CN205051003U - Super material absorbent structure , protection casing and electronic system - Google Patents
Super material absorbent structure , protection casing and electronic system Download PDFInfo
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- CN205051003U CN205051003U CN201520764596.2U CN201520764596U CN205051003U CN 205051003 U CN205051003 U CN 205051003U CN 201520764596 U CN201520764596 U CN 201520764596U CN 205051003 U CN205051003 U CN 205051003U
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Abstract
The utility model provides a super material absorbent structure, protection casing and electronic system. Should include the base plate by super material absorbent structure, the electrically conductive geometry layer of at least one deck, electrically conductive geometry layer sets up on the base plate, and electrically conductive geometry layer includes a plurality of electrically conductive framed bents, wherein, electrically conductive framed bent includes a plurality of first busbars that are parallel to each other just interval setting to and the second busbar of connection between adjacent two first busbars. Use the technical scheme of the utility model can solve among the prior art absorbent structure can't distinguish TE ripples (vertical ripples) and TM ripples (lateral wave) and absorb the electromagnetic problem according to work needed.
Description
Technical field
The utility model relates to inhales wave device field, in particular to a kind of Meta Materials absorbent structure, protective cover and electronic system.
Background technology
Generally, high-grade, precision and advanced electronic equipment all can be provided with the protective cover of filter electromagnetic ripple.The object of this protective cover is to make electronic system service behaviour more stable, reliable, also can alleviate the wearing and tearing of electronic equipment and aging simultaneously, increase the service life.But protective cover is the barrier before electronic equipment, can produces the radiated wave of electronic equipment or the electromagnetic wave of incident electron equipment and absorb and reflection, change the free space Energy distribution of electronic equipment, and affect the performance of electronic equipment to a certain extent.
Use pure material protective cover can affect the performance of electronic equipment in certain scope.Wherein, be common physical material for making the pure material of radome, when making pure material protective cover, utilize half-wavelength or quarter-wave theory, and according to different wave frequencies, change the thickness of pure material, in order to reduce electromagnetic wave transparent response or to absorb response.When designing and producing pure material protective cover, when electromagnetic wavelength is long, utilize half-wavelength or quarter-wave theory, pure material protective cover can seem thicker, and then makes the weight of whole protective cover excessive.On the other hand, the wave penetrate capability of pure material is more homogeneous, and when electronic device works, the electromagnetic wave of homogeneous wave transparent easily affects the normal work of electronic equipment.
For the TE ripple (longitudinal wave) sent electronic equipment in prior art and TM ripple (lateral wave) all effectively absorption, TE ripple (longitudinal wave) and TM ripple (lateral wave) cannot be distinguished and carry out the problem of electromagnetic wave absorption according to need of work, not yet proposing effective solution at present.
Utility model content
Main purpose of the present utility model is to provide a kind of Meta Materials absorbent structure, protective cover and electronic system, cannot distinguish TE ripple (longitudinal wave) and TM ripple (lateral wave) and the problem of carrying out electromagnetic wave absorption according to need of work to solve absorbent structure in prior art.
To achieve these goals, according to an aspect of the present utility model, provide a kind of Meta Materials absorbent structure, comprising: substrate; At least one deck conduction geometry layer, conduction geometry layer is arranged on substrate, and conduction geometry layer comprises multiple conduction framed bent; Wherein, the framed bent that conducts electricity comprises multiple being parallel to each other and spaced first bus and the second bus of being connected between adjacent two the first buss.
Further, between multiple conduction framed bent, interval arranges and is not connected mutually.
Further, at least one deck conduction geometry layer is two-layer, two-layer conduction geometry layer is arranged along the compartment of terrain, direction perpendicular to conduction geometry layer, and the projection of each conduction framed bent wherein in one deck conduction geometry layer overlaps with the small part that is projected to of the conduction framed bent of the correspondence position in another layer of conduction geometry layer.
Further, the projection of each conduction framed bent wherein in one deck conduction geometry layer coincides with the projection of the corresponding conduction framed bent in another layer of conduction geometry layer.
Further, each first bus is arranged with the second bus be connected is vertical.
Further, the length of multiple first bus is equal, and the both ends of each first bus in same conduction framed bent are symmetrical arranged about the axis of the second bus.
Further, the rectangular array distribution of multiple conduction framed bents in conduction geometry layer, and the first bus between adjacent two conduction framed bents be arranged in parallel in the same direction.
Further, along the bearing of trend being parallel to the first bus, the distance between the adjacent end of bearing of trend two first buss on the same line of adjacent two conduction framed bents of conduction geometry layer is L1,0.3mm≤L1≤1.0mm.
Further, along the bearing of trend perpendicular to the first bus, the distance between adjacent two conduction framed bents of conduction geometry layer is L2,1.5mm≤L2≤2.5mm.
Further, the distance between adjacent two the first buss in same conduction framed bent is L3,0.5mm≤L3≤1.5mm.
Further, the line length of each first bus is L4, and the live width of each first bus is L5,12.0mm≤L4≤16.0mm, 0.5mm≤L5≤1.0mm.
Further, Meta Materials absorbent structure comprises three laminar substrates, and three laminar substrates are alternately arranged along the vertical direction with conduction geometry layer successively with two-layer conduction geometry layer.
Further, three laminar substrates comprise first substrate, second substrate and the 3rd substrate, and the thickness of first substrate is h1, and the thickness of second substrate is h2, and the thickness of the 3rd substrate is h3, h1 < h2=h3.
Further, mutually bonding between each layer conduction geometry layer and adjacent substrate.
According to another aspect of the present utility model, provide a kind of protective cover, comprise absorbent structure, absorbent structure is aforesaid Meta Materials absorbent structure.
According to another aspect of the present utility model, provide a kind of electronic system, comprise protective cover, protective cover is aforesaid protective cover.
Application the technical solution of the utility model, this Meta Materials absorbent structure comprises substrate and at least one deck conduction geometry layer, every layer of conduction geometry layer comprises at least one conduction framed bent, wherein, each conduction framed bent comprises multiple first bus, and the second bus to be connected respectively with multiple first bus, between multiple first bus, parallel and interval is arranged, and multiple first bus is divided into the both sides that two groups are distributed in the second bus correspondingly.Above-mentioned Meta Materials absorbent structure can regulate dielectric constant and magnetic permeability, electromagnetic wave incident is made to produce better resonance effect by when conduction geometry layer, when can make electromagnetic wave incident Meta Materials absorbent structure of the present utility model, TE ripple (longitudinal wave) is the wave transparent by the impact of Meta Materials absorbent structure hardly, due to TM ripple (lateral wave) in certain wavelength band absorb by Meta Materials absorbent structure and thus make the electromagnetism wave energy high efficiency of working frequency range penetrate, and the electromagnetic wave that can effectively end outside working frequency range, thus solve existing absorbent structure and cannot distinguish TE ripple (longitudinal wave) and TM ripple (lateral wave) thus the problem of carrying out electromagnetic wave absorption according to need of work.Therefore, Meta Materials absorbent structure can distinguish TM and TE ripple, only absorbs TM ripple and does not absorb TE ripple.In addition, TM wave energy is enough is realized segmentation suction wave energy by Meta Materials absorbent structure in different three wavelength band.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, is not formed improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 shows the structural representation being arranged on the embodiment on substrate according to one deck conduction geometry layer of Meta Materials absorbent structure of the present utility model;
Fig. 2 shows the structural representation being arranged on the embodiment on substrate according to the two-layer conduction geometry layer of Meta Materials absorbent structure of the present utility model;
Fig. 3 shows the sectional structure schematic diagram of Fig. 2;
Fig. 4 shows the main TV structure schematic diagram of single conduction framed bent and substrate in the same layer conduction geometry layer according to Meta Materials absorbent structure of the present utility model;
Fig. 5 shows TE ripple according to the CST simulated effect of Meta Materials absorbent structure of the present utility model and TM ripple contrast effect curve chart;
TE ripple and the TM ripple contrast effect curve chart of what Fig. 6 showed Fig. 4 with first band the is CST simulated effect of core bands;
TE ripple and the TM ripple contrast effect curve chart of what Fig. 7 showed Fig. 4 with second band the is CST simulated effect of core bands;
Fig. 8 show Fig. 4 with the TE ripple of the 3rd wave band CST simulated effect that is core bands and TM ripple contrast effect curve chart.
Wherein, above-mentioned accompanying drawing comprises the following drawings mark:
10, substrate; 11, first substrate;
12, second substrate; 13, the 3rd substrate;
20, conduction geometry layer; 21, conduction framed bent;
211, the first bus; 212, the second bus.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the utility model in detail in conjunction with the embodiments.
The schematic construction of substrate 10 has been shown in Fig. 1, Fig. 2 and Fig. 4, but and the thickness of not shown substrate 10, the blank space in the square frame shown in figure is the schematic construction of substrate 10.
As depicted in figs. 1 and 2, a kind of Meta Materials absorbent structure is present embodiments provided.This Meta Materials absorbent structure comprises substrate 10 and at least one deck conduction geometry layer 20, and conduction geometry layer 20 arranges on the substrate 10, and conduction geometry layer 20 comprises multiple conduction framed bent 21.Wherein, the framed bent 21 that conducts electricity comprises multiple first bus 211 and is connected to the second bus 212 between adjacent two the first buss 211.
Above-mentioned Meta Materials absorbent structure can regulate dielectric constant and magnetic permeability, electromagnetic wave incident is made to produce better resonance effect by when conduction geometry layer, when can make electromagnetic wave incident Meta Materials absorbent structure of the present utility model, TE ripple (longitudinal wave) is the wave transparent by the impact of Meta Materials absorbent structure hardly, due to TM ripple (lateral wave) in certain wavelength band absorb by Meta Materials absorbent structure, and in the present embodiment, TM wave energy is enough is realized segmentation suction wave energy by Meta Materials absorbent structure in different three sections of wavelength band, thus the electromagnetism wave energy high efficiency of working frequency range is made to penetrate, and the electromagnetic wave that can effectively end outside working frequency range, thus solve existing absorbent structure and cannot distinguish TE ripple (longitudinal wave) and TM ripple (lateral wave) thus the problem of carrying out electromagnetic wave absorption according to need of work, and subrane can be realized to TM ripple and carry out suction ripple, and TE ripple is not by the impact of Meta Materials absorbent structure.
The conduction geometry layer of the present embodiment can use any electric conducting material manufacture to process, it can be metal material, such as the mixture of gold, silver, copper or several metal, preferably adopts copper, and the original form of the metal material used can be solid, liquid, stream-like body or powder; Also can be nonmetallic materials, as electrically conductive ink.
In the Meta Materials absorbent structure of the present embodiment, between multiple conduction framed bent 21, interval arranges and is not connected mutually.Therefore, what the electromagnetic wave of this Meta Materials absorbent structure incident realized is low pass wave transparent, and is band broadband by the wavelength band inciding the TM ripple of this Meta Materials absorbent structure from high-grade, precision and advanced electronic system that this Meta Materials absorbs.Mutual disjunct conduction framed bent 21 can reduce the reflected energy of the wave band of the predetermined band scope of TM ripple, thus realizes the assimilation effect to TM ripple.
In the present embodiment, conduction geometry layer 20 is made up of two-layer, the thickness range of the two-layer conduction geometry layer 20 of the present embodiment is 0.015mm to 0.025mm, preferably, the thickness of two-layer conduction geometry layer 20 is 0.02mm, two-layer conduction geometry layer 20 is arranged along the compartment of terrain, direction perpendicular to conduction geometry layer 20, and the projection of each conduction framed bent 21 wherein in one deck conduction geometry layer 20 overlaps with the small part that is projected to of the conduction framed bent 21 of the correspondence position in another layer of conduction geometry layer 20.Preferably, in order to the last assimilation effect of this Meta Materials absorbent structure to TM ripple can be realized, therefore, the projection of each conduction framed bent 21 in wherein one deck conduction geometry layer 20 of this Meta Materials absorbent structure coincides (namely overlapping completely) with the projection of the corresponding conduction framed bent 21 in another layer of conduction geometry layer 20.Two-layer conduction geometry layer is utilized to form abated effect to TM wave reflection energy, thus reduce TM wave reflection energy, make the TM ripple of predetermined band scope absorb by this Meta Materials absorbent structure, with the TM ripple avoiding extraneous electromagnetic wave detection device to capture this predetermined band scope, thus detect the place, position of this electronic system.
As shown in Figure 4, Fig. 4 shows the structural representation of an independent conduction framed bent 21, in the structure shown in Fig. 4, get an independent conduction framed bent 21, and around this conduction framed bent, corresponding substrate 10 is got H1 × H2 (i.e. 30mm × 9mm, H1=30mm, H2=9mm) size, the length of multiple first buss 211 of the Meta Materials absorbent structure of the present embodiment is equal, in this Meta Materials absorbent structure, the line length of each first bus 211 is L4, the live width of each first bus 211 is L5, 12.0mm≤L4≤16.0mm, 0.5mm≤L5≤1.0mm, preferably, L4=14.4mm, L5=0.6mm (in the present embodiment, the scope of the width b of the second bus 212 is chosen between 0.5mm to 1.0mm, i.e. 0.5mm≤b≤1.0mm, according to preferred L5=0.6mm, the width b=0.7mm of the second bus 212, like this, the overall width of same conduction framed bent 21 on the bearing of trend along the first bus 211 is 29.5mm).Each first bus 211 is arranged with the second bus 212 be connected is vertical.Further, the both ends of each first bus 211 in same conduction framed bent 21 are symmetrical arranged about the axis of the second bus 212.When wave transparent energy and the raising TE wave reflection energy of electromagnetic TE ripple, thus the TE wave energy making this Meta Materials absorbent structure incident wave transparent expeditiously by this Meta Materials absorbent structure affects enough hardly, and for the TM ripple of this Meta Materials absorbent structure incident, each first bus 211 can reduce the TM wave reflection energy of the predetermined band scope between them, therefore, the TM ripple of the predetermined band scope of incidence is absorbed.
In conjunction with see shown in Fig. 1, Fig. 2 and Fig. 4, in same layer conduction geometry layer 20, the rectangular array distribution of multiple conduction framed bents 21 in the conduction geometry layer 20 of this Meta Materials absorbent structure, and the first bus 211 between adjacent two conduction framed bents 21 be arranged in parallel in the same direction.Further, along the bearing of trend being parallel to the first bus 211, distance between the adjacent end of bearing of trend two first buss 211 on the same line of adjacent two conduction framed bents 21 of conduction geometry layer 20 is L1, 0.3mm≤L1≤1.0mm, preferably, L1=0.5mm (is parallel on the bearing of trend of the first bus 211 on edge, arrange correspondingly between each first bus 211 between adjacent two conduction framed bents 21, then L1 represents between two the first buss 211 being oppositely arranged in adjacent two conduction framed bents 21 between adjacent two ends distance).And, along the bearing of trend perpendicular to the first bus 211, distance between adjacent two conduction framed bents 21 of conduction geometry layer 20 is L2,1.5mm≤L2≤2.5mm, preferably, L2=2.0mm (on bearing of trend perpendicular to the first bus 211, in multiple conduction framed bents 21 of same longitudinal rows, L2 represents the distance between two adjacent first buss 211 of adjacent two conduction framed bents 21).
As shown in Figure 4, the distance between adjacent two the first buss 211 in same conduction framed bent 21 is L3,0.5mm≤L3≤1.5mm, preferably, and L3=1.0mm.
As shown in Figure 3, Meta Materials absorbent structure comprises three laminar substrates 10, and (three laminar substrates 10 all utilize FR4 substrate, wherein, the scope of the dielectric constant of FR4 substrate is 2.4≤ε≤3.6, preferably ε=3.0), three laminar substrates 10 are alternately arranged along the vertical direction with conduction geometry layer 20 successively with two-layer conduction geometry layer 20.Thus utilize substrate 10 two-layer conduction geometry interlayer to be separated suitable distance to optimize TE ripple wave transmission effect to reach and optimize assimilation effect to TM ripple.
Particularly, three laminar substrates 10 comprise first substrate 11, second substrate 12 and the 3rd substrate 13, and the thickness of first substrate 11 is h1, and the thickness of second substrate 12 is h2, and the thickness of the 3rd substrate 13 is h3, h1 < h2=h3.In the present embodiment, the thickness range of first substrate 11 is 0.8mm≤h1≤1.2mm, be preferably h1=1mm, the thickness range of second substrate 12 and the 3rd substrate 13 is 7.5mm to 11.5mm, and preferably the thickness of second substrate 12 and the 3rd substrate 13 is h2=h3=9.5mm.
In order to improve the operating efficiency manufacturing this Meta Materials absorbent structure of processing, thus, mutually bonding between each layer conduction geometry layer 20 and adjacent substrate 10.Certainly, each conduction geometry layer 20 can also electroplate on one of them adjacent substrate 10 that (namely wherein one deck conduction geometry layer 20 of this Meta Materials absorbent structure can be electroplated on first substrate 11, also can electroplate on second substrate 12; Another layer conduction geometry layer 20 can be electroplated on second substrate 12, also can electroplate on the 3rd substrate 13).
After this Meta Materials absorbent structure has assembled, its two-layer conduction geometry layer 20 plays the effect of both resistive layers in this Meta Materials absorbent structure, because two-layer conduction geometry layer 20 is to the priority of the electromagnetic order of action of incidence, incide the difference of the electromagnetic magnetic flux rate of two-layer conduction geometry layer 20 respectively, and the thickness of substrate 10 that electromagnetic wave is each passed through is different, therefore the resistance value of the resistive layer of two-layer conduction geometry layer 20 formation will be different, wherein the resistance value of one deck resistive layer is 50 Ω/Sq, the resistance value of another layer of resistive layer is 200 Ω/Sq.After the Meta Materials absorbent structure of the present embodiment has assembled, its gross thickness has been 20.04mm.
Apply Meta Materials absorbent structure of the present utility model when testing, as shown in Figure 4, the 3rd substrate 13 in this Meta Materials absorbent structure is placed on one deck copper coin and tests, the thickness range of this layer of copper coin is 0.015mm to 0.025mm, preferably the thickness of this copper coin is 0.018mm, is the performance of the electromagnetic wave absorption in order to test this Meta Materials absorbent structure like this.
As shown in Figure 5, it illustrates the CST simulated effect curve chart that the TE ripple of this Meta Materials absorbent structure of application when testing and TM ripple contrast, S11 (TE), S ' 11 (TM) in figure.Can know from Fig. 5, when TE ripple this Meta Materials absorbent structure incident, this Meta Materials absorbent structure impacts TE ripple hardly, TE wave energy wave transparent enough efficiently, and when TM ripple this Meta Materials absorbent structure incident, in the wavelength band of TM ripple between first band (i.e. 1.69GHz to 6.61GHz), second band (i.e. 10.67GHz to 15.29GHz) and the 3rd wave band (i.e. 19.52GHz to 24.34GHz), meeting cannot wave transparent by absorbing.When TE ripple is incident (incidence angle of TE ripple is zero, and namely TE ripple is incident from front), electromagnetic wave does not have much affect, by the electromagnetic wave energy that reflects at below 17.25GHz all higher than-3.87dB, namely in figure shown in S11 (TE) curve.
In conjunction with see shown in Fig. 5 and Fig. 6, Fig. 6 shows with first band TE ripple and the TM ripple contrast effect curve chart of the CST simulated effect being core bands.Incide the TM wave reflection energy of the first band scope of this Meta Materials absorbent structure lower than (incidence angle of TM ripple is zero, and namely TM ripple is incident from front) S ' in-10dB, figure 11 (TM) curve Suo Shi.
In conjunction with see shown in Fig. 5 and Fig. 7, Fig. 7 shows with second band TE ripple and the TM ripple contrast effect curve chart of the CST simulated effect being core bands.When TM ripple is incident, (incidence angle of TM ripple is zero, namely TM ripple is incident from front), electromagnetic wave can be able to be absorbed at the electromagnetic wave of the wavelength band of second band, the reflection of electromagnetic wave energy in this wavelength band all lower than-10dB, namely in figure shown in S ' 11 (TM) curve.
In conjunction with see shown in Fig. 5 and Fig. 8, Fig. 8 shows with the TE ripple of the 3rd wave band CST shockproof effect that is core and TM ripple contrast effect curve chart.When TM ripple is incident, (incidence angle of TM ripple is zero, namely TM ripple is incident from front), electromagnetic wave can be able to be absorbed at the electromagnetic wave of the wavelength band of the 3rd wave band, the reflection of electromagnetic wave energy in this wavelength band all lower than-10dB, namely in figure shown in S ' 11 (TM) curve.
According to another aspect of the present utility model, provide a kind of protective cover, this protective cover comprises absorbent structure, and this absorbent structure is aforesaid Meta Materials absorbent structure.
According to another aspect of the present utility model, provide a kind of electronic system, this electronic system comprises protective cover, and this protective cover is aforesaid protective cover.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (16)
1. a Meta Materials absorbent structure, is characterized in that, comprising:
Substrate (10);
At least one deck conduction geometry layer (20), described conduction geometry layer (20) is arranged on described substrate (10), and described conduction geometry layer (20) comprises multiple conduction framed bent (21);
Wherein, described conduction framed bent (21) comprises multiple being parallel to each other and spaced first bus (211) and the second bus (212) of being connected between adjacent two described first buss (211).
2. Meta Materials absorbent structure according to claim 1, is characterized in that, between multiple described conduction framed bent (21), interval arranges and is not connected mutually.
3. Meta Materials absorbent structure according to claim 1 and 2, it is characterized in that, geometry layer (20) at least conduct electricity described in one deck for two-layer, two-layer described conduction geometry layer (20) is arranged along the compartment of terrain, direction perpendicular to described conduction geometry layer (20), and the projection of each described conduction framed bent (21) in geometry layer (20) of wherein conducting electricity described in one deck overlaps with the small part that is projected to of the described conduction framed bent (21) of the correspondence position in another layer of described conduction geometry layer (20).
4. Meta Materials absorbent structure according to claim 3, it is characterized in that, the projection of each described conduction framed bent (21) in geometry layer (20) of wherein conducting electricity described in one deck coincides with the projection of the corresponding described conduction framed bent (21) in another layer of described conduction geometry layer (20).
5. Meta Materials absorbent structure according to claim 1, is characterized in that, each described first bus (211) is arranged with described second bus (212) be connected is vertical.
6. Meta Materials absorbent structure according to claim 5, it is characterized in that, the length of multiple described first bus (211) is equal, and the both ends of each described first bus (211) in same described conduction framed bent (21) are symmetrical arranged about the axis of described second bus (212).
7. Meta Materials absorbent structure according to claim 2, it is characterized in that, the rectangular array distribution of multiple described conduction framed bent (21) in described conduction geometry layer (20), and described first bus (211) of adjacent two described conduction framed bents (21) be arranged in parallel in the same direction.
8. Meta Materials absorbent structure according to claim 7, it is characterized in that, along the bearing of trend being parallel to described first bus (211), distance between the adjacent end of bearing of trend two described first buss (211) on the same line of adjacent two described conduction framed bents (21) of described conduction geometry layer (20) is L1,0.3mm≤L1≤1.0mm.
9. Meta Materials absorbent structure according to claim 7, it is characterized in that, along the bearing of trend perpendicular to described first bus (211), distance between adjacent two described conduction framed bents (21) of described conduction geometry layer (20) is L2,1.5mm≤L2≤2.5mm.
10. Meta Materials absorbent structure according to claim 1, is characterized in that, the distance between adjacent two described first buss (211) in same described conduction framed bent (21) is L3,0.5mm≤L3≤1.5mm.
11. Meta Materials absorbent structures according to claim 1, it is characterized in that, the line length of each described first bus (211) is L4, and the live width of each described first bus (211) is L5,12.0mm≤L4≤16.0mm, 0.5mm≤L5≤1.0mm.
12. Meta Materials absorbent structures according to claim 3, it is characterized in that, described Meta Materials absorbent structure comprises three layers of described substrate (10), and three layers of described substrate (10) are alternately arranged with direction that is described conduction geometry layer (20) along vertical successively with two-layer described conduction geometry layer (20).
13. Meta Materials absorbent structures according to claim 12, it is characterized in that, three layers of described substrate (10) comprise first substrate (11), second substrate (12) and the 3rd substrate (13), the thickness of described first substrate (11) is h1, the thickness of described second substrate (12) is h2, the thickness of described 3rd substrate (13) is h3, h1 < h2=h3.
14. Meta Materials absorbent structures according to claim 12, is characterized in that, mutually bonding between each layer described conduction geometry layer (20) and adjacent described substrate (10).
15. 1 kinds of protective covers, comprise absorbent structure, it is characterized in that, the Meta Materials absorbent structure of described absorbent structure according to any one of claim 1 to 14.
16. 1 kinds of electronic systems, comprise protective cover, it is characterized in that, described protective cover is protective cover according to claim 15.
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| CN201520764596.2U CN205051003U (en) | 2015-09-29 | 2015-09-29 | Super material absorbent structure , protection casing and electronic system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017157218A1 (en) * | 2016-03-16 | 2017-09-21 | 深圳光启高等理工研究院 | Antenna |
| CN108068410A (en) * | 2017-12-15 | 2018-05-25 | 航天科工武汉磁电有限责任公司 | A kind of lightweight broad-band electromagnetic-wave absorbent and preparation method thereof |
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2015
- 2015-09-29 CN CN201520764596.2U patent/CN205051003U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017157218A1 (en) * | 2016-03-16 | 2017-09-21 | 深圳光启高等理工研究院 | Antenna |
| US10784574B2 (en) | 2016-03-16 | 2020-09-22 | Kuang-Chi Institute Of Advanced Technology | Antenna |
| CN108068410A (en) * | 2017-12-15 | 2018-05-25 | 航天科工武汉磁电有限责任公司 | A kind of lightweight broad-band electromagnetic-wave absorbent and preparation method thereof |
| CN108068410B (en) * | 2017-12-15 | 2020-06-23 | 航天科工武汉磁电有限责任公司 | Light broadband electromagnetic wave-absorbing material and preparation method thereof |
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Effective date of registration: 20160317 Address after: 518057 Guangdong City, Nanshan District province high tech Zone in the middle of a high tech building, building No. 4, No. 9, building Patentee after: Shenzhen Guangqi Innovative Technology Co., Ltd. Address before: 518057 Guangdong City, Nanshan District province high tech Zone in the middle of a high tech building, building No. 2, No. 9, building Patentee before: Shenzhen Kuang-Chi Institute of Advanced Technology |