CN205177810U - Novel full metal casing encapsulation thyristor - Google Patents
Novel full metal casing encapsulation thyristor Download PDFInfo
- Publication number
- CN205177810U CN205177810U CN201520942721.4U CN201520942721U CN205177810U CN 205177810 U CN205177810 U CN 205177810U CN 201520942721 U CN201520942721 U CN 201520942721U CN 205177810 U CN205177810 U CN 205177810U
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- chip
- thyristor
- encapsulation
- full metal
- cathode plane
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Abstract
The utility model discloses a novel full metal casing encapsulation thyristor, including insulating lasso, the anode surface conducting block, chip and emission surface shell, the chip is by the aluminum sheet, behind the silicon chip sinter molding chip emission surface once more sintering graphite alkene conducting material make, insulating lasso dustcoat emission surface shell, between anode surface conducting block and the emission surface shell for the clearance space graphite alkene compound inslation glue fill the encapsulation keep apart, the chip anode surface is connected to the anode surface conducting block, the emission surface shell is connected to the chip emission surface, the on chip is equipped with the four layers PN junction, the PN junction is through the photoetching, technologies such as corruption are made. Compared with the prior art, the utility model discloses a full metal casing encapsulation, the thermal diffusivity improves more than 10%. The manufacture craft is simpler, and life is longer, and the performance is higher and high voltage resistance is stronger.
Description
Technical field
The utility model relates to thyristor technical field, is specifically related to a kind of novel high-power full metal jacket encapsulation thyristor.
Background technology
High-power thyristor, as a kind of electronic component of switching mode, can use in the occasion of high-voltage large current.Current high-power thyristor has been widely used in the fields such as direct current transportation, intelligent grid, power converter, noncontacting switch, and have a extensive future, development space is huge.Because high-power thyristor itself has certain pressure drop, therefore can there is certain loss when the current flows, electric current is larger, and loss is larger.When high-power thyristor chip produces loss, the temperature of device can increase, and temperature rising can produce adverse influence to the characteristic of device.And when temperature exceeds certain value, device will lose efficacy.Therefore, when high-power thyristor uses, by strengthen the heat radiation of its element internal good outside, more additional air-cooled or water-filled radiator to be taken away by its heat be more common and effective method at present.
The electric semiconductor radiator of prior art has multiple.Can be divided into air-cooled and water-cooled two kinds from cooling means point, air-cooled radiator generally has aluminium section bar and heat-pipe radiator, operationally generally needs gas-distributing fan, and volume is larger.Water-filled radiator is generally used for the larger occasion of power, small volume, and heat radiation power is higher, many series connection can use, but needs to configure cooling system.Such as in HVDC direct current transportation, all use water-cooling heat radiating system.
The design of existing radiator and technique are comparatively ripe, but the radiator of prior art and high-power thyristor are all separately designs.Radiator and high-power thyristor are all independent individualities in use, by the fastening mode of mechanical press mounting, two radiators are crimped on respectively anode surface and the cathode plane of thyristor.The current thyristor in market be continue to use 60, production technology that the seventies introduces: ceramic insulation adds copper billet conduction sintering and forms, heat dispersion is not good, and after improving, adopt full metal jacket to add up-to-date Graphene insulating material, improve the heat dispersion of high-power thyristor greatly, radiating effect is than front raising more than 10% after tested.
Utility model content
The purpose of this utility model is to provide a kind of high-power thyristor device self-radiating better, makes simpler, longer service life, the higher and novel high-power thyristor that withstand voltage properties is stronger of performance.
For achieving the above object, the utility model provides following technical scheme:
A kind of novel full metal jacket encapsulation thyristor, comprise insulating ferrule, anode surface conducting block, chip and cathode plane shell, insulating ferrule outer cover cathode plane shell, between anode surface conducting block and cathode plane shell, isolated insulation is carried out in clearance space Graphene compound inslation glue perfusion encapsulation, anode surface conducting block connects chip anode face, chip cathode plane connects cathode plane shell, and be provided with four layers of PN junction in thyristor chip, PN junction is made by the technique such as photoetching, corrosion.
As the further improvement of above-mentioned technology, described insulating ferrule is loop configuration.
As the further improvement of above-mentioned technology, described thyristor chip four layers of PN junction material all adopt silicon materials.
As the further improvement of above-mentioned technology, described chip by chip cathode plane after molybdenum sheet, silicon chip sinter molding again sintering graphite alkene electric conducting material make.
As the further improvement of above-mentioned technology, between described anode surface conducting block and cathode plane shell, isolated insulation is carried out in clearance space Graphene compound inslation glue perfusion encapsulation.
Compared with prior art, the beneficial effects of the utility model are: thermal diffusivity improves more than 10%, and make simpler, longer service life, performance is higher and withstand voltage properties is stronger.
Accompanying drawing explanation
Fig. 1 is the structural representation of insulating ferrule.
Fig. 2 is the structural representation of anode surface conducting block.
Fig. 3 is the structural representation of chip.
Fig. 4 is the vertical view of cathode plane shell.
Fig. 5 is the front view of cathode plane shell.
Fig. 6 is the structural blast figure of this practical sexual type.
In figure: 1-insulating ferrule, 2-anode surface conducting block, 3-chip, 4-cathode plane shell.
Embodiment
Be described in more detail below in conjunction with the technical scheme of embodiment to this patent.
A kind of novel full metal jacket encapsulation thyristor, comprise insulating ferrule 1, anode surface conducting block 2, chip 3 and cathode plane shell 4, insulating ferrule 1 is loop configuration, insulating ferrule 1 outer cover cathode plane shell 4, between anode surface conducting block 4 and cathode plane shell 1 clearance space Graphene compound inslation glue perfusion encapsulation isolate the two poles of the earth, anode surface conducting block 2 connects chip 3 anode surface, chip 3 cathode plane connects cathode plane shell 4, be provided with four layers of PN junction in chip 3, PN junction is made by the technique such as photoetching, corrosion.
The utility model IF-FRE is 2000-4000-8000/ switch second, and insulating ferrule 1 adopts Graphene composite insulating material, and PN junction all adopts silicon materials to make, thermal diffusivity is better, make simpler, longer service life, performance is higher and withstand voltage properties is stronger.
The foregoing is only the utility model preferred embodiment; not thereby execution mode of the present utility model and protection range is limited; to those skilled in the art; the equivalent replacement that all utilization the utility model specifications and diagramatic content are made and the scheme that apparent change obtains should be recognized, all should be included in protection range of the present utility model.
Claims (5)
1. a novel full metal jacket encapsulation thyristor, comprise insulating ferrule, anode surface conducting block, chip and cathode plane shell, it is characterized in that, insulating ferrule outer cover cathode plane shell, between anode surface conducting block and cathode plane shell, clearance space Graphene compound inslation glue perfusion encapsulation is isolated, and anode surface conducting block connects chip anode face, and chip cathode plane connects cathode plane shell, be provided with four layers of PN junction in chip, PN junction is made by photoetching and etching process.
2. one according to claim 1 novel full metal jacket encapsulation thyristor, it is characterized in that, described insulating ferrule is loop configuration.
3. one according to claim 1 novel full metal jacket encapsulation thyristor, it is characterized in that, described four layers of PN junction material all adopt silicon materials.
4. one according to claim 1 novel full metal jacket encapsulation thyristor, is characterized in that, described chip by chip cathode plane after molybdenum sheet, silicon chip sinter molding again sintering graphite alkene electric conducting material make.
5. one according to claim 1 novel full metal jacket encapsulation thyristor, is characterized in that, between described anode surface conducting block and cathode plane shell, isolated insulation is carried out in clearance space Graphene compound inslation glue perfusion encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520942721.4U CN205177810U (en) | 2015-11-19 | 2015-11-19 | Novel full metal casing encapsulation thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520942721.4U CN205177810U (en) | 2015-11-19 | 2015-11-19 | Novel full metal casing encapsulation thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205177810U true CN205177810U (en) | 2016-04-20 |
Family
ID=55741761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520942721.4U Expired - Fee Related CN205177810U (en) | 2015-11-19 | 2015-11-19 | Novel full metal casing encapsulation thyristor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205177810U (en) |
-
2015
- 2015-11-19 CN CN201520942721.4U patent/CN205177810U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 Termination date: 20201119 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |