CN205167272U - Curved sapphire forming die of mechanical type heat - Google Patents

Curved sapphire forming die of mechanical type heat Download PDF

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Publication number
CN205167272U
CN205167272U CN201520947792.3U CN201520947792U CN205167272U CN 205167272 U CN205167272 U CN 205167272U CN 201520947792 U CN201520947792 U CN 201520947792U CN 205167272 U CN205167272 U CN 205167272U
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China
Prior art keywords
hot bending
sapphire
mould
wafer
curved
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Active
Application number
CN201520947792.3U
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Chinese (zh)
Inventor
左洪波
杨鑫宏
张学军
袁志勇
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Harbin Aurora Optoelectronics Technology Co Ltd
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Harbin Aurora Optoelectronics Technology Co Ltd
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Priority to CN201520947792.3U priority Critical patent/CN205167272U/en
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Abstract

The utility model provides a curved sapphire shaping grinding apparatus of mechanical type heat. Fixing a position the wafer on the curved mould of two parts matched with heat from top to bottom, then arranging in in the middle of the heating furnace, speed with 30 DEG C ~300 DEG C of h heaies up, heats sapphire wafer to certain 1360 DEG C ~1920 DEG C, and it makes the wafer produce the bending deformation to conduct oneself with dignity through the curved mould upper portion mould of heat, becomes the shape that the mould was injectd, after the curved surface shaping, normal position annealing, the thermal stress is eliminated in slow cooling. The utility model discloses can overcome shortcomings such as traditional sapphire material curved surface processing technology degree of difficulty is big, the yield low, material loss is big, can replace complicated curved surface course of working, process is simple, and production efficiency is high, and the cost of manufacture is low.

Description

A kind of mechanical type hot bending sapphire mould
(1) technical field
The utility model relates to a kind of curved surface sapphire wafer forming technique, is specifically related to a kind of mechanical type hot bending sapphire mould.
(2) background technology
Sapphire single-crystal has Good All-around Property, is the preferred material of blue light GaN epitaxy substrate in current LED market.Along with the progress of Sapphire Crystal Growth and process technology, the production cost of sapphire product constantly reduces, and this makes sapphire widespread adoption in consumer electronics and other consumer product become possibility.The expansion of application, product is more diversified, certainly will have more, higher requirement by bringing to the size of following sapphire product and shape.Wherein, curved surface sapphire screen is also one of direction of future development.But be hard brittle material under sapphire normal temperature, Machining of Curved Surface is not only more difficult in technique, and yield rate is low, and spillage of material is also larger.
Heat-bending glass is flat glass thermoplastic, shaping in a mold, the more annealed bend glass made.At present, heat-bending glass gets more and more in the use of occasions such as building, civilian.Although sapphire is fragility, at a certain temperature will deliquescing, demonstrate certain plasticity, and then can plastic bending be carried out.After this crystallization, the bending malformation caused is little to microdefect variable effect.
(3) summary of the invention
The purpose of this utility model is to provide a kind of mechanical type hot bending sapphire mould that can overcome the shortcomings such as traditional sapphire material Machining of Curved Surface technology difficulty is large, yield rate is low, spillage of material is large.
The purpose of this utility model is achieved in that it is female mould cover group, comprise hot bending die patrix and hot bending die bed die, sapphire wafer is positioned on hot bending die bed die, there is identical bent angle on hot bending die patrix and hot bending die bed die both sides, hot bending die bed die is provided with wafer orientation post, and hot bending die patrix correspondence position has the locating hole structure matched with locating dowel.
The utility model also has some features like this:
1, described sapphire wafer thickness is 0.2 ~ 4mm.
2, described female mould cover group comprises at least one group of hot bending die patrix and hot bending die bed die.
3, described hot bending die is W, Mo or W-Mo alloy material.
Hot bending die when the utility model uses, wafer matched at upper and lower two parts is located, is then placed in the middle of heating furnace; With the ramp of 30 DEG C ~ 300 DEG C/h, sapphire wafer is heated to certain 1360 DEG C ~ 1920 DEG C, makes wafer produce flexural deformation by the deadweight of hot bending die upper die, become the shape that mould limits; After curved surface forming, in-situ annealing, slow cooling, eliminates thermal stress.
The beneficial effects of the utility model have:
1, adopt Thermal sapphire bending process to make curved surface, can replace complicated Machining of Curved Surface process, technical process is simple, and production efficiency is high, and cost of manufacture is low.
2, sapphire single-crystal belongs to aeolotropic crystal, and the intensity of different crystal orientations is different, according to crystal orientation and the thickness difference of wafer bending angle, wafer, adopt substep, repeatedly progressively shaping to macrobending angle by little angle of bend, inner wafer stress can be effectively reduced, avoid cracking, improve yield rate.
(4) accompanying drawing explanation
Fig. 1 is the utility model structural representation.
(five) detailed description of the invention
Below in conjunction with accompanying drawing, the utility model is described in detail.Fig. 1 is the W-Mo mould structure schematic diagram that the present embodiment adopts, it comprises hot bending die patrix 2, hot bending die bed die 3, there is identical bent angle 6 on hot bending die patrix 2 and hot bending die bed die 3 both sides, sapphire wafer 1 is placed on hot bending die bed die 3, bed die is provided with wafer orientation post 4, hot bending die patrix 2 is provided with the locating hole structure 5 matched with bottom mould postioning post.
The concrete hot bending process route of sapphire wafer is: first, is placed on by sapphire wafer 1 on hot bending die bed die 3, is realized the determination of wafer and mould relative position by wafer orientation post 4; Slowly patrix is placed on sapphire wafer 1 by wafer orientation post 4 and patrix locating hole 5 correspondence position; Mould and wafer are together put in the middle of resistance heated or induction heater; Sapphire wafer, with the ramp of 30 DEG C ~ 300 DEG C/h, is heated to certain 1360 DEG C ~ 1920 DEG C by heating furnace; Make wafer produce flexural deformation by hot bending die patrix 2 deadweight, become the shape that mould limits; After curved surface forming, in-situ annealing, slow cooling, eliminates thermal stress.
The foregoing is only Conventional procedures, consider the impact of the factors such as angle of bend, crystal orientation, wafer thickness, for avoiding the formation of excessive stress, a set of mould with differently curved angle bent angle 6 can be made, take step by step, repeatedly, amount of bow is progressively increased, until bend to required angle by most lower primary school angle of bend.In addition, die width can be made into the several times of required wafer width, puts multi-disc simultaneously, also can multilayer put, and reaches the object of one-shot forming multi-disc.
The utility model set forth a kind of sapphire mechanical thermal roll forming method, on idea basis of the present utility model, allly can all belong to protection domain of the present utility model by similar means to obtain sapphire flexure plane.

Claims (3)

1. a mechanical type hot bending sapphire mould, it is characterized in that it is female mould cover group, comprise hot bending die patrix and hot bending die bed die, sapphire wafer is positioned on hot bending die bed die, there is identical bent angle on hot bending die patrix and hot bending die bed die both sides, hot bending die bed die is provided with wafer orientation post, and hot bending die patrix correspondence position has the locating hole structure matched with locating dowel.
2. according to claim 1a kind of mechanical type hot bending sapphire mould, is characterized in that described sapphire wafer thickness is 0.2 ~ 4mm.
3. according to claim 2a kind of mechanical type hot bending sapphire mould, is characterized in that described female mould cover group comprises at least one group of hot bending die patrix and hot bending die bed die.
CN201520947792.3U 2015-11-25 2015-11-25 Curved sapphire forming die of mechanical type heat Active CN205167272U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520947792.3U CN205167272U (en) 2015-11-25 2015-11-25 Curved sapphire forming die of mechanical type heat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520947792.3U CN205167272U (en) 2015-11-25 2015-11-25 Curved sapphire forming die of mechanical type heat

Publications (1)

Publication Number Publication Date
CN205167272U true CN205167272U (en) 2016-04-20

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Family Applications (1)

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Country Status (1)

Country Link
CN (1) CN205167272U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109702909A (en) * 2019-01-17 2019-05-03 同济大学 A kind of clamping device and production method applied to the production of the spherical surface bent crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109702909A (en) * 2019-01-17 2019-05-03 同济大学 A kind of clamping device and production method applied to the production of the spherical surface bent crystal

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: Curved sapphire forming die of mechanical type heat

Effective date of registration: 20180929

Granted publication date: 20160420

Pledgee: Longjiang bank Limited by Share Ltd Harbin Development Zone sub branch

Pledgor: HARBIN AURORA OPTOELECTRONICS TECHNOLOGY CO., LTD.

Registration number: 2018990000856

PC01 Cancellation of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20200509

Granted publication date: 20160420

Pledgee: Longjiang bank Limited by Share Ltd Harbin Development Zone sub branch

Pledgor: HARBIN AURORA OPTOELECTRONICS TECHNOLOGY Co.,Ltd.

Registration number: 2018990000856