CN204989899U - Be applied to on -off system of high voltage direct current occasion - Google Patents
Be applied to on -off system of high voltage direct current occasion Download PDFInfo
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- CN204989899U CN204989899U CN201520775080.8U CN201520775080U CN204989899U CN 204989899 U CN204989899 U CN 204989899U CN 201520775080 U CN201520775080 U CN 201520775080U CN 204989899 U CN204989899 U CN 204989899U
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Abstract
The utility model provides a be applied to on -off system of high voltage direct current occasion, includes high voltage direct current input positive pole and negative pole, microcontroller, is used for switch module, direct current total output positive pole and the negative pole of break -make high voltage direct current input positive pole and/or negative pole, wherein, the high voltage direct current input is anodal continuous through switch module and direct current total output, and high voltage direct current input negative pole links to each other with direct current total output negative pole through the switch module, the switch module still links to each other with microcontroller, wherein, the switch module includes two at least relays and the semiconductor device S2 of accuse type entirely. The utility model discloses can realize the function of independent anodal break -make, independent single negative pole break -make or the positive equal break -make of negative pole, not only can satisfy the requirement that suits of high -pressure heavy current occasion, also can satisfy the requirement that suits of low pressure heavy current application and so on occasion. The utility model discloses satisfy the direct current and use the requirement that suits under the scene, have the characteristics that low cost, high reliability and range of application are wide, can satisfy the requirement that high voltage direct current suits.
Description
Technical field
The utility model belongs to field of power electronics, relates to a kind of on-off system being applied to high voltage direct current occasion.
Background technology
Under high voltage direct current application scenario, adopt switchgear to carry out direct break-make to DC circuit, can cause switch contact arcing, arcing causes high temperature and ablation, can reduce the contact life-span.Common relay, normal circuit breaker, owing to not having arc-control device, cannot meet the requirement of high voltage direct current break-make.
At present, in the application of high voltage direct current break-make, the method that main flow adopts is: DC circuit breaker, the DC relay of band arc-suppression function, can meet practical application.But there is structure installment complexity, conveyance capacity is little, price is higher shortcoming.
In this context, be necessary to propose a kind of on-off system being applied to high voltage direct current occasion.
Utility model content
For overcoming the problems of the prior art, the purpose of this utility model is to provide a kind of direct current on-off system, and this device has that cost is low, the advantage of applied range, can solve the break-make problem of high-voltage great-current.
For achieving the above object, the utility model adopts following technical scheme:
Be applied to an on-off system for high voltage direct current occasion, comprise high voltage direct current input positive pole and negative pole, microcontroller, the switch module inputting positive pole and/or negative pole for break-make high voltage direct current, the total output cathode of direct current and negative pole; Wherein, high voltage direct current input positive pole is connected through the total output cathode of switch module and direct current, and high voltage direct current input negative pole is connected through the total output negative pole of switch module and direct current; Switch module is also connected with microcontroller; Wherein, switch module comprises at least two relays and a full-control type semiconductor devices S2.
When switch module is used for break-make high voltage direct current input positive pole and negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4; First relay S1 one end inputs positive pole with high voltage direct current and is connected, and the other end is connected with second relay S3 one end, and the second relay S3 other end is connected with the total output cathode of direct current; Full-control type semiconductor devices S2 is in parallel with the first relay S1, and full-control type semiconductor devices S2 one end and high voltage direct current input positive pole is connected, and the other end is connected with second relay S3 one end; The total output negative pole of direct current inputs negative pole through the 3rd relay S4 with high voltage direct current and is connected; First relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4 are by microprocessor controls.
When switch module is used for break-make high voltage direct current input direct-flow positive pole and negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4; First relay S1 one end inputs positive pole with high voltage direct current and is connected, the other end is connected with the total output cathode of direct current, the total output negative pole of direct current is connected with one end of the second relay S3, the other end of the second relay S3 is connected with one end of full-control type semiconductor devices S2 with the first relay S1 respectively, and the first relay S1 inputs negative pole with the other end of full-control type semiconductor devices S2 with high voltage direct current and is connected; First relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4 are by microprocessor controls.
When switch module is used for break-make high voltage direct current input positive pole, switch module comprises the first relay S1, full-control type semiconductor devices S2 and the second relay S3; One end of first relay S1, full-control type semiconductor devices S2 inputs positive pole with high voltage direct current respectively and is connected, the other end of the first relay S1, full-control type semiconductor devices S2 is connected with second relay S3 one end, the second relay S3 other end is connected with the total output cathode of direct current, and the total output negative pole of direct current and high voltage direct current input negative pole and be connected; First relay S1, full-control type semiconductor devices S2 and the second relay S3 are by microprocessor controls.
When switch module is used for break-make high voltage direct current input negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2 and the second relay S3; High voltage direct current input positive pole is connected with the total output cathode of direct current, the total output negative pole of direct current is connected with second relay S3 one end, the second relay S3 other end is connected with the first relay S1, full-control type semiconductor devices S2 one end respectively, and the first relay S1, the full-control type semiconductor devices S2 other end input negative pole with high voltage direct current and be connected; First relay S1, full-control type semiconductor devices S2 and the second relay S3 are by microprocessor controls.
Described full-control type semiconductor devices S2 is IGBT, MOSFET or IGCT.
Compared with prior art, the beneficial effects of the utility model are: the utility model is by arranging high voltage direct current input positive pole and negative pole, microcontroller, the positive pole always exported for break-make high voltage direct current input positive pole and/or the switch module of negative pole, direct current and negative pole; By the sequential of microprocessor controls switch module, under the condition of shearing device not using band arc-suppression function, the break-make of high-voltage great-current DC loop can be realized, the moment not arcing of device break-make, have that cost is low, reliability is high and realize physical isolation, thus realize safety cut-off ensureing and suit device, high voltage direct current inputs, direct current always exports safety, produce low-cost advantage in batches more obvious.In addition, this device can realize the function of independent positive pole break-make, independent single negative pole break-make or the equal break-make of both positive and negative polarity, and what not only can meet high-voltage great-current occasion suits requirement, and what also can meet low-voltage, high-current application etc. occasion suits requirement.The utility model meets and suits requirement under DC application scene, has the feature of low cost, high reliability and applied range, can meet the requirement that high voltage direct current suits.
Accompanying drawing explanation
Fig. 1 is composition schematic diagram of the present utility model.
Fig. 2 is Control timing sequence figure of the present utility model.
Fig. 3 is derivative circuit.Structural representation when Fig. 3 (a) is off positive pole; Structural representation when Fig. 3 (b) is off negative pole, when Fig. 3 (c) is off positive pole and negative pole, another kind of annexation schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail.
As shown in Figure 1, the utility model comprises high voltage direct current input positive pole and negative pole, microcontroller, the switch module inputting positive pole and/or negative pole for break-make high voltage direct current, the total output cathode of direct current and negative pole; Wherein, wherein, high voltage direct current input positive pole is connected through the total output cathode of switch module and direct current, and high voltage direct current input negative pole is connected through the total output negative pole of switch module and direct current; Switch module is also connected with microcontroller; Wherein, switch module comprises at least two relays and a full-control type semiconductor devices S2.
Control each switch relay by microcontroller by driving circuit, full-control type semiconductor devices is opened and closure state, realize direct current break-make.
See Fig. 1, when switch module is used for break-make high voltage direct current input positive pole and negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4; First relay S1 one end inputs positive pole with high voltage direct current and is connected, and the other end is connected with second relay S3 one end, and the second relay S3 other end is connected with the total output cathode of direct current; Full-control type semiconductor devices S2 is in parallel with the first relay S1, and full-control type semiconductor devices S2 one end and high voltage direct current input positive pole is connected, and the other end is connected with second relay S3 one end; The total output negative pole of direct current inputs negative pole through the 3rd relay S4 with high voltage direct current and is connected; First relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4 are by its break-make of microprocessor controls.
Full-control type semiconductor devices S2 is IGBT or MOSFET, under more high voltage, more big current, use IGCT.
When opening high voltage direct current input positive pole and negative pole for switch module for break-make below, the implementation of this programme is described:
When high voltage direct current input and direct current always export need disconnection time, the first relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4 control signal all set low level;
When high voltage direct current input needs always export conducting with direct current and disconnect, as shown in Figure 2, sequential [T0 ~ T2 represents direct current on-off system turn on process, and T3 ~ T5 represents that direct current on-off system disconnects process].
1) the T0 ~ T1: the second relay S3, the 3rd relay S4 control signal set high level, second relay S3, the 3rd relay S4 are closed, high voltage direct current input negative pole is connected with the total output negative pole of direct current, now the second relay S3, the 3rd relay S4 do not bear high pressure, electric current, can not strike sparks or arcing;
2) the T1 ~ T2: the second relay S3, the 3rd relay S4 control signal are maintained high level, full-control type semiconductor devices S2 control signal sets high level, high voltage direct current input positive pole is connected with the total output cathode of direct current, and now full-control type semiconductor devices S2 (IGBT) bears high pressure, electric current.Second relay S3, the 3rd relay S4 do not bear high pressure, electric current, can not strike sparks or arcing;
3) the T2 ~ T3: the second relay S3, the 3rd relay S4 control signal are maintained high level, and full-control type semiconductor devices S2 control signal maintains high level.First relay S1 control signal is maintained high level, and the first relay S1 does not bear high pressure, electric current, can not strike sparks or arcing;
4) the T3 ~ T4: the second relay S3, the 3rd relay S4 control signal are maintained high level, and full-control type semiconductor devices S2 control signal maintains high level.First relay S1 disconnects, and the first relay S1 does not bear high pressure, electric current, can not strike sparks or arcing;
5) the T4 ~ T5: the second relay S3, the 3rd relay S4 control signal are maintained high level, and the first relay S1 maintains low level, and full-control type semiconductor devices S2 control signal maintains low level.
6) T5 ~: the first relay S1, full-control type semiconductor devices S2, the second relay S3, the 3rd relay S4 all disconnect, and the second relay S3, the 3rd relay S4 do not bear high pressure, big current, can not strike sparks or arcing.
Below only introduce a kind of implementation that this direct current suits device, in direct current on-off system, the interconnecting relation of each switching device is not limited thereto, and also has multiple derivative circuit.
See Fig. 3 (c), when switch module is used for break-make high voltage direct current input direct-flow positive pole and negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4; First relay S1 one end inputs positive pole with high voltage direct current and is connected, the other end is connected with the total output cathode of direct current, the total output negative pole of direct current is connected with one end of the second relay S3, the other end of the second relay S3 is connected with one end of full-control type semiconductor devices S2 with the first relay S1 respectively, and the first relay S1 inputs negative pole with the other end of full-control type semiconductor devices S2 with high voltage direct current and is connected; First relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4 are by microprocessor controls.
See Fig. 3 (a), when switch module is used for break-make high voltage direct current input positive pole, switch module comprises the first relay S1, full-control type semiconductor devices S2 and the second relay S3; One end of first relay S1, full-control type semiconductor devices S2 inputs positive pole with high voltage direct current respectively and is connected, the other end of the first relay S1, full-control type semiconductor devices S2 is connected with second relay S3 one end, the second relay S3 other end is connected with the total output cathode of direct current, and the total output negative pole of direct current and high voltage direct current input negative pole and be connected; First relay S1, full-control type semiconductor devices S2 and the second relay S3 are by microprocessor controls.
See Fig. 3 (b), when switch module is used for break-make high voltage direct current input negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2 and the second relay S3; High voltage direct current input positive pole is connected with the total output cathode of direct current, the total output negative pole of direct current is connected with second relay S3 one end, the second relay S3 other end is connected with the first relay S1, full-control type semiconductor devices S2 one end respectively, and the first relay S1, the full-control type semiconductor devices S2 other end input negative pole with high voltage direct current and be connected; First relay S1, full-control type semiconductor devices S2 and the second relay S3 are by microprocessor controls.
What this device of the utility model not only can meet high-voltage great-current occasion suits requirement, and what also can meet low-voltage, high-current application etc. occasion suits requirement.Can realize the break-make of high-voltage great-current DC circuit, the not arcing of device break-make, have that cost is low, reliability is high and realize physical isolation, batch production low-cost advantage is more obvious.
The on-off system being applied to high voltage direct current occasion of the present utility model, can realize the break-make of high-voltage great-current, high voltage-small current and low-voltage, high-current.Specifically can realize independent high voltage direct current input positive pole suit, separately high voltage direct current negative pole suit or the positive and negative function all suited.Described on-off system is positioned at high-voltage power supply outgoing side, can realize the physical isolation with power-supply system.
Claims (6)
1. be applied to an on-off system for high voltage direct current occasion, it is characterized in that, comprise high voltage direct current input positive pole and negative pole, microcontroller, the switch module inputting positive pole and/or negative pole for break-make high voltage direct current, the total output cathode of direct current and negative pole; Wherein, high voltage direct current input positive pole is connected through the total output cathode of switch module and direct current, and high voltage direct current input negative pole is connected through the total output negative pole of switch module and direct current; Switch module is also connected with microcontroller; Wherein, switch module comprises at least two relays and a full-control type semiconductor devices S2.
2. the on-off system being applied to high voltage direct current occasion according to claim 1, it is characterized in that, when switch module is used for break-make high voltage direct current input positive pole and negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4; First relay S1 one end inputs positive pole with high voltage direct current and is connected, and the other end is connected with second relay S3 one end, and the second relay S3 other end is connected with the total output cathode of direct current; Full-control type semiconductor devices S2 is in parallel with the first relay S1, and full-control type semiconductor devices S2 one end and high voltage direct current input positive pole is connected, and the other end is connected with second relay S3 one end; The total output negative pole of direct current inputs negative pole through the 3rd relay S4 with high voltage direct current and is connected; First relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4 are by microprocessor controls.
3. the on-off system being applied to high voltage direct current occasion according to claim 1, it is characterized in that, when switch module is used for break-make high voltage direct current input direct-flow positive pole and negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4; First relay S1 one end inputs positive pole with high voltage direct current and is connected, the other end is connected with the total output cathode of direct current, the total output negative pole of direct current is connected with one end of the second relay S3, the other end of the second relay S3 is connected with one end of full-control type semiconductor devices S2 with the first relay S1 respectively, and the first relay S1 inputs negative pole with the other end of full-control type semiconductor devices S2 with high voltage direct current and is connected; First relay S1, full-control type semiconductor devices S2, the second relay S3 and the 3rd relay S4 are by microprocessor controls.
4. the on-off system being applied to high voltage direct current occasion according to claim 1, is characterized in that, when switch module is used for break-make high voltage direct current input positive pole, switch module comprises the first relay S1, full-control type semiconductor devices S2 and the second relay S3; One end of first relay S1, full-control type semiconductor devices S2 inputs positive pole with high voltage direct current respectively and is connected, the other end of the first relay S1, full-control type semiconductor devices S2 is connected with second relay S3 one end, the second relay S3 other end is connected with the total output cathode of direct current, and the total output negative pole of direct current and high voltage direct current input negative pole and be connected; First relay S1, full-control type semiconductor devices S2 and the second relay S3 are by microprocessor controls.
5. the on-off system being applied to high voltage direct current occasion according to claim 1, is characterized in that, when switch module is used for break-make high voltage direct current input negative pole, switch module comprises the first relay S1, full-control type semiconductor devices S2 and the second relay S3; High voltage direct current input positive pole is connected with the total output cathode of direct current, the total output negative pole of direct current is connected with second relay S3 one end, the second relay S3 other end is connected with the first relay S1, full-control type semiconductor devices S2 one end respectively, and the first relay S1, the full-control type semiconductor devices S2 other end input negative pole with high voltage direct current and be connected; First relay S1, full-control type semiconductor devices S2 and the second relay S3 are by microprocessor controls.
6. according to the on-off system being applied to high voltage direct current occasion in claim 1-5 described in any one, it is characterized in that, described full-control type semiconductor devices S2 is IGBT, MOSFET or IGCT.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106953516A (en) * | 2017-04-01 | 2017-07-14 | 西安特锐德智能充电科技有限公司 | A kind of modularization bidirectional, dc power distributing unit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106953516A (en) * | 2017-04-01 | 2017-07-14 | 西安特锐德智能充电科技有限公司 | A kind of modularization bidirectional, dc power distributing unit |
| CN106953516B (en) * | 2017-04-01 | 2024-04-19 | 西安特来电智能充电科技有限公司 | Modularized bidirectional direct current power distribution unit |
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| CP01 | Change in the name or title of a patent holder |
Address after: No. e206-2, R & D building, building e, HUanpu science and Technology Industrial Park, 211 tianguba Road, high tech Zone, Xi'an City, Shaanxi Province, 710077 Patentee after: Xi'an Telai Intelligent Charging Technology Co.,Ltd. Address before: No. e206-2, R & D building, building e, HUanpu science and Technology Industrial Park, 211 tianguba Road, high tech Zone, Xi'an City, Shaanxi Province, 710077 Patentee before: XI'AN TGOOD INTELLIGENT CHARGING TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |