CN204990663U - Communication chip performance raising circuitry - Google Patents
Communication chip performance raising circuitry Download PDFInfo
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- CN204990663U CN204990663U CN201520549609.4U CN201520549609U CN204990663U CN 204990663 U CN204990663 U CN 204990663U CN 201520549609 U CN201520549609 U CN 201520549609U CN 204990663 U CN204990663 U CN 204990663U
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Abstract
The utility model discloses a communication chip performance raising circuitry, including a SX1278 chip and a high frequency switch, be equipped with a preamplification circuit between the signal input part of SX1278 chip and high frequency switch, the output pin RF1 of high frequency switch with preamplification circuit electricity is connected, its input pin RF2 behind the peripheral circuit with SX1278 chip electric connection, the receipt pin RFC of high frequency switch is connected with signal antennas behind an electric capacity C27, one of them control end VH2 of high frequency switch is connected with the preamplification circuit. Chip received signal's sensitivity, spread spectrum transmission performance and transmission distance have effectively been improved through setting up of this circuit, and control chip only just works when needs are received, can effectively reduce the loss of chip, has improved the life of chip.
Description
Technical field
The utility model relates to a kind of circuit for promoting communication chip performance, is specifically related to SX1278 chip as performance boost circuit during RF communication module.
Background technology
Along with the development of technology, wireless long-distance meter-reading technology is one of technical way of gas industry at present, wherein adopted communication module scheme is a lot, it is all the RF chip type for 433MHz ~ 490MHz frequency range, as this kind of chips such as RF4432 adopt the communication mode of FSK and GFSK and the Anti-Jamming Technique based on frequency hopping, but current subject matter is that distance is shorter, only can realize the transceiving data of the visual range of about 1km, if there is stronger interference, the indexs such as the success ratio of transmitting-receiving and the distance of transmitting-receiving will reduce greatly.In this case, SX1278 chip can be selected, this chip has traditional FSK/GFSK communication pattern and spread spectrum mode simultaneously, and the communication distance had under spread spectrum mode and the transmitting-receiving bit error rate improve obviously compared with the performance of FSK communication pattern, particularly with the obvious advantage especially under the transmission situation of low rate.
By SX1278 chip application when RF communication module, its I/O pin (RFO_HF/RFI_LF) is directly received on two pins of RF1 and RF2 of HF switch chip PE4259 by the coupling circuit of inductance and electric capacity.And adopting this circuit structure to realize the input and output to signal, the high-performance difference that the performance showed and chip itself have is very large.Main cause is that the RF signal of SX1278 exports is that its inside is integrated with PA amplifying circuit, but input signal integrated be adjustable front end circuit, regulating parameter requires relatively strict, and more difficult control.What so just occurred when chip initiatively sends data is functional, and as the passive phenomenon of poor sensitivity waken up when just sending data, thus cause chip because of signal confiscate just without any subsequent reactions, signal input poor sensitivity, and this kind of circuit structure makes the signal input part of SX1278 chip no matter be all work on power at Received signal strength or wait-receiving mode process, the power consumption of chip is large, affects the serviceable life of parts.
Utility model content
For above-mentioned deficiency, technical problem to be solved in the utility model is to provide a kind of communication chip performance boost circuit, by after the stimulus part of SX1278 chip increases this circuit, the spread spectrum transmission performance of this chip, sensitivity and transmission range are improved, and effectively can reduce the loss of chip.
For solving the problems of the technologies described above, the utility model is achieved through the following technical solutions:
A kind of communication chip performance boost circuit, comprise SX1278 chip and a HF switch, a pre-amplification circuit is provided with between the signal input part and HF switch of SX1278 chip, the output pin RF1 of HF switch is electrically connected with described pre-amplification circuit, its input pin RF2 connects with SX1278 chip electrical after peripheral circuit, the reception pin RFC of HF switch is connected with signal antenna after an electric capacity C27, and HF switch is a control end VH wherein
2with the connection of pre-amplification circuit.
Described pre-amplification circuit can comprise two emitter radio-frequency (RF) transistors and the power switch in order to control two emitter radio-frequency (RF) transistors, the base stage B of described pair of emitter radio-frequency (RF) transistors is connected with the output pin RF1 of HF switch after electric capacity C5, two emitter (E1 of two emitter radio-frequency (RF) transistors, E2) ground connection, the collector C of two emitter radio-frequency (RF) transistors is divided into two branch roads, wherein a branch road is connected with the input pin RFI_LF of SX1278 chip successively after resistance R2 and electric capacity C4, its another branch road is connected with the output terminal of power switch after resistance R8, the input end of power switch is controlled by HF switch.
In such scheme, the BC847PN pair transistor integrated circuit that described power switch forms primarily of the first triode and the second triode, the base stage B1 of its first triode is connected to the low frequency control end VH of HF switch after resistance R3
2on, emitter E 1 ground connection of the first triode, is parallel on the base stage B2 of the second triode after the collector C1 of the first triode is connected with resistance R6; The emitter E 2 of the second triode is divided into two branch roads, wherein a branch road and power supply V
dDconnect, its another branch road is in parallel with the base stage B2 of the second triode after biasing resistor R7, the collector C2 of the second triode is connected with the collector C of pair emitter radio-frequency (RF) transistors.
In order to the signal of upper frequency is filtered, the collector C2 of the second triode is connected with shunt capacitance C25 and C26, C25 and C26 is parallel with one another, wherein one end of C25 and C26 be all connected on the collector C2 of the second triode, the equal ground connection of the other end of C25 and C26.
In such scheme, between the base stage B1 and resistance R3 of the first triode, be connected with an overload protection resistance R5.
In such scheme, at the low frequency control end VH of HF switch
2bypass capacitor C21 can be connected with.
Such scheme, in order to increase the sensitivity of small signal process, can be connected with a biasing resistor R9 between the base stage B and collector C of two emitter radio-frequency (RF) transistors.
For improving the stability of pre-amplification circuit, electric capacity C11 and inductance L 6 can be parallel with at the two ends of resistance R8.
In such scheme, the model of described HF switch is UPG2030.
The model of described pair of emitter radio-frequency (RF) transistors is 2SC5508.
The beneficial effects of the utility model are:
1, the utility model is in existing traditional application circuit using SX1278 chip as wireless gas meter RF chip, by increasing at the stimulus part of circuit and improving one with the pre-amplification circuit of power switch, make the input signal sensitivity of chip be increased to-115dB from the-110dB of former index like this, effectively improve the sensitivity of chip receives signals, spread spectrum transmission performance and transmission range; Effectively can reduce the loss of chip.
2, set BC847PN integrated circuit is as the power switch of pre-amplification circuit, and be subject to the control of HF switch, make SX1278 only just allow work when needs receive like this, the power consumption of minimizing SX1278 chip, improves the serviceable life of chip effectively.
Accompanying drawing explanation
Fig. 1 is this communication chip performance boost circuit diagram.
Embodiment
Below in conjunction with specific embodiments and the drawings, the utility model is further explained illustrates, but not in order to limit the utility model.
As shown in Figure 1, be this communication chip performance boost circuit diagram, it is to the improvement circuit that the input signal part of SX1278 is made on the basis of the traditional circuit shown in background technology content.
A kind of communication chip performance boost circuit, comprise SX1278 chip and a HF switch, between the signal input part and HF switch of SX1278 chip, be provided with a pre-amplification circuit, in the present embodiment, the model of described HF switch is UPG2030.The output pin RF1 of HF switch is electrically connected with described pre-amplification circuit, its input pin RF2 connects with SX1278 chip electrical after peripheral circuit, the reception pin RFC of HF switch is connected with signal antenna after an electric capacity C27, resistance R1 and electric capacity C29 is also connected with between antenna and electric capacity C27, for improving the performance of acknowledge(ment) signal, between electric capacity C29 and electric capacity C27, being provided with shunt capacitance C28 and being parallel with inductance L 8 at the two ends of electric capacity C28.HF switch is a control end VH wherein
2with the connection of pre-amplification circuit, its other control end VH
1be divided into two branch roads: one branch road is ground connection after electric capacity C20, its another branch road after resistance R4 with the power supply V of SX1278 chip
cCconnect.
Described pre-amplification circuit comprises two emitter radio-frequency (RF) transistors and the power switch in order to control two emitter radio-frequency (RF) transistors, and the concrete model of described pair of emitter radio-frequency (RF) transistors is 2SC5508.The base stage B of described pair of emitter radio-frequency (RF) transistors is connected with the output pin RF1 of HF switch after electric capacity C5, two emitter (E1 of two emitter radio-frequency (RF) transistors, E2) ground connection, the collector C of two emitter radio-frequency (RF) transistors is divided into two branch roads, wherein a branch road is connected with the input pin RFI_LF of SX1278 chip successively after resistance R2 and electric capacity C4, its another branch road is connected with the output terminal of power switch after resistance R8, electric capacity C11 and inductance L 6 is parallel with at the two ends of resistance R8, and a biasing resistor R9 is connected with between the base stage B and collector C of two emitter radio-frequency (RF) transistors.
In such scheme, the BC847PN pair transistor integrated circuit that described power switch forms primarily of the first triode and the second triode, emitter E 1 ground connection of its first triode, is parallel on the base stage B2 of the second triode after the collector C1 of the first triode is connected with resistance R6; The emitter E 2 of the second triode is divided into two branch roads, wherein a branch road and power supply V
dDconnect, its another branch road is in parallel with the base stage B2 of the second triode after biasing resistor R7, described power supply V
dDbe specially the voltage of 3.3V.The collector C2 of the second triode is connected, as the signal of power switch with the collector C of two emitter radio-frequency (RF) transistors.The collector C2 of the second triode is connected with shunt capacitance C25 and C26, C25 and C26 are parallel with one another, wherein one end of C25 and C26 be all connected on the collector C2 of the second triode, the equal ground connection of the other end of C25 and C26.
The input end of described power switch is controlled by HF switch, and the base stage B1 being specially the first triode is connected to the low frequency control end VH of HF switch after resistance R3
2on, between the base stage B1 and resistance R3 of the first triode, be connected with an overload protection resistance R5.At the low frequency control end VH of HF switch
2be connected with bypass capacitor C21.
Principle of work of the present utility model is:
The amplification of chip input signal: the base stage B that the radiofrequency signal inputted from the pin RF2 of HF switch UPG2030 is coupled into 2SC5508 by C5 amplifies process, in order to increase the sensitivity of small signal process, add biasing resistor R9 between base stage B and collector C, this ensures that there the amplification of small-signal.The signal be exaggerated by enlargement factor resistance R8, then enters the process of SX1278 chip RFI_LF pin after C4 coupling.
Reduce power consumption effect: the BC847PN integrated circuit added is made up of two triodes, its course of work: chip is when needs receive low-frequency data time, hand-held set sends a control signal, this signal is while being switched to Signal reception state by HF switch UPG2030, the base stage B1 of the first triode also in control BC847PN, the base stage B2 of the second triode is control by this triode, while signal opens the first triode, the first triode is made to control the emitter E 2 of the second triode and the collector C2 conducting of the second triode, the 3.3v voltage be now carried in the emitter E 2 of the second triode has just been added on 2SC5508, 2SC5508 is worked on power, and when chip does not need to receive, 2SC5508 does not have operating voltage, not conducting, then SX1278 chip does not work, and effectively reduces power consumption.
Claims (10)
1. a communication chip performance boost circuit, comprise SX1278 chip and a HF switch, it is characterized in that: between the signal input part and HF switch of SX1278 chip, be provided with a pre-amplification circuit, the output pin RF1 of HF switch is electrically connected with described pre-amplification circuit, its input pin RF2 connects with SX1278 chip electrical after peripheral circuit, the reception pin RFC of HF switch is connected with signal antenna after an electric capacity C27, and HF switch is a control end VH wherein
2with the connection of pre-amplification circuit.
2. communication chip performance boost circuit according to claim 1, it is characterized in that: described pre-amplification circuit comprises two emitter radio-frequency (RF) transistors and the power switch in order to control two emitter radio-frequency (RF) transistors, the base stage B of described pair of emitter radio-frequency (RF) transistors is connected with the output pin RF1 of HF switch after electric capacity C5, two emitter (E1 of two emitter radio-frequency (RF) transistors, E2) ground connection, the collector C of two emitter radio-frequency (RF) transistors is divided into two branch roads, wherein a branch road is connected with the input pin RFI_LF of SX1278 chip successively after resistance R2 and electric capacity C4, its another branch road is connected with the output terminal of power switch after resistance R8, the input end of power switch is controlled by HF switch.
3. communication chip performance boost circuit according to claim 2, it is characterized in that: the BC847PN pair transistor integrated circuit that described power switch forms primarily of the first triode and the second triode, the base stage B1 of its first triode is connected to the low frequency control end VH of HF switch after resistance R3
2on, emitter E 1 ground connection of the first triode, is parallel on the base stage B2 of the second triode after the collector C1 of the first triode is connected with resistance R6; The emitter E 2 of the second triode is divided into two branch roads, wherein a branch road and power supply V
dDconnect, its another branch road is in parallel with the base stage B2 of the second triode after biasing resistor R7, the collector C2 of the second triode is connected with the collector C of pair emitter radio-frequency (RF) transistors.
4. communication chip performance boost circuit according to claim 3, it is characterized in that: on the collector C2 of the second triode, be connected with shunt capacitance C25 and C26, C25 and C26 is parallel with one another, wherein one end of C25 and C26 be all connected on the collector C2 of the second triode, the equal ground connection of the other end of C25 and C26.
5. communication chip performance boost circuit according to claim 3, is characterized in that: between the base stage B1 and resistance R3 of the first triode, be connected with an overload protection resistance R5.
6. communication chip performance boost circuit according to claim 3, is characterized in that: at the low frequency control end VH of HF switch
2be connected with bypass capacitor C21.
7. communication chip performance boost circuit according to claim 2, is characterized in that: between the base stage B and collector C of two emitter radio-frequency (RF) transistors, be connected with a biasing resistor R9.
8. communication chip performance boost circuit according to claim 2, is characterized in that: be parallel with electric capacity C11 and inductance L 6 at the two ends of resistance R8.
9. communication chip performance boost circuit according to claim 1, is characterized in that: the model of described HF switch is UPG2030.
10. communication chip performance boost circuit according to claim 2, is characterized in that: the model of described pair of emitter radio-frequency (RF) transistors is 2SC5508.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520549609.4U CN204990663U (en) | 2015-07-28 | 2015-07-28 | Communication chip performance raising circuitry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520549609.4U CN204990663U (en) | 2015-07-28 | 2015-07-28 | Communication chip performance raising circuitry |
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| Publication Number | Publication Date |
|---|---|
| CN204990663U true CN204990663U (en) | 2016-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520549609.4U Expired - Fee Related CN204990663U (en) | 2015-07-28 | 2015-07-28 | Communication chip performance raising circuitry |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023418A (en) * | 2015-07-28 | 2015-11-04 | 桂林市利通电子科技有限责任公司 | Performance improving circuit for communication chip |
-
2015
- 2015-07-28 CN CN201520549609.4U patent/CN204990663U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023418A (en) * | 2015-07-28 | 2015-11-04 | 桂林市利通电子科技有限责任公司 | Performance improving circuit for communication chip |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160120 Termination date: 20190728 |
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| CF01 | Termination of patent right due to non-payment of annual fee |