CN204967436U - Microwave energy dash receiver - Google Patents
Microwave energy dash receiver Download PDFInfo
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- CN204967436U CN204967436U CN201520699121.XU CN201520699121U CN204967436U CN 204967436 U CN204967436 U CN 204967436U CN 201520699121 U CN201520699121 U CN 201520699121U CN 204967436 U CN204967436 U CN 204967436U
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- microwave energy
- dash receiver
- wavelength resonance
- resonance structure
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Abstract
The utility model provides a microwave energy dash receiver, inferior wavelength resonance constitutional unit including square configuration, inferior wavelength resonance constitutional unit includes that inferior wavelength resonance structure reaches the high frequency rectifier circuit rather than linking to each other, inferior wavelength resonance structure from the top down includes top layer metal level, insulation support dielectric layer and ground connection metal level. The top layer metal level is square configuration, and the intermediate position on each limit is provided with the rectangular shape breach to the center extension of top layer metal level, totally four rectangular shape breachs, the width of four rectangular shape breachs equals, two wherein relative rectangular shape breach length equal to constitute a set of rectangular shape breach, in two sets of rectangular shape breachs, one of them group leader's bar breach length is greater than a set of rectangular shape breach length in addition. Realized not only that space environment and the perfect of rectifier circuit match, compact structure between a plurality of units moreover can equivalently be the perfect energy dash receiver of homogeneous medium for it exceedes 90% wholly to receive efficiency.
Description
Technical field
The utility model relates to wireless energy and receives field, particularly relates to a kind of circular polarization microwave energy dash receiver utilizing time wavelength resonant element to form.
Background technology
Microwave energy transfer technology refers to free space to be energy is directly sent to receiving terminal by communication media one non-contacting mode microwave energy transfer technology from transmitting terminal, due to microwave energy transfer technology in the efficiency of transmission of S-band and C-band generally more than 90%, and the intensity of microwave beam and direction are easier to control, microwave energy transfer technology is made to receive increasing concern on international, domestic, especially obtained in recent years sufficient development, all had broad application prospects in radar system and Wireless microwave Energy Transfer.
The theory of hertz with radio propagation energy since 17th century end tesla experimental verification, modern age, microwave energy transfer technology obtained high speed development.The 7O age in last century, for the understanding of energy crisis, impels the economic giant such as the U.S., Japan to start solar energy research plan, greatly advances the progress of Wireless microwave Energy Transfer and transformation technology.And along with the fast development of microwave communication, about the 8O age in last century, international research group proposes the imagination of high-altitude long-term operation communication relay platform, this is the blank of present near space vehicle, and microwave energy transfer technology is the major way that this platform obtains energy.The nineties, microwave energy transfer technology is paid close attention in low-power, closely application, is referred to as " virtual battery " of micro-system, not only can reduces the volume and weight of energy user, and can energy supply all the life.At home, also there is the key technology of multiple research group to microwave energy transfer system to do comparison system and deep exploration, first achieve the microwave power transmission to pipe robot.
Microwave energy transfer system relates to multiple research fields of microwave, comprise microwave power generator, space power synthesis, wave beam control, reception antenna, microwave rectifier circuit, RECTIFYING ANTENNA group battle array technology etc., and in order to improve the combination of overall transformation efficiency various piece.Each link plays vital effect to microwave energy transfer efficiency.Especially reception antenna efficiency and microwave rectification efficiency (i.e. the efficiency of RECTIFYING ANTENNA) extreme influence the efficiency of microwave energy transfer system, and traditional RECTIFYING ANTENNA is not owing to mating or the energy conversion efficiency not enough fast development that govern microwave energy transfer system such as low.
Therefore, RECTIFYING ANTENNA is the key technology of current microwave energy transfer system, and he forms primarily of two parts, Part I microwave antenna, and Part II is diode rectifier circuit.The good RECTIFYING ANTENNA in the current world is double-fed round iron plate antenna, and under high power input condition, changing effect reaches 81%.Also some project team have studied rectenna array in addition, attempt to improve received energy, but the receiving efficiency of individual unit antenna of comparing, total energy conversion efficiency is lower, and owing to considering size, bulk factor, RECTIFYING ANTENNA battle array requires to design compacter, but due to the coupling between ordinary antennas unit, to make between array element, at least at a distance of half-wavelength, to greatly reduce capacity usage ratio.
Utility model content
The technical problems to be solved in the utility model is to provide the higher circular polarization microwave energy dash receiver of a kind of microwave energy transfer efficiency.
The technical solution adopted in the utility model is as follows: a kind of microwave energy dash receiver, is characterized in that, comprises the secondary wavelength resonance structure unit of square structure; Described time wavelength resonance structure unit comprises, secondary wavelength resonance structure and coupled high-frequency rectification circuit; Described high-frequency rectification circuit comprises high-frequency rectification chip and auxiliary circuit thereof; Described time wavelength resonance structure comprises from top to bottom,
Top layer metallic layer is square structure, and every centre position is provided with the strip breach extended to top layer metallic layer center, totally four strip breach; The width of described four strip breach is equal; Two wherein relative strip notch length equal formation one group leader bar v notch vs, totally two group leader's bar v notch vs; In two group leader's bar v notch vs, wherein group leader's bar shaped notch length is greater than other group leader's bar shaped notch length;
Insulating supporting dielectric layer, between top layer metallic layer and ground metal layer, plays insulating supporting effect;
Ground metal layer is ground plane;
Described insulating supporting dielectric layer is provided with positive pole input through hole, this positive pole input through hole, upwards be connected on a diagonal of top layer metallic layer, but not at the center of top layer metallic layer, be passed down through ground metal layer, but directly do not contact with ground metal layer, be connected to the input positive pole of high-frequency rectification chip, the positive pole as high-frequency rectification circuit inputs;
Described ground metal layer is connected to the input negative pole of high-frequency rectification diode, and the negative pole as high-frequency rectification circuit inputs.
Two group leader's bar v notch vs, can not be generally long, as concrete width and the concrete length often organized, specifically set by be suitable for wavelength and the matching effect that will reach.Described positive pole input through hole vertical direction is upwards connected on a diagonal of top layer metallic layer, but can not at the center of top layer metallic layer, as on any bar diagonal, by being still that right circular polarization determines for left circular polarization, and in concrete which position cornerwise, then determine according to matching effect.
Utilize the electromagnetic resonance effect that electromagnetic wave occurs between top layer metallic layer and middle ground metal level, two polarization components making the electromagnetic phase place of incident circular polarization just differ from 90 degree are coupled into the different strip breach of two corresponding length.By the position of simulation optimization through hole, the perfection of incident circular polarization electromagnetic wave can be coupled into through hole, make equivalent electric circuit during its work realize the perfect matching of high-frequency rectification circuit and vacuum environment, thus the perfection realizing wireless energy receives.By high-frequency rectification circuit, received microwave energy rectification is changed into DC energy to export.
Described ground layer is provided with a circumferential notch (also can be the breach of square notch or other shapes) in the position of corresponding positive pole input through hole, a pad is provided with in circumferential notch, described positive pole input through hole is connected to the input positive pole of high-frequency rectification chip by this pad, and is unlikely to contact with ground metal layer.
Also comprise bottom insulating medium layer, described bottom insulating medium layer is provided with two through holes, it is corresponding that through hole and described positive pole input through hole, and another through hole is connected to ground metal layer; Be provided with two pads bottom described bottom insulating medium layer, each corresponding pad of described two through holes, is connected by the both positive and negative polarity of pad with high-frequency rectification diode.Such structure is convenient to multiple wavelength resonance structure unit can form large area high efficiency microwave energy dash receiver.
Comprise multiple wavelength resonance structure unit, composition large area high efficiency microwave energy dash receiver.A lot of time wavelength resonance structure unit periodic arrangement are formed dash receiver, the less radio-frequency AC signal of each self-absorption can be changed into direct voltage by rectification chip during work on each unit, the direct voltage series connection that multiple unit is exported, the DC power supply that each unit produces is in series, thus produce the DC power supply of required voltage, realize high efficiency microwave energy dash receiver.When efficient wireless energy dash receiver work, the circular polarization electromagnetic wave incided on time wavelength resonance structure can produce electric resonance and magnetic resonance under top layer square sheet metal layers and ground layer synergy.
The top layer metallic layer size of each wavelength resonance structure unit is less than construction unit size, and to make between the direct adjacent secondary wavelength resonance structure unit contacted, respective top layer metallic layer does not directly contact.
The size dimension of described wavelength resonance structure unit is less than 1/4 of operation wavelength, and because cell size is in time wave-length coverage, whole dash receiver can be equivalent to uniform dielectric microwave energy collecting board.
Described wavelength resonance structure unit, the structure length of side is 12mm, wherein,
Top layer metallic layer, the length of side is 10.2mm, and thickness is 0.035mm, and strip gap width is 0.3mm, and longer group leader's bar shaped notch length is 4mm, and the length of shorter group leader's bar v notch v is 2.4mm;
Insulating supporting dielectric layer, chosen material to be dielectric constant be 3.5 Rogers3035, thickness is 1.5mm;
Ground metal layer, thickness is 0.035mm;
Through hole, radius is 0.3mm.
This physical dimension arranges and is applicable to operating frequency is 5.8GHz, and the skin that namely works is about the secondary wavelength resonance structure unit into 50mm.According to simulation result display, at working band center, each construction unit reflection coefficient is only-45dB, almost ideal sorption enhanced, and due to the loss of material own minimum, therefore Conversion of Energy effect nearly 99%.Secondary wavelength resonance structure cell size (12mm), less than 1/4 of operation wavelength (50mm), makes this metal unit structure to be equivalent to homogeneous medium.The relative dielectric constant of its equivalence and relative permeability can be expressed as: ε (ω)=ε
1(ω)+i ε
2(ω) with μ (ω)=μ
1(ω)+i μ
2(ω), wherein ε
1(ω) be the real part of this EFFECTIVE MEDIUM relative dielectric constant, ε
2(ω) be the imaginary part (imaginary part larger expression medium wave absorbing efficiency is higher) of this EFFECTIVE MEDIUM relative dielectric constant.In like manner μ
1(ω) be the real part of this EFFECTIVE MEDIUM relative dielectric constant, μ
2(ω) be the imaginary part (imaginary part larger expression medium wave absorbing efficiency is higher) of this EFFECTIVE MEDIUM relative dielectric constant.Appropriate change opens the size of top layer metallic layer, the width of strip breach, can make the medium parameter of this medium in required operating frequency, obtain ε (ω)=ε
1(ω)+i ε
2(ω)=μ (ω)=μ
1(ω)+i μ
2(ω), namely the real part of relative dielectric constant is equal with relative permeability, so just achieves and mates completely with the impedance of air, forms perfect matching zero and reflects.And simultaneously due to the existence of High frequency filter chip, most AC signal can be absorbed, change into zero-frequency direct current signal, be i.e. the now imaginary part of this EFFECTIVE MEDIUM and ε
2(ω) and μ
2(ω) can be very large, show high microwave energy transformation efficiency.Each unit can form alone a DC power supply.
Described bottom insulating medium layer, thickness is 0.5mm;
Described pad thickness is 0.035mm.
Will a lot of unit periodic arrangement, laterally longitudinal cycle is 12mm, and each unit output is obtained both positive and negative polarity and once connect and can realize high-voltage direct-current power supply source, so just wireless communication signal energy is all changed into DC power supply.And the thickness of this material is only 2.105mm, be namely only equivalent to the thickness of 1/25th of operation wavelength (50mm), can be described as perfect wireless energy dash receiver.
Described top layer metallic layer and/or ground metal layer are metal copper sheet.
Described high-frequency rectification chip is high-frequency rectification diode.
Compared with prior art, the beneficial effects of the utility model are:
1, project organization is simple, and quality is light, and thickness is thin, only has the thickness of 1/25th of microwave wavelength can realize reception and the conversion of high efficiency wireless energy.
2, project organization size is little, lower than 1/4 of operation wavelength, can be considered as uniform dielectric, and received energy effective aperture is even, and achieves effective aperture maximization.
3, matching performance is fabulous, and through Case Simulation checking, the reflection coefficient in operating frequency is-45dB, and energy acceptance transformation efficiency is 99%.
4, structure is changeable, can require the different shape of design and size for different frequency acceptance band.Each shape high efficiency can both receive and transform.
The radio frequency energy transmission that 5, can be widely used in current various frequency range equips research and development application field with reception.
Not only achieve the perfect matching of space environment and rectification circuit, and compact conformation between multiple unit, the perfect energy acceptance plate of homogeneous medium can be equivalent to, make overall receiving efficiency more than 90%, greatly improve the efficiency of microwave energy transfer system, the application of wireless energy transfer is brought up to a new platform.
Accompanying drawing explanation
Fig. 1 is a utility model wherein embodiment time wavelength resonance structure unit vertical view.
Fig. 2 is a utility model wherein embodiment time wavelength resonance structure unit lowermost layer upward view.
Fig. 3 is a utility model wherein embodiment time wavelength resonance structure unit vertical direction profile.
Fig. 4 is the utility model wherein microwave energy dash receiver vertical view of forming of an embodiment multiple wavelength resonance structure unit.
Fig. 5 be embodiment illustrated in fig. 4 in, the microwave energy dash receiver insulating supporting dielectric layer schematic diagram that secondary wavelength resonance structure unit is formed.
Fig. 6 be embodiment illustrated in fig. 4 in, the microwave energy dash receiver lowermost layer upward view that secondary wavelength resonance structure unit is formed.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
Arbitrary feature disclosed in this specification (comprising any summary and accompanying drawing), unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object.That is, unless specifically stated otherwise, each feature is an example in a series of equivalence or similar characteristics.
Specific embodiment one
This specific embodiment is with arrangement works frequency for 5.8GHz, and namely operation wavelength is about the microwave energy dash receiver of 50mm is that example is described.
In this specific embodiment, form microwave energy dash receiver by single wavelength resonance structure unit.As depicted in figs. 1 and 2, described time wavelength resonance structure unit is square structure, comprises time wavelength resonance structure and coupled high-frequency rectification circuit; Described high-frequency rectification circuit comprises high-frequency rectification chip and auxiliary circuit thereof; Described time wavelength resonance structure comprises from top to bottom,
Top layer metallic layer 1 is square structure, and every centre position is provided with the strip breach 2 extended to top layer metallic layer center, totally four strip breach; The width of described four strip breach is equal; Two wherein relative strip notch length equal formation one group leader bar v notch vs, totally two group leader's bar v notch vs; In two group leader's bar v notch vs, wherein group leader's bar shaped notch length is greater than other group leader's bar shaped notch length;
Insulating supporting dielectric layer 8, between top layer metallic layer and ground metal layer, plays insulating supporting effect;
Ground metal layer 4 is ground plane;
Described insulating supporting dielectric layer is provided with positive pole input through hole 3, this positive pole input through hole, upwards be connected on a diagonal of top layer metallic layer, but not at the center of top layer metallic layer, be passed down through ground metal layer, but directly do not contact with ground metal layer, be connected to the input positive pole of high-frequency rectification chip, the positive pole as high-frequency rectification circuit inputs;
Described ground metal layer is connected to the input negative pole of high-frequency rectification diode, and the negative pole as high-frequency rectification circuit inputs.
In this specific embodiment, described wavelength resonance structure unit, the structure length of side is 12mm, wherein, the top layer metallic layer length of side is 10.2mm, and thickness is 0.035mm, and strip gap width is 0.3mm, longer group leader's bar shaped notch length is 4mm, and the length of shorter group leader's bar v notch v is 2.4mm; Insulating supporting dielectric layer chosen material to be dielectric constant be 3.5 Rogers3035, thickness is 1.5mm; Grounded metal layer thickness is 0.035mm; Through hole radius is 0.3mm.
Described ground layer is provided with a circumferential notch 5 (also can be the breach of square notch or other shapes) in the position of corresponding positive pole input through hole 3, a pad is provided with in circumferential notch, described positive pole input through hole 3 is connected to the input positive pole of high-frequency rectification chip 7 by this pad, and is unlikely to contact with ground metal layer.And the input negative pole of high-frequency rectification chip 7 is connected to ground metal layer pad 6.
In this specific embodiment, described top layer metallic layer and ground metal layer are metal copper sheet, and described high-frequency rectification chip is high-frequency rectification diode.
Specific embodiment two
As shown in Figure 3, similar with specific embodiment one, difference is, described time wavelength resonance structure unit also comprises bottom insulating medium layer 9, described bottom insulating medium layer is provided with two through holes, it is corresponding that through hole and described positive pole input through hole 3, and another through hole 10 is connected to ground metal layer; Be provided with two pads 11 bottom described bottom insulating medium layer, each corresponding pad of described two through holes, is connected by the both positive and negative polarity of pad with high-frequency rectification diode.Such structure is convenient to multiple wavelength resonance structure unit can form large area high efficiency microwave energy dash receiver.In this specific embodiment, described bottom dielectric layer thickness is 0.5mm; Described pad thickness is 0.035mm.
Specific embodiment three
As shown in Fig. 4 to 6, be with the difference of specific embodiment two, in this specific embodiment, microwave energy dash receiver is the secondary wavelength resonance structure unit composition described in multiple specific embodiment two, for each construction unit, the size of top layer metallic layer is less than total cell size.。A lot of time wavelength resonance structure unit periodic arrangement are formed dash receiver, the less radio-frequency AC signal of each self-absorption can be changed into direct voltage by rectification chip during work on each unit, the direct voltage series connection that multiple unit is exported, the DC power supply that each unit produces is in series, thus produce the DC power supply of required voltage, realize high efficiency microwave energy dash receiver.When efficient wireless energy dash receiver work, the circular polarization electromagnetic wave incided on time wavelength resonance structure can produce electric resonance and magnetic resonance under top layer square sheet metal layers and ground layer synergy.
Claims (10)
1. a microwave energy dash receiver, is characterized in that, comprises the secondary wavelength resonance structure unit of square structure; Described time wavelength resonance structure unit comprises, secondary wavelength resonance structure and coupled high-frequency rectification circuit; Described high-frequency rectification circuit comprises high-frequency rectification chip and auxiliary circuit thereof; Described time wavelength resonance structure comprises from top to bottom,
Top layer metallic layer is square structure, and every centre position is provided with the strip breach extended to top layer metallic layer center, totally four strip breach; The width of described four strip breach is equal; Two wherein relative strip notch length equal formation one group leader bar v notch vs, totally two group leader's bar v notch vs; In two group leader's bar v notch vs, wherein group leader's bar shaped notch length is greater than other group leader's bar shaped notch length;
Insulating supporting dielectric layer, between top layer metallic layer and ground metal layer, plays insulating supporting effect;
Ground metal layer is ground plane;
Described insulating supporting dielectric layer is provided with positive pole input through hole, this positive pole input through hole, upwards be connected on a diagonal of top layer metallic layer, but not at the center of top layer metallic layer, be passed down through ground metal layer, but directly do not contact with ground metal layer, be connected to the input positive pole of high-frequency rectification chip;
Described ground metal layer is connected to the input negative pole of high-frequency rectification chip.
2. microwave energy dash receiver according to claim 1, it is characterized in that, described ground plane metal is provided with a circumferential notch in the position of corresponding positive pole input through hole, be provided with a pad in circumferential notch, described positive pole input through hole is connected to the input positive pole of high-frequency rectification chip by this pad.
3. microwave energy dash receiver according to claim 1, it is characterized in that, also comprise bottom insulating medium layer, described bottom insulating medium layer is provided with two through holes, it is corresponding that through hole and described positive pole input through hole, and another through hole is connected to ground metal layer; Be provided with two pads bottom described bottom insulating medium layer, each corresponding pad of described two through holes, is connected with the input both positive and negative polarity of high-frequency rectification chip by pad.
4. microwave energy dash receiver according to claim 3, is characterized in that, comprises multiple wavelength resonance structure unit, composition large area high efficiency microwave energy dash receiver.
5. microwave energy dash receiver according to claim 4, it is characterized in that, the top layer metallic layer size of each wavelength resonance structure unit is less than construction unit size, and to make between the direct adjacent secondary wavelength resonance structure unit contacted, respective top layer metallic layer does not directly contact.
6. according to the microwave energy dash receiver one of claim 1 to 5 Suo Shu, it is characterized in that, the size dimension of described wavelength resonance structure unit is less than 1/4 of operation wavelength.
7. according to the microwave energy dash receiver one of claim 1 to 5 Suo Shu, it is characterized in that, described wavelength resonance structure unit, the structure length of side is 12mm, wherein,
Top layer metallic layer, the length of side is 10.2mm, and thickness is 0.035mm, and strip gap width is 0.3mm, and longer group leader's bar shaped notch length is 4mm, and the length of shorter group leader's bar v notch v is 2.4mm;
Insulating supporting dielectric layer, is chosen for the Rogers3035 that dielectric constant is 3.5, and thickness is 1.5mm;
Ground metal layer, thickness is 0.035mm;
Through hole, radius is 0.3mm.
8. according to the microwave energy dash receiver one of claim 3 to 5 Suo Shu, it is characterized in that, described bottom insulating medium layer, thickness is 0.5mm; Described pad thickness is 0.035mm.
9. according to the microwave energy dash receiver one of claim 1 to 5 Suo Shu, it is characterized in that, described top layer metallic layer and/or ground metal layer are metal copper sheet.
10. according to the microwave energy dash receiver one of claim 1 to 5 Suo Shu, it is characterized in that, described high-frequency rectification chip is high-frequency rectification diode.
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| CN201520699121.XU CN204967436U (en) | 2015-09-10 | 2015-09-10 | Microwave energy dash receiver |
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| CN201520699121.XU CN204967436U (en) | 2015-09-10 | 2015-09-10 | Microwave energy dash receiver |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105071555A (en) * | 2015-09-10 | 2015-11-18 | 浙江大学自贡创新中心 | Microwave energy receiving plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105071555A (en) * | 2015-09-10 | 2015-11-18 | 浙江大学自贡创新中心 | Microwave energy receiving plate |
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| GR01 | Patent grant | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160113 Termination date: 20190910 |