CN205035490U - A thermal field structure for draing zone -melting 8 -12 cun silicon single crystal - Google Patents
A thermal field structure for draing zone -melting 8 -12 cun silicon single crystal Download PDFInfo
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- CN205035490U CN205035490U CN201520811484.8U CN201520811484U CN205035490U CN 205035490 U CN205035490 U CN 205035490U CN 201520811484 U CN201520811484 U CN 201520811484U CN 205035490 U CN205035490 U CN 205035490U
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- coil
- heat shielding
- silicon single
- field structure
- cun
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- 239000013078 crystal Substances 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 238000004857 zone melting Methods 0.000 title abstract description 8
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 23
- 239000010959 steel Substances 0.000 claims abstract description 23
- 238000002844 melting Methods 0.000 claims abstract description 20
- 230000008018 melting Effects 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201520811484.8U CN205035490U (en) | 2015-10-19 | 2015-10-19 | A thermal field structure for draing zone -melting 8 -12 cun silicon single crystal |
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CN201520811484.8U CN205035490U (en) | 2015-10-19 | 2015-10-19 | A thermal field structure for draing zone -melting 8 -12 cun silicon single crystal |
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CN205035490U true CN205035490U (en) | 2016-02-17 |
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CN201520811484.8U Active CN205035490U (en) | 2015-10-19 | 2015-10-19 | A thermal field structure for draing zone -melting 8 -12 cun silicon single crystal |
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CN (1) | CN205035490U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108193262A (en) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | A kind of reflector for being used to draw study on floating zone silicon |
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2015
- 2015-10-19 CN CN201520811484.8U patent/CN205035490U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108193262A (en) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | A kind of reflector for being used to draw study on floating zone silicon |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181101 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191231 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address |