CN205029555U - Carbonization silicon diode antisurge device - Google Patents
Carbonization silicon diode antisurge device Download PDFInfo
- Publication number
- CN205029555U CN205029555U CN201520376655.9U CN201520376655U CN205029555U CN 205029555 U CN205029555 U CN 205029555U CN 201520376655 U CN201520376655 U CN 201520376655U CN 205029555 U CN205029555 U CN 205029555U
- Authority
- CN
- China
- Prior art keywords
- diode
- surge
- turn
- sic diode
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/10—Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Rectifiers (AREA)
Abstract
The utility model discloses a carbonization silicon diode antisurge device relates to the power field. The utility model discloses a carbonization silicon diode antisurge device, the parallel circuit of the SIC diode in the type switching power supply BOOST topology NULL power power factor correction PFC circuit that steps up, wherein, main SIC diode of one route of parallel circuit constitutes, parallel circuit's subsidiary SIC diode of another route and the threshold biasing serial module that switches on who is used for the surge reposition of redundant personnel constitute. The utility model provides high parallel circuit switches on the pressure drop, makes it not switch on at the normal during operation of circuit, only the reposition of redundant personnel main SIC diode of protection and solve the SIC diode that the antisurge assaults and need independent radiating problem when the surge overflows.
Description
Technical field
The utility model relates to field of power supplies, particularly relates to alternating current input power supplying power factor correction (PFC, PowerFactorCorrection) device.
Background technology
The APFC of step-up switching power supply BOOST structure is commonly used in current alternating-current switch power supply, and carborundum SIC diode is also more and more extensive in the application of pfc circuit.The impulse current that SIC diode bears in pfc circuit is often several times as much as the electric current flow through when self normally works, when SIC diode self character causes it to bear instantaneous large-current, the loss of self is far longer than common diode, easily causes the cause thermal damage of self.
In order to improve the Surge handling capability of SIC diode, general employing two SIC diodes are directly in parallel, Surge handling capability can be improved like this, but when normally working, two diodes have relatively high power to flow through, the fin needed is comparatively large, does not meet the development trend of Switching Power Supply high power density.
Utility model content
Technical problem to be solved in the utility model is, provides a kind of SIC diode anti-surge device, and the SIC diode impacted to solve antisurge needs the problem of independent heat radiation.
In order to solve the problems of the technologies described above, the utility model discloses a kind of carborundum SIC diode anti-surge device, comprise the parallel circuits of the SIC diode in step-up switching power supply BOOST topology alternating current input power supplying power factor correction pfc circuit, wherein:
One the main SIC diode of route one of described parallel circuits is formed, and the auxiliary SIC diode of another route one of described parallel circuits is in series with the turn-on threshold biasing module shunted for surge.
Alternatively, in said apparatus, the described turn-on threshold biasing module for surge shunting is made up of one or more Diode series.
Alternatively, in said apparatus, described is usual diodes or SIC diode for the diode in the turn-on threshold biasing module of surge shunting.
Alternatively, in said apparatus, described is the diode that paster encapsulates for the diode in the turn-on threshold biasing module of surge shunting.
Alternatively, in said apparatus, described is the diode that straight cutting encapsulates for the diode in the turn-on threshold biasing module of surge shunting.
Alternatively, in said apparatus, the described turn-on threshold biasing module for surge shunting suppresses TVS diode to form by a transient state.
The utility model is a SIC diode in parallel and a turn-on threshold biasing module for surge shunting at the two ends of main SIC diode; thus improve the conduction voltage drop of parallel circuits; make its not conducting when circuit normally works, only the main SIC diode of divided current and solve the problem that SIC diode that antisurge impacts needs independent heat radiation when surge overcurrent.
Accompanying drawing explanation
Fig. 1 is the utility model apparatus structure schematic diagram;
Fig. 2 is the operating characteristic schematic diagram of D1 in the utility model device;
Fig. 3 is one of adaptive overcurrent protection circuit schematic diagram in the utility model;
Fig. 4 is two schematic diagrames of adaptive overcurrent protection circuit in the utility model.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, hereafter will be described in further detail technical solution of the present invention by reference to the accompanying drawings.It should be noted that, when not conflicting, the feature in the embodiment of the application and embodiment can combine arbitrarily mutually.
The present embodiment provides a kind of SIC diode anti-surge device, as shown in Figure 1, include the parallel circuits of the SIC diode in step-up switching power supply BOOST topology alternating current input power supplying power factor correction pfc circuit, wherein, one the main SIC diode of route one (being D1 in Fig. 1) of this parallel circuits is formed, and the auxiliary SIC diode of another route one (being D2 in Fig. 1) of this parallel circuits is in series with the turn-on threshold biasing module shunted for surge.
As can be seen from Figure 1, the turn-on threshold voltage that turn-on threshold biasing module mainly improves the loop at D2 place is tried to gain for surge shunting, such as D1 leads to alive when node 1 exceeds 1V than node 2 and flows through, D2 exists due to turn-on threshold biasing module, leads to alive and flow through when needing node 1 to exceed 2V than node 2.When power supply normally works, electric current flows through mainly through substantially not having electric current in D1, D2, and therefore D2 does not need to use fin, or D2 also can select paster to encapsulate, and the space taken is smaller.
Time power supply runs into lightning surge impact, first instantaneous large-current flows through D1, because the conducting voltage of D1 becomes large along with the increase of electric current, and conducting voltage uprises and increases along with the temperature of device, thus cause pressure reduction between node 1 and node 2 to become large, after arriving loop, D2 place conduction voltage drop, D2 starts open-minded, shared surge impact electric current.
In Fig. 2, curve a is voltage and the current characteristic curve of SIC diode D1, when straight line is D2 loop starts, and the forward voltage VF1 that node 1 exceeds than node 2, the corresponding operating current IF1 flowing through D1.When the electric current flowing through D1 in pfc circuit is less than IF1, do not have electric current to flow through in D2 loop, when flowing through the electric current in D1 more than IF1, D2 and D3 participates in shunting and starts have electric current to flow through.
What be noted that above-mentioned turn-on threshold biasing module specifically implements various ways, and the present embodiment is mainly described in the following two kinds mode.
The first execution mode of turn-on threshold biasing module is made up of one or more Diode series.Now, whole parallel circuits as shown in Figure 3.And the number of the diode of series connection can need to select according to self circuit in Power Management Design, can be one also can time many.In addition, when the diode of series connection is multiple, during D2 loop starts, need the pressure drop at D1 two ends larger, also can need to select suitable series diode number according to power grade.The diode of concrete employing can be usual diodes or SIC diode, can be the diode of paster encapsulation or straight cutting encapsulation.
The second execution mode of turn-on threshold biasing module is, suppresses TVS diode to form by a transient state.Now, whole parallel circuits as shown in Figure 4.D2 conducting needs node 1 to be D2 turn-on threshold voltage and TVS operation voltage sum than the voltage that node 2 exceeds.
As can be seen from above-described embodiment, the utility model improves the conduction voltage drop of parallel diode D2 by turn-on threshold biasing module, achieves D2 and D1 and jointly shares surge impact electric current, and when circuit normally works, D2 does not participate in work, therefore can not produce any impact to existing pfc circuit.
The above, be only preferred embodiments of the present utility model, is not intended to limit this and implements novel protection range.All within spirit of the present utility model and principle, any amendment made, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (6)
1. a silicon carbide diode anti-surge device, comprises the parallel circuits of the carborundum SIC diode in step-up switching power supply BOOST topology alternating current input power supplying power factor correction pfc circuit, it is characterized in that:
One the main SIC diode of route one of described parallel circuits is formed, and the auxiliary SIC diode of another route one of described parallel circuits is in series with the turn-on threshold biasing module shunted for surge.
2. device as claimed in claim 1, is characterized in that,
The described turn-on threshold biasing module for surge shunting is made up of one or more Diode series.
3. device as claimed in claim 1, is characterized in that, described is usual diodes or SIC diode for the diode in the turn-on threshold biasing module of surge shunting.
4. device as claimed in claim 2 or claim 3, is characterized in that, described is the diode that paster encapsulates for the diode in the turn-on threshold biasing module of surge shunting.
5. device as claimed in claim 2 or claim 3, is characterized in that, described is the diode that straight cutting encapsulates for the diode in the turn-on threshold biasing module of surge shunting.
6. device as claimed in claim 1, is characterized in that, the described turn-on threshold biasing module for surge shunting suppresses TVS diode to form by a transient state.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520376655.9U CN205029555U (en) | 2015-06-03 | 2015-06-03 | Carbonization silicon diode antisurge device |
| PCT/CN2016/077542 WO2016192448A1 (en) | 2015-06-03 | 2016-03-28 | Silicon carbide diode anti-surge apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520376655.9U CN205029555U (en) | 2015-06-03 | 2015-06-03 | Carbonization silicon diode antisurge device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205029555U true CN205029555U (en) | 2016-02-10 |
Family
ID=55262057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520376655.9U Active CN205029555U (en) | 2015-06-03 | 2015-06-03 | Carbonization silicon diode antisurge device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN205029555U (en) |
| WO (1) | WO2016192448A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016192448A1 (en) * | 2015-06-03 | 2016-12-08 | 中兴通讯股份有限公司 | Silicon carbide diode anti-surge apparatus |
| CN109546853A (en) * | 2019-01-03 | 2019-03-29 | 浙江鲲悟科技有限公司 | The active PFC circuit and frequency changing driving system of Anti-surging |
| CN112769325A (en) * | 2020-12-30 | 2021-05-07 | 珠海拓芯科技有限公司 | Power factor correction circuit, outer unit controller and air conditioner |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1864319A (en) * | 2003-10-01 | 2006-11-15 | 国际整流器公司 | Bridgeless boost converter with pfc circuit |
| CN203706129U (en) * | 2014-01-16 | 2014-07-09 | 王运发 | Power-on anti-impacting circuit of computer power circuit |
| CN204014174U (en) * | 2014-05-30 | 2014-12-10 | 西安文理学院 | A kind of digital control LED streetlamp driving power supply |
| CN205029555U (en) * | 2015-06-03 | 2016-02-10 | 中兴通讯股份有限公司 | Carbonization silicon diode antisurge device |
-
2015
- 2015-06-03 CN CN201520376655.9U patent/CN205029555U/en active Active
-
2016
- 2016-03-28 WO PCT/CN2016/077542 patent/WO2016192448A1/en active Application Filing
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016192448A1 (en) * | 2015-06-03 | 2016-12-08 | 中兴通讯股份有限公司 | Silicon carbide diode anti-surge apparatus |
| CN109546853A (en) * | 2019-01-03 | 2019-03-29 | 浙江鲲悟科技有限公司 | The active PFC circuit and frequency changing driving system of Anti-surging |
| CN112769325A (en) * | 2020-12-30 | 2021-05-07 | 珠海拓芯科技有限公司 | Power factor correction circuit, outer unit controller and air conditioner |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016192448A1 (en) | 2016-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104011873B (en) | Circuits and methods for limiting open circuit voltage of photovoltaic strings | |
| CN205029555U (en) | Carbonization silicon diode antisurge device | |
| WO2016127549A1 (en) | Selective protection circuit and method, and power supply system | |
| CN108448557A (en) | A kind of High Power Airborne DC over-voltage surge restraint circuit | |
| CN106972769A (en) | A kind of light current electrical load overvoltage crowbar | |
| WO2019062172A1 (en) | Simulation model and method for direct current circuit breaker, and storage medium | |
| JP5926079B2 (en) | Power converter | |
| CN108847835A (en) | A kind of power device Drive Protecting Circuit and its control method | |
| CN102709902A (en) | Surge current protection device | |
| CN109687416A (en) | A kind of economical DC Line Fault current limiter of multiport | |
| CN106207959A (en) | Electromagnetism voltage-stabilizing energy-saving device over-voltage over-current protection device | |
| CN205304240U (en) | Control circuit is prevented joining conversely by high -power direct current | |
| CN110445359A (en) | A kind of power circuit of single-phase active arc extinguishing type short-circuit protection | |
| CN203352465U (en) | DC stabilized power supply suitable for oil field and oil well remote measurement and control system | |
| CN203589831U (en) | Redundant hot backup industrial Ethernet switch power supply | |
| CN104617796A (en) | Modular AC/DC converter and inverter topology | |
| CN201504240U (en) | PoE port circuit and PSE equipment | |
| WO2017181806A1 (en) | Switching-mode power supply lightning protection apparatus and switching-mode power supply | |
| CN202167843U (en) | Power supply output overvoltage protective circuit used for LED liquid crystal display television | |
| CN204424869U (en) | A kind of hiccup protections circuit and apply the photovoltaic generating system of this circuit | |
| CN202977969U (en) | Efficient protection circuit of laser coupling power source | |
| CN108615728B (en) | High-voltage lightning stroke protection circuit in chip | |
| CN206322693U (en) | A kind of rectifier bridge stack with temperature protection function | |
| CN2777817Y (en) | Protection circuit for single switch power | |
| CN102457054A (en) | Surge protection device and method for current sampling circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |