CN205069620U - Non - welded structure semiconductor module - Google Patents
Non - welded structure semiconductor module Download PDFInfo
- Publication number
- CN205069620U CN205069620U CN201520803340.8U CN201520803340U CN205069620U CN 205069620 U CN205069620 U CN 205069620U CN 201520803340 U CN201520803340 U CN 201520803340U CN 205069620 U CN205069620 U CN 205069620U
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- CN
- China
- Prior art keywords
- flase floor
- semiconductor element
- fixed grating
- grating screen
- counterdie
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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Abstract
The utility model discloses a non - welded structure semiconductor module, semiconductor module be including the last modular lattice grid tray, stationary grizzly board, semiconductor component and the lower mould grid board that stack in proper order, it is downthehole that semiconductor component inlays the grid of locating the stationary grizzly board, in the through -hole of upper and lower modular lattice grid tray the hot spraying have with the metal powder layer of semiconductor component terminal surface melting rigid coupling to form respectively and go up water conservancy diversion piece and lower water conservancy diversion piece, the utility model discloses utilize the stationary grizzly board to arrange semiconductor component to set up upper and lower modular lattice grid tray in stationary grizzly board both sides, with metal powder spout into form with the fused metal powder layer of semiconductor component terminal surface, got rid of traditional metal water conservancy diversion piece and soldering tin material at all, effectively prevented the module inefficacy that arouses because of the solder high temperature ageing, simplified the manufacture craft, reduced the pollution to the environment, improved module heat -conduction efficiency.
Description
Technical field
The utility model relates to a kind of semiconductor module, refers more particularly to the good and non-solder structural semiconductor module of environmental protection of a kind of heat-resisting quantity.
Background technology
Along with the progress of expanding economy, society, people propose more and more higher requirement to the energy and environmental protection, collect all energy that can collect and become the urgent problem that current mankind faces, and thermoelectric cooling module can be generated electricity by the temperature difference, waste gas can be utilized in a lot of occasion, waste heat generates electricity.But due to the welding procedure of existing semiconductor module, warm soldering in general employing, can cause the temperature resistant range of semiconductor module only between-20 DEG C ~ 200 DEG C, as being used in high temperature occasion, then scolding tin is easily aging and cause whole semiconductor module to lose efficacy, instructions for use can not be met, moreover soldering tin technique also easily affects environment.
Utility model content
The utility model mainly solves existing semiconductor module and causes the technical problem that heat-resisting quantity is poor, cannot adapt to the use of high temperature occasion by soldering process affects; Provide the good and non-solder structural semiconductor module of environmental protection of a kind of heat-resisting quantity.
In order to solve the technical problem of above-mentioned existence, the utility model mainly adopts following technical proposals:
A kind of non-solder structural semiconductor module, comprise the patrix flase floor stacked successively, fixed grating screen, semiconductor element and counterdie flase floor, described semiconductor element comprises P type semiconductor element and N type semiconductor element and is embedded in the grate opening of described fixed grating screen, the end face of semiconductor element is concordant, the grate opening of the corresponding fixed grating screen of through hole of described patrix flase floor, the grate opening of the corresponding fixed grating screen of through hole of described counterdie flase floor, be filled with in the through hole of patrix flase floor and inwardly extend into fixed grating screen upper surface and the metal powder layer affixed with the melting of semiconductor element upper surface, the outer face of described metal powder layer is concordant with patrix flase floor outer surface and form the spaced upper flow deflector of multi-disc, be filled with in the through hole of counterdie flase floor and inwardly extend into fixed grating screen lower surface and the metal powder layer affixed with the melting of semiconductor element lower surface, the outer face of described metal powder layer is concordant with counterdie flase floor outer surface and form the spaced lower flow deflector of multi-disc, fixed grating screen is adopted to fix semiconductor element, and patrix flase floor and the counterdie flase floor of through hole is provided with respectively at semiconductor element upper surface and lower surface, metal dust to be sprayed in through hole and affixedly with the melting of semiconductor element end face form fine and close guide layer, fundamentally eliminate conventional metals flow deflector and soldering tin material, thus guaranteeing under semiconductor module performance prerequisite, effectively prevent the semiconductor module inefficacy that welding region solder causes because of high temperature ageing, raising heat exchanging efficiency, simplify manufacture craft, reduce cost of manufacture, non-solder mode also reduces the pollution level to environment, simultaneously, thermal resistance is decreased with the flow deflector structure that the external world directly contacts, improve the heat conduction efficiency of semiconductor module.
As preferably, described fixed grating screen comprises the upper fixed grating screen of mirror symmetry and lower fixed grating screen, the upper end of described semiconductor element is embedded in the grate opening of fixed flase floor, the lower end of semiconductor element is embedded in the grate opening of described lower fixed grating screen, the end face of semiconductor element is concordant, fixed grating screen thicker for original monoblock is divided into the thinner fixed grating screen of upper and lower two pieces of mirror symmetries, is easy to the processing of flase floor, reduce cost of manufacture, improve production efficiency.
As preferably, described metal dust is nickel powder, also can use aluminium powder, silver powder or zinc powder.
As preferably, the material of described fixed grating screen, patrix flase floor and counterdie flase floor is Teflon sheet material, Teflon sheet material has excellent high temperature resistance super and to seek peace insulating properties, heatproof can reach 300 DEG C, possesses workability again, reliability is high, with low cost, also can use resin plate or nylon plate.
As preferably, described patrix flase floor inner surface is corresponding with described fixed grating screen upper surface and bond fixing, described counterdie flase floor inner surface and fixed grating screen lower surface bond fixing, ensure the stable connection of upper and lower mould flase floor and fixed grating screen, ease of assembly when thermal spraying.
As preferably, the through-hole wall of described patrix flase floor and counterdie flase floor, all in hair side shape, strengthens the connection of flow deflector and upper and lower mould flase floor, effectively the steadiness of the whole semiconductor module of raising and fail safe.
As preferably, the upper and lower end face of described semiconductor element, all in hair side shape, can strengthen the bonding strength between metal powder layer and semiconductor element, improves the contact of metal powder layer.
The beneficial effects of the utility model are: adopt fixed grating screen to fix semiconductor element, and patrix flase floor and the counterdie flase floor of through hole is provided with respectively at semiconductor element upper surface and lower surface, metal dust to be sprayed in through hole and affixedly with semiconductor element melting form fine and close guide layer, fundamentally eliminate conventional metals flow deflector and soldering tin material, thus guaranteeing under semiconductor module performance prerequisite, effectively prevent the semiconductor module inefficacy that welding region solder causes because of high temperature ageing, raising heat exchanging efficiency, simplify manufacture craft, reduce cost of manufacture, non-solder mode also reduces the pollution level to environment, simultaneously, thermal resistance is decreased with the flow deflector structure that the external world directly contacts, improve the heat conduction efficiency of semiconductor module.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the utility model non-solder structural semiconductor module.
Fig. 2 is the explosive view of Fig. 1 structure.
1. patrix flase floor, 2. semiconductor elements in figure, 3. counterdie flase floor, 4. goes up flow deflector, 5. descends flow deflector, 6. goes up fixed grating screen, 7. descends fixed grating screen, 8. grate opening, 9. through hole.
Embodiment
Below by embodiment, and by reference to the accompanying drawings, the technical solution of the utility model is described in further detail.
Embodiment: a kind of non-solder structural semiconductor module of the present embodiment, as depicted in figs. 1 and 2, comprise the patrix flase floor 1 stacked successively, fixed grating screen, semiconductor element 2 and counterdie flase floor 3, fixed grating screen, the material of patrix flase floor and counterdie flase floor is Teflon sheet material, semiconductor element is bismuth telluride material, comprise P type semiconductor element and N type semiconductor element, the upper and lower end face of semiconductor element is all in hair side shape, fixed grating screen comprises the upper fixed grating screen 6 of mirror symmetry and lower fixed grating screen 7, the upper end of semiconductor element is embedded in the grate opening 8 of fixed grating screen, the upper surface of semiconductor element is concordant with upper fixed grating screen outer surface, the lower end of semiconductor element is embedded in the grate opening of lower fixed grating screen, the lower surface of semiconductor element is concordant with lower fixed grating screen outer surface, the smooth outer surface being adhered to fixed grating screen of cope match-plate pattern flase floor, the grate opening of the upper fixed grating screen of through hole 9 correspondence of patrix flase floor, the smooth outer surface being bonded in lower fixed grating screen of lower bolster flase floor, the grate opening of fixed grating screen under the through hole correspondence of counterdie flase floor, in the through hole of patrix flase floor, thermal spraying has and inwardly extends into fixed grating screen outer surface and the metal powder layer affixed with the melting of semiconductor element upper surface, the outer face of metal powder layer is concordant with patrix flase floor outer surface and form the spaced upper flow deflector 4 of multi-disc, in the through hole of counterdie flase floor, thermal spraying has and inwardly extends into lower fixed grating screen outer surface and the metal powder layer affixed with the melting of semiconductor element lower surface, the outer face of metal powder layer is concordant with counterdie flase floor outer surface and form the spaced lower flow deflector 5 of multi-disc, metal dust is nickel powder.
During non-solder structural semiconductor module assembly, first Teflon sheet material is cut by technological requirement, make patrix flase floor, counterdie flase floor and upper fixed grating screen, lower fixed grating screen, then, upper and lower fixed grating screen cuts out arrangement evenly and with semiconductor element cross section interference fit and can the grate opening of holding semiconductor element, patrix flase floor cuts out and upper stationary grizzly panel gate hole through hole one to one, wherein adjacent through-holes is communicated with the multiple cell body of formation, cell body can form flow deflector by accommodating metal dust, counterdie flase floor cuts out and lower stationary grizzly panel gate hole through hole one to one, wherein adjacent through-holes is communicated with the multiple cell body of formation, cell body can form lower flow deflector by accommodating metal dust, now, fix the upper of semiconductor element, lower fixed grating screen is upper with accommodation metal dust, counterdie flase floor completes.
Secondly, by the roughening process that sandblasts, the both ends of the surface of semiconductor element are made to form roughened structure, according to technological requirement, the upper end of P type semiconductor element and N type semiconductor element is embedded in the corresponding grate opening of upper fixed grating screen respectively again, make the upper surface of semiconductor element concordant with the outer surface of upper fixed grating screen, the lower end of P type semiconductor element and N type semiconductor element is embedded in the corresponding grate opening of lower fixed grating screen respectively, and making the lower surface of semiconductor element concordant with the outer surface of lower fixed grating screen, the arrangement completing semiconductor element is fixed.
Again, the tiling of patrix flase floor AB glue is pasted onto the outer surface of upper fixed grating screen, and the grate opening of fixed grating screen in the through hole correspondence making patrix flase floor, the tiling of counterdie flase floor AB glue is pasted onto the outer surface of lower fixed grating screen, and the grate opening of fixed grating screen under making the through hole correspondence of counterdie flase floor, at patrix flase floor outer surface thermal spraying nickel powder, make nickel powder melted by heating landfill in the through hole of patrix flase floor and fix with the semiconductor element upper surface welding in upper stationary grizzly panel gate hole, the nickel powder of melting forms overall fine and close nickel dam at patrix flase floor outer surface, continue, at the same nickel powder of counterdie flase floor outer surface thermal spraying, make nickel powder melted by heating landfill in the through hole of counterdie flase floor and fix with the welding of semiconductor element lower surface, the nickel powder of melting forms overall fine and close nickel dam at counterdie flase floor outer surface.
Subsequently, by the cooling of the semiconductor module of thermal spraying nickel powder, Milling Process is carried out to a side surface of semiconductor module, removing protrudes from patrix flase floor outer surface and the nickel dam be connected, make patrix flase floor outer surface smooth and the through-hole structure exposed in it, now, nickel dam in through hole just forms multi-disc and connects P type semiconductor element and N type semiconductor element respectively and spaced upper flow deflector, continue, Milling Process is carried out to semiconductor module opposite side surface, the nickel dam that the outstanding counterdie flase floor outer surface of removing is connected, make counterdie flase floor outer surface smooth and the through-hole structure exposed in it, nickel dam in through hole forms multi-disc and connects P type semiconductor element and N type semiconductor element respectively and spaced lower flow deflector, so far, complete the making of non-solder structural semiconductor module.
In description of the present utility model, technical term " on ", D score, " front ", " afterwards ", " interior ", " outward " etc. represent that direction or position relationship are based on direction shown in the drawings or position relationship, be only for convenience of description with understand the technical solution of the utility model, more than illustrate and not restriction has been done to the utility model, the utility model is also not limited only to the citing of above-mentioned explanation, the change that those skilled in the art make in essential scope of the present utility model, remodeling, increase or replace, all should be considered as protection range of the present utility model.
Claims (7)
1. a non-solder structural semiconductor module, it is characterized in that: comprise the patrix flase floor (1) stacked successively, fixed grating screen, semiconductor element (2) and counterdie flase floor (3), described semiconductor element comprises P type semiconductor element and N type semiconductor element and is embedded in the grate opening (8) of described fixed grating screen, the end face of semiconductor element is concordant, the grate opening of the corresponding fixed grating screen of through hole (9) of described patrix flase floor, the grate opening of the corresponding fixed grating screen of through hole of described counterdie flase floor, be filled with in the through hole of patrix flase floor and inwardly extend into fixed grating screen upper surface and the metal powder layer affixed with the melting of semiconductor element upper surface, the outer face of described metal powder layer is concordant with patrix flase floor outer surface and form the spaced upper flow deflector (4) of multi-disc, be filled with in the through hole of counterdie flase floor and inwardly extend into fixed grating screen lower surface and the metal powder layer affixed with the melting of semiconductor element lower surface, the outer face of described metal powder layer is concordant with counterdie flase floor outer surface and form the spaced lower flow deflector (5) of multi-disc.
2. a kind of non-solder structural semiconductor module according to claim 1, it is characterized in that: described fixed grating screen comprises upper fixed grating screen (6) and the lower fixed grating screen (7) of mirror symmetry, the upper end of described semiconductor element (2) is embedded in the grate opening (8) of fixed flase floor, the lower end of semiconductor element is embedded in the grate opening of described lower fixed grating screen, and the end face of semiconductor element is concordant.
3. a kind of non-solder structural semiconductor module according to claim 1, is characterized in that: described metal dust is nickel powder or aluminium powder or silver powder or zinc powder.
4. a kind of non-solder structural semiconductor module according to claim 1, is characterized in that: the material of described fixed grating screen, patrix flase floor (1) and counterdie flase floor (3) is Teflon sheet material or resin plate or nylon plate.
5. a kind of non-solder structural semiconductor module according to claim 1, it is characterized in that: described patrix flase floor (1) inner surface is corresponding with described fixed grating screen upper surface and bond fixing, described counterdie flase floor (3) inner surface and fixed grating screen lower surface bond and fix.
6. a kind of non-solder structural semiconductor module according to claim 1, is characterized in that: through hole (9) inwall of described patrix flase floor (1) and counterdie flase floor (3) is all in hair side shape.
7. according to a kind of non-solder structural semiconductor module one of claim 1 to 6 Suo Shu, it is characterized in that: the upper and lower end face of described semiconductor element (2) is all in hair side shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520803340.8U CN205069620U (en) | 2015-10-16 | 2015-10-16 | Non - welded structure semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520803340.8U CN205069620U (en) | 2015-10-16 | 2015-10-16 | Non - welded structure semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205069620U true CN205069620U (en) | 2016-03-02 |
Family
ID=55396139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520803340.8U Withdrawn - After Issue CN205069620U (en) | 2015-10-16 | 2015-10-16 | Non - welded structure semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205069620U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105336714A (en) * | 2015-10-16 | 2016-02-17 | 杭州大和热磁电子有限公司 | Non-welding structure semiconductor module and manufacturing method |
| US11171066B2 (en) | 2018-12-21 | 2021-11-09 | Infineon Technologies Ag | Semiconductor panels, semiconductor packages, and methods for manufacturing thereof |
-
2015
- 2015-10-16 CN CN201520803340.8U patent/CN205069620U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105336714A (en) * | 2015-10-16 | 2016-02-17 | 杭州大和热磁电子有限公司 | Non-welding structure semiconductor module and manufacturing method |
| CN105336714B (en) * | 2015-10-16 | 2017-10-24 | 杭州大和热磁电子有限公司 | Non-solder structural semiconductor module and preparation method |
| US11171066B2 (en) | 2018-12-21 | 2021-11-09 | Infineon Technologies Ag | Semiconductor panels, semiconductor packages, and methods for manufacturing thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160302 Effective date of abandoning: 20171024 |
|
| AV01 | Patent right actively abandoned |