CN205118683U - Semiconductor illumination device - Google Patents
Semiconductor illumination device Download PDFInfo
- Publication number
- CN205118683U CN205118683U CN201520852836.4U CN201520852836U CN205118683U CN 205118683 U CN205118683 U CN 205118683U CN 201520852836 U CN201520852836 U CN 201520852836U CN 205118683 U CN205118683 U CN 205118683U
- Authority
- CN
- China
- Prior art keywords
- reflecting surface
- light source
- led light
- illumination device
- shell structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Abstract
The utility model provides a semiconductor illumination device, include: shell structure and LED light source, the LED light source is fixed in shell structure, shell structure includes the plane of reflection, plane of reflection type of being lambert type plane of reflection, the light -emitting direction of LED light source is directional plane of reflection at least partly, the LED light source is in form whole or local even aperture illumination on the plane of reflection, and pass through type lambert type plane of reflection is to the reflection of half space solid angle, obtains luminous soft, all or local brightness uniformity's illuminating effect. The utility model provides a semiconductor illumination device's luminous soft just all or local luminance are more even, and the illuminating effect is good.
Description
Technical field
The utility model relates to a kind of semiconductor illumination device.
Background technology
Light emitting diode (LightEmittingDiode, be abbreviated as LED) owing to having the unique advantages such as high-luminous-efficiency, long-life, environmental protection, good weatherability, become the another core component promoting electronic information technology fast development after integrated circuit (IC), LED industry has become the pillar industry of Chinese national economy.Along with the continuous lifting of LED performance, its application is also expanded rapidly, wherein the most important thing is semiconductor lighting and LED display.Development semiconductor lighting and LED Display Technique, to the quality of the life of economize energy, protection of the environment, the raising people, strengthen China the capability of sustainable development significant.Meanwhile, semiconductor lighting and LED display industries are to promoting informatization, promoting traditional lighting and display industries and pull the industries such as circuit, encapsulation, material, equipment manufacturing to have significant role.
LED wants to enter room lighting field, and what first need to accomplish is not less than conventional illumination sources on the illuminating effects such as luminous soften, Luminance Distribution.Luminous soft, all or the room lighting light source of the uniform large luminous flux of local luminance, as lamp affixed to the ceiling and spot, due to the huge market demand, obtain and pay attention to widely.But efficient white light LED is not equal to the semiconductor illumination device of illuminating effect excellence.The biggest obstacle of conventional encapsulation white light LEDs products application in room lighting field is, LED chip unit are luminous flux large (the several order of magnitude larger than conventional illumination sources), can produce serious dazzle.Under room lighting environment, compared with being the lighting that forms of light source with conventional fluorescent, electricity-saving lamp, the characteristics of luminescence of conventional encapsulation white light LEDs is unfriendly to human eye, and illuminating effect is not good.
In order to solve the glare problem of conventional encapsulation white light LEDs in room lighting field, usually following two kinds of methods are adopted at present: one, install astigmatism plate additional at the light-emitting face of packaged LED, such as, the LED lamp tube that industry is general, LED lamp affixed to the ceiling, LEDbulb lamp etc. often adopt the method; Its two, install light guide plate additional at the light-emitting face of packaged LED, such as, large-sized LED lamp affixed to the ceiling etc. that industry is general often adopts the method.These two kinds of methods alleviate the dazzle of encapsulation white light LEDs to a certain extent, but multiple boundary reflection/refraction and various material lose a lot of luminous energy to the absorption of light.The luminous efficiency of the semiconductor illumination device adopting above-mentioned two kinds of methods to manufacture reduces comparatively serious compared to routine encapsulation white light LEDs, its luminescence simultaneously still brightness uniformity that is soft not, whole or local is bad, illuminating effect is also difficult to compete with conventional illumination sources.
Therefore still there is the problems such as the soft not brightness of above-mentioned luminescence is even not in current semiconductor illumination device, LED price is higher, and chromaticity uniformity aspect does not have advantage yet and is difficult in the popularization and application of room lighting field in addition.
Utility model content
In view of this, the necessary one that provides goes out the softer and more uniform semiconductor illumination device of brightness of luminescence.
A kind of semiconductor illumination device, comprise: shell structure and LED light source, described LED light source is fixed on described shell structure, described shell structure comprises reflecting surface, described reflecting surface is class lambert type reflecting surface, the light direction of described LED light source points to described reflecting surface at least partially, described LED light source is formed all or the Illumination Distribution of local uniform on described reflecting surface, and by described class lambert type reflecting surface to the reflection of half space solid angle, obtain luminous soft, the whole or uniform illuminating effect of local luminance.
The profile of described shell structure includes but not limited to plate shaped, the bullet bodily form, semiellipse housing shape; Or cross section is trapezoidal, square, semicircle, half elliptic strip cell body shape; Or, the polygon of flat-top; Or utilize the curved surface of non-imaged method design.
Described shell structure comprises interconnective reflector element and fixed cell, described reflector element is the main body section of described shell structure, described fixed cell is extended to form from edge to the center position of described reflecting surface by the main body section of described shell structure, or is extended to form to away from this central point direction from central point by the main body section of described shell structure.
The whole surface of the side towards described LED light source of described reflector element is described class lambert type reflecting surface, and described class lambert type reflecting surface includes but not limited to plane, sphere, ellipsoid, utilizes a part for the curved surface of non-imaged method design or its combination.
The reflecting surface orthographic projection in the plane of described class lambert type includes but not limited to circle, ellipse, square or rectangle.
Described LED light source includes but not limited to integrated distribution or dispersion distribution; Described LED light source is distributed in the periphery or central area that include but not limited to described class lambert type reflecting surface.
The material of the class lambert type reflecting surface described in formation includes but not limited to the material that the high-reflectivity metal such as aluminium, silver material, dielectric material, ceramic material, plastic material or above-mentioned material compound are formed.
The method forming the class lambert type reflection characteristic of described reflecting surface includes but not limited to utilize injection molding process or lithography corrosion process to form micro-structural, inner material of filling formation class lambert type reflection characteristic on reflecting material surface.
Described semiconductor illumination device comprises transparent protective cover further, drive and control power supply, wire and radiator, described transparent protective cover and described shell structure fasten formation one hollow space mutually, described driving and control power supply, wire and radiator are embedded in described shell structure or are attached to outside shell structure, described LED light source and described driving and control power supply and be electrically connected by wire, described driving and control power supply provide electric energy for described LED light source and control its mode of operation, described radiator and described shell structure close contact are arranged, for reducing the junction temperature of described LED light source.
The emission wavelength of described LED light source includes but not limited to ruddiness, green glow, blue light, white light.
Relative to prior art, the class lambert type reflecting surface of the utility model semiconductor illumination device receives the luminous energy that LED light source sends, and with class lambert type to the reflection of half space solid angle, obtains luminous soft, all or the uniform illuminating effect of local luminance; LED light source to whole reflecting surface a luminous energy is provided and from the light of LED light source outgoing only at the reflective surface of class lambert type namely by transparent protective cover outgoing, most light is without the need to through multiple reflections or refraction, and therefore the overall light efficiency of semiconductor illumination device is very high.
Accompanying drawing explanation
The structural representation of a kind of semiconductor illumination device that Fig. 1 provides for the utility model embodiment.
The structural representation of the semiconductor illumination device that Fig. 2 provides for the utility model embodiment 1.
The structural representation of the semiconductor illumination device that Fig. 3 provides for the utility model embodiment 2.
The structural representation of the semiconductor illumination device that Fig. 4 provides for the utility model embodiment 3.
The structural representation of the semiconductor illumination device that Fig. 5 provides for the utility model embodiment 4.
The structural representation of the semiconductor illumination device that Fig. 6 provides for the utility model embodiment 5.
The structural representation of the semiconductor illumination device that Fig. 7 provides for the utility model embodiment 6.
The structural representation of the semiconductor illumination device that Fig. 8 provides for the utility model embodiment 7.
The structural representation of the semiconductor illumination device that Fig. 9 provides for the utility model embodiment 8.
Main element symbol description
| Semiconductor illumination device | 1 |
| Shell structure | 10 |
| Reflector element, reflecting plate | 11 |
| Transparent protective cover | 12 |
| LED light source | 13 |
| Fixed cell | 15 |
| Reflecting surface | 111 |
| Drive and control power supply | 14 |
| Wire | 17 |
| Radiator | 16 |
Following detailed description of the invention will further illustrate the utility model in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
In the accompanying drawing of embodiment of the present utility model and embodiment, same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
In description of the present utility model, it will be appreciated that, term " longitudinal direction ", " transverse direction ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of the instruction such as " outward " are based on orientation shown in the drawings or position relationship, only the utility model and simplified characterization for convenience of description, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as restriction of the present utility model.
Embodiment
Refer to Fig. 1, the semiconductor illumination device 1 that the utility model embodiment provides, it comprises: shell structure 10, transparent protective cover 12 and LED light source 13, and described shell structure 10 is relative with transparent protective cover 12 and mutually fasten and formed with hollow space (sign).Described LED light source 13 to be arranged in described hollow space in described shell structure 10.
Described shell structure 10 comprises reflector element 11 and a fixed cell 15, described reflector element 11 and fixed cell 15 connect and compose overall described shell structure 10 in succession, also can be interconnected for the element that described reflector element 11 is different with fixed cell 15 two kinds and be formed.Described reflector element 11 has one towards the reflecting surface 111 of hollow space, and this reflecting surface 111 is class lambert type reflecting surface.Described fixed cell 15 arranges described LED light source 13.The light-emitting face of described LED light source 13 points to described reflecting surface 111.Therefore, point to described reflecting surface 111 or its part by the light of described LED light source 13 outgoing.The distribution mode of described LED light source 13 includes but not limited to integrated distribution or dispersion distribution; Described LED light source 13 position of arranging includes but not limited to periphery or the central area of described reflecting surface 111.
In present embodiment, class lambert type reflecting surface refers to that light incides the characteristic that there is similar lambert's type function relation between the intensity of the reverberation that reflecting surface produces and the normal at reverberation and this some place of reflecting surface, this characteristic can be strict lambert's type distribution, also can be the distribution departing from strict lambert's type, but non-be mirror-reflection.When any light sent from LED light source 13 is to the reflecting surface of class lambert type, can at generation reverberation in almost half space (phenomenon being all infinite extension by the constraint of a plane in other directions in a direction is half space) solid angle.In this case, observer at an arbitrary position can experience the light reflected from whole or partially reflecting surface, instead of on one point or the light what time reflected.
Described shell structure 10 is for including but not limited to flat board, bullet bodily form body, semiellipse housing body; Or cross section is trapezoidal, square, semicircle, half elliptic strip cell body body; Or, the polygonal body of flat-top.The orthographic projection in the plane of described shell structure 10 includes but not limited to circle, ellipse, square or rectangle.
Described shell structure 10 is directly by including but not limited to aluminium, silver waits high-reflectivity metal material, dielectric material, ceramic material, the reflecting material that plastic material or above-mentioned material compound are formed is formed, described reflector element 11 is a part for described shell structure 10, now the direct photomask surface etching process at described reflector element 11 forms micro-structural and realizes the class lambert type reflection characteristic of described reflecting surface 111 or fill the material etc. that can form class lambert type reflection characteristic at microstructure portion further and realize class lambert type reflection characteristic on the surface at least partially of shell structure 10.Or described reflector element 11 also can fill the class lambert type reflection characteristic that the material etc. that can form class lambert type reflection characteristic realizes described reflecting surface 111 in inside.
Because described shell structure 10 medial surface is described reflecting surface 111, or described shell structure 10 medial surface arranges separately one deck reflecting material to form described reflecting surface 111, therefore the shape of the identical and described shell structure 10 of the shape of described reflecting surface 111, also can not be identical.Described reflecting surface 111 includes but not limited to plane, sphere, ellipsoid, utilizes a part for the curved surface of non-imaged method design or its combination.This reflecting surface 111 orthographic projection is in the horizontal plane circle, triangle, rectangle, rectangle or other polygon.
In the present embodiment, the material of the class lambert type reflecting surface described in formation includes but not limited to the material that the high-reflectivity metal such as aluminium, silver material, dielectric material, ceramic material, plastic material or above-mentioned material compound are formed.The method making described reflecting surface 111 have class lambert type reflection characteristic includes but not limited to utilize injection molding process or lithography corrosion process to form micro-structural on reflecting material surface.
The emission wavelength of described LED light source 13 includes but not limited to ruddiness, green glow, blue light, white light, its packing forms includes but not limited to pinned encapsulation, power-type encapsulation, surface patch encapsulation, chip on board encapsulation, the package lens that its package lens includes but not limited to flat-head type, straw hat type or utilizes non-imaging optical system to design.
Described transparent protective cover 12 is selectable elements, can select as required to arrange or do not arrange.If be provided with described transparent protective cover 12, its material does not affect luminous flux and is advisable.
The meaning be arranged in described hollow space in described shell structure 10 of LED light source 13 described in the utility model includes but not limited to that described LED light source 13 is directly installed in described shell structure 10; Or, be indirectly arranged on described shell structure 10 by means of alternate manner first-class.If adopt described LED light source 13 to be indirectly arranged in described shell structure 10, so described fixed cell 15 is selectable elements, can select as required to arrange or do not arrange.
In the utility model, by controlling the Illumination Distribution that LED light source 13 produces in reflecting surface 111, just can obtain all or the uniform semiconductor illumination device 1 of local luminance.If expect that the semiconductor illumination device 1 of whole brightness uniformity just makes LED light source 13 form the Light distribation of uniform-illumination on whole reflecting surface 111, the light that adoptable method has each LED to send on reflecting surface 111, produce the seamless link of the uniform illuminance such as triangle, rectangle and not overlapping or by the light sent of all LED superpose on reflecting surface 111 produce uniform Illumination Distribution; If that expects that the uniform semiconductor illumination device 1 of local luminance just makes LED light source 13 at reflecting surface 111 is partially formed uniform illumination.In addition, the luminescence of semiconductor illumination device 1 can be made softer by the method increasing reflecting surface 111, this is just equivalent to be exaggerated in non-imaged mode the conventional encapsulated LED light source easily causing dazzle.In the utility model, only reflect namely by transparent protective cover 12 outgoing at the reflecting surface 111 of class lambert type from the light of LED light source 13 outgoing, most light is without the need to through multiple reflections or refraction, and therefore the overall light efficiency of semiconductor illumination device 1 is very high.This shows, the utility model is compared to traditional semiconductor illuminating light source based on astigmatism plate, light guide plate or mirror reflection surface, not only there is the advantage that light efficiency is high, and luminescence is soft, whole or local luminance is even, excellent illuminating effect can be obtained, be that semiconductor illuminating light source marches room lighting field, substitute the ideal chose of traditional lamp affixed to the ceiling, spot etc.
Describe the structure of the semiconductor illumination device 1 that the utility model embodiment provides below in conjunction with accompanying drawing in detail, change the content that little part directly continues to use embodiment in following examples, repeat no more.
Embodiment 1
Referring to Fig. 2, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 1 provides.The semiconductor illumination device 1 of the present embodiment comprises shell structure 10, transparent protective cover 12, LED light source 13, drives and control power supply 14, wire 17 and radiator 16, and described shell structure 10 is relative with transparent protective cover 12 and mutually fasten formation with hollow space (sign).Described LED light source 13 to be arranged in described hollow space in described shell structure 10.Described driving and control power supply 14, wire 17 and radiator 16 are embedded in described shell structure 10.LED light source 13 is electrically connected by wire 17 with driving and controlling power supply 14.Driving and controlling power supply 14 provides electric energy for described LED light source 13 and controls its mode of operation.Radiator 16 and described shell structure 10 close contact are arranged, for reducing the junction temperature of described LED light source 13.
Described shell structure 10 in a flat-top, bottom is the truncated cone-shaped of opening, comprise reflector element 11 and a fixed cell 15, described reflector element 11 and fixed cell 15 are interconnected, and described transparent protective cover 12 fastens with fixed cell 15.Reflector element 11 described in the present embodiment is for arranging the reflecting layer of semicircular shell shape at the medial surface of described shell structure 10 and being formed.Described reflector element 11 has one towards the reflecting surface 111 of hollow space, and this reflecting surface 111 is class lambert type reflecting surface.Described reflector element 11 is in semi circular shells body structure, and described fixed cell 15 is extended to form to hollow space by the lower limb of described reflector element 11.Described fixed cell 15 arranges described LED light source 13, and the light-emitting face of described LED light source 13 is arranged towards described reflecting surface 111, its number and setting position set according to demand, and number can be one or more, and described LED light source 13 is distributed in the periphery of reflecting surface 111.The shape of described reflecting surface 111 includes but not limited to sphere, ellipsoid, utilizes the combination of a part for the curved surface of non-imaged method design or these face types.
The present embodiment can form the semiconductor illumination device 1 of whole brightness uniformity.Described LED light source 13 light-emitting face is towards described reflecting surface 111.Now can adopt following method that LED light source 13 is set: such as, the light that each LED light source 13 sends is limited to approximate strip region: this strip region length is the length of reflecting surface center and reflecting face edge, width is the spacing of two adjacent LED, and the light in this regional extent is formed close to uniform Illumination Distribution on described reflecting surface 111, meanwhile, the illumination making each LED light source 13 be formed on reflecting surface 111 can seamless link.Thus, whole reflecting surface 111 is formed close to uniform Illumination Distribution.When needing the output light flux increasing semiconductor illumination device 1, when the output light flux of single led light source 13 is constant, realize by the number increasing LED light source 13.In this case, the illumination on reflecting surface 111 can increase.In order to the vision eliminating human eye is uncomfortable, suitably can increase the area of reflecting surface 111, make the illumination on reflecting surface 111 keep substantially constant.
The present embodiment also can form the uniform semiconductor illumination device 1 of local luminance.Such as, the light that each LED light source 13 sends is limited to a border circular areas centered by reflecting surface 111 central point with the mid point of the line of this LED light source 13, the light that each LED sends is not overlapping, also do not link together, thus the light of whole LED light source 13 outgoing forms certain pattern on reflecting surface 111, reflect to form the uniform semiconductor lighting electro-optical device 1 of local luminance by the class lambert type of described reflecting surface 111.
Referring to Fig. 3, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 2 provides.The structure of the substantially identical semiconductor illumination device 1 provided with embodiment 1 of the structure of the semiconductor illumination device 1 of the present embodiment, difference is, LED light source 13 is distributed in the middle section of reflecting surface 111, concrete described reflector element 11 is in semi circular shells body structure, the nail-like structure that described fixed cell 15 is extended to form to hollow space by the top center point of described semicircle housing, its free end is nail cap.Described LED light source 13 is arranged at the free end of described fixed cell 15 away from reflecting surface 111, and the light-emitting face of described LED light source 13 is arranged towards described reflecting surface 111.Now, described LED light source 13 is arranged in the central area of described class lambert type reflecting surface 111.
The method that the present embodiment forms the semiconductor illumination device of whole brightness uniformity is: such as, the light of each LED light source 13 outgoing can be limited to the region surrounded with the intersection point of described encapsulation unit 15 by described reflecting surface 111 edge and described reflecting surface 111, the light that each LED sends in this region is close to uniform at the radial direction of reflecting surface, and be for symmetry axis successively decreases on the direction vertical with radial direction with the light exit direction of LED, the illumination formed on reflecting surface 111 by the light of LED light source 13 outgoing can superpose mutually, finally formed close to uniform Illumination Distribution on whole reflecting surface 111, the semiconductor illumination device of whole brightness uniformity is obtained again through the reflection of the reflecting surface 111 of class lambert type.
The method that the present embodiment forms the uniform semiconductor illumination device of local luminance is: such as, the light that each LED light source 13 sends can be limited in the annular region on reflecting surface 111, and the light that sends of adjacent LED light source can seamless link, thus in this annular region the Light distribation of uniform-illumination, and the semiconductor illumination device reflecting to form brightness uniformity in annular region of reflecting surface 111 through class lambert type.
Referring to Fig. 4, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 3 provides.The semiconductor illumination device 1 of the present embodiment comprises shell structure 10, LED light source 13, drives and controls power supply 14, wire (not shown) and radiator (not shown).Described LED light source 13 to be arranged in described hollow space in described shell structure 10.Described driving and control power supply 14, wire and radiator are embedded in described shell structure 10.LED light source 13 is electrically connected by wire with driving and controlling power supply.Driving and controlling power supply provides electric energy for described LED light source 13 and controls its mode of operation.Radiator and described shell structure 10 close contact are arranged, for reducing the junction temperature of described LED light source 13.
The umbrella opened of described shell structure 10 in a flat-top, have the hollow space of semi-surrounding, comprise reflector element 11 and fixed cell 15, described reflector element 11 and fixed cell 15 are interconnected.Described reflector element 11 has one towards the reflecting surface 111 of hollow space, and this reflecting surface 111 is class lambert type reflecting surface.The shape of this reflecting surface 111 is multisection type curved surface, can be any combination of sphere, ellipsoid, the curved surface utilizing non-imaged method design etc.; This reflecting surface 111 orthographic projection is in the plane circular.Shell structure 10 described in the present embodiment is directly by including but not limited to that the material that the high-reflectivity metal such as aluminium, silver material, dielectric material, ceramic material, plastic material or above-mentioned material compound are formed is formed.The method forming the class lambert type reflection characteristic of described reflecting surface 111 is include but not limited to utilize injection molding process or lithography corrosion process to form the method for micro-structural on reflector element 11 surface of described shell structure 10.
The present embodiment comprises one of them fixed cell 15 of two fixed cells 15 and is extended to form to hollow space by the lower limb of described reflector element 11, described fixed cell 15 arranges described LED light source 13, and the light-emitting face of described LED light source 13 is arranged towards described reflecting surface 111; The nail-like structure that another fixed cell 15 is extended to form to hollow space by the top center point of described reflector element 11, its free end is nail cap.Described LED light source 13 is arranged at the free end of described fixed cell 15 away from reflecting surface 111, therefore the inclined-plane of nail cap makes the light-emitting face of described LED light source 13 to arrange towards described reflecting surface 111.These two fixed cells 15 make LED light source be distributed in middle section and the neighboring area of class lambert type reflecting surface 111.The present embodiment, with regard to the integration of similar embodiment 1 and 2, therefore to be formed all/method of the uniform semiconductor illumination device of local luminance can continue to use the method that embodiment 1 and 2 provides.
Referring to Fig. 5, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 4 provides.The structure of the substantially identical semiconductor illumination device 1 provided with embodiment 1 of the structure of the semiconductor illumination device 1 of the present embodiment, difference is, the shape of described shell structure 10 is different, the described shell structure 10 of the present embodiment is by the top of a triangle, rectangle, rectangle, circle or other polygon plane and be connected and interconnective sidewall with this top, and according to the difference of top surface shape, the quantity of side is also different.And described shell structure 10 is directly made up of reflecting material, and have the reflecting surface 111 towards hollow space, this reflecting surface 111 is class lambert type reflecting surface.Described fixed cell 15 is extended to form to hollow space by the lower limb of sidewall described in each.Described fixed cell 15 arranges described LED light source 13, and the light-emitting face of described LED light source 13 is arranged towards described reflecting surface 111, its number and setting position set according to demand, and number can be one or more, and described LED light source 13 is distributed in the periphery of reflecting surface 111.Shell structure 10 described in the present embodiment is directly by including but not limited to that the material that the high-reflectivity metal such as aluminium, silver material, dielectric material, ceramic material, plastic material or above-mentioned material compound are formed is formed.The method forming the class lambert type reflection characteristic of described reflecting surface 111 is include but not limited to utilize injection molding process or lithography corrosion process to form the method for micro-structural on reflector element 11 surface of described shell structure 10.
The method that the present embodiment forms the semiconductor illumination device of whole brightness uniformity is: such as, the light that each LED sends is limited in approximate strip region, this strip region spacing that to be the width of line centered by the line of two symmetrical LED be between two adjacent LED, length be whole reflecting surface length this regional extent of strip region in the illumination that formed on described reflecting surface 111 of light to increase and the mode of monotone decreasing distributes along with the distance from this LED light source, like this, the LED light source 13 of every two symmetries on described reflecting surface 111 illumination in this regional extent mutually superposition to form uniform Illumination Distribution, meanwhile, the illumination that the LED light source of every two symmetries is formed on reflecting surface 111 can seamless link, therefore, whole reflecting surface 111 is formed close to uniform Illumination Distribution.So, light source led light source 13 is final to be formed close to uniform Illumination Distribution on whole reflecting surface 111, and through the semiconductor illumination device 1 reflecting to form whole brightness uniformity of class lambert type reflecting surface 111.
The method that the present embodiment forms the uniform semiconductor illumination device of local luminance is: such as, the light that every side LED light source 13 is sent is limited to the symmetrical center line that departs from the reflecting surface 111 that top planes is formed and width near this LED light source 13 side is the strip region scope of 1/4th of this LED light source width, and the light that each LED light source sends in this regional extent can be seamless spliced.By this set, just can form two strip Illumination Distribution regions on whole reflecting surface 111, and reflect to form the uniform semiconductor illumination device 1 of local luminance through class lambert type reflecting surface 111.
Referring to Fig. 6, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 5 provides.The structure of the substantially identical semiconductor illumination device 1 provided with embodiment 1 of the structure of the semiconductor illumination device 1 of the present embodiment, difference is, LED light source 13 is distributed in the middle section of reflecting surface 111, the nail-like structure that concrete described fixed cell 15 is extended to form to hollow space by top (also can the be referred to as flat top surface) central point of described plane, its free end is nail cap.Described LED light source 13 is arranged at the free end of described fixed cell 15 away from the top of plane, therefore the inclined-plane of nail cap makes the light-emitting face of described LED light source 13 to arrange towards described reflecting surface 111.Now, described LED light source 13 is arranged in the central area of described class lambert type reflecting surface 111.
The method that the present embodiment forms the uniform semiconductor illumination device of all/local luminance can refer to the method for embodiment 2.Such as, the light that each LED light source 13 sends is limited to the region of approximate strip, two long limits of this strip region are parallel with the limit of reflecting surface 11, this LED is positioned at the center of a minor face, the length of minor face is the spacing of two adjacent LEDs, the length on long limit is the half of reflecting surface 11, and is formed close to uniform Illumination Distribution in this region.Meanwhile, the Illumination Distribution that each LED light source 13 is being formed can be seamless spliced, finally on the reflecting surface 111 of class lambert type, forms uniform Illumination Distribution.After the reflection through reflecting surface 111, formed luminous soft, the semiconductor illuminating light source of brightness uniformity.
Referring to Fig. 7, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 6 provides.The semiconductor illumination device 1 of the present embodiment comprises a reflecting plate 11, transparent protective cover 12, LED light source 13, drives and control power supply 14 and wire 17.Described reflecting plate 11 and transparent protective cover 12 fasten formation one hollow space mutually.Described LED light source 13 is arranged in described hollow space.LED light source 13 is electrically connected by wire 17 with driving and controlling power supply 14.Driving and controlling power supply 14 provides electric energy for described LED light source 13 and controls its mode of operation.
Described reflecting plate 11 is a slab construction, and its shape can be triangle, rectangle, rectangle, circle or other polygon.Described reflecting plate 11 has one towards the reflecting surface 111 of hollow space, and this reflecting surface 111 is class lambert type reflecting surface.The shape of described transparent protective cover 12 includes but not limited to sphere, ellipsoid, utilizes the combination of a part for the curved surface of non-imaged method design or these face types.LED light source 13 is distributed in the middle section of reflecting surface 111, the nail-like structure that a concrete fixed cell 15 is extended to form to hollow space by described reflecting plate 11 central point, and its free end is nail cap.Described LED light source 13 is arranged at the free end of described fixed cell 15 away from reflecting surface 111, therefore the inclined-plane of nail cap makes the light-emitting face of described LED light source 13 to arrange towards described reflecting surface 111.Adopt the method similar with embodiment, luminous soft, the whole or uniform semiconductor illuminating light source device of local luminance can be obtained, do not repeat them here.
Referring to Fig. 8, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 7 provides.In the present embodiment, semiconductor illumination device 1 is by the splicing of the pentagon semiconductor illumination device 1 disclosed in embodiment 5.
Referring to Fig. 9, is the structural representation of the semiconductor illumination device 1 that the utility model embodiment 8 provides.The semiconductor illumination device 1 of the present embodiment comprises shell structure 10 and LED light source 13.The cell body shape of described shell structure 10 in strip, and the closed at both ends on rectangular direction.Described shell structure 10 comprises reflector element 11 and a fixed cell 15, and described reflector element 11 and fixed cell 15 are interconnected.Described reflector element 11 is the main body section of described cell body, and described fixed cell 15 is the position extended to form to the hollow space of cell body by the edge on two of described cell body long limits.Described reflector element 11 has one towards the reflecting surface 111 of hollow space, and this reflecting surface 111 is class lambert type reflecting surface.Described fixed cell 15 arranges described LED light source 13, and the light-emitting face of described LED light source 13 is arranged towards described reflecting surface 111, its number and setting position set according to demand, and number can be one or more, and described LED light source 13 is distributed in the periphery of reflecting surface 111.The present embodiment can obtain all or the uniform semiconductor illuminating light source of local luminance equally.Such as, adopt conventional straw hat type package lens, by adjusting the light direction of LED, the light that all LED are sent is formed close to uniform Illumination Distribution on the reflecting surface of class lambert type, thus through the semiconductor illuminating light source reflecting to form whole brightness uniformity of class lambert type reflecting surface.
In addition, those skilled in the art also can do other change in the utility model spirit, and these changes done according to the utility model spirit, all should be included in the utility model scope required for protection certainly.
Claims (10)
1. a semiconductor illumination device, comprise: shell structure and LED light source, described LED light source is arranged at described shell structure, described shell structure comprises reflecting surface, it is characterized in that, described reflecting surface is a class lambert type reflecting surface, and the light direction of described LED light source points to described reflecting surface at least partially, described LED light source is formed all or the Illumination Distribution of local uniform on described reflecting surface, and is reflected to half space solid angle by described class lambert type reflecting surface.
2. semiconductor illumination device as claimed in claim 1, is characterized in that: described shell structure is for including but not limited to flat board, bullet bodily form body, semiellipse housing body; Or cross section is trapezoidal, square, semicircle, half elliptic strip cell body body; Or, the polygonal body of flat-top; Or, utilize the curved body of non-imaged method design.
3. semiconductor illumination device as claimed in claim 1, it is characterized in that: described shell structure comprises interconnective reflector element and fixed cell, described reflector element is the main body section of described shell structure, described fixed cell is extended to form from edge to the center position of described reflecting surface by the main body section of described shell structure, or is extended to form to away from this central point direction from central point by the main body section of described shell structure.
4. semiconductor illumination device as claimed in claim 3, it is characterized in that: the whole surface of the side towards described LED light source of described reflector element is described class lambert type reflecting surface, described class lambert type reflecting surface includes but not limited to plane, sphere, ellipsoid, utilizes a part for the curved surface of non-imaged method design or its combination.
5. the semiconductor illumination device as described in claim 1 or 4, is characterized in that: the reflecting surface orthographic projection in the plane of described class lambert type includes but not limited to circle, ellipse, square or rectangle.
6. semiconductor illumination device as claimed in claim 1, is characterized in that: described LED light source includes but not limited to integrated distribution or dispersion distribution; Described LED light source is distributed in the periphery or central area that include but not limited to described class lambert type reflecting surface.
7. semiconductor illumination device as claimed in claim 1, is characterized in that: the material of the class lambert type reflecting surface described in formation includes but not limited to the material that aluminium, silver, dielectric material, ceramic material, plastic material or above-mentioned material compound are formed.
8. semiconductor illumination device as claimed in claim 1, is characterized in that: the method forming the class lambert type reflection characteristic of described reflecting surface includes but not limited to utilize injection molding process or lithography corrosion process form micro-structural on reflecting material surface and fill the material forming class lambert type reflection characteristic in microstructure portion.
9. semiconductor illumination device as claimed in claim 1, it is characterized in that: comprise transparent protective cover further, drive and control power supply, wire and radiator, described transparent protective cover and described shell structure fasten formation one hollow space mutually, described driving and control power supply, wire and radiator are embedded in described shell structure, described LED light source and described driving and control power supply and be electrically connected by wire, described driving and control power supply provide electric energy for described LED light source and control its mode of operation, described radiator and described shell structure close contact are arranged, for reducing the junction temperature of described LED light source.
10. semiconductor illumination device as claimed in claim 1, is characterized in that: the emission wavelength of described LED light source includes but not limited to ruddiness, green glow, blue light, white light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520852836.4U CN205118683U (en) | 2015-10-23 | 2015-10-30 | Semiconductor illumination device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510692362 | 2015-10-23 | ||
| CN2015106923626 | 2015-10-23 | ||
| CN201520852836.4U CN205118683U (en) | 2015-10-23 | 2015-10-30 | Semiconductor illumination device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205118683U true CN205118683U (en) | 2016-03-30 |
Family
ID=55574296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520852836.4U Active CN205118683U (en) | 2015-10-23 | 2015-10-30 | Semiconductor illumination device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205118683U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105276383A (en) * | 2015-10-23 | 2016-01-27 | 清华大学 | Semiconductor lighting device |
-
2015
- 2015-10-30 CN CN201520852836.4U patent/CN205118683U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105276383A (en) * | 2015-10-23 | 2016-01-27 | 清华大学 | Semiconductor lighting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10976602B2 (en) | Backlight module and display device | |
| CN110325787B (en) | Luminaire with light guide | |
| US10612752B2 (en) | Downwardly directing spatial lighting system | |
| CN102654252A (en) | Lens and illumination device | |
| CN108700731A (en) | Optical lens and lamp unit and the lighting apparatus with it | |
| JP2015103323A (en) | Luminaire | |
| CN201302101Y (en) | LED projection light | |
| US10288261B2 (en) | Low profile lighting module | |
| JP6446202B2 (en) | Wide-angle diffusion optical system and illumination device using the same | |
| US20150345715A1 (en) | LED Luminaire and Components Therefor | |
| US20110032698A1 (en) | United reflection lights with light-emitting diode | |
| CN201764421U (en) | LED reflection cup | |
| CN204100134U (en) | A kind of LED lens and lens module | |
| CN104235760A (en) | LED (Light Emitting Diode) lens and lens module | |
| KR20110088130A (en) | The two-sided illumination led lenses and led modules and led two-sided illuminating systems which use this | |
| CN205118683U (en) | Semiconductor illumination device | |
| US8231244B2 (en) | Lateral reflector | |
| KR20190052690A (en) | Illuminator with asymmetric light distribution pattern | |
| US20230151944A1 (en) | Led luminaire with a cavity and finned interior | |
| CN105276383A (en) | Semiconductor lighting device | |
| US9395064B2 (en) | Lighting device and a road lighting luminaire comprising the lighting device | |
| KR20110076682A (en) | The lighting device using light emission diode | |
| CN201074752Y (en) | High-power LED street lamp | |
| WO2012149819A1 (en) | Led light source device with reflection cup | |
| CN202040632U (en) | LED plane light source device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |