CN205122639U - Integrated packaging structure of perpendicular chip of super large power - Google Patents
Integrated packaging structure of perpendicular chip of super large power Download PDFInfo
- Publication number
- CN205122639U CN205122639U CN201520825589.9U CN201520825589U CN205122639U CN 205122639 U CN205122639 U CN 205122639U CN 201520825589 U CN201520825589 U CN 201520825589U CN 205122639 U CN205122639 U CN 205122639U
- Authority
- CN
- China
- Prior art keywords
- chip
- conductive plate
- tinsel
- encapsulation structure
- integrated encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model belongs to the technical field of semiconductor lighting device and specifically relates to integrated packaging structure of perpendicular chip of super large power. Among this integrated packaging structure, the adoption tinsel is connected between the negative electrode bonding pad of high -power perpendicular chip and the base plate electrode, has realized the heavy current permanent load and the high -termal conductivity ability of chip. Package substrate includes anodal current conducting plate, negative pole current conducting plate and insulating heat transfer layer between the two, between the negative electrode bonding pad and tinsel of perpendicular chip, between tinsel and the negative pole current conducting plate, the chip is anodal with anodal current conducting plate between all adopt eutectics to weld. This packaging structure has replaced gold thread or the aluminum wire of connecting chip negative pole and package substrate negative pole with the tinsel, has solved the difficult problem of heavy current conduction between LED chip and the package substrate, has improved the heat dispersion of encapsulation, has realized reliable high power density encapsulation, can be used to super large power LED ultraviolet, visible and infrared lighting system.
Description
Technical field
The utility model belongs to semiconductor lighting devices technical field, is specifically related to the integrated encapsulation structure of super high power vertical chip.
Background technology
Along with the fast development of LED chip technology of preparing, the power of single chips is in continuous increase, thus facilitate the exploitation of various high-power or high power density LED component and lamp system, expand the application of LED in various general lighting and special lighting and scope.Especially in ultraviolet LED application, the input power of single chips of more than wavelength 365nm increases tens watts from several watts, and develops towards hectowatt grade.
Thin-film LED is the inexorable trend of high-power chip development.The P type of light emitting diode (LED) chip with vertical structure and N-type electrode are respectively in the both sides of LED epitaxial loayer, and electric current almost all flows vertically through LED epitaxial loayer, and therefore current density is large and even, avoids the current crowding problem of planar structure chip.Thin-film LED not only increases radiation efficiency, but also solves the raise problems in terms of light absorption of P-type electrode, and under high power density, its light extraction efficiency can reach 3 times of planar structure LED.
Increasing the power of single chips, is one of method increasing package power density.The electric current of super high power vertical chip reaches tens amperes even higher, often needs to beat many gold threads and be electrically connected when being packaged into device.But gold thread increases, not only increase technique and the technical difficulty of encapsulation, and greatly reduce the reliability of packaging.Luminus company adopts this kind of mode to encapsulate single high-power UV LED chip exactly.The electric current of its single chips is 18A, and the pad of top electrodes is positioned at chip both sides, and every side is each beats gold thread 18.The reliability of this encapsulating structure is very poor, and current density is uneven, and chip very easily burns out, and useful life is very short.CN201410176671.3 proposes a kind of high-power LED integrated packaging structure of high-efficiency heat conduction, improves heat conductivility and the current capacity of module, can realize the LED device of high power density.But be also adopt gold thread as the electrical connection carrier of chip electrode and substrate in this structure, there is the problem of gold thread shunting inequality when chip current is very high equally, limit the further raising of package power density.
Summary of the invention
The purpose of this utility model is to provide a kind of integrated encapsulation structure of super high power vertical chip of good reliability, can realize the high power LED device encapsulation of ten multikilowatts.
The integrated encapsulation structure of the super high power vertical chip that the utility model provides, wherein, the negative terminal pad of great power LED vertical chip with adopt tinsel to carry out alternative gold thread between electrode of substrate to be connected, and the mode that the electrical connection of encapsulating structure all adopts eutectic to weld, achieve big current stable power-supplying and the high thermal conductivity of chip.
The integrated encapsulation structure of the super high power vertical chip that the utility model provides, comprises negative conductive plate, positive conductive plate and thermal insulation layer between the two; Above LED vertical chip, the negative terminal pad of exiting surface is connected with adopting tinsel between negative conductive plate; Positive pole below vertical chip welds with eutectic between positive conductive plate.
The mode that described tinsel all adopts eutectic to weld with LED chip negative terminal pad and negative conductive plate is connected.
Described negative conductive plate, tinsel, insulating barrier and positive conductive plate compress mechanically, guarantee strong shock resistance and the stability of whole encapsulating structure.
On the module adopting this integrated encapsulation structure, LED chip becomes linear array, uses cylindrical lens imaging, by chip light-emitting focused transmission on surface to be irradiated above LED chip.
Adopt the module of this integrated encapsulation structure, its current density can reach 35-350A/cm
2, corresponding voltage is 3.5-5V, and therefore input electric power can up to 120-1500W/cm
2.
In this encapsulating structure, chip bottom electrode and lower conducting plate adopt eutectic to weld, and heat conductivility is superior, and therefore radiation efficiency can reach more than 10%.
This encapsulating structure instead of the gold thread or aluminum steel that connect chip negative pole and base plate for packaging negative pole with tinsel, solve a difficult problem for big current conduction between LED chip and base plate for packaging, improve the heat dispersion of encapsulation, achieve the encapsulation of reliable high power density, can be used for super-high-power LED ultraviolet, visible and infrared illumination system.
Accompanying drawing explanation
Fig. 1 is the assembly drawing of the integrated encapsulation structure of super high power vertical chip of the present utility model.
Fig. 2 is the front view of the integrated encapsulation structure of super high power vertical chip of the present utility model.
Fig. 3 is the vertical view of the integrated encapsulation structure of super high power vertical chip of the present utility model.
Number in the figure: 1-positive conductive plate; 2-insulating barrier; 3-negative conductive plate; 4-ultraviolet LED vertical chip; 5-Copper Foil; 6-insulated bolt; 7-lens.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described further.Described embodiment is only section Example of the present utility model.Do not make other all embodiments of creative achievement based on the embodiment in the utility model, all belong to protection range of the present utility model.
The integrated encapsulation structure of super high power vertical chip of the present utility model, its assembly drawing as shown in Figure 1.The substrate of this encapsulating structure is made up of positive conductive plate 1, insulating barrier 2 and negative conductive plate 3, and insulating barrier 2 and negative conductive plate are slotted, and has the ultraviolet LED vertical chip 4 of three specified association 35W aligned in groove.The P-type electrode of beneath chips is welded with positive conductive plate 1 eutectic, and the N-type electrode above chip is then welded with the front end eutectic of Copper Foil 5.The rear end of Copper Foil 5 is positioned in the middle of insulating barrier 2 and negative conductive plate 3.Whole encapsulating structure adopts insulated bolt to fix, then Copper Foil 5 and negative conductive plate 3 close contact, realize electrical connection.Be packaged with semi-cylindrical lens above encapsulating structure, thus the radiant light sent by chip focuses on required working face.
This encapsulating structure, adopts Copper Foil to substitute gold thread, can increase substantially the current capacity of encapsulating structure.
The conductivity of copper is 5.71 × 10
7s/m is gold (4.17 × 10
7s/m) 1.37 times.The long 2.8mm of chip N pole pad, the copper thickness 0.2mm of wide 0.15mm. eutectic welding, length is consistent with length of bonding pad.As a comparison, during gold thread diameter 0.1mm, singlely can only pass through 1A electric current, electric current then blows more than 1A.To should chip size, one-sidedly make a call to 17 gold threads.
if compare inflow-rate of water turbine according to the area of pad:
One side weld disc area: A
k=0.15 × 2.8=0.42mm
2
One-sided gold thread area: A
au=π × (0.10/2)
2× 17=0.1335mm
2
Area ratio: A
k/ A
au=0.42/0.1335=3.15 doubly
Then inflow-rate of water turbine ratio: I
k/ I
au=3.15 × 1.37=4.32 doubly.
if compare inflow-rate of water turbine according to Copper Foil sectional area
The sectional area of one-sided Copper Foil: A
cu=0.2 × 2.8=0.56mm
2
Inflow-rate of water turbine ratio: I
cu/ I
au=0.56/0.1335 × 1.37=5.75 doubly.
More than calculate and show, adopt the weldering of Copper Foil eutectic by electric current be at least more than 4 times of gold thread.This integrated encapsulation structure has realized monolithic 105A electric current.
In addition, encapsulating structure of the present utility model adopts Copper Foil to connect chip and negative conductive plate, and the heat that chip produces directly can be transmitted to conductive plate by Copper Foil, Copper Foil also naked thermal insulation layer outward.Therefore, the heat conductivility ratio gold thread of encapsulating structure better, the performance of device is also more remarkable.
Claims (4)
1. an integrated encapsulation structure for super high power vertical chip, is characterized in that: the substrate of described encapsulating structure comprises negative conductive plate, positive conductive plate and thermal insulation layer between the two; Above vertical chip, the negative terminal pad of exiting surface is connected with adopting tinsel between negative conductive plate; Positive pole below vertical chip welds with eutectic between positive conductive plate.
2. the integrated encapsulation structure of super high power vertical chip according to claim 1, it is characterized in that: described negative conductive plate, tinsel, insulating barrier and positive conductive plate compress mechanically, guarantee strong shock resistance and the stability of whole encapsulating structure.
3. the integrated encapsulation structure of super high power vertical chip according to claim 1, it is characterized in that: on the module of integrated encapsulation structure, LED chip becomes linear array, cylindrical lens imaging is used, by chip light-emitting focused transmission on surface to be irradiated above LED chip.
4. the integrated encapsulation structure of super high power vertical chip according to claim 1, is characterized in that: the module adopting this integrated encapsulation structure, current density is 35-350A/cm
2, input electric power is 120-1500W/cm
2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520825589.9U CN205122639U (en) | 2015-10-25 | 2015-10-25 | Integrated packaging structure of perpendicular chip of super large power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520825589.9U CN205122639U (en) | 2015-10-25 | 2015-10-25 | Integrated packaging structure of perpendicular chip of super large power |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205122639U true CN205122639U (en) | 2016-03-30 |
Family
ID=55578220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520825589.9U Active CN205122639U (en) | 2015-10-25 | 2015-10-25 | Integrated packaging structure of perpendicular chip of super large power |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205122639U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261693A (en) * | 2015-10-25 | 2016-01-20 | 复旦大学 | Integrated package structure for super power vertical chip |
-
2015
- 2015-10-25 CN CN201520825589.9U patent/CN205122639U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261693A (en) * | 2015-10-25 | 2016-01-20 | 复旦大学 | Integrated package structure for super power vertical chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102025111B (en) | Small-divergence-angle solid laser pumping module encapsulating structure | |
| CN205122639U (en) | Integrated packaging structure of perpendicular chip of super large power | |
| CN201877674U (en) | Small-divergence packaging structure for solid laser pump modules | |
| CN201725809U (en) | LED device | |
| CN201681969U (en) | Low-power LED packaging structure | |
| CN102447221A (en) | Series semiconductor laser | |
| CN204243034U (en) | A kind of LED module | |
| CN105261693A (en) | Integrated package structure for super power vertical chip | |
| CN205430164U (en) | Photovoltaic terminal box and diode | |
| CN202013885U (en) | LED (Light Emitting Diode) integrated packaging device arranged at upper and lower of electrode | |
| CN202268391U (en) | Chip on board (COB) surface light source packaging structure | |
| CN104733602A (en) | Package Structure Of Light Emitting Diode | |
| CN201629332U (en) | Multi-chip LED package radiating structure | |
| CN101982875B (en) | Packaging structure of N substrate diode half bridges with common anodes in TO-220 | |
| CN201363700Y (en) | Radiating structure of LED | |
| CN208874535U (en) | Thermal energy convection heat emission type photovoltaic module | |
| CN205122630U (en) | Full high power density LED chip package structure of establishing ties | |
| CN203983338U (en) | The plug-in electric connection structure of wafer level semiconductor device | |
| CN106206883A (en) | A kind of upside-down mounting high voltage LED chip | |
| CN208090347U (en) | A kind of LED pieces | |
| CN101604688B (en) | High-power LED oscillation package structure | |
| CN201166324Y (en) | Encapsulated circuit using LED chip light fitting | |
| CN203434182U (en) | LED eutectic wafer | |
| CN209744078U (en) | LED lamp bead capable of improving fracture force | |
| CN201994295U (en) | High-antistatic light-emitting diode (LED) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |