any other suitable link).Such as, socket 104 can comprise electric connecting part 108, it can contact to the corresponding electric connecting part of infrared imaging module 100 (such as, interconnect pad, contact or other electric connecting parts on circuit board 170 side or basal surface, engage other electric connecting parts on keyboard 142 or pedestal 150 or other links).Electric connecting part 108 can be manufactured by the material of any expectation (such as, copper or any other suitable electric conducting material).In one embodiment, electric connecting part 108 can by the flattening of machinery, can against the electric connecting part of infrared imaging module 100 when infrared image-forming module 100 is inserted in the cavity 106 of socket 104.In one embodiment, what electric connecting part 108 can be at least part of is fixed to infrared imaging module 100 in socket 104.The electric connecting part of other types can be used in other execution modes.

Socket 104 is electrically connected with main frame 102 by the electric connecting part of similar type.Such as, in one embodiment, main frame 102 can comprise the electric connecting part (such as, be welded to connect, buckle type connects or other connect) be connected with electric connecting part 108 through hole 190.In various embodiments, this electric connecting part can be placed in side and/or the bottom of socket 104.

Realize the various parts of infrared imaging module 100 by flip chip technology (fct), described flip chip technology (fct) can be used for parts to be directly installed on circuit board, and without the need to being generally used for the extra gap that bonding wire connects.Flip-chip connects the overall dimensions being such as used in and reducing infrared imaging module 100 in compact little form factor application.Such as, in one embodiment, can use flip-chip link that processing module 160 is installed to circuit board 170.Such as, this flip-chip arrangement can be used to realize infrared imaging module 100.

In various embodiments, can be 12/844 according to such as application number, 124, the applying date is the U.S. Patent application on July 27th, 2010 and application number is 61/469,651, the various technology of the applying date described in the U.S. Provisional Patent Application on March 30th, 2011 (such as, justifying brilliant level encapsulation technology), realize infrared imaging module 100 and/or relevant parts, it can be used as entirety to be herein incorporated by way of reference.In addition, according to one or more execution mode, the various technology can recorded according to document as described below realize, correct, test and/or the parts using infrared imaging module 100 and/or be correlated with, described document is such as: if publication number is 7, 470, 902, publication date is the United States Patent (USP) on December 30th, 2008, publication number is 6, 028, 309, publication date is the United States Patent (USP) on February 22nd, 2000, publication number is 6, 812, 465, publication date is the United States Patent (USP) on November 2nd, 2004, publication number is 7, 034, 301, publication date is the United States Patent (USP) on April 25th, 2006, publication number is 7, 679, 048, publication date is the United States Patent (USP) on March 16th, 2010, publication number is 7, 470, 904, publication date is the United States Patent (USP) on December 30th, 2008, application number is 12/202, 880, the applying date is the U.S. Patent application on September 2nd, 2008 and application number is 12/202, 896, the applying date is the U.S. Patent application on September 2nd, 2008, by way of reference above-mentioned document is herein incorporated as a whole.

In some embodiments, host apparatus 102 can comprise miscellaneous part 198, such as non-thermal camera (such as, the non-thermographic instrument of visible light camera or other types).Non-thermal camera can be little form factor image-forming module or imaging device, and in some embodiments, non-thermal camera can be similar to each execution mode of infrared imaging module 100 disclosed herein mode implement, wherein one or more transducers and/or sensor array respond the radiation (such as, the radiation of visible wavelength, ultraviolet wavelength and/or other non-thermal wavelengths) in nonthermal spectrum.Such as, in some embodiments, non-thermal camera can implement charge coupled device (CCD) transducer, electron multiplication CCD (EMCCD) transducer, complementary metal oxide semiconductors (CMOS) (CMOS) transducer, Scientific Grade CMOS (sCMOS) transducer or other filters and/or transducer.

In some embodiments, non-thermal camera can be positioned at same position with infrared imaging module 100 and be oriented so that the FOV of at least part of overlapping infrared imaging module 100 in the visual field (FOV) of non-thermal camera.In an example, infrared imaging module 100 and non-thermal camera may be embodied to the dual sensor module sharing public substrate, it is according to the U.S. Provisional Patent Application No.61/748 submitted on December 31st, 2012, the various technology described in 018, and this application is incorporated to herein by quoting.

For the execution mode with non-thermal photocamera, various parts (such as, processor 195, processing module 160 and/or other processing unit) infrared image that can be configured to infrared imaging module 100 is caught is (such as, comprise heat picture) and the non-thermal camera non-thermographic of catching is (such as, comprise visible images) superpose, merge, mix or otherwise synthesize, no matter substantially catch simultaneously or asynchronously catch (such as, the time is separated by a few hours, a couple of days, daytime: evening and/or other).

In some embodiments, heat and non-thermographic can be processed into and produce composograph (the one or more process such as, in some embodiments, this image carried out).Such as, the NUC process (hereafter further describing) based on scene can be performed, true color process can be performed, and/or high contrast process can be performed.

About true color process, can by such as heat picture being mixed with non-thermographic by the mixing of the respective components of the radial component of heat picture and non-thermographic according to hybrid parameter, in some embodiments, hybrid parameter can by user and/or machine adjustments.Such as, brightness or the chromatic component of heat picture and non-thermographic can be synthesized according to hybrid parameter.In one embodiment, this hybrid technology can be called as true color infrared image.Such as, by day during imaging, vision-mix can comprise non-thermal coloured image, and it comprises luminance component and chromatic component, and wherein its brightness value is substituted by the brightness value of heat picture and/or mixes with the brightness value from heat picture.Use from the brightness data of heat picture makes the shading value of genuine non-thermal coloured image brighten based on the temperature of object or dimmed.Therefore, these hybrid technologies provide the thermal imaging for daytime or visible images.

About height contrast process, high spatial frequency content can by the one or more acquisitions (such as, by performing high-pass filtering, Difference Imaging and/or other technologies) in heat and non-thermographic.Composograph can comprise heat picture radial component and comprise scene infrared (such as, heat) mixed components of characteristic, the infrared characteristic of scene mixes with high spatial frequency content according to hybrid parameter, and in some embodiments, hybrid parameter can by user and/or machine adjustments.In some embodiments, high spatial frequency content from non-thermographic can mix with heat picture by being superimposed upon on heat picture by high spatial frequency content, and its high spatial frequencies content substitutes or rewrite those parts corresponding with high spatial frequency content location of heat picture.Such as, high spatial frequency content can comprise the object edge be depicted in scene image, but can not be present in the inside of these objects.In this Shao-execution mode, vision-mix can only include high spatial frequency content, and it can be encoded into one or more components of composograph subsequently.

Such as, the radial component of heat picture can be the chromatic component of heat picture, and high spatial frequency content can derive from brightness and/or the chromatic component of non-thermographic.In this embodiment, composograph can comprise radial component (such as, the chromatic component of heat picture) and high spatial frequency content, radial component is encoded into the chromatic component of composograph, high spatial frequency content direct coding (such as, vision-mix does not still have heat picture to contribute) is to the luminance component of composograph.So, the radiometric calibration of the radial component of heat picture can be kept.In similar embodiments, blended image data can comprise the high spatial frequency content of the luminance component of the vision-mix of adding generation to and the generated data of generation, and it is encoded to the luminance component of the composograph of generation.

Such as, below any technology disclosed in application may be used to various execution mode: the U.S. Patent application No.12/477 that on June 3rd, 2009 submits to, 828, the U.S. Patent application No.12/766 that on April 23rd, 2010 submits to, 739, the U.S. Patent application No.13/105 that on May 11st, 2011 submits to, 765, the U.S. Patent application No.13/437 that on April 2nd, 2012 submits to, 645, the U.S. Provisional Patent Application No.61/473 that on April 8th, 2011 submits to, 207, the U.S. Provisional Patent Application No.61/746 that on December 26th, 2012 submits to, 069, the U.S. Provisional Patent Application No.61/746 that on December 26th, 2012 submits to, 074, the U.S. Provisional Patent Application No.61/748 that on December 31st, 2012 submits to, 018, the U.S. Provisional Patent Application No.61/792 that on March 15th, 2013 submits to, 582, the U.S. Provisional Patent Application No.61/793 that on March 15th, 2013 submits to, the U.S. Patent application No.PCT/EP2011/056432 that on April 21st, 952 and 2011 submits to, all these applications are overall to be incorporated to herein by quoting.Described herein or describe in other applications or any technology of describing in the patent that relates to herein can be applied to and anyly describe various thermal, non-thermal and purposes herein.

Refer again to Fig. 1, in various embodiments, host apparatus 102 can comprise shutter 105.With regard to this respect, when infrared imaging module 100 is arranged in socket, shutter 105 optionally can be placed on (such as, direction as determined in arrow 103) on socket 104.With regard to this respect, shutter 105 is such as used in when infrared imaging module 100 does not use and protects it.Shutter 105 also can be used as temperature reference, as those skilled in the art be to be understood that, described temperature reference is as a part for the trimming process (such as, Nonuniformity Correction (NUC) process or other trimming processes) of infrared imaging module 100.

In various embodiments, shutter 105 can be manufactured by various material, such as, and polymer, glass, aluminium (such as, japanning or after anodized) or other materials.In various embodiments, shutter 105 can comprise one or more coating (such as, uniform black matrix coating or reflexive gold coatings), and it is for the various optical properties of optionally filter electromagnetic radiation and/or adjustment shutter 105.

In another embodiment, shutter 105 can be fixed on appropriate location with round-the-clock protection infrared imaging module 100.In this case, the part of shutter 105 or shutter 105 can by substantially can not filter out needs Infrared wavelength suitable material (such as, polymer, or the infrared transmission material of such as silicon, germanium, zinc selenide or chalcogenide glass) manufacture.As those skilled in the art be to be understood that, in another embodiment, shutter can be embodied as a part for infrared imaging module 100 (such as, in the miscellaneous part of lens barrel or infrared imaging module 100, or as the part of the miscellaneous part of lens barrel or infrared imaging module 100).

Optionally, in another embodiment, without the need to providing shutter (such as, the outside of shutter 105 or other types or inner shutter), but the technology without shutter can be used to carry out the correction of NUC step or other types.In another embodiment, use and can carry out with the combine with technique based on shutter without the NUC step of fast gate technique or the correction of other types.

Any one in the various technology can recorded according to following document realizes infrared imaging module 100 and host apparatus 102, and described document is: application number is 61/495,873, and the applying date is the U.S. Provisional Patent Application on June 10th, 2011; Application number is 61/495,879, and the applying date is the U.S. Provisional Patent Application on June 10th, 2011; And application number is 61/495,888, the applying date is the U.S. Provisional Patent Application on June 10th, 2011.By way of reference above-mentioned document is herein incorporated as a whole.

In various embodiments, the parts of host apparatus 102 and/or infrared imaging module 100 can be embodied as local system, or are embodied as between parts and carry out by wired and/or wireless network the distributed system that communicates.Therefore, according to the needs of particular implementation, the various operations mentioned by the disclosure can be performed by local and/or remote units.

Fig. 5 show according to disclosure execution mode, the flow chart of the various operations of determining NUC item.In some embodiments, the processing module 160 that can be processed by the picture frame of catching infrared sensor 132 or processor 195 (the two usually also finger processor) perform the operation of Fig. 5.

At block 505, infrared sensor 132 starts the picture frame of capturing scenes.Usually, scene will be the current true environment be in of host apparatus 102.With regard to this respect, shutter 105 (if optionally providing) can be opened to allow infrared imaging module to receive infrared radiation from scene.During all operations shown in Fig. 5, infrared sensor 132 catches picture frame serially.With regard to this respect, catch picture frame continuously and can be used for various operation as further discussed.In one embodiment, time-domain filtering can be carried out (such as to the picture frame of catching, step according to block 826 carries out time-domain filtering to the picture frame of catching, to be described further according to Fig. 8 herein), and before described picture frame is used to the operation shown in Fig. 5, by other (such as, factory's gain term 812, factory's shift term 816, the NUC item 817 previously determined, row FPN item 820 and row FPN item 824, will be described further it according to Fig. 8 herein) they are processed.

At block 510, the startup event of NUC step detected.In one embodiment, NUC step can start in response to the physics of host apparatus 102 moves.Such as, this movement can be detected by by the motion sensor 194 of processor poll.In one example in which, for mobile host device 102 may be carried out in a particular manner, such as, by the host apparatus 102 that moves around of having a mind to, host apparatus 102 is made to do " elimination " or " bang " motion.With regard to this respect, user can according to predetermined speed and direction (speed), such as, is carried out mobile host device 102 by the motion of upper and lower, left and right or other types thus started NUC step.In this example, the use of this movement can allow user's operating host device 102 intuitively, to simulate the noise " elimination " to the picture frame of catching.

In another example, if detect that motion exceedes threshold value (such as, motion has exceeded the normal use expected), then can start NUC step by host apparatus 102.Can be expected that, the spatial displacement of the type of any expectation of host apparatus 102 all can be used for starting NUC step.

In another example, if since the NUC step previously performed, pass by minimum time, then can start NUC step by host apparatus 102.In another example, if since the NUC step previously performed, infrared imaging module 100 experienced by minimum temperature change, then can start NUC step by host apparatus 102.In other example, start serially and repeat NUC step.

At block 515, after NUC step startup event being detected, determine whether perform NUC step veritably.With regard to this respect, whether can meet based on one or more additional conditions, optionally start NUC step.Such as, in one embodiment, unless since the NUC step previously performed, pass by minimum time, otherwise NUC step can not have been performed.In another embodiment, unless since the NUC step previously performed, infrared imaging module 100 experienced by minimum variations in temperature, otherwise can not perform NUC step.Other standards or condition can be used in other execution modes.If met suitable standard or condition, flow chart will proceed to block 520.Otherwise flow chart turns back to block 505.

In NUC step, ambiguity diagram picture frame can be used for determining NUC item, and the picture frame that described NUC item can be applicable to catch is to correct FPN.As discussed, in one embodiment, the multiple picture frames (picture frame of such as, catching when scene and/or thermal imaging system are in the state of motion) by cumulative moving scene obtain ambiguity diagram picture frame.In another embodiment, defocus by the optical element or miscellaneous part making thermal imaging system, obtain ambiguity diagram picture frame.

Therefore, block 520 provides the selection of two kinds of methods.If use based drive method, then flow chart proceeds to block 525.If used based on the method defocused, then flow chart proceeds to block 530.

With reference now to based drive method, at block 525, motion detected.Such as, in one embodiment, the picture frame can caught based on infrared sensor 132 detects motion.With regard to this respect, suitable motion detection step (such as, image registration step, frame are to the mathematic interpolation of frame or other suitable steps) can be applicable to the picture frame of catching, to determine whether there is motion (such as, whether having captured picture frame that is static or motion).Such as, in one embodiment, can determine that the quantity that the pixel of the surrounding of the pixel of successive image frame or region change has exceeded user-defined quantity (such as, percentage and/or threshold value).If the pixel of at least given percentage has changed and the quantity of the pixel changed is at least user-defined quantity, then that can affirm very much has detected motion, thus flow chart forwards block 535 to.

In another embodiment, can determine motion on the basis of each pixel, wherein, only cumulative those demonstrate the pixel of significant change, to provide ambiguity diagram picture frame.Such as, can arrange counter for each pixel, described counter is identical for ensureing the quantity of the pixel value that each pixel adds up, or is averaged pixel value for the quantity of the pixel value in fact added up according to each pixel.The motion detection based on image of other types can be performed, such as, perform and draw east (Radon) to convert.

In another embodiment, the data that can provide based on motion sensor 194 detect motion.In one embodiment, this motion detection can comprise detect host apparatus 102 whether move along relative to straight track in space.Such as, if host apparatus 102 just moves along relative to straight track, so following situation is possible: occur that some object in scene after imaging may fuzzy not (object such as, in scene be aimed at straight track or substantially moved along the direction being parallel to described straight track).Therefore, in this embodiment, when only having host apparatus 102 demonstrate motion or do not demonstrate motion but move along particular track, motion sensor 194 just can detect motion.

In another embodiment, both motion detection step and motion sensor 194 can be used.Therefore, use any one in these various execution modes, can determine scene at least partially and host apparatus 102 relative to each other between motion while (such as, this can be moved relative to scene by host apparatus 102, scene move relative to host apparatus 102 at least partially or above-mentioned two situations cause), whether capture each picture frame.

Can be expected that, detect the picture frame of motion can demonstrate some of the scene of catching secondary fuzzy (such as, the fuzzy thermographic image data relevant to scene), described secondary fuzzy be cause alternately because thermal time constant (such as, micro-radiant heat time constant) and the scene of infrared sensor 132 moves.

At block 535, to detecting that the picture frame of motion adds up.Such as, if the motion of continuous print a series of images frame detected, then can add up to series of drawing picture frame.As another one example, if the motion of some picture frame only detected, then can neglect and not have the picture frame moved not add up to the picture frame that these do not move.Therefore, can, based on the motion detected, continuous print or discontinuous a series of images frame be selected to add up.

At block 540, be averaged to provide ambiguity diagram picture frame to cumulative picture frame.Because cumulative picture frame during movement captures, so scene information actual between our desired image frame will be different, thus cause fuzzy after picture frame in scene information by further fuzzy (block 545).

In contrast, during movement, within least short time and at least limited change of scene radiation time, FPN (such as, being caused by one or more parts of infrared imaging module 100) remains unchanged.As a result, picture frame close on the Time and place during movement captured will suffer identical or at least similar FPN.Therefore, although the scene information in successive image frame may change, FPN will keep substantially constant.By being averaged to the multiple picture frames captured between moving period, described multiple picture frame will fuzzy scene information, but can not fuzzy FPN.As a result, compared with scene information, FPN keeps in the ambiguity diagram picture frame provided at block 545 clearly.

In one embodiment, in block 535 and 540, cumulative sum carried out to 32 or more picture frames average.But the picture frame of any desired amt is all in other embodiments available, just along with the minimizing of the quantity of frame, correction accuracy can reduce usually.

With reference now to based on the method defocused, at block 530, carry out defocusing operations and defocus with the picture frame making infrared sensor 132 wittingly and catch.Such as, in one embodiment, one or more actuator 199 can be used for adjusting, the miscellaneous part of mobile or translation optical element 180, infrared sensor package 128 and/or infrared imaging module 100, to make fuzzy (such as, not focusing on) picture frame of infrared sensor 132 capturing scenes.Also can consider to use other not make infrared image frame defocus wittingly based on the technology of actuator, such as, as artificial (such as, user starts) defocuses.

Although the scene in picture frame may occur fuzzy, by defocusing operations, FPN (such as, being caused by one or more parts of infrared imaging module 100) will remain unaffected.As a result, the ambiguity diagram picture frame of scene (block 545) will have FPN, and compared with scene information, described FPN keeps in described blurred picture clearly.

In superincumbent discussion, what described is relevant with single picture frame of catching based on the method defocused.In another embodiment, can comprise based on the method defocused and when infrared image-forming module 100 is defocused, multiple picture frame being added up, and the picture frame defocused is averaged to eliminate the impact of noise in time domain and provides ambiguity diagram picture frame at block 545.

Therefore, be understandable that, both by based drive method also by providing fuzzy picture frame based on the method defocused at block 545.Because motion, to defocus or said two devices all can make a lot of scene informations fuzzy, so in fact ambiguity diagram picture frame can be thought the low-pass filtering version of the picture frame of original relevant scene information of catching.

At block 505, the FPN item of the row and column determining to upgrade is processed (such as to ambiguity diagram picture frame, if do not determine the FPN item of row and column before, the FPN item of the row and column so upgraded can be block 550 first time the new row and column in iteration FPN item).As the disclosure use, according to the direction of the miscellaneous part of infrared sensor 132 and/or infrared imaging module 100, the interchangeable use of term row and column.

In one embodiment, block 550 comprises determines that often row ambiguity diagram picture frame (such as, often row ambiguity diagram picture frame can have the space FPN correction term of himself) space FPN correction term, and also determine the space FPN correction term of often row ambiguity diagram picture frame (such as, often row ambiguity diagram picture frame can have the space FPN correction term of himself).This process can be used for reducing space and the slow change (1/f) reducing the intrinsic row and column FPN of thermal imaging system, this slow change case is caused by the 1/f noise feature of the amplifier in ROIC402 in this way, and described 1/f noise feature can show as the vertical and horizontal bar in picture frame.

Advantageously, by the FPN utilizing ambiguity diagram picture frame to determine space row and column, can reduce and the vertical and horizontal in the scene of actual imaging be thought by mistake be the risk (such as, real scene content is fuzzy, and FPN maintenance is not fuzzy) of row and column noise.

In one embodiment, by consider ambiguity diagram picture frame neighbor between difference determine row and column FPN item.Such as, Fig. 6 show according to disclosure execution mode, difference between neighbor.Particularly, in figure 6, pixel 610 and 8 horizontal adjacent pixels near it are compared: d0-d3 is in side, and d4-d7 is at opposite side.Difference between neighbor can be averaged, to obtain the estimated value of the offset error of the pixel groups illustrated.All can calculate the offset error of each pixel in row or row, and the mean value obtained can be used for correcting whole row or row.

In order to prevent that real contextual data is interpreted as noise, can SC service ceiling threshold value and lower threshold (thPix and-thPix).The pixel value (in this example embodiment, being pixel d1 and d4) fallen into outside this threshold range is not used in acquisition offset error.In addition, these threshold values can limit the maximum that row and column FPN corrects.

Application number is 12/396,340, and the applying date is that the U.S. Patent application on March 2nd, 2009 describes the technology more specifically performing space row and column FPN correction process, it can be used as entirety to be herein incorporated by way of reference.

Refer again to Fig. 5, the row and column FPN item of the renewal determined at block 550 is carried out storing (block 552) and is applied to the ambiguity diagram picture frame that (block 555) block 545 provides.After applying these, the FPN of some the space row and columns in ambiguity diagram picture frame can be reduced.Such as, but because these are applied to row and column usually, so additional FPN can keep, skew or the other reasons of space-independent FPN and pixel to pixel are relevant.With single row and column may not be directly related, the neighborhood of the FPN of space correlation also can remain unchanged.Therefore, can be further processed to determine NUC item, will be described below.

At block 560, determine local contrast value in ambiguity diagram picture frame (the gradient edge value such as, between neighbor or small group of pixels or absolute value).If the scene information in ambiguity diagram picture frame comprises also not by obviously fuzzy contrast region (such as, the high-contrast edge in Raw scene data), so these features can be identified by the contrast determining step of block 560.

Such as, the local contrast value in ambiguity diagram picture frame can be calculated, or the edge detecting step of any other type can be applicable to identify as local contrast region a part, some pixel in blurred picture.Can think that the pixel marked by this way comprises the scene information of very high spatial frequency, the scene information of this very high spatial frequency can be interpreted as FPN (such as, this region may correspond in also not by the part of fully fuzzy scene).Therefore, these pixels can be got rid of outside the process being used for determining further NUC item.In one embodiment, this contrast check processing can be dependent on higher than the expectation contrast value relevant to FPN threshold value (such as, can think that the contrast value that demonstrates is scene information higher than the pixel of threshold value, and think that those pixels lower than threshold value are display FPN).

In one embodiment, after row and column FPN item has been applied to ambiguity diagram picture frame, can determine (such as, as shown in Figure 5) the contrast of ambiguity diagram picture frame execution block 560.In another embodiment, can before block 550 execution block 560, to determine contrast (such as, to prevent contrast based on scene for determining that this has impact) before determining row and column FPN item.

After block 560, can be expected that, any high spatial frequency component remained in ambiguity diagram picture frame can be general owing to space-independent FPN.With regard to this respect, after block 560, other noises a lot of or the real information based on scene needed are removed or got rid of outside ambiguity diagram picture frame, this is because: to fuzzy wittingly (such as, by from the motion of block 520 to 545 or defocus) of picture frame, the application (block 555) of row and column FPN item and the determination (block 560) of contrast.

Therefore, it is expected to, after block 560, any residual high spatial frequency component (such as, being shown as the contrast in ambiguity diagram picture frame or distinct regions) is all attributable to space-independent FPN.Therefore, at block 565, high-pass filtering is carried out to ambiguity diagram picture frame.In one embodiment, this can comprise application high pass filter to extract high spatial frequency component from ambiguity diagram picture frame.In another embodiment, this can comprise ambiguity diagram picture frame application of low-pass filters, and the difference extracted between the picture frame after low-pass filtering and the picture frame not having filtering is to obtain high spatial frequency component.According to various execution mode of the present disclosure, realize high pass filter by the mean difference between calculating sensor signal (such as, pixel value) and its adjacent signals.

At block 570, flat field correction process is carried out to the ambiguity diagram picture frame after high-pass filtering, to determine the NUC item (such as, if previously do not carry out NUC step, the NUC item so upgraded can be the new NUC item of first time in iteration of block 570) upgraded.

Such as, Fig. 7 shows the flat field correction technology 700 according to disclosure execution mode.In the figure 7, the NUC item by using the value of neighbor 712 to 726 of pixel 710 to determine each pixel 710 of ambiguity diagram picture frame.For each pixel 710, several gradient can be determined based on the absolute difference between the value of various neighbor.Such as, the absolute difference between following pixel can be determined: between pixel 712 and 714 between (diagonal angle gradient from left to right), pixel 716 and 718 between (vertical gradient from top to bottom), pixel 720 and 722 between (diagonal angle gradient from right to left) and pixel 724 and 726 (horizontal gradient from left to right).

Can sue for peace to these absolute differences, to provide the summation gradient of pixel 710.Can determine the weighted value of pixel 710, described weighted value is inversely proportional to summation gradient.This step can be performed, until provide weighted value for each pixel 710 to whole pixels 710 of ambiguity diagram picture frame.For the region (such as, by fuzzy region or the region with low contrast) with low gradient, weighted value will close to 1.On the contrary, for the region with high gradient, weighted value will be 0 or close to 0.Updated value as the NUC item estimated by high pass filter is multiplied with weighted value.

In one embodiment, by a certain amount of time decay is applied to NUC item determining step, risk scene information being incorporated into NUC item can be reduced further.Such as, can select the time decay factor λ between 0 and 1, the new NUC item (NUCNEW) stored like this is the average weighted value of the NUC item (NUCUPDATE) of the renewal of old NUC item (NUCOLD) and estimation.In one embodiment, this can be expressed as: NUCNEW=λ NUCOLD+ (1-λ) (NUCOLD+NUCUPDATE).

Determine NUC item although described according to gradient, local contrast value time suitable, also can be used to replace gradient.Also other technologies can be used, such as, standard deviation calculation.The flat field correction step that can perform other types, to determine NUC item, comprising: such as publication number is 6,028,309, and publication date is the United States Patent (USP) on February 22nd, 2000; Publication number is 6,812,465, and publication date is the United States Patent (USP) on November 2nd, 2004; And application number is 12/114,865, the various steps of the applying date described in the U.S. Patent application on May 5th, 2008.By way of reference above-mentioned document is herein incorporated as a whole.

Refer again to Fig. 5, block 570 can comprise the additional treatments to NUC item.Such as, in one embodiment, in order to retain the mean value of scene signals, by the mean value that deducts NUC item from each NUC item by whole NUC item and normalize to 0.Same at block 570, in order to avoid row and column noise effect NUC item, the mean value of every row and column can be deducted from the NUC item of every row and column.Result is, the row and column FPN filter being used in the row and column FPN item that block 550 is determined after can filtering out better and NUC item being applied to the image of catching (such as, in the step that block 580 carries out, to be further described this herein) further iteration in the row and column noise of (such as, as Fig. 8 be shown specifically).With regard to this respect, row and column FPN filter can use more data to calculate often row the and often offset coefficient that arranges is (such as usually, the FPN item of row and column), and with carry out the NUC item of incoherent noise on capture space based on high pass filter compared with, can thus provide more reliably, for reducing the option of the FPN of space correlation.

At block 571-573, can perform additional high-pass filtering to the NUC item upgraded alternatively and further determine that process is with the FPN eliminating space correlation, the FPN of described space correlation has the spatial frequency lower than the previous spatial frequency eliminated by row and column FPN item.With regard to this respect, some changes of the miscellaneous part of infrared sensor 132 or infrared imaging module 100 can produce the FPN noise of space correlation, can not easily by the FPN noise modeling of produced space correlation for row or row noise.The FPN of this space correlation can comprise the transmitted fluorescence on such as sensor cluster or infrared sensor 132 groups, and described infrared sensor 132 groups is compared with adjacent infrared sensor 132, and it responds different radiancy.In one embodiment, offset correction can be used to reduce the FPN of this space correlation.If the quantity of the FPN of this space correlation is a lot, then also noise can be detected in ambiguity diagram picture frame.Because such noise can affect neighbor, the high pass filter with very little kernel may not detect that FPN in neighbor (such as, whole values that high pass filter uses can from affected pixel near pixel extract, thus described whole value can by same offset errors effect).Such as, if use the high-pass filtering of little kernel execution block 565 (such as, only consider the pixel of the direct neighbor of the environs of the pixel falling into the FPN impact being subject to space correlation), then the FPN of the space correlation of extensively distribution may not be detected.

Such as, Figure 11 shows the FPN according to the space correlation in disclosure execution mode, neighbouring pixel.As shown in the picture frame 1100 of sampling, pixel near pixel 1110 can show the FPN of space correlation, inaccurate and the single row and column of FPN of described space correlation is relevant, and be distributed in neighbouring multiple pixels (such as, in this example embodiment, neighbouring pixel is about the pixel of 4 × 4).The picture frame 1100 of sampling also comprises one group of pixel 1120 and one group of pixel 1130, and described pixel 1120 shows does not have substantially responding uniformly of use in filtering calculates, and described pixel 1130 is for estimating the low-pass value of the pixel near pixel 1110.In one embodiment, pixel 1130 can be can be divided into multiple pixels of 2, so that effective calculating of hardware or software.

Refer again to Fig. 5, at block 571-573, can optionally perform additional high-pass filtering to the NUC item upgraded and further determine process, to eliminate the FPN of space correlation, such as, the FPN of the space correlation that pixel 1110 shows.At block 571, the NUC item of the renewal determined at block 570 is applied to ambiguity diagram picture frame.Therefore, now, ambiguity diagram picture frame will for the FPN (such as, by applying the row and column FPN item upgraded at block 555) of preliminary corrections space correlation, and also for the space-independent FPN of preliminary corrections (such as, by applying the NUC item upgraded at block 571).

At block 572, further apply high pass filter, the core of this high pass filter is larger than the core of the high pass filter used in block 565, and can determine the NUC item of renewal further at block 573.Such as, in order to detect the FPN of the space correlation existed in pixel 1110, the data of the enough large adjacent area from pixel can be comprised at the high pass filter of block 572 application, thus can determine there is no affected pixel (such as, pixel 1120) and affected pixel (such as, pixel 1110) between difference.Such as, the low pass filter (such as, the N × N kernel much larger than 3 × 3 pixels) with macronucleus can be used, and the result that obtains can be deducted to carry out suitable high-pass filtering.

In one embodiment, in order to improve computational efficiency, sparse kernel can be used, thus only use the neighbor of the lesser amt in N × N near zone.For high pass filter operation (such as, there is the high pass filter of macronucleus) of any given use neighbor far away, there is the risk (may be fuzzy) scene information of reality being modeled as the FPN of space correlation.Therefore, in one embodiment, the time decay factor λ of the NUC item being used for the renewal determined at block 573 can be set to close to 1.

In various embodiments, can repeatable block 571-573 (such as, cascade), high-pass filtering is performed iteratively to utilize the core size increased progressively, thus the NUC item upgraded further is provided, the NUC item of described further renewal is used for the FPN of the space correlation correcting the adjacent size area needed further.In one embodiment, the NUC item of the renewal that can obtain according to the prior operation by block 571-573, whether by elimination real for the FPN of space correlation, determines the decision performing this iteration.

After block 571-573 completes, make the decision (block 574) whether the NUC item of renewal being applied to the picture frame of catching.Such as, if the mean value of the absolute value of the NUC item of whole picture frame is less than minimum threshold value, or be greater than maximum threshold value, then can think that this NUC item is false or can not provides significant correction.Optionally, threshold criteria can be applied to each pixel, to determine which pixel-by-pixel basis receives the NUC item of renewal.In one embodiment, threshold value may correspond to the difference between the NUC item and the NUC item previously calculated of new calculating.In another embodiment, threshold value can independent of the NUC item previously calculated.Other tests (such as, spatial coherence test) can be applied to determine whether to apply this NUC item.

If think that NUC item is false or can not provides significant correction, then flow chart turns back to block 505.Otherwise, store the up-to-date NUC item (block 575) determined to substitute previous NUC item (such as, being determined by the iteration previously performed in Fig. 5), and the described up-to-date NUC item determined be applied to the picture frame that (block 580) catch.

Fig. 8 show according to disclosure execution mode, the various image processing techniques of the Fig. 5 be applied in image processing pipeline 800 and other operations.With regard to this respect, streamline 800 identifies when the processing scheme of the whole iterative images for correcting the picture frame that infrared imaging module 100 provides, the various operations of Fig. 5.In some embodiments, streamline 800 can be provided by the processing module 160 operated the picture frame of being caught by infrared sensor 132 or processor 195 (the two usually also finger processor).

The picture frame that infrared sensor 132 is caught can be supplied to frame averager 804, described frame averager 804 asks the integration of multiple picture frame to provide the picture frame 802 of the signal to noise ratio with improvement.By infrared sensor 132, ROIC402 and be embodied as and support that other assemblies that hi-vision catches the infrared sensor package 128 of speed provide frame averager 804 effectively.Such as, in one embodiment, infrared sensor package 128 can catch infrared image frame with the frame rate of 240Hz (such as, per second catch 240 width images).In this embodiment, such as by making infrared sensor package 128 be operated in relatively low voltage (such as, compatible mutually with the voltage of mobile phone), and by using relatively little infrared sensor 132 array (such as, in one embodiment, be the infrared array sensor of 64 × 64), realize frame rate high like this.

In one embodiment, with higher frame rate (such as, 240Hz or other frame rate), this infrared image frame from infrared sensor package 128 can be supplied to processing module 160.In another embodiment, infrared sensor package 128 can carry out integration in longer time period or multiple time period, thus with lower frame rate (such as, 30Hz, 9Hz or other frame rate) (after such as, being averaged) the infrared image frame after integration is supplied to processing module 160.About can be used for the U.S. Provisional Patent Application No.61/495 providing the details of catching the implementation of speed compared with hi-vision can submit on June 10th, 2011, find in 879, it is incorporated to herein by quoting entirety.

The picture frame 802 processed by streamline 800, for determining various adjustment item and gain compensation, wherein, is adjusted described picture frame 802 by various item, time-domain filtering.

At block 810 and 814, factory's gain term 812 and factory's shift term 816 are applied to picture frame 802, with the gain between the miscellaneous part compensating determined various infrared sensor 132 and/or infrared imaging module 100 during Computer-Assisted Design, Manufacture And Test respectively and offset deviation.

At block 580, NUC item 817 is applied to picture frame 802, to correct FPN as above.In one embodiment, if also do not determine NUC item 817 (such as, before starting NUC step), then may can not execution block 580, or initial value can be used for the NUC item 817 (such as, the deviant of each pixel will equal 0) that view data can not be caused to change.

At block 818 to 822, respectively row FPN item 820 and row FPN item 824 are applied to picture frame 802.Row FPN item 820 and row FPN item 824 can be determined as mentioned above according to block 550.In one embodiment, if also do not determine row FPN item 820 and row FPN item 824 (such as, before starting NUC step), then may can not execution block 818 and 822, or the row FPN item 820 that initial value can be used for causing view data to change and row FPN item 824 (such as, the deviant of each pixel will equal 0).

At block 826, according to noise in time domain abatement (TNR) step, time-domain filtering is performed to picture frame 802.Fig. 9 shows the TNR step according to disclosure execution mode.In fig .9, to the picture frame 802b process after the picture frame 802a be currently received and previous time-domain filtering to determine the picture frame 802e after new time-domain filtering.Picture frame 802a and 802b comprises local neighbor 803a and 803b respectively centered by pixel 805a and 805b.Neighbor 803a and 803b corresponds to the same position in picture frame 802a and 802b, and is the subset of the whole pixel of picture frame 802a and 802b.In the embodiment as shown, neighbor 803a and 803b comprises the region of 5 × 5 pixels.The neighbor of other sizes can be used in other execution modes.

Determine the difference of the pixel that neighbor 803a and 803b is corresponding and it is averaging, thinking that the position corresponding to pixel 805a and 805b provides average increment value 805c.Average increment value 805c is used in block 807 and determines weighted value, to apply it to pixel 805a and the 805b of picture frame 802a and 802b.

In one embodiment, as shown in curve chart 809, the weighted value determined at block 807 can be inversely proportional to average increment value 805c, and during to make that difference is larger between neighbor 803a and 803b, weighted value is reduced to 0 rapidly.With regard to this respect, between neighbor 803a and 803b, bigger difference can represent in scene and there occurs change (such as, the change occurred due to motion), and in one embodiment, suitable weighting can be carried out, to avoid to run into frame fuzzy to introducing during the scene change of frame to pixel 802a and 802b.Other associations between weighted value and average increment size 805c can be used in other execution modes.

The weighted value determined at block 807 can be used for pixel 805a and 805b, to determine the value (block 811) of the respective pixel 805e of picture frame 802e.With regard to this respect, pixel 805e can have according to the average increment value 805c determined at block 807 and weighted value the value after pixel 805a and 805b weighted average (or other combinations).

Such as, the pixel 805e of the picture frame 802e after time-domain filtering may be the pixel 805a of picture frame 802a and 802b and the weighted sum of 805b.If the average difference between pixel 805a and 805b causes due to noise, so can be expected that, the change of the mean value between neighbor 805a and 805b will close to 0 (such as, corresponding to the mean value of incoherent change).In this case, can be expected that, the difference between neighbor 805a and 805b and will close to 0.In this case, suitable weighting can be carried out to the pixel 805a of picture frame 802a, to contribute to the value generating pixel 805e.

But, if this difference and be not 0 (such as, in one embodiment, even very close to 0), so can by change interpretation for being by kinetic, instead of caused by noise.Therefore, the change of the mean value that can show based on neighbor 805a and 805b detects motion.In this case, larger weight can be applied to the pixel 805a of picture frame 802a, and less weight is applied to the pixel 805b of picture frame 802b.

Other execution modes are also admissible.Such as, although what describe is determine average increment value 805c according to neighbor 805a and 805b, but in other embodiments, average increment value 805c can be determined according to the standard of any expectation (such as, according to the pixel groups be made up of a series of pixel of single pixel or other types).

In superincumbent execution mode, picture frame 802a is described as the picture frame be currently received, and picture frame 802b is described as the picture frame previously after time-domain filtering.In another embodiment, picture frame 802a and 802b can be infrared imaging module 100 capture also not through the first and second picture frames of time-domain filtering.

Figure 10 shows the detailed implementation detail relevant with the TNR step performed by block 826.As shown in Figure 10, respectively picture frame 802a and 802b is read into line buffer 1010a and 1010b, and before picture frame 802b (such as, previous image frames) is read into line buffer 1010b, can be stored in frame buffer 1020.In one embodiment, one piece of random asccess memory (RAM) that can be provided by any suitable parts of infrared imaging module 100 and/or host apparatus 102 realizes line buffer 1010a-b and frame buffer 1020.

Refer again to Fig. 8, picture frame 802e can be sent to automatic gain compensation block 828, it is further processed picture frame 802e, the result images frame 830 that can use as required to provide host apparatus 102.

Fig. 8 further illustrates the various operations for determining as discussed performed by row and column FPN item and NUC item.In one embodiment, these operations can use picture frame 802e as shown in Figure 8.Because carried out time-domain filtering to picture frame 802e, so at least some noise in time domain can be eliminated, thus can not casual impact to the determination of row and column FPN item 824 and 820 and NUC item 817.In another embodiment, can use not through the picture frame 802 of time-domain filtering.

In fig. 8, the block 510,515 of Fig. 5 is together with 520 expressions of concentrating.As discussed, can event be started in response to various NUC step and optionally start based on various standard or condition and perform NUC step.Also as discussed, according to based drive method (block 525,535 and 540) or NUC step can be performed based on the method defocused (block 530), to provide fuzzy picture frame (block 545).Fig. 8 further illustrates the various extra blocks 550,552,555,560,565,570,571,572,573 and 575 about Fig. 5 previously discussed.

As shown in Figure 8, row and column FPN item 824 and 820 and NUC item 817 can be determined, and apply above-mentioned item in an iterative manner, determine the item upgraded to make to use the picture frame 802 having applied first preceding paragraph.As a result, the institute of Fig. 8 can repeatedly upgrade in steps, and apply these with the noise in the picture frame 830 reducing host apparatus 102 continuously and will use.

Refer again to Figure 10, it illustrates the detailed implementation detail of various pieces relevant with streamline 800 in Fig. 5 and Fig. 8.Such as, block 525,535 and 540 is shown as the regular frame rate operation of the picture frame 802 to be received by streamline 800.In the execution mode shown in Figure 10, the decision made at block 525 is expressed as and determines rhombus (decisiondiamond), it is for determining whether Given Graph picture frame 802 changes fully, thus can think if picture frame is joined in other picture frames, this picture frame will strengthen fuzzy, therefore this picture frame is carried out adding up (in this embodiment, representing block 535 by arrow) and average (block 540).

Equally in Fig. 10, to be shown as with renewal rate operation, in this example embodiment, due to the average treatment performed at block 540 to the determination (block 550) of row FPN item 820, this renewal rate is 1/32 of transducer frame rate (such as, regular frame rate).Other renewal rates can be used in other execution modes.Although Figure 10 only identifies row FPN item 820, can in an identical manner, with the frame rate reduced to realize row FPN item 824.

Figure 10 also show the detailed implementation detail relevant with the NUC determining step of block 570.With regard to this respect, ambiguity diagram picture frame can be read into line buffer 1030 (block RAM such as, provided by any suitable parts of infrared imaging module 100 and/or host apparatus 102 realizes).The flat field correction technology 700 of Fig. 7 can be performed to ambiguity diagram picture frame.

In view of content of the present disclosure, should be understood that, technology described herein can be used for eliminating various types of FPN (such as, comprising the FPN of very high-amplitude), such as, and the row and column FPN of space correlation and space-independent FPN.

Other execution modes are also admissible.Such as, in one embodiment, the renewal rate of row and column FPN item and/or NUC item can be inversely proportional to the fuzzy estimate amount in ambiguity diagram picture frame, and/or is inversely proportional to the size of local contrast value (such as, in the local contrast value that block 560 is determined).

In various embodiments, the technology of description is better than traditional noise compensation technology based on shutter.Such as, by using the step without shutter, do not need to arrange shutter (such as, as shutter 105), thus can reduced in size, weight, cost and mechanical complexity.If do not need the operation shutter of machinery, the power supply and maximum voltage that are supplied to infrared imaging module 100 or produced by infrared imaging module 100 also can be reduced.By being removed by the shutter as potential fault point, reliability will be improved.The potential image that step without shutter also eliminates caused by the temporary jam of the scene by shutter imaging interrupts.

Same, by using the ambiguity diagram picture frame of catching from real scene (not being the even scene that shutter provides) to correct noise wittingly, noise compensation can be carried out by the picture frame similar with expecting those real scenes of imaging to radiation level.This can improve precision according to the determined noise compensation item of the technology of various description and efficiency.

As discussed, in various embodiments, infrared imaging module 100 can be configured to work at lower voltages.Especially, by being configured to work under low-power consumption and/or realize infrared imaging module 100 according to the circuit of other parameter work, other parameters described allow infrared imaging module 100 easily and effectively to realize in various types of host apparatus 102 (such as, mobile device and other devices).

Such as, Figure 12 show according to disclosure execution mode, the block diagram of another implementation of the infrared sensor package 128 that comprises infrared sensor 132 and low-dropout regulator (LDO) 1220.As shown in the figure, Figure 12 also show various parts 1202,1204,1205,1206,1208 and 1210, can to realize these parts with the previously described mode identical or similar about the corresponding parts of Fig. 4.Figure 12 also show bias voltage correction circuit 1212, and it can be used for adjusting (such as, with compensation temperature change, self-heating and/or other factors) one or more bias voltage being supplied to infrared sensor 132.

In some embodiments, LDO1220 can be set to a part (such as, be positioned on identical chip and/or wafer-class encapsulation is ROIC) for infrared sensor package 128.Such as, LDO1220 can be set to a part of the FPA with infrared sensor package 128.As discussed, this realization can reduce the power supply noise be incorporated in infrared sensor package 128, thus provides the PSRR of improvement.In addition, by utilizing ROIC to realize LDO, less die area can be consumed, and need less separation matrix (or chip).

LDO1220 receives by feed line 1232 input voltage that power supply 1230 provides.LDO1220 provides output voltage by feed line 1222 to the various parts of infrared sensor package 128.With regard to this respect, according to the U.S. Patent application No.14/101 such as submitted on December 9th, 2013, the various technology described in 245 (they are incorporated to herein by quoting entirety), LDO1220 can in response to the single input voltage received from power supply 1230, and all parts to infrared sensor package 128 provides substantially the same regulation output voltage.

Such as, in some embodiments, power supply 1230 can provide from about 2.8v to the input voltage of about 11v scope (such as, be about 2.8v in one embodiment), and LDO1220 can provide the output voltage from about 1.5v to about 2.8v scope (such as, be approximately 2.8 in each execution mode, 2.5,2.4v and/or lower voltage).With regard to this respect, no matter power supply 1230 is to provide the conventional voltage scope of about 9v to about 11v, and be also to provide low-voltage (such as, about 2.8v), LDO1220 can be used for providing constant regulation output voltage.Therefore, although provide multiple voltage scope for input and output voltage, can be expected that, no matter how input voltage changes, and the output voltage of LDO1220 will remain unchanged.

Compared with the conventional power source for FPA, part LDO1220 being embodied as infrared sensor package 128 has lot of advantages.Such as, traditional FPA depends on multiple power supply usually, and each in described multiple power supply is discerptible powers to FPA, and all parts being distributed in FPA separated.By being regulated single supply 1230 by LDO1220, the discriminable all parts being supplied to the infrared sensor package 128 of (such as, to reduce possible noise) low-complexity of suitable voltage.Even if the input voltage from power supply 1230 changes (such as, if due to battery or make input voltage increase or reduce for the charging of the device of the other types of power supply 1230 or electric discharge), the use of LDO1220 also makes infrared sensor package 128 still can work in a constant manner.

The various parts of the infrared sensor package 128 shown in Figure 12 also can be embodied as at the lower operating at voltages of the voltage used than conventional apparatus.Such as, as discussed, LDO1220 can be embodied as provides low-voltage (such as, about 2.5v).This and the multiple high voltages be generally used for as traditional FPA powers define striking contrast, and described multiple high voltage is such as: for the voltage of the about 3.3v to about 5v for supplying digital circuits; For the voltage of about 3.3v of powering for analog circuit; And for the voltage of the about 9v to about 11v for load supplying.Same, in some embodiments, the use of LDO1220 can reduce or eliminate the needs to the independent negative reference voltage being supplied to infrared sensor package 128.

With reference to Figure 13, other aspects of the low voltage operating of infrared sensor package 128 can be understood further.Figure 13 show according to disclosure execution mode, the circuit diagram of the part of the infrared sensor package 128 of Figure 12.Especially, Figure 13 shows the miscellaneous part (such as, parts 1326,1330,1332,1334,1336,1338 and 1341) of the bias voltage correction circuit 1212 being connected to LDO1220 and infrared sensor 132.Such as, according to embodiment of the present disclosure, bias voltage correction circuit 1212 can be used for compensating the change depending on temperature in bias voltage.Be 7,679 by reference to publication number, 048, publication date is the similar parts indicated in the United States Patent (USP) in March 16 in 2010, the operation of these other annexes can be understood further, it can be used as entirety to be herein incorporated by way of reference.Can be also 6,812 according to publication number, 465, publication date be the various parts that indicate in the United States Patent (USP) on November 2nd, 2004 to realize infrared sensor package 128, it can be used as entirety to be herein incorporated by way of reference.

In various embodiments, all or part of bias voltage correction circuit 1212 can realize on integral array basis as shown in fig. 13 that (such as, for concentrating all infrared sensors 132 in an array).In other embodiments, all or part of bias voltage correction circuit 1212 (such as, each transducer 132 being copied in whole or in part) can be realized on single-sensor basis.In some embodiments, the bias voltage correction circuit 1212 of Figure 13 and miscellaneous part can be embodied as a part of ROIC1202.

As shown in figure 13, LDO1220 provides load voltage Vload to the bias voltage correction circuit 1212 along in feed line 1222.As discussed, in some embodiments, Vload can be approximately 2.5v, and in contrast, the size that can be used as the load voltage in traditional infrared imaging device is approximately the higher voltage of 9v to about 11v.

Based on Vload, bias voltage correction circuit 1212 provides sensor bias voltage Vbolo at node 1360.Vbolo is distributed to one or more infrared sensor 132 by the switching circuit 1370 (such as, being represented by the dotted line in Figure 13) be applicable to.In some instances, can be 6,812,465 and 7,679 according to the publication number quoted before this paper, the suitable parts indicated in the patent of 048 be to realize switching circuit 1370.

Each infrared sensor 132 include by switching circuit 1370 receive Vbolo node 1350 and can another node 1352 of ground connection, substrate and/or negative reference voltage.In some embodiments, the voltage at node 1360 place is substantially identical with the Vbolo at node 1350 place.In other embodiments, adjustable at the voltage at node 1360 place, to compensate the possible pressure drop relevant with switching circuit 1370 and/or other factors.

The voltage that the voltage that usually uses than traditional infrared transducer bias voltage can be utilized lower is to realize Vbolo.In one embodiment, Vbolo can from about 0.2v to the scope of about 0.7v.In another embodiment, Vbolo can in the scope of about 0.4v to about 0.6v.In another embodiment, Vbolo is approximately 0.5v.By contrast, the normally used bias voltage of traditional infrared transducer is approximately 1v.

Compared with traditional infreared imaging device, make infrared sensor package 128 can have significantly reduced power consumption according to infrared sensor 132 of the present disclosure compared with the use of low bias voltage.Especially, the power consumption of each infrared sensor 132 is with square minimizing of bias voltage.Therefore, the reduction (such as, dropping to 0.5v from 1.0v) of voltage provides the reduction of significant power consumption, particularly when the reduction of described voltage is applied to the multiple infrared sensor 132 in infrared array sensor.The reduction of this power also can cause the minimizing of the self-heating of infrared array sensor 128.

Embodiment there is provided various technology for reducing the noise effect in the picture frame provided by the infreared imaging device being operated in low-voltage according to of the present disclosure other.With regard to this respect, when infrared sensor package 128 is with described low voltage operating, if do not corrected noise, self-heating and/or other phenomenons, in the picture frame that described noise, self-heating and/or other phenomenons can provide at infrared sensor package 128, become more obvious.

Such as, with reference to Figure 13, when LDO1220 remains on low-voltage Vload in a manner described herein, Vbolo also will remain on its corresponding low-voltage, and can reduce the relative size of its output signal.Therefore, noise, self-heating and/or other phenomenons can produce larger impact to the less output signal read from infrared sensor 132, thus cause the change (such as, mistake) of output signal.If do not corrected, these changes may show as the noise in picture frame.In addition, although low voltage operating can reduce some phenomenon (such as, self-heating) total number, but the error source that less output signal can make to remain (such as, residual self-heating) produces out-of-proportion impact to output signal during low voltage operating.

In order to compensate this phenomenon, various array sizes, frame rate and/or frame averaging can be utilized to realize infrared sensor package 128, infrared imaging module 100 and/or host apparatus 102.Such as, as discussed, various different array sizes can be considered for infrared sensor 132.In some embodiments, the infrared sensor 132 of the array sizes of scope from 32 × 32 to 160 × 120 can be utilized to realize infrared sensor 132.The array sizes of other examples comprises 80 × 64,80 × 60,64 × 64 and 64 × 32.Any desired size can be used.

Advantageously, when utilizing this relatively little array sizes to realize infrared sensor package 128, described infrared sensor package 128 without the need under carrying out more cataclysmal situation to ROIC and interlock circuit, can provide picture frame with relatively high frame rate.Such as, in some embodiments, the scope of frame rate can from about 120Hz to about 480Hz.

In some embodiments, array sizes and frame rate can relative to each other between increase and decrease (such as, with inversely proportional mode or other modes), to make larger array be embodied as, there is lower frame rate, and less array is embodied as and has higher frame rate.Such as, in one example in which, the array of 160 × 120 can provide the frame rate being approximately 120Hz.In another embodiment, the array of 80 × 60 can provide the higher frame rate being approximately 240Hz accordingly.Other frame rate are also admissible.

By array sizes and frame rate relative to each other between increase and decrease, no matter actual FPA size or frame rate be how many, and the row of FPA and/or the specific reading of row regularly can remain unchanged.In one embodiment, reading timing can be approximately every row or column 63 microsecond.

As the discussion before about Fig. 8, the picture frame that infrared sensor 132 is caught can be supplied to frame averager 804, described frame averager 804 asks the integration of multiple picture frame to have low frame rate (such as to provide, about 30Hz, approximately 60Hz or other frame rate) and the picture frame 802 (picture frame such as, after process) of signal to noise ratio of improvement.Especially, by being averaged to the high frame rate picture frame provided by relatively little FPA, the picture noise produced effectively on average can being fallen and/or reduce significantly in picture frame 802 due to low voltage operating.Therefore, infrared sensor package 128 can be operated in the relatively low voltage provided by LDO1220 as discussed, and after frame averager 804 processes the picture frame 802 produced, infrared sensor package 128 can not be subject to the impact of extra noise in the picture frame 802 of described generation and relevant side effect.

Other execution modes are also admissible.Such as, although show the single array of infrared sensor 132, can be expected that, multiple such array can be used together to provide the picture frame of high-resolution (such as, a scene can imaging on multiple such array).This array can be arranged on multiple infrared sensor package 128 and/or be arranged in same infrared sensor package 128.As described, each such array all can be operated in low-voltage, and also can be the relevant ROIC circuit of each such array configurations, to make the frame rate work that each array still can be relatively high.Shared or dedicated frame averager 804 can be averaged to the high frame rate picture frame provided by this array, to reduce and/or to eliminate the noise relevant to low voltage operating.Therefore, still high-resolution Thermo-imaging system can be obtained when being operated in low-voltage.

In various embodiments, infrared sensor package 128 can be embodied as suitable size, can use together with the socket 104 (such as, for the socket of mobile device) of little form factor to make infrared imaging module 100.Such as, in some embodiments, infrared sensor package 128 can be embodied as the chip size that scope is about 4.0mm × approximately 4.0mm to about 5.5mm × about 5.5mm (such as, in one embodiment, about 4.0mm × approximately 5.5mm).Infrared sensor package 128 can be embodied as this size or other suitable sizes, to make it possible to use together with the socket 104 being embodied as various sizes, the size of described socket 104 is such as: 8.5mm × 8.5mm, 8.5mm × 5.9mm, 6.0mm × 6.0mm, 5.5mm × 5.5mm, 4.5mm × 4.5mm and/or other jack sizes, such as, the application number submitted to the 10 days June in 2011 as being incorporated to this paper by quoting entirety is those sizes shown in the U.S. Provisional Patent Application table 1 of 61/495,873.

As discussed, in each execution mode, infrared imaging module 100 can be configured to low voltage level operation and/or various types of configuration (such as, hardware and/or software merit rating) operation.As herein according to one or more execution mode discussed, novel handoff technique can be embodied in infrared array sensor, is configured to all size desired by given application and/or Pixel Dimensions to make this array.

Such as, Figure 14 show according to disclosure execution mode, the block diagram of another implementation of the infrared sensor package 1400 that comprises infrared array sensor 1406.As shown, infrared sensor package 1400 can be implemented with the similar mode of infrared sensor package 128 description of 12 with reference to Fig. 4, but also comprises the handoff technique of described further novelty herein.

Infrared sensor package 1400 can comprise row access circuit 1402, and its suitable line being suitable for enable line 1410 is to read the output relevant with the infrared sensor 1408 being connected to enable line.In each execution mode, as understood by those skilled in the art, row access circuit 1402 can be suitable in response to the signal from timing control circuit 1401, a line selectively in enable line 1410.In one or more execution mode, row access circuit 1402 can the mode similar with the row multiplexer 408/1208 of 12 to Fig. 4 be implemented, but can be further adapted for according to the detector further described herein-compartmentalization technology selectively enable line 1410.Similarly, in one or more execution mode, the timing that timing control circuit 1401 can produce with bias voltage and the timing control part of timing control circuit 404/1204 divides similar manner to implement with control lines access circuit 1402 and column circuits 1404, but can be further adapted for and change this timing to provide detector-compartmentalization as further described herein.

Infrared sensor package 1400 can also comprise column circuits 1404, and it can represent column amplifier 405/1205, bias voltage correction circuit 412/1212, distortion correction circuit and/or row analog to digital (A/D) transducer.Therefore, such as, column circuits 1404 can be suitable for providing bias voltage (such as, above for Figure 13 describe Vbolo), correct bias voltage, correcting action, amplification export, convert output to digital signal, and/or to select line 1410 perform be used for alignment 1410 each infrared sensor 1408 other operation.That is, a common picture frame reading cycle period (such as, infrared sensor package 1400 under the non-compartmentalization pattern further described herein), continuous print line 1410 is once enable by line according to timing signal by row access circuit 1402, and column circuits 1410 is enabled period (such as, also referred to as " row access time ") to all infrared sensors 1408 executable operations concurrently in the line 1410 be enabled at line 1410.

Infrared sensor 1408 can the mode similar with the infrared sensor 132 of 4 to Fig. 3 be implemented.Therefore, for example, infrared sensor 1408 can use micro-metering bolometer to implement, and this micro-metering bolometer is each adapted to when detecting it and exporting, and is connected to an alignment 1412 and a line 1412.But, described by as further in this paper, the array 1406 of this infrared sensor 1408 can comprise novel commutation circuit, and it can be suitable for selectively being connected with alignment 1412 and/or line 1410 by infrared sensor 1408 or disconnecting, to allow detector-compartmentalization.

Figure 15 show according to disclosure execution mode, the block diagram of infrared sensor package 1400 that uses detector-compartmentalization technical configuration.As concise and to the point description, according to one or more execution mode disclosed herein, the infrared sensor 1408 in array 1406 can selectively be connected with alignment 1412 and line 1410 and/or disconnect.In addition, according to one or more execution mode disclosed herein, two or more infrared sensors 1408 in array 1406 can selectively be connected to each other.Therefore, in one or more execution mode, the cluster of the adjacent infrared sensor 1408 in array 1406 can divide into groups (or " compartmentalization ") together, with the detector 1508 of forming region.In illustrated execution mode and other execution modes, the cluster of four adjacent infrared sensors 1408 (1), 1408 (2), 1408 (3) and 1408 (4) during 2*2 arranges can be grouped in together, with the detector 1508 of forming region.Therefore, according to this execution mode, the compartmentalization pattern array 1506 of the generation of the detector 1508 of compartmentalization can utilize the line 1512 of the alignment 1510 of half number and half number as physical array 1406.Can recognize, line 1510 and alignment 1512 are illustrated as the half of the number of line 1410 and alignment 1412, so that represent and can not use, forbid or combine some lines 1410 and alignment 1412 for compartmentalization pattern array 1506 as further described herein.

According to various execution mode, the compartmentalization pattern array 1506 of generation can provide higher frame rate, the detector sensitivity of increase and/or the power consumption of reduction.In the above example, because in compartmentalization pattern array 1506, the number of the alignment 1510 of use is halved (such as, the number relative to line 1410), so the row access time can double.As mentioned above, the row access time can be that each effective line 1510 was enabled for the duration of the parallel work-flow of column circuits 1404.As instantiation, the frame rate for the 60Hz of the regular array 1406 of non-compartmentalization can produce the row access time of 65 microseconds, and for compartmentalization pattern array 1506, the row access time can be 140 microseconds.Because the detector 1508 of the compartmentalization of each alignment 1512 in the line 1510 selected can biased, offset correction, sampling, amplification, A/D conversion, or otherwise the output detected during there is the access time of being expert at, so double the time of integration doubling the output of the detector 1508 being allowed for sample area of row access time.The doubling and detector susceptibility can be allowed to increase of the time of integration.In the specific implementation of ROIC, such as, the time of integration double can cause susceptibility increase by 40%.

Meanwhile, according to each execution mode, the doubling of row access time can reduce power consumption.Such as, because A/D converter and/or other reading circuits can Half Speed run, and double due to the row access time, complete the operation that they want in its access time of still can being expert at, the clock rate of ROIC can reduce up to 50% to save power.According to various execution mode, further power consumption is also possible.Such as, as discussed above, according to various execution mode, the number of the alignment 1512 used also can reduce by half (such as, number relative to alignment 1412), this can allow in column circuits 1404 every a column circuits be closed or otherwise under being in low-power mode, to reduce power.

Further, according to each execution mode, four in above example adjacent infrared sensors 1408 (1), 1408 (2), 1408 (3) can series-multiple connection mode be connected (such as with 1408 (4), two groups that are connected in series two groups of being connected in parallel or being connected in parallel are connected in series), with the detector 1508 of forming region.Therefore, the detector 1508 becoming the compartmentalization of a group can show the identical combined resistance of the infrared sensor 1408 of the non-compartmentalization independent with to ROIC, produces the noise level that the infrared sensor 1408 of the non-compartmentalization independent with is identical.In addition, 1/4 of the bias voltage received when each in four infrared sensors in the detector 1508 of compartmentalization can receive non-compartmentalization, the responsiveness shown when producing non-compartmentalization 1/4 responsiveness.But because the detector of compartmentalization 1508 has the detector region of four times, (such as, four times of responsiveness of single infrared sensor) can be identical so the synthesis responsiveness of the detector 1508 of compartmentalization.Therefore, by bias voltage being increased up to four times with by high for four the infrared sensor bias voltages level to receiving separately during non-compartmentalization, responsiveness can be increased up to four times.

Therefore, power consumption, the various combinations of compromising between susceptibility and the frame rate compartmentalization pattern array 1506 that embody rule can be used desirable.In an exemplary configuration, there is provided the frame rate of picture frame can remain on the speed identical with non-compartmentalization pattern array 1406 from compartmentalization pattern array 1506, and doubling therefore due to the row access time as above, can obtain the minimizing of power consumption.In addition, in same number of frames speed, the susceptibility of the detector 1508 of compartmentalization can be 140% of the independently infrared sensor 1408 of non-compartmentalization, and can increase up to 4 times to 560% by increasing bias voltage as described above.

In another exemplary configuration, frame rate can double (such as, identical with the row access time of non-compartmentalization pattern array 1408 by the row access time of retaining zone pattern array 1508), but do not reduce power consumption or increase the susceptibility that works is doubled to the row access time.Susceptibility can increase by increasing bias voltage as described above always, but, be up to 400%.

As can be appreciated, other configurations having different compromise in power consumption, susceptibility and frame rate can be possible.In addition, if the number of variations of the infrared sensor 1408 of the detector of forming region 1508 (such as, unnecessary four of providing for above example of number), the power that so can obtain in various degree is saved, susceptibility increases and/or frame rate increases.According to each execution mode, various different configuration can by user automatically and/or dynamically according to operating condition (such as, based on power consumption) select or otherwise limit, or otherwise such desired by the embody rule of infrared sensor package 128, infrared imaging module 100 and/or host apparatus 102 select.

As discussed, according to each execution mode, the commutation circuit arranged in array 1406/1506 can be suitable for optionally being connected with line 1410, alignment 1412 by infrared sensor 1408 or disconnecting, and/or infrared sensor 1408 is optionally connected or disconnection each other, to allow detector-compartmentalization.This commutation circuit according to one or more execution mode can be understood better with reference to Figure 16-20.Figure 16 show according to disclosure execution mode, the circuit diagram 1600 of the part of the infrared sensor package of Figure 14.In the embodiment shown, the cluster of infrared sensor 1408 (1), 1408 (2), 1408 (3) and 1408 (4) can be optionally connected to line 1410, alignment 1412 and/or be connected to each other by shown switch S 1 to S6, each correspondence one that can implement in bolometer R1 to R4 in described infrared sensor.In addition, contiguous alignment 1412 optionally can be connected by row switch 1602.

Switch S 1-S6 and row switch 1602 can limit the changeable interconnection of the cluster of infrared sensor 1408 (1), 1408 (2), 1408 (3) and 1408 (4).As shown, according to one or more execution mode, bolometer R1 (infrared sensor 1408 (1)) can be connected to its contiguous alignment 1412 (such as, be labeled as " row 1 "), and can optionally be connected to its contiguous line 1410 (such as, being labeled as " row 1 ") by switch S 1.Similarly, bolometer R2 (infrared sensor 1408 (2)) can be connected to its contiguous alignment 1512 (such as, be labeled as " row 2 "), and can optionally be connected to its contiguous line 1410 (such as, being labeled as " row 1 ") by switch S 4.According to one or more execution mode, switch S 1 and S4 can be suitable for bolometer R1 and R2 being optionally connected to respectively line 1410 (such as, being labeled as " row 1 ").In one or more execution mode, bolometer R3 can be connected in a complementary fashion with R4.That is, they can be connected to its contiguous bonding wire 1410 (such as, be labeled as " row 2 "), and each alignment 1412 (such as, being labeled as respectively " row 1 " and " row 2 ") that selectively can be connected to its vicinity respectively by switch S 3 and S6 in them.According to one or more execution mode, switch S 2 can be suitable for selectively being connected in series bolometer R1 and R3, and similarly, switch S 5 can be suitable for selectively being connected in series bolometer R2 and R4.For each cluster of the infrared sensor of four in array 140,6/1,506 1408, the changeable interconnection in illustrated embodiment can repeat.Circuit 1600 in Figure 16 is illustrated in changeable interconnection has all switch S 1-S6 and 1602, and for the object that changeable interconnection is shown, changeable interconnection is shown in opens (such as, not starting) position.

Figure 17 show according to disclosure execution mode, the circuit diagram 1600 of Figure 16 that configures with the first mode operated (such as, normally or non-compartmentalization pattern).As shown, according to one or more execution mode, in normal/non-compartmentalization pattern, switch S 1 and S4 can close, each bolometer R1 and R2 to be connected to its contiguous line 1410 (row 1), and switch S 3 and S6 can close, each bolometer R3 and R4 to be connected to its contiguous line 1410 (row 2).According to one or more execution mode, switch S 2, S5 and row switch 1602 can stay open.Therefore, bolometer R1-R4 can be connected to line 1410 and the alignment 1412 of its correspondence, but each other not connected in series or in parallel (such as, by row switch 1602), thus when its contiguous line is enabled, allow column circuits (such as, comprising bias voltage, offset correction, sampling, amplifier and/or A/D converter circuit) corresponding in column circuits 1402 to read it to export.

This read operation under normal mode can be understood better with reference to Figure 18 and 19.Figure 18 and 19 show according to disclosure execution mode, with the circuit diagram 1600 of Figure 16 of the operative configuration of the first mode operated (such as, normally or non-compartmentalization pattern), show the electric current when line is enabled and how to pass through bolometer.As shown in Figure 18, according to one or more execution mode, when line 1410 (row 1) is enabled (such as, be connected to reference voltage line), bias current from each column circuits (such as, bias voltage in response to each column circuits provides) flow to corresponding bolometer, and flow out to the line 1410 (row 1) connected with corresponding bolometer by Closing Switch S1 or the S4 of correspondence.As skilled in the art to understand, then each column circuits in column circuits 1404 can detect the voltage that current flowing produces, and perform other proper handlings as above (such as, sampling, amplification, A/D conversion and other proper handlings), to read the output relevant to each bolometer adjacent to enable line 1410 (row 1).Similarly, according to one or more execution mode, as shown in Figure 19, closed switch S 3 and S6 can allow bolometer R3 and R4 to be connected to the alignment 1412 (row 1 and row 2) of corresponding vicinity respectively, thus allow the bias current of column circuits 1404 to flow through corresponding bolometer R3 and R4, and flow out with enable line 1410 (row 2).For each row of array, this process can repeat.

Figure 20 show according to disclosure execution mode, the circuit diagram 1600 of Figure 16 that configures with the second pattern (such as, compartmentalization pattern) operated.As shown, according to one or more execution mode, switch S 1 and S3 can open now, and switch S 2 can close.Therefore, bolometer R1 and R3 can be formed and be connected in series, and wherein line 1510 (row 1 ' marks again from the row 2 of line 1410) is used as the bolometer R1 of series connection and the contiguous line of R3.Similarly, switch S 4 and S6 can open, and switch S 5 can close, and to form the bolometer R2 and R4 that are connected in series, wherein this is connected to row 1 '.In addition, according to one or more execution mode, row switch 1602 can close, and to combine the alignment 1412 (being labeled as row 1 and row 2) of two vicinities before, thus forms alignment 1512 (being labeled as row 1 ').This has makes two to be connected in series (such as, bolometer R1+R3 in a series connection and the bolometer R2+R4 in another series connection) effect that is connected in parallel, as above for Figure 15 institute discuss, produce the serial-parallel connection of four bolometer R1-R4.As above for Figure 15 discuss, four bolometer R1-R4 can the detector 1508 of forming region, it has and single bolometer R1, resistance that R2, R3 or R4 are identical, and compared with single bolometer R1, R2, R3 or R4, allow susceptibility increase, power consumption reduces and/or frame rate increases.

As shown in Figure 20, only the column circuits of half may need to be enabled to provide bias voltage and other read operations (such as, row 1 ' perform and are used for the row 1 of Figure 16-19 and the read operation of row 2) performed for the detector of compartmentalization.Such as, as shown, the bias current from row 1 ' or row 2 ' flows through all four bolometer R1-R4 and flows out to the line 1510 (row 1 ') of the correspondence of the detector 1508 for compartmentalization.

In each execution mode, suitable control circuit can be provided as a part for infrared sensor package 128, and this suitable control circuit can be suitable for selectively opening or switch S 1-S6 in closed changeable interconnection and row switch 1602, think that the non-compartmentalization pattern of operation or compartmentalization pattern configure the array of infrared sensor 1408 suitably.Such as, the control circuit of changeable interconnection may be embodied as the part of other control circuits for timing control circuit road 1401, processing module 160 and/or infrared sensor package 128.In another example, the control circuit of changeable interconnection can be separated enforcement with miscellaneous part, and is suitable for, in response to the control bit loading or be otherwise transferred to control circuit, being suitably configured for the switch of the changeable interconnection of different mode.

Figure 21 show according to disclosure execution mode, with reference to first (such as, normal) of the operation of Figure 17-20 and the sequential chart of second (such as, compartmentalization) pattern.Such as, sequential chart 2100 and 2102 can represent control signal, and it becomes effectively (such as from sequential control circuit 1401, enable) and become invalid, and received by row access circuit 1402, with as with reference to Figure 14 discuss, sequentially enable line during read operation.According to one or more execution mode, as shown in sequential chart 2100, in the normal mode, each line can be continuously enabled one section of row access duration time 2104.By contrast, under compartmentalization pattern (such as, according to sequential chart 2102), only can be continuously enabled every a line, reason is as discussed above, and the bolometer in two row is connected in series.In addition, as above with reference to Figure 15 discuss, the row access time 2106 for each line be enabled can be two double-lengths of row access time 2104, and this row access time 2104 can allow longer integration for the susceptibility of the increase of the detector 1508 of compartmentalization.Similarly, as described above, the row access time 2106 can be reduced to the duration similar to the row access time 2104, correspondingly to increase frame rate, and compromise power consumption and susceptibility simultaneously.

Therefore, in one or more execution mode, the detector-compartmentalization technology being used in the changeable interconnection implemented in infrared sensor 1408 array can allow all size being configured as embody rule expectation and/or the Pixel Dimensions of array valuably.Such as, according to one or more execution mode, can when damaged pixel resolution for the array of compartmentalization pattern configurations of the detector 1508 with compartmentalization, the frame rate of the susceptibility of increase, the power consumption of minimizing and/or increase is provided.When having used 2*2 compartmentalization to describe various detector-compartmentalization technology as particular instance above, can based on the scope of the present disclosure with spirit or in the scope of the present disclosure and spirit, revise described technology to provide other the compartmentalization size of space (such as, the detector of 3*3 or other square region or the detector of non-square compartmentalization).In addition, should be appreciated that, technology disclosed herein can be applied to various types of micro-radiation bolometer array, and is not limited to concrete micro-radiation bolometer array implementation disclosed herein.As the disclosure use, can interchangeably use term row and column according to the orientation of the miscellaneous part of array 1406/1506 and/or infrared sensor package 128, therefore term row and column is nonrestrictive.

In a suitable case, realize by the combination of hardware, software or hardware and software the various execution modes that the disclosure provides.Equally in a suitable case, when not departing from spirit of the present disclosure, proposed various hardware component and/or software part can be merged into and comprising software, hardware and/or the composite component of the two.In a suitable case, when not departing from spirit of the present disclosure, proposed various hardware component and/or software part can be separated into and comprise software, hardware or the subassembly of the two.In addition, in a suitable case, can be expected that, software part can be embodied as hardware component, and vice versa.

According to software of the present disclosure, such as, non-transitory instruction, program code and/or data can be stored in one or more non-transitory machine readable media.Can also be expected that, can use one or more general or special-purpose computer and/or computer system, network and/or other modes realize herein mentioned by software.In a suitable case, the order of various step described herein can change, merges into composite steps and/or be separated into sub-step, to provide function described herein.

Execution mode described above only illustratively, instead of limits the utility model.It is to be further understood that, according to principle of the present utility model, many amendments and change are possible.Therefore, scope of the present utility model is only limited by claims below.

Claims

1. having can the imaging device of compartmentalization bolometer, it is characterized in that, comprising:

Focal plane array, it is suitable for the picture frame of capturing scenes, and described focal plane array comprises:

Multiple bolometer, it arranges in an array to provide corresponding multiple pixels;

Multiple alignment, it is suitable for providing bias voltage to bolometer;

Multiple line, it is suitable for providing reference voltage to bolometer; And

Multiple first switch, it is suitable for optionally connecting two or more contiguous alignments, two or more to divide into groups in bolometer, thus the bolometer of forming region in an array.

2. according to claim 1 have can the imaging device of compartmentalization bolometer, and it is characterized in that, described focal plane array also comprises:

Multiple second switch, it is suitable for some in bolometer to be optionally connected to line;

Multiple 3rd switch, it is suitable for some in bolometer to be optionally connected to alignment;

Multiple 4th switch, it is suitable for optionally being connected in series some in bolometer; And

Wherein, multiple first switch, multiple second switch, multiple 3rd switch and multiple 4th switch are suitable for optionally opening or closing, with by two or more compartmentalizations every in adjacent bolometer together, thus the bolometer of forming region.

3. according to claim 2 have can the imaging device of compartmentalization bolometer, it is characterized in that, when multiple first switch and multiple 4th switch closed and multiple second switch and multiple 3rd switch opens, and the bolometer of forming region.

4. according to claim 1 have can the imaging device of compartmentalization bolometer, and it is characterized in that, the bolometer of described compartmentalization has the resistance of the resistance being substantially equal to bolometer.

5. according to claim 1 have can the imaging device of compartmentalization bolometer, and it is characterized in that, the bolometer of each compartmentalization comprises four bolometers taking advantage of 2 configurations in 2.

6. according to claim 1 have can the imaging device of compartmentalization bolometer, it is characterized in that,

Described focal plane array also comprises reading integrated circuit, and it is electrically connected to alignment and is suitable for providing picture frame; And

When the bolometer of compartmentalization is formed in an array, described reading integrated circuit is also suitable for increasing the speed providing picture frame.

7. according to claim 1 have can the imaging device of compartmentalization bolometer, it is characterized in that,

Described focal plane array also comprises reading integrated circuit, and it is electrically connected to alignment and is suitable for providing bias voltage to bolometer; And

When the bolometer of compartmentalization is formed, described reading integrated circuit is also suitable for increasing bias voltage, to increase the susceptibility of the bolometer of compartmentalization.

8. according to claim 1 have can the imaging device of compartmentalization bolometer, it is characterized in that, described bolometer is suitable for range of receiving from the bias voltage of 0.2 volt to 0.7 volt.

9. according to claim 1 have can the imaging device of compartmentalization bolometer, it is characterized in that,

Described focal plane array is suitable for the picture frame of the deliberate fuzziness of capturing scenes; And

Described have and the imaging device of compartmentalization bolometer also can comprise processor, and it is suitable for:

Communicate with focal plane array,

Based on the picture frame of deliberate fuzziness, determine multiple nonuniformity correction item, and

Nonuniformity correction item is applied to picture frame, to remove noise from picture frame.