CN205212510U - Intelligence data line - Google Patents
Intelligence data line Download PDFInfo
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- CN205212510U CN205212510U CN201521083290.7U CN201521083290U CN205212510U CN 205212510 U CN205212510 U CN 205212510U CN 201521083290 U CN201521083290 U CN 201521083290U CN 205212510 U CN205212510 U CN 205212510U
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Abstract
The utility model provides an intelligence data line can provide full electric power -off protection, overcurrent power -off protection, overvoltage power -off protection to rechargeable devices.
Description
Technical field
The present invention relates to field of data transmission, more specifically, relate to a kind of intelligent data line.
Background technology
In prior art, data wire popularization and application is to the every field in life, and such as, people's usage data line charges etc. to various smart machine.But; existing data wire often only has simple charge function and data-transformation facility; do not consider the protection of charging equipment in charging process, such as full electric power-off protection, overcurrent power-off protection or overvoltage power-off protection etc., thus can't meet the requirement of people.
Summary of the invention
The present invention is at least one defect solving above prior art, provides a kind of intelligent data line, and this intelligent data line when charging equipment full electricity, can cut off charging circuit, avoid overcharging and produce destruction to charging equipment internal circuit.
For realizing above goal of the invention, the technical scheme of employing is:
A kind of intelligent data line, comprises a charging protecting module;
Described charging protecting module comprises p-type power field effect pipe MOS1, N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3, diode D1, electric capacity C1, resistance R1, resistance R3, resistance R4, resistance R5, resistance R6, electric capacity C4, digit chip LM358, LED 1, diode D3, LED 2;
Wherein the S pole of p-type power field effect pipe MOS1 is connected with power supply positive input terminal A, the G pole of p-type power field effect pipe MOS1 is connected with data communication data terminal C, and the D pole of p-type power field effect pipe MOS1 is connected with the feeder ear of the anode of diode D1, digit chip LM358, the anode of LED 1;
The negative electrode of diode D1 is connected with power-input B by resistance R3, resistance R4, resistance R5; One end of electric capacity C1 is connected with the negative electrode of diode D1, and the other end of electric capacity C1 is connected with power-input B; One end of electric capacity C4 is connected with the negative electrode of diode D1, and the other end of electric capacity C4 is connected with 3 pin of digit chip LM358; Power-input B is connected with power-output B1 by resistance R1, and power-output B1 is connected with 3 pin of digit chip LM358 by resistance R6;
2 pin of digit chip LM358 are connected with one end of resistance R4, resistance R5;
1 pin of digit chip LM358 is connected with the anode of the negative electrode of LED 1, diode D3, the anode of LED 2; The negative electrode of diode D3 is connected with the G pole of N-shaped power field effect pipe MOS2; The negative electrode of LED 2 is connected with power-output B1;
The S pole of N-shaped power field effect pipe MOS2 is connected with power-output B1, and the D pole of N-shaped power field effect pipe MOS2 is connected with the G pole of power supply positive input terminal A, p-type power field effect pipe MOS3;
The S pole of p-type power field effect pipe MOS3 is connected with power supply positive input terminal A, and its D pole is connected with power supply positive output end A1.
Its concrete course of work is as follows:
Power supply positive input terminal A, power-input B connect 5V power supply, when connecting the charging equipments such as mobile phone again, C pin due to charging equipment is low level, the G pin level of p-type power field effect pipe MOS1 is dragged down, p-type power field effect pipe MOS1 conducting exports three tunnels, diode D1 is delivered on one tunnel, and the feeder ear of digit chip LM358 is sent on a road, and LED 1 is sent on a road;
Power supply forms sample rate current after resistance R3, resistance R4, and by the concrete transfer of data of sample rate current to 2 pin of digit chip LM358; After p-type power field effect pipe MOS1 conducting, electric capacity C4 can charge in wink, make the level of level higher than 2 pin of digit chip LM3583 pin, now digit chip LM3581 pin can export high level, make N-shaped power field effect pipe MOS2 conducting, the G very low level of p-type power field effect pipe MOS3, make p-type power field effect pipe MOS3 conducting, LED 2 is shinny, and power supply charges to charging equipment.
When after charging equipment charging complete, the sample rate current flowing through resistance R1 is less than the sample rate current of resistance R3, resistance R4, the level of digit chip LM3583 pin is less than the level of digit chip LM3582 pin, now digit chip LM3581 pin output low level, N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3 disconnect, LED 1 is shinny, and power supply stops, to charging equipment charging, preventing charging equipment from overcharging.
Preferably; described charging protecting module also includes p-type power field effect pipe MOS4; the G pole of p-type power field effect pipe MOS4 is connected with the G pole of p-type power field effect pipe MOS3; the S pole of p-type power field effect pipe MOS4 is connected with power supply positive input terminal A, and the D pole of p-type power field effect pipe MOS4 is connected with power supply positive output end A1.P-type power field effect pipe MOS4, p-type power field effect pipe MOS3 Parallel opertation, can effectively reduce conduction impedance.
Preferably, described charging protecting module also includes resistance R12 and electric capacity C3, and one end of resistance R12, electric capacity C3 is connected with the G pole of N-shaped power field effect pipe MOS2, and the other end of resistance R12, electric capacity C3 is connected with power-output B1.Set up resistance R12 and electric capacity C3, for stopping at power supply after charging equipment charging, C3 can play the effect of time delay, after mobile phone is stable, just closes N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3.
When data wire is for transmitting data; C pin is by generation variation level; circuit cannot be stablized; in order to overcome this situation; described charging protecting module also includes resistance R2, electric capacity C5; one end of resistance R2, electric capacity C5 is connected with the G pole of p-type power field effect pipe MOS1, and the other end of resistance R2, electric capacity C5 is connected with power supply positive input terminal A.Above-mentioned setting can make circuit stability run.
Due in the process of usage data line, due to the instability of supply voltage, electric current, easily damage is caused to the circuit of charging equipment inside, in order to solve this technical barrier, described charging protecting module also includes NPN type triode VT, diode D2, voltage stabilizing didoe ZD and resistance R8, wherein the B pole of NPN type triode VT is connected with the anode of voltage stabilizing didoe ZD, the negative electrode of diode D2, and the B pole of NPN type triode VT is connected with power-output B1 by resistance R8; The E pole of NPN type triode VT is connected with power-output B1, and the C pole of NPN type triode VT is connected with the negative electrode of diode D3;
The anode of diode D2 is connected with 7 pin of digit chip LM358, and the negative electrode of voltage stabilizing didoe ZD is connected with the D pole of p-type power field effect pipe MOS1;
6 pin of digit chip LM358 are connected with one end of resistance R3, resistance R4, and 5 pin of digit chip LM358 are connected with power-output B1.
6 pin of digit chip LM358 are connected with resistance R3, resistance R4, for gathering an over current value to digit chip LM358, and 5 pin of digit chip LM358 are connected with power-output B1, then for gathering source current and it being transferred to 5 pin of digit chip LM358; When electric current in mobile phone charging process is excessive or output short circuit time; flow through the set point of electric current higher than resistance R4 of resistance R1; LM3585 pin level is higher than 6 pin; 7 pin will export high level, and through diode D2, resistance R7 makes NPN type triode VT conducting; make the G very low level of N-shaped power field effect pipe MOS2; close N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3, disconnect cellular phone power supplies, play overcurrent power-off protection.
When in charging process, supply voltage is too high, NPN type triode VT conducting will be made through voltage stabilizing didoe ZD, resistance R7, and close N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3, disconnect cellular phone power supplies, play overvoltage power-off protection.
Preferably, described charging protecting module also includes electric capacity C2, resistance R7, and wherein the B pole of NPN type triode VT is connected with the anode of voltage stabilizing didoe ZD, the negative electrode of diode D2 by resistance R7; One end of electric capacity C2 is connected with the negative electrode of the anode of voltage stabilizing didoe ZD, diode D2, and the other end is connected with power-output B1.
Preferably, described charging protecting module also includes resistance R9, and the anode of LED 1 is connected with the D pole of p-type power field effect pipe MOS1 by resistance R9.
Preferably, described charging protecting module also includes resistance R10, and 1 pin of digit chip LM358 is connected with the anode of diode D3, the anode of LED 2 by resistance R10.
Preferably, described charging protecting module also includes resistance R11, and the negative electrode of described LED 2 is connected with power-output B1 by resistance R11.
Preferably; described charging protecting module also includes resistance R13, resistance R14; wherein power supply positive input terminal A is connected with the G pole of p-type power field effect pipe MOS3 by resistance R13, and the G pole of p-type power field effect pipe MOS3 is connected with the D pole of N-shaped power field effect pipe MOS2 by resistance R14.
Compared with prior art, the invention has the beneficial effects as follows:
Intelligent data line provided by the invention, can provide full electric power-off protection, overcurrent power-off protection, overvoltage power-off protection to charging equipment.
Accompanying drawing explanation
Fig. 1 is the structural representation of charging protecting module.
Fig. 2 is the pin schematic diagram of digit chip LM358.
Embodiment
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent;
Below in conjunction with drawings and Examples, the present invention is further elaborated.
As shown in Figure 1, 2, the model of element shown in figure and parameter as follows:
Embodiment 1
As shown in Figure 1, 2, charging protecting module comprises p-type power field effect pipe MOS1, N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3, diode D1, electric capacity C1, resistance R1, resistance R3, resistance R4, resistance R5, resistance R6, electric capacity C4, digit chip LM358, LED 1, diode D3, LED 2;
Wherein the S pole of p-type power field effect pipe MOS1 is connected with power supply positive input terminal A, the G pole of p-type power field effect pipe MOS1 is connected with data communication data terminal C, and the D pole of p-type power field effect pipe MOS1 is connected with the feeder ear of the anode of diode D1, digit chip LM358, the anode of LED 1;
The negative electrode of diode D1 is connected with power-input B by resistance R3, resistance R4, resistance R5; One end of electric capacity C1 is connected with the negative electrode of diode D1, and the other end of electric capacity C1 is connected with power-input B; One end of electric capacity C4 is connected with the negative electrode of diode D1, and the other end of electric capacity C4 is connected with 3 pin of digit chip LM358; Power-input B is connected with power-output B1 by resistance R1, and power-output B1 is connected with 3 pin of digit chip LM358 by resistance R6;
2 pin of digit chip LM358 are connected with one end of resistance R4, resistance R5;
1 pin of digit chip LM358 is connected with the anode of the negative electrode of LED 1, diode D3, the anode of LED 2; The negative electrode of diode D3 is connected with the G pole of N-shaped power field effect pipe MOS2; The negative electrode of LED 2 is connected with power-output B1;
The S pole of N-shaped power field effect pipe MOS2 is connected with power-output B1, and the D pole of N-shaped power field effect pipe MOS2 is connected with the G pole of power supply positive input terminal A, p-type power field effect pipe MOS3;
The S pole of p-type power field effect pipe MOS3 is connected with power supply positive input terminal A, and its D pole is connected with power supply positive output end A1.
Its concrete course of work is as follows:
Power supply positive input terminal A, power-input B connect 5V power supply, when connecting the charging equipments such as mobile phone again, C pin due to charging equipment is low level, the G pin level of p-type power field effect pipe MOS1 is dragged down, p-type power field effect pipe MOS1 conducting exports three tunnels, diode D1 is delivered on one tunnel, and the feeder ear of digit chip LM358 is sent on a road, and LED 1 is sent on a road;
Power supply forms sample rate current after resistance R3, resistance R4, and by the concrete transfer of data of sample rate current to 2 pin of digit chip LM358; After p-type power field effect pipe MOS1 conducting, electric capacity C4 can charge in wink, make the level of level higher than 2 pin of digit chip LM3583 pin, now digit chip LM3581 pin can export high level, make N-shaped power field effect pipe MOS2 conducting, the G very low level of p-type power field effect pipe MOS3, make p-type power field effect pipe MOS3 conducting, LED 2 is shinny, and power supply charges to charging equipment.
When after charging equipment charging complete, the sample rate current flowing through resistance R1 is less than resistance R3, the sample rate current of resistance R4, the level of digit chip LM3583 pin is less than the level of digit chip LM3582 pin, now digit chip LM3581 pin output low level, N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3 disconnect, and LED 1 is shinny, power supply stops, to charging equipment charging, preventing charging equipment from overcharging.
In the present embodiment; charging protecting module also includes p-type power field effect pipe MOS4; the G pole of p-type power field effect pipe MOS4 is connected with the G pole of p-type power field effect pipe MOS3; the S pole of p-type power field effect pipe MOS4 is connected with power supply positive input terminal A, and the D pole of p-type power field effect pipe MOS4 is connected with power supply positive output end A1.P-type power field effect pipe MOS4, p-type power field effect pipe MOS3 Parallel opertation, can effectively reduce conduction impedance.
In the present embodiment, charging protecting module also includes resistance R12 and electric capacity C3, and one end of resistance R12, electric capacity C3 is connected with the G pole of N-shaped power field effect pipe MOS2, and the other end of resistance R12, electric capacity C3 is connected with power-output B1.Set up resistance R12 and electric capacity C3, for stopping at power supply after charging equipment charging, C3 can play the effect of time delay, after mobile phone is stable, just closes N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3.
When data wire is for transmitting data; C pin is by generation variation level; circuit cannot be stablized; in order to overcome this situation; described charging protecting module also includes resistance R2, electric capacity C5; one end of resistance R2, electric capacity C5 is connected with the G pole of p-type power field effect pipe MOS1, and the other end of resistance R2, electric capacity C5 is connected with power supply positive input terminal A.Above-mentioned setting can make circuit stability run.
In the present embodiment, due in the process of usage data line, due to the instability of supply voltage, electric current, easily damage is caused to the circuit of charging equipment inside, the present invention is in order to solve this technical barrier, described charging protecting module also includes NPN type triode VT, diode D2, voltage stabilizing didoe ZD and resistance R8, wherein the B pole of NPN type triode VT is connected with the anode of voltage stabilizing didoe ZD, the negative electrode of diode D2, and the B pole of NPN type triode VT is connected with power-output B1 by resistance R8; The E pole of NPN type triode VT is connected with power-output B1, and the C pole of NPN type triode VT is connected with the negative electrode of diode D3;
The anode of diode D2 is connected with 7 pin of digit chip LM358, and the negative electrode of voltage stabilizing didoe ZD is connected with the D pole of p-type power field effect pipe MOS1;
6 pin of digit chip LM358 are connected with one end of resistance R3, resistance R4, and 5 pin of digit chip LM358 are connected with power-output B1.
6 pin of digit chip LM358 are connected with resistance R3, resistance R4, for gathering an over current value to digit chip LM358, and 5 pin of digit chip LM358 are connected with power-output B1, then for gathering source current and it being transferred to 5 pin of digit chip LM358; When electric current in mobile phone charging process is excessive or output short circuit time; flow through the set point of electric current higher than resistance R4 of resistance R1; LM3585 pin level is higher than 6 pin; 7 pin will export high level, and through diode D2, resistance R7 makes NPN type triode VT conducting; make the G very low level of N-shaped power field effect pipe MOS2; close N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3, disconnect cellular phone power supplies, play overcurrent power-off protection.
When in charging process, supply voltage is too high, NPN type triode VT conducting will be made through voltage stabilizing didoe ZD, resistance R7, and close N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3, disconnect cellular phone power supplies, play overvoltage power-off protection.
In the present embodiment, described charging protecting module also includes electric capacity C2, resistance R7, and wherein the B pole of NPN type triode VT is connected with the anode of voltage stabilizing didoe ZD, the negative electrode of diode D2 by resistance R7; One end of electric capacity C2 is connected with the negative electrode of the anode of voltage stabilizing didoe ZD, diode D2, and the other end is connected with power-output B1.
In the present embodiment, described charging protecting module also includes resistance R9, and the anode of LED 1 is connected with the D pole of p-type power field effect pipe MOS1 by resistance R9.
In the present embodiment, charging protecting module also includes resistance R10, and 1 pin of digit chip LM358 is connected with the anode of diode D3, the anode of LED 2 by resistance R10.
In the present embodiment, charging protecting module also includes resistance R11, and the negative electrode of described LED 2 is connected with power-output B1 by resistance R11.
In the present embodiment; described charging protecting module also includes resistance R13, resistance R14; wherein power supply positive input terminal A is connected with the G pole of p-type power field effect pipe MOS3 by resistance R13, and the G pole of p-type power field effect pipe MOS3 is connected with the D pole of N-shaped power field effect pipe MOS2 by resistance R14.
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.All any amendments done within the spirit and principles in the present invention, equivalent to replace and improvement etc., within the protection range that all should be included in the claims in the present invention.
Claims (10)
1. an intelligent data line, is characterized in that: comprise a charging protecting module;
Described charging protecting module comprises p-type power field effect pipe MOS1, N-shaped power field effect pipe MOS2, p-type power field effect pipe MOS3, diode D1, electric capacity C1, resistance R1, resistance R3, resistance R4, resistance R5, resistance R6, electric capacity C4, digit chip LM358, LED 1, diode D3, LED 2;
Wherein the S pole of p-type power field effect pipe MOS1 is connected with power supply positive input terminal A, the G pole of p-type power field effect pipe MOS1 is connected with data communication data terminal C, and the D pole of p-type power field effect pipe MOS1 is connected with the feeder ear of the anode of diode D1, digit chip LM358, the anode of LED 1;
The negative electrode of diode D1 is connected with power-input B by resistance R3, resistance R4, resistance R5; One end of electric capacity C1 is connected with the negative electrode of diode D1, and the other end of electric capacity C1 is connected with power-input B; One end of electric capacity C4 is connected with the negative electrode of diode D1, and the other end of electric capacity C4 is connected with 3 pin of digit chip LM358; Power-input B is connected with power-output B1 by resistance R1, and power-output B1 is connected with 3 pin of digit chip LM358 by resistance R6;
2 pin of digit chip LM358 are connected with one end of resistance R4, resistance R5;
1 pin of digit chip LM358 is connected with the anode of the negative electrode of LED 1, diode D3, the anode of LED 2; The negative electrode of diode D3 is connected with the G pole of N-shaped power field effect pipe MOS2; The negative electrode of LED 2 is connected with power-output B1;
The S pole of N-shaped power field effect pipe MOS2 is connected with power-output B1, and the D pole of N-shaped power field effect pipe MOS2 is connected with the G pole of power supply positive input terminal A, p-type power field effect pipe MOS3;
The S pole of p-type power field effect pipe MOS3 is connected with power supply positive input terminal A, and its D pole is connected with power supply positive output end A1.
2. intelligent data line according to claim 1; it is characterized in that: described charging protecting module also includes p-type power field effect pipe MOS4; the G pole of p-type power field effect pipe MOS4 is connected with the G pole of p-type power field effect pipe MOS3; the S pole of p-type power field effect pipe MOS4 is connected with power supply positive input terminal A, and the D pole of p-type power field effect pipe MOS4 is connected with power supply positive output end A1.
3. intelligent data line according to claim 2; it is characterized in that: described charging protecting module also includes resistance R12 and electric capacity C3; one end of resistance R12, electric capacity C3 is connected with the G pole of N-shaped power field effect pipe MOS2, and the other end of resistance R12, electric capacity C3 is connected with power-output B1.
4. intelligent data line according to claim 3; it is characterized in that: described charging protecting module also includes resistance R2, electric capacity C5; one end of resistance R2, electric capacity C5 is connected with the G pole of p-type power field effect pipe MOS1, and the other end of resistance R2, electric capacity C5 is connected with power supply positive input terminal A.
5. the intelligent data line according to any one of claim 1 ~ 4, it is characterized in that: described charging protecting module also includes NPN type triode VT, diode D2, voltage stabilizing didoe ZD and resistance R8, wherein the B pole of NPN type triode VT is connected with the anode of voltage stabilizing didoe ZD, the negative electrode of diode D2, and the B pole of NPN type triode VT is connected with power-output B1 by resistance R8; The E pole of NPN type triode VT is connected with power-output B1, and the C pole of NPN type triode VT is connected with the negative electrode of diode D3;
The anode of diode D2 is connected with 7 pin of digit chip LM358, and the negative electrode of voltage stabilizing didoe ZD is connected with the D pole of p-type power field effect pipe MOS1;
6 pin of digit chip LM358 are connected with one end of resistance R3, resistance R4, and 5 pin of digit chip LM358 are connected with power-output B1.
6. intelligent data line according to claim 5, is characterized in that: described charging protecting module also includes electric capacity C2, resistance R7, and wherein the B pole of NPN type triode VT is connected with the anode of voltage stabilizing didoe ZD, the negative electrode of diode D2 by resistance R7;
One end of electric capacity C2 is connected with the negative electrode of the anode of voltage stabilizing didoe ZD, diode D2, and the other end is connected with power-output B1.
7. intelligent data line according to claim 5, is characterized in that: described charging protecting module also includes resistance R9, and the anode of LED 1 is connected with the D pole of p-type power field effect pipe MOS1 by resistance R9.
8. intelligent data line according to claim 5, is characterized in that: described charging protecting module also includes resistance R10, and 1 pin of digit chip LM358 is connected with the anode of diode D3, the anode of LED 2 by resistance R10.
9. intelligent data line according to claim 5, is characterized in that: described charging protecting module also includes resistance R11, and the negative electrode of described LED 2 is connected with power-output B1 by resistance R11.
10. intelligent data line according to claim 5; it is characterized in that: described charging protecting module also includes resistance R13, resistance R14; wherein power supply positive input terminal A is connected with the G pole of p-type power field effect pipe MOS3 by resistance R13, and the G pole of p-type power field effect pipe MOS3 is connected with the D pole of N-shaped power field effect pipe MOS2 by resistance R14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521083290.7U CN205212510U (en) | 2015-12-21 | 2015-12-21 | Intelligence data line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521083290.7U CN205212510U (en) | 2015-12-21 | 2015-12-21 | Intelligence data line |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205212510U true CN205212510U (en) | 2016-05-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521083290.7U Expired - Fee Related CN205212510U (en) | 2015-12-21 | 2015-12-21 | Intelligence data line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205212510U (en) |
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2015
- 2015-12-21 CN CN201521083290.7U patent/CN205212510U/en not_active Expired - Fee Related
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