CN205140709U - Three -dimensional film inductor of meter level that declines is buryyed to bottom - Google Patents
Three -dimensional film inductor of meter level that declines is buryyed to bottom Download PDFInfo
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- CN205140709U CN205140709U CN201521020237.2U CN201521020237U CN205140709U CN 205140709 U CN205140709 U CN 205140709U CN 201521020237 U CN201521020237 U CN 201521020237U CN 205140709 U CN205140709 U CN 205140709U
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Abstract
The utility model relates to a three -dimensional film inductor of meter level that declines is buryyed to bottom, the utility model discloses an inductor of formula is buryyed to the bottom, promptly during fabrication, and not direct coating film after end conductor layer photoetching realizes, but adopt the method of sculpture to make the substrate recessed, the recess is buryyed with end conductor layer twill to the coating film again to through control thickness, let the top of end conductor layer twill and substrate remain basically stable. Then plate insulating layer, magnetic core layer, insulating layer, top stripe conductor layer in proper order on this plane. Through pure optical scribing machine, the good three -dimensional film inductor of implementation structure. And reduce the size to the micron order. The plane maintains an equal level with the substrate face on the end conductor layer of assurance growth again simultaneously for thereafter, rete is grown on the horizontal plane. The success avoided the crooked of magnetosphere and each layer in the condition of vertical plane direction part overlap, the structural rete that has reached is clean separation in the vertical direction and all is smooth effects, has reached great duty cycle and inductance value moreover.
Description
Technical field
The utility model relates to a kind of devices field of microelectronics technology, is specifically related to a kind of bottom flush type micron order three-dimension film inductor.
Background technology
Universal along with integrated circuit, electronic devices and components be miniaturizated to a kind of trend.And inductance is an important step of the microminiaturized process of restriction at present.Have both at home and abroad much about the report of miniature inductance, majority is the thin film inductor of 2-dimensional planar type, and the inductance value of these miniature inductances is still lower, can not meet the requirement of most occasion.Thus we still often see and one piece of surface-mounted integrated circuit are placed enamelled wire around referring to the large inductance outside magnet ring.This scene embodies the active demand to the miniature inductance of large inductance value in application.
Three-dimension film inductance, the magnetic flux produced after energising can be greater than the capable thin film inductor of two dimensional surface.Especially film wire is wound around the three-dimension film inductance of magnetic film layer (being similar to enamelled wire outer around magnet), and built-in high permeability magnetic core can amplify magnetic flux, more easily obtains large inductance value.
According to literature survey, the three-dimension film inductance that film wire is wound around magnetic film layer (being similar to enamelled wire outer around magnet) mainly contains following two kinds of preparation methods: (1) adopts the method for photoetching plated film.According to photoetching cover lithography, substrate is prepared multilayer film (sill strip line conductor layer, core layer, top striped conductor layer), them are made to have terrace distribution perpendicular on the direction of substrate plane, two striped conductor layers are interconnected by the both sides of contact in core layer, wound form is wrapped in magnetosphere, forms three-dimension film inductance.This Measures compare is simple, is to prepare microcircuit comparatively to commonly use and the method for maturation.But there is an obvious defect, due to the bar shaped barrier-type undulations of end conductor layer, cause the rete on it to be also wriggle to rise and fall.Rete can not separate completely (see Fig. 1) in the vertical direction.The magnetosphere district of about 1/3 and end conductor layer are same plane, and the magnetosphere district of about 1/3 is same plane with top conductor layer, and conductor layer at the bottom of part and top conductor layer are at same plane.This reduces the duty ratio of area of section folded by film coil and core layer greatly.The structure risen and fallen of simultaneously wriggling makes to there is stress in magnetosphere, can largely affect its soft magnet performance.(2) photoetching plated film is in conjunction with micro-machined method.The method, after growing sill strip line conductor layer, gets rid of a kind of insulation organic colloid, with micro-machined method polishing plane surface after solidification, makes magnetosphere life below at even curface.Then getting rid of this insulation organic colloid, push up striped conductor layer with micro-machined method polishing plane surface in growth after solidification, two conductor layers are connected by the mode of electroplating out electrode column.The rete that the method obtains is be separated completely and be all smooth in vertical direction, reaches and is similar to the outer effect (see Fig. 2) around magnet of enamelled wire.But the method is existing defects too.Can be that technique becomes more complicated in conjunction with micro-machined method, many steps such as polishing, plating be the mainstream machining processes of current microcircuit.More fatal, micro-machined polishing processes has destructive destruction to other devices in level, is also not suitable for the use of large scale integrated circuit.
Utility model content
The technical scheme that the utility model solves the problems of the technologies described above is as follows:
A kind of bottom flush type micron order three-dimension film inductor, comprise substrate, wire bottom, wire top layer and be enclosed with the magnetosphere of insulating barrier, described wire top layer is positioned on described wire bottom, described magnetosphere is between described wire top layer and described wire bottom, described wire bottom and wire top layer are Cr film, Cu film and Cr film superposition composition, described magnetosphere is Cr film, Cu film, FeCuNbSiB film, Cu film and Cr film superposition composition, described wire bottom is imbedded in substrate, and the upper surface of described wire bottom and substrate plane maintain an equal level.
The beneficial effects of the utility model are: the utility model is the inductor of bottom flush type, namely during fabrication, not direct plated film after end conductor layer photoetching realizes, but adopt the method for etching to make substrate recessed, plated film again, end conductor layer twill is imbedded groove, and by controlling thickness, allows the top of end conductor layer twill and substrate remain basically stable.Then insulating barrier, core layer, insulating barrier, top striped conductor layer is plated on this plane successively.By pure photoetching process, the three-dimension film inductor that implementation structure is excellent.And size is reduced to micron order, successfully avoid magnetospheric bending and each layer in the overlapping situation of vertical plane direction part.
Further, described magnetosphere is wrapped up by insulating bottom layer and insulating top layer, and described insulating bottom layer and insulating top layer are wound around parcel by wire bottom and wire top layer by contact docking.
Further, described wire bottom and wire top layer are film twill layer.
Further, described magnetosphere is ring-like run-track shaped.
The beneficial effect of above-mentioned further scheme is adopted to be: to adopt closed loop can reach higher magnetic permeability.
Further, described magnetospheric thickness is 2 to 10 μm.
Accompanying drawing explanation
Fig. 1 is the film inductor that manufactures of common photoetching coating method along film solenoid axially and the schematic cross-section of vertical face;
Fig. 2 film inductor that to be photoetching plated film manufacture in conjunction with micro-machined method along film solenoid axially and the schematic cross-section of vertical face;
Fig. 3 be film inductor of the present utility model along film device solenoid shaft to and the schematic cross-section of vertical face.
Fig. 4 is the utility model wire bottom pattern;
Fig. 5 is the utility model magnetosphere pattern;
Fig. 6 is the utility model insulating layer pattern;
Fig. 7 is the utility model wire top layer pattern;
Fig. 8 is the design sketch of the utility model wire bottom, insulating barrier bottom (corroding), magnetosphere, insulating barrier top layer (corroding), wire top layer.
In accompanying drawing, the list of parts representated by each label is as follows:
1, substrate; 2, the magnetosphere of insulating barrier is enclosed with; 3, wire top layer; 4, wire bottom; 5, solid insulation colloid rete; 6, the first electrode; 7, the second electrode; 8, backup electrode.
Embodiment
Be described principle of the present utility model and feature below in conjunction with accompanying drawing, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
A kind of bottom flush type micron order three-dimension film inductor, comprise substrate, wire bottom, wire top layer and be enclosed with the magnetosphere of insulating barrier, described wire top layer is positioned on described wire bottom, described magnetosphere is between described wire top layer and described wire bottom, described wire bottom is imbedded in substrate, and the upper surface of described wire bottom and substrate plane maintain an equal level.
Described wire bottom and wire top layer are Cr film, Cu film and Cr film superposition composition,
Described magnetosphere is Cr film, Cu film, FeCuNbSiB film, Cu film and Cr film superposition composition.
Described magnetosphere is wrapped up by insulating bottom layer and insulating top layer, and described insulating bottom layer and insulating top layer are wound around parcel by wire bottom and wire top layer by contact docking.
Be film inductor sectional view prepared by two kinds of preparation methods of prior art as shown in Figure 1 and Figure 2, Fig. 3 is film inductor of the present utility model along film solenoid axially and the schematic cross-section of vertical face, as seen from the figure, the utility model achieves the excellent three-dimension film inductor of structure.And size is reduced to micron order.Ensure again that on the end conductor layer that grows, plane and substrate surface maintain an equal level simultaneously, make coating growth thereafter in the horizontal plane.Successfully avoid magnetospheric bending and each layer in the overlapping situation of vertical plane direction part, structure reaching rete is be separated completely and be all smooth effects in vertical direction;
If Fig. 4 is wire bottom pattern, wire bottom is anticlockwise film twill bottom, wire live width 24 μm, and single wire length is 228 μm, and the spacing between every bar wire is 24 μm;
If Fig. 5 is magnetosphere pattern, magnetosphere is ring-like run-track shaped, magnetosphere inner arc radius R1 is 146 μm, outer arc radius R2 is 310 μm, intermediate straight portion length L1 is 975.42 μm, described magnetospheric thickness is 2 to 10 μm, and wherein Cr film thickness is 50nm, Cu film thickness is 100nm.
If Fig. 6 is insulating layer pattern, insulating barrier inner arc radius R3 is 178 μm, and outer arc radius R4 is 278 μm, and intermediate straight portion length L2 is 975.42 μm.
If Fig. 7 is wire top layer, wire bottom is clockwise film twill bottom, wire live width 24 μm, and single wire length is 228 μm, and the spacing between every bar wire is 24 μm.
As the effect that Fig. 8 is wire bottom+insulating barrier bottom (corroding)+magnetosphere+insulating barrier top layer (corroding)+wire top layer.
In experimentation, by the thin film inductor reference examples not adopting bottom flush type method to manufacture, and change SiO respectively
2at the bottom of thickness, wire/top layer thickness, FeCuNbSiB film thickness in magnetosphere and insulation the end/embodiment of top layer thickness contrasts, and measure D.C. resistance respectively and the inductance value that records under high frequency (1MHz-10MHz) contrasts, shown in comparing result sees the following form:
In each embodiment, the size of three-dimension film inductor is 1580 μm × 684 μm × 7 μm, and insulating layer material uses SiO
2, the duty ratio of each embodiment is all about 64.7%, and the thin film inductor duty ratio of the method manufacture not using bottom to imbed only has 20%.
From experiment, the utility model compared with prior art, have following advantage: the utility model film inductor duty ratio obviously increases, the inductance value of acquisition is equivalent parameters but the twice of reference examples do not imbedded by twill bottom, and achieves equal architectural feature; Technique simplifies, and achieves the identical architectural feature of the film inductor that manufactures in conjunction with micro-machined method with photoetching plated film.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (7)
1. a bottom flush type micron order three-dimension film inductor, comprise substrate, wire bottom, wire top layer and be enclosed with the magnetosphere of insulating barrier, described wire top layer is positioned on described wire bottom, described magnetosphere is between described wire top layer and described wire bottom, it is characterized in that: described wire bottom is imbedded in substrate, the upper surface of described wire bottom and substrate plane maintain an equal level.
2. bottom flush type micron order three-dimension film inductor according to claim 1, is characterized in that, described wire bottom and wire top layer be Cr film, Cu film and Cr film superposition composition.
3. bottom flush type micron order three-dimension film inductor according to claim 1, is characterized in that, described magnetosphere is that the superposition of Cr film, Cu film, FeCuNbSiB film, Cu film and Cr film forms.
4. bottom flush type micron order three-dimension film inductor according to claim 1, it is characterized in that, described magnetosphere is wrapped up by insulating bottom layer and insulating top layer, and described insulating bottom layer and insulating top layer are wound around parcel by wire bottom and wire top layer by contact docking.
5. bottom flush type micron order three-dimension film inductor according to claim 1, it is characterized in that, described wire bottom and wire top layer are film twill layer.
6. the bottom flush type micron order three-dimension film inductor according to any one of claim 1 to 5, is characterized in that: described magnetosphere is ring-like run-track shaped.
7. the bottom flush type micron order three-dimension film inductor according to any one of claim 1 to 5, is characterized in that: described magnetospheric thickness is 2 to 10 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521020237.2U CN205140709U (en) | 2015-12-09 | 2015-12-09 | Three -dimensional film inductor of meter level that declines is buryyed to bottom |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521020237.2U CN205140709U (en) | 2015-12-09 | 2015-12-09 | Three -dimensional film inductor of meter level that declines is buryyed to bottom |
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| Publication Number | Publication Date |
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| CN205140709U true CN205140709U (en) | 2016-04-06 |
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| CN201521020237.2U Expired - Fee Related CN205140709U (en) | 2015-12-09 | 2015-12-09 | Three -dimensional film inductor of meter level that declines is buryyed to bottom |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428034A (en) * | 2015-12-09 | 2016-03-23 | 浙江师范大学 | Bottom layer embedded type micron-sized three-dimensional thin-film inductor and manufacturing method thereof |
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2015
- 2015-12-09 CN CN201521020237.2U patent/CN205140709U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428034A (en) * | 2015-12-09 | 2016-03-23 | 浙江师范大学 | Bottom layer embedded type micron-sized three-dimensional thin-film inductor and manufacturing method thereof |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160406 Termination date: 20161209 |
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| CF01 | Termination of patent right due to non-payment of annual fee |